CN116922594A - Cutting method for reducing chromatic aberration caused by bonding wires after breakage of crystalline silicon slice - Google Patents
Cutting method for reducing chromatic aberration caused by bonding wires after breakage of crystalline silicon slice Download PDFInfo
- Publication number
- CN116922594A CN116922594A CN202310878418.1A CN202310878418A CN116922594A CN 116922594 A CN116922594 A CN 116922594A CN 202310878418 A CN202310878418 A CN 202310878418A CN 116922594 A CN116922594 A CN 116922594A
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- wire
- welding
- cutting
- chromatic aberration
- changing
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- 238000000034 method Methods 0.000 title claims abstract description 66
- 238000005520 cutting process Methods 0.000 title claims abstract description 51
- 230000004075 alteration Effects 0.000 title claims abstract description 27
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 7
- 238000003466 welding Methods 0.000 claims abstract description 65
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 230000008569 process Effects 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 238000004804 winding Methods 0.000 claims abstract description 12
- 238000012360 testing method Methods 0.000 claims abstract description 6
- 230000008859 change Effects 0.000 claims description 4
- 238000012372 quality testing Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 6
- 230000004048 modification Effects 0.000 abstract description 5
- 238000012986 modification Methods 0.000 abstract description 5
- 229910000831 Steel Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a cutting method for reducing chromatic aberration caused by welding wires after breakage of crystalline silicon slices, which specifically comprises the following steps: s1, welding spots by using a spot welder after wire breakage, and hoisting the welding spots after welding, and testing the quality of the welding spots by using a 500g weight; s2, winding welding spots into a wire mesh, directly cutting after changing a cutting process, wherein the cutting process changing method specifically comprises wire inlet method changing and bench speed and wire speed changing; s3, measuring the distance between the welding spot and the reel, calculating the total incoming line length, and reducing the wire winding tension to 1.5N before the welding spot enters the reel by 500 m; s4, after the welding spot enters the wire reel, the invention is started normally by using the original process, and relates to the technical field of crystal silicon slicing. According to the cutting method for reducing chromatic aberration caused by welding lines after wire breakage of the crystal silicon slice, the cutting conditions before and after wire breakage are completely consistent with those before wire breakage, the technology after modification and the original technology are both circularly and reciprocally cut, the straight cutting lines of welding spots are identical to the original cutting lines, and the treatment chromatic aberration is obviously reduced.
Description
Technical Field
The invention relates to the technical field of crystal silicon slicing, in particular to a cutting method for reducing chromatic aberration caused by bonding wires after wire breakage of crystal silicon slicing.
Background
In the photovoltaic silicon slicing industry, as the wire diameter of a steel wire gradually decreases from the initial 80um to the current 30um, the breakage rate is increased from the initial 5% to the current 10% -15%, after wire breakage, a spot welder is needed to weld wires or lift a silicon rod to press the rod, and then the silicon rod is cut again, and due to inconsistent cutting conditions before and after wire breakage and bar pressing, the probability of chromatic aberration is high. In the prior art, after the low-level wire breakage, a wire net is lifted up from a silicon rod, and after rewiring, the silicon rod is pressed down to a cutting position again for cutting again; after wire breakage, the wire breakage is welded again by using a spot welder, and after welding, welding spots are manually run out of a wire mesh and cut again, wherein the specific method comprises the following steps:
1. the spot welder welds broken line joint, and the broken line joint is observed to have no obvious skew and blackening
2. After the welded joint is wound into a wire net by using a wire winding wheel, setting the table speed to be 0.1mm/min, the wire speed to be 30m/s, and running the welding spot to the wire winding wheel in a one-way running way;
3. after the welding spot runs to the wire wheel, the wire is normally started after the original cutting depth is changed by one step of circulating wire quantity, and the circulating wire quantity is 570m and 420m.
This cutting method is prone to the following problems:
1. the unidirectional welding spot is a unidirectional wiring, normal cutting is bidirectional cutting, and the inconsistent cutting direction leads to inconsistent cutting textures of the silicon wafer to form chromatic aberration;
2. the steel wires in the crystal bar after unidirectional welding point running are inconsistent with the steel wires before wire breakage, and the steel wire cutting capability variation difference before and after wire breakage is large, so that chromatic aberration is formed.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a cutting method for reducing chromatic aberration caused by bonding wires after wire breakage of crystal silicon slices, and solves the problem that chromatic aberration is easily caused by bonding wires after wire breakage of crystal silicon slices.
In order to achieve the above purpose, the invention is realized by the following technical scheme: a cutting method for reducing chromatic aberration caused by bonding wires after wire breakage of crystal silicon slices specifically comprises the following steps:
s1, welding spots by using a spot welder after wire breakage, and hoisting the welding spots after welding, and testing the quality of the welding spots by using a 500g weight;
s2, winding welding spots into a wire mesh, directly cutting after changing a cutting process, wherein the cutting process changing method specifically comprises wire inlet method changing and bench speed and wire speed changing;
s3, measuring the distance between the welding spot and the reel, calculating the total incoming line length, and reducing the wire winding tension to 1.5N before the welding spot enters the reel by 500 m;
s4, after the welding spot enters the wire wheel, the wire wheel is normally started by using the original process.
Preferably, in the step S1, the method for testing quality of the welding spot specifically includes: and (5) hanging the 500g weight at the welding point to be suspended, shaking the weight for 5 times left and right, and taking the welding point as qualified if the welding point is continuous.
Preferably, in the step S2, the line feeding method is changed to incrementally feed lines in a small circulation mode, so as to solve chromatic aberration caused by large circulation amount, and the method specifically comprises the following steps:
step 1, converting a 400m loop of a first stepping wire into a 100m loop, and circulating for 2 times;
step 2, converting a 500m loop of the second stepping wire into a 200m loop, and circulating for 2 times;
and step 3, converting the third stepping line 600m into a line 200m, and circulating for 3 times.
Preferably, in the step S2, the method modification of the table speed and the line speed is specifically: the first step is to change the original process to 80% of the speed; step two, changing the original process to 90% of the speed; and the third part restores the original line speed, and the line speed is set according to 80% of the original line speed.
Advantageous effects
The invention provides a cutting method for reducing chromatic aberration caused by bonding wires after wire breakage of a crystal silicon slice. Compared with the prior art, the method has the following beneficial effects:
1. according to the cutting method for reducing chromatic aberration caused by welding lines after wire breakage of the crystal silicon slice, the cutting conditions before and after wire breakage are completely consistent with those before wire breakage, the technology after modification and the original technology are both circularly and reciprocally cut, the straight cutting lines of welding spots are identical to the original cutting lines, and the treatment chromatic aberration is obviously reduced.
2. According to the cutting method for reducing chromatic aberration caused by the bonding wires after wire breakage of the crystalline silicon slice, if the secondary wire breakage is performed, the same method is adopted to treat the broken wires after wire breakage, and meanwhile, the process chromatic aberration is not generated because the process conditions before and after the secondary wire breakage are not obviously changed.
Drawings
FIG. 1 is a flow chart of the cutting method of the present invention;
FIG. 2 is a graph showing the color difference effect of the press bar of the present invention;
FIG. 3 is a graph of the effect of non-solder joint straight cut according to the present invention;
FIG. 4 is a graph showing the effect of straight cutting of welding spots according to the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1-4, the present invention provides two embodiments: the cutting method for reducing chromatic aberration caused by bonding wires after wire breakage of the crystal silicon slice specifically comprises the following steps:
example 1
S1, welding spots by using a spot welder after wire breakage, and hoisting the welding spots after welding, and testing the quality of the welding spots by using a 500g weight;
s2, winding welding spots into a wire mesh, directly cutting after changing a cutting process, wherein the cutting process changing method specifically comprises wire inlet method changing and bench speed and wire speed changing;
s3, measuring the distance between the welding spot and the reel, calculating the total incoming line length, and reducing the wire winding tension to 1.5N before the welding spot enters the reel by 500 m;
s4, after the welding spots enter the wire wheel, normally starting up by using the original process
Example 2
S1, welding spots by using a spot welder after wire breakage, and hoisting the welding spots after welding, and testing the quality of the welding spots by using a 500g weight;
s2, winding welding spots into a wire mesh, directly cutting after changing a cutting process, wherein the cutting process changing method specifically comprises wire inlet method changing and bench speed and wire speed changing;
s3, measuring the distance between the welding spot and the reel, calculating the total incoming line length, and reducing the wire winding tension to 1.5N before the welding spot enters the reel by 500 m;
s4, after the welding spot enters the wire wheel, the wire wheel is normally started by using the original process.
In the invention, in the step S1, the welding spot quality testing method specifically comprises the following steps: and (5) hanging the 500g weight at the welding point to be suspended, shaking the weight for 5 times left and right, and taking the welding point as qualified if the welding point is continuous.
In the invention, in the step S2, the line incoming method is changed to gradually increase the line incoming in a small circulation mode, so as to solve the chromatic aberration caused by large circulation amount, and the method specifically comprises the following steps:
step 1, converting a 400m loop of a first stepping wire into a 100m loop, and circulating for 2 times;
step 2, converting a 500m loop of the second stepping wire into a 200m loop, and circulating for 2 times;
and step 3, converting the third stepping line 600m into a line 200m, and circulating for 3 times.
In the invention, in the step S2, the method for changing the table speed and the line speed is specifically as follows: the first step is to change the original process to 80% of the speed; step two, changing the original process to 90% of the speed; and the third part restores the original line speed, and the line speed is set according to 80% of the original line speed.
And all that is not described in detail in this specification is well known to those skilled in the art.
Compared with the embodiment 1, the embodiment 2 has the advantages that the cutting conditions before and after wire breakage are completely consistent with those before wire breakage, the technology after modification and the original technology are both circularly and reciprocally cut, the straight cutting lines of welding spots are identical to the original cutting lines, and the treatment chromatic aberration is obviously reduced. If the secondary wire breakage is carried out, the treatment of the wire breakage by the same method can reduce the color difference of the wire breakage treatment, and meanwhile, the process conditions before and after the secondary wire breakage have no obvious change, so that the process color difference can not be generated.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (4)
1. A cutting method for reducing chromatic aberration caused by bonding wires after wire breakage of crystal silicon slices is characterized by comprising the following steps of: the method specifically comprises the following steps:
s1, welding spots by using a spot welder after wire breakage, and hoisting the welding spots after welding, and testing the quality of the welding spots by using a 500g weight;
s2, winding welding spots into a wire mesh, directly cutting after changing a cutting process, wherein the cutting process changing method specifically comprises wire inlet method changing and bench speed and wire speed changing;
s3, measuring the distance between the welding spot and the reel, calculating the total incoming line length, and reducing the wire winding tension to 1.5N before the welding spot enters the reel by 500 m;
s4, after the welding spot enters the wire wheel, the wire wheel is normally started by using the original process.
2. The method for cutting the crystalline silicon slice to reduce chromatic aberration caused by bonding wires after wire breakage according to claim 1, wherein the method comprises the following steps: in the step S1, the welding spot quality testing method specifically comprises the following steps: and (5) hanging the 500g weight at the welding point to be suspended, shaking the weight for 5 times left and right, and taking the welding point as qualified if the welding point is continuous.
3. The method for cutting the crystalline silicon slice to reduce chromatic aberration caused by bonding wires after wire breakage according to claim 1, wherein the method comprises the following steps: in the step S2, the line incoming method is changed to incrementally incoming line in a small circulation mode, so that chromatic aberration caused by large circulation amount is solved, and the method specifically comprises the following steps:
step 1, converting a 400m loop of a first stepping wire into a 100m loop, and circulating for 2 times;
step 2, converting a 500m loop of the second stepping wire into a 200m loop, and circulating for 2 times;
and step 3, converting the third stepping line 600m into a line 200m, and circulating for 3 times.
4. The method for cutting the crystalline silicon slice to reduce chromatic aberration caused by bonding wires after wire breakage according to claim 1, wherein the method comprises the following steps: in the step S2, the method for changing the table speed and the line speed is specifically as follows: the first step is to change the original process to 80% of the speed; step two, changing the original process to 90% of the speed; and the third part restores the original line speed, and the line speed is set according to 80% of the original line speed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310878418.1A CN116922594B (en) | 2023-07-18 | 2023-07-18 | Cutting method for reducing chromatic aberration caused by bonding wires after breakage of crystalline silicon slice |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310878418.1A CN116922594B (en) | 2023-07-18 | 2023-07-18 | Cutting method for reducing chromatic aberration caused by bonding wires after breakage of crystalline silicon slice |
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| Publication Number | Publication Date |
|---|---|
| CN116922594A true CN116922594A (en) | 2023-10-24 |
| CN116922594B CN116922594B (en) | 2024-04-02 |
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|---|---|---|---|
| CN202310878418.1A Active CN116922594B (en) | 2023-07-18 | 2023-07-18 | Cutting method for reducing chromatic aberration caused by bonding wires after breakage of crystalline silicon slice |
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| CN115674468A (en) * | 2022-08-31 | 2023-02-03 | 麦斯克电子材料股份有限公司 | Re-cutting process after diamond wire cutting and wire breaking of 8-inch semiconductor silicon crystal bar |
| CN115842070A (en) * | 2022-12-30 | 2023-03-24 | 广东金湾高景太阳能科技有限公司 | Method for improving line breaking step chromatic aberration of solar silicon wafer |
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2023
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Patent Citations (14)
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|---|---|---|---|---|
| WO1991002617A1 (en) * | 1989-08-25 | 1991-03-07 | Fanuc Ltd | Method of repairing broken wire on wire cut electric spark machine |
| US20050103320A1 (en) * | 2003-11-18 | 2005-05-19 | Walter Ebner | Reciprocating wire saw |
| JP2009184023A (en) * | 2008-02-01 | 2009-08-20 | Noritake Super Abrasive Co Ltd | Workpiece cutting method using wire saw and wire saw cutting device |
| CN102114560A (en) * | 2010-01-04 | 2011-07-06 | 发那科株式会社 | Wire break repairing device for wire-cut electric discharge machine |
| JP2013099795A (en) * | 2011-11-07 | 2013-05-23 | Jfe Steel Corp | Semiconductor ingot cutting method, fixed abrasive grain wire saw, and wafer |
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| Publication number | Publication date |
|---|---|
| CN116922594B (en) | 2024-04-02 |
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