CN116922594B - Cutting method for reducing chromatic aberration caused by bonding wires after breakage of crystalline silicon slice - Google Patents

Cutting method for reducing chromatic aberration caused by bonding wires after breakage of crystalline silicon slice Download PDF

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Publication number
CN116922594B
CN116922594B CN202310878418.1A CN202310878418A CN116922594B CN 116922594 B CN116922594 B CN 116922594B CN 202310878418 A CN202310878418 A CN 202310878418A CN 116922594 B CN116922594 B CN 116922594B
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wire
welding
cutting
changing
speed
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CN116922594A (en
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葛灵杰
邵学峰
孙守振
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Jiangsu Shuangjing New Energy Technology Co ltd
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Jiangsu Shuangjing New Energy Technology Co ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention discloses a cutting method for reducing chromatic aberration caused by welding wires after breakage of crystalline silicon slices, which specifically comprises the following steps: s1, welding spots by using a spot welder after wire breakage, and hoisting the welding spots after welding, and testing the quality of the welding spots by using a 500g weight; s2, winding welding spots into a wire mesh, directly cutting after changing a cutting process, wherein the cutting process changing method specifically comprises wire inlet method changing and bench speed and wire speed changing; s3, measuring the distance between the welding spot and the reel, calculating the total incoming line length, and reducing the wire winding tension to 1.5N before the welding spot enters the reel by 500 m; s4, after the welding spot enters the wire reel, the invention is started normally by using the original process, and relates to the technical field of crystal silicon slicing. According to the cutting method for reducing chromatic aberration caused by welding lines after wire breakage of the crystal silicon slice, the cutting conditions before and after wire breakage are completely consistent with those before wire breakage, the technology after modification and the original technology are both circularly and reciprocally cut, the straight cutting lines of welding spots are identical to the original cutting lines, and the treatment chromatic aberration is obviously reduced.

Description

Cutting method for reducing chromatic aberration caused by bonding wires after breakage of crystalline silicon slice
Technical Field
The invention relates to the technical field of crystal silicon slicing, in particular to a cutting method for reducing chromatic aberration caused by bonding wires after wire breakage of crystal silicon slicing.
Background
In the photovoltaic silicon slicing industry, as the wire diameter of a steel wire gradually decreases from the initial 80um to the current 30um, the breakage rate is increased from the initial 5% to the current 10% -15%, after wire breakage, a spot welder is needed to weld wires or lift a silicon rod to press the rod, and then the silicon rod is cut again, and due to inconsistent cutting conditions before and after wire breakage and bar pressing, the probability of chromatic aberration is high. In the prior art, after the low-level wire breakage, a wire net is lifted up from a silicon rod, and after rewiring, the silicon rod is pressed down to a cutting position again for cutting again; after wire breakage, the wire breakage is welded again by using a spot welder, and after welding, welding spots are manually run out of a wire mesh and cut again, wherein the specific method comprises the following steps:
1. the spot welder welds broken line joint, and the broken line joint is observed to have no obvious skew and blackening
2. After the welded joint is wound into a wire net by using a wire winding wheel, setting the table speed to be 0.1mm/min, the wire speed to be 30m/s, and running the welding spot to the wire winding wheel in a one-way running way;
3. after the welding spot runs to the wire wheel, the wire is normally started after the original cutting depth is changed by one step of circulating wire quantity, and the circulating wire quantity is 570m and 420m.
This cutting method is prone to the following problems:
1. the unidirectional welding spot is a unidirectional wiring, normal cutting is bidirectional cutting, and the inconsistent cutting direction leads to inconsistent cutting textures of the silicon wafer to form chromatic aberration;
2. the steel wires in the crystal bar after unidirectional welding point running are inconsistent with the steel wires before wire breakage, and the steel wire cutting capability variation difference before and after wire breakage is large, so that chromatic aberration is formed.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a cutting method for reducing chromatic aberration caused by bonding wires after wire breakage of crystal silicon slices, and solves the problem that chromatic aberration is easily caused by bonding wires after wire breakage of crystal silicon slices.
In order to achieve the above purpose, the invention is realized by the following technical scheme: a cutting method for reducing chromatic aberration caused by bonding wires after wire breakage of crystal silicon slices specifically comprises the following steps:
s1, welding spots by using a spot welder after wire breakage, and hoisting the welding spots after welding, and testing the quality of the welding spots by using a 500g weight;
s2, winding welding spots into a wire mesh, directly cutting after changing a cutting process, wherein the cutting process changing method specifically comprises wire inlet method changing and bench speed and wire speed changing;
s3, measuring the distance between the welding spot and the reel, calculating the total incoming line length, and reducing the wire winding tension to 1.5N before the welding spot enters the reel by 500 m;
s4, after the welding spot enters the wire wheel, the wire wheel is normally started by using the original process.
Preferably, in the step S1, the method for testing quality of the welding spot specifically includes: and (5) hanging the 500g weight at the welding point to be suspended, shaking the weight for 5 times left and right, and taking the welding point as qualified if the welding point is continuous.
Preferably, in the step S2, the line feeding method is changed to incrementally feed lines in a small circulation mode, so as to solve chromatic aberration caused by large circulation amount, and the method specifically comprises the following steps:
step 1, converting a 400m loop of a first stepping wire into a 100m loop, and circulating for 2 times;
step 2, converting a 500m loop of the second stepping wire into a 200m loop, and circulating for 2 times;
and step 3, converting the third stepping line 600m into a line 200m, and circulating for 3 times.
Preferably, in the step S2, the method modification of the table speed and the line speed is specifically: the first step is to change the original process to 80% of the speed; step two, changing the original process to 90% of the speed; and the third part restores the original line speed, and the line speed is set according to 80% of the original line speed.
Advantageous effects
The invention provides a cutting method for reducing chromatic aberration caused by bonding wires after wire breakage of a crystal silicon slice. Compared with the prior art, the method has the following beneficial effects:
1. according to the cutting method for reducing chromatic aberration caused by welding lines after wire breakage of the crystal silicon slice, the cutting conditions before and after wire breakage are completely consistent with those before wire breakage, the technology after modification and the original technology are both circularly and reciprocally cut, the straight cutting lines of welding spots are identical to the original cutting lines, and the treatment chromatic aberration is obviously reduced.
2. According to the cutting method for reducing chromatic aberration caused by the bonding wires after wire breakage of the crystalline silicon slice, if the secondary wire breakage is performed, the same method is adopted to treat the broken wires after wire breakage, and meanwhile, the process chromatic aberration is not generated because the process conditions before and after the secondary wire breakage are not obviously changed.
Drawings
FIG. 1 is a flow chart of the cutting method of the present invention;
FIG. 2 is a graph showing the color difference effect of the press bar of the present invention;
FIG. 3 is a graph of the effect of non-solder joint straight cut according to the present invention;
FIG. 4 is a graph showing the effect of straight cutting of welding spots according to the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1-4, the present invention provides two embodiments: the cutting method for reducing chromatic aberration caused by bonding wires after wire breakage of the crystal silicon slice specifically comprises the following steps:
example 1
S1, welding spots by using a spot welder after wire breakage, and hoisting the welding spots after welding, and testing the quality of the welding spots by using a 500g weight;
s2, winding welding spots into a wire mesh, directly cutting after changing a cutting process, wherein the cutting process changing method specifically comprises wire inlet method changing and bench speed and wire speed changing;
s3, measuring the distance between the welding spot and the reel, calculating the total incoming line length, and reducing the wire winding tension to 1.5N before the welding spot enters the reel by 500 m;
s4, after the welding spots enter the wire wheel, normally starting up by using the original process
Example 2
S1, welding spots by using a spot welder after wire breakage, and hoisting the welding spots after welding, and testing the quality of the welding spots by using a 500g weight;
s2, winding welding spots into a wire mesh, directly cutting after changing a cutting process, wherein the cutting process changing method specifically comprises wire inlet method changing and bench speed and wire speed changing;
s3, measuring the distance between the welding spot and the reel, calculating the total incoming line length, and reducing the wire winding tension to 1.5N before the welding spot enters the reel by 500 m;
s4, after the welding spot enters the wire wheel, the wire wheel is normally started by using the original process.
In the invention, in the step S1, the welding spot quality testing method specifically comprises the following steps: and (5) hanging the 500g weight at the welding point to be suspended, shaking the weight for 5 times left and right, and taking the welding point as qualified if the welding point is continuous.
In the invention, in the step S2, the line incoming method is changed to gradually increase the line incoming in a small circulation mode, so as to solve the chromatic aberration caused by large circulation amount, and the method specifically comprises the following steps:
step 1, converting a 400m loop of a first stepping wire into a 100m loop, and circulating for 2 times;
step 2, converting a 500m loop of the second stepping wire into a 200m loop, and circulating for 2 times;
and step 3, converting the third stepping line 600m into a line 200m, and circulating for 3 times.
In the invention, in the step S2, the method for changing the table speed and the line speed is specifically as follows: the first step is to change the original process to 80% of the speed; step two, changing the original process to 90% of the speed; and the third part restores the original line speed, and the line speed is set according to 80% of the original line speed.
And all that is not described in detail in this specification is well known to those skilled in the art.
Compared with the embodiment 1, the embodiment 2 has the advantages that the cutting conditions before and after wire breakage are completely consistent with those before wire breakage, the technology after modification and the original technology are both circularly and reciprocally cut, the straight cutting lines of welding spots are identical to the original cutting lines, and the treatment chromatic aberration is obviously reduced. If the secondary wire breakage is carried out, the treatment of the wire breakage by the same method can reduce the color difference of the wire breakage treatment, and meanwhile, the process conditions before and after the secondary wire breakage have no obvious change, so that the process color difference can not be generated.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (2)

1. A cutting method for reducing chromatic aberration caused by bonding wires after wire breakage of crystal silicon slices is characterized by comprising the following steps of: the method specifically comprises the following steps:
s1, welding spots by using a spot welder after wire breakage, and hoisting the welding spots after welding, and testing the quality of the welding spots by using a 500g weight;
s2, winding welding spots into a wire mesh, directly cutting after changing a cutting process, wherein the cutting process changing method specifically comprises wire inlet method changing and bench speed and wire speed changing;
s3, measuring the distance between the welding spot and the reel, calculating the total incoming line length, and reducing the wire winding tension to 1.5N before the welding spot enters the reel by 500 m;
s4, normally starting up the welding spot by using the original process after entering the wire wheel;
in the step S2, the line incoming method is changed to incrementally incoming line in a small circulation mode, so that chromatic aberration caused by large circulation amount is solved, and the method specifically comprises the following steps:
step 1, converting a 400m loop of a first stepping wire into a 100m loop, and circulating for 2 times;
step 2, converting a 500m loop of the second stepping wire into a 200m loop, and circulating for 2 times;
step 3, converting the 600m return line of the third stepping line into the 200m return line, and circulating for 3 times;
in the step S2, the method for changing the table speed and the line speed is specifically as follows: the first step is to change the original process to 80% of the speed; step two, changing the original process to 90% of the speed; and thirdly, recovering the original line speed, wherein the line speed is set according to 80% of the original line speed.
2. The method for cutting the crystalline silicon slice to reduce chromatic aberration caused by bonding wires after wire breakage according to claim 1, wherein the method comprises the following steps: in the step S1, the welding spot quality testing method specifically comprises the following steps: and (5) hanging the 500g weight at the welding point to be suspended, shaking the weight for 5 times left and right, and taking the welding point as qualified if the welding point is continuous.
CN202310878418.1A 2023-07-18 2023-07-18 Cutting method for reducing chromatic aberration caused by bonding wires after breakage of crystalline silicon slice Active CN116922594B (en)

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Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991002617A1 (en) * 1989-08-25 1991-03-07 Fanuc Ltd Method of repairing broken wire on wire cut electric spark machine
JP2009184023A (en) * 2008-02-01 2009-08-20 Noritake Super Abrasive Co Ltd Workpiece cutting method using wire saw and wire saw cutting device
CN102114560A (en) * 2010-01-04 2011-07-06 发那科株式会社 Wire break repairing device for wire-cut electric discharge machine
JP2013099795A (en) * 2011-11-07 2013-05-23 Jfe Steel Corp Semiconductor ingot cutting method, fixed abrasive grain wire saw, and wafer
WO2014108956A1 (en) * 2013-01-10 2014-07-17 信越半導体株式会社 Method for resuming wire saw operation
JP2015112701A (en) * 2013-12-13 2015-06-22 信越半導体株式会社 Operation resumption method of wire saw
JP2015222766A (en) * 2014-05-22 2015-12-10 新日鐵住金株式会社 Wire processing method of silicon carbide single crystal ingot
CN108501232A (en) * 2018-05-31 2018-09-07 扬州续笙新能源科技有限公司 A kind of Buddha's warrior attendant wire-electrode cutting device and cutting method for polysilicon
CN211467023U (en) * 2019-12-16 2020-09-11 天津美芯电子科技有限公司 Take broken string alarming function's multi-thread slicer pay-off and take-up device
CN115555752A (en) * 2022-10-12 2023-01-03 苏州协鑫光伏科技有限公司 Method for improving chromatic aberration of broken wire and bonding wire
CN115674468A (en) * 2022-08-31 2023-02-03 麦斯克电子材料股份有限公司 Re-cutting process after diamond wire cutting and wire breaking of 8-inch semiconductor silicon crystal bar
CN115842070A (en) * 2022-12-30 2023-03-24 广东金湾高景太阳能科技有限公司 Method for improving line breaking step chromatic aberration of solar silicon wafer

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH696806A5 (en) * 2003-11-18 2007-12-14 Walter Ebner wire saw reciprocates.
JP6318637B2 (en) * 2014-01-17 2018-05-09 日立金属株式会社 Cutting method of high hardness material with multi-wire saw

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991002617A1 (en) * 1989-08-25 1991-03-07 Fanuc Ltd Method of repairing broken wire on wire cut electric spark machine
JP2009184023A (en) * 2008-02-01 2009-08-20 Noritake Super Abrasive Co Ltd Workpiece cutting method using wire saw and wire saw cutting device
CN102114560A (en) * 2010-01-04 2011-07-06 发那科株式会社 Wire break repairing device for wire-cut electric discharge machine
JP2013099795A (en) * 2011-11-07 2013-05-23 Jfe Steel Corp Semiconductor ingot cutting method, fixed abrasive grain wire saw, and wafer
WO2014108956A1 (en) * 2013-01-10 2014-07-17 信越半導体株式会社 Method for resuming wire saw operation
JP2015112701A (en) * 2013-12-13 2015-06-22 信越半導体株式会社 Operation resumption method of wire saw
JP2015222766A (en) * 2014-05-22 2015-12-10 新日鐵住金株式会社 Wire processing method of silicon carbide single crystal ingot
CN108501232A (en) * 2018-05-31 2018-09-07 扬州续笙新能源科技有限公司 A kind of Buddha's warrior attendant wire-electrode cutting device and cutting method for polysilicon
CN211467023U (en) * 2019-12-16 2020-09-11 天津美芯电子科技有限公司 Take broken string alarming function's multi-thread slicer pay-off and take-up device
CN115674468A (en) * 2022-08-31 2023-02-03 麦斯克电子材料股份有限公司 Re-cutting process after diamond wire cutting and wire breaking of 8-inch semiconductor silicon crystal bar
CN115555752A (en) * 2022-10-12 2023-01-03 苏州协鑫光伏科技有限公司 Method for improving chromatic aberration of broken wire and bonding wire
CN115842070A (en) * 2022-12-30 2023-03-24 广东金湾高景太阳能科技有限公司 Method for improving line breaking step chromatic aberration of solar silicon wafer

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