CN118368912A - Three-terminal hybrid back contact crystalline silicon/trans perovskite laminated solar cell structure - Google Patents
Three-terminal hybrid back contact crystalline silicon/trans perovskite laminated solar cell structure Download PDFInfo
- Publication number
- CN118368912A CN118368912A CN202410464885.4A CN202410464885A CN118368912A CN 118368912 A CN118368912 A CN 118368912A CN 202410464885 A CN202410464885 A CN 202410464885A CN 118368912 A CN118368912 A CN 118368912A
- Authority
- CN
- China
- Prior art keywords
- layer
- perovskite
- trans
- solar cell
- crystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 23
- 238000002161 passivation Methods 0.000 claims abstract description 23
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 claims abstract description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 14
- 230000031700 light absorption Effects 0.000 claims abstract description 11
- 230000005525 hole transport Effects 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 4
- 230000005540 biological transmission Effects 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 5
- 230000000052 comparative effect Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Landscapes
- Photovoltaic Devices (AREA)
Abstract
A three-terminal hybrid back contact crystalline silicon/trans perovskite laminated solar cell structure belongs to the field of solar cells. The method comprises a trans-perovskite top cell and a hybrid back contact crystalline silicon bottom cell, wherein the trans-perovskite top cell comprises the following steps from top to bottom: a first metal electrode layer, a first transparent electrode layer, a hole transport layer, a perovskite light absorption layer and an electron transport layer. The hybrid back contact crystalline silicon bottom cell comprises the following components from top to bottom: the electrode back contact area is divided into a TOPCon area and an SHJ area, wherein the TOPCon area is sequentially provided with a second passivation layer, a polycrystalline silicon layer, a second transparent electrode layer and a second metal electrode layer from top to bottom, and the SHJ area is sequentially provided with a third passivation layer, a nanocrystalline silicon layer, a third transparent electrode layer and a third metal electrode layer from top to bottom. The solar laminated battery improves the solar energy utilization rate, avoids the negative influence on the battery efficiency caused by the current matching limitation of a two-end laminated structure and the serious optical loss of a four-end laminated structure, reduces the optical loss and obtains higher photoelectric conversion efficiency.
Description
Technical Field
The invention relates to the field of solar cell structure design, in particular to a three-terminal hybrid back contact crystalline silicon/trans perovskite laminated solar cell structure.
Background
Currently, the world is facing challenges such as severe climate change, energy shortage and energy safety, and thus there is an urgent need to rely on renewable energy sources to solve these problems. Solar energy is an widely distributed and inexhaustible clean energy source and plays an important role in various renewable energy sources. The solar cell directly converts light energy into electric energy by utilizing photovoltaic effect, and along with the progress of technology, the solar cell technology is continuously improved, and the cost is gradually reduced. However, the current power generation cost of solar cells is still higher than that of conventional energy sources. To compete with conventional energy sources and become dominant energy sources, it is necessary to continuously reduce the power generation cost of solar cells and to improve their conversion efficiency.
Crystalline silicon batteries are also called first generation solar batteries and are dominant in the photovoltaic field, but the battery efficiency is difficult to be greatly improved due to the silicon materials, in recent years, the perovskite solar battery technology is rapidly developed, breakthrough is continuously achieved in the aspects of efficiency improvement and area amplification, but the forbidden band width of the perovskite materials is larger, so that a large part of incident light cannot contribute to form electron hole pairs, and the short-circuit current of the perovskite batteries is too low. According to the invention, a perovskite solar cell with a larger forbidden bandwidth is used as a top cell to absorb high-energy photons, and a hybrid back contact crystalline silicon solar cell with a smaller forbidden bandwidth is used as a bottom cell to absorb low-energy photons, so that the solar energy utilization rate can be effectively improved.
The p-n junction of a conventional solar cell is composed of the same semiconductor material of opposite conductivity type, commonly referred to as a homojunction. And a junction composed of two different semiconductor materials having different forbidden bandwidths is called a heterojunction. Heterojunction has a higher implantation efficiency than homojunction and is thus receiving a great deal of attention. In recent years, the heterojunction solar cell is applied to a laminated solar cell to become a research hot spot, and the heterojunction solar cell structure is applied to a bottom cell, so that the conversion efficiency of the solar cell is effectively improved.
Currently, crystalline silicon/perovskite stacked cells extend to traditional single junction cell "sandwich" device structures, mainly with two-terminal (2T) series connection and four-terminal (4T) mechanical stacked structures in large numbers; but suffers from (inter-top/bottom cell) current matching limitations and (inter-top/bottom cell) additional electrode optical losses, respectively, and device efficiency is far below stack SQ theoretical limits. The three-terminal hybrid back contact crystalline silicon/trans perovskite laminated solar cell provided by the invention not only bears the (traditional) low-energy photon absorption and conversion effects, but also takes the (new) purpose of transporting perovskite top cell electrons into consideration, thereby avoiding the negative effects on cell efficiency caused by current matching limitation of a 2T laminated structure and serious optical loss of a 4T laminated structure.
Disclosure of Invention
The invention aims to solve the technical problem of providing a three-terminal hybrid back contact crystalline silicon/trans perovskite laminated solar cell structure.
The three-terminal hybrid back contact crystalline silicon/trans perovskite laminated solar cell structure is characterized by comprising a trans perovskite top cell and a hybrid back contact crystalline silicon bottom cell.
The trans perovskite top battery is set up from top to bottom in proper order: the organic light-emitting diode comprises a first metal electrode layer (1), a first transparent electrode layer (2), a hole transmission layer (3), a perovskite light absorption layer (4) and an electron transmission layer (5).
The hybrid back contact crystalline silicon bottom cell is sequentially provided with the following components from top to bottom: the electrode back contact area is divided into two parallel independent areas: TOPCon area and SHJ area, wherein TOPCon area sets gradually as second passivation layer (8), polycrystalline silicon layer (10), second transparent electrode layer (12), second metal electrode layer (14) from the top down, and SHJ area sets gradually as third passivation layer (9), nanocrystalline silicon layer (11), third transparent electrode layer (13), third metal electrode layer (15) from the top down.
The lower surface of the electron transport layer (5) is provided with a first passivation layer (6), and the lower surface of the crystalline silicon light absorption layer (7) is provided with a second passivation layer (8) and a third passivation layer (9) which are arranged in parallel.
The hybrid back contact crystalline silicon bottom cell adopts an electrode back contact area in which a TOPCon solar cell structure and an SHJ solar cell structure are mixed.
The trans-perovskite top cell hole transport layer (3) and the perovskite absorption layer (4) can provide a fixed charge field passivation effect by introducing an ultrathin alumina layer.
The perovskite film of the perovskite light top battery is prepared by a solution method and is covered on the electron transport layer (5).
The perovskite solar cell structure adopts a trans-perovskite solar cell structure.
The upper surface of the crystal silicon light absorbing layer (7) adopts pyramid (micro) suede, the size is smaller than 1 mu m, the SHJ area of the lower surface of the crystal silicon light absorbing layer adopts pyramid (large) suede, and the size is 2-5 mu m.
When the polycrystalline silicon layer (10) adopts p-type doped polycrystalline silicon, the nanocrystalline silicon layer (11) is n-type doped nanocrystalline silicon, and when the polycrystalline silicon layer (10) adopts n-type doped polycrystalline silicon, the nanocrystalline silicon layer (11) is p-type doped nanocrystalline silicon.
The first transparent electrode layer (2), the second transparent electrode layer (12) and the third transparent electrode layer (13) are all transparent conductive oxide films.
The second metal electrode layer (14) and the third metal electrode layer (15) are made of the same metal material or different metal materials.
The beneficial effects of the invention are as follows:
according to the three-terminal hybrid back contact crystalline silicon/trans perovskite laminated solar cell structure, the trans perovskite solar cell is used as a top cell to absorb high-energy photons, the hybrid back contact crystalline silicon solar cell is used as a bottom cell to absorb low-energy photons, solar cells with different band gaps are stacked, and solar energy is fully utilized.
The three-terminal hybrid back contact crystalline silicon/trans perovskite laminated solar cell structure utilizes the dual functions of the hybrid back contact crystalline silicon bottom cell, not only bears the (traditional) low-energy photon absorption and conversion function, but also takes the (new) purpose of transporting electrons of the perovskite top cell into consideration, thereby avoiding the negative effects on the cell efficiency caused by the current matching limitation of the 2T laminated structure and the serious optical loss of the 4T laminated structure.
According to the three-terminal hybrid back-contact crystalline silicon/trans-perovskite laminated solar cell structure, an asymmetric textured structure is used, and the characteristic of good crystallinity of a solution perovskite film is utilized to be matched with a crystalline silicon small pyramid micro textured structure, so that non-radiative recombination caused by crystal boundary and surface defects of the perovskite solar cell is reduced, and the solar energy utilization rate is improved.
Drawings
Fig. 1 is a schematic structural diagram of a three-terminal hybrid back-contact crystalline silicon/trans-perovskite stacked solar cell according to the present invention, and the examples shown in the figure are: the device comprises a first metal electrode layer (1), a first transparent electrode layer (2), a hole transmission layer (3), a perovskite light absorption layer (4), an electron transmission layer (5), a first passivation layer (6), a crystalline silicon light absorption layer (7), a second passivation layer (8), a third passivation layer (9), a polycrystalline silicon layer (10), a nanocrystalline silicon layer (11), a second transparent electrode layer (12), a third transparent electrode layer (13), a second metal electrode layer (14) and a third metal electrode layer (15).
Fig. 2 is a schematic diagram of a four-terminal hybrid back-contact crystalline silicon/trans perovskite stacked solar cell using the same material, and the example is shown as follows: the light-emitting diode comprises a first metal electrode layer (1), a first transparent electrode layer (2), a hole transmission layer (3), a perovskite light absorption layer (4), an electron transmission layer (5), a second transparent electrode layer (6), a second metal electrode layer (7), a third transparent electrode layer (8), a first passivation layer (9), a crystalline silicon light absorption layer (10), a second passivation layer (11), a third passivation layer (12), a polycrystalline silicon layer (13), a nanocrystalline silicon layer (14), a fourth transparent electrode layer (15), a fifth transparent electrode layer (16), a third metal electrode layer (17) and a fourth metal electrode layer (18).
FIG. 3 is an EQE curve of a three-terminal hybrid back-contact crystalline silicon/trans perovskite tandem solar cell and a four-terminal hybrid back-contact crystalline silicon/trans perovskite tandem solar cell according to an embodiment of the invention.
Fig. 4 is a J-V curve of a three-terminal hybrid back contact crystalline silicon/trans perovskite tandem solar cell according to an embodiment of the invention.
Fig. 5 is a J-V curve of a four-terminal hybrid back contact crystalline silicon/trans perovskite tandem solar cell according to an embodiment of the invention.
Detailed Description
The present invention will be described in detail with reference to examples. The present invention is not limited to the following examples.
Example 1
The invention provides a three-terminal hybrid back-contact crystalline silicon/trans-perovskite stacked solar cell structure, and fig. 1 shows a schematic diagram of the three-terminal hybrid back-contact crystalline silicon/trans-perovskite stacked solar cell structure provided by the embodiment, please refer to fig. 1.
In this embodiment, the trans perovskite top cell is set up in order from top to bottom: a metal Ag electrode layer, an ITO transparent electrode layer, a NiO hole transport layer, a CsPbI 2 Br perovskite light absorption layer and a SnO 2 electron transport layer. The hybrid back contact crystalline silicon bottom cell is sequentially provided with the following components from top to bottom: the amorphous silicon passivation layer, the monocrystalline silicon light absorption layer and the back contact area are divided into TOPCon areas and SHJ areas, wherein the TOPCon areas are sequentially provided with an SiO 2 passivation layer, an n-type doped polycrystalline silicon layer, an ITO transparent electrode layer and a metal Ag electrode layer from top to bottom, and the SHJ areas are sequentially provided with the amorphous silicon passivation layer, the p-type doped nanocrystalline silicon layer, the ITO transparent electrode layer and the metal Ag electrode layer from top to bottom.
Performance testing was performed on the solar cells provided in the examples. Specifically, simulation calculation was performed by Silvaco ATLAS simulation software, and the solar cell provided in example was tested under conditions of 25 ℃ and AM 1.5, 1 standard sun, and fig. 4 is a J-V curve of example 1.
Comparative example 1 structure:
comparative example 1 is a four-terminal hybrid back contact crystalline silicon/solution process trans perovskite stacked solar cell of the same material as the example, and the model structure diagram is shown in fig. 2.
The solar cell provided in comparative example 1 was subjected to performance test. Specifically, simulation calculation was performed by Silvaco ATLAS simulation software, and the solar cell provided in the comparative example was tested under conditions of 25 ℃ and AM 1.5, 1 standard sun, and fig. 5 is a J-V curve of the comparative example 1.
FIG. 3 is an EQE curve of a three-terminal hybrid back-contact crystalline silicon/trans perovskite tandem solar cell and a four-terminal hybrid back-contact crystalline silicon/trans perovskite tandem solar cell according to an embodiment of the invention
In comparison with comparative example 1, the example EQE is superior to comparative example 1 in that the example is no longer limited to light loss due to the excessive transparent conductive layer and the carrier transport layer on the light incident side of the bottom cell.
From the J-V curve of example 1 and the J-V curve of comparative example 1, it was concluded that the photoelectric conversion efficiency of example 1 was better than that of comparative example 1 as shown in Table 1.
Table 1 parameters of the photoelectric properties of examples and comparative examples
Claims (9)
1. The three-terminal hybrid back contact crystalline silicon/trans perovskite laminated solar cell structure is characterized by comprising a trans perovskite top cell and a hybrid back contact crystalline silicon bottom cell;
The trans perovskite top battery is set up from top to bottom in proper order: a first metal electrode layer (1), a first transparent electrode layer (2), a hole transport layer (3), a perovskite light absorption layer (4) and an electron transport layer (5);
The hybrid back contact crystalline silicon bottom cell is sequentially provided with the following components from top to bottom: the electrode back contact area is divided into a TOPCon area and an SHJ area, wherein the TOPCon area is sequentially provided with a second passivation layer (8), a polycrystalline silicon layer (10), a second transparent electrode layer (12) and a second metal electrode layer (14) from top to bottom, and the SHJ area is sequentially provided with a third passivation layer (9), a nanocrystalline silicon layer (11), a third transparent electrode layer (13) and a third metal electrode layer (15) from top to bottom;
the lower surface of the electron transport layer (5) is provided with a first passivation layer (6), and the lower surface of the crystalline silicon light absorption layer (7) is provided with a second passivation layer (8) and a third passivation layer (9) which are arranged in parallel.
2. The three-terminal hybrid back-contact crystalline silicon/trans-perovskite stacked solar cell according to claim 1, wherein: the hybrid back contact crystalline silicon bottom cell adopts an electrode back contact area in which a TOPCon solar cell structure and an SHJ solar cell structure are mixed.
3. The three-terminal hybrid back-contact crystalline silicon/trans-perovskite stacked solar cell according to claim 1, wherein: the trans-perovskite top cell hole transport layer and the perovskite absorption layer can provide a fixed charge field passivation effect by introducing an ultrathin alumina layer.
4. The three-terminal hybrid back-contact crystalline silicon/trans-perovskite stacked solar cell according to claim 1, wherein: the perovskite film of the perovskite light top battery is prepared by a solution method and is covered on the electron transmission layer.
5. The three-terminal hybrid back-contact crystalline silicon/trans-perovskite stacked solar cell according to claim 1, wherein: the perovskite solar cell structure adopts a trans-perovskite solar cell structure.
6. The three-terminal hybrid back-contact crystalline silicon/trans-perovskite stacked solar cell according to claim 1, wherein: the upper surface of the crystal silicon light absorbing layer adopts pyramid (micro) suede, the size is smaller than 1 mu m, the SHJ area of the lower surface of the crystal silicon light absorbing layer adopts pyramid (large) suede, and the size is 2-5 mu m.
7. The three-terminal hybrid back-contact crystalline silicon/trans-perovskite stacked solar cell according to claim 1, wherein: when the polycrystalline silicon layer adopts p-type doped polycrystalline silicon, the nanocrystalline silicon layer is n-type doped nanocrystalline silicon, and when the polycrystalline silicon layer adopts n-type doped polycrystalline silicon, the nanocrystalline silicon layer is p-type doped nanocrystalline silicon.
8. The three-terminal hybrid back-contact crystalline silicon/trans-perovskite stacked solar cell according to claim 1, wherein: the first transparent electrode layer, the second transparent electrode layer and the third transparent electrode layer are all transparent conductive oxide films.
9. The three-terminal hybrid back-contact crystalline silicon/trans-perovskite stacked solar cell according to claim 1, wherein: the second metal electrode layer and the third metal electrode layer are made of the same metal material or different metal materials.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202410464885.4A CN118368912A (en) | 2024-04-17 | 2024-04-17 | Three-terminal hybrid back contact crystalline silicon/trans perovskite laminated solar cell structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202410464885.4A CN118368912A (en) | 2024-04-17 | 2024-04-17 | Three-terminal hybrid back contact crystalline silicon/trans perovskite laminated solar cell structure |
Publications (1)
Publication Number | Publication Date |
---|---|
CN118368912A true CN118368912A (en) | 2024-07-19 |
Family
ID=91877667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202410464885.4A Pending CN118368912A (en) | 2024-04-17 | 2024-04-17 | Three-terminal hybrid back contact crystalline silicon/trans perovskite laminated solar cell structure |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN118368912A (en) |
-
2024
- 2024-04-17 CN CN202410464885.4A patent/CN118368912A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP4024475A1 (en) | P-type bifacial solar cell with partial rear surface field passivation and preparation method therefor | |
CN109509807B (en) | Emitter structure of crystalline silicon heterojunction solar cell and preparation method thereof | |
US12027641B2 (en) | Solar cell and photovoltaic module | |
CN115000198B (en) | Solar cell and photovoltaic module | |
JP2023155871A (en) | Solar cell, photovoltaic module, and method for preparing solar cell | |
CN115985980B (en) | Solar cell and photovoltaic module | |
CN111799348A (en) | Heterojunction back contact solar cell and forming method thereof | |
CN115148841A (en) | Cadmium selenide/crystalline silicon laminated solar cell and preparation method thereof | |
CN108615775B (en) | Interdigital back contact heterojunction monocrystalline silicon battery | |
CN102157596B (en) | Barrier type silicon-based thin film semi-laminated solar cell | |
CN208507687U (en) | Interdigital back contact heterojunction monocrystalline silicon battery | |
CN209981254U (en) | Crystalline silicon double-sided solar cell structure | |
CN106981528B (en) | Back electrode of P-type PERC double-sided solar cell and cell | |
CN216488096U (en) | Heterojunction battery and photovoltaic module | |
RU2757544C1 (en) | Silicon-based double-sided heterojunction photovoltaic converter | |
CN108987508A (en) | The direct-connected solar cell module of single side and preparation method | |
CN115000224A (en) | Double-sided laminated solar cell, cell module and photovoltaic system | |
CN118368912A (en) | Three-terminal hybrid back contact crystalline silicon/trans perovskite laminated solar cell structure | |
CN210272380U (en) | P-type crystalline silicon cell and photovoltaic module | |
CN210403773U (en) | Planar undoped heterojunction-perovskite laminated battery | |
CN108461569B (en) | Si-based double-sided solar cell structure with local emitter characteristic | |
CN206878022U (en) | A kind of multi-crystal silicon film solar battery | |
CN219719002U (en) | Perovskite-crystalline silicon laminated solar cell structure | |
CN219591399U (en) | Laminated solar cell module | |
CN217955889U (en) | Laminated battery for improving current-carrying output |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |