CN1186802C - 顺序横向固化方法加工期间及其后硅薄膜的表面平面化 - Google Patents

顺序横向固化方法加工期间及其后硅薄膜的表面平面化 Download PDF

Info

Publication number
CN1186802C
CN1186802C CNB008106878A CN00810687A CN1186802C CN 1186802 C CN1186802 C CN 1186802C CN B008106878 A CNB008106878 A CN B008106878A CN 00810687 A CN00810687 A CN 00810687A CN 1186802 C CN1186802 C CN 1186802C
Authority
CN
China
Prior art keywords
laser pulse
homogenizing
polycrystalline
fluence
thin films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB008106878A
Other languages
English (en)
Chinese (zh)
Other versions
CN1363117A (zh
Inventor
J·S·艾姆
R·S·斯波西利
M·A·克劳德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Columbia University in the City of New York
Original Assignee
Columbia University in the City of New York
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Columbia University in the City of New York filed Critical Columbia University in the City of New York
Publication of CN1363117A publication Critical patent/CN1363117A/zh
Application granted granted Critical
Publication of CN1186802C publication Critical patent/CN1186802C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/3568—Modifying rugosity
    • B23K26/3576—Diminishing rugosity, e.g. grinding; Polishing; Smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
CNB008106878A 2000-03-21 2000-03-21 顺序横向固化方法加工期间及其后硅薄膜的表面平面化 Expired - Fee Related CN1186802C (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2000/007479 WO2001071791A1 (en) 2000-03-21 2000-03-21 Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method

Publications (2)

Publication Number Publication Date
CN1363117A CN1363117A (zh) 2002-08-07
CN1186802C true CN1186802C (zh) 2005-01-26

Family

ID=21741175

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB008106878A Expired - Fee Related CN1186802C (zh) 2000-03-21 2000-03-21 顺序横向固化方法加工期间及其后硅薄膜的表面平面化

Country Status (10)

Country Link
EP (1) EP1196947A4 (es)
JP (1) JP4220156B2 (es)
KR (1) KR100672909B1 (es)
CN (1) CN1186802C (es)
AU (1) AU2000240180A1 (es)
CA (1) CA2374498A1 (es)
HK (1) HK1046469A1 (es)
MX (1) MXPA01011852A (es)
TW (1) TW499717B (es)
WO (1) WO2001071791A1 (es)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107000116A (zh) * 2014-09-11 2017-08-01 苏斯微科光电系统股份有限公司 包括用于多种深度蚀刻的掩模的激光蚀刻系统

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
KR100333275B1 (ko) * 1999-05-20 2002-04-24 구본준, 론 위라하디락사 액정표시장치의 ｔｆｔ 및 그 제조방법
US6860939B2 (en) 2002-04-23 2005-03-01 Sharp Laboratories Of America, Inc. Semiconductor crystal-structure-processed mechanical devices, and methods and systems for making
US7156916B2 (en) 2002-04-23 2007-01-02 Sharp Laboratories Of America, Inc. Monolithic integrated crystal-structure-processed mechanical, and combined mechanical and electrical devices, and methods and systems for making
US7135070B2 (en) 2002-04-23 2006-11-14 Sharp Laboratories Of America, Inc. Monolithic stacked/layered crystal-structure-processed mechanical, and combined mechanical and electrical, devices and methods and systems for making
US7128783B2 (en) 2002-04-23 2006-10-31 Sharp Laboratories Of America, Inc. Thin-film crystal-structure-processed mechanical devices, and methods and systems for making
US7125451B2 (en) 2002-04-23 2006-10-24 Sharp Laboratories Of America, Inc. Crystal-structure-processed mechanical devices and methods and systems for making
KR101131040B1 (ko) * 2002-08-19 2012-03-30 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 에지 영역을 최소화하도록 기판 상의 박막 영역을 레이저결정화 처리하는 방법 및 시스템, 그리고 그러한 박막 영역의 구조
KR20050047103A (ko) 2002-08-19 2005-05-19 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 다양한 조사 패턴을 포함하는 원 샷 반도체 가공 시스템 및방법
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
JP2005129769A (ja) 2003-10-24 2005-05-19 Hitachi Ltd 半導体薄膜の改質方法、改質した半導体薄膜とその評価方法、およびこの半導体薄膜で形成した薄膜トランジスタ、並びにこの薄膜トランジスタを用いて構成した回路を有する画像表示装置
JP2007165716A (ja) 2005-12-15 2007-06-28 Advanced Lcd Technologies Development Center Co Ltd レーザー結晶化装置及び結晶化方法
JP2009032969A (ja) * 2007-07-27 2009-02-12 Sharp Corp 半導体薄膜の製造装置、その方法、その方法によって作製された半導体薄膜および半導体素子
TW200942935A (en) 2007-09-21 2009-10-16 Univ Columbia Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same
CN101919058B (zh) 2007-11-21 2014-01-01 纽约市哥伦比亚大学理事会 用于制备外延纹理厚膜的系统和方法
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
CN103745925A (zh) * 2013-11-14 2014-04-23 上海和辉光电有限公司 一种平坦化多晶硅薄膜的制造方法
TWI577488B (zh) * 2014-11-17 2017-04-11 財團法人工業技術研究院 表面加工方法
CN104779139A (zh) * 2015-03-31 2015-07-15 深超光电（深圳）有限公司 半导体薄膜的制造方法及薄膜晶体管的制造方法
CN106298451A (zh) * 2016-08-18 2017-01-04 昆山国显光电有限公司 激光晶化方法及装置
WO2019146021A1 (ja) * 2018-01-24 2019-08-01 ギガフォトン株式会社 レーザ加工方法及びレーザ加工システム

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2569711B2 (ja) * 1988-04-07 1997-01-08 株式会社ニコン 露光制御装置及び該装置による露光方法
US5523193A (en) * 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
JPH0433327A (ja) * 1990-05-30 1992-02-04 Kyocera Corp 半導体結晶化膜の形成方法
JP2973492B2 (ja) * 1990-08-22 1999-11-08 ソニー株式会社 半導体薄膜の結晶化方法
KR100299292B1 (ko) * 1993-11-02 2001-12-01 이데이 노부유끼 다결정실리콘박막형성방법및그표면처리장치
US5496768A (en) * 1993-12-03 1996-03-05 Casio Computer Co., Ltd. Method of manufacturing polycrystalline silicon thin film
JPH07249591A (ja) * 1994-03-14 1995-09-26 Matsushita Electric Ind Co Ltd 半導体薄膜のレーザーアニール方法及び薄膜半導体素子
JP3326654B2 (ja) * 1994-05-02 2002-09-24 ソニー株式会社 表示用半導体チップの製造方法
TW297138B (es) * 1995-05-31 1997-02-01 Handotai Energy Kenkyusho Kk
CA2256699C (en) * 1996-05-28 2003-02-25 The Trustees Of Columbia University In The City Of New York Crystallization processing of semiconductor film regions on a substrate, and devices made therewith
GB9819338D0 (en) * 1998-09-04 1998-10-28 Philips Electronics Nv Laser crystallisation of thin films
US6573531B1 (en) * 1999-09-03 2003-06-03 The Trustees Of Columbia University In The City Of New York Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures
US6368945B1 (en) * 2000-03-16 2002-04-09 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107000116A (zh) * 2014-09-11 2017-08-01 苏斯微科光电系统股份有限公司 包括用于多种深度蚀刻的掩模的激光蚀刻系统

Also Published As

Publication number Publication date
EP1196947A4 (en) 2003-08-13
TW499717B (en) 2002-08-21
JP4220156B2 (ja) 2009-02-04
AU2000240180A1 (en) 2001-10-03
MXPA01011852A (es) 2002-05-06
EP1196947A1 (en) 2002-04-17
HK1046469A1 (zh) 2003-01-10
CA2374498A1 (en) 2001-09-27
WO2001071791A1 (en) 2001-09-27
KR100672909B1 (ko) 2007-01-22
JP2003528463A (ja) 2003-09-24
KR20020002466A (ko) 2002-01-09
CN1363117A (zh) 2002-08-07

Similar Documents

Publication Publication Date Title
CN1186802C (zh) 顺序横向固化方法加工期间及其后硅薄膜的表面平面化
CN1198318C (zh) 低温下用顺序横向固化制造单晶或多晶硅薄膜的系统和方法
US7704862B2 (en) Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
CN1235268C (zh) 用顺序横向固化制造均匀大晶粒和晶粒边界位置受控的多晶硅薄膜半导体的方法
CN1139105C (zh) 半导体层激光退火的方法
US7208358B2 (en) Laser annealing method
CN1252796C (zh) 利用掩膜使非晶硅结晶的方法
CN1364310A (zh) 提供连续运动顺序横向固化的方法和系统
US20070007242A1 (en) Method and system for producing crystalline thin films with a uniform crystalline orientation
CN1674229A (zh) 多晶半导体膜制造方法及其装置和图像显示面板
CN100442440C (zh) 半导体薄膜的形成方法和半导体薄膜的形成装置
JP2002280569A (ja) 主として＜１００＞配向した多結晶シリコン膜上に薄膜トランジスタを形成する方法
CN1716071A (zh) 结晶方法、薄膜晶体管制造方法、薄膜晶体管及显示装置
JPH03289128A (ja) 半導体薄膜結晶層の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
REG Reference to a national code

Ref country code: HK

Ref legal event code: WD

Ref document number: 1046469

Country of ref document: HK

C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20050126

Termination date: 20100321