CN117554387A - Transparent semitransparent wafer flaw detection equipment - Google Patents
Transparent semitransparent wafer flaw detection equipment Download PDFInfo
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- CN117554387A CN117554387A CN202311747320.9A CN202311747320A CN117554387A CN 117554387 A CN117554387 A CN 117554387A CN 202311747320 A CN202311747320 A CN 202311747320A CN 117554387 A CN117554387 A CN 117554387A
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- wafer
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- 238000001514 detection method Methods 0.000 title claims abstract description 29
- 230000007547 defect Effects 0.000 claims description 22
- 230000003287 optical effect Effects 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 abstract 1
- 238000011179 visual inspection Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 230000001154 acute effect Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N2021/0106—General arrangement of respective parts
- G01N2021/0112—Apparatus in one mechanical, optical or electronic block
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses transparent semitransparent wafer flaw detection equipment which comprises a support, an incident light source, a reflector assembly and a camera assembly, wherein a wafer is placed on the support, the reflector assembly is positioned at the tail end of the incident light source and is used for reflecting light rays of the incident light source to the surface of the wafer, the support is a hollowed-out support, the camera assembly is arranged right below the hollowed-out support and is used for receiving reflected light from the surface of the wafer and scanning and imaging the reflected light to obtain flaw map information of the surface of the wafer.
Description
Technical Field
The invention relates to the field of wafer flaw detection, in particular to transparent semitransparent wafer flaw detection equipment.
Background
In current semiconductor wafer manufacturing processes, inspection of each process node is very important because even minor imperfections may affect wafer performance and reliability. Such flaws include, but are not limited to, scratches, bubbles, defects, impurities, and the like. Among them, scratches are a common flaw, and it is required to be clearly confirmed from various angles because the morphology and direction of the scratches affect the degree of influence on the wafer. Thus, many processes still need to be performed by manual visual inspection.
The manual visual inspection has the advantages of flexibility, and the manual hand-held wafer can be observed at various angles. However, manual visual inspection has some problems, mainly expressed in the following aspects:
the subjective judgment is strong: the result of manual visual inspection is often influenced by subjective consciousness and experience of operators, and different people can make different judgments on the same flaw, so that inconsistency of detection results is caused.
Limited by personnel experience and fatigue level: manual visual inspection requires operators to continuously observe the wafer for a long time, and is easily affected by fatigue degree, so that the detection result is unstable.
The manual visual inspection efficiency is low: the manual visual inspection requires a lot of time and labor, has very low efficiency for a large-scale production line, and is easy to cause the problems of missing detection or false detection and the like.
In order to solve these problems, some automated inspection techniques, such as a wafer defect inspection system based on machine vision, have been developed in recent years. The system can automatically detect the wafer through technologies such as cameras, image processing algorithms, artificial intelligence and the like, and has the characteristics of high efficiency, high accuracy and high consistency. However, these systems are costly and require a significant technical effort and optimization, and thus have certain limitations in practical applications.
Disclosure of Invention
In view of the above technical problems, the present invention provides a transparent semitransparent wafer defect detection apparatus, including:
the wafer is placed on the support, the reflector assembly is located at the tail end of the incident light source and used for reflecting light rays of the incident light source to the surface of the wafer, the support is a hollow support, the camera assembly is arranged right below the hollow support, and the camera assembly receives reflected light from the surface of the wafer and scans the reflected light to form image, so that flaw map information of the surface of the wafer is obtained.
Preferably, the angle of the reflector assembly is adjustable, the reflector assembly comprises an upper reflector assembly and a lower reflector assembly, the upper reflector assembly is arranged above the wafer, light from the incident light source is obliquely injected into the upper surface of the wafer, the lower reflector is arranged below the wafer, and light from the incident light source is obliquely injected into the lower surface of the wafer.
Preferably, the upper reflector group comprises an upper reflector and an upper rotating shaft, the upper rotating shaft is used for adjusting the angle of the upper reflector, the lower reflector comprises a lower reflector and a lower rotating shaft, the lower rotating shaft is used for adjusting the angle of the lower reflector, and the angle of the reflector can be adjusted more accurately, so that light rays can be ensured to accurately irradiate the surface of a wafer, and the accuracy and controllability of detection are improved.
Preferably, the camera assembly includes a lens and a CCD image sensor, the lens focusing light reflected from the wafer onto the CCD image sensor, the CCD image sensor converting the optical signal focused by the lens into a digital image.
Preferably, the lens has high resolution and low distortion characteristics, and has an auto-focusing function.
Preferably, the digital image is black in background, and the wafer flaw part is a bright-colored map, so that flaw conditions of the wafer surface can be displayed more intuitively, and the readability and analysis efficiency of the detection result are improved.
Preferably, the incident light source is a parallel light source.
Preferably, the parallel light source and the reflector assembly are more than two groups, so that the uniformity of illumination can be improved, the defect condition of the surface of the wafer can be observed at more angles, and the comprehensiveness and diversity of detection are improved.
Compared with the prior art, the transparent semitransparent wafer flaw detection device provided by the invention can be used for detecting flaws on the surface of a wafer more effectively. Through the combined use of the bracket, the incident light source, the reflector component and the camera component, the flaw map information on the surface of the wafer can be acquired more accurately, so that the detection accuracy and reliability are improved.
Drawings
The invention is further described below with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of the overall structure of the present invention;
FIG. 2 is a schematic diagram of the structure of embodiment 1 of the present invention;
FIG. 3 is a schematic diagram of the structure of embodiment 2 of the present invention;
FIG. 4 is a schematic diagram of the structure of embodiment 3 of the present invention;
FIG. 5 is a chart of wafer defect inspection according to the present invention.
The figures represent the numbers:
1. the device comprises an incident light source, 2, a wafer, 3, a bracket, 4, a lens, 5, a CCD image sensor, 6, a lower reflector, 7, a lower rotating shaft, 8, an upper reflector, 9, an upper rotating shaft, 10 and flaws.
Detailed Description
Various aspects of the invention are described in further detail below.
Unless defined or otherwise indicated, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art. In addition, any method and material similar or equivalent to those described may be used in the methods of the present invention.
As shown in fig. 1, the present invention provides a transparent semitransparent wafer 2 defect 10 detection apparatus, comprising: support 3, incident light source 1, reflector subassembly and camera subassembly, wafer 2 are placed on the support 3, the reflector subassembly is located the end of incident light source 1, be used for with the light reflection of incident light source 1 arrives the surface of wafer 2, support 3 is fretwork support 3, be equipped with under fretwork support 3 the camera subassembly, the camera subassembly receives the reflected light from wafer 2 surface and scans the formation of image with it, obtains the flaw 10 map information on wafer 2 surface.
The angle of the reflector assembly is adjustable, the reflector assembly comprises an upper reflector 8 assembly and a lower reflector 6 assembly, the upper reflector 8 assembly is arranged above the wafer 2, light from the incident light source 1 is obliquely injected into the upper surface of the wafer 2, and the lower reflector 6 assembly is arranged below the wafer 2, and light from the incident light source 1 is obliquely injected into the lower surface of the wafer 2.
The upper reflector 8 group comprises an upper reflector 8 and an upper rotating shaft 9, the upper rotating shaft 9 is used for adjusting the angle of the upper reflector 8, the lower reflector 6 comprises a lower reflector 6 and a lower rotating shaft 7, the lower rotating shaft 7 is used for adjusting the angle of the lower reflector 6, and the angle of the reflector can be adjusted more accurately, so that light rays can be ensured to accurately irradiate the surface of the wafer 2, and the detection accuracy and controllability are improved.
The camera assembly comprises a lens 4 and a CCD image sensor 5, wherein the lens 4 focuses light reflected by the wafer 2 onto the CCD image sensor 5, and the CCD image sensor 5 converts an optical signal focused by the lens 4 into a digital image.
The lens 4 has high resolution and low distortion characteristics, and has an auto-focusing function.
As shown in fig. 5, the digital image is a map with black background and bright color at the flaw 10 of the wafer 2, so that the flaw 10 condition on the surface of the wafer 2 can be more intuitively displayed, and the readability and analysis efficiency of the detection result are improved.
The incident light source 1 is a parallel light source.
The parallel light source and the reflector assembly are more than two groups, so that the illumination uniformity can be improved, the defect 10 condition on the surface of the wafer 2 can be observed at more angles, and the comprehensiveness and diversity of detection are improved.
The clockwise included angles of the upper reflector 8, the lower reflector 6 and the horizontal line are smaller than or equal to 90 degrees.
As shown in fig. 2, in embodiment 1 of the present invention, a camera assembly is located under a wafer 2 and a hollow support 3, the center of a lens 4 is coaxial with the center of the wafer 2, an incident light source 1 is located on one side of the camera assembly, an upper reflector 8 is perpendicular to a horizontal line, a clockwise included angle between a lower reflector 6 and the horizontal line is an acute angle, parallel light from the incident light source 1 is reflected to the lower surface of the wafer 2 by the lower reflector 6, at a smooth position of the lower surface of the wafer 2, incident light from the lower reflector 6 is reflected by the lower surface of the wafer 2 to form emergent light, the normal of the emergent light and the incident light is perpendicular to the surface of the wafer 2, and the emergent light is emergent to the outside of the camera assembly and is not captured by the lens 4; at the position of a defect 10 on the lower surface of the wafer 2, the incident light from the lower reflector 6 is reflected by the position of the defect 10 to form emergent light, the emergent light at the position is offset in normal due to the unevenness at the defect 10, the emergent light is captured by the lens 4, the background of the wafer 2 is black through the CCD image sensor 5, and the defect 10 is an obvious map of bright color.
As embodiment 2 of the present invention, as shown in fig. 3, the camera assembly is located under the wafer 2 and the hollow support 3, the center of the lens 4 is coaxial with the center of the wafer 2, the incident light source 1 is located on one side of the camera assembly, the lower reflector 6 is perpendicular to the horizontal line, the upper reflector 8 forms an acute angle with the clockwise direction of the horizontal line, the parallel light from the incident light source 1 is reflected to the upper surface of the wafer 2 by the upper reflector 8, at the smooth position of the upper surface of the wafer 2, the incident light from the upper reflector 8 forms emergent light through the reflection of the upper surface of the wafer 2, the normal of the emergent light and the incident light is perpendicular to the surface of the wafer 2, and the emergent light is emergent outside the camera assembly and cannot be captured by the lens 4; at the position of a defect 10 on the upper surface of the wafer 2, the incident light from the upper reflector 8 is reflected by the position of the defect 10 to form emergent light, the emergent light at the position is offset in normal due to the unevenness at the defect 10, the emergent light is captured by the lens 4, the wafer 2 background is black, and the defect 10 is a clear map of the bright color generated by the radial CCD image sensor 5.
As embodiment 3 of the present invention, as shown in fig. 4, the camera assembly is located under the wafer 2 and the hollowed-out support 3, the center of the lens 4 is coaxial with the center of the wafer 2, the incident light source 1 is located on one side of the camera assembly, the clockwise included angle of the upper reflective mirror 8, the lower reflective mirror 6 and the horizontal line is an acute angle, the included angle of the upper reflective mirror 8 is smaller than the included angle of the lower reflective mirror 6, the incident light source 1 can irradiate on the upper reflective mirror 8 and the lower reflective mirror 6 at the same time, and based on the two embodiments, the present invention can detect flaws 10 on the upper and lower surfaces of the wafer 2 at the same time and form a map.
The angles of the upper reflector 8 and the lower reflector 6 can be adjusted through respective rotating shafts, and the angle of incident light irradiated to the surface of the wafer 2 can be adjusted through the rotation change of the upper rotating shaft 9 and the lower rotating shaft 7, so that the angle with obvious image of the detected flaw 10 can be found.
In embodiment 4 of the present invention, the camera is located under the wafer 2 and the hollow support 3, the center of the lens 4 is coaxial with the center of the wafer 2, and the incident light sources 1 are more than two groups, and are distributed around the camera assembly, so that the uniformity of illumination can be improved.
Compared with the prior art, the transparent semitransparent wafer 2 flaw 10 detection device provided by the invention can be used for more effectively detecting flaws 10 on the surface of the wafer 2. Through the combined use of the bracket 3, the incident light source 1, the reflector assembly and the camera assembly, the flaw 10 map information on the surface of the wafer 2 can be acquired more accurately, so that the detection accuracy and reliability are improved.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (8)
1. A transparent semitransparent wafer flaw detection device is characterized in that: the wafer processing device comprises a support, an incident light source, a reflector assembly and a camera assembly, wherein the wafer is placed on the support, the reflector assembly is located at the tail end of the incident light source and used for reflecting light rays of the incident light source to the surface of the wafer, the support is a hollowed-out support, the camera assembly is arranged right below the hollowed-out support, and the camera assembly receives reflected light from the surface of the wafer and scans and images the reflected light to obtain flaw map information of the surface of the wafer.
2. A transparent semitransparent wafer defect detection apparatus according to claim 1 wherein: the angle of the reflector assembly is adjustable, the reflector assembly comprises an upper reflector assembly and a lower reflector assembly, the upper reflector assembly is arranged above the wafer, light rays from the incident light source are obliquely injected into the upper surface of the wafer, the lower reflector is arranged below the wafer, and light rays from the incident light source are obliquely injected into the lower surface of the wafer.
3. A transparent semitransparent wafer defect detection apparatus according to claim 2 wherein: the upper reflector group comprises an upper reflector and an upper rotating shaft, the upper rotating shaft is used for adjusting the angle of the upper reflector, the lower reflector comprises a lower reflector and a lower rotating shaft, and the lower rotating shaft is used for adjusting the angle of the lower reflector.
4. A transparent semitransparent wafer defect detection apparatus according to claim 3 wherein: the camera assembly comprises a lens and a CCD image sensor, wherein the lens focuses light reflected by the wafer onto the CCD image sensor, and the CCD image sensor converts an optical signal focused by the lens into a digital image.
5. A transparent semitransparent wafer defect detection apparatus according to claim 4 wherein: the lens has the characteristics of high resolution and low distortion and has an automatic focusing function.
6. A transparent semitransparent wafer defect detection apparatus according to claim 4 wherein: the digital image is a map with black background and bright color at the wafer flaw.
7. A transparent semitransparent wafer defect detection apparatus according to any one of claims 1-6 wherein: the incident light source is a parallel light source.
8. A transparent semitransparent wafer defect detection apparatus according to claim 7 wherein: the parallel light source and the reflector component are more than two groups.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311747320.9A CN117554387A (en) | 2023-12-18 | 2023-12-18 | Transparent semitransparent wafer flaw detection equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311747320.9A CN117554387A (en) | 2023-12-18 | 2023-12-18 | Transparent semitransparent wafer flaw detection equipment |
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| Publication Number | Publication Date |
|---|---|
| CN117554387A true CN117554387A (en) | 2024-02-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202311747320.9A Pending CN117554387A (en) | 2023-12-18 | 2023-12-18 | Transparent semitransparent wafer flaw detection equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117871415A (en) * | 2024-03-11 | 2024-04-12 | 天津大学四川创新研究院 | Exposure type structural flaw detection system and method based on parallel light source |
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2023
- 2023-12-18 CN CN202311747320.9A patent/CN117554387A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117871415A (en) * | 2024-03-11 | 2024-04-12 | 天津大学四川创新研究院 | Exposure type structural flaw detection system and method based on parallel light source |
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