CN220774977U - Multi-chip high-power laser packaging base - Google Patents
Multi-chip high-power laser packaging base Download PDFInfo
- Publication number
- CN220774977U CN220774977U CN202322618950.8U CN202322618950U CN220774977U CN 220774977 U CN220774977 U CN 220774977U CN 202322618950 U CN202322618950 U CN 202322618950U CN 220774977 U CN220774977 U CN 220774977U
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- China
- Prior art keywords
- power laser
- base
- copper base
- chip high
- copper
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052802 copper Inorganic materials 0.000 claims abstract description 45
- 239000010949 copper Substances 0.000 claims abstract description 45
- 239000011521 glass Substances 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 230000004927 fusion Effects 0.000 claims abstract description 5
- 238000005219 brazing Methods 0.000 claims description 11
- 230000007704 transition Effects 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 7
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000004080 punching Methods 0.000 claims description 4
- 230000017525 heat dissipation Effects 0.000 abstract description 7
- 238000005476 soldering Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The utility model discloses a multi-chip high-power laser packaging base, which relates to the field of lasers and comprises a copper base and four groups of prefabricated guide components, wherein the top of the copper base is integrally connected with a boss, the copper base is provided with four mounting holes, the four groups of prefabricated guide components are respectively arranged in the four mounting holes, each prefabricated guide component comprises a guide wire column and a metal ring sleeved outside the guide wire column, and glass rings are sealed between the metal rings and the guide wire column in a fusion manner; the integrated oxygen-free copper base has good body heat dissipation function, so that the temperature of the high-power laser is controlled to enable the high-power laser to continuously and stably work.
Description
Technical Field
The utility model belongs to the field of lasers, and particularly relates to a multi-chip high-power laser packaging base.
Background
With the increasing global environmental awareness, gallium nitride (GaN) light emitting devices have received a great deal of attention, especially in the field of lighting. Semiconductor lasers have entered the mass production age by continuously improving the high brightness and high output of semiconductor devices, but are mainly used for projectors, display light sources, lamps in projectors, and laser televisions instead, and generate red light and blue light.
Semiconductor lasers have rapidly become popular in lighting and display, medical applications in recent years due to their longer lifetime and smaller size compared to light bulbs.
While lasers have many advantages as described above, efforts have been made to develop high-power lasers for laser processing.
The traditional high-power laser packaging base adopts partial oxygen-free copper (only the bonding position of the chip), not all oxygen-free copper, and the continuous power of a single chip packaged by a round TO is less than 500mW, and the defects are that: the brazing process precision of the oxygen-free copper and the base at the chip position is difficult to control, the assembly and process difficulties are high, the heat dissipation capacity is inferior to that of all the oxygen-free copper, the heat conductivity is low, the heat dissipation interface is small, the power of a single chip (small space) is low, and the like.
Therefore, we propose a multi-chip high power laser package base to solve the above-mentioned problems.
Disclosure of Invention
Aiming at the traditional high-power laser packaging base, partial oxygen-free copper (only at the chip bonding position) is adopted, all the oxygen-free copper is not adopted, the continuous power of a single chip packaged by a round TO is less than 500mW, and the defects are that: the utility model provides a multi-chip high-power laser packaging base, which has the problems of difficult control of brazing process precision of oxygen-free copper and a base at a chip position, high assembly and process difficulty, lower heat dissipation capacity than all oxygen-free copper, low heat conductivity, small heat dissipation interface, low power of a single chip (small space) and the like.
The utility model solves the technical problems by adopting the scheme that: the utility model provides a high-power laser instrument encapsulation base of multicore piece, includes copper base and four prefabricated direction subassemblies of group, and the top an organic whole of copper base is connected with the boss, has seted up four mounting holes on the copper base, and four prefabricated direction subassemblies of group set up respectively in four mounting holes, prefabricated wire subassembly includes wire post and cover establish the metal ring in the wire post outside, and the fusion seal has glass ring between metal ring and the wire post.
And N heat sinks are arranged on the side surfaces of the bosses, and LD chips are arranged on the heat sinks.
The glass tube further comprises a tube shell and a transition sealing piece, wherein the tube shell is covered at the top of the copper base, the transition sealing piece is arranged between the tube shell and the copper base, and a glass sheet is arranged in a notch at the top of the tube shell.
Preferably, the assembly further comprises two brazing rings, wherein the two brazing rings are respectively sleeved on the outer sides of the two wire posts, and the brazing rings are brazed in the mounting holes.
Preferably, the copper base and the boss are integrally formed by punching using oxygen-free copper.
Preferably, the metal ring is an iron-nickel alloy ring, the outer diameter of the metal ring is 0.8-2.0 mm, and the wall thickness is 0.1-0.3mm.
Preferably, the glass ring is made of glass that matches the expansion coefficient of the iron-nickel alloy.
Preferably, the top surface of the copper base is rectangular, and the top surface of the boss is rectangular.
Compared with the prior art, the utility model has the beneficial effects that:
1. the utility model realizes multi-chip mounting (1-20 chips) by integrally stamping and forming the large-cavity oxygen-free copper boss and the copper base, realizes the accurate control of the chip mounting position, and the beam combination technology of combining the outputs of the chips is used for obtaining higher continuous power output of 1-500W; the integrated oxygen-free copper base has good body heat dissipation function, so that the temperature of the high-power laser is controlled to enable the high-power laser to continuously and stably work.
2. The utility model adopts the matching sealing of the glass ring, the metal ring and the wire post to realize stable air tightness and conductivity.
3. The utility model adopts the brazing process to realize unmatched pressure sealing by welding the copper base and the prefabricated guide assembly, and absorbs most of stress of expansion and contraction through soft brazing materials.
Drawings
FIG. 1 is a schematic perspective view of the present utility model;
FIG. 2 is an exploded view of the present utility model;
FIG. 3 is a schematic perspective view of a tubeless cover according to the present utility model;
fig. 4 is a schematic cross-sectional elevation view of the present utility model.
In the figure: 11 metal rings, 12 glass rings, 13 wire studs, 14 brazing rings, 21 copper bases, 22 bosses, 3 transition sealing sheets, 4 tube shells, 5 glass sheets, 6 heat sinks, 7 LD chips and 8 mounting holes.
Detailed Description
The utility model will be further described with reference to the drawings and examples.
Referring to fig. 1-4, the present utility model provides a technical solution for a package base of a multi-chip high-power laser:
embodiment one:
according to the embodiment shown in fig. 1-4, the integrated copper-free die comprises a copper base 21 and four groups of prefabricated guide components, a boss 22 is integrally connected to the top of the copper base 21, the copper base 21 and the boss 22 are integrally formed by punching oxygen-free copper, the integral oxygen-free copper is adopted for punching to realize the accurate control of the mounting position of the chip 7, the integral oxygen-free copper is adopted for realizing better heat dissipation capacity, the overlooking surface of the copper base 21 is rectangular, and the overlooking surface of the boss 22 is rectangular.
Four mounting holes 8 are formed in the copper base 21, the four mounting holes 8 are arranged on the front side and the rear side of the boss 22 in pairs, four groups of prefabricated guide assemblies are arranged in the four mounting holes 8, each prefabricated guide assembly comprises a wire post 13 and a metal ring 11 sleeved on the outer side of the wire post 13, each metal ring 11 is an iron-nickel alloy ring, the outer diameter of each metal ring 11 is 0.8-2.0 mm, the wall thickness is 0.1-0.3mm, glass rings 12 are in fusion seal between each metal ring 11 and the corresponding wire post 13, the wire post 13 and the metal rings 11 need pretreatment (roughening and weak oxidation improve the infiltration capacity of products and glass) and fusion seal is realized under high-temperature protective gas, the glass rings 12 adopt glass matched with expansion coefficients of the iron-nickel alloy, and stable air tightness and conductivity are realized by adopting the matching seal of the glass rings 12, the metal rings 11 and the wire posts 13.
The side of the boss 22 is provided with N heat sinks 6, and the LD chip 7 is arranged on the heat sink 6.
Still include tube shell 4 and transition joint piece 3, tube shell 4 cover is established at the top of copper base 21, is provided with transition joint piece 3 between tube shell 4 and the copper base 21, through the brazing that adds transition joint piece 3 and copper base 21, realizes the resistance welding technology of copper base 21 and tube shell 4, installs glass piece 5 in the notch of tube shell 4's the top.
The soldering device further comprises two soldering rings 14, wherein the two soldering rings 14 are respectively sleeved on the outer sides of the two wire posts 13, the soldering rings 14 are soldered in the mounting holes 8, and certain difference of thermal expansion can be absorbed by using the soldering rings 14.
Claims (6)
1. The multi-chip high-power laser packaging base comprises a copper base and four groups of prefabricated guide components, wherein the top of the copper base is integrally connected with a boss, four mounting holes are formed in the copper base, the four groups of prefabricated guide components are respectively arranged in the four mounting holes, each prefabricated guide component comprises a wire column and a metal ring sleeved on the outer side of the wire column, a glass ring is sealed between the metal ring and the wire column in a fusion way,
the method is characterized in that: n heat sinks are arranged on the side surfaces of the bosses, and LD chips are arranged on the heat sinks;
the glass tube further comprises a tube shell and a transition sealing piece, wherein the tube shell is covered at the top of the copper base, the transition sealing piece is arranged between the tube shell and the copper base, and a glass sheet is arranged in a notch at the top of the tube shell.
2. The multi-chip high power laser package base of claim 1, wherein: the two brazing rings are respectively sleeved on the outer sides of the two wire columns, and the brazing rings are brazed in the mounting holes.
3. The multi-chip high power laser package base of claim 1, wherein: the copper base and the boss are integrally formed by punching oxygen-free copper.
4. The multi-chip high power laser package base of claim 1, wherein: the metal ring is an iron-nickel alloy ring, the outer diameter of the metal ring is 0.8-2.0 mm, and the wall thickness is 0.1-0.3mm.
5. The multi-chip high power laser package base of claim 4, wherein: the glass ring adopts glass matched with the expansion coefficient of the iron-nickel alloy.
6. The multi-chip high power laser package base of claim 1, wherein: the overlooking surface of the copper base is rectangular, and the overlooking surface of the boss is rectangular.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202322618950.8U CN220774977U (en) | 2023-09-26 | 2023-09-26 | Multi-chip high-power laser packaging base |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202322618950.8U CN220774977U (en) | 2023-09-26 | 2023-09-26 | Multi-chip high-power laser packaging base |
Publications (1)
Publication Number | Publication Date |
---|---|
CN220774977U true CN220774977U (en) | 2024-04-12 |
Family
ID=90621085
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN202322618950.8U Active CN220774977U (en) | 2023-09-26 | 2023-09-26 | Multi-chip high-power laser packaging base |
Country Status (1)
Country | Link |
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CN (1) | CN220774977U (en) |
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2023
- 2023-09-26 CN CN202322618950.8U patent/CN220774977U/en active Active
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Legal Events
Date | Code | Title | Description |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address |
Address after: 463000 Road North, 150m east of the intersection of Zhongyuan Avenue and Dongxiang Road, Yicheng District, Zhumadian City, Henan Province Patentee after: Henan Chuansheng Optoelectronics Co.,Ltd. Country or region after: China Address before: 463000 Road North, 150m east of the intersection of Zhongyuan Avenue and Dongxiang Road, Yicheng District, Zhumadian City, Henan Province Patentee before: Zhumadian selanggs photoelectric Co.,Ltd. Country or region before: China |