CN116851940A - 一种新型钝化层开孔方法 - Google Patents
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Abstract
本发明涉及一种新型钝化层开孔方法,属于半导体制造技术领域,包括:将完成钝化层制作的晶片放入激光划片机;根据开孔大小及钝化层厚度,优化激光功率、脉冲频率、激光焦点和切割速度;根据步骤(2)优化的参数对开孔区域进行激光开孔作业,激光开孔时未烧蚀钝化层的整个厚度,在钝化层底部留有一保留层;将激光开孔后的晶片进行酸性溶液清洗或干法刻蚀处理,对表面附着物、生成物和保留层进行去除,即完成钝化层的开孔。本发明可以不影响其下部结构的性质,且方法简单、环保,开孔效率较高。
Description
技术领域
本发明涉及一种新型钝化层开孔方法,用于实现互联结构的半导体器件制造,属于半导体制造技术领域。
背景技术
随着晶片上的电路密度越来越大,晶片上所含元件数量不断增加,晶片表面已无法提供足够的面积来制作所需的互连结构(Interconnect),为此,业界采用两层以上的多层互连结构的设计方法,该方法通过刻蚀层间介质层形成沟槽或通孔,并在所述沟槽和通孔中填充导电材料来实现芯片内的多层电互连,形成互连结构。制作互联结构过程中,最主要的是钝化层(介质膜)开通,即采用刻蚀工艺,将钝化层(介质层)进行部分刻蚀以暴露出所述顶层金属的一部分,以形成焊盘,用于键合引线,以便与其它器件或集成电路相连。
当前钝化层(介质膜)开孔通用的方法是湿法腐蚀或者干法刻蚀。工艺步骤如下:通过光刻的方式,在晶圆表面制作光刻胶图形,如图1、2所示,将需要保留的区域用光刻胶6覆盖,需要开孔的地方暴露出来。对于精度要求不高的制程,可以使用湿法腐蚀的方式,利用HF酸、NH4F等溶液,配置成不同浓度的腐蚀性液体,在适当的温度下对晶片浸泡,对暴露出来的区域进行腐蚀,通过控制浸泡的时间实现光刻胶图形开孔7,如图3所示,然后进行去胶、清洗作业,即完成通孔刻蚀;当制程精度要求较高,如需要达到1um以下,甚至达到100nm的要求,则必须采用干法刻蚀,即在刻蚀腔中通入SiF4、NF3、CF4、CHF3、CH3F、CH2F2等多氟刻蚀气体,在射频电场的作用下形成等离子体,对暴露出来的区域进行刻蚀,根据被刻蚀材质(SiO2\TiO2\MgF\Al2O3)的不同,以及被刻蚀材质的厚度区别,单次刻蚀时间需要30-50分钟。
激光开孔是利用高功率密度激光束照射被加工材料,使材料快速被加热至汽化温度,材料蒸发后形成孔洞。当前激光开孔在机械加工领域广泛应用,使用空气或氮气作辅助气体,可有效减少孔径膨胀所致的放热,通过调节光功率、入射方向等,可实现多种形式的开孔,使用355nm波长激光开孔精度可达到0.1μm。
激光开孔具有如下特点:
(1)激光打孔速度快,效率高,经济效益好。
(2)激光打孔可获得大的深径比。
(3)激光打孔可在硬、脆、软等各类材料上进行。
(4)激光打孔无工具损耗。
(5)激光打孔适合于数量多、高密度的群孔加工。
(6)用激光可在难加工材料倾斜面上加工小孔。
(7)激光打孔对工件装夹要求简单,易实现生产线上的联机和自动化。
(8)激光打孔易对复杂形状零件打孔,也可在真空中打孔。
但是,在钝化层(介质膜)上开孔,会对钝化层下部的其他结构或材料造成热传导,导致下部结构、材料性质发生变化。
发明内容
针对现有技术的不足,本发明提供一种新型钝化层开孔方法,可以不影响其下部结构的性质,且方法简单、环保,开孔效率较高。
术语说明:
本发明采用以下技术方案:
一种新型钝化层开孔方法,包括以下步骤:
(1)将完成钝化层制作的晶片放入激光划片机;
(2)将需要开孔的区域传入设备识别的模板,根据开孔大小及钝化层厚度,优化激光功率、脉冲频率、激光焦点和切割速度;
(3)根据步骤(2)优化的参数对开孔区域进行激光开孔作业,激光开孔时未烧蚀钝化层的整个厚度,在钝化层底部留有一保留层;
(4)将激光开孔后的晶片进行酸性溶液清洗或干法刻蚀处理,对表面附着物、生成物和保留层进行去除,即完成钝化层的开孔。
本发明可直接作业于需开孔位置,不需要光刻工艺的支持,节省了涂胶、显影、曝光、去胶这些复杂的工步,提高效率的同时,有效降低对光刻胶、显影液、去胶液的物料需求。
本发明在激光开孔时并未一次性将钝化层烧蚀彻底,而是留有一层保留层,可以保护钝化层底部的金属等其他结构不被破坏,后续的酸性溶液清洗或干法刻蚀处理掉保留层的同时,还可以去除烧蚀过程中产生的粉末附着物、其他生成物等,当然这个过程中需开孔区域之外的薄膜也会被消耗相同的厚度。
优选的,步骤(3)中,采用输出功率2-3W的355nm激光,其脉冲频率为120-140KHZ,切割速度为20-40mm/s,激光焦点位于钝化层厚度的中间到往上1/3厚度处,即激光焦点较为靠上,位于钝化层厚度的1/2至距离上表面1/3厚度处,在该参数条件下,使得钝化层不会彻底烧蚀整个厚度,在底部保留有一定厚度的保留层。
优选的,步骤(3)中,保留层厚度为50-100nm。
优选的,步骤(1)中,钝化层的材料可以是SiO2、TiO2、MgF、Al2O3中的一种或几种的组合,钝化层通过PECVD、磁控溅射或电子束蒸发方式获得。
优选的,步骤(1)中,钝化层的厚度为0.1-3μm。
优选的,步骤(4)中,酸性溶液选用HF、NH4F、水的混合液,其质量为HF:NH4F:水=1:1:30,酸性溶液清洗时温度为25-40℃,浸泡时间为30-60秒。
优选的,步骤(4)中,干法刻蚀时,选用SiF4、NF3、CF4中的一种气体或多种气体的混合,射频功率使用400-600W,刻蚀时间1-2分钟。
本发明未详尽之处均可参见现有技术。
本发明的有益效果为:
1)本发明可适用于不同直径的圆孔或不规格形状的开孔,不需要每种孔型都定制对应的光刻版图。
2)本发明可以对4-8英寸晶圆进行开孔作业,不需要配套的光刻版,且开孔速率快,4英寸晶圆可在10分钟内完成工艺。
3)本发明不使用含氟、含氯等特殊气体,具有环保的特点,且不使用光刻版图、光刻工艺,从本质上提升效率。
4)本发明在激光开孔时并未一次性将钝化层烧蚀彻底,而是留有一层保留层,可以保护钝化层底部的金属等其他结构不被破坏,后续的酸性溶液清洗或干法刻蚀处理掉保留层的同时,还可以去除烧蚀过程中产生的粉末附着物、其他生成物等,当然这个过程中需开孔区域之外的薄膜也会被消耗相同的厚度。
附图说明
图1为现有技术中钝化层涂光刻胶后的晶圆;
图2为现有技术中完成光刻图形后的晶圆;
图3为现有技术中湿法腐蚀或干法刻蚀后的晶圆;
图4为本发明钝化层制作完成后的晶圆结构示意图;
图5为本发明激光开孔后的晶圆结构示意图;
图6为图5经酸性溶液清洗或干法刻蚀处理后的晶圆结构示意图;
其中,1-晶圆,2-金属层,3-钝化层,4-开孔,5-保留层,6-光刻胶,7-光刻胶图形开孔。
具体实施方式:
为使本发明要解决的技术问题、技术方案和优点更加清楚,下面将结合附图及具体实施例进行详细描述,但不仅限于此,本发明未详尽说明的,均按本领域常规技术。
实施例1:
一种新型钝化层开孔方法,包括以下步骤:
(1)在晶圆1表面制作钝化层3,钝化层3采用为SiO2,钝化层3总厚度为3μm,采用PECVD制作而成;
(2)将完成钝化层制作的晶片放入激光划片机,根据所需开孔的图形及位置,建立整个晶圆的位置模板;
(3)采用输出功率2W的355nm激光,其脉冲频率为130KHZ,切割速度为30mm/s,激光焦点位于钝化层厚度的中间处,对开孔区域进行激光开孔作业,激光开孔4时未烧蚀钝化层的整个厚度,在钝化层底部留有一保留层,保留层厚度为100nm;
(4)将激光开孔后的晶片进行酸性溶液清洗,酸性溶液选用HF、NH4F、水的混合液,其质量为HF:NH4F:水=1:1:30,酸性溶液清洗时温度为30℃,浸泡时间为40秒。
本实施例在激光开孔时并未一次性将钝化层烧蚀彻底,而是留有一层保留层,可以保护钝化层底部的金属层2等其他结构不被破坏,后续的酸性溶液清洗或干法刻蚀处理掉保留层的同时,还可以去除烧蚀过程中产生的粉末附着物、其他生成物等,当然这个过程中需开孔区域之外的薄膜也会被消耗相同的厚度。
实施例2:
一种新型钝化层开孔方法,如实施例1所述,不同的是,步骤(4)中,将激光开孔后的晶片采用干法刻蚀处理,选用SiF4、NF3、CF4中的一种气体或多种气体的混合,射频功率使用400-600W,刻蚀时间1-2分钟。
实施例3:
一种新型钝化层开孔方法,如实施例1所述,不同的是,步骤(3)中,激光焦点位于距离上表面1/3厚度处,对开孔区域进行激光开孔作业,激光开孔时未烧蚀钝化层的整个厚度,在钝化层底部留有一保留层,保留层厚度为50nm。
以上所述是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明所述原理的前提下,还可以作出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (7)
1.一种新型钝化层开孔方法,其特征在于,包括以下步骤:
(1)将完成钝化层制作的晶片放入激光划片机;
(2)根据开孔大小及钝化层厚度,优化激光功率、脉冲频率、激光焦点和切割速度;
(3)根据步骤(2)优化的参数对开孔区域进行激光开孔作业,激光开孔时未烧蚀钝化层的整个厚度,在钝化层底部留有一保留层;
(4)将激光开孔后的晶片进行酸性溶液清洗或干法刻蚀处理,对表面附着物、生成物和保留层进行去除,即完成钝化层的开孔。
2.根据权利要求1所述的新型钝化层开孔方法,其特征在于,步骤(3)中,采用输出功率2-3W的355nm激光,其脉冲频率为120-140KHZ,切割速度为20-40mm/s,激光焦点位于钝化层厚度的中间到往上1/3厚度处。
3.根据权利要求2所述的新型钝化层开孔方法,其特征在于,步骤(3)中,保留层厚度为50-100nm。
4.根据权利要求1所述的新型钝化层开孔方法,其特征在于,步骤(1)中,钝化层的材料可以是SiO2、TiO2、MgF、Al2O3中的一种或几种的组合,钝化层通过PECVD、磁控溅射或电子束蒸发方式获得。
5.根据权利要求4所述的新型钝化层开孔方法,其特征在于,步骤(1)中,钝化层的厚度为0.1-3μm。
6.根据权利要求1所述的新型钝化层开孔方法,其特征在于,步骤(4)中,酸性溶液选用HF、NH4F、水的混合液,其质量为HF:NH4F:水=1:1:30,酸性溶液清洗时温度为25-40℃,浸泡时间为30-60秒。
7.根据权利要求1所述的新型钝化层开孔方法,其特征在于,步骤(4)中,干法刻蚀时,选用SiF4、NF3、CF4中的一种气体或多种气体的混合,射频功率使用400-600W,刻蚀时间1-2分钟。
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