CN118202445A - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN118202445A
CN118202445A CN202280073432.8A CN202280073432A CN118202445A CN 118202445 A CN118202445 A CN 118202445A CN 202280073432 A CN202280073432 A CN 202280073432A CN 118202445 A CN118202445 A CN 118202445A
Authority
CN
China
Prior art keywords
wafer
source
main surface
electrode
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280073432.8A
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English (en)
Chinese (zh)
Inventor
中野佑纪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of CN118202445A publication Critical patent/CN118202445A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H10P95/112—Separation of active layers from substrates leaving a reusable substrate, e.g. epitaxial lift off
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01331—Manufacture or treatment of die-attach connectors using blanket deposition
    • H10W72/01333—Manufacture or treatment of die-attach connectors using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01335—Manufacture or treatment of die-attach connectors using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating

Landscapes

  • Electrodes Of Semiconductors (AREA)
CN202280073432.8A 2021-11-05 2022-10-28 半导体装置的制造方法 Pending CN118202445A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-181322 2021-11-05
JP2021181322 2021-11-05
PCT/JP2022/040503 WO2023080091A1 (ja) 2021-11-05 2022-10-28 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
CN118202445A true CN118202445A (zh) 2024-06-14

Family

ID=86241070

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280073432.8A Pending CN118202445A (zh) 2021-11-05 2022-10-28 半导体装置的制造方法

Country Status (5)

Country Link
US (1) US20240282634A1 (https=)
JP (1) JPWO2023080091A1 (https=)
CN (1) CN118202445A (https=)
DE (1) DE112022004775T5 (https=)
WO (1) WO2023080091A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025224813A1 (ja) * 2024-04-23 2025-10-30 三菱電機株式会社 半導体装置及び半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144123A (ja) * 1999-09-02 2001-05-25 Matsushita Electric Ind Co Ltd 半導体装置の製造方法および半導体装置
CN110785833A (zh) * 2017-06-19 2020-02-11 罗姆股份有限公司 半导体装置的制造方法及晶片粘合结构体
WO2021019697A1 (ja) * 2019-07-30 2021-02-04 昭和電工マテリアルズ株式会社 電子部品装置を製造する方法、及び電子部品装置
JP7259795B2 (ja) * 2020-03-31 2023-04-18 株式会社デンソー 炭化珪素ウェハの製造方法、半導体基板の製造方法および炭化珪素半導体装置の製造方法
JP7054252B2 (ja) 2020-05-18 2022-04-13 川上産業株式会社 包装用緩衝気泡シート、包装用緩衝気泡シートの製造装置、包装用緩衝気泡シートの製造方法

Also Published As

Publication number Publication date
US20240282634A1 (en) 2024-08-22
WO2023080091A1 (ja) 2023-05-11
DE112022004775T5 (de) 2024-09-05
JPWO2023080091A1 (https=) 2023-05-11

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