CN117157344A - 树脂组合物、固化物、层叠体、固化物的制造方法及半导体器件、以及聚酰亚胺前驱体及其制造方法 - Google Patents

树脂组合物、固化物、层叠体、固化物的制造方法及半导体器件、以及聚酰亚胺前驱体及其制造方法 Download PDF

Info

Publication number
CN117157344A
CN117157344A CN202280025236.3A CN202280025236A CN117157344A CN 117157344 A CN117157344 A CN 117157344A CN 202280025236 A CN202280025236 A CN 202280025236A CN 117157344 A CN117157344 A CN 117157344A
Authority
CN
China
Prior art keywords
group
formula
resin composition
compound
cured product
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280025236.3A
Other languages
English (en)
Chinese (zh)
Inventor
野崎敦靖
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of CN117157344A publication Critical patent/CN117157344A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B32B15/088—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyamides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/08—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated side groups
    • C08F290/14—Polymers provided for in subclass C08G
    • C08F290/145—Polyamides; Polyesteramides; Polyimides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • C08F299/02—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
CN202280025236.3A 2021-03-30 2022-03-28 树脂组合物、固化物、层叠体、固化物的制造方法及半导体器件、以及聚酰亚胺前驱体及其制造方法 Pending CN117157344A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-057510 2021-03-30
JP2021057510 2021-03-30
PCT/JP2022/015002 WO2022210532A1 (ja) 2021-03-30 2022-03-28 樹脂組成物、硬化物、積層体、硬化物の製造方法、及び、半導体デバイス、並びに、ポリイミド前駆体及びその製造方法

Publications (1)

Publication Number Publication Date
CN117157344A true CN117157344A (zh) 2023-12-01

Family

ID=83456366

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280025236.3A Pending CN117157344A (zh) 2021-03-30 2022-03-28 树脂组合物、固化物、层叠体、固化物的制造方法及半导体器件、以及聚酰亚胺前驱体及其制造方法

Country Status (4)

Country Link
JP (1) JPWO2022210532A1 (https=)
KR (1) KR102864324B1 (https=)
CN (1) CN117157344A (https=)
WO (1) WO2022210532A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117903685A (zh) * 2024-01-10 2024-04-19 中国地质大学（北京） 一种环境友好型聚酰亚胺绝缘漆及其制备方法与应用

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240156619A (ko) * 2022-03-29 2024-10-30 후지필름 가부시키가이샤 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 적층체의 제조 방법, 반도체 디바이스의 제조 방법, 및, 반도체 디바이스
JP7798436B2 (ja) 2022-11-07 2026-01-14 エルジー エナジー ソリューション リミテッド 正極およびそれを用いて製造されたリチウム二次電池
KR102550865B1 (ko) * 2022-11-28 2023-07-04 주식회사 피엔에스테크놀로지 폴리아믹산에스테르와 이의 제조방법 및 상기 폴리아믹산에스테르를 포함하는 감광성 수지 조성물.

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06172737A (ja) * 1992-12-04 1994-06-21 Sumitomo Bakelite Co Ltd フィルム接着剤およびその製造方法
JPH11181091A (ja) * 1997-12-25 1999-07-06 Mitsui Chem Inc ポリアミド酸共重合体、及び、ポリイミド共重合体
TW201823313A (zh) * 2016-11-03 2018-07-01 美商富士軟片電子材料美國股份有限公司 聚醯亞胺
WO2020189358A1 (ja) * 2019-03-15 2020-09-24 富士フイルム株式会社 硬化性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、半導体デバイス、及び、ポリマー前駆体

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012224755A (ja) 2011-04-20 2012-11-15 Hitachi Chemical Dupont Microsystems Ltd 高透明なポリイミド前駆体及びそれを用いた樹脂組成物、ポリイミド成形体とその製造方法、プラスチック基板、保護膜とそれを有する電子部品、表示装置
JP7327410B2 (ja) 2018-10-15 2023-08-16 日産化学株式会社 ポリアミック酸エステル樹脂組成物
CN114207520B (zh) * 2019-08-01 2025-12-05 东丽株式会社 感光性树脂组合物、感光性片、固化膜、固化膜的制造方法、层间绝缘膜及电子部件

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06172737A (ja) * 1992-12-04 1994-06-21 Sumitomo Bakelite Co Ltd フィルム接着剤およびその製造方法
JPH11181091A (ja) * 1997-12-25 1999-07-06 Mitsui Chem Inc ポリアミド酸共重合体、及び、ポリイミド共重合体
TW201823313A (zh) * 2016-11-03 2018-07-01 美商富士軟片電子材料美國股份有限公司 聚醯亞胺
JP2020514422A (ja) * 2016-11-03 2020-05-21 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド ポリイミド
WO2020189358A1 (ja) * 2019-03-15 2020-09-24 富士フイルム株式会社 硬化性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、半導体デバイス、及び、ポリマー前駆体

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117903685A (zh) * 2024-01-10 2024-04-19 中国地质大学（北京） 一种环境友好型聚酰亚胺绝缘漆及其制备方法与应用
CN117903685B (zh) * 2024-01-10 2025-10-17 中国地质大学（北京） 一种环境友好型聚酰亚胺绝缘漆及其制备方法与应用

Also Published As

Publication number Publication date
TW202307084A (zh) 2023-02-16
WO2022210532A1 (ja) 2022-10-06
KR102864324B1 (ko) 2025-09-25
KR20230152112A (ko) 2023-11-02
JPWO2022210532A1 (https=) 2022-10-06

Similar Documents

Publication Publication Date Title
CN116685622A (zh) 树脂组合物、固化物、层叠体、固化物的制造方法及半导体器件
CN116648313B (zh) 树脂组合物、固化物、层叠体、固化物的制造方法及半导体器件
CN117157344A (zh) 树脂组合物、固化物、层叠体、固化物的制造方法及半导体器件、以及聚酰亚胺前驱体及其制造方法
CN115989457A (zh) 固化物的制造方法、层叠体的制造方法及半导体器件的制造方法
CN117881745A (zh) 树脂组合物、固化物、层叠体、固化物的制造方法、层叠体的制造方法、半导体器件的制造方法及半导体器件、以及化合物
CN119937247A (zh) 固化性树脂组合物、树脂膜、固化膜、层叠体、固化膜的制造方法及半导体器件
CN115729037A (zh) 固化物、层叠体、半导体器件及它们的制造方法、树脂组合物和化合物
KR102627683B1 (ko) 경화물의 제조 방법, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법, 및, 처리액
TW202242002A (zh) 樹脂組成物、硬化物、積層體、硬化物的製造方法、半導體裝置及樹脂
CN117099045A (zh) 负型感光性树脂组合物、固化物、层叠体、固化物的制造方法及半导体器件
CN117120512A (zh) 树脂组合物、固化物、层叠体、固化物的制造方法及半导体器件、以及聚酰亚胺前驱体
CN117083346A (zh) 树脂组合物、固化物、层叠体、固化物的制造方法及半导体器件
CN117120550A (zh) 树脂组合物、固化物、层叠体、固化物的制造方法及半导体器件
CN116724071A (zh) 树脂组合物、固化物、层叠体、固化物的制造方法及半导体器件
CN114730132B (zh) 固化性树脂组合物、固化膜、层叠体、固化膜的制造方法、半导体器件及树脂
CN116075777A (zh) 固化物的制造方法、层叠体的制造方法及半导体器件的制造方法
CN117836715A (zh) 树脂组合物、固化物、层叠体、固化物的制造方法、层叠体的制造方法、半导体器件的制造方法及半导体器件、以及碱产生剂
CN117836916A (zh) 固化物的制造方法、层叠体的制造方法及半导体器件的制造方法以及处理液及树脂组合物
CN117940516A (zh) 树脂组合物、固化物、层叠体、固化物的制造方法、层叠体的制造方法、半导体器件的制造方法及半导体器件
TW202305040A (zh) 硬化物的製造方法、積層體的製造方法、半導體裝置的製造方法、樹脂組成物、硬化物、積層體及半導體裝置
CN116888217B (zh) 树脂组合物、固化物、层叠体、固化物的制造方法及半导体器件以及碱产生剂
CN116888187B (zh) 树脂组合物、固化物、层叠体、固化物的制造方法及半导体器件、以及环化树脂的前驱体
CN117120513A (zh) 树脂组合物、固化物、层叠体、固化物的制造方法及半导体器件、以及碱产生剂
CN117295794A (zh) 树脂组合物、固化物、层叠体、固化物的制造方法及半导体器件、以及化合物
CN117642442A (zh) 树脂组合物、固化物、层叠体、固化物的制造方法、层叠体的制造方法、半导体器件的制造方法及半导体器件

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination