CN116884931A - 与半导体装置一起使用的散热器 - Google Patents

与半导体装置一起使用的散热器 Download PDF

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CN116884931A
CN116884931A CN202311013528.8A CN202311013528A CN116884931A CN 116884931 A CN116884931 A CN 116884931A CN 202311013528 A CN202311013528 A CN 202311013528A CN 116884931 A CN116884931 A CN 116884931A
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memory
memories
heat
substrate
coupled
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G·E·帕克斯
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Micron Technology Inc
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Micron Technology Inc
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Abstract

本申请案涉及与半导体装置一起使用的散热器。本文揭示具有散热器的存储器装置。在一个实施例中，存储器装置包含耦合到衬底的前侧的第一存储器、耦合到所述衬底的后侧的第二存储器以及柔性散热器。所述柔性散热器可包含石墨，并且耦合到所述第一及第二存储器的后侧表面，以耗散由所述第一及第二存储器产生的热量。

Description

与半导体装置一起使用的散热器
分案申请的相关信息
本案是分案申请。该分案的母案是申请日为2019年05月10日、申请号为201910387666.X、发明名称为“与半导体装置一起使用的散热器”的发明专利申请案。
技术领域
本发明大体上涉及与半导体装置一起使用的散热器，并且更特定来说，涉及与存储器装置一起使用的石墨散热器。
背景技术
存储器封装或模块通常包含安装在衬底上的多个存储器装置。存储器装置广泛用于存储与各种电子装置(例如计算机、无线通信装置、照相机、数字显示器及类似物)有关的信息。通过对存储器单元的不同状态进行编程来存储信息。存在各种类型的存储器装置，其包含磁性硬盘、随机存取存储器(RAM)、只读存储器(ROM)、动态RAM(DRAM)、同步动态RAM(SDRAM)等。
一般来说，改进存储器封装可包含增加存储器单元密度，增加读取/写入速度或以其它方式减少操作延迟，增加可靠性，增加数据保持，降低功耗，降低制造成本以及减小存储器装置的存储器封装及/或组件的大小及占据面积及其它度量。与改进存储器封装相关联的挑战是改进通常导致增加的热量产生-例如，由于增加存储器装置密度，增加了存储器装置的速度或处理能力等。在没有充分冷却的情况下，额外加热可能导致存储装置达到高于其最大操作温度(Tmax)的温度。
发明内容
在第一方面中，提供一种存储器装置。所述存储器装置包括：衬底，其具有前侧及后侧；第一存储器，其耦合到所述衬底的所述前侧；第二存储器，其耦合到所述衬底的所述后侧；及柔性散热器，其耦合到所述第一及第二存储器，其中所述散热器包含石墨，且其中所述石墨定位在所述第一及第二存储器中的每一者的至少一部分上方。
在第二方面中，提供一种与双列直插式存储器模块(DIMM)一起使用的散热器。所述散热器包括：石墨构件；及塑料覆盖物，其包封所述石墨构件，其中所述散热器经配置以耦合到以下中的至少一者-多个第一存储器，其电耦合到所述DIMM的衬底的前侧并且以一或多个行布置在所述DIMM的衬底的前侧处，及多个第二存储器，其电耦合到所述DIMM的所述衬底的后侧并且以一或多个行布置在所述DIMM的所述衬底的后侧处。
在第三方面中，提供一种制造存储器装置的方法。所述方法包括：将第一散热器粘附到耦合到衬底的前侧的多个第一存储器，使得所述第一散热器的石墨层至少部分定位在所述第一存储器中的每一者的后侧表面上方；以及将第二散热器粘附到耦合到所述衬底的后侧的多个第二存储器，使得所述第二散热器的石墨层至少部分定位在所述第二存储器中的每一者的后侧表面上方。
在第四方面中，提供一种制造存储器装置的方法。所述方法包括将柔性散热器耦合到(a)附接到衬底的前侧的多个第一存储器及(b)附接到所述衬底的后侧的多个第二存储器，使得所述柔性散热器围绕所述衬底的边缘部分延伸。
附图说明
参考以下图式可更好地理解本技术的许多方面。图式中的组件不一定按比例绘制。而是重点在于清楚地说明本技术的原理。
图1A到1C分别是根据本技术的实施例配置的存储器装置100的侧视图、前视图及后视图。
图2A是根据本技术的实施例配置的与图1A到1C的存储器装置一起使用的第一散热器的前视图。
图2B是根据本技术的实施例配置的与图1A到1C的存储器装置一起使用的第二散热器的前视图。
图2C是根据本技术的实施例配置的图2A及2B的散热器中的任一者的一部分的侧横截面图。
图3A到3C分别是根据本技术的实施例的耦合到图1A到1C的存储器装置的图2A及2B的散热器的前视图、后视图及侧视图。
图4是根据本技术的另一个实施例配置的与图1A到1C的存储器装置一起使用的散热器的前视图。
图5A到5C分别是根据本技术的实施例的耦合到图1A到1C的存储器装置的图4的散热器的前视图、后视图及侧视图。
图6A是用于将图2A到3C的散热器耦合到根据本技术的实施例配置的图1A到1C的存储器装置的过程或方法的流程图。
图6B是用于将图4到5C的散热器耦合到根据本技术的实施例配置的图1A到1C的存储器装置的过程或方法的流程图。
图7是包含根据本技术的实施例配置的存储器装置的系统的示意图。
具体实施方式
下文参考图1到7描述具有散热器的存储器装置以及相关联系统及方法的若干实施例的特定细节。在若干实施例中，存储器装置是双列直插式存储器模块(DIMM)，其具有衬底及电耦合到衬底的多个存储器。存储器可包含分别在衬底的前侧及后侧上布置成行的第一及第二存储器。柔性散热器耦合到第一存储器、第二存储器或第一及第二存储器两者。在一些实施例中，散热器包含包封在塑料覆盖物中的石墨构件。散热器有利地通过将热量从至少一些存储器(例如，由于其在衬底上的位置更可能具有增加操作温度的存储器)散开而降低存储器的操作温度。
论述众多具体细节以提供对本技术的实施例的透彻及可行描述。然而，所属领域的技术人员将理解，所述技术可具有额外实施例，并且可在没有下文参考图1到7描述的实施例的若干细节的情况下实践所述技术。在其它情况下，未展示或未详细描述大体上与存储器装置相关联的众所周知的结构或操作，以避免模糊所述技术的其它方面。一般来说，应理解，除本文揭示的那些特定实施例之外的各种其它装置及系统可在本技术的范围内。举例来说，在下文所说明的实施例中，存储器装置及系统主要在与DRAM及闪存(例如，NAND及/或NOR)存储媒体兼容的DIMM的上下文中描述。然而，根据本技术的其它实施例配置的存储器装置及系统可包含与其它类型的存储媒体兼容的存储器模块，所述其它类型的存储媒体包含PCM、RRAM、MRAM、只读存储器(ROM)、可擦除可编程ROM(EPROM)、电可擦除可编程ROM(EEROM)、铁电、磁阻及其它存储媒体，其包含静态随机存取存储器(SRAM)。另外，本文描述的至少一些散热器可用于除存储器封装之外的半导体封装。
如本文所使用的，术语“垂直”、“横向”、“上”、“下”、“之上”及“之下”可指代鉴于图式中所展示的定向的半导体装置中的特征的相对方向或位置。举例来说，“上”或“最上”可指代比另一特征更靠近页面顶部定位的特征。然而，这些术语应被广义地解释为包含具有其它定向的半导体装置，例如倒置或倾斜定向，其中顶部/底部、上方/下方、之上/之下，向上/向下及左/右可取决于定向而互换。
图1A到1C分别是根据本技术的实施例配置的存储器装置100的侧视图、前视图及后视图。一起参考图1A到1C，存储器装置100可为存储器模块，例如包含具有前侧103a及相对后侧103b的衬底(例如，印刷电路板(PCB)或类似物)102的双列直插式存储器模块(DIMM)102。多个第一存储器104a耦合到第一侧103a，且多个第二存储器104b耦合到第二侧103b。第一及第二存储器104a及104b经由电连接器(例如，焊球)101耦合到衬底102的相应侧。一般来说，存储器104a、b可包含各自包含集成存储器电路及/或逻辑电路的一或多个(例如，多个堆叠)半导体裸片，其可包含各种类型的半导体组件及功能特征，例如动态随机存取存储器(DRAM)、静态随机存取存储器(SRAM)、闪存、其它形式的集成电路存储器、处理电路及/或其它半导体特征。在一些实施例中，存储器104a、b可为DRAM存储器(例如，DRAM存储器裸片、DRAM存储器芯片、DRAM存储器封装或类似物)。在一些实施例中，存储器104a、b可为相同的(例如，DRAM存储器封装被制造成具有相同的设计及规格)，而在其它实施例中，存储器104a、b可彼此不同(例如，其包含不同类型的存储器裸片或控制器、逻辑及/或存储器裸片的不同组合)。
存储器装置100进一步包含沿衬底102的下边缘105a (与上边缘105b相对)的边缘连接器106。边缘连接器106包含用于将存储器104a、b连接到外部电路(未展示)的多个触点107。在一些实施例中，举例来说，边缘连接器106可用于将存储器装置100可释放地固定在主机装置(例如，母板)中的对应DIMM插槽中。更特定来说，边缘连接器106可将存储器装置100的命令/地址总线及/或数据总线耦合到主机装置，用于例如在存储器存取操作期间向/从连接的主机装置接收及/或传输数据信号。
参考图1B及1C，存储器104a、b分别在衬底102的侧103a、b上布置成行。在其它实施例中，存储器104a、b可不同地布置及/或可包括不同数目。举例来说，多于或少于所说明的二十个第一存储器104a及二十个第二存储器104b(例如，二十二个、十八个、十六个等)可以任何数目的行及/或列布置，或者大体上不对准等。在一些实施例中，存储器装置100可包含耦合到衬底102的其它电组件(例如，半导体组件、集成电路组件等)。在所说明的实施例中，举例来说，存储器装置100包含电压调节器或电力管理集成电路(PMIC)108及耦合到衬底102的前侧103a的寄存时钟驱动器(RCD)109。PMIC 108可包含一或多个电压调节器，以将供应电压转换为一或多个输出电压(例如，VDD、VDDQ、VPP、VSS、VSSQ等)以供存储器104a、b中的一或多者使用。RCD 109可从命令/地址总线接收命令/地址信号，并为存储器104a、b产生存储器命令/地址信号。尽管说明为耦合到衬底102的前侧103a，但是在其它实施例中，PMIC108、RCD 109及/或其它电组件可耦合到衬底102的后侧103b。在一些实施例中，耦合到衬底102的其它电组件(例如PMIC 108及RCD 109)可具有比存储器104a、b更高的最大操作温度。举例来说，在一些实施例中，存储器104a、b及PMIC 108及/或RCD 109的最大操作温度之间的差可为30℃或更大。
图2A及2B分别是用于与图1A到1C中所展示并根据本技术的实施例配置的存储器装置100一起使用的第一散热器210a及第二散热器210b的前视图。图2C是根据本技术的实施例配置的散热器210a、b中的任一者的一部分的侧横截面图。散热器210a、b可大体上彼此相似，并且在一些实施例中相同。一起参考图2A到2C，散热器210a、b各自包含在塑料覆盖物214内密封(例如，层压、包封等)的导热构件212。为清楚起见，塑料覆盖物214的顶层(图2C)未展示在图2A及2B中。在一些实施例中，导热构件212包括石墨，且塑料覆盖物214包括热塑性材料，例如聚对苯二甲酸乙二醇酯(PET)。在其它实施例中，导热构件212可包括其它导热材料，例如(举例来说)镍(Ni)、铜(Cu)、铝(Al)、具有高导热率的陶瓷材料(例如，氮化铝)或其组合。在其它实施例中，塑料覆盖物214可包括其它合适材料，例如(举例来说)聚乙烯(PR)、聚丙烯(PP)等。在这些及其它实施例中，散热器210a、b可为大体上柔性的。
在所说明的实施例中，散热器210a、b各自具有大体上矩形平台形状，而在其它实施例中，散热器210a、b可具有其它合适形状(例如，圆形、椭圆形、正方形、直线形、多边形等)。在一些实施例中，散热器210a、b可各自具有介于约120到130mm之间的长度L(例如，约126mm)及介于约20到30mm之间的宽度W(例如，约23mm)。传导构件212占据散热器210a、b的大体上所有区域-例如与直接邻近散热器210a、b的边缘(例如，周边)215的塑料覆盖物214的边界或密封区分开的整个区域。在一些实施例中，塑料覆盖物214的密封区可具有介于约1到5mm之间(例如，介于约1到3mm之间)的宽度B。
参照图2A，第一散热器210a的传导构件212可包含形成在其中的第一孔(例如，开口、洞、切口等)218及第二孔219。在其它实施例中，第一及第二孔218及219可经形成以延伸通过第一散热器210a的整个厚度(例如，通过传导构件212及塑料覆盖物214)。在特定实施例中，第一孔218可具有大体上矩形平台形状，其长度约为15mm，且宽度约为10mm，且第二孔219可具有大体上矩形平台形状，其长度约为10mm，且宽度约为5mm。在其它实施例中，第一及第二孔218、219可具有其它平台形状(例如，圆形、椭圆形、正方形、直线形、多边形等)及/或可具有不同尺寸。同样地，在一些实施例中，散热器210a、b可包含比两个所说明的孔更多或更少的孔。
如图2C所说明，散热器210a、b可各自包含在其一侧上的粘合剂(例如，粘合剂层)216，其用于例如将散热器210a、b粘附到存储器装置100，如下文详细描述。在一些实施例中，粘合剂216可为具有高导热率的丙烯酸或PET膜粘合剂。在某些实施例中，粘合剂216可由另一合适热界面材料(TIM)形成，其经设计以增加存储器装置100与散热器210a、b之间的表面结合部处的热接触传导。举例来说，粘合剂216可为掺杂有导热材料(例如，碳纳米管、焊料材料、类金刚石碳(DLC)等)的粘合剂。
图3A到3C分别是展示耦合到根据本技术的实施例的存储器装置100的散热器210a、b的前视图、后视图及侧视图。一起参考图3A到3C，第一散热器210a经由粘合剂216耦合到衬底102的前侧103a上的第一存储器104a，并且第二散热器210b经由粘合剂216耦合到衬底102的第二侧103b上的第二存储器104b。在所说明的实施例中，散热器210a、b分别覆盖存储器104a、b中的每一者的大体上所有后侧表面。因此，因为传导构件212(图2A到2C)占据散热器210a、b的大体上所有区域，所以传导构件212可覆盖(例如，热耦合到，定位在其上方等)存储器104a、b中的每一者的大体上整个后侧。
以此方式，散热器210a、b的传导构件212经定位以吸收及耗散热能使其远离存储器104a、b。特定来说，散热器210a、b可有利地将热量从存储器104a、b中的某些存储器中散开，否则这些存储器将在更高的温度下操作(例如，在并入存储器装置100的主机装置内的空气流动路径的“下游”的那些存储器)。因此，散热器210a、b可降低存储器104a、b中的任一单个者超过其最大操作温度(Tmax)的可能性。
在所说明的实施例中，散热器210a、b的边缘215定位在由存储器104a、b分别界定的外周边内。也就是说，散热器210a、b的边缘215定位在存储器104a、b的后侧表面上并且不悬垂在存储器104a、b的后侧表面上。此布置可抑制散热器210a、b从存储器104a、b剥离，且借此弱化散热器210a、b与存储器104a、b之间的热耦合-尤其是当存储器装置100经配置用于由最终用户安装或处置时。在其它实施例中，散热器210a、b可覆盖存储器104a、b的更多或更少的后侧表面。在一些实施例中，举例来说，散热器210a、b可(i)仅部分覆盖存储器104a、b的后侧表面，(ii)仅覆盖存储器104a、b中的部分(例如，子集)，(iii)完全覆盖并悬垂在存储器104a、b的后侧表面上等。类似地，在一些实施例中，存储器装置100可仅包含第一散热器210a或仅包含第二散热器210b，或者可具有两个以上散热器。
参考图3A，第一及第二孔218、219(在图3A中模糊；以虚线展示)可分别在PMIC 108及RCD 109(在图3A中模糊；以虚线展示)上方大体上对准以抑制从PMIC 108及RCD 109到第一散热器210a的传导构件212中的热路径。更特定来说，第一及第二孔218、219不像第一散热器210a的传导构件212那样好地传导热量，且因此抑制来自PMIC 108及RCD 109的热量进入传导构件212并增加第一存储器104a的温度。如上文详细描述，PMIC 108及RCD 109的最大操作温度可高于存储器104a、b的最大操作温度。因此，与更敏感的存储器104a、b相比，远离PMIC 108及RCD 109的热量耗散可能较不重要。在其它实施例中，散热器210a、b可具有布置在耦合到衬底102的各种电路组件上方的更多或更少的孔。此外，在一些实施例中，散热器210a、b的传导构件212可定位在除存储器104a、b之外的其它电路组件上方或热耦合到所述其它电路组件-举例来说，具有相对低的最大操作温度(Tmax)并且因此将受益于热量耗散的电路组件。
尽管上文就单独第一及第二散热器210a、b进行描述，但是在一些实施例中，为便于参考，散热器210a、b可被称为单个散热器(例如，用于与单个存储器装置100一起使用)，其具有例如单独第一及第二部分。
图4是与根据本技术的另一个实施例配置的图1A到1C中展示的存储器装置100一起使用的散热器410的前视图。散热器410可包含与上文详细描述的散热器210a、b的特征大体上类似的特征。举例来说，散热器410通常可为柔性的并且可包含密封在塑料覆盖物414内的导热(例如，石墨)构件412。为清楚起见，图4中未展示塑料覆盖物414的顶层。
在所说明的实施例中，散热器410具有大体上矩形形状，其具有第一边缘尺寸D1(例如，长度)及第二边缘尺寸D2(例如，宽度)。在一些实施例中，第一边缘尺寸D1在约120到130mm之间(例如，约126mm)，且第二边缘尺寸D2在约45到55mm之间(例如，约51mm)。散热器410可进一步包含第一部分420、第二部分422及介于第一及第二部分420、422之间的第三部分424。在一些实施例中，传导构件412可仅部分定位在第三部分424内(例如，在第三部分424中具有一或多个切口)，或者可分成仅位于第一及第二部分420、422内的两个部分。在一些实施例中，一或多个孔(例如，第一孔418及第二孔419)在第一部分420处的传导构件412中形成。孔大体上可形成以便当散热器410耦合到存储器装置100时在存储器装置100的各种电路组件上方对准，如下文详细描述。如所展示，传导构件412占据与直接邻近散热器410的边缘415的塑料覆盖物414的边界或密封区分开的散热器410的大体上所有区域。
图5A到5C是根据本技术的实施例的耦合到存储器装置100的散热器410的前视图、后视图及侧视图。一起参考图5A到5C，散热器410耦合到存储器104a、b并缠绕衬底102的上边缘105b。更特定来说，(i)散热器410的第一部分420大体上是平面的并且经由粘合剂516耦合到衬底102的前侧103a上的第一存储器104a(图5C)，(ii)散热器410的第二部分422大体上是平面的并且经由粘合剂516耦合到衬底102的第二侧103b上的第二存储器104b，以及(iii)散热器410的第三部分424大体上是弯曲的并且围绕衬底102的上边缘105b延伸。参见图5A，孔418、419(在图5A中模糊；以虚线展示)可分别在PMIC 108及RCD 109(在图5A中模糊；以虚线展示)上方对准，以抑制散热器410的传导构件412与PMIC 108及RCD 109之间的热路径。
在所说明的实施例中，散热器410覆盖存储器104a、b中的每一者的大体上所有后侧表面以吸收及耗散热能使其远离存储器104a、b。与例如图2A到3C中所说明的实施例相比，散热器410可具有相对较大热耗散区域，这是因为传导构件412定位在散热器410的第三部分424中。也就是说，举例来说，散热器410可包含相对较多石墨。此外，因为散热器410缠绕衬底102的上边缘105b，所以散热器具有相对较少的边缘，这可能导致散热器410与存储器104a、b之间的热耦合的剥离或其它弱化。特定来说，散热器410不包含必须粘附到最上面存储器104a、b并且在例如由最终用户安装存储器装置100期间可能对剥离敏感的上边缘。
本技术的散热器可手动或自动地耦合到存储器装置100作为自动制造过程的部分。举例来说，图6A是根据本技术的实施例的用于将散热器210a、b (图2A到3C)耦合到存储器装置100的过程或方法640的流程图。从框642开始，方法640包含将第一散热器210a粘附(例如，经由粘合剂216)到第一存储器104a，使得第一散热器210a的导热构件212至少部分定位在第一存储器104a中的每一者的后侧表面上方(例如，如图3A中所展示)。在框644处，方法640包含将第二散热器210b粘附到第二存储器104b，使得第二散热器210b的导热构件212至少部分定位在第二存储器104b中的每一者的后侧表面上方(例如，如图3B中所展示)。在一些实施例中，举例来说，散热器210a、b可压抵存储器104a、b以将其粘附到存储器104a、b。在一些实施例中，在将散热器210a、b的塑料覆盖物214压抵存储器104a、b之前，粘合剂216可形成在存储器104a、b的后侧表面上。在一些实施例中，可在粘合剂216上形成释放层以在安装散热器210a、b之前保护粘合剂216。
图6B是根据本技术的实施例的用于将散热器410b(图4到5C)耦合到存储器装置100的过程或方法650的流程图。从框652开始，方法650包含抵靠第一存储器104a的后侧表面粘附散热器410的第一部分420。在框654处，散热器410的第三部分424围绕衬底102的上边缘105b折曲或弯曲。在框656处，散热器410的第二部分422粘附到第二存储器104b的后侧表面。在一些实施例中，粘合剂516可首先形成在存储器104a、b的后侧表面上及/或散热器410上，并且散热器410可压抵存储器104a、b以将其粘附到存储器104a、b上。在其它实施例中，在将第一及第二部分420、422压抵存储器104a、b之前，散热器410可部分或完全弯曲。
除从存储器104a、b耗散热量之外，本文所描述的散热器还可用作盖子或护罩，以保护存储器装置100的组件免于由于偶然接触而损坏。此外，在一些实施例中，散热器可具有印刷在其上的描述性标签，举例来说，其列出存储器装置100的细节或规格。
图7是包含根据本技术的实施例配置的存储器装置的系统的示意图。上文参考图1到6B描述的前述存储器装置中的任一者可并入无数更大及/或更复杂系统中的任何者中，其代表性实例是图7中示意性展示的系统790。系统790可包含存储器装置组合件700、电力源792、驱动器794、处理器796及/或其它子系统及组件798。存储器装置组合件700可包含与上文参考图1到6B描述的存储器装置的特征大体上类似的特征，且因此可包含具有各种配置的石墨散热器。所得系统790可执行各种各样功能中的任何者，例如存储器存储、数据处理及/或其它合适功能。因此，代表性系统790可包含但不限于手持装置(例如，移动电话、平板计算机、数字阅读器及数字音频播放器)、计算机(例如，工作站、服务器等)、交通工具、电器及其它产品。系统790的组件可容纳在单个单元中或分布在多个互连单元上(例如，通过通信网络)。系统790的组件还可包含远程装置及各种各样的计算机可读媒体中的任何者。
从前述内容将了解，本文已经出于说明的目的描述本技术的特定实施例，但是在不脱离本发明的情况下可进行各种修改。因此，除由所附权利要求书限制之外，本发明不受限制。此外，在特定实施例的上下文中描述的新技术的某些方面也可在其它实施例中组合或消除。此外，尽管已经在所述实施例的上下文中描述与新技术的某些实施例相关联的优点，但是其它实施例也可表现出此类优点，并且并非所有实施例都必须表现出此类优点以落入本技术的范围内。因此，本发明及相关联技术可涵盖未在本文明确展示或描述的其它实施例。

Claims (1)

1.一种存储器装置，其包括：
衬底，其具有前侧及后侧；
第一存储器，其耦合到所述衬底的所述前侧；
第二存储器，其耦合到所述衬底的所述后侧；
电力管理集成电路PMIC，其耦合到所述衬底的所述前侧；及
柔性散热器，其耦合到所述第一及第二存储器，其中所述散热器包含石墨，其中所述石墨定位在所述第一及第二存储器中的每一者的至少一部分上方，其中所述石墨包含形成在其中的开口，且其中所述开口至少部分定位在所述PMIC上方。
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