CN116705447A - 一种提高烧结钕铁硼磁体性能一致性的方法及其产品 - Google Patents
一种提高烧结钕铁硼磁体性能一致性的方法及其产品 Download PDFInfo
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Abstract
本发明提供了一种提高烧结钕铁硼磁体性能一致性的方法,涉及钕铁硼磁体技术领域。具体包括以下步骤:将钕铁硼磁体压坯装入烧结炉内,在真空或保护气氛条件下,设定四段式升温工艺进行烧制;其中,所述四段式升温工艺具体包括:S1烧结阶段;S2一级回火阶段;S3二级回火阶段;S4二级时效回火阶段。本发明将现有生产工艺的二级回火阶段,拆分出两个独立的处理工艺:二级回火阶段和二级时效回火阶段,通过改变升温条件、保温时间和风冷时间,使得烧制的钕铁硼磁体性能得到显著改善,尤其是可以明显提高钕铁硼磁体性能的一致性。技术方案简单、高效,无需复杂的装置,尤其适合大规模工业化生产。
Description
技术领域
本发明属于钕铁硼磁体技术领域,具体涉及一种提高烧结钕铁硼磁体性能一致性的方法及其产品。
背景技术
目前,公知的钕铁硼磁体生产是将粉末经过磁场压机压制成压坯,然后使用专用的工装装入烧结炉内,通过设定的烧结升温工艺曲线进行烧制,整个烧制过程包括三个阶段:烧结阶段(烧结升温、保温、冷却)、一级回火阶段(一级升温、保温、冷却)、二级回火阶段(二级升温、保温、冷却),具体工艺如图1所示。但是,由于此工艺的局限性,经过烧制的磁体性能一致性较差,导致影响产品的合格率。重新生产会降低劳动效率,提高生产成本,延误订单交期,从而影响企业经济效益。
综上,研发出一种能提高烧结钕铁硼磁体性能一致性的方法,具有重要的应用价值,也是本领域技术人员亟待解决的技术问题。
发明内容
本发明的目的在于提供一种提高烧结钕铁硼磁体性能一致性的方法,在原生产工艺的二级回火阶段,拆分出两个独立的处理工艺:二级回火阶段和二级时效回火阶段,通过改变升温条件、保温时间和风冷时间,使得烧制的钕铁硼磁体性能得到显著改善,尤其是可以明显提高钕铁硼磁体性能的一致性。
为实现上述目的,本发明提供一种提高烧结钕铁硼磁体性能一致性的方法,具体包括以下步骤:
将钕铁硼磁体压坯装入烧结炉内,在真空或保护气氛条件下,设定四段式升温工艺进行烧制;
其中,所述四段式升温工艺具体包括:
S1烧结阶段;
S2一级回火阶段;
S3二级回火阶段;
S4二级时效回火阶段。
在一优选的实施方式中,所述钕铁硼磁体压坯为本领域常规材料,是将粉末经过磁场压机压制成的压坯,真空条件或保护气氛条件为本领域常规处理方式,其目的是去除氧气对磁体的影响。上述均为本领域常规工艺,可采用本领域技术人员掌握的已知处理方法即可。
在一优选的实施方式中,所述步骤S1中,按1~5℃/min的升温速率,将压坯温度从室温逐步升温到1050℃~1130℃,保温180~600分钟,风冷120~180分钟;更优选的,风冷至400~600℃。
在一优选的实施方式中,所述步骤S2中,将上一步骤处理后的磁体在烧结炉内,按4~8℃/min的升温速率,逐步升温到900~940℃,保温180~300分钟,风冷120~300分钟;更优选的,风冷至室温。
在一优选的实施方式中,所述步骤S3中,将上一步骤处理后的磁体在烧结炉内,按4~8℃/min的升温速率,逐步升温到450~700℃,保温180~300分钟,风冷120~200分钟;更优选的,风冷至200~400℃。
在一优选的实施方式中,所述步骤S4中,将上一步骤处理后的磁体在烧结炉内,按4~8℃/min的升温速率,逐步升温到460~710℃,保温180~360分钟,风冷120~360分钟;更优选的,风冷至室温。
在一优选的实施方式中,所述步骤S4的升温温度比步骤S3的升温温度高5~10℃,在本发明中,额外增加一个煅烧步骤,且第四段升温比第三段升温提高5~10℃能使烧坯内部的温度更接近最佳的回火温度,冷却再升温的过程也更利于提高磁体一致性。
本发明的另一目的在于提供一种上述任意一项制备方法得到的钕铁硼磁体。
与现有技术相比,本发明的技术方案具有如下优点:
本发明中,通过四段式升温工艺处理钕铁硼磁体压坯,可以显著提高钕铁硼磁体性能的一致性。相比于传统三段式升温工艺,本发明提供的技术方案烧制出的钕铁硼磁体性能的极差最小,可有效提高磁体性能的合格率,降低生产成本,提高劳动效率,增加企业经济效益。而且,本发明提供的技术方案简单、高效,无需复杂的装置,尤其适合大规模工业化生产。
附图说明
从下面结合附图对本发明实施例的详细描述中,本发明的这些和/或其它方面和优点将变得更加清楚并更容易理解,其中:
图1为现有技术中三段式烧制钕铁硼磁体的示意图;
图2为本发明方案中四段式烧制钕铁硼磁体的示意图。
具体实施方式
为了使本领域技术人员更好地理解本发明,下面结合附图和具体实施方式对本发明作进一步详细说明,但应当理解本发明的保护范围并不受具体实施方式的限制。
本发明实施例通过提供一种提高烧结钕铁硼磁体性能一致性的方法及其产品,解决现有技术中三段式烧制钕铁硼磁体导致磁体性能一致性较差、合格率第的问题。
下面通过具体实施例详细说明本申请的技术方案:
若未特别指明,本发明中所用技术手段为本领域技术人员所熟知的常规手段,本发明中所用的各种原材料、试剂、仪器和设备等均可通过市场购买得到或者可通过现有方法制备得到。本发明所用试剂如无特殊说明均为分析纯。本发明实施例中所述室温为25±5℃。
实施例1
钕铁硼磁体压坯,用记号笔标号后,装入烧结炉内,在真空条件下,采用四段式升温工艺进行烧制,具体工艺为:
S1烧结阶段:按5℃/min的升温速率,将压坯温度从室温逐步升温到1065℃,保温510分钟,风冷120分钟至500℃左右。
S2一级回火阶段:将上一步骤处理后的磁体在烧结炉内,按8℃/min的升温速率,逐步升温到940℃,保温210分钟,风冷300分钟至室温。
S3二级回火阶段:将上一步骤处理后的磁体在烧结炉内,按6℃/min的升温速率,逐步升温到650℃,保温270分钟,风冷120分钟至300℃。
S4二级时效回火阶段:将上一步骤处理后的磁体在烧结炉内,按8℃/min的升温速率,逐步升温到660℃,保温360分钟,风冷300分钟至室温。
对比例1
将与实施例1完全相同的钕铁硼磁体压坯,用记号笔标号后,装入烧结炉内,在同样的真空条件下,采用现有技术中的三段式升温工艺进行烧制,具体工艺为:
S1烧结阶段:按5℃/min的升温速率,将压坯温度从室温逐步升温到1100℃,保温180分钟,风冷120分钟至500℃左右。
S2一级回火阶段:将上一步骤处理后的磁体在烧结炉内,按8℃/min的升温速率,逐步升温到940℃,保温210分钟,风冷300分钟至室温。
S3二级回火阶段:将上一步骤处理后的磁体在烧结炉内,按6℃/min的升温速率,逐步升温到660℃,保温510分钟,风冷300分钟至室温。
效果例
测试实施例1和对比例1得到产品的磁体性能,结果分别如表1和表2所示。
表1
表2
由表1和表2可以看出,本发明提供的技术方案烧制出的钕铁硼磁体性能的极差最小,产品一致性好,可有效提高产品合格率,降低生产成本。
前述对本发明的具体示例性实施方案的描述是为了说明和例证的目的。这些描述并非想将本发明限定为所公开的精确形式,并且很显然,根据上述教导,可以进行很多改变和变化。对示例性实施例进行选择和描述的目的在于解释本发明的特定原理及其实际应用,从而使得本领域的技术人员能够实现并利用本发明的各种不同的示例性实施方案以及各种不同的选择和改变。本发明的范围意在由权利要求书及其等同形式所限定。
Claims (7)
1.一种提高烧结钕铁硼磁体性能一致性的方法,其特征在于,具体包括以下步骤:将钕铁硼磁体压坯装入烧结炉内,在真空或保护气氛条件下,设定四段式升温工艺进行烧制;
其中,所述四段式升温工艺具体包括:
S1烧结阶段;
S2一级回火阶段;
S3二级回火阶段;
S4二级时效回火阶段。
2.如权利要求1所述的提高烧结钕铁硼磁体性能一致性的方法,其特征在于,所述步骤S1中,按1~5℃/min的升温速率,将压坯温度从室温逐步升温到1050℃~1130℃,保温180~600分钟,风冷120~180分钟。
3.如权利要求2所述的提高烧结钕铁硼磁体性能一致性的方法,其特征在于,所述步骤S2中,将上一步骤处理后的磁体在烧结炉内,按4~8℃/min的升温速率,逐步升温到900~940℃,保温180~300分钟,风冷120~300分钟。
4.如权利要求1所述的提高烧结钕铁硼磁体性能一致性的方法,其特征在于,所述步骤S3中,将上一步骤处理后的磁体在烧结炉内,按4~8℃/min的升温速率,逐步升温到450~700℃,保温180~300分钟,风冷120~200分钟。
5.如权利要求1所述的提高烧结钕铁硼磁体性能一致性的方法,其特征在于,所述步骤S4中,将上一步骤处理后的磁体在烧结炉内,按4~8℃/min的升温速率,逐步升温到460~710℃,保温180~360分钟,风冷120~360分钟。
6.如权利要求5所述的提高烧结钕铁硼磁体性能一致性的方法,其特征在于,所述步骤S4的升温温度比步骤S3的升温温度高5~10℃。
7.如权利要求1-6中任意一项所述方法制备得到的钕铁硼磁体。
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