CN116754107B - High-sensitivity resonant pressure sensor with amplifying structure and signal conditioning method - Google Patents
High-sensitivity resonant pressure sensor with amplifying structure and signal conditioning method Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/10—Measuring force or stress, in general by measuring variations of frequency of stressed vibrating elements, e.g. of stressed strings
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
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Abstract
The invention provides a high-sensitivity resonance pressure sensor with an amplifying structure and a signal conditioning method, relates to the technical field of resonance pressure sensors, and aims to realize a pressure sensor with higher reliability and stability and higher sensitivity and resolution, comprising a pressure sensitive film, a resonance detection structure and two single-stage amplifying structures; the resonance detection structure is provided with a resonance beam; two ends of a resonance beam of the resonance detection structure are respectively provided with the single-stage amplifying structure; the pressure sensitive film is used for sensing external pressure and generating deformation; the single-stage amplifying structure is provided with a plurality of anchor points connected with the pressure sensitive film and is used for amplifying and transmitting the deformation; the resonance detection structure is used for receiving deformation transmitted by the single-stage amplification structure and inducing the external pressure through harmonic waves. The pressure sensor has the advantages of higher sensitivity and resolution and noise reduction.
Description
Technical Field
The invention relates to the technical field of resonant pressure sensors, in particular to a high-sensitivity resonant pressure sensor with an amplifying structure and a signal conditioning method.
Background
In modern engineering and science, pressure sensors play a critical role for measuring and monitoring the pressure of various media.
However, conventional pressure sensors have limitations in terms of sensitivity and resolution, which limit their performance and reliability in some application areas. With the development and application of microelectromechanical systems (MEMS) technology, silicon resonant pressure sensors are becoming a technology of great interest. The silicon resonant pressure sensor measures external pressure using a change in resonant frequency, and has advantages of high accuracy, high sensitivity, and rapid response. However, in order to achieve higher sensitivity and resolution, sensor designs need to overcome some technical challenges. Currently, existing silicon resonant pressure sensors generally have certain limitations in terms of sensitivity and resolution. The low scale factor limits the ability of the sensor to detect small pressure changes, affecting its use in high precision pressure monitoring and control systems. In the prior art, a patent high-sensitivity modal-coupling type silicon resonance pressure sensor and a pressure calculation method thereof (patent number: CN 114354024B) describe a method of converting a conventional frequency detection type silicon resonance pressure sensor into a vibration amplitude type detection to improve the sensitivity of the sensor. However, the design of this patent has some limitations, when the environmental disturbance is large, the amplitude is greatly affected by the environment, the measurement accuracy can be affected, and the range and feasibility of practical application are limited. On the other hand, after the sensitivity of the sensor is improved, new problems may be brought about, such as an increase in signal frequency and amplitude, and an increase in signal distortion and noise, although the detection sensitivity is improved.
Therefore, there is a need for a design that is more reliable, more stable, and less noisy to improve the sensitivity and resolution of silicon resonant pressure sensors.
Disclosure of Invention
The invention aims to provide a high-sensitivity resonance pressure sensor with an amplifying structure and a signal conditioning method, which have higher reliability and stability, higher sensitivity and resolution and lower noise.
The embodiment of the invention is realized by the following technical scheme:
the invention provides a high-sensitivity resonance pressure sensor with an amplifying structure, which comprises a pressure sensitive film, a resonance detection structure and two single-stage amplifying structures; the resonance detection structure is provided with a resonance beam;
two ends of a resonance beam of the resonance detection structure are respectively provided with the single-stage amplifying structure;
the pressure sensitive film is used for sensing external pressure and generating deformation;
the single-stage amplifying structure is provided with a plurality of anchor points connected with the pressure sensitive film and is used for amplifying and transmitting the deformation;
the resonance detection structure is used for receiving deformation transmitted by the single-stage amplification structure and inducing the external pressure through harmonic waves.
Preferably, the single-stage amplifying structure comprises an input beam, an output beam, a lever beam and an anchor point; the input beam is of an elastic structure;
the first end of the first input beam is provided with a first anchor point, the second end of the first input beam is connected with the first end of the first lever beam, and the first input beam and the first lever beam are mutually perpendicular;
the first end of the second input beam is provided with a second anchor point, the second end of the second input beam is connected with the first end of the second lever beam, and the second input beam and the second lever beam are mutually perpendicular;
the second end of the first lever beam is connected with the second end of the second lever beam through an output beam; the output beam is connected to the resonant beam;
and one sides of the first lever beam and the second lever beam, which are close to the resonance beam, are respectively connected with a third anchor point and a fourth anchor point.
Preferably, the output beam includes a first edge, a second edge, and a third edge;
the first end of the first edge is connected with the second end of the first lever beam, and the first end of the third edge is connected with the second end of the second lever beam;
the second end of the first edge and the second end of the third edge are connected through the second edge, and the first edge and the third edge are parallel to each other; the second edge is connected to the resonant beam.
Preferably, the third anchor point and the fourth anchor point are connected to the first lever beam and the second lever beam through a connecting rod, respectively.
Preferably, the resonance detection structure comprises a resonance beam and a plurality of groups of resonance comb tooth structures; the resonant comb tooth structures are distributed on the beam body of the resonant beam.
Preferably, the number of the resonant comb structures is two, and the two resonant comb structures are symmetrical to each other about the central axis of the resonant beam.
Preferably, the resonant comb structure comprises a drive comb and a vibration comb;
the driving comb teeth and the vibrating comb teeth are of structures in which a plurality of comb teeth are vertically arranged on a substrate;
the comb tooth end of the driving comb tooth is opposite to the comb tooth end of the vibrating comb tooth;
and one side of the base of the vibrating comb teeth is close to the resonance beam.
Preferably, the resonant beam is made of silicon material.
In order to solve the above problems, the present invention also provides a method for conditioning a signal of a resonant pressure sensor, which is applied to any one of the above high-sensitivity resonant pressure sensors having an amplifying structure, and includes the following steps:
the resonance sensor acquires an excitation signal;
measuring a resonant frequency of the resonant sensor by a resonant frequency detection circuit;
converting the resonant frequency to an analog signal;
processing the analog signal, the processing including amplifying, filtering and linearizing;
converting the processed analog signal into a digital signal;
the digital signal is filtered, calibrated and data processed, and pressure information is then extracted from the digital signal.
The technical scheme of the embodiment of the invention has at least the following advantages and beneficial effects:
the invention can realize force amplification through a single-stage amplification structure, thereby enhancing the sensitivity and resolution of the pressure sensor;
the specific structural design of the single-stage amplifying structure can avoid overlarge displacement of the single-stage amplifying structure so as to weaken the amplifying effect under the condition of amplifying as much as possible;
the design of the resonance detection structure can effectively avoid the interference of the same vibration mass between the resonance beam and the pressure sensitive film, and is beneficial to further improving the sensitivity and resolution of the resonance pressure sensor;
the resonance detection of the invention is not interfered by the environment, so the measurement stability and reliability are higher, the invention has wider application scene and range, and the feasibility is very high;
the invention further provides a signal conditioning method, which can effectively avoid the problem of noise increase caused by the improvement of the sensitivity of the sensor;
the invention has reasonable design and simple structure, simplifies the hardware structure as much as possible under the condition of ensuring the measurement precision, has high cost performance and is convenient to implement and popularize.
Drawings
FIG. 1 is a schematic diagram of a high sensitivity silicon resonant pressure sensor with lever amplification structure according to an embodiment of the present invention;
FIG. 2 is an equivalent model of a resonant beam and a pressure sensitive membrane provided by an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a single-stage amplifying structure according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a resonance detection structure according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a method for conditioning a resonant pressure sensor signal according to an embodiment of the present invention;
icon: 100-single-stage amplifying structure, 200-resonance detecting structure, 300-pressure sensitive film, 101A-first anchor point, 101B-second anchor point, 102A-first input beam, 102B-second input beam, 103A-first lever beam, 103B-second lever beam, 104A-third anchor point, 104B-fourth anchor point, 105-output beam, 106-connecting rod, 201-vibration comb teeth, 202-driving comb teeth and 203-resonance beam.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Example 1
Referring to fig. 1-4, a high sensitivity resonant pressure sensor with an amplifying structure includes a pressure sensitive membrane 300, a resonant detection structure 200, and two single stage amplifying structures 100; the resonance detection structure 200 is provided with a resonance beam 203;
two ends of the resonance beam 203 of the resonance detection structure 200 are respectively provided with one single-stage amplifying structure 100;
the pressure sensitive film 300 is used for sensing external pressure and generating deformation;
the single-stage amplification structure 100 is provided with a plurality of anchor points connected with the pressure sensitive film 300, and the single-stage amplification structure 100 is used for amplifying and transmitting the deformation;
the resonance detection structure 200 is configured to receive the deformation transmitted by the single-stage amplification structure 100, and induce the external pressure through harmonic waves.
The working principle of the embodiment is as follows:
in the conventional pressure sensor, the pressure sensitive diaphragm is subject to deflection deformation when being subjected to external load, and the deflection deformation of the pressure sensitive diaphragm is a main sensing mechanism, however, due to the small size and limitation of the pressure diaphragm, the generated displacement signal is relatively small, so that the sensitivity and resolution of the sensor are limited.
To improve the sensitivity and resolution of the sensor, the present embodiment incorporates a single stage amplification structure 100. The single-stage amplification structure 100 amplifies the micro displacement generated when the external load acts on the pressure sensitive film 300, and when the external load acts on the pressure sensitive film 300, the single-stage amplification structure 100 on the pressure sensitive film 300 longitudinally displaces, so as to drive the resonance beam 203 at the tail end of the single-stage amplification structure 100 to displace. This displacement amplification effect results in an improved sensitivity, i.e. scale factor, to forces exerted on the resonator beam 203. By combining the design of the resonance detection structure 200, the external pressure applied to the pressure sensitive film 300 can be accurately reflected by measuring the frequency change of the resonance beam 203.
Specifically, as shown in fig. 2, the second-order system formed by the resonance beam 203 and the pressure sensitive film 300 of the pressure sensor is equivalent to a mechanical model, and the whole system can be expressed as a second-order differential equation, wherein the displacement of the resonance beam 203 is the output quantity of the system, and the external pressure is the input quantity of the system. The differential equation describes the motion behavior of the resonant beam 203 under external pressure. In order to avoid the interference of the resonant beam 203 and the resonant mass of the pressure sensitive film 300, an equivalent mass model of the resonant beam 203 is designed to be perpendicular to the direction of the pressure sensitive film 300 under the action of pressure. When the sensor works, the pressure sensitive film 300 is acted by the force in the vertical direction to form a spring damping model of equivalent mass of the pressure sensitive film 300, the pressure effect is transmitted to the fixed end of the H-shaped double-end supporting resonance beam 203 through the silicon island, the spring damping model of equivalent mass of the resonance beam 203 is in the horizontal direction, and the interference of the equivalent vibration mass is almost avoided in theory.
In summary, by the design of the single-stage amplifying structure 100 and the resonance detecting structure 200, the silicon resonance pressure sensor with high sensitivity and accuracy provided in the embodiment can sense the tiny pressure variation more accurately and convert it into a measurable electrical signal for output compared with the conventional design.
Example 2
The present embodiment is based on the technical solution of embodiment 1, and mainly further description is given of the single-stage amplifying structure 100.
As a preferred version of this embodiment, referring to fig. 3, the single stage amplifying structure 100 includes an input beam, an output beam 105, a lever beam, and an anchor point; the input beam is of an elastic structure;
a first anchor point 101A is arranged at a first end of the first input beam 102A, a second end of the first input beam 102A is connected with a first end of the first lever beam 103A, and the first input beam 102A and the first lever beam 103A are mutually perpendicular;
the first end of the second input beam 102B is provided with a second anchor point 101B, the second end of the second input beam 102B is connected with the first end of the second lever beam 103B, and the second input beam 102B and the second lever beam 103B are mutually perpendicular;
the second end of the first lever beam 103A and the second end of the second lever beam 103B are connected by an output beam 105; the output beam 105 is connected to the resonance beam 203;
and one sides of the first lever beam 103A and the second lever beam 103B, which are close to the resonance beam 203, are respectively connected with a third anchor point 104A and a fourth anchor point 104B.
Further, the output beam 105 includes a first edge, a second edge, and a third edge;
a first end of the first edge is connected to a second end of the first lever beam 103A, and a first end of the third edge is connected to a second end of the second lever beam 103B;
the second end of the first edge and the second end of the third edge are connected through the second edge, and the first edge and the third edge are parallel to each other; the second edge is connected to the resonance beam 203.
In addition, the third anchor point 104A and the fourth anchor point 104B are connected to the first lever beam 103A and the second lever beam 103B, respectively, by a connecting rod 106.
In this embodiment, the first input beam and the second input beam 102B are beam structures with a certain elasticity, and are used for generating a change of a resonant frequency, the first input beam and the second input beam 102B are respectively connected with the pressure sensitive film 300 through the first anchor point 101A and the second anchor point 101B, and when the pressure sensitive film 300 is subjected to pressure, the input beams are subjected to force to displace or deform;
the first lever beam 103A and the second lever beam 103B are used to amplify the sensitive element affected by the pressure, for example, amplify the deformation effect of the pressure sensitive film 300 in this embodiment, and can amplify the micro displacement or deformation received by the first input beam 102A and the second input beam 102B correspondingly connected to each other, so as to increase the sensitivity and resolution of the sensor, and the sensitivity of the stress of the resonant beam 203 can be improved by the lever amplification effect, that is, the amplification ratio of the lever beams. The first lever beam 103A and the second lever beam 103B are respectively connected with the pressure sensitive film 300 through a third anchor point 104A and a fourth anchor point 104B, and the displacement is transferred to the resonance beam 203 through the amplification action of the lever beams, so that the elastic rigidity of the resonance beam 203 is changed, and the natural frequency of the resonator is changed;
the final output beam 105 is connected to the resonant beam 203 for pressure signal transfer.
In order to design a micro-lever with the largest magnification, the pivot needs to be flexibly designed, and the rigidity of the input beam, the output beam, the connecting rod, the lever beam and other structures are matched with each other. It is expected that in order to achieve a flexible design, the bending stiffness of the connecting rod should be small, and at the same time, a certain axial stiffness is required, so that the self-displacement is avoided from being too large, and the amplification effect is weakened. The specific magnification can be realized by stress analysis.
Example 3
The embodiment is based on the technical solution of embodiment 1, and referring to fig. 4, a resonance detection structure 200 is mainly described further.
In this embodiment, the resonance detecting structure 200 includes a resonance beam 203 and a plurality of sets of resonance comb structures; the resonant comb structures are distributed on the beam body of the resonant beam 203.
As a further preferable aspect, the number of the resonant comb structures is two, and the two resonant comb structures are symmetrical to each other about the central axis of the resonant beam 203.
In addition, the resonant comb structure includes a driving comb 202 and a vibrating comb 201;
the driving comb teeth 202 and the vibrating comb teeth 201 are all structures with a plurality of comb teeth vertically arranged on a substrate;
the comb teeth ends of the driving comb teeth 202 and the comb teeth ends of the vibrating comb teeth 201 are opposite to each other;
the base side of the vibrating comb 201 is proximate to the resonating beam 203.
The resonant beam 203 is the primary vibrating element in the sensor, and responds to the action of external pressure through the change of natural frequency, and the resonant beam 203 adopts an elongated beam-like structure, and generally has high mechanical rigidity and low damping characteristics.
The vibrating comb 201 is mainly used for generating transverse harmonic vibration, and the vibration acts on the resonant beam 203 to displace the resonant beam 203, thereby causing the frequency of the resonant beam 203 to change. By controlling the excitation current frequency of the vibrating comb teeth 201, the vibration state of the resonant beam 203 can be adjusted, thereby realizing the detection and measurement of the external pressure change, and the vibrating comb teeth 201 are composed of fine metal electrodes and fixed on a silicon substrate. They exhibit a series of parallel finger-like structures, resembling the teeth of a comb. The design and size of the vibrating comb 201 determines the excitation frequency and amplitude of the resonant beam 203.
The driving comb teeth 202 are portions for applying a driving force to the resonance beam 203. It generates a transverse harmonic vibration by applying an excitation current, and transmits energy to the resonance beam 203 to displace and vibrate it. The function of the driving comb 202 is to provide a sufficient driving force to enable the resonance beam 203 to be maintained in a proper vibration state.
The embodiment can work in combination with the single-machine lever structure of embodiment 2, when external pressure acts, the pressure sensitive film 300 deforms and expands outwards after being stressed, the deformation is transmitted to the input beam through the silicon island structure and amplified to the input beam, the input beam drives the lever beam on the diaphragm to longitudinally displace, the deformation is transmitted to the output beam 105 through the amplification of the lever beam, the output beam 105 is connected with the resonance beam 203, so that the elastic rigidity of the resonance beam 203 is changed, and the natural frequency of the resonator is changed; meanwhile, the input beam also shifts along with the deformation of the pressure sensitive film 300, the resistance value of the piezoresistor changes, the output voltage frequency is inconsistent with the natural frequency at the moment, when the excitation current frequency fed back by the closed-loop circuit on the comb teeth is almost the resonance frequency of the resonator, the resonator resonates, and when the vibration reaches balance, the output voltage frequency is the natural frequency of the resonator at the moment. In a certain pressure range, the natural frequency of the resonator has a stable proportional corresponding relation with the pressure to be measured, and the pressure detection can be realized by detecting the change of the natural frequency.
The resonator is driven by static electricity, the resonant working mode is that the resonant beams at the left side and the right side are in dynamic balance and reverse vibration in an XOY plane, a Wheatstone bridge is formed by a vibration pickup resistor and an equivalent silicon resistor, and the change of the resistance value of the piezoresistive material caused by the pressure change is obtained through the bridge, so that the purpose of detecting the resonant frequency of the resonator is achieved.
Example 4
The present embodiment is based on the technical solution of embodiment 1, and mainly further description is given of the material selection of the resonance beam 203.
As a preferable mode of this embodiment, the resonance beam 203 is made of a silicon material. Because silicon has excellent mechanical properties and stable characteristics.
Example 5
The embodiment provides a signal conditioning method for a resonant pressure sensor, which is applied to the high-sensitivity resonant pressure sensor with the amplifying structure provided by any one of the embodiments, and includes the following steps:
the resonance sensor acquires an excitation signal;
measuring a resonant frequency of the resonant sensor by a resonant frequency detection circuit;
converting the resonant frequency to an analog signal;
processing the analog signal, the processing including amplifying, filtering and linearizing;
converting the processed analog signal into a digital signal;
the digital signal is filtered, calibrated and data processed, and pressure information is then extracted from the digital signal.
Specifically, referring to fig. 5, an excitation signal is provided to the resonant sensor, where the excitation signal is usually an ac signal with a specific frequency, and is provided to the sensor through a signal generator or a driving circuit, and the resonant sensor generates a resonance effect under the action of the excitation signal, so that the resonance frequency is changed;
the resonant frequency of the sensor can be measured immediately after using a resonant frequency detection circuit, which may be, for example, a frequency counter or a PLL phase-locked loop circuit, which is preferred in this embodiment;
the measured resonant frequency is a digital frequency signal, the digital frequency signal is required to be converted into an analog signal related to the measured pressure, and the converted analog signal is further processed, amplified, filtered and linearized through an analog signal processing module; the signal amplitude can be increased by amplifying the signal by the amplifying circuit, so that the signal amplitude can be suitable for subsequent reading and processing, noise and spurious signals are removed by the filtering circuit to improve the quality of the signal, and the nonlinear signal output by the sensor is converted into a linear relation by the linearization circuit so as to accurately measure the pressure value;
the processed analog signals need to be converted into digital signals through analog-to-digital conversion so as to be processed and stored, and the analog signals are converted into the digital signals through an analog-to-digital converter (ADC), wherein the digital signals contain measurement information of the pressure sensor;
and finally, filtering, calibrating and data processing are carried out on the digital signals, and the needed pressure information is extracted from the digital signals.
The signal conditioning method of the embodiment can effectively solve the problem of noise increase caused by improving the sensitivity of the sensor.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. The high-sensitivity resonant pressure sensor with the amplifying structure is characterized by comprising a pressure sensitive film (300), a resonant detection structure (200) and two single-stage amplifying structures (100); the resonance detection structure (200) is provided with a resonance beam (203);
two ends of a resonance beam (203) of the resonance detection structure (200) are respectively provided with the single-stage amplifying structure (100);
the pressure sensitive film (300) is used for sensing external pressure and generating deformation;
the single-stage amplification structure (100) is provided with a plurality of anchor points connected with the pressure sensitive film (300), and the single-stage amplification structure (100) is used for amplifying and transmitting the deformation;
the resonance detection structure (200) is used for receiving deformation transmitted by the single-stage amplification structure (100) and inducing the external pressure through harmonic waves;
the single-stage amplifying structure (100) comprises an input beam, an output beam (105), a lever beam and an anchor point; the input beam is of an elastic structure;
a first anchor point (101A) is arranged at the first end of the first input beam (102A), the second end of the first input beam (102A) is connected with the first end of the first lever beam (103A), and the first input beam (102A) and the first lever beam (103A) are mutually perpendicular;
a first end of the second input beam (102B) is provided with a second anchor point (101B), a second end of the second input beam (102B) is connected with a first end of the second lever beam (103B), and the second input beam (102B) and the second lever beam (103B) are mutually perpendicular;
the second end of the first lever beam (103A) and the second end of the second lever beam (103B) are connected by an output beam (105); -the output beam (105) is connected to the resonance beam (203);
a third anchor point (104A) and a fourth anchor point (104B) are respectively connected to one side, close to the resonance beam (203), of the first lever beam (103A) and one side, close to the resonance beam (203), of the second lever beam (103B);
the output beam (105) comprises a first edge, a second edge and a third edge;
a first end of the first edge is connected with a second end of the first lever beam (103A), and a first end of the third edge is connected with a second end of the second lever beam (103B);
the second end of the first edge and the second end of the third edge are connected through the second edge, and the first edge and the third edge are parallel to each other; the second edge is connected to the resonant beam (203);
the third anchor point (104A) and the fourth anchor point (104B) are respectively connected with the first lever beam (103A) and the second lever beam (103B) through a connecting rod (106).
2. The high sensitivity resonant pressure sensor with amplification structure of claim 1, wherein said resonant detection structure (200) comprises a resonant beam (203) and a plurality of sets of resonant comb structures; the resonant comb structures are distributed on the beam body of the resonant beam (203).
3. The high-sensitivity resonant pressure sensor with amplifying structure according to claim 2, wherein the number of the resonant comb structures is two, and the two groups of the resonant comb structures are symmetrical to each other about the central axis of the resonant beam (203).
4. A high sensitivity resonant pressure sensor with amplifying structure according to claim 3, wherein the resonant comb structure comprises a drive comb (202) and a vibrating comb (201);
the driving comb teeth (202) and the vibrating comb teeth (201) are of structures in which a plurality of comb teeth are vertically arranged on a substrate;
the comb tooth end of the driving comb tooth (202) is opposite to the comb tooth end of the vibrating comb tooth (201);
the base side of the vibrating comb teeth (201) is close to the resonance beam (203).
5. The high sensitivity resonant pressure sensor with amplifying structure according to claim 1, wherein the resonant beam (203) is made of silicon material.
6. A method for conditioning a resonant pressure sensor signal, applied to the high-sensitivity resonant pressure sensor with an amplifying structure according to any one of claims 1 to 5, comprising the steps of:
the resonance sensor acquires an excitation signal;
measuring a resonant frequency of the resonant sensor by a resonant frequency detection circuit;
converting the resonant frequency to an analog signal;
processing the analog signal, the processing including amplifying, filtering and linearizing;
converting the processed analog signal into a digital signal;
the digital signal is filtered, calibrated and data processed, and pressure information is then extracted from the digital signal.
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