CN1181600C - 埋入式异质结构 - Google Patents

埋入式异质结构 Download PDF

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Publication number
CN1181600C
CN1181600C CNB971941408A CN97194140A CN1181600C CN 1181600 C CN1181600 C CN 1181600C CN B971941408 A CNB971941408 A CN B971941408A CN 97194140 A CN97194140 A CN 97194140A CN 1181600 C CN1181600 C CN 1181600C
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CN
China
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layer
fabric
multilayer semiconductor
horizontal
interior zone
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Expired - Fee Related
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CNB971941408A
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English (en)
Chinese (zh)
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CN1223021A (zh
Inventor
U
U·乌兰德
M·拉斯克
ж�
B·斯托尔茨
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Telefonaktiebolaget LM Ericsson AB
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Telefonaktiebolaget LM Ericsson AB
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
CNB971941408A 1996-02-27 1997-02-25 埋入式异质结构 Expired - Fee Related CN1181600C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE9600744-8 1996-02-27
SE9600744A SE506651C2 (sv) 1996-02-27 1996-02-27 Begravd heterostruktur
SE96007448 1996-02-27

Publications (2)

Publication Number Publication Date
CN1223021A CN1223021A (zh) 1999-07-14
CN1181600C true CN1181600C (zh) 2004-12-22

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB971941408A Expired - Fee Related CN1181600C (zh) 1996-02-27 1997-02-25 埋入式异质结构

Country Status (11)

Country Link
US (1) US6011811A (sv)
EP (1) EP0883920B1 (sv)
JP (1) JP2000505600A (sv)
KR (1) KR100375275B1 (sv)
CN (1) CN1181600C (sv)
AU (1) AU2109197A (sv)
CA (1) CA2247885A1 (sv)
DE (1) DE69717973T2 (sv)
SE (1) SE506651C2 (sv)
TW (1) TW415112B (sv)
WO (1) WO1997032377A1 (sv)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104201249A (zh) * 2014-09-15 2014-12-10 六安市大宇高分子材料有限公司 一种倒置生长InAlAsP/InGaAs/Ge三结光伏电池的制备方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6549553B1 (en) * 1998-02-25 2003-04-15 Nippon Telegraph And Telephone Corporation Vertical-cavity surface-emitting semiconductor laser
JP4010095B2 (ja) * 1999-10-01 2007-11-21 富士ゼロックス株式会社 面発光型半導体レーザ及びレーザアレイ
US6819695B1 (en) * 2000-01-07 2004-11-16 Triquint Technology Holding Co Dopant diffusion barrier layer for use in III-V structures
US6664605B1 (en) * 2000-03-31 2003-12-16 Triquint Technology Holding Co. Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAs
DE10108079A1 (de) * 2000-05-30 2002-09-12 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
AU2001286620A1 (en) * 2000-08-22 2002-03-04 The Regents Of The University Of California Aigaassb/inp distributed bragg reflector
US6570697B2 (en) * 2000-10-06 2003-05-27 Alphion Corporation Format insensitive and bit rate independent optical preprocessor
US6563621B2 (en) * 2000-10-06 2003-05-13 Alphion Corporation Bit-rate and format insensitive all-optical clock extraction circuit
WO2002054482A2 (en) 2000-12-13 2002-07-11 Mario Dagenais Method of efficient controllable and repeatable wet oxidation in a phosphorous-rich iii-v material system
DE60212755T2 (de) * 2001-04-18 2006-11-16 Nippon Telegraph And Telephone Corp. Optische Halbleitervorrichtung und Herstellungsverfahren
US6534331B2 (en) * 2001-07-24 2003-03-18 Luxnet Corporation Method for making a vertical-cavity surface emitting laser with improved current confinement
JP2003060311A (ja) * 2001-08-21 2003-02-28 Nippon Telegr & Teleph Corp <Ntt> 半導体光素子及びその製造方法
JP2003188411A (ja) * 2001-12-20 2003-07-04 Oki Degital Imaging:Kk 発光半導体装置及びその製造方法
US7042921B2 (en) * 2003-07-11 2006-05-09 Emcore Corporation Complex coupled single mode laser with dual active region
JP4617684B2 (ja) * 2004-02-24 2011-01-26 ソニー株式会社 半導体レーザ素子
JP4962737B2 (ja) * 2008-04-10 2012-06-27 富士通株式会社 光半導体装置
JP2019079911A (ja) * 2017-10-24 2019-05-23 シャープ株式会社 半導体レーザ素子
DE102018110187A1 (de) * 2018-04-27 2019-10-31 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper, Anordnung von einer Vielzahl von optoelektronischen Halbleiterkörpern und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
JP2019192879A (ja) * 2018-04-27 2019-10-31 住友電工デバイス・イノベーション株式会社 光半導体素子およびその製造方法ならびに光集積半導体素子およびその製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873178A (ja) * 1981-10-27 1983-05-02 Fujitsu Ltd 半導体発光装置
CA1218136A (en) * 1983-01-17 1987-02-17 Toshihiro Kawano Semiconductor laser device
JPS60136388A (ja) * 1983-12-26 1985-07-19 Hitachi Ltd 発光電子装置
US4731789A (en) * 1985-05-13 1988-03-15 Xerox Corporation Clad superlattice semiconductor laser
US4955031A (en) * 1988-07-12 1990-09-04 University Of Connecticut Metal insulator semiconductor heterostructure lasers
US5102825A (en) * 1990-01-25 1992-04-07 The United States Of America As Represented By The United States Department Of Energy Method of making an ion-implanted planar-buried-heterostructure diode laser
JP2778178B2 (ja) * 1990-01-31 1998-07-23 日本電気株式会社 半導体レーザ
US5058120A (en) * 1990-02-28 1991-10-15 Kabushiki Kaisha Toshiba Visible light emitting semiconductor laser with inverse mesa-shaped groove section
US5212706A (en) * 1991-12-03 1993-05-18 University Of Connecticut Laser diode assembly with tunnel junctions and providing multiple beams
FR2690286A1 (fr) * 1992-04-17 1993-10-22 Commissariat Energie Atomique Cavité laser à hétérostructure semi-conductrice dissymétrique et laser équipé de cette cavité.
EP0575684A1 (en) * 1992-06-22 1993-12-29 International Business Machines Corporation Decoupled optic and electronic confinement laser diode
JP3444610B2 (ja) * 1992-09-29 2003-09-08 三菱化学株式会社 半導体レーザ装置
US5381434A (en) * 1993-03-30 1995-01-10 Bell Communications Research, Inc. High-temperature, uncooled diode laser
JPH07193333A (ja) * 1993-12-27 1995-07-28 Mitsubishi Chem Corp 半導体発光素子
US5412680A (en) * 1994-03-18 1995-05-02 Photonics Research Incorporated Linear polarization of semiconductor laser
US5889805A (en) * 1996-11-01 1999-03-30 Coherent, Inc. Low-threshold high-efficiency laser diodes with aluminum-free active region

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104201249A (zh) * 2014-09-15 2014-12-10 六安市大宇高分子材料有限公司 一种倒置生长InAlAsP/InGaAs/Ge三结光伏电池的制备方法

Also Published As

Publication number Publication date
KR19990087315A (ko) 1999-12-27
SE9600744L (sv) 1997-08-28
EP0883920A1 (en) 1998-12-16
JP2000505600A (ja) 2000-05-09
SE506651C2 (sv) 1998-01-26
TW415112B (en) 2000-12-11
KR100375275B1 (ko) 2003-05-16
DE69717973D1 (de) 2003-01-30
DE69717973T2 (de) 2003-07-17
CN1223021A (zh) 1999-07-14
SE9600744D0 (sv) 1996-02-27
CA2247885A1 (en) 1997-09-04
WO1997032377A1 (en) 1997-09-04
EP0883920B1 (en) 2002-12-18
US6011811A (en) 2000-01-04
AU2109197A (en) 1997-09-16

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