CN116752122A - 半导体工艺设备及安装方法 - Google Patents
半导体工艺设备及安装方法 Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 163
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
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- 238000009825 accumulation Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/45578—Elongated nozzles, tubes with holes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
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Abstract
本发明提出了一种半导体工艺设备及安装方法,该设备包括进气法兰;反应腔内管,其腔体形成反应区,反应腔内管的下端面可拆卸地设置于进气法兰的内壁上;反应腔内管的侧壁上开设供杂质气体排出的排气口;晶圆支撑架,用于放置若干片晶圆,晶圆支撑架设置于反应腔内管的腔体内,包括一固定于反应腔内管内壁的顶板,顶板上设置若干沿轴向延伸的支撑条,每个支撑条上均开设用于承接晶圆且沿轴向分布的若干栅格,所有支撑条共同承接同一片晶圆;及反应腔外管,用于将反应腔内管中的杂质气体排出,底部密封法兰,用于封闭反应区,与进气法兰的下端面接触。本发明可实现大批量晶圆生产、提高工艺反应腔寿命,还可以减少颗粒污染物。
Description
技术领域
本发明属于半导体领域晶圆制造工艺设备,尤其涉及一种半导体工艺设备及安装方法。
背景技术
在集成电路生产中广泛使用化学气相沉积技术沉积各种半导体单晶外延薄膜,多晶硅薄膜,半绝缘的掺氧多晶硅薄膜,绝缘二氧化硅,氮化硅,磷硅玻璃以及金属薄膜等。化学气相沉积是利用气态物质在固体表面进行化学反应,生产固态沉积物的工艺过程。一般包括四个步骤:反应气体向材料表面扩散,反应气体吸附于材料表面,在材料表面发生化学反应,气态副产物脱离材料表面。在化学气相沉积过程中,选择合适的温度、气体组成、浓度分布、压力等参数就能得到特定性质的薄膜。
目前现有技术采用的都是单片沉积设备技术来实现高质量薄膜的沉积,不能满足客户大批量晶圆生产要求;其次工艺反应腔寿命较短,更换难度大,降低了设备生产效率,提高了晶圆生产成本。
发明内容
本发明的目的在于提供一种半导体工艺设备及安装方法,可实现大批量晶圆生产、提高工艺反应腔寿命,还可以减少颗粒污染物。为实现上述目的,采用如下技术方案:
一种半导体工艺设备,包括:
进气法兰,用于通入工艺气体和吹扫气体至反应腔内管的内腔中;
所述反应腔内管,其腔体形成反应区,其为一顶端封闭,底面敞开的中空结构;所述反应腔内管的下端面可拆卸地设置于所述进气法兰的内壁上;所述反应腔内管的侧壁上开设供杂质气体排出的排气口;
晶圆支撑架,用于放置若干片晶圆,所述晶圆支撑架设置于所述反应腔内管的腔体内,包括若干沿轴向延伸的支撑条,每个所述支撑条上均开设用于承接晶圆且沿轴向分布的若干栅格,所有支撑条共同承接同一片晶圆;所述支撑条之间焊接成一体,所述支撑条的下端承接在底部密封法兰上;
反应腔外管,用于将反应腔内管中的杂质气体排出,所述反应腔外管套设在所述反应腔内管上,其下端面可拆卸地设置于所述进气法兰的外壁上;所述反应腔内管和反应腔外管之间形成用于供杂质气体排出的区域,所述反应腔外管的外壁上设置排气管道,所述杂质气体经反应腔内管的排气口、供杂质气体排出的区域,最后由排气管道排出;
及所述底部密封法兰,用于封闭所述反应区,与所述进气法兰的下端面接触。
优选地,还包括:第一气体分配管和第二气体分配管,均位于反应腔内管的腔体内,所述第一气体分配管和第二气体分配管分别与进气法兰上的一个工艺气体进气口连通;所述第一气体分配管和第二气体分配管上均开设若干沿轴向分布的气体喷出通道。
优选地,与每个晶圆的上表面距离D处均设有两个所述气体喷出通道,其中一个所述气体喷出通道位于所述第一气体分配管,另一个所述气体喷出通道位于所述第二气体分配管。
优选地,还包括:圆周气体分配环,所述圆周气体分配环设置于底部密封法兰的上端面,圆周气体分配环的吹扫气体进气口穿过底部密封法兰,吹扫气体经圆周气体分配环上的气孔进入反应区并扩散。
优选地,还包括:加热模块,所述加热冷却模块包括:
保温单元,罩设于反应腔外管的上段;
加热单元,固定于所述保温单元的内壁上,且贴合所述反应腔外管的外壁上;所述加热单元包括若干沿轴向分布的环形的加热体;
若干外部冷却单元,均固定于所述保温单元的外壁上;所述外部冷却单元为环形且沿轴向分布。
优选地,还包括:
多个外部多点位温度传感器,用于测量对应的加热单元的实时温度,所述外部多点位温度传感器设置于加热单元上;
及内部多点位温度传感器,用于测量反应腔内管内不同点位实时温度,位于反应腔内管的腔体内。
优选地,还包括:第一保温层和第二保温层,均设置在所述反应腔外管的下段外壁上。
优选地,还包括:
支撑环,所述反应腔内管置于所述支撑环上,所述支撑环通过多个螺栓固定于进气法兰的内壁上;
固定压环,所述反应腔外管置于进气法兰上,由所述固定压环压紧反应腔外管,所述固定压环通过多个螺栓连接进气法兰的外壁上。
优选地,所述顶板上支撑条的数量为3。
一种半导体工艺设备的安装方法,包括:
步骤1、将晶圆支撑架至于反应腔内管的腔体内;
步骤2、将反应腔内管置于所述支撑环上,所述支撑环通过多个螺栓固定于进气法兰的内壁上;
步骤3、将反应腔外管套设在反应腔内管,之后将所述反应腔外管置于进气法兰上,由所述固定压环压紧反应腔外管,所述固定压环通过多个螺栓连接进气法兰的外壁上;
步骤4、将加热冷却模块安装于反应腔外管;
步骤5、将所有晶圆传输至对应的栅格处;
步骤6、安装底部密封法兰。
与现有技术相比,本发明的优点为:
(1)为大批量多片立式设备,实现25-200片晶圆批次生产,可大幅提高晶圆生产产能。具体的,晶圆支撑架用于放置若干片晶圆,晶圆支撑架设置于反应腔内管201的腔体内,包括一固定于反应腔内管内壁的顶板,顶板上设置若干沿轴向延伸的支撑条,每个支撑条上均开设用于承接晶圆203且沿轴向分布的若干栅格,所有支撑条共同承接同一片晶圆。栅格之间的距离为d,根据根艺制程不同,可以设定不同的槽距(栅格距)d,从而实现不同数量的晶圆在同一反应腔(反应腔内管的腔体)内进行工艺制程生产,从而实现25-200片晶圆203的大批量、高产能生产。
(2)通过工艺反应腔的优化设计,延长工艺反应腔寿命。具体的,反应腔内、外管设计,可延长反应腔使用寿命,减少使用腔体频繁更换。在工艺过程中,由于反应管与清洗气体反应,长周期的清洗会影响反应管强度,降低使用寿命,而反应腔外管结构复杂,更换成本较高。反应腔内管结构相对简单,成本较低;反应腔内、外管双管设计,可通过仅更换反应管内管即可恢复正常工艺生产;从而延长反应腔外管使用寿命,降低设备维护成本。
(3)通过流场优化设计,实现在晶圆生产过程中膜厚均匀性、及颗粒物数量可控。具体的,独特的多根进气气体分管设计以及进气气体分管上多个孔的分布设计,可以保证气体在反应腔内管上下分布均匀,实现工艺气体均匀分布,实现较好的膜厚均匀性。底部圆周气体分配环设计,可以抑制反应副产物在反应腔底部堆积沉积,减少晶圆表面颗粒污染物数量。
(4)加热冷却模块优化设计,可实现较好的加热单元温度均匀性,实现各晶圆薄膜生长厚度均匀一致。
附图说明
图1为半导体工艺设备的剖视示意图;
图2为反应管内管示意图;
图3为反应管外管示意图;
图4为进气法兰示意图;
图5为进气法兰与第一气体分配管、第二气体分配管示意图;
图6为第一气体分配管或第二气体分配管整体示意图与局部放大图;
图7为第一气体分配管、第二气体分配管与晶圆以及晶圆支撑架相对位置示意图;
图8为反应管内管、反应管外管、进气法兰、底部密封法兰、圆周气体分配环505的安装位置剖视示意图;
图9为圆周气体分配环的示意图。
其中,1-加热冷却模块,101-加热单元,102-外部冷却单元,103-保温单元,104-加热体,105-外部多点位温度传感器,106-内部多点位温度传感器,201-反应腔内管,202-反应腔外管,203-晶圆,301-第一气体分配管,302-第二气体分配管,303-晶圆支撑架,401-第一保温层,402-第二保温层,501-第一密封圈,502-第二密封圈,503-进气法兰,504-底部密封法兰,505-圆周气体分配环,506-支撑环,507-吹扫气体进气口,508-固定压环。
具体实施方式
下面将结合示意图对本发明的半导体工艺设备及安装方法进行更详细的描述,其中表示了本发明的优选实施例,应该理解本领域技术人员可以修改在此描述的本发明,而仍然实现本发明的有利效果。因此,下列描述应当被理解为对于本领域技术人员的广泛知道,而并不作为对本发明的限制。
如图1~9所示,该半导体工艺设备,为大批量多片立式设备,实现25-200片晶圆批次生产,包括:晶圆支撑架303、反应腔内管201、反应腔外管202、进气法兰503、圆周气体分配环505、加热冷却模块1及底部密封法兰504。反应腔内管201和反应腔外管202可由高纯透明石英制造而成。
反应腔内管201,其腔体形成供工艺气体进行反应的反应区,其为一顶端封闭,底面敞开的中空结构;反应腔内管201的下端面可拆卸地设置于进气法兰503的内壁上;反应腔内管201的侧壁上开设供杂质气体(吹扫气体和剩余的工艺气体)排出的排气口,如图2所示。具体的,反应腔内管201置于支撑环506上,支撑环506通过多个螺栓固定于进气法兰503的内壁上。
更具体的,反应腔内管201、进气法兰503、底部密封法兰504,第一密封圈501和第二密封圈502组成密闭的反应区。
反应腔内管201内还设置:第一气体分配管301和第二气体分配管302,均位于反应腔内管201的腔体内,第一气体分配管301和第二气体分配管302分别与进气法兰503上的一个工艺气体进气口连通;第一气体分配管301和第二气体分配管302上均开设若干沿轴向分布的气体喷出通道。其中,气体分配管的数量与外部反应介质种类与数量有关,通常为2到10个。晶圆203置于所有气体分配管围成的区域内。气体分配管上的气体喷出通道形状通常为圆孔或者长腰孔,孔的大小通常为0.5mm-2mm,孔间距通常为5-20mm。
如图7所示,为局部示意图,与每个晶圆203的上表面距离D处均设有两个气体喷出通道,其中一个气体喷出通道位于第一气体分配管301,另一个气体喷出通道位于第二气体分配管302,该设计会保证工艺气体在晶圆203上的均匀分布。
晶圆支撑架303,用于放置若干片晶圆203,晶圆支撑架303设置于反应腔内管201的腔体内,包括若干沿轴向延伸的支撑条,每个支撑条上均开设用于承接晶圆203且沿轴向分布的若干栅格,所有支撑条共同承接同一片晶圆203。支撑条之间焊接成一体,所述支撑条的下端承接(如卡设)在底部密封法兰505上。
更具体的,顶板上支撑条的数量为3,如图1所示,晶圆203由3个支撑条形成三点支撑,晶圆203稳定性好。栅格之间的距离为d,根据根艺制程不同,可以设定不同的槽距(栅格距)d,从而实现不同数量的晶圆203在同一反应腔(反应腔内管201的腔体)内进行工艺制程生产,从而实现25-200片晶圆203的大批量、高产能生产。
反应腔外管202,用于将反应腔内管201中的杂质气体排出,反应腔外管202套设在反应腔内管201上,其下端面可拆卸地设置于进气法兰503的外壁上,具体的,反应腔外管202置于进气法兰503上,由固定压环508压紧反应腔外管202,固定压环508通过多个螺栓连接进气法兰503的外壁上;反应腔内管201和反应腔外管202之间形成用于供杂质气体排出的区域,反应腔外管202的外壁上设置排气管道(如图3所示),杂质气体经反应腔内管201的排气口、供杂质气体排出的区域,最后由排气管道排出。
综上,反应腔内、外管设计,可延长反应腔使用寿命,减少使用腔体频繁更换。具体的在工艺过程中,由于反应管与清洗气体反应,长周期的清洗会影响反应管强度,降低使用寿命,而反应腔外管结构复杂,更换成本较高。反应腔内管结构相对简单,成本较低;反应腔内、外管双管设计,可通过仅更换反应管内管即可恢复正常工艺生产;从而延长反应腔外管使用寿命,降低设备维护成本。
进气法兰503,用于通入工艺气体和吹扫气体至反应腔内管201的内腔中。具体的,如图4~5所示,工艺气体经进气法兰503上不同的进气密封接头进入到对应的气体分配管,如第一气体分配管301和第二气体分配管302。如图8~9所示,吹扫气体从底部圆周气体分配环505的吹扫气体进气口507,经圆周气体分配环505上的气孔进入反应区并像圆周方向扩散,使得吹扫气体圆周方向分配更加均匀。
圆周气体分配环505,圆周气体分配环505设置于底部密封法兰504的上端面,圆周气体分配环505的吹扫气体进气口507穿过底部密封法兰504,吹扫气体从底部密封法兰504进入反应区并扩散。更具体的,圆周气体分配环505圆周方向上均匀分布有孔进为0.5mm-2mm的小孔,吹扫气体会从小孔均匀喷出,孔的数量可以根据工艺气体的流量相应进行调整。防止底部因温度过低产生反应副产物沉积,形成颗粒污染物,影响晶圆工艺制程。
由此,独特的工艺气体进气设计以及底部圆周气体分配环设计,可实现较低的颗粒污染物。具体的,独特的多根进气气体分管设计以及进气气体分管上多个孔的分布设计,可以保证气体在反应腔内管上下分布均匀,实现工艺气体均匀分布,实现较好的膜厚均匀性。底部圆周气体分配环505设计,可以抑制反应副产物在反应腔底部堆积沉积,减少晶圆表面颗粒污染物数量。
底部密封法兰504,用于封闭反应区,现有技术中,将底部密封法兰504压盖在进气法兰503的下端面,以实现其与进气法兰503的下端面接触。
加热冷却模块1包括:保温单元103、加热单元101、外部冷却单元102。
保温单元103,罩设于反应腔外管202的上段。在反应腔外管202的下段外壁上设置第一保温层401和第二保温层402。
加热单元101,可将热能辐射穿过反应腔内管201和反应腔外管202,从而能够实现反应腔内管201内部反应区获得稳定的反应温度。加热单元101固定于保温单元103的内壁上,且贴合反应腔外管202的外壁上;加热单元101包括若干沿轴向分布的环形的加热体104。加热单元101可分为3-8个加热区域,加热区域越多,加热区域温度均匀性越好,但是结构和控制就更复杂。实际应用时可根据制程要求选择合适的加热区域数量。每个区域内包含加热体104,加热体104材质为加热合金,例如FeCrAl合金,WuRe等合金。具体可为丝状、片状或者螺旋状。此类合金在可以在含氧气的氛围内长期使用。由此,多温区、多点控温可实现较好的温度均匀性。
若干外部冷却单元102,均固定于保温单元103的外壁上;外部冷却单元102为环形且沿轴向分布。外部冷却单元102,可以根据设计划分为不同冷却区域,每个冷却区域会通不同温度的冷却媒,可根据工艺制程要求对每个冷却区域的冷却媒流量进行单独设定,从而实现加热单元101的精确控温,控温精度可以达到±0.5℃。即加热模块1外部多区域冷却设计,可实现快速升降温。
加热模块1的温度控制系统主要由多个外部多点位温度传感器105及内部多点位温度传感器106共同实现。
多个外部多点位温度传感器105,用于测量对应的加热单元101的实时温度,外部多点位温度传感器105设置于加热单元101上。
内部多点位温度传感器106,用于测量反应腔内管201内不同点位实时温度,位于反应腔内管201的腔体内。内部多点位温度传感器106,采用双回路串级PID温度控制,一个主回路,一个副回路,提高温控精度,为现有技术。
温控系统的PLC会根据内部多点位温度传感器106实时温度与内部多点位温度传感器106实时温度的差值,对加热模块1的加热单元101的不同加热区域的加热功率进行实时调整,从而达到工艺制程目标温度。
该半导体工艺设备的安装方法,包括:
步骤1、将晶圆支撑架303至于反应腔内管201的腔体内。
步骤2、将反应腔内管201置于支撑环506上,支撑环506通过多个螺栓固定于进气法兰503的内壁上。
步骤3、将反应腔外管202套设在反应腔内管201,之后将反应腔外管202置于进气法兰503上,由固定压环508压紧反应腔外管202,固定压环508通过多个螺栓连接进气法兰503的外壁上。
步骤4、将加热冷却模块1安装于反应腔外管202。
步骤5、将所有晶圆203传输至对应的栅格处。
步骤6、安装底部密封法兰504。具体的,将底部密封法兰504压盖在进气法兰503的下端面,以实现其与进气法兰503的下端面接触。
上述仅为本发明的优选实施例而已,并不对本发明起到任何限制作用。任何所属技术领域的技术人员,在不脱离本发明的技术方案的范围内,对本发明揭露的技术方案和技术内容做任何形式的等同替换或修改等变动,均属未脱离本发明的技术方案的内容,仍属于本发明的保护范围之内。
Claims (10)
1.一种半导体工艺设备,其特征在于,包括:
进气法兰,用于通入工艺气体和吹扫气体至反应腔内管的内腔中;
所述反应腔内管,其腔体形成反应区,其为一顶端封闭,底面敞开的中空结构;所述反应腔内管的下端面可拆卸地设置于所述进气法兰的内壁上;所述反应腔内管的侧壁上开设供杂质气体排出的排气口;
晶圆支撑架,用于放置若干片晶圆,所述晶圆支撑架设置于所述反应腔内管的腔体内,包括若干沿轴向延伸的支撑条,每个所述支撑条上均开设用于承接晶圆且沿轴向分布的若干栅格,所有支撑条共同承接同一片晶圆;所述支撑条之间焊接成一体,所述支撑条的下端承接在底部密封法兰上;
反应腔外管,用于将反应腔内管中的杂质气体排出,所述反应腔外管套设在所述反应腔内管上,其下端面可拆卸地设置于所述进气法兰的外壁上;所述反应腔内管和反应腔外管之间形成用于供杂质气体排出的区域,所述反应腔外管的外壁上设置排气管道,所述杂质气体经反应腔内管的排气口、供杂质气体排出的区域,最后由排气管道排出;
及所述底部密封法兰,用于封闭所述反应区,与所述进气法兰的下端面接触。
2.根据权利要求1所述的半导体工艺设备,其特征在于,还包括:第一气体分配管和第二气体分配管,均位于反应腔内管的腔体内,所述第一气体分配管和第二气体分配管分别与进气法兰上的一个工艺气体进气口连通;所述第一气体分配管和第二气体分配管上均开设若干沿轴向分布的气体喷出通道。
3.根据权利要求2所述的半导体工艺设备,其特征在于,与每个晶圆的上表面距离D处均设有两个所述气体喷出通道,其中一个所述气体喷出通道位于所述第一气体分配管,另一个所述气体喷出通道位于所述第二气体分配管。
4.根据权利要求1所述的半导体工艺设备,其特征在于,还包括:圆周气体分配环,所述圆周气体分配环设置于底部密封法兰的上端面,圆周气体分配环的吹扫气体进气口穿过底部密封法兰,吹扫气体经圆周气体分配环上的气孔进入反应区并扩散。
5.根据权利要求1所述的半导体工艺设备,其特征在于,还包括:加热模块,所述加热冷却模块包括:
保温单元,罩设于反应腔外管的上段;
加热单元,固定于所述保温单元的内壁上,且贴合所述反应腔外管的外壁上;所述加热单元包括若干沿轴向分布的环形的加热体;
若干外部冷却单元,均固定于所述保温单元的外壁上;所述外部冷却单元为环形且沿轴向分布。
6.根据权利要求5所述的半导体工艺设备,其特征在于,还包括:-
多个外部多点位温度传感器,用于测量对应的加热单元的实时温度,所述外部多点位温度传感器设置于加热单元上;
及内部多点位温度传感器,用于测量反应腔内管内不同点位实时温度,位于反应腔内管的腔体内。
7.根据权利要求5所述的半导体工艺设备,其特征在于,还包括:第一保温层和第二保温层,均设置在所述反应腔外管的下段外壁上。
8.根据权利要求1所述的半导体工艺设备,其特征在于,还包括:
支撑环,所述反应腔内管置于所述支撑环上,所述支撑环通过多个螺栓固定于进气法兰的内壁上;
固定压环,所述反应腔外管置于进气法兰上,由所述固定压环压紧反应腔外管,所述固定压环通过多个螺栓连接进气法兰的外壁上。
9.根据权利要求1所述的半导体工艺设备,其特征在于,所述顶板上支撑条的数量为3。
10.一种半导体工艺设备的安装方法,其特征在于,包括:
步骤1、将晶圆支撑架至于反应腔内管的腔体内;
步骤2、将反应腔内管置于所述支撑环上,所述支撑环通过多个螺栓固定于进气法兰的内壁上;
步骤3、将反应腔外管套设在反应腔内管,之后将所述反应腔外管置于进气法兰上,由所述固定压环压紧反应腔外管,所述固定压环通过多个螺栓连接进气法兰的外壁上;
步骤4、将加热冷却模块安装于反应腔外管;
步骤5、将所有晶圆传输至对应的栅格处;
步骤6、安装底部密封法兰。
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