CN117501445A - 半导体装置 - Google Patents

半导体装置 Download PDF

Info

Publication number
CN117501445A
CN117501445A CN202280043166.4A CN202280043166A CN117501445A CN 117501445 A CN117501445 A CN 117501445A CN 202280043166 A CN202280043166 A CN 202280043166A CN 117501445 A CN117501445 A CN 117501445A
Authority
CN
China
Prior art keywords
semiconductor elements
semiconductor device
semiconductor
electrode
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN202280043166.4A
Other languages
English (en)
Chinese (zh)
Inventor
柴田幸太郎
松尾昌明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of CN117501445A publication Critical patent/CN117501445A/zh
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/501—Inductive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/009—Resonant driver circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
CN202280043166.4A 2021-06-17 2022-06-06 半导体装置 Withdrawn CN117501445A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021100830 2021-06-17
JP2021-100830 2021-06-17
PCT/JP2022/022797 WO2022264851A1 (ja) 2021-06-17 2022-06-06 半導体装置

Publications (1)

Publication Number Publication Date
CN117501445A true CN117501445A (zh) 2024-02-02

Family

ID=84526401

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280043166.4A Withdrawn CN117501445A (zh) 2021-06-17 2022-06-06 半导体装置

Country Status (5)

Country Link
US (1) US12483241B2 (https=)
JP (1) JPWO2022264851A1 (https=)
CN (1) CN117501445A (https=)
DE (1) DE112022002599T5 (https=)
WO (1) WO2022264851A1 (https=)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9543940B2 (en) * 2014-07-03 2017-01-10 Transphorm Inc. Switching circuits having ferrite beads
JP2016046842A (ja) * 2014-08-20 2016-04-04 株式会社日立製作所 電力変換装置およびそれを用いたエレベータ
JP2016225493A (ja) 2015-06-01 2016-12-28 株式会社Ihi パワーモジュール
JP2017011081A (ja) * 2015-06-22 2017-01-12 株式会社日立製作所 パワー半導体モジュールおよびそれを用いた電力変換器
US9614477B1 (en) * 2016-01-12 2017-04-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Envelope tracking supply modulators for multiple power amplifiers
JP7163054B2 (ja) * 2017-04-20 2022-10-31 ローム株式会社 半導体装置
JP6881399B2 (ja) * 2018-06-29 2021-06-02 株式会社デンソー 電力用半導体装置及び電力変換装置
JP6509414B1 (ja) * 2018-07-30 2019-05-08 三菱電機株式会社 電力変換装置
CN111801795B (zh) * 2018-09-14 2024-11-12 富士电机株式会社 半导体装置
JP6962945B2 (ja) * 2019-01-30 2021-11-05 株式会社 日立パワーデバイス パワー半導体モジュールおよびそれを用いた電力変換装置
JP7198168B2 (ja) * 2019-07-19 2022-12-28 株式会社 日立パワーデバイス パワー半導体モジュール
JP7133524B2 (ja) * 2019-09-13 2022-09-08 株式会社 日立パワーデバイス 電力変換装置、鉄道車両電気システム
DE212020000598U1 (de) * 2019-09-27 2021-12-01 Rohm Co., Ltd. Halbleitervorrichtung

Also Published As

Publication number Publication date
US20240056073A1 (en) 2024-02-15
WO2022264851A1 (ja) 2022-12-22
US12483241B2 (en) 2025-11-25
DE112022002599T5 (de) 2024-03-14
JPWO2022264851A1 (https=) 2022-12-22

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Application publication date: 20240202