CN119110986A - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN119110986A
CN119110986A CN202380037184.6A CN202380037184A CN119110986A CN 119110986 A CN119110986 A CN 119110986A CN 202380037184 A CN202380037184 A CN 202380037184A CN 119110986 A CN119110986 A CN 119110986A
Authority
CN
China
Prior art keywords
insulating film
electrode
organic insulating
semiconductor substrate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380037184.6A
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English (en)
Chinese (zh)
Inventor
白坂敏明
柴田智章
福住志津
奥田唯史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Resonac Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Resonac Corp filed Critical Resonac Corp
Publication of CN119110986A publication Critical patent/CN119110986A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/019Manufacture or treatment of bond pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00Direct bonding of chips, wafers or substrates
    • H10W80/011Manufacture or treatment of pads or other interconnections to be direct bonded
    • H10W80/031Changing or setting shapes of the pads
    • H10W80/037Changing or setting shapes of the pads by mechanical treatment, e.g. by cutting, pressing or stamping
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00Direct bonding of chips, wafers or substrates
    • H10W80/301Bonding techniques, e.g. hybrid bonding
    • H10W80/312Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of electrically conductive pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00Direct bonding of chips, wafers or substrates
    • H10W80/301Bonding techniques, e.g. hybrid bonding
    • H10W80/327Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00Direct bonding of chips, wafers or substrates
    • H10W80/301Bonding techniques, e.g. hybrid bonding
    • H10W80/331Bonding techniques, e.g. hybrid bonding characterised by the application of energy for connecting
    • H10W80/333Compression bonding
    • H10W80/334Thermocompression bonding

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
CN202380037184.6A 2022-05-25 2023-05-23 半导体装置的制造方法 Pending CN119110986A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PCT/JP2022/021410 WO2023228321A1 (ja) 2022-05-25 2022-05-25 半導体装置の製造方法
JPPCT/JP2022/021410 2022-05-25
PCT/JP2023/019135 WO2023228940A1 (ja) 2022-05-25 2023-05-23 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
CN119110986A true CN119110986A (zh) 2024-12-10

Family

ID=88918697

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380037184.6A Pending CN119110986A (zh) 2022-05-25 2023-05-23 半导体装置的制造方法

Country Status (5)

Country Link
US (1) US20250336881A1 (https=)
JP (1) JPWO2023228940A1 (https=)
CN (1) CN119110986A (https=)
TW (1) TW202401532A (https=)
WO (2) WO2023228321A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121909226A (zh) * 2024-08-08 2026-04-21 株式会社力森诺科 混合键合用硬化性树脂组合物及制造电路连接体的方法
WO2026078823A1 (ja) * 2024-10-09 2026-04-16 株式会社レゾナック 半導体装置の製造方法
WO2026078824A1 (ja) * 2024-10-09 2026-04-16 株式会社レゾナック 半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021131080A1 (ja) * 2019-12-27 2021-07-01 ボンドテック株式会社 接合方法、被接合物および接合装置
JP7543712B2 (ja) * 2020-06-12 2024-09-03 株式会社レゾナック 半導体装置の製造方法
WO2022070362A1 (ja) * 2020-09-30 2022-04-07 昭和電工マテリアルズ株式会社 樹脂組成物、半導体装置の製造方法、硬化物及び半導体装置

Also Published As

Publication number Publication date
JPWO2023228940A1 (https=) 2023-11-30
WO2023228321A1 (ja) 2023-11-30
US20250336881A1 (en) 2025-10-30
TW202401532A (zh) 2024-01-01
WO2023228940A1 (ja) 2023-11-30

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