CN116667133A - Manufacturing method of high-power laser coaxial packaging base - Google Patents
Manufacturing method of high-power laser coaxial packaging base Download PDFInfo
- Publication number
- CN116667133A CN116667133A CN202310818668.6A CN202310818668A CN116667133A CN 116667133 A CN116667133 A CN 116667133A CN 202310818668 A CN202310818668 A CN 202310818668A CN 116667133 A CN116667133 A CN 116667133A
- Authority
- CN
- China
- Prior art keywords
- power laser
- ring
- manufacturing
- lead
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052802 copper Inorganic materials 0.000 claims abstract description 48
- 239000010949 copper Substances 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 36
- 230000000712 assembly Effects 0.000 claims abstract description 15
- 238000000429 assembly Methods 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 238000005219 brazing Methods 0.000 claims abstract description 13
- 238000007789 sealing Methods 0.000 claims abstract description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 27
- 239000000956 alloy Substances 0.000 claims description 27
- 239000011521 glass Substances 0.000 claims description 16
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 11
- 238000005476 soldering Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 7
- 230000004927 fusion Effects 0.000 claims description 5
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 claims description 3
- 238000004080 punching Methods 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 abstract description 7
- 238000003466 welding Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000005394 sealing glass Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02315—Support members, e.g. bases or carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0232—Lead-frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a manufacturing method of a high-power laser coaxial packaging base, which relates to the field of lasers and comprises the steps of prefabricating two groups of wire assemblies, then respectively sealing the two wire assemblies in two mounting holes of a copper base in a non-matching manner through a brazing process, and projecting the upper ends of the wire assemblies from the mounting holes; the copper base is provided with a boss, one side of the boss corresponding to the mounting hole is a chip mounting position, and a metal ring is soldered on the top edge of the copper base; the invention realizes the problem of consistency of chip mounting position and integral precision by using the copper base formed by integral stamping of oxygen-free copper, and has good body heat dissipation function of the oxygen-free copper, thereby controlling the temperature of the high-power laser and enabling the high-power laser to work stably.
Description
Technical Field
The invention belongs to the field of lasers, and particularly relates to a manufacturing method of a high-power laser coaxial packaging base.
Background
As high-power semiconductor lasers are increasingly used in the fields of display illumination, medical treatment, sensing, etc., the packaging requirements in the industry are increasing.
At present, the base adopts partial oxygen-free copper (only the bonding position of the chip), and not all the oxygen-free copper.
The coaxial packaging mode has continuous power smaller than 500mw, the brazing process precision of the oxygen-free copper at the chip position and the base is difficult to control, the assembly and process difficulties are high, the heat dissipation capacity is inferior to that of all the oxygen-free copper, and the problems of high heat resistance, small heat dissipation interface and low power exist.
Therefore, we propose a method for manufacturing a high-power laser coaxial package substrate to solve the above-mentioned problems.
Disclosure of Invention
Aiming at the problems that the prior base adopts partial oxygen-free copper (only the bonding position of a chip), not all the oxygen-free copper, the continuous power of a coaxial packaging mode is less than 500mw, the brazing process precision of the oxygen-free copper at the chip position and the base is difficult to control, the assembly and process difficulties are large, the heat dissipation capacity is not higher than that of all the oxygen-free copper, and the heat resistance value is high, the heat dissipation interface is small and the power is low, the invention provides a manufacturing method of the high-power laser coaxial packaging base.
The invention solves the technical problems by adopting the scheme that: the manufacturing method of the high-power laser coaxial packaging base comprises the steps of prefabricating two groups of lead assemblies, and then respectively sealing the two lead assemblies in two mounting holes of a copper base in a non-matching manner through a brazing process, wherein the upper ends of the lead assemblies protrude out of the mounting holes;
the copper base is provided with a boss, one side of the boss corresponding to the mounting hole is a chip mounting position, and a metal ring is soldered on the top edge of the copper base;
the wire assembly comprises a lead post and an alloy ring, wherein the alloy ring is sleeved on the outer side of the lead post, and a glass ring is sealed between the alloy ring and the lead post in a fusion way to form a stable airtight wire assembly;
the method comprises the following steps:
s1, prefabricating alloy rings, lead posts and a copper base;
s2, performing pretreatment on the alloy ring and the lead column, and performing fusion sealing under high-temperature shielding gas;
s3, glass is fused and sealed between the alloy ring and the lead post through high-temperature sintering for a certain time to form a glass ring, so that a stable airtight lead assembly is formed;
s4, using a soldering material, and respectively sealing the two lead assemblies in the two mounting holes of the copper base in a non-matching way through a soldering process, so that the soldering material can absorb a certain difference of thermal expansion;
and S5, brazing the metal ring at the top edge of the copper base.
As a preferable technical scheme of the invention, the metal ring is an iron-nickel metal ring, and the alloy ring is an iron-nickel alloy ring.
In a preferred embodiment of the present invention, the lead post is a lead of 0.5mm or more.
As a preferable technical scheme of the invention, the lead post is an iron-nickel alloy copper-clad lead.
As a preferred embodiment of the present invention, the alloy ring has an outer diameter of 0.8 to 2.0. 2.0 mm and a wall thickness of 0.1 to 0.3mm.
As a preferable technical scheme of the invention, the glass ring adopts glass matched with the expansion coefficient of the iron-nickel alloy.
As a preferred embodiment of the present invention, the sintering temperature is 600 to 1200 ℃ and the sintering time is 5 to 25 minutes.
As a preferable technical scheme of the invention, the pretreatment is to respectively coarsen and weakly oxidize the alloy ring and the lead post.
As a preferable technical scheme of the invention, the copper base is integrally formed by punching oxygen-free copper.
Compared with the prior art, the invention has the beneficial effects that:
1. the invention realizes the problem of consistency of the mounting position and the integral precision of the chip by using the copper base integrally formed by stamping the oxygen-free copper, and has good body heat dissipation function of the oxygen-free copper, thereby controlling the temperature of the high-power laser and ensuring the high-power laser to work stably.
2. The invention realizes stable air tightness and conductivity by adopting the matching sealing of the lead post, the alloy ring and the glass ring.
3. The invention realizes unmatched pressure sealing by welding the lead assembly and the mounting hole through a brazing process, and absorbs most of stress of expansion and contraction through a soft brazing material.
4. According to the invention, the brazing of the metal ring and the copper base is added, so that the resistance welding process of the copper base and the client iron-nickel alloy pipe cap is realized, and the client process requirements are met.
Drawings
FIG. 1 is a schematic perspective view of the present invention;
FIG. 2 is a schematic top view of the present invention;
FIG. 3 is an exploded view of the present invention.
In the figure: 1 copper base, 11 mounting hole, 2 boss, 3 metal ring, 41 lead column, 42 alloy ring, 43 glass ring, 44 solder material.
Detailed Description
The invention will be further described with reference to the drawings and examples.
Referring to fig. 1-3, the present invention provides a technical scheme of a method for manufacturing a coaxial packaging base of a high-power laser, which comprises:
embodiment one:
according to the process shown in fig. 1-3, two groups of wire assemblies are prefabricated, then the two wire assemblies are respectively sealed in two mounting holes 11 of a copper base 1 in a non-matching way through a brazing process, and the upper ends of the wire assemblies protrude out of the mounting holes 11;
the boss 2 that sets up on the copper base 1, one side that boss 2 corresponds mounting hole 11 is chip mounting department, through using the copper base 1 of the whole stamping forming of oxygen-free copper, realize chip mounting position and whole precision uniformity problem, the good body heat dissipation function of oxygen-free copper, thereby control the temperature of high-power laser, make its steady operation, copper base 1's top edge brazing has metal ring 3, metal ring 3 is the iron nickel metal ring, realize the resistance welding technology of copper base 1 and customer iron nickel alloy pipe cap, satisfy customer's technological requirement.
The lead assembly comprises a lead post 41 and an alloy ring 42, wherein the alloy ring 42 is an iron-nickel alloy ring, the outer diameter of the alloy ring 42 is 0.8-2.0 mm, the wall thickness is 0.1-0.3 mm, and a glass ring 43 is in fusion sealing connection between the alloy ring 42 and the lead post 41 to form the stable airtight lead assembly.
The method comprises the following steps:
s1, prefabricating an alloy ring 42, a lead column 41 and a copper base 1, wherein the copper base 1 is formed by integrally punching oxygen-free copper, the lead column 41 is a lead with the thickness of more than 0.5mm, and an iron-nickel alloy copper-clad lead can be used;
s2, respectively coarsening and performing weak oxidation pretreatment on the alloy ring 42 and the lead column 41;
s3, sintering at the high temperature of 600-1200 ℃ for 5-25 minutes, and sealing glass between the alloy ring 42 and the lead post 41 in a fusion manner to form a glass ring 43, so as to form a stable airtight wire assembly, wherein the glass ring 43 adopts glass matched with the expansion coefficient of the iron-nickel alloy;
s4, using a soldering material, and respectively sealing the two lead assemblies in the two mounting holes 11 of the copper base 1 in a non-matching way through a soldering process, so that the soldering material can absorb a certain difference of thermal expansion;
and S5, brazing the metal ring 3 at the top edge of the copper base 1.
Claims (9)
1. A manufacturing method of a high-power laser coaxial packaging base is characterized by comprising the following steps: prefabricating two groups of wire assemblies, and then respectively sealing the two wire assemblies in two mounting holes of a copper base in a unmatched manner through a brazing process, wherein the upper ends of the wire assemblies protrude out of the mounting holes;
the copper base is provided with a boss, one side of the boss corresponding to the mounting hole is a chip mounting position, and a metal ring is soldered on the top edge of the copper base;
the wire assembly comprises a lead post and an alloy ring, wherein the alloy ring is sleeved on the outer side of the lead post, and a glass ring is sealed between the alloy ring and the lead post in a fusion way to form a stable airtight wire assembly;
the method comprises the following steps:
s1, prefabricating alloy rings, lead posts and a copper base;
s2, carrying out pretreatment on the alloy ring and the lead post;
s3, glass is fused and sealed between the alloy ring and the lead post through high-temperature sintering for a certain time to form a glass ring, so that a stable airtight lead assembly is formed;
s4, using a soldering material, and respectively sealing the two lead assemblies in the two mounting holes of the copper base in a non-matching way through a soldering process, so that the soldering material can absorb a certain difference of thermal expansion;
and S5, brazing the metal ring at the top edge of the copper base.
2. The method for manufacturing the coaxial packaging base of the high-power laser according to claim 1, wherein the method comprises the following steps: the metal ring is an iron-nickel metal ring, and the alloy ring is an iron-nickel alloy ring.
3. The method for manufacturing the coaxial packaging base of the high-power laser according to claim 1, wherein the method comprises the following steps: the lead post is a lead with the thickness of more than 0.5 mm.
4. The method for manufacturing the coaxial packaging base of the high-power laser according to claim 1, wherein the method comprises the following steps: the lead post is an iron-nickel alloy copper-clad lead.
5. The method for manufacturing the high-power laser coaxial packaging base according to claim 1 or 2, wherein the method comprises the following steps: the outer diameter of the alloy ring is 0.8 to 2.0 mm, and the wall thickness is 0.1 to 0.3mm.
6. The method for manufacturing the coaxial packaging base of the high-power laser according to claim 1, wherein the method comprises the following steps: the glass ring adopts glass matched with the expansion coefficient of the iron-nickel alloy.
7. The method for manufacturing the coaxial packaging base of the high-power laser according to claim 1, wherein the method comprises the following steps: the sintering temperature is 600-1200 ℃ and the sintering time is 5-25 minutes.
8. The method for manufacturing the coaxial packaging base of the high-power laser according to claim 1, wherein the method comprises the following steps: the pretreatment is to coarsen and weakly oxidize the alloy ring and the lead post respectively.
9. The method for manufacturing the coaxial packaging base of the high-power laser according to claim 1, wherein the method comprises the following steps: the copper base is integrally formed by punching oxygen-free copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310818668.6A CN116667133A (en) | 2023-08-04 | 2023-08-04 | Manufacturing method of high-power laser coaxial packaging base |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310818668.6A CN116667133A (en) | 2023-08-04 | 2023-08-04 | Manufacturing method of high-power laser coaxial packaging base |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116667133A true CN116667133A (en) | 2023-08-29 |
Family
ID=87728107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310818668.6A Pending CN116667133A (en) | 2023-08-04 | 2023-08-04 | Manufacturing method of high-power laser coaxial packaging base |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116667133A (en) |
-
2023
- 2023-08-04 CN CN202310818668.6A patent/CN116667133A/en active Pending
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|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Country or region after: China Address after: 463000 Road North, 150m east of the intersection of Zhongyuan Avenue and Dongxiang Road, Yicheng District, Zhumadian City, Henan Province Applicant after: Henan Chuansheng Optoelectronics Co.,Ltd. Address before: 463000 Road North, 150m east of the intersection of Zhongyuan Avenue and Dongxiang Road, Yicheng District, Zhumadian City, Henan Province Applicant before: Zhumadian selanggs photoelectric Co.,Ltd. Country or region before: China |