CN116848967A - 压电元件 - Google Patents

压电元件 Download PDF

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CN116848967A
CN116848967A CN202180090395.7A CN202180090395A CN116848967A CN 116848967 A CN116848967 A CN 116848967A CN 202180090395 A CN202180090395 A CN 202180090395A CN 116848967 A CN116848967 A CN 116848967A
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piezoelectric
electrode
piezoelectric element
piezoelectric ceramic
plane
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小木曾晃司
三轮恭也
石井秀树
黑田大辅
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Murata Manufacturing Co Ltd
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Abstract

压电元件(10)具备：含有具有钛矿型晶体结构的复合氧化物作为主要成分的压电陶瓷(1)，在压电陶瓷(1)的第一面(1a)设置的第一电极(2a)，以及在与第一面(1a)相对的第二面(1b)设置的第二电极(2b)。压电陶瓷(1)主要具有菱形体晶体结构。压电陶瓷(1)的晶轴为{100}取向，{100}取向的方向是与第一电极(2a)和第二电极(2b)相对的方向正交的方向。

Description

压电元件
技术领域
本发明涉及压电元件。
背景技术
已知压电元件可以将电能转换为机械能并将机械能转化为电能。
专利文献1中记载了：一种压电元件，具备PZT和电极，PZT具有所含的Zr和Ti在室温下成为菱形晶体的组成比的钙钛矿结构，并且以其
[100]方向、[010]方向或[001]方向大致垂直于电极面的方式晶体取向；以及，一种压电元件，PZT具有所含的Zr和Ti在室温下成为四方晶的组成比的钙钛矿结构，并且以其[001]方向大致垂直于电极面的方式晶体取向。专利文献1中记载了根据该压电元件，与使[111]方向垂直朝向于电极面的传统的压电元件相比，在电场方向上具有较大的压电常数，能够提高特性。
现有技术文献
专利文献
专利文献1：日本特开平11-233844号公报
发明内容
然而，为了进一步提高压电元件的特性，希望开发具有更大压电常数的压电元件。
本发明是解决上述课题的发明，目的在于提供一种压电常数大的压电元件。
本发明的压电元件，其特征在于，具备：
含有具有钙钛矿型晶体结构的复合氧化物作为主要成分的压电陶瓷，以及
在上述压电陶瓷的第一面设置的第一电极和在与上述第一面相对的第二面设置的第二电极；
上述压电陶瓷主要具有菱形体晶体结构，
上述压电陶瓷的晶轴为{100}取向，
上述{100}取向的方向是与上述第一电极和上述第二电极相对的方向正交的方向。
本发明的其他方式中的压电元件，其特征在于，具备：
含有具有钙钛矿型晶体结构的复合氧化物作为主要成分的压电陶瓷，以及
在上述压电陶瓷的第一面设置的第一电极和在与上述第一面相对的第二面设置的第二电极；
上述压电陶瓷的晶轴为{100}取向，
上述{100}取向的方向是与上述第一电极和上述第二电极相对的方向正交的方向，
上述压电陶瓷从{100}取向面观察的X射线衍射图案中的由(002)面和(200)面的衍射构成的复合峰的半峰宽为0.5°以上。
根据本发明的压电元件，与无取向的压电元件以及晶轴在一对电极相对的方向上取向的压电元件相比，具有高的压电常数，能够得到高的压电特性。
附图说明
图1是示意性地表示本发明的压电元件的构成的截面图。
图2(a)是表示改变了组成的6种压电陶瓷的从{100}取向面观察的X射线衍射图案的图，(b)是X射线的衍射角为45°附近的衍射峰的放大图。
图3是表示作为压电陶瓷的板状陶瓷的极化轴与晶轴的取向方向的关系的图。
图4是示意性地表示电场方向、板状陶瓷的取向方向、极化方向以及压电元件的振动方向的各方向的关系的图。
图5是表示取向方向的角度与压电常数的关系的图。
图6表示取向方向的角度与耦合系数的关系的图。
图7是用来说明31模式、32模式和t模式的振动模式的图。
具体实施方式
以下表示本发明的实施方式，具体说明本发明的特征。
本发明的压电元件，具备：含有具有钙钛矿型晶体结构的复合氧化物作为主要成分的压电陶瓷、以及在压电陶瓷的第一面设置的第一电极和在与第一面相对的第二面设置的第二电极；压电陶瓷主要具有菱形体晶体结构，压电陶瓷的晶轴为{100}取向，{100}取向的方向是与第一电极和第二电极相对的方向正交的方向。
另外，本发明的压电元件，具备：含有具有钙钛矿型晶体结构的复合氧化物作为主要成分的压电陶瓷、以及在压电陶瓷的第一面设置的第一电极和在与第一面相对的第二面设置的第二电极；压电陶瓷的晶轴为{100}取向，{100}取向的方向是与第一电极和第二电极相对的方向正交的方向，压电陶瓷的从{100}取向面观察的X线衍射图案中的由(002)面和(200)面的衍射构成的复合峰的半峰宽为0.5°以上。
图1是示意性地表示本发明的压电元件10的构成的截面图。本发明的压电元件10具备压电陶瓷1、以及在压电陶瓷1的第一面1a上设置的第一电极2a和在与第一面1a相对的第二面1b上设置的第二电极2b。
压电陶瓷1含有具有钙钛矿型晶体结构的复合氧化物作为主要成分。主要成分是指以重量比计成分中含有50％以上的成分。具有钙钛矿型晶体结构的复合氧化物例如有PZT(锆钛酸铅)、PNN－PZT(镍铌酸铅(PNN)－钛酸铅(PT)－锆酸铅(PZ))、PMN－PZT(铌镁酸铅(PMN)－钛酸铅(PT)－锆酸铅(PZ))等。
压电陶瓷1的晶轴为{100}取向，即，在[100]方向、[010]方向或者[001]方向上取向。{100}取向的方向是与第一电极2a和第二电极2b相对的方向(图1的箭头Y1的方向)正交的方向，即，与压电陶瓷1的第一面1a和第二面1b平行的方向。但是，在本发明中，“与第一电极2a和第二电极2b相对的方向正交的方向”包括以正交方向为基准±10°范围内的方向。这里，当[100]轴、[010]轴或者[001]轴对准的取向度在洛特格林法(Lotgering Method)中为0.30以上时，压电陶瓷1的晶轴为{100}取向。压电陶瓷1可以通过层叠多个层的层叠结构而构成。
应予说明，{100}取向的方向可以按如下确定。即，采用XRD分析装置，通过θ－2θ法对元件的主面、侧面、端面的表面或截面进行测定，在Lotgering法中显示最高值的面为取向方向。
压电陶瓷1主要具有菱形体(R相)晶体结构，在通过X射线衍射得到的从{100}取向面观察的X射线衍射图案中，由(002)面和(200)面的衍射构成的复合峰的半峰宽为0.5°以上。应予说明，压电陶瓷1主要具有菱形体晶体结构是指压电陶瓷1晶体结构的至少50％以上为菱形晶体。
图2(a)是表示改变了组成的6种压电陶瓷的从{100}取向面观察的X射线衍射图案，图2(b)是X射线的衍射角为45°附近的衍射峰的放大图。图2(b)所示的X射线的衍射角为45°附近的衍射峰是表示由(002)面和(200)面的衍射构成的复合峰。应予说明，在图2(a)和(b)中，将6种压电陶瓷的试样从上依次称为试样S1～S6。试样S1～S6是未极化的试样。应予说明，在极化元件的情况下，优选加热到居里点以上而极化后再测定X射线衍射图案。
如图2(a)、(b)所示，在试样S1的衍射图案中存在(002)面的衍射峰和(200)面的衍射峰2个峰。另一方面，在试样S6的衍射图案中，形成了由(002)面的衍射峰和(200)面的衍射峰重叠的复合峰。应予说明，压电陶瓷1具有MPB组成，但MPB组成是R相和T相的过渡区域，在微观中，由于存在晶体的a轴和c轴的长度不同的区域，因此观察到了(002)面的衍射峰和(200)面的衍射峰。
试样S6的由(002)面和(200)面的衍射构成的复合峰的半峰宽为0.5°以上。另外，试样S3～S5的由(002)面和(200)面的衍射构成的复合峰的半峰宽也为0.5°以上。试样S2的(200)面的衍射峰的高度高于(002)面的衍射峰的高度的一半，由(002)面和(200)面的衍射构成的复合峰的半峰宽为0.5°以上。
另一方面，试样S1的(200)面的衍射峰的高度比(002)面的衍射峰的高度的一半还低。因此，试样S1的由(002)面和(200)面的衍射构成的复合峰的半峰宽小于0.5°。所以，试样S1的压电陶瓷不能成为本发明的压电元件10的压电陶瓷1。
本发明的压电元件10，由于具有上述结构而具有高的压电特性。本发明的压电元件10能够用于压电振动器、压电滤波器、压电致动器等各种压电装置。
实施例
准备Pb3O4、TiO2、ZrO2、NiO和Nb2O5的各粉末，按规定的组成称量，然后与水一起加入到罐磨机中，混合16小时。接着，使混合物干燥，然后在900℃下进行预煅烧。将得到的预煅烧粉体和粘合剂水溶液混合后，加入罐磨机，通过16小时粉碎混合，得到浆料。
将得到的浆料用刮刀法以片状涂布，然后，在达到干燥的期间，在与片状平行的方向上施加10T的磁场，制作陶瓷生片。将制作的陶瓷生片剪切成规定的大小，然后一边使取向方向一致一边层叠，以100MPa的压力进行压贴，得到成型体。
通过在空气中、350℃、5小时的条件下加热得到的成型体，进行脱脂，然后在空气中、1050℃、2小时的条件下烧制，得到作为压电陶瓷的板状陶瓷。
接着，通过溅射在板状陶瓷的两个主面上、即表面和背面，分别使由Ag构成的电极成膜，然后，在80℃、2kV/mm、30分钟的条件下进行极化处理。最后，进行切割使取向方向为长度方向，得到长度方向13mm、宽度方向3mm、厚度0.6mm的长方体形状的压电元件。
得到的压电元件的板状陶瓷具有钙钛矿型晶体结构的复合氧化物，具体而言，含有PNN－PZT作为主要成分。
在该压电元件中，作为压电陶瓷的板状陶瓷的晶轴为{100}取向，其取向方向是与一对电极的相对方向正交的方向，更详细地说，是压电元件的长度方向。另外，板状陶瓷主要具有菱形晶体的晶体结构，在从{100}取向面观察的X射线衍射图案中的由(002)面和(200)面的衍射构成的复合峰的半峰宽为0.5°以上。应予说明，X射线衍射装置是采用Rigaku株式会社制造的MiniFlex2，使用Cu管球，在扫描速度4°/min、步长0.02°、狭缝宽度1.25°的条件下，通过θ－2θ法进行测定。测定的数据是使用分析用软件Jade 5.0来去除Kα2峰。
将板状陶瓷的极化轴和晶轴的取向方向的关系示于图3。在图3中，作为自发极化的方向的极化轴的方向为[111]方向，极化处理的方向与电场的施加方向相同。
另外，通过改变磁场的施加方向，制作改变了取向方向的角度的多个压电元件，求出制作的压电元件的压电常数。图4是示意性地表示当理想地100％取向时，电场方向、板状陶瓷的取向方向、极化方向(自发极化的方向)和压电元件的振动方向的各个方向的关系的图。在图4中，表示了当取向方向为0°、15°、55°、75°、90°时的各个方向的关系。取向方向的角度为电场方向，即相对于一对电极相对的方向的角度。本发明的压电元件的取向方向的角度为90°，专利文献1中记载的压电元件的取向方向的角度为0°。
在图4中，也一并表示了当取向方向的角度为0°、55°、90°时从电场方向观察的极化方向。如图4所示，当取向方向的角度为0°时，极化方向分散在以圆锥表示的范围内，从上方观察时，在面内均匀地分散，但当90°时，表示极化方向可分布范围的圆锥朝向侧面，由此从上方观察时，集中在面内产生偏向的方向上。
图5是表示取向方向的角度和压电常数的关系的图。另外，图6是表示取向方向的角度和耦合系数的关系的图。耦合系数是表示压电效应大小的参数之一，值越大表示压电效应越高。在图5和图6中，虚线所示的数据表示无取向时的值。
图5和图6中的31模式、32模式和t模式的符号分别是如图7所示的同一样品的不同方向的振动模式。如图7所示，31模式是第一电极2a形成的第一面和第二电极2b形成的第二面的长度方向的振动模式。应予说明，调整角度为90°的取向方向，使其与第一面和第二面的长度方向一致。
如图5所示，当31模式中的压电常数在取向方向的角度为90°时，变为最大。即，作为主要具有菱形晶体的晶体结构的压电陶瓷的晶轴为{100}取向的、且{100}取向的方向是与第一电极2a和第二电极2b相对的方向正交的方向的、本发明的压电元件10，相比于无取向的压电元件以及专利文献1中记载的压电元件那样的在一对电极相对的方向上取向的压电元件，其压电常数高，具有高的压电特性。应予说明，这是由于压电陶瓷1的极化方向集中在振动方向上。
另外，在{100}取向的方向是与第一电极2a和第二电极2b相对的方向正交的方向中的、压电陶瓷1的第一面1a和第二面1b的长度方向时，也能获得更高的振动效果。所以，{100}取向的方向优选为压电陶瓷1的第一面1a和第二面1b的长度方向。
应予说明，专利文献1中记载的压电元件是利用来自基板的晶体生长来控制晶体取向的，因此只能使其在一对电极相对的方向上进行晶体取向。
然而，本发明的压电元件10不是利用来自基板的晶体生长，因此能够自由地控制取向方向。另外，与单晶不同，从组成控制、加工容易性的观点出发也比较容易在工业上实用化。另外，像上述实施例那样，通过层叠陶瓷生片，还能够得到层叠结构的压电元件。
本发明不限于上述实施方式，可以在本发明的范围内施加各种应用和变形。
符号说明
1压电陶瓷
1a第一面
1b第二面
2a第一电极
2b第二电极
10压电元件

Claims (6)

1.一种压电元件，其特征在于，具备：
含有具有钙钛矿型晶体结构的复合氧化物作为主要成分的压电陶瓷，以及
在所述压电陶瓷的第一面设置的第一电极和在与所述第一面相对的第二面设置的第二电极；
所述压电陶瓷主要具有菱形体晶体结构，
所述压电陶瓷的晶轴为{100}取向，
所述{100}取向的方向是与所述第一电极和所述第二电极相对的方向正交的方向。
2.一种压电元件，其特征在于，具备：
含有具有钙钛矿型晶体结构的复合氧化物作为主要成分的压电陶瓷，以及
在所述压电陶瓷的第一面设置的第一电极和在与所述第一面相对的第二面设置的第二电极；
所述压电陶瓷的晶轴为{100}取向，
所述{100}取向的方向是与所述第一电极和所述第二电极相对的方向正交的方向，
所述压电陶瓷的从{100}取向面观察的X射线衍射图案中的由(002)面和(200)面的衍射构成的复合峰的半峰宽为0.5°以上。
3.根据权利要求1或2所述的压电元件，其特征在于，所述{100}取向的方向是所述第一面和所述第二面的长度方向。
4.根据权利要求1～3中任一项所述的压电元件，其特征在于，所述复合氧化物为PZT。
5.根据权利要求1～3中任一项所述的压电元件，其特征在于，所述复合氧化物为PNN－PZT。
6.根据权利要求1～3中任一项所述的压电元件，其特征在于，所述复合氧化物为PMN－PZT。
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