CN1193108C - 外延覆层金属带及其制造方法 - Google Patents
外延覆层金属带及其制造方法 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 38
- 239000002184 metal Substances 0.000 title claims abstract description 38
- 238000000576 coating method Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title abstract description 16
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 36
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 24
- 239000000956 alloy Substances 0.000 claims abstract description 24
- 229910052802 copper Inorganic materials 0.000 claims abstract description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 16
- 239000001301 oxygen Substances 0.000 claims abstract description 16
- 150000004767 nitrides Chemical class 0.000 claims abstract description 15
- 238000000137 annealing Methods 0.000 claims abstract description 13
- 229910052709 silver Inorganic materials 0.000 claims abstract description 12
- 239000000654 additive Substances 0.000 claims abstract description 9
- 230000000996 additive effect Effects 0.000 claims abstract description 9
- 239000007858 starting material Substances 0.000 claims abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052796 boron Inorganic materials 0.000 claims abstract description 5
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 5
- 238000001953 recrystallisation Methods 0.000 claims abstract description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 73
- 239000002245 particle Substances 0.000 claims description 37
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 12
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 5
- 238000003763 carbonization Methods 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims description 2
- 239000006185 dispersion Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 13
- 239000011248 coating agent Substances 0.000 abstract description 9
- 150000001247 metal acetylides Chemical class 0.000 abstract 3
- 239000002131 composite material Substances 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 12
- 229910000480 nickel oxide Inorganic materials 0.000 description 10
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 10
- 239000004411 aluminium Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000005096 rolling process Methods 0.000 description 8
- 238000006467 substitution reaction Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000007493 shaping process Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000003856 thermoforming Methods 0.000 description 3
- 238000005097 cold rolling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000004663 powder metallurgy Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229960001866 silicon dioxide Drugs 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- YCKOAAUKSGOOJH-UHFFFAOYSA-N copper silver Chemical compound [Cu].[Ag].[Ag] YCKOAAUKSGOOJH-UHFFFAOYSA-N 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- MOWMLACGTDMJRV-UHFFFAOYSA-N nickel tungsten Chemical compound [Ni].[W] MOWMLACGTDMJRV-UHFFFAOYSA-N 0.000 description 1
- 238000004881 precipitation hardening Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000008698 shear stress Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
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Abstract
本发明旨在实施中毫无问题地制造具有双轴线的晶粒取向层的外延覆层金属带,所述具有双轴线的晶粒取向层的外延覆层金属带有较高的拉延强度,很小的磁损耗和/或高的电导率。根据本发明所述金属带由镍、铜、银或合金作基础材料,其中,单层的金属带及多层金属带的至少其中之一层具有10毫微米至2微米厚的,含0.1至5%体积的碳化、硼化、氧化和/或氮化物提高强度的弥散颗粒,并且,其中在多层金属带的情况下,所述的层构成复合物,而其中至少一个层没有弥散颗粒且同时有双轴线的晶体结构。为了制造这样的金属带采用由镍、铜、银或者其合金作为基础材料的,并且含有2-5%原子量的可氧化、可氮化、可硼化和/或可碳化的元素的添加物的原始材料。由这样的原始材料利用金属成形技术制造一层或者多层的带,其中,为制造多层金属带至少其一层采用没有上述组成的基础材料。然后把所述带投入再结晶退火中构成立体结晶结构。最后把所述带在氧、氮、硼或碳分压高于氧化物、氮化物、硼化物和碳化物的均衡分压的条件下进行退火,所述合金中所含的添加物的氧化物、氮化物、硼化物和碳化物的均衡分压低于所述带合金的基本元素镍、铜和银的氧化物、氮化物、硼化物和碳化物的均衡分压。
Description
技术领域
本发明涉及一层或多层具有双轴线的晶粒取向层的外延覆层金属带,以及制造这种金属带的方法。这种带可以有利地用于由YBa2Cu3OX高温超导材料精制双轴线晶粒取向层。
背景技术
已经公知基于镍、铜、和银的金属带适于具有双轴线的晶粒取向的外延覆层(美国专利5739086;美国专利5964966;美国专利5968877)。这些金属以95%以上的形变度冷轧,接着进行再结晶退火处理,从而构成清晰的{001}<100>晶粒取向(立方晶体结构)。
现在特别对基于镍和银的基物开发进行了世界范围的奋力研究(J.E.et al.,Jap.J.Appl.Phys.37,1998;T.A.Gladstone et al.,Inst.Phys.Conf.Ser.No 167,1999)。
开发出的一种基物由成份为Nia(Mob,Wc)dMe的镍合金构成,其中M为一或多种除镍、钼和钨之外的金属(DE100 05 861 A1)。这了制造这样的材料首先要用熔炼冶金或粉末冶金的方法或者通过机械冶金的方法制造所述成份的合金,然后用热压成形接着高度地冷成形加工成带。把加工成的带在还原或者说非氧化的环境中受重结晶退火。与技术上的纯镍比较,如此加工的生产材料构成高度并且热稳定的晶体立方结构,并且可以用作具有高度微结构取向的物理化学覆层。
人们在致力于提高这种材料的强度。这可以通过混合晶体硬度达到,该方法中,对镍高于一或多个合金原成份的5%的镍合金进行冷轧和再结晶(美国专利5964 966、G.Celentanoet al.,Int.Journal ofModern Physics B,13,1999,s.1029;R.Nekkanti et al.,presentation at theApplied Supercond.Conf.,Virginia Beach,Virginia,Sept.17-22,2000),也可以通过轧制和再结晶由镍和高拉伸强度的材料结合物得到(T.Watanabe et al.,presentation at the Applied Supercond.Conf.,VirginiaBeach,Virginia,Sept.17-22,2000)。
在混合结晶强度方面存在一个临界合金度,超过此度就不再能够构成立体结晶结构了。人们把这个现象对于混合合金(加大了锌组份的铜锌合金)进行了大量的研究,并且认为是普遍成立的(H.Hu etal.,AIME,227,1963,S.627;G.Wassermann,J.Gremwn:Texturenmetallischer Werkstoffe,Springer-verlag berlin/Goettingen/Heidelbeg)。因为强度随着合金浓度增加而提高,所述必然关系到最高的强度。第二个局限是在辊轧成形时就有了较高的强度。因此,在必须的高度形变出现很大的辊轧力,从而必须提高对轧机的要求,另一方面要进行特别均匀的轧制形变在技术上是困难的,而特别均匀的轧制形变是构成所要求的高度立体结晶结构必须的。
通过轧制由镍、铜或者银合金与高强度材料结合物提高强度时,同样有强度非常高的原料的强烈形变出现的高轧压力问题。由于构成结合物的两个材料的机械特性差别,在轧制时在边界层出现剪切应力,从而在形变微结构中出现不均匀性,出现的这种不均匀性降低再结晶过程中可达到的立体结晶结构的质量。
提高金属基质的强度的一种可能性还在于公知的弥散硬化,其中,利用在基质中微细弥散的颗粒,优选地陶瓷颗粒。在此,所述颗粒可以用粉末冶金的方式加入也可以通过放热反应就地产生。
用这种技术制造的材料还不适用于通过轧制和再结晶加工成薄的双轴线的晶体结构带。一方面所述材料在轧制时已经有了很高的强度,另一方面迄今还没有能够证实在含弥散颗粒的带中构成适于应用的非常明显的立体结晶结构。
除了提高强度的努力之外,人们还致力于开发非磁化的底物,以避免交流电应用时的磁滞损耗(US5964966)。另外,还有人致力于利用基物带稳定起旁路作用的载流超导层(C.Cantoni et al.,presentation at the Applied Supercond.Conf.,Virginia Beach,Virginia,Sept.17-22,2000)。为了实现这种功能,基物必须具有尽可能高的电导率。
发明概述
本发明旨在创造具有双轴线的晶粒取向层的外延覆层金属带,所述具有双轴线的晶粒取向层的外延覆层金属带有较高的拉延强度,很小的磁损耗和/或高的电导率。本发明还旨在创造在实施中毫无问题地制造这种带的工艺。
该任务根据本发明用权利要求中所述的一层或多层金属带以及所属的制造方法达到。
根据本发明所述金属带由镍、铜、银或合金作基础材料,其中,单层的金属带及多层金属带的至少其中一层具有10毫微米至2微米厚的,含0.1至5%体积的碳化、硼化、氧化和/或氮化物提高强度的弥散颗粒,并且,其中在多层金属带的情况下,所述的层构成复合物,而其中至少一个层没有弥散颗粒且同时有双轴线的晶体结构,其中,碳化物弥散颗粒可以由Cr4C、Cr7C3、Cr3C2、B4C、WC、Mo2C、VC、NbC、TaC和/或TiB构成,硼化物弥散颗粒可以由AlB12、ZrB2、Co3B、W2B5和/或TiB2构成,氧化物弥散颗粒可以由ZrO2、TiO2、Al2O3、SiO2、ThO2和/或CeO2构成,氮化物弥散颗粒可以由BN、Si3N4、W2N3、ZrN、TiN和/或CrN构成。
多层金属带的层可以由统一的基础材料构成也可以至少一个层在基础材料上与其余的层不同。
根据一个适宜的扩展,含弥散颗粒的层由铜、铜合金或者镍合金构成,而不含弥散颗粒的,双轴线晶体结构的层由镍或者镍合金作基础材料构成。
为制造这种带根据本发明采用由镍、铜、银或者其合金作为基础材料的,并且含有2-5%原子量的可氧化、可氮化、可硼化和/或可碳化的元素的添加物的原始材料。由这样的原始材料利用金属成形技术制造一层或者多层的带,其中为制造多层金属带至少其一层采用没有上述组成的基础材料。然后把所述带投入再结晶退火中构成立体结晶结构。最后把所述带在氧、氮、硼或碳分压高于氧化物、氮化物、硼化物和碳化物的均衡分压的条件下进行退火,所述合金中所含的添加物的氧化物、氮化物、硼化物和碳化物的均衡分压低于所述带合金的基本元素镍、铜和银的氧化物、氮化物、硼化物和碳化物的均衡分压。
适宜地采用基础材料中添加物含有1至2%氧化物、氮化物、硼化物和碳化物的原始材料。
如果在氧环境下加退火,应当把所述带投入到750至1000℃的温度。
用根据本发明的方法可以用较简单的方式制造高强度、双轴线结晶结构的镍、铜银或者其合金的金属带。这里特别有优势的是,在成形加工工序时的带还是有利的低强度,因为提高强度的弥散颗粒只是在最后退火处理中才在带中构成。此外因为弥散颗粒在再结晶后才产生,因此以有利的方式不影响立体结晶结构的产生。
根据本发明的金属带组合在具有双轴线晶体结构层同时高抗拉强度的外延覆层方面具有非常良好的特性。这里,这种非常良好的覆层特性出于这样的事实:形成金属带的外延覆层的一定的层没有弥散颗粒,从而在该层表面上没有干扰外延结构的氧化颗粒。如果所述组合层之一用铜制造,组合层则有较高的电导率。该基物组合适合于设在无弥散颗粒层上起旁路作用的超导层。另外,由于铜是非磁化性的,在应用交流电时还很少有磁滞损耗。
具体实施方式
例1
熔炼有1%原子量铝的镍合金。通过在1100℃热成形处理把合金的结构均化为四棱形体,接着用99.8%的形变度轧成40微米厚的带。然后在一定的氧分压下在容器中以900℃退火30小时。其中,对氧分压的调节是通过在所述容器中添加镍和氧化镍的粉末混合物使氧分压与氧化镍的取代反应相对应,并且远低于三氧化二铝的均衡分压。通过这样退火,由含在带中的铝构成提高强度的三氧化二铝弥散颗粒。
成品带具有高度的立体结晶结构。该带的延展边界为200Mpa,是纯镍的4.5倍高。
例2
熔炼有1%原子量铝的镍合金。通过在1100℃热成形处理把合金的结构均化为四棱形体,接着用99.8%的形变度轧成40微米厚的带。然后在氧分压为10-3Pa下在真空炉中以900℃退火30小时。通过这样退火,由含在带中的铝构成提高强度的三氧化二铝弥散颗粒。
成品带具有高度的立体结晶结构。该带的延展边界为180Mpa,是纯镍的4.5倍高。
例3
熔炼有1.5%原子量硅的镍合金。通过在1100℃热成形处理把合金的结构均化为四棱形体,接着用99.8%的形变度轧成40微米厚的带。然后在一定的氧分压下在容器中以900℃退火30小时。其中,对氧分压的调节是通过在所述容器中添加镍和氧化镍的粉末混合物使氧分压与氧化镍的取代反应相对应,并且远低于二氧化硅的均衡分压。通过这样退火,由含在带中的硅构成提高强度的二氧化硅弥散颗粒。
成品带具有高度的立体结晶结构。该带的延展边界为200Mpa。
例4
首先制造由直径30毫米的圆柱形和外径42毫米的包围该圆柱形的管构成的组合毛坯。圆柱形的材料采用有1.5%原子量铝的镍。所述管用纯镍制造。
把这种组合锻造成35毫米厚的圆柱形。然后在1100℃把圆柱形成形处理为矩形截面的棒材,接着用99.8%的形变度轧成40微米厚的带。然后在一定的氧分压下在容器中以900℃退火30小时。其中,对氧分压的调节是通过在所述容器中添加镍和氧化镍的粉末混合物使氧分压与氧化镍的取代反应相对应,并且远低于三氧化二铝的均衡分压。通过这样退火,由所述带的镍核心中的铝构成提高强度的三氧化二铝弥散颗粒。
这样制成的带具有其中含有三氧化二铝弥散颗粒的镍核。该核由纯镍制造的覆层包绕,所述的纯镍制造的覆层具有清晰的立体结晶结构而没有氧化物颗粒。
这样制造的带的延展边界为180Mpa。
例5
首先制造由直径30毫米的圆柱形和外径42毫米的包围该圆柱形的管构成的组合毛坯。圆柱形的材料采用有1.5%原子量铝的铜。所述管用纯镍制造。
把这种组合锻造成35毫米厚的圆柱形。然后在1100℃把圆柱形成形处理为矩形截面的棒材,接着用99.8%的形变度轧成40微米厚的带。把所述的带以900℃退火30小时。其中,对氧分压的调节是通过在所述容器中添加镍和氧化镍的粉末混合物使氧分压与氧化镍的取代反应相对应,并且远低于三氧化二铝的均衡分压。通过这样退火,由所述带的铜核心中的铝构成提高强度的三氧化二铝弥散颗粒。
这样制成的带具有其中含有三氧化二铝弥散颗粒的铜核。该核由纯镍制造的覆层包绕,所述的纯镍制造的覆层具有清晰的立体结晶结构而没有氧化物颗粒。
这样制造的带的延展边界为160Mpa。
例6
组合毛坯由直径30毫米的Ni93,5W5Al1,5合金圆柱形和外径42毫米的包围该圆柱形Ni95W5合金的管构成,把这种毛坯锻造成35毫米厚的圆柱形。然后在1100℃均化,接着用99.8%的形变度轧成40微米厚的带。把所述的带以900℃退火30小时。其中,对氧分压的调节是通过在所述容器中添加镍和氧化镍的粉末混合物使氧分压与氧化镍的取代反应相对应,并且远低于三氧化二铝的均衡分压。通过这样退火,由所述带的Ni93,5W5Al1,5核心中的铝构成提高强度的三氧化二铝弥散颗粒。
这样制成的带具有其中含有三氧化二铝弥散颗粒的镍钨合金核。该核由纯镍制造的覆层包绕,所述的纯镍制造的覆层具有清晰的立体结晶结构而没有氧化物颗粒。
这样制造的带的延展边界为300Mpa。
Claims (6)
1.具有双轴晶粒结构的外延覆层的一层或多层金属带,其特征在于,由镍、铜、银或合金作基础材料,其中,单层的金属带及多层金属带的至少其中之一层具有10毫微米至2微米厚的,含0.1至5%体积的碳化、硼化、氧化和/或氮化物提高强度的弥散颗粒,并且,其中在多层金属带的情况下,所述的层构成复合物,而其中至少一个层没有弥散颗粒且同时有双轴线的晶体结构,其中,碳化物弥散颗粒由Cr4C、Cr7C3、Cr3C2、B4C、WC、Mo2C、VC、NbC、TaC和/或TiC构成,硼化物弥散颗粒由AlB12、ZrB2、Co3B、W2B5和/或TiB2构成,氧化物弥散颗粒由ZrO2、TiO2、Al2O3、SiO2、ThO2和/或CeO2构成,氮化物弥散颗粒由BN、Si3N4、W2N3、ZrN、TiN和/或CrN构成。
2.权利要求1所述的金属带,其特征在于,多层金属带的层可以由统一的基础材料构成也可以至少一个层在基础材料上与其余的层不同。
3.权利要求1所述的金属带,其特征在于,含弥散颗粒的层由铜、铜合金或者镍合金构成,而不含弥散颗粒的双轴线晶体结构的层由镍或者镍合金作基础材料构成。
4.制造权利要求1至3之一所述的单层或多层金属带的方法,其特征在于,采用由镍、铜、银或者其合金作为基础材料的,并且含有2-5%原子量的可氧化、可氮化、可硼化和/或可碳化的元素的添加物的原始材料,由这样的原始材料利用金属成形技术制造一层或者多层的带,其中,为制造多层金属带至少其一层采用没有上述组成的基础材料,然后把所述带投入再结晶退火中构成立体结晶结构,最后把所述带在氧、氮、硼或碳分压高于氧化物、氮化物、硼化物和碳化物的均衡分压的条件下进行退火,所述合金中所含的添加物的氧化物、氮化物、硼化物和碳化物的均衡分压低于所述带合金的基本元素镍、铜和银的氧化物、氮化物、硼化物和碳化物的均衡分压。
5.权利要求4所述的方法,其特征在于,采用在以镍、铜、银或其合金为基础材料的,其中添加物含有1至2%氧化物、氮化物、硼化物和碳化物的原始材料。
6.权利要求4所述的方法,其特征在于,如果在氧环境下加退火,应当把所述带投入到750至1000℃的温度。
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