CN117940440A - 硅前体 - Google Patents
硅前体 Download PDFInfo
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- CN117940440A CN117940440A CN202280061835.0A CN202280061835A CN117940440A CN 117940440 A CN117940440 A CN 117940440A CN 202280061835 A CN202280061835 A CN 202280061835A CN 117940440 A CN117940440 A CN 117940440A
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- Prior art keywords
- compound
- formula
- silicon
- substrate
- precursor
- Prior art date
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- 239000012686 silicon precursor Substances 0.000 title description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000010703 silicon Substances 0.000 claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 37
- 238000004377 microelectronic Methods 0.000 claims abstract description 17
- 238000007740 vapor deposition Methods 0.000 claims abstract description 10
- 150000001875 compounds Chemical class 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 39
- 238000006243 chemical reaction Methods 0.000 claims description 20
- 229910052739 hydrogen Inorganic materials 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 15
- 125000003118 aryl group Chemical group 0.000 claims description 11
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 11
- 150000002431 hydrogen Chemical class 0.000 claims description 10
- 125000006552 (C3-C8) cycloalkyl group Chemical group 0.000 claims description 9
- 229910052736 halogen Inorganic materials 0.000 claims description 9
- 150000002367 halogens Chemical group 0.000 claims description 9
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 5
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 5
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 5
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 5
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 5
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 5
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims 1
- 239000000376 reactant Substances 0.000 abstract description 37
- 239000002243 precursor Substances 0.000 abstract description 29
- 239000000463 material Substances 0.000 abstract description 12
- -1 amine compounds Chemical class 0.000 abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 5
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 4
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 40
- 239000007789 gas Substances 0.000 description 30
- 238000000231 atomic layer deposition Methods 0.000 description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 17
- 238000010926 purge Methods 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 230000001590 oxidative effect Effects 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 239000012071 phase Substances 0.000 description 8
- GQHTUMJGOHRCHB-UHFFFAOYSA-N 2,3,4,6,7,8,9,10-octahydropyrimido[1,2-a]azepine Chemical compound C1CCCCN2CCCN=C21 GQHTUMJGOHRCHB-UHFFFAOYSA-N 0.000 description 7
- 239000006227 byproduct Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- VHYFNPMBLIVWCW-UHFFFAOYSA-N 4-Dimethylaminopyridine Chemical compound CN(C)C1=CC=NC=C1 VHYFNPMBLIVWCW-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000002411 thermogravimetry Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000005019 vapor deposition process Methods 0.000 description 4
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 239000000706 filtrate Substances 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000006557 surface reaction Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- SGUVLZREKBPKCE-UHFFFAOYSA-N 1,5-diazabicyclo[4.3.0]-non-5-ene Chemical compound C1CCN=C2CCCN21 SGUVLZREKBPKCE-UHFFFAOYSA-N 0.000 description 2
- FVKFHMNJTHKMRX-UHFFFAOYSA-N 3,4,6,7,8,9-hexahydro-2H-pyrimido[1,2-a]pyrimidine Chemical compound C1CCN2CCCNC2=N1 FVKFHMNJTHKMRX-UHFFFAOYSA-N 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- 229910007161 Si(CH3)3 Inorganic materials 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- UHOVQNZJYSORNB-MZWXYZOWSA-N benzene-d6 Chemical compound [2H]C1=C([2H])C([2H])=C([2H])C([2H])=C1[2H] UHOVQNZJYSORNB-MZWXYZOWSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 239000012043 crude product Substances 0.000 description 2
- 238000000113 differential scanning calorimetry Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical group C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 description 2
- 238000004508 fractional distillation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- MUQNAPSBHXFMHT-UHFFFAOYSA-N tert-butylhydrazine Chemical compound CC(C)(C)NN MUQNAPSBHXFMHT-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- KYVBNYUBXIEUFW-UHFFFAOYSA-N 1,1,3,3-tetramethylguanidine Chemical compound CN(C)C(=N)N(C)C KYVBNYUBXIEUFW-UHFFFAOYSA-N 0.000 description 1
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- 238000005160 1H NMR spectroscopy Methods 0.000 description 1
- 229960000549 4-dimethylaminophenol Drugs 0.000 description 1
- WKYWHPWEQYJUAT-UHFFFAOYSA-N 7-[3-(aminomethyl)-4-propoxyphenyl]-4-methylquinolin-2-amine Chemical compound CCCOC1=C(C=C(C=C1)C2=CC3=C(C=C2)C(=CC(=N3)N)C)CN WKYWHPWEQYJUAT-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PDPXHRBRYUQCQA-SFOWXEAESA-N [(1s)-1-fluoro-2-(hydroxyamino)-2-oxoethyl]phosphonic acid Chemical compound ONC(=O)[C@@H](F)P(O)(O)=O PDPXHRBRYUQCQA-SFOWXEAESA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000000304 alkynyl group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000012707 chemical precursor Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000011365 complex material Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000000582 cycloheptyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000000640 cyclooctyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000000769 gas chromatography-flame ionisation detection Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001072 heteroaryl group Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 239000012263 liquid product Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- HDZGCSFEDULWCS-UHFFFAOYSA-N monomethylhydrazine Chemical compound CNN HDZGCSFEDULWCS-UHFFFAOYSA-N 0.000 description 1
- UZBJFTKEFSQIFU-UHFFFAOYSA-N n'-trimethylsilylethane-1,2-diamine Chemical compound C[Si](C)(C)NCCN UZBJFTKEFSQIFU-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000000269 nucleophilic effect Effects 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000003880 polar aprotic solvent Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000012713 reactive precursor Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 238000000526 short-path distillation Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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Abstract
本发明提供可用作将含硅材料气相沉积于微电子装置表面上的前体的某些硅基胺化合物。此类前体可与任选的共反应物一起使用以沉积含硅膜,诸如氮化硅、氧化硅、氧氮化硅、氧碳氮化硅(SiOCN)、碳氮化硅(SiCN)及碳化硅。
Description
技术领域
本发明大体上涉及可用于将含硅膜气相沉积于微电子装置上的某些硅前体化合物。
背景技术
硅基薄膜的低温沉积对于目前半导体装置制造及工艺具有根本重要性。过去几十年来,二氧化硅薄膜用作集成电路(IC)(包括微处理器、逻辑及内存基装置)的必需结构部件。二氧化硅一直是半导体工业中的主要材料且已作为绝缘电介质材料用于实质上全部的已经商业化的硅基装置。多年来,二氧化硅用互连电介质材料、电容器与栅极电介质材料。
用于沉积高纯度SiO2膜的常规工业方法一直是使用四乙基原硅酸盐(TEOS)作为用于气相沉积此类膜的薄膜前体。TEOS为一种稳定液体材料,其已用作化学气相沉积(CVD)、等离子体增强化学气相沉积(PECVD)及原子层沉积(ALD)中的硅源试剂,以实现高纯度SiO2薄膜。其它薄膜沉积方法(例如,聚焦离子束、电子束及用于形成薄膜的其它能量方式)还可使用此种硅源试剂来进行。
随着集成电路装置尺寸持续减小,在微影缩放方法及装置几何形状缩小的相应进步下,正相应地寻求用于形成高完整性SiO2薄膜的新颖沉积材料及工艺。期望改进的硅基前体(及共反应物)形成SiO2膜以及其它含硅薄膜,例如Si3N4、SiC及掺杂SiOx高k薄膜,其可在低温(如低于400℃及低于200℃的温度)下沉积。为了实现这些低沉积温度,要求化学前体清洁分解来产生期望膜。
低温膜的实现还要求使用及开发确保形成均质共形含硅膜的沉积工艺。化学气相沉积(CVD)及原子层沉积(ALD)工艺因此正在细化且实施,同时持续性寻找在处置、蒸发及输送到反应器方面稳定但呈现在低温下清洁分解以形成期望薄膜的能力的反应性前体化合物。此项努力的根本挑战是实现前体热稳定性与前体针对高纯度、低温膜生长工艺的适合性的平衡,同时维持由此制备的膜的期望电子性质及机械性质。
发明内容
本发明提供某些硅基胺化合物,可认为其可用为将含硅膜沉积于微电子装置衬底上的前体。特别地,本发明提供一种气相沉积方法,其使用式(I)化合物:
其中R1、R2及R3各独立地选自氢、C1-C10烷基、C3-C8环烷基、芳基及苄基且n为0、1或2。
在此沉积方法中,示例性式(I)化合物包括三甲基硅基乙撑三胺及三甲基硅基乙二胺。
附图说明
图1为三甲基硅基二乙撑三胺(即式(I)化合物,其中R1、R2及R3中的每一者为甲基)的1H NMR。
图2为三甲基硅基二乙撑三胺的差示扫描量热法(DSC)。
图3为三甲基硅基二乙撑三胺的热重分析(TGA)。此数据显示良好热稳定性、高挥发性及零残余物。在此图中,T50为在50%重量损失下的温度;测得的T50为156.84℃。
具体实施方式
如本说明书及随附权利要求书中所用,除非本文清晰地另作指明,否则单数形式“一”、“一个”及“所述”包括多个指示物。如本说明书及随附权利要求书中所用,除非本文清晰地另作指明,否则术语“或”一般在其包括“及/或”的意义上使用。
术语“约”一般是指被认为等同于所列举值(例如,具有相同功能或结果)的一系列数值。在许多情况下,术语“约”可包括四舍五入到最接近有效数字的数值。
使用端点表示的数值范围包括包含在所述范围内的所有数值(例如1到5包括1、1.5、2、2.75、3、3.80、4及5)。
在第一方面,本发明提供式(I)化合物:
其中R1、R2及R3各独立地选自氢、C1-C10烷基、C3-C8环烷基、芳基及苄基且n为0、1或2,限制条件为当n为1时,所述式(I)化合物不为三甲基硅基乙撑三胺。
在n=0的情况下,所述式(I)化合物将为如下:
在n=1的情况下,所述式(I)化合物将为如下:
所述式(I)化合物可通过使式(A)化合物:
其中X为卤素,
与式(B)化合物,
在碱存在下接触来制备。
在上述工艺中,X可选自氯、溴、碘或氟。
如本文所用,术语“C1-C10烷基”是指具有一到十个碳原子的脂族烃基。示例性基团包括甲基、乙基、正丙基、异丙基、正丁基、叔丁基、仲丁基、戊基、己基、庚基、辛基、壬基、癸基等。
如本文所用,术语“C3-C8环烷基”是指具有三个到十个碳原子的环脂族基且包括诸如环丙基、环丁基、环戊基、环己基、环庚基及环辛基等基团。
如本文所用,术语“芳基”是指仅由碳及氢组成的芳族环。示例性基团包括苯基、联苯基、萘基等。
可用于此工艺中的碱包括足够强使式(B)化合物上的氨基去质子化以实现式(A)化合物(即通常作为非亲核碱用于有机合成中的化合物)上的卤素原子置换的那些碱。就此而言,示例性碱包括三乙胺、吡咯烷、四甲基胍、1,4-二氮杂双环[2.2.2]辛烷(DABCO)、1,5-二氮杂双环[4.3.0]壬-5-烯(CAS号3001-72-7,也称为“DBN”)、4-二甲氨基吡啶(CAS号1122-58-3,也称为“DMAP”)、1,5,7-三氮杂双环[4.4.0]癸-5-烯(CAS号5807-14-7,也称为“TBD”)及1,8-二氮杂双环[5.4.0]十一-7-烯(CAS号6674-22-2,也称为“DBU”)。
所述工艺可使用不会干扰所述反应的适合的极性非质子溶剂(如四氢呋喃、乙醚、甲苯或二氯甲烷)来进行。一般来说,将含硅化合物(A)与如本文所述的碱组合且然后例如在室温下将胺化合物(B)添加到反应混合物中。一旦反应完成,可经由过滤移除固体副产物且通过分馏纯化剩余滤液以形成无色液体产物(I)。
可认为,式(I)化合物可用作含硅膜且特别是微电子装置的表面上的膜的气相沉积中的前体。在某些实施例中,所述膜还含有氮及/或氧及/或碳。
如本文所用,术语“含硅膜”是指膜,如二氧化硅、氮化硅、氮氧化硅、碳化硅、碳氮化硅、氧碳氮化硅、低-k薄含硅膜、高-k栅极硅酸盐膜及低温硅外延膜。
因此,上述式(I)化合物可用于通过任何适合的气相沉积技术,如化学气相沉积(CVD)、数位(脉冲)CVD、原子层沉积(ALD)、脉冲等离子体工艺、等离子体增强循环化学气相沉积(PECCVD)、可流动式化学气相沉积(FCVD)或等离子体增强类ALD工艺来形成高纯度薄含硅膜。在某些实施例中,此类气相沉积工艺可用于形成含硅膜于微电子装置上以形成具有约20埃到约2000埃的厚度的膜。
图1为三甲基硅基二乙撑三胺(即式(I)化合物,其中R1、R2及R3中的每一者为甲基)的1H NMR。
图2为三甲基硅基二乙撑三胺的差示扫描量热法(DSC)。
图3为三甲基硅基二乙撑三胺的热重分析(TGA)。此数据显示良好热稳定性、高挥发性及零残余物。在此图中,T50为在50%重量损失下的温度;测得的T50为156.84℃。
在本发明的方法中,可使上述化合物与期望微电子装置衬底以任何适合的方式例如在单晶片CVD、ALD及/或PECVD或PEALD腔室(即“反应区”)中或在装纳多个晶片的炉中反应。
或者,本发明方法可作为ALD或类ALD工艺进行。如本文所用,术语“ALD或类ALD”是指如以下工艺(i)将各反应物(包括式(I)的硅前体化合物及氧化或还原气体)连续地引入到反应器(如单晶片ALD反应器、半批式ALD反应器或批式炉ALD反应器)中、或(ii)通过移动或旋转衬底到反应器的不同区段将各反应物(包括式(I)的硅前体化合物及氧化或还原气体)暴露到衬底或微电子装置表面且各区段通过惰性气体幕(即空间ALD反应器或辊对辊(roll to roll)ALD反应器)分开。
在一个实施例中,气相沉积条件包括约室温(例如约23℃)到约1000℃、或约100℃到约1000℃、或约450℃到约1000℃的温度、及约0.5到约1000托的压力。在另一个实施例中,气相沉积条件包括约100℃到约800℃、或约500℃到约750℃的温度。
一般来说,使用式(I)的前体化合物制造的期望膜可通过选择各化合物,结合使用还原或氧化共反应物来定制。参见,例如,以下方案1,其说明式(I)前体可如何用于气相沉积工艺中:
方案1
在一个实施例中,气相沉积工艺可进一步包括涉及将前体暴露到气体(如H2、H2等离子体、H2/O2混合物、水、N2O、N2O等离子体、NH3、NH3等离子体、N2或N2等离子体)的步骤。例如,可使用氧化气体,如O2、O3、N2O、水蒸气、醇或氧气等离子体。在一个实施例中,式(I)前体用于以O3作为氧化气体的ALD工艺中。在某些实施例中,所述氧化气体进一步包含惰性气体,如氩气、氦气、氮气或其组合。在另一个实施例中,所述氧化气体进一步包含氮气,其可与式(I)前体在等离子体条件下反应以形成氮氧化硅膜。
因此,在另一个方面,本发明提供一种用于沉积含硅膜于微电子装置衬底上的方法,其包括在反应区中使衬底与式(I)化合物在气相沉积条件下接触:
其中R1、R2及R3各独立地选自氢、C1-C10烷基、C3-C8环烷基、芳基及苄基且n为0、1或2。
在某些实施例中,所述方面的方法将包括使用一种或多种选自氧化气体、还原气体及烃的共反应物。
在另一个实施例中,上述气相沉积方法可进一步包括涉及将膜暴露到还原气体的步骤。在本发明的某些实施例中,所述还原气体由选自H2、肼(N2H4)、甲基肼、叔丁基肼、1,1-二甲基肼、1,2-二甲基肼及NH3的气体组成。在此类含氮还原气体的情况下,可使用气相沉积技术(如原子层沉积)来形成包含硅及氮的材料。
可认为,式(I)化合物能够进行含硅膜的低温PECVD及/或PEALD形成、以及高温ALD。此类化合物呈现高挥发性及化学反应性但在就在涉及前体的挥发或蒸发的温度下的热降解方面是稳定的,允许将所得前体蒸气一致且可重复地输送到沉积区或反应腔室。
在使用式(I)前体化合物时,可通过使用共反应物(如呈例如甲烷、乙烷、乙烯或乙炔的形式的碳)来实现将碳并入到此类膜中,以进一步引入碳内容物到含硅膜中,由此产生碳化硅。
本文所公开的沉积方法可涉及一种或多种吹扫气体及/或载气。吹扫气体用于吹扫除去未消耗的反应物及/或反应副产物,且为不与前体反应的惰性气体。示例性吹扫气体包括(但不限于)氩气、氮气、氦气、氖气、氢气及其混合物。在某些实施例中,吹扫气体(如Ar)以在约10sccm到约2000sccm的范围内的流速供应到反应器中约0.1秒到1000秒,由此吹扫可留在反应器中的未反应的材料及任何副产物。
可通过改变供应硅前体化合物、氧化气体、还原气体、及/或其它前体、源气体、及/或反应物的顺序及/或改变所得电介质膜的化学计量组成来进行供应其的各个步骤。
施加能量到式(I)硅前体化合物及氧化气体、还原气体或其组合中的至少一者以诱导反应及形成含硅膜于微电子装置衬底上。此种能量可由(但不限于)热、脉冲热、等离子体、脉冲等离子体、螺旋等离子体(helicon plasma)、高密度等离子体、感应耦合等离子体、X射线、电子束(e-beam)、光子、远程等离子体方法及其组合提供。在某些实施例中,可使用二级RF频源以修改衬底表面处的等离子体特性。在其中沉积涉及等离子体的实施例中,产生等离子体的方法可包括直接产生等离子体方法,其中等离子体直接产生于反应器中、或替代地,远程产生等离子体方法,其中等离子体在反应区及衬底的“远侧”产生,被供应到反应器中。
如本文所用,术语“微电子装置”对应于半导体衬底,包括3D NAND结构、平板显示器及微机电系统(MEMS),其被制造用于微电子、集成电路或计算机芯片应用中。应理解,术语“微电子装置”并非打算以任何方式进行限制且包括任何衬底,其包括负通道金属氧化物半导体(nMOS)及/或正通道金属氧化物半导体(pMOS)晶体管且将最终成为微电子装置或微电子组合件。此类微电子装置包含至少一个衬底,其可选自例如硅、SiO2、Si3N4、OSG、FSG、碳化硅、氢化碳化硅、氮化硅、氢化氮化硅、碳氮化硅、氢化碳氮化硅、硼氮化物、抗反射涂层、光刻胶、锗、含锗物、含硼酸、Ga/As、柔性衬底、多孔无机材料、金属(如铜及铝)及扩散阻挡层(如(但不限于)TiN、Ti(C)N、TaN、Ta(C)N、Ta、W或WN)。所述膜与多种后续加工步骤(如(例如)化学机械平坦化(CMP)及各向异性蚀刻工艺)相容。
在原子层沉积中,连续加工步骤一般称为“脉冲”或循环。因此,ALD工艺以前体化学品的受控、自限制性表面反应为基础。通过交替及连续地使衬底与前体接触来避免气相反应。及时地且在衬底表面上将气相反应物彼此分离,例如,通过从位于反应物脉冲之间的反应腔室移除过量反应物及/或反应物副产物。在一些实施例中,一个或多个衬底表面交替地且连续地与两个或更多个气相前体或反应物接触。使衬底表面与气相反应物接触意味着在反应区中使反应物蒸气与衬底表面接触一段有限时间期。换句话说,可理解,将衬底表面暴露到各气相反应物一段有限时间期。
在某些实施例中,以上所描绘的前体化合物的脉冲时间(即前体暴露到衬底的持续时间)在约1秒到30秒的范围内。当使用吹扫步骤时,持续时间为约1秒到20秒或1秒到30秒。在其它实施例中,共反应物的脉冲时间在5秒到60秒的范围内。
举例而言,在原子层沉积(ALD)的情况下,所述式(I)化合物可用作一种“硅”前体,且在期望氮化硅膜的情况下,可使用含氮材料作为共反应物或作为另一个前体。所述含氮材料可为有机(例如叔丁基肼)或无机(例如NH3)。在某些实施例中,ALD可用于形成包含硅及氮的材料。根据在特定情况下所选择的共反应物,此种材料可包含氮化硅、基本上由氮化硅组成、或由氮化硅组成,及/或可具有其它组分。
简单而言,可一般在例如约0.5托到50托的压力下将包括至少一个表面的衬底加热到例如在150℃到700℃的范围内的适合的沉积温度。在其它实施例中,所述温度为约200℃到300℃或500℃到650℃。沉积温度一般维持于低于反应物的热分解温度但处于高到足以避免反应物的缩合且为期望“选择性”表面反应提供活化能量的温度。
使衬底的表面与气相第一反应物接触。在某些实施例中,将气相第一反应物的脉冲提供到装纳衬底的反应区。在其它实施例中,将所述衬底移动到含有气相第一反应物的反应空间。条件一般选择成使得不大于约一个单层的第一反应物以自限制性方式吸附在衬底表面上。适合的接触时间可由熟练技术者以特定条件、衬底及反应器结构为基础而容易地确定。从衬底表面移除过量第一反应物及反应副产物(若有的话),如通过用惰性气体吹扫或通过从第一反应物的存在下移走衬底。吹扫意味着从衬底表面移除气相前体及/或气相副产物,如通过用真空泵将腔室抽真空及/或通过以惰性气体(如氩气或氮气)置换反应器内部的气体。在某些实施例中,吹扫时间为约0.05秒到20秒、约1秒到10秒、或约1秒到2秒。然而,若需要,则可使用其它吹扫时间,如在需要于极端高纵横比结构或具有复杂表面形态的其它结构上的高度共形步骤覆盖率的情况下。
然后可使衬底的表面与气相第二气态反应物(即第二前体或共反应物(如氧化或还原气体))接触。在某些实施例中,将第二气态反应物的脉冲提供到装纳衬底的反应空间。在其它实施例中,将衬底移动到装纳气相第二反应物的反应空间。从衬底表面移除表面反应的过量第二反应物及气态副产物(若有的话)。重复接触及移除的步骤直到期望厚度的薄膜已选择性形成于衬底的第一表面上,其中每个循环留下一般不大于约一个分子单层。可包括使衬底的表面与其它反应物交替地且连续地接触的另外相以形成更复杂的材料(如三元材料(ternary materials))。
每个循环的每个阶段一般为自限制性。在每个阶段中供应过量反应物前体以使易感结构表面饱和。表面饱和确保所有可用反应性位点的反应物占用(个体,例如,到物理尺寸或“空间位阻”抑制)且因此确保极佳步骤覆盖。通常,每个循环沉积少于一个材料分子层,然而,在一些实施例中,在循环期间沉积一个以上分子层。
移除过量反应物可包括将反应区的一些内容物抽真空及/或用氦气、氮气或另一惰性气体吹扫反应区。在某些实施例中,吹扫可包括关闭反应性气体流同时继续使惰性载气流到反应空间。在另一个实施例中,所述吹扫步骤可采用真空步骤以从表面移除过量反应物。
能够用于生长此类薄膜的反应器可用于本文所述的沉积。此类反应器包括ALD反应器、以及配备适合的设备及构件以“脉冲”方式提供前体的CVD反应器。根据某些实施例,可使用莲蓬头反应器。可使用的适合的反应器的实例包括市售设备、以及自建(home-built)反应器,且将为CVD及/或ALD领域技术人员已知。
示例性式(I)化合物包括那些例示于下表中者:
实例
实例1--三甲基硅基乙撑三胺
在室温下,在氮气氛围下搅拌含在乙醚(500 mL)中的一氯三甲基硅烷(50.0 g,0.41mol)及双环脒碱(DBU)(63.06 g,0.41 mol)的混合物一小时。将二乙撑三胺(14.24 g,0.14mol)添加到此反应混合物且搅拌12小时。在搅拌12小时后,过滤除去在反应期间获得的白色沉淀且收集滤液。透过注射器过滤器(0.45μm)进一步过滤滤液。在过滤后,通过分馏纯化粗产物以产生呈无色液体的标题产物(53.5%产率)。在0.8托下使用短程蒸馏来真空蒸馏所述粗产物。丢弃40℃到60℃的前餾分且收集在92℃下沸腾的主餾分。所述主餾分中无色油的质量(通过GC-FID,99.3%)为160 g(55%产率)。1H NMR(C6D6):δ2.70(br,8H,CH2);0.33(br,2H,NH);0.13(s,9H,Si(CH3)3);0.11(s,18H,Si(CH3)3)ppm。
方面
在第一方面,本发明提供式(I)化合物:
其中R1、R2及R3各独立地选自氢、C1-C10烷基、C3-C8环烷基、芳基及苄基且n为0、1或2,限制条件为当n为1时,所述式(I)化合物不为三甲基硅基乙撑三胺。
在第二方面,本发明提供第一方面,其中n为0。
在第三方面,本发明提供第一方面,其中n为1。
在第四方面,本发明提供第一方面、第二方面或第三方面,其中R1、R2及R3中的每一者选自甲基、乙基、正丙基、异丙基、正丁基、仲丁基及叔丁基。
在第五方面,本发明提供第一方面到第四方面中的任一方面,其中R1、R2及R3中的每一者为甲基。
在第六方面,本发明提供第一方面到第四方面中的任一方面,其中R1、R2及R3中的每一者为氢。
在第七方面,本发明提供根据权利要求1所述的化合物,其具有下式
在第八方面,本发明提供一种用于沉积含硅膜于微电子装置衬底上的方法,其包括在反应区中在气相沉积条件下使所述衬底与式(I)化合物接触:
其中R1、R2及R3各独立地选自氢、C1-C10烷基、C3-C10环烷基、C3-C10烯基、C3-C10炔基、芳基及杂芳基,且n为0、1或2。
在第九方面,本发明提供根据第八方面的方法,其中n为0。
在第十方面,本发明提供根据第八方面的方法,其中n为1。
在第十一方面,本发明提供根据第八方面、第九方面或第十方面的方法,其中R1、R2及R3中的每一者选自甲基、乙基、正丙基、异丙基、正丁基、仲丁基及叔丁基。
在第十二方面,本发明提供根据第八方面到第十一方面中任一方面的方法,其中R1、R2及R3中的每一者为甲基。
在第十三方面,本发明提供根据第八方面到第十一方面中任一方面的方法,其中R1、R2及R3中的每一者为氢。
在第十四方面,本发明提供根据第八方面到第十一方面中任一方面的方法,其中所述式(I)化合物为
在第十五方面,本发明提供根据第八方面到第十一方面中任一方面的方法,其中所述式(I)化合物为
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在第十六方面,本发明提供一种用于制备式(I)化合物的方法:
其中R1、R2及R3各独立地选自氢、C1-C10烷基、C3-C8环烷基、芳基及苄基且n为0、1或2;
所述方法包括使式(A)化合物:
其中X为卤素,
与式(B)化合物,
在碱存在下接触。
在第十七方面,本发明提供根据第十六方面的方法,其中n为0。
在第十七方面,本发明提供根据第十六方面的方法,其中n为1。
在第十九方面,本发明提供根据第十六方面的方法,其中所述式(I)化合物具有下式:
在第二十方面,本发明提供根据第十六方面的方法,其中所述式(I)化合物具有下式:
因此已描述本发明的若干例示性实施例,本领域技术人员将容易地明了,可在随附本发明的权利要求书的范围内制作及使用还有其它实施例。已在前述描述中阐述本文件所涵盖的本发明的许多优点。然而,应理解,本发明在许多方面中仅为例示性。本发明的范围当然用其中表述随附权利要求书的语言限定。
Claims (20)
1.一种式(I)化合物,
其中R1、R2及R3各独立地选自氢、C1-C10烷基、C3-C8环烷基、芳基及苄基且n为0、1或2,限制条件为当n为1时,所述式(I)化合物不为三甲基硅基乙撑三胺。
2.根据权利要求1所述的化合物,其中n为0。
3.根据权利要求1所述的化合物,其中n为1。
4.根据权利要求1所述的化合物,其中R1、R2及R3中的每一者选自甲基、乙基、正丙基、异丙基、正丁基、仲丁基及叔丁基。
5.根据权利要求1所述的化合物,其中R1、R2及R3中的每一者为甲基。
6.根据权利要求1所述的化合物,其中R1、R2及R3中的每一者为氢。
7.根据权利要求1所述的化合物,其具有下式:
8.一种用于沉积含硅膜于微电子装置衬底上的方法,其包括在反应区中使所述衬底与式(I)化合物在气相沉积条件下接触:
其中R1、R2及R3各独立地选自氢、C1-C10烷基、C3-C8环烷基、芳基及苄基且n为0、1或2。
9.根据权利要求8所述的方法,其中n为0。
10.根据权利要求8所述的方法,其中n为1。
11.根据权利要求8所述的方法,其中R1、R2及R3中的每一者选自甲基、乙基、正丙基、异丙基、正丁基、仲丁基及叔丁基。
12.根据权利要求8所述的方法,其中R1、R2及R3中的每一者为甲基。
13.根据权利要求8所述的方法,其中R1、R2及R3中的每一者为氢。
14.根据权利要求8所述的方法,其中所述式(I)化合物为
15.根据权利要求8所述的方法,其中所述式(I)化合物为
16.一种用于制备式(I)化合物的方法,
其中R1、R2及R3各独立地选自氢、C1-C10烷基、C3-C8环烷基、芳基及苄基且n为0、1或2;
所述方法包括使式(A)化合物:
其中X为卤素,
与式(B)化合物:
在碱存在下接触。
17.根据权利要求16所述的方法,其中n为0。
18.根据权利要求16所述的方法,其中n为1。
19.根据权利要求16所述的方法,其中所述式(I)化合物具有下式:
20.根据权利要求16所述的方法,其中所述式(I)化合物具有下式:
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US (1) | US20230088079A1 (zh) |
KR (1) | KR20240050393A (zh) |
CN (1) | CN117940440A (zh) |
TW (1) | TW202311273A (zh) |
WO (1) | WO2023027816A1 (zh) |
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US7875556B2 (en) * | 2005-05-16 | 2011-01-25 | Air Products And Chemicals, Inc. | Precursors for CVD silicon carbo-nitride and silicon nitride films |
JP2011089186A (ja) * | 2009-10-26 | 2011-05-06 | Tosoh Corp | 炭窒化ケイ素含有膜、その製法、及びその用途 |
US10453675B2 (en) * | 2013-09-20 | 2019-10-22 | Versum Materials Us, Llc | Organoaminosilane precursors and methods for depositing films comprising same |
CN111303205A (zh) * | 2020-03-31 | 2020-06-19 | 苏州欣溪源新材料科技有限公司 | 双核钽配合物及其制备方法 |
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- 2022-07-08 US US17/860,177 patent/US20230088079A1/en active Pending
- 2022-07-08 CN CN202280061835.0A patent/CN117940440A/zh active Pending
- 2022-07-08 WO PCT/US2022/036438 patent/WO2023027816A1/en active Application Filing
- 2022-07-08 KR KR1020247009286A patent/KR20240050393A/ko active Search and Examination
- 2022-07-21 TW TW111127311A patent/TW202311273A/zh unknown
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WO2023027816A1 (en) | 2023-03-02 |
KR20240050393A (ko) | 2024-04-18 |
US20230088079A1 (en) | 2023-03-23 |
TW202311273A (zh) | 2023-03-16 |
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