CN116913844A - 静电卡盘用供电部和静电卡盘 - Google Patents
静电卡盘用供电部和静电卡盘 Download PDFInfo
- Publication number
- CN116913844A CN116913844A CN202310330865.3A CN202310330865A CN116913844A CN 116913844 A CN116913844 A CN 116913844A CN 202310330865 A CN202310330865 A CN 202310330865A CN 116913844 A CN116913844 A CN 116913844A
- Authority
- CN
- China
- Prior art keywords
- substrate
- main component
- particles
- electrostatic chuck
- volume
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002245 particle Substances 0.000 claims abstract description 188
- 239000000758 substrate Substances 0.000 claims abstract description 109
- 239000002131 composite material Substances 0.000 claims abstract description 11
- 239000011159 matrix material Substances 0.000 claims abstract description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 17
- 238000000034 method Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 7
- 238000005325 percolation Methods 0.000 description 6
- 239000012212 insulator Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010191 image analysis Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- XTDAIYZKROTZLD-UHFFFAOYSA-N boranylidynetantalum Chemical compound [Ta]#B XTDAIYZKROTZLD-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
- G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/40—Metallic constituents or additives not added as binding phase
- C04B2235/404—Refractory metals
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022068461A JP7100778B1 (ja) | 2022-04-18 | 2022-04-18 | 静電チャック用給電部及び静電チャック |
| JP2022-068461 | 2022-04-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116913844A true CN116913844A (zh) | 2023-10-20 |
Family
ID=82399199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310330865.3A Pending CN116913844A (zh) | 2022-04-18 | 2023-03-30 | 静电卡盘用供电部和静电卡盘 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7100778B1 (ja) |
| KR (1) | KR102691941B1 (ja) |
| CN (1) | CN116913844A (ja) |
| TW (1) | TWI843424B (ja) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004055608A (ja) | 2002-07-16 | 2004-02-19 | Sumitomo Osaka Cement Co Ltd | 電極内蔵型サセプタ |
| JP6155922B2 (ja) | 2013-07-12 | 2017-07-05 | 住友大阪セメント株式会社 | 静電チャック装置 |
| JP6531693B2 (ja) | 2016-03-30 | 2019-06-19 | 住友大阪セメント株式会社 | 静電チャック装置、静電チャック装置の製造方法 |
| JP6697819B2 (ja) * | 2016-04-21 | 2020-05-27 | 三菱重工業株式会社 | 複合材料成形装置及び複合材料成形方法 |
| KR102543049B1 (ko) | 2017-02-23 | 2023-06-14 | 스미토모 오사카 세멘토 가부시키가이샤 | 복합 소결체, 정전 척 부재, 및 정전 척 장치 |
| JP7063326B2 (ja) | 2017-03-30 | 2022-05-09 | 住友大阪セメント株式会社 | 複合焼結体、静電チャック部材、静電チャック装置および複合焼結体の製造方法 |
| KR20200133744A (ko) | 2018-03-23 | 2020-11-30 | 스미토모 오사카 세멘토 가부시키가이샤 | 정전 척 장치 및 정전 척 장치의 제조 방법 |
| JP6988999B2 (ja) * | 2018-03-30 | 2022-01-05 | 住友大阪セメント株式会社 | セラミックス基体およびサセプタ |
-
2022
- 2022-04-18 JP JP2022068461A patent/JP7100778B1/ja active Active
-
2023
- 2023-01-31 TW TW112103223A patent/TWI843424B/zh active
- 2023-02-17 KR KR1020230021320A patent/KR102691941B1/ko active IP Right Grant
- 2023-03-30 CN CN202310330865.3A patent/CN116913844A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2023158548A (ja) | 2023-10-30 |
| JP7100778B1 (ja) | 2022-07-13 |
| KR20230148735A (ko) | 2023-10-25 |
| KR102691941B1 (ko) | 2024-08-06 |
| TW202345170A (zh) | 2023-11-16 |
| TWI843424B (zh) | 2024-05-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5998320A (en) | Aluminum nitride sintered body, metal including member, electrostatic chuck, method of producing aluminum nitride sintered body, and method of producing metal including member | |
| KR100618530B1 (ko) | 정전 척과 그 제조 방법 및 알루미나 소결 부재와 그 제조방법 | |
| CN108495829B (zh) | 陶瓷材料及静电卡盘装置 | |
| US6272002B1 (en) | Electrostatic holding apparatus and method of producing the same | |
| KR100756776B1 (ko) | 질화 알루미늄 접합체 및 그의 제조 방법 | |
| KR102675440B1 (ko) | 정전 척 장치 및 그 제조 방법 | |
| US6122159A (en) | Electrostatic holding apparatus | |
| US20200404747A1 (en) | Holding device and method of manufacturing holding device | |
| US20200075383A1 (en) | Ceramics substrate and electrostatic chuck | |
| JPH07297265A (ja) | 静電チャック | |
| KR100553444B1 (ko) | 서셉터 및 그 제조방법 | |
| CN113874336B (zh) | 复合烧结体、静电卡盘部件、静电卡盘装置及复合烧结体的制造方法 | |
| JP2020043336A (ja) | セラミックス基板、静電チャック、静電チャックの製造方法 | |
| CN111886213B (zh) | 复合烧结体、静电卡盘部件、静电卡盘装置及复合烧结体的制造方法 | |
| JP6798640B2 (ja) | 静電チャック装置および静電チャック装置の製造方法 | |
| US7633738B2 (en) | Electrostatic chuck and manufacturing method thereof | |
| CN113903698A (zh) | 陶瓷结构、静电吸盘以及基板固定装置 | |
| CN116913844A (zh) | 静电卡盘用供电部和静电卡盘 | |
| KR20030040049A (ko) | 전극 내장형 서셉터 및 그 제조 방법 | |
| JP2002313900A (ja) | 基板保持構造体および基板処理装置 | |
| US20210246071A1 (en) | Ceramic substrate and electrostatic chuck | |
| WO2023054137A1 (ja) | 配線基板 | |
| JP4342634B2 (ja) | 回路基板 | |
| JPH08213760A (ja) | キャパシタ内蔵基板 | |
| JP2022133003A (ja) | 複合導電性部材、試料保持具、静電チャック装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |