CN117594438B - Manganese doping method of fast recovery diode and fast recovery diode - Google Patents
Manganese doping method of fast recovery diode and fast recovery diode Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 57
- 238000011084 recovery Methods 0.000 title claims abstract description 48
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 229910052748 manganese Inorganic materials 0.000 title claims abstract description 28
- 239000011572 manganese Substances 0.000 title claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 229910001437 manganese ion Inorganic materials 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 17
- 238000000137 annealing Methods 0.000 claims abstract description 15
- 230000000873 masking effect Effects 0.000 claims abstract description 15
- 229920005591 polysilicon Polymers 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 230000003647 oxidation Effects 0.000 claims abstract description 12
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 229910052796 boron Inorganic materials 0.000 claims abstract description 9
- 238000001259 photo etching Methods 0.000 claims abstract description 9
- -1 boron ions Chemical class 0.000 claims abstract description 8
- 238000002161 passivation Methods 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 6
- 239000004642 Polyimide Substances 0.000 claims abstract description 5
- 229920001721 polyimide Polymers 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 238000002347 injection Methods 0.000 claims abstract description 4
- 239000007924 injection Substances 0.000 claims abstract description 4
- 238000002513 implantation Methods 0.000 claims description 11
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 239000012535 impurity Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- 230000006798 recombination Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000000969 carrier Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Abstract
The invention relates to the technical field of semiconductor devices, and provides a manganese doping method of a fast recovery diode and the fast recovery diode, wherein the method comprises the following steps: s1, obtaining an N-type heavily doped silicon substrate; s2, growing an N-type lightly doped epitaxial layer on the N-type heavily doped silicon substrate; s3, growing an oxidation masking layer on the N-type lightly doped epitaxial layer; forming a window on the oxidation masking layer through photoetching and etching processes, injecting boron ions, and forming a main junction and a field limiting ring after annealing; s4, depositing a polysilicon layer on the product obtained in the step S3, and obtaining a polysilicon field plate through photoetching; s5, after the back surface of the N-type heavily doped silicon substrate is thinned, implanting manganese ions from the back surface and annealing; s6, depositing metal electrodes on the front and back sides of the product obtained in the step S5; wherein the front metal electrode is positioned on the top of the main junction; s7, coating polyimide on the product obtained in the step S6 to form a passivation layer. The invention adopts manganese doping to reduce the reverse recovery time, and simultaneously the problem of large leakage current can be avoided by injection after the back surface is thinned.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a manganese doping method of a fast recovery diode and the fast recovery diode.
Background
In recent years, with rapid development in the fields of power electronics, automotive electronics, etc., the demand of power devices such as fast recovery diodes (FRDs, fast Recovery Diode) in the domestic and foreign markets is increasing, and at the same time, higher requirements are being put on the quality of the devices, and the devices need to have faster switching speeds, higher withstand voltages, and more stable reliability. In order to meet market demands, high-performance power devices are focused on, and fast recovery diodes have the advantages of short reverse recovery time, high reverse breakdown voltage, low forward voltage drop and the like, and are widely used as high-frequency rectifier diodes and flywheel diodes in electronic devices such as high-frequency converters, pulse width modulators, high-efficiency switching power supplies and the like.
Fast recovery diodes typically have a P-I-N structure formed by adding a lightly doped region between the P-type and N-type semiconductors. When a forward voltage is applied to the anode, holes injected from the P region store charges in the I region in the form of minority carriers, and the minority carrier injection causes the I region to generate a conductivity modulation effect, so that the device is turned on; when the applied voltage suddenly changes from the forward voltage to the reverse voltage, a large number of minority carriers are still stored in the I region, and the minority carriers need to be extracted or recombined for the device to be turned off, so that a process is required for the device to change from the forward on state to the reverse off state, and the time required for the process is defined as the reverse recovery time (T rr). Reverse recovery time is one of the core indexes of the fast recovery diode, and determines the switching speed and high-frequency characteristics of the device.
At present, the technology of gold expansion, platinum expansion and the like is generally adopted in the industry to introduce deep-level impurities as a recombination center so as to reduce the minority carrier lifetime of an I region, thereby reducing the reverse recovery time. Although the recovery speed of the device can be improved by doping heavy metal impurities such as gold, platinum and the like, the problems of increased reverse leakage current, poor high-temperature characteristics and the like are caused; meanwhile, due to the fact that gold, platinum and other elements are relatively large in molecular mass, doping is generally achieved through a high-temperature diffusion process after front sputtering, however, accurate control of doping depth and concentration is difficult to achieve, and problems of poor device consistency, surface contamination and the like are easily caused. These problems severely limit the product performance of the current fast recovery diode, and new doping elements and doping processes are needed to further improve the production quality and the production efficiency of the fast recovery diode.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a manganese doping method of a fast recovery diode and the fast recovery diode, so as to solve the problem that the conventional fast recovery diode cannot accurately control doping depth and concentration and the uniformity of devices is poor due to the fact that gold, platinum and other elements are doped on the front surface of the fast recovery diode.
In a first aspect, the present invention provides a method for doping manganese in a fast recovery diode, including:
S1, obtaining an N-type heavily doped silicon substrate;
S2, growing an N-type lightly doped epitaxial layer on the N-type heavily doped silicon substrate;
S3, growing an oxidation masking layer on the N-type lightly doped epitaxial layer; forming a window on the oxidation masking layer through photoetching and etching processes, injecting boron ions, and forming a main junction and a field limiting ring after annealing;
S4, depositing a polysilicon layer on the product obtained in the step S3, and obtaining a polysilicon field plate through photoetching;
S5, after the back surface of the N-type heavily doped silicon substrate is thinned, implanting manganese ions from the back surface and annealing;
S6, depositing metal electrodes on the front and back sides of the product obtained in the step S5; wherein a front metal electrode is located on top of the main junction;
S7, coating polyimide on the product obtained in the step S6 to form a passivation layer.
According to the technical scheme, the manganese doping method of the fast recovery diode provided by the invention has the advantages that the service life of a current carrier can be effectively reduced, the reverse recovery time is shortened and the performance of the fast recovery diode is improved on the basis of doping deep-level impurity manganese as a composite center; meanwhile, the back doping can avoid the influence on a junction terminal during front doping, the problems of large leakage current and poor high-temperature characteristics are avoided, deep-level impurities are doped after thinning, and manganese ions can enter a drift region more quickly to play a role of a composite center.
Optionally, the resistivity of the N-type heavily doped silicon substrate is 5+/-3%The thickness is 50-150 mu m, and the doping concentration is 1 multiplied by 10 18~1×1024cm-3; the thickness of the N-type lightly doped epitaxial layer is 20-120 mu m, and the doping concentration is 1 multiplied by 10 12~1×1014cm-3.
Optionally, the thickness of the oxidation masking layer is 12000-25000 a.
Optionally, in the step S3, the doping concentration of the boron ions is 1×10 13~1×1016cm-3, and the junction depth after annealing is 5-15 μm.
Optionally, in step S4, a polycrystalline silicon layer is formed by LPCVD process deposition, siH 4 is introduced into a reaction furnace, the temperature is 600-700 ℃, and the thickness of the formed polycrystalline silicon layer is 1000-5000A.
Optionally, in step S5, the thickness of the N-type heavily doped silicon substrate removed after the back surface is thinned is 40-80 μm. The doped manganese ions can enter the drift region faster by implanting the manganese ions after the back surface is thinned, and meanwhile, the excessively low withstand voltage cannot be caused.
Optionally, in the step S5, the implantation energy of the manganese ions is 200-1000 kev, the implantation angle is 7 °, and the doping concentration is 1×10 8~1×1010cm-3; and annealing at 900-1100 ℃ for 15-30 min after the injection is completed.
In a second aspect, the present invention provides a fast recovery diode prepared by the method of doping manganese according to any one of the possible implementation manners of the first aspect.
By adopting the technical scheme, the application has the following beneficial effects:
(1) According to the invention, manganese ions are introduced as a recombination center, so that the recombination of electrons and holes can be effectively promoted, the service life of carriers is greatly reduced, and the reverse recovery time is shortened;
(2) The effect of front doping on a junction terminal can be avoided, the problem of large leakage current is avoided, deep-level impurities are doped after thinning, and manganese ions can enter a drift region more quickly to play a role of a composite center;
(3) The doping concentration and depth of the deep energy level impurities can be controlled more accurately by the ion implantation process, the consistency and stability of the device are improved, and the production yield is improved;
(4) The manganese-expanding process is selected to reduce the production cost compared with the gold-expanding and platinum-expanding processes.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. Like elements or portions are generally identified by like reference numerals throughout the several figures. In the drawings, elements or portions thereof are not necessarily drawn to scale.
Fig. 1 shows a flowchart of a manganese doping method of a fast recovery diode according to an embodiment of the present invention;
Fig. 2 is a schematic diagram of an article obtained in step S2 of the manganese doping method of the fast recovery diode according to the embodiment of the present invention;
fig. 3 is a schematic diagram showing a manganese doping method step S3 of an oxidation masking layer of a fast recovery diode according to an embodiment of the present invention;
Fig. 4 is a schematic diagram showing a main junction and a field limiting ring of a manganese doping method step S3 of a fast recovery diode according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of an article obtained in step S4 of the method for doping manganese in a fast recovery diode according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of an article obtained in step S5 of the method for doping manganese in a fast recovery diode according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of an article obtained in step S6 of the method for doping manganese in a fast recovery diode according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of an article obtained in step S7 of the method for doping manganese in a fast recovery diode according to an embodiment of the present invention;
Fig. 9 shows a graph comparing the effect of the manganese-expanding process with the gold-expanding and platinum-expanding process at the reverse recovery time.
Reference numerals:
A 101-N type heavily doped silicon substrate; 102-N type lightly doped epitaxial layer; 103-oxidizing the masking layer; 104-main junction; 105-field limiting rings; 106-a polysilicon field plate; 107-manganese ions; 108-a metal electrode; 109-passivation layer.
Detailed Description
Embodiments of the technical scheme of the present invention will be described in detail below with reference to the accompanying drawings. The following examples are only for more clearly illustrating the technical aspects of the present invention, and thus are merely examples, which should not be construed as limiting the scope of the present invention.
It is noted that unless otherwise indicated, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this application belongs.
The transition technology element manganese is widely valued and applied in the fields of new energy batteries, inductance devices and the like due to typical multivalent states (+2-valent, +3-valent, +4-valent, +5-valent, +6-valent, +7-valent), but has few applications in the direction of semiconductor power devices due to the problem of device failure caused by overlarge leakage current due to the fact that manganese ions are doped on the front surface.
TABLE 1
As shown in table 1, the recombination efficiency of manganese as a recombination center is theoretically higher than other deep level impurities as well. The deep energy level impurity doped into the semiconductor such as silicon, germanium and the like generates a donor energy level which is far away from the conduction band bottom, and the generated acceptor energy level which is far away from the valence band top can be used as an effective recombination center to guide surrounding electrons and holes to be rapidly recombined in the impurity energy level, so that the service life of unbalanced carriers is shortened, the switching speed of the device is improved, and the application effect of the device is particularly outstanding in few-sub devices of a fast recovery diode. The relative atomic mass of the manganese element is 54.94, which is smaller than heavy metal elements such as gold (197.0) and platinum (195.1), and the manganese element is between phosphorus (30.97) and arsenic (74.92) which are common elements in ion implantation, the manganese element can be doped into a silicon wafer through the ion implantation process, the concentration and the position of ion implantation can be precisely controlled by adjusting the implantation energy and the implantation dosage, and the uniformity and the stability of devices are improved. After implantation, manganese is diffused into the drift region through high-temperature annealing, and a formula is calculated according to a diffusion coefficient:
Wherein, Is Boltzmann constant,/>Is the atomic mass of the metal, n is the number density,/>Is the stacking density. It is known that the diffusion coefficient of atoms with smaller relative atomic mass is higher under the same medium and temperature, so that the manganese expansion process has feasibility.
Example 1
The embodiment provides a manganese doping method of a fast recovery diode, as shown in fig. 1, including:
s1, obtaining an N-type heavily doped silicon substrate 101, wherein the resistivity of the N-type heavily doped silicon substrate 101 is 5+/-3% The thickness is 50-150 μm, and the doping concentration is 1×10 18~1×1024cm-3.
S2, referring to FIG. 2, an N-type lightly doped epitaxial layer 102 is grown on an N-type heavily doped silicon substrate 101; the thickness of the N-type lightly doped epitaxial layer 102 is 20-120 μm, and the doping concentration is 1×10 12~1×1014cm-3.
S3, growing an oxidation masking layer 103 on the N-type lightly doped epitaxial layer 102; a window is formed on the oxidation masking layer 103 through photoetching and etching processes, boron ions are injected, and a main junction 104 and a field limiting ring 105 are formed after annealing.
In a specific embodiment, referring to fig. 3, a low pressure chemical vapor deposition method (Low Pressure Chemical Vapor Deposition, LPCVD) is adopted, ethyl orthosilicate Si (C 2H4O)4 and oxygen O 2) are introduced into a reaction furnace, after the reaction, a layer of SiO 2 is deposited on the N-type lightly doped epitaxial layer 102 to form an oxidation masking layer 103, the thickness of the oxidation masking layer 103 is 12000-25000 a, and the width of the field limiting ring is 3-15 μm.
Referring to fig. 4, a main junction 104 and a field limiting ring 105 are formed after annealing by coating photoresist on the entire device surface and performing photolithography and etching on the photoresist and the oxide masking layer 103 to open an implantation window of the P-well, implant boron ions, and implant a boron ion. In this embodiment, the doping concentration of boron element is 1×10 13~1×1016cm-3, and the junction depth after annealing is 5-15 μm.
S4, depositing a polysilicon layer on the product obtained in the step S3, and obtaining the polysilicon field plate 106 through photoetching.
As shown in fig. 5, a layer of polysilicon can be deposited on the surface of the device by an LPCVD process, siH4 is introduced into the reaction furnace at 600-700 ℃, the surface electric field can be adjusted by depositing a polysilicon layer with a thickness of 1000-5000 a, and then the polysilicon field plate is obtained by photolithography and etching processes. The polysilicon field plate 106 may laterally expand the surface depletion region wider than in the body, thus improving the breakdown characteristics of the device.
S5, as shown in FIG. 6, after the N-type heavily doped silicon substrate 101 is thinned on the back surface, manganese ions 107 are implanted from the back surface and annealed.
In a feasible example, thinning the back surface of the epitaxial wafer by a mechanical grinding method, wherein the thickness of the thinned and removed silicon wafer is 40-80 mu m; the doped manganese ions can enter the drift region faster by implanting the manganese ions after thinning, and meanwhile, the excessively low withstand voltage cannot be caused.
Performing ion implantation after the thinning is finished, and implanting manganese ions 107 into the epitaxial wafer from the back surface at an implantation energy of 200-1000 keV and an implantation angle of 7 DEG, wherein the doping concentration is 1 multiplied by 10 8~1×1010cm-3; and after the implantation is finished, annealing is carried out for 15-30 min at 900-1100 ℃, and the implanted manganese ions are activated and the lattice damage is repaired.
S6, as shown in FIG. 7, depositing a metal electrode 108 on the front and back sides of the product obtained in the step S5; wherein the front metal electrode is located on top of the main junction. The metal electrode 108 may be deposited on the front and back sides of the device, in particular by a vacuum evaporation or magnetron sputtering process. In the embodiment, an Al electrode with the thickness of 3-5 μm is deposited on the surface of the device by a vacuum evaporation method, and then the corresponding metal electrode is obtained by photoetching and wet etching methods.
S7, as shown in FIG. 8, polyimide is coated on the product obtained in the step S6 to form a passivation layer 109 for protecting the device, the thickness of the passivation layer is 3-10 mu m, and the polyimide with the thickness can be used as the passivation layer 109 for effectively protecting the device.
By adopting the technical scheme of the embodiment, the method has at least the following technical effects:
(1) In the embodiment, the manganese ions 107 are introduced as a recombination center, so that the recombination of electrons and holes can be effectively promoted, the service life of carriers is greatly reduced, and fig. 9 shows a comparison chart of the effect of a manganese expansion process and a gold and platinum expansion process in reverse recovery time, and the manganese expansion process can obviously shorten the reverse recovery time;
(2) The effect of front doping on a junction terminal can be avoided, the problem of large leakage current is avoided, deep-level impurities are doped after thinning, and manganese ions can enter a drift region more quickly to play a role of a composite center;
(3) The doping concentration and depth of the deep energy level impurities can be controlled more accurately by the ion implantation process, the consistency and stability of the device are improved, and the production yield is improved;
(4) The manganese-expanding process is selected to reduce the production cost compared with the gold-expanding and platinum-expanding processes.
Example 2
As shown in fig. 8, the fast recovery diode provided in this embodiment is prepared based on the manganese doping method of the fast recovery diode provided in embodiment 1, and the embodiment is based on the same inventive concept as the previous embodiment, and can achieve the same technical effects, which are not described in detail herein.
The foregoing embodiments are only used for describing the technical scheme of the present application in detail, but the descriptions of the foregoing embodiments are only used for helping to understand the method of the embodiments of the present application, and should not be construed as limiting the embodiments of the present application. Variations or alternatives readily apparent to those skilled in the art are intended to be encompassed within the scope of the embodiments of the present application.
Claims (8)
1. A method of doping manganese in a fast recovery diode, comprising:
S1, obtaining an N-type heavily doped silicon substrate;
S2, growing an N-type lightly doped epitaxial layer on the N-type heavily doped silicon substrate;
S3, growing an oxidation masking layer on the N-type lightly doped epitaxial layer; forming a window on the oxidation masking layer through photoetching and etching processes, injecting boron ions, and forming a main junction and a field limiting ring after annealing;
S4, depositing a polysilicon layer on the product obtained in the step S3, and obtaining a polysilicon field plate through photoetching;
S5, after the back surface of the N-type heavily doped silicon substrate is thinned, implanting manganese ions from the back surface and annealing;
S6, depositing metal electrodes on the front and back sides of the product obtained in the step S5; wherein a front metal electrode is located on top of the main junction;
S7, coating polyimide on the product obtained in the step S6 to form a passivation layer.
2. The method of claim 1, wherein the N-type heavily doped silicon substrate has a resistivity of 5 ± 3%The thickness is 50-150 mu m, and the doping concentration is 1 multiplied by 10 18~1×1024 cm-3; the thickness of the N-type lightly doped epitaxial layer is 20-120 mu m, and the doping concentration is 1 multiplied by 10 12~1×1014 cm-3.
3. The method of claim 1, wherein the oxide masking layer has a thickness of 12000-25000 a.
4. The method of claim 3, wherein the boron ion doping concentration in step S3 is1 x 10 13~1×1016 cm-3, and the junction depth after annealing is 5-15 μm.
5. The method of claim 4, wherein step S4 is to deposit a polysilicon layer by an LPCVD process, and SiH 4 is introduced into a reaction furnace at 600-700 ℃, wherein the thickness of the polysilicon layer is 1000-5000 a.
6. The method of claim 5, wherein the thickness of the N-type heavily doped silicon substrate removed in step S5 is 40-80 μm after the back surface is thinned.
7. The method of claim 6, wherein the implantation energy of the manganese ions in step S5 is 200-1000 kev, the implantation angle is 7 °, and the doping concentration is 1 x 10 8~1×1010 cm-3; and annealing at 900-1100 ℃ for 15-30 min after the injection is completed.
8. A fast recovery diode prepared by the method of manganese doping according to any one of claims 1 to 7.
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| CN202311573735.9A CN117594438B (en) | 2023-11-23 | Manganese doping method of fast recovery diode and fast recovery diode |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311573735.9A CN117594438B (en) | 2023-11-23 | Manganese doping method of fast recovery diode and fast recovery diode |
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