CN117374100A - Gallium nitride material epitaxial structure based on silicon substrate and preparation method thereof - Google Patents

Gallium nitride material epitaxial structure based on silicon substrate and preparation method thereof Download PDF

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CN117374100A
CN117374100A CN202311201290.1A CN202311201290A CN117374100A CN 117374100 A CN117374100 A CN 117374100A CN 202311201290 A CN202311201290 A CN 202311201290A CN 117374100 A CN117374100 A CN 117374100A
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silicon substrate
gallium
gallium nitride
layer
epitaxial structure
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王洪
方溢
王楷
沈霈
陈玲
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South China University of Technology SCUT
Zhongshan Institute of Modern Industrial Technology of South China University of Technology
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South China University of Technology SCUT
Zhongshan Institute of Modern Industrial Technology of South China University of Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
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    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface

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Abstract

The invention discloses a gallium nitride material epitaxial structure based on a silicon substrate and a preparation method thereof. The preparation method of the gallium nitride material epitaxial structure comprises the following steps: providing a silicon substrate, and forming an aluminum nitride nucleation layer on the silicon substrate; growing an AlGaN buffer layer on the aluminum nitride nucleation layer; before growing an AlGaN buffer layer, independently introducing a 5s-30s gallium source on an aluminum nitride nucleation layer in advance to form a gallium coating; and growing a gallium nitride film on the AlGaN buffer layer. In the embodiment of the invention, the gallium coating is inserted between the aluminum nitride and the AlGaN buffer layer, so that the three-dimensional island density and the three-dimensional island size of the AlGaN layer at the initial growth stage are effectively adjusted, the growth quality of the AlGaN film is improved, the pre-compression stress provided by the AlGaN film on the gallium nitride film can be increased, and the surface of the epitaxially grown gallium nitride film has no crack. The process has simple steps, small introduced additional cost and can effectively solve the problem of cracking of the gallium nitride film on the silicon substrate caused by lattice mismatch.

Description

Gallium nitride material epitaxial structure based on silicon substrate and preparation method thereof
Technical Field
The invention relates to the technical field of film preparation of third-generation semiconductor materials, in particular to a gallium nitride material epitaxial structure based on a silicon substrate and a preparation method thereof.
Background
The gallium nitride material has large forbidden bandwidth, high critical breakdown field intensity and high electron mobility, and has been widely applied to the fields of aerospace, communication and the like. Heteroepitaxial growth techniques for gallium nitride materials are critical to reducing the cost of commercial applications for gallium nitride-based semiconductor devices. At present, the large-size preparation technology of the silicon substrate is mature, the cost is low, the integration of semiconductor photoelectric devices can be realized, and the requirements of large-scale growth of nitride semiconductor materials and devices can be met, so that the silicon substrate has great market competitiveness.
However, the lattice mismatch of silicon (111) and gallium nitride may be up to 17% and the thermal mismatch of both may be up to 116%. Both mismatches can result in severe cracking and higher dislocation density of the epitaxially grown gallium nitride film on the silicon substrate. A common approach to solve the above problems is based on the provision of a buffer layer with a lattice constant between that of silicon and gallium nitride, which is introduced by providing a pre-stress. Firstly, an AlN nucleation layer grown on a silicon substrate can prevent the generation of back melting etching, and then, the AlGaN buffer layer provides pre-stress for gallium nitride, counteracts tensile stress caused by thermal mismatch in the epitaxial film cooling process, inhibits the generation of cracks, and simultaneously serves as a dislocation annihilation layer. However, there is still some degree of lattice mismatch between the AlGaN buffer layer of lower Al composition and the AlN nucleation layer. Therefore, the growth of the AlGaN buffer layer is critical to the quality of the gallium nitride epitaxial film grown thereon.
For the growth process of the AlGaN buffer layer, the pre-gallium-spreading process also enters the field of view of researchers. Due to the existence of potential energy, in the growth process of the AlN layer step flow (keeping the 2D mode), al atoms on the upper step surface have a tendency to diffuse to the lower step surface, and introducing Ga can reduce the energy barrier of the tendency, so that the growth mode of the AlN layer which is continuously grown can be maintained or the three-dimensional growth of the AlGaN layer is rapidly converted into two-dimensional growth, and the dislocation density is reduced. Moreover, as the three-dimensional island is interlined, dislocation is generated, compressive stress is consumed, and the phenomenon can be avoided by two-dimensional growth; when the pre-gallium-paving process is added, the transverse migration speed of Al atoms is increased, the AlGaN layer can be quickly converted into a two-dimensional growth mode, the compressive stress consumed by combination among islands is reduced, and then the compressive stress can be maintained, so that the tensile stress generated in the epitaxial layer during subsequent cooling is counteracted, and cracks are improved.
In the prior art, a silicon-based GaN film and an epitaxial growth method thereof, wherein the epitaxial growth method comprises the following steps: s1, introducing trimethylaluminum and ammonia gas into a reaction chamber, and preprocessing a Si substrate at a target temperature and a target gas flow; s2, epitaxially growing an AlN nucleation layer on the pretreated Si substrate; s3, growing an AlGaN buffer layer on the AlN nucleation layer; and S4, growing a GaN layer on the AlGaN buffer layer. According to the epitaxial growth method, firstly, the Si substrate is preprocessed, then the epitaxial layer is epitaxially grown, the preprocessed Si substrate can be protected, the surface of the Si substrate is smoother, migration of Al atoms in the deposition process of the AlN nucleation layer is facilitated, the Al atoms can reach an equilibrium position more easily, the AlN nucleation layer is more prone to growth in a two-dimensional mode, the epitaxial layer on the AlN nucleation layer is also more prone to growth in the two-dimensional mode, dislocation extension is facilitated to be blocked, the obtained epitaxial layer is smoother, and the quality of epitaxial GaN crystals is improved.
The prior art pretreats the substrate to adjust the AlN growth so that the AlN growth is better.
In the prior art, a GaN-based radio frequency device epitaxial structure based on a Si substrate and a manufacturing method thereof are provided, wherein the GaN-based radio frequency device epitaxial structure is formed by sequentially stacking the Si substrate, an AlN nucleation layer, an AlGaN buffer layer and GaN from bottom to top: fe/GaN high-resistance layer, gaN superlattice layer, gaN channel layer the AlGaN barrier layer and the GaN cap layer are formed; wherein, gaN: the Fe/GaN high-resistance layer is formed by alternately connecting intentional iron doped GaN layers and unintentional doped GaN layers; the thickness of each of the intentional iron doped GaN layer and the unintentional doped GaN layer is 100 nm-200 nm; the GaN superlattice layer is formed by periodically and alternately connecting a low-voltage/low-V/III ratio GaN layer and a high-voltage/high-V/III ratio GaN layer; the thickness of each of the low-voltage/low-V/III ratio GaN layer and the high-voltage/high-V/III ratio GaN layer is 20-50 nm.
In the prior art, a gallium nitride-based high electron mobility transistor epitaxial structure and a manufacturing method thereof. The epitaxial structure comprises a substrate layer, and an AlN nucleation layer, an AlGaN buffer layer, an Al doped GaN template layer and an AlGaN barrier layer are sequentially grown on the substrate layer from bottom to top. According to the prior art, when the gallium nitride-based high electron mobility transistor epitaxial structure is manufactured, the method of forming the GaN template layer by utilizing Al doping can reduce dislocation density of materials, improve flatness of interfaces, improve electron mobility of the materials, reduce surface state density of a heteroepitaxial AlGaN barrier layer, further reduce leakage current of devices, improve breakdown voltage of the devices and enable the process to be simple and easy to implement.
In the prior art, the AlN nucleation layer is not treated, the three-dimensional island density and the three-dimensional island size of the AlGaN layer at the initial growth stage are not effectively adjusted, the growth quality of the AlGaN film is not improved, the pre-compression stress provided by the AlGaN film on the gallium nitride film cannot be increased, and cracks appear on the surface of the epitaxially grown gallium nitride film.
In the prior art, a preparation method of a gallium nitride-based high electron mobility transistor epitaxial wafer comprises the following steps: providing a substrate; sequentially depositing an AlN nucleation layer on the substrate; growing an AlGaN buffer layer on the AlN nucleation layer, sequentially introducing NH3 and an Al source into the AlGaN buffer layer in an intermittent growth mode, wherein the NH3 and the Al source are not simultaneously introduced into the reaction cavity, and growing the AlGaN buffer layer comprises: NH3 and Ga source are introduced into the reaction cavity, and the introduction time is t1; continuously introducing a Ga source, and after an interval of time delta t, introducing an Al source into the reaction cavity, wherein the introduction time is t2, and the ratio of the introduction time t1 of NH3 to the introduction time t2 of the Al source is 1:1-10:1; and sequentially growing a high-resistance buffer layer, a channel layer, an AlGaN barrier layer and a P-type GaN cap layer on the AlGaN buffer layer.
The method for processing the AlN nucleation layer in the prior art is characterized in that an AlGaN buffer layer is sequentially introduced with NH3 and Al sources in a discontinuous growth mode, and the process is complex.
Disclosure of Invention
The invention mainly aims to provide a gallium nitride material epitaxial structure based on a silicon substrate and a preparation method, which are mutually complemented with the prior art.
The object of the invention is achieved by at least one of the following technical solutions.
A gallium nitride material epitaxial structure based on a silicon substrate comprises the silicon substrate, an AlN nucleation layer, a gallium coating layer, an AlGaN buffer layer and a gallium nitride epitaxial film which are sequentially laminated from bottom to top.
Further, the thicknesses of the silicon substrate, the AlN nucleation layer, the gallium coating, the AlGaN buffer layer and the gallium nitride epitaxial film are respectively 0.5-1.5mm and 80-200nm;0.5-2.5nm;200-400nm;1000-1500nm.
Further, the mole content percentage of Al in the AlGaN buffer layer is 20% -30%.
A preparation method of a gallium nitride material epitaxial structure based on a silicon substrate comprises the following steps:
s1, providing a silicon substrate, placing the silicon substrate into a reaction cavity, performing surface treatment on the silicon substrate, and epitaxially growing an AlN nucleation layer on the silicon substrate by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) method;
s2, growing a gallium coating on the AlN nucleation layer;
s3, epitaxially growing an AlGaN buffer layer on the AlN nucleation layer with the gallium coating;
and S4, epitaxially growing a gallium nitride film on the AlGaN buffer layer.
Further, in step S1, the silicon substrate is circular and has a size of 4inch-8inch.
Further, in step S2, a gallium source is independently introduced onto the AlN nucleation layer to form a gallium coating.
Further, in step S2, the gallium source separately introduced into the AlN nucleation layer includes trimethylgallium or triethylgallium.
Further, in the step S1, the temperature of the reaction cavity is controlled to be 900-1200 ℃; the pressure of the reaction chamber is 60Torr-90Torr, and the time for independently introducing trimethylgallium is 5-30s. The flow rate of the gallium source independently fed into the gallium source is 100-300 sccm.
Further, the temperature in the reaction chamber at the time of growing the gallium coating layer in step S2 is equal to or lower than the temperature in the reaction chamber at the time of growing the AlN nucleation layer in step S1;
the pressure in the reaction chamber at the time of growing the gallium coating layer in step S2 is equal to or greater than the pressure in the reaction chamber at the time of growing the AlN nucleation layer in step S1.
Further, the temperature in the reaction chamber is lower when the gallium nitride film is grown in the step S4 than when the gallium coating is grown in the step S2;
the pressure in the reaction chamber at the time of growing the gallium nitride film in step S4 is higher than the pressure in the reaction chamber at the time of growing the gallium coating in step S2.
Compared with the prior art, the method adopted by the invention is that the gallium source is independently introduced on the AlN nucleation layer in advance, and the gallium source introduced in advance can improve the bonding energy of the AlN nucleation layer surface, so that the AlGaN is better converted from a three-dimensional growth mode to a two-dimensional growth mode in the growth process, thereby providing better pre-compression stress for the gallium nitride film epitaxially grown on the AlGaN film and counteracting the tensile stress generated due to thermal mismatch between gallium nitride and a silicon substrate in the cooling process. The technology adopted by the invention has the advantages of greatly improving the cracks of the gallium nitride epitaxial film on the silicon substrate, no need of introducing reaction sources except gallium and aluminum, simple process, no pollution in the production process and suitability for large-scale production.
Drawings
In order to more clearly illustrate the technical solutions and advantages of the embodiments of the present patent, the following description of the embodiments refers to the accompanying drawings.
Fig. 1 is a flowchart of a method for preparing an epitaxial structure of a gallium nitride material based on a silicon substrate according to an embodiment of the invention;
fig. 2 is a schematic structural diagram of an epitaxial structure of a gallium nitride material based on a silicon substrate according to an embodiment of the present invention;
fig. 3 is a data parameter diagram of a gallium nitride material epitaxial structure based on a silicon substrate according to an embodiment of the invention.
Detailed Description
In the following description, technical solutions are set forth in connection with specific illustrations in order to provide a full understanding of the present application. This application may be carried out in a number of other ways than those herein set forth, and similar embodiments will be apparent to those of ordinary skill in the art without the exercise of inventive faculty.
The terminology used in the description presented herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the description. As used in this specification, one or more embodiments and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used in one or more embodiments of the present specification refers to and encompasses any or all possible combinations of one or more of the associated listed items.
It should be understood that, although the terms first, second, etc. may be used in one or more embodiments of the present specification to describe various information, these information should not be limited to these terms, these terms should be used merely to distinguish one from another and should not be used in order or sequence of features described in one or more embodiments of the present specification. Furthermore, the terms "comprises," "comprising," and "includes" are intended to cover a non-exclusive scope, e.g., a process, method, system, article, or apparatus that comprises a list of steps or modules is not necessarily limited to the details of those steps or modules, but may include inherent elements not expressly listed for such steps or modules.
Example 1:
a gallium nitride material epitaxial structure based on a silicon substrate, which is shown in fig. 2, from bottom to top, comprises a silicon substrate 1, an AlN nucleation layer 2, a gallium coating 3, an AlGaN buffer layer 4 and a gallium nitride film 5.
In this embodiment, as shown in FIG. 3, the silicon substrate 1 has a diameter of 4inch and a thickness of 1000nm; the thickness of the AlN nucleation layer 2 is 120nm; the thickness of the gallium coating 3 is 2nm; the thickness of the AlGaN buffer layer 4 is 300nm; the thickness of the gallium nitride thin film 5 is 1200nm.
Example 2:
a preparation method of a gallium nitride material epitaxial structure based on a silicon substrate, as shown in figure 1, comprises the following steps:
s1, providing a silicon substrate, placing the silicon substrate into an MOCVD reaction cavity, introducing hydrogen into the reaction cavity, and annealing the silicon substrate in a hydrogen atmosphere; the annealing temperature is 1090-1100 ℃;
the growth temperature of the reaction chamber is controlled to 1050 ℃, and the pressure in the reaction chamber is controlled to 75Torr. And introducing trimethylaluminum into the reaction cavity to form an AlN nucleation layer on the silicon substrate. Preferably, the AlN nucleation layer has a thickness of 100-110nm;
s2, stopping introducing trimethylaluminum and ammonia, controlling the temperature and pressure in the reaction cavity to 1050 ℃ and 75Torr, and independently introducing a gallium source into the reaction cavity to form a gallium coating on the AlN nucleation layer.
And S3, introducing trimethylaluminum and trimethylgallium into the reaction cavity, and growing an AlGaN buffer layer on the gallium coating.
S4, controlling the temperature and pressure in the reaction cavity of the equipment to be 1030 ℃ and 200Torr respectively, and epitaxially growing a gallium nitride film on the AlGaN buffer layer.
Preferably, the gallium source separately introduced in step S2 is trimethylgallium. The amount of trimethylgallium introduced was 138sccm, the time of introduction was 20s, and the thickness of the gallium coating was 2nm.
Preferably, the Al composition of the AlGaN buffer layer is 30%.
In this example, the flow rate of gallium source independently introduced on the AlN nucleation layer is controlled by a mass flow device of the metal organic chemical vapor deposition equipment.
Example 3:
in this embodiment, the step of preparing a gallium nitride material epitaxial structure based on a silicon substrate includes:
s1, performing high-temperature annealing treatment on a silicon substrate;
s2, controlling the temperature and the pressure in the reaction cavity to be 1050 ℃ and 75Torr respectively, and epitaxially growing an AlN nucleation layer on the silicon substrate;
s3, changing the temperature and pressure in the reaction cavity to 1045 ℃ and 70Torr, and independently introducing trimethylgallium on the AlN nucleation layer to form a gallium coating;
preferably, the flow rate of the trimethylgallium is 120sccm, and the introduction time is 25s. The thickness of the gallium coating is 2.5nm;
s4, keeping the temperature of the reaction cavity at 1045 ℃ and the pressure in the reaction cavity at 70Torr. Epitaxially growing an AlGaN buffer layer on the gallium coating; preferably, the Al composition of the AlGaN buffer layer is 30%.
S5, changing the temperature and pressure in the reflection cavity to 1040 ℃ and 65Torr respectively. And epitaxially growing a gallium nitride epitaxial film on the AlGaN buffer layer. Preferably, the thickness of the gallium nitride epitaxial film is 1.5 μm.
In conclusion, the preparation process is simple, does not need to introduce metal organic compounds except a gallium source and an aluminum source, and is suitable for large-scale production. By introducing a gallium coating on the AlN nucleation layer, the nucleation island density and the size of the AlGaN buffer layer in the initial growth stage can be effectively adjusted, the pre-compression stress provided by the AlGaN layer on the gallium nitride film is increased, and the cracks of the gallium nitride epitaxial film are obviously reduced. Therefore, the method for effectively reducing the cracks of the gallium nitride epitaxial film can be used as a substitute for other methods, and has higher practical use value.
The above examples are only preferred embodiments of the present invention, and are merely for illustrating the present invention, not for limiting the present invention, and those skilled in the art should not be able to make any changes, substitutions, modifications and the like without departing from the spirit of the present invention.
The above disclosed preferred embodiments of the present application are only used to aid in understanding the present invention and the core ideas. The present description should not be construed as limiting the invention to the particular application scenario and implementation of the operations that will vary to those of ordinary skill in the art based on the teachings of the present invention. The invention is limited only by the claims and the full scope and equivalents thereof.

Claims (10)

1. The gallium nitride material epitaxial structure based on the silicon substrate is characterized by comprising the silicon substrate, an AlN nucleation layer, a gallium coating layer, an AlGaN buffer layer and a gallium nitride epitaxial film which are sequentially laminated from bottom to top.
2. The method for preparing the epitaxial structure of the gallium nitride material based on the silicon substrate according to claim 1, wherein the method comprises the following steps: the thicknesses of the silicon substrate, the AlN nucleation layer, the gallium coating, the AlGaN buffer layer and the gallium nitride epitaxial film are respectively 0.5-1.5mm and 80-200nm;0.5-2.5nm;200-400nm;1000-1500nm.
3. The method for preparing the epitaxial structure of the gallium nitride material based on the silicon substrate according to claim 1, wherein the method comprises the following steps: the mole content percentage of Al in the AlGaN buffer layer is 20% -30%.
4. The preparation method of the gallium nitride material epitaxial structure based on the silicon substrate is characterized by comprising the following steps of:
s1, providing a silicon substrate, placing the silicon substrate into a reaction cavity, performing surface treatment on the silicon substrate, and epitaxially growing an AlN nucleation layer on the silicon substrate by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) method;
s2, growing a gallium coating on the AlN nucleation layer;
s3, epitaxially growing an AlGaN buffer layer on the AlN nucleation layer with the gallium coating;
and S4, epitaxially growing a gallium nitride film on the AlGaN buffer layer.
5. The method for preparing a gallium nitride material epitaxial structure based on a silicon substrate according to claim 4, wherein in the step S1, the silicon substrate is circular and has a size of 4inch-8inch.
6. The method for preparing the epitaxial structure of the gallium nitride material based on the silicon substrate according to claim 4, wherein the method comprises the following steps: in step S2, independently introducing a gallium source on the AlN nucleation layer to form a gallium coating.
7. The method for preparing the epitaxial structure of the gallium nitride material based on the silicon substrate according to claim 6, wherein the method comprises the following steps: in step S2, the gallium source separately introduced into the AlN nucleation layer includes trimethylgallium or triethylgallium.
8. The method for preparing the epitaxial structure of the gallium nitride material based on the silicon substrate according to claim 4, wherein the method comprises the following steps: in the step S1, the temperature of the reaction cavity is controlled to be 900-1200 ℃; the pressure of the reaction cavity is 60Torr-90Torr, and the time for independently introducing trimethylgallium is 5-30s; the flow rate of the gallium source independently fed into the gallium source is 100-300 sccm.
9. The method for preparing the epitaxial structure of the gallium nitride material based on the silicon substrate according to claim 4, wherein the method comprises the following steps: the temperature in the reaction chamber when the gallium coating is grown in the step S2 is equal to or lower than the temperature in the reaction chamber when the AlN nucleation layer is grown in the step S1;
the pressure in the reaction chamber at the time of growing the gallium coating layer in step S2 is equal to or greater than the pressure in the reaction chamber at the time of growing the AlN nucleation layer in step S1.
10. The method for preparing the epitaxial structure of the gallium nitride material based on the silicon substrate according to claim 4, wherein the method comprises the following steps: the temperature in the reaction chamber is lower in the step S4 when the gallium nitride film is grown than in the step S2 when the gallium coating is grown;
the pressure in the reaction chamber at the time of growing the gallium nitride film in step S4 is higher than the pressure in the reaction chamber at the time of growing the gallium coating in step S2.
CN202311201290.1A 2023-09-15 2023-09-15 Gallium nitride material epitaxial structure based on silicon substrate and preparation method thereof Pending CN117374100A (en)

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