CN116593399B - Ultra-fast time-resolved shadow imaging system and testing method based on sCMOS - Google Patents
Ultra-fast time-resolved shadow imaging system and testing method based on sCMOS Download PDFInfo
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- CN116593399B CN116593399B CN202310868882.2A CN202310868882A CN116593399B CN 116593399 B CN116593399 B CN 116593399B CN 202310868882 A CN202310868882 A CN 202310868882A CN 116593399 B CN116593399 B CN 116593399B
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- 238000001514 detection method Methods 0.000 claims abstract description 80
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- 238000012545 processing Methods 0.000 claims abstract description 35
- 238000005086 pumping Methods 0.000 claims abstract description 22
- 238000004154 testing of material Methods 0.000 claims abstract description 21
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A90/00—Technologies having an indirect contribution to adaptation to climate change
- Y02A90/10—Information and communication technologies [ICT] supporting adaptation to climate change, e.g. for weather forecasting or climate simulation
Abstract
The invention relates to the technical field of laser processing, and provides an ultrafast time-resolved shadow imaging system and a testing method based on sCMOS, wherein the system comprises the following components: the device comprises a femtosecond light source module, an optical path delay module, a sample position observation module, a first laser frequency multiplication module, a second laser frequency multiplication module, a material testing module, an acquisition module and a data processing module; the femtosecond light source module is used for outputting femtosecond pulse laser, forming pumping light and detection light through beam splitting, transmitting the pumping light to the second laser frequency doubling module and transmitting the detection light to the optical path delay module; the material testing module is used for moving the sample, enabling the pump light and the detection light to be beaten on the sample, and filtering out scattered pump light so as to conduct testing; the acquisition module is used for acquiring test data; the data processing module is used for controlling each module and displaying the collected test data.
Description
Technical Field
The invention relates to the technical field of laser processing, in particular to an ultrafast time-resolved shadow imaging system and a testing method based on sCMOS.
Background
With the development of society, high-tech equipment is moving toward miniaturization and miniaturization. The femtosecond laser processing technology is inoculated, and has the advantages of short duration, high power, high processing precision, non-contact, no pollution, no cutter abrasion and the like, thereby being very important to be applied to micro-nano processing. The femtosecond laser processing process is a physical process involving multiple time scales such as femtosecond-picosecond-nanosecond-subtle-millisecond-second, and the like, and because of extremely strong instantaneous energy of the femtosecond laser, many factors which can be ignored in the conventional processing method can also influence the femtosecond laser processing process, for example, the femtosecond laser can generate light field distribution reforming (such as light filament generation) due to nonlinear action with air when in air propagation, and the uncertainty of the processing result of the femtosecond laser is greatly increased by coupling of various influencing factors. Extreme physical conditions of the femtosecond laser also generate extreme thermodynamic phenomena during material processing, such as electron-lattice imbalance during the action of the femtosecond laser and the substance (so-called double temperature phenomenon). For example, the super-strong characteristic of the femtosecond laser light field can ionize the originally transparent material, and a large amount of free electrons are instantaneously generated, so that the material shows an instantaneous metal state. The action mechanism between the femtosecond laser and the material is very complex, the influence factors are numerous, and a plurality of mechanisms still exist so far, which belong to unknown needs to be explored. Therefore, in order to better control the femtosecond laser processing, a more thorough understanding of the process of the femtosecond laser processing is required.
The shadow imaging system in the prior art cannot observe the ultra-fast femtosecond laser processing process, and has the problem that monitoring in a very short time cannot be observed. Two defects which cannot be observed in the existing femtosecond laser machining process are: (1) obtaining a material state at a shorter time in the processing process; (2) a plasma spraying process in the laser processing process.
Disclosure of Invention
The invention mainly solves the technical problem that a shadow imaging system in the prior art cannot observe a shorter time scale, and provides an ultrafast time-resolved shadow imaging system based on sCMOS and a testing method thereof, so as to achieve the purpose of improving the accuracy and reliability of femtosecond laser processing by observing a ps time scale femtosecond laser processing process.
The invention provides an ultrafast time-resolved shadow imaging system based on sCMOS, comprising: the device comprises a femtosecond light source module, an optical path delay module, a sample position observation module, a first laser frequency multiplication module, a second laser frequency multiplication module, a material testing module, an acquisition module and a data processing module;
the femtosecond light source module is used for outputting femtosecond pulse laser, forming pumping light and detection light through beam splitting, transmitting the pumping light to the second laser frequency doubling module and transmitting the detection light to the optical path delay module;
the optical path delay module is used for adjusting the optical path of the detection light and then sending the detection light to the first laser frequency doubling module;
the sample position observation module is used for collecting position imaging of a sample;
the first laser frequency doubling module is used for doubling the frequency of the detection light from f to f/2 and collimating the detection light to output the detection light with the frequency of f/2;
the second laser frequency doubling module is used for doubling the frequency of the pumping light from f to f/2 and collimating the pumping light to output the pumping light with the frequency of f/2;
the material testing module is used for moving the sample, enabling the pump light and the detection light to be beaten on the sample, and filtering out scattered pump light so as to conduct testing;
the acquisition module comprises: an sCMOS camera; the sCMOS camera is used for collecting test data;
the data processing module comprises an industrial personal computer and a counter, and is used for controlling the modules and displaying the collected test data.
Preferably, the femto-second light source module includes: the device comprises a femtosecond laser, an electric switch, a beam splitter and a first reflector;
the femtosecond laser outputs femtosecond pulse laser, one part of light is used as pump light through the beam splitter, and the other part of light is used as detection light and is reflected to the optical path delay module through the first reflector;
an electric switch is arranged between the femtosecond laser and the beam splitter.
Preferably, the optical path delay module includes: a displacement platform and a plurality of second reflectors mounted on the displacement platform;
the optical path delay module delays the detection light by 0-8 ns in time; the moving range of the displacement platform is 0-300mm.
Preferably, the sample position observation module includes: an LED light source, a third reflecting mirror, a first half-transmitting half-reflecting mirror, a fifth plano-convex lens and an area array ccd camera;
the LED light source emits white light, and the white light irradiates the sample position of the material testing module through the third reflecting mirror and the first semi-transmitting semi-reflecting mirror;
the first half-transmitting half-reflecting mirror receives reflected light of the sample position and images the reflected light through the fifth plano-convex lens by the area array ccd camera.
Preferably, the first laser frequency doubling module includes: the first plano-convex lens, the first frequency doubling crystal, the second plano-convex lens, the first optical filter and the first attenuation sheet are sequentially arranged;
the first plano-convex lens is used for focusing the detection light;
the first frequency doubling crystal is used for doubling the frequency of the detection light from f to f/2;
the second plano-convex lens is used for collimating the frequency-doubled detection light;
the first optical filter is used for filtering the detection light with the frequency f;
the first attenuation sheet is rotatable and is used for adjusting the power of the detection light.
Preferably, the second laser frequency doubling module includes: the second half-mirror comprises a fourth reflecting mirror, a fourth plano-convex lens, a second frequency doubling crystal, a third plano-convex lens, a second optical filter, a second attenuation sheet and a second half-mirror which are sequentially arranged;
the fourth reflecting mirror is used for receiving and reflecting the pump light;
the fourth plano-convex lens is used for focusing the pump light;
the second frequency doubling crystal is used for doubling the frequency of the pumping light from f to f/2;
the third plano-convex lens is used for collimating the pump light after frequency multiplication;
the second optical filter is used for filtering the pump light with the frequency f;
the second attenuation sheet is rotatable and is used for adjusting the power of the pump light;
the second half mirror emits pump light into the material testing module.
Preferably, the material testing module includes: the device comprises a reflecting unit, a material clamping platform, a pump light focusing objective lens, a sample electric three-dimensional displacement platform and a third optical filter;
the sample is installed on the sample electric three-dimensional displacement table through a material clamping platform;
the reflecting unit is used for reflecting the detection light to the sample;
the pump light focusing objective lens is used for irradiating pump light onto a sample;
and the third filter is used for filtering the scattered pump light.
Preferably, the reflection unit includes: a fifth reflecting mirror, a sixth reflecting mirror, a seventh reflecting mirror, a third half-transmitting half-reflecting mirror and an eighth reflecting mirror;
the fifth reflecting mirror, the sixth reflecting mirror, the seventh reflecting mirror and the third semi-transparent semi-reflecting mirror are sequentially arranged on the same light path;
the eighth reflecting mirror faces the third semi-transparent semi-reflecting mirror;
the material testing module further comprises: a continuous laser; and laser emitted by the continuous laser irradiates the third half-mirror.
Preferably, the sCMOS camera is mounted on a camera three-dimensional displacement table;
and the sCMOS camera is provided with a continuous zoom lens.
Correspondingly, the invention also provides a testing method of the sCMOS-based ultra-fast time-resolved shadow imaging system, which comprises the following steps:
step 1, mounting a sample on a sample electric three-dimensional displacement table;
step 2, starting an ultrafast time-resolved shadow imaging system based on sCMOS, wherein a femtosecond laser outputs a synchronous electric signal to be connected with a counter, and the counter generates a starting electric signal to be connected with the femtosecond laser and the sCMOS camera;
step 3, performing pump detection or plasma test;
when pumping detection is carried out, the femtosecond laser outputs a femtosecond pulse laser, and the femtosecond pulse laser is divided into two beams of light by a beam splitter, wherein one beam is used as pumping light, and the other beam is used as detection light; the detection light path passes through the optical path delay module, so that the detection light can reach the surface of the sample according to the time difference between the detection light and the pump light; the sCMOS camera receives the starting electric signal to generate a camera exposure signal, and the sCMOS camera performs exposure acquisition;
when a plasma test is carried out, the femtosecond laser outputs a femtosecond pulse laser, the femtosecond pulse laser is output to a sample, the sCMOS camera receives a starting electric signal to generate a camera exposure signal, and the sCMOS camera carries out exposure acquisition;
and 4, obtaining data images under different delay time and displaying the data images through the industrial personal computer.
Compared with the prior art, the ultra-fast time-resolved shadow imaging system and the testing method based on sCMOS provided by the invention have the following advantages:
1. in the pump detection mode, the change of the laser on the material in the laser processing process can be observed on the ps scale, and then the parameters of the laser are adjusted by analyzing the change of the material frame by frame so as to perform more accurate and more efficient processing.
2. The invention can also be matched with lasers with different wavelengths for testing, and the influence of the lasers with different wavelengths on the material processing is analyzed under the extremely short time scale (ps magnitude), so that the light source problem of the laser processing is regulated.
3. The method can be used for deeply knowing the relevant information such as the plasma spraying process and the concentration of the material to be tested in the plasma spraying mode, and is beneficial to analyzing the influence of plasma on the processing during laser processing, such as analyzing the influence of plasma shielding on the processing process.
4. The plasma jet detection mode can analyze the plasma jet process frame by frame, and then adjust the laser angle, so as to avoid unstable laser processing caused by the absorption of light energy by the plasma.
Drawings
FIG. 1 is a schematic diagram of the system components of an sCMOS-based ultra-fast time-resolved shadow imaging system provided by the present invention;
FIG. 2 is a schematic view of a three-dimensional displacement table of a camera used in the present invention;
FIG. 3 is a schematic diagram of the cooperation of the sCMOS camera and the continuous zoom lens provided by the invention;
FIG. 4 is a schematic diagram of an instrument signal connection provided by the present invention;
FIG. 5 is a timing diagram of pump detection according to the present invention;
FIG. 6 is a timing diagram of a plasma test performed in accordance with the present invention;
FIG. 7 is a schematic diagram of the instrument signal during pump detection provided by the present invention;
FIG. 8 is pump probe data for pump probing according to the present invention;
FIG. 9 is a schematic diagram of the instrument signals for plasma testing provided by the present invention;
fig. 10 is plasma test data for performing a plasma test according to the present invention.
Reference numerals: a. a femtosecond light source module; b. an optical path delay module; c. a sample position observation module; d1, a first laser frequency doubling module; d2, a second laser frequency doubling module; e. a material testing module; f. an acquisition module; g. a data processing module; 1. a femtosecond laser; 2. an electric switch; 3. a beam splitter; 4. a first mirror; 5. a second mirror; 6. a displacement platform; 7. a first plano-convex lens; 8. a first frequency doubling crystal; 9. a second plano-convex lens; 10. a first optical filter; 11. a first attenuation sheet; 12. an LED light source; 13. a third mirror; 14. a first half mirror; 15. a fifth plano-convex lens; 16. an area array ccd camera; 17. a second half mirror; 18. a second attenuation sheet; 19. a second optical filter; 20. a third plano-convex lens; 21. a second frequency doubling crystal; 22. a fourth plano-convex lens; 23. a fourth mirror; 24. a fifth reflecting mirror; 25. a sixth mirror; 26. a seventh mirror; 27. a third half mirror; 28. a continuous laser; 29. a material clamping platform; 30. an eighth mirror; 31. a pump light focusing objective lens; 32. an electric three-dimensional displacement table for the sample; 33. a third filter; 34. a continuous zoom lens; 35. an sCMOS camera; 36. the adaptor is reinforced.
Description of the embodiments
In order to make the technical problems solved by the invention, the technical scheme adopted and the technical effects achieved clearer, the invention is further described in detail below with reference to the accompanying drawings and the embodiments. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the matters related to the present invention are shown in the accompanying drawings.
As shown in fig. 1, an ultra-fast time-resolved shadow imaging system based on sCMOS according to an embodiment of the present invention includes: the device comprises a femtosecond light source module a, an optical path delay module b, a sample position observation module c, a first laser frequency doubling module d1, a second laser frequency doubling module d2, a material test module e, an acquisition module f and a data processing module g.
The femtosecond light source module a is used for outputting femtosecond pulse laser, forming pumping light and detection light through beam splitting, transmitting the pumping light to the second laser frequency doubling module d2, and transmitting the detection light to the optical path delay module b.
Specifically, the femto-second light source module a includes: the device comprises a femtosecond laser 1, an electric switch 2, a beam splitter 3 and a first reflector 4; the femtosecond laser 1 outputs femtosecond pulse laser, one part of light is used as pump light through the beam splitter 3, and the other part of light is used as detection light and is reflected to the optical path delay module b through the first reflector 4; an electric switch 2 is arranged between the femtosecond laser 1 and the beam splitter 3.
In the femtosecond light source module a, the femtosecond laser 1 outputs a femtosecond pulse laser, and a part of light passing through the beam splitter 3 is used as pump light and the other part of light is used as probe light and inputted to the optical path delay module b. The femtosecond light source module a provides a light source (800 nm pulse light output by the femtosecond laser 1) required for system test and splits laser light into two beams, which respectively enter the inside of the system.
The invention selects the coherent 800nm femtosecond laser 1, the femtosecond laser 1 has a gate trigger function, and the femtosecond laser 1 can emit single pulse through external electric signals, thereby carrying out subsequent accurate measurement.
The optical path delay module b is configured to perform optical path adjustment on the detection light, and then send the detection light to the first laser frequency doubling module d1.
The optical path delay module b includes: a displacement stage 6 and a plurality of second reflecting mirrors 5 mounted on the displacement stage 6; the optical path delay module b delays the detection light by 0-8 ns (10-9 s) in time; the moving range of the displacement platform 6 is 0-300mm.
After the detection light output by the femto-second light source module a enters the displacement platform 6, the detection light is reflected for multiple times in the displacement platform 6 through the second reflecting mirror 5, and then is input into the first laser frequency doubling module d1. The optical path delay module b is used for adjusting the optical path of the detection light in the system, the displacement platform 6 is internally provided with a plurality of second reflecting mirrors 5, the pulse light can be repeatedly used in the platform, and the displacement platform 6 can delay the detection light by 0-8 ns (according to the light speed C=3×108 m/s) in time at maximum.
And the sample position observation module c is used for collecting position imaging of the sample. The sample position observation module c includes: an LED light source 12, a third mirror 13, a first half-mirror 14, a fifth plano-convex lens 15, and an area array ccd camera 16. The LED light source 12 emits white light, and irradiates the white light to a sample position of the material testing module e through the third reflecting mirror 13 and the first semi-transmitting semi-reflecting mirror 14; the first half mirror 14 receives the reflected light from the sample position, and images the reflected light by the planar-convex lens 15 through the planar-convex camera 16.
The LED light source 12 is used for illuminating and recycling the area array ccd camera 16 for imaging, so that an operator can conveniently see the position of a sample, the position of the electric three-dimensional displacement table 32 of the sample can be conveniently adjusted, the sample is positioned at the focal plane of the pump light focusing objective lens 31, and the sample can be conveniently tested to be just the focal position of laser at the moment.
The first laser frequency doubling module d1 is configured to double the frequency of the detection light from f to f/2, and then collimate the detection light to output the detection light with the frequency of f/2. The first laser frequency doubling module d1 includes: the first plano-convex lens 7, the first frequency doubling crystal 8, the second plano-convex lens 9, the first optical filter 10 and the first attenuation sheet 11 are sequentially arranged. The first plano-convex lens 7 is used for focusing the detection light; the first frequency doubling crystal 8 is used for doubling the frequency of the detection light from f to f/2; the second plano-convex lens 9 is used for collimating the frequency-doubled detection light; the first optical filter 10 is configured to filter out the probe light with the frequency f; the first attenuator 11 is rotatable for adjusting the power of the probe light. The laser power can be adjusted at different positions by rotating the first attenuator 11.
In the first laser frequency doubling module d1, detection light is focused through the first plano-convex lens 7 and then is applied to the first frequency doubling crystal 8 to double the frequency of 800nm laser to 400nm laser, the laser beam is collimated and output through the second plano-convex lens 9, the laser with the surplus 800nm is filtered and cleaned through the first optical filter 10, finally pure 400nm laser is output, and the power of the laser can be adjusted through adjusting the first attenuation piece 11. The first frequency doubling crystal 8 and the first optical filter 10 can be switched to adjust whether the output is 400nm light or 800nm light to meet the test of different materials.
The second laser frequency doubling module d2 is configured to double the frequency of the pump light from f to f/2, and then collimate the pump light to output the pump light with the frequency of f/2. The second laser frequency doubling module d2 includes: a fourth reflecting mirror 23, a fourth plano-convex lens 22, a second frequency doubling crystal 21, a third plano-convex lens 20, a second optical filter 19, a second attenuation sheet 18, and a second half mirror 17 are sequentially arranged. The fourth reflecting mirror 23 is configured to receive and reflect the pump light; the fourth plano-convex lens 22 is used for focusing the pump light; the second frequency doubling crystal 21 is configured to frequency-multiply the pump light from the frequency f to f/2; the third plano-convex lens 20 is configured to collimate the pump light after frequency multiplication; the second filter 19 is configured to filter the pump light with the frequency f; the second attenuator 18 is rotatable and is used for adjusting the power of the pump light; the second half mirror 17 emits pump light into the material testing module e.
In the second laser frequency doubling module d2, the pump light is reflected to the fourth plano-convex lens 22 through the fourth reflecting mirror 23, the fourth plano-convex lens 22 is focused and then is applied to the second frequency doubling crystal 21 to double the frequency of 800nm laser to 400nm laser, the laser beam is collimated and output through the third plano-convex lens 20, the laser beam with the surplus 800nm is filtered and cleaned through the second optical filter 19, the pure 400nm laser is finally output, and the power of the laser can be adjusted through adjusting the second attenuation sheet 18. The second frequency doubling crystal 21 and the second optical filter 19 can be switched to adjust whether the output of the second frequency doubling crystal is 400nm light or 800nm light so as to meet the test of different materials. The pump light is emitted into the pump light focusing objective 31 of the material testing module e through the second half mirror 17. In addition, the second half mirror 17 can transmit the white light of the sample position observation module c and the reflected light of the material test module e.
The material testing module e is used for moving the sample, enabling the pump light and the detection light to be beaten on the sample, and filtering out scattered pump light so as to conduct testing.
The material testing module e comprises: the device comprises a reflecting unit, a material clamping platform 29, a pump light focusing objective lens 31, a sample electric three-dimensional displacement table 32 and a third optical filter 33. The sample is arranged on the sample electric three-dimensional displacement table 32 through the material clamping platform 29; the reflecting unit is used for reflecting the detection light to the sample; the pump light focusing objective 31 is used for irradiating pump light onto a sample; the third filter 33 is configured to filter the scattered pump light.
In the material testing module e, the sample is moved by the sample motor-driven three-dimensional displacement stage 32, the pump light and the probe light are impinged on the sample, and the third filter 33 filters out the scattered pump light, thereby performing a test. Those skilled in the art will appreciate that the motorized three-dimensional displacement stage 32 may be replaced with a manual displacement stage.
Specifically, the reflection unit includes: a fifth mirror 24, a sixth mirror 25, a seventh mirror 26, a third half mirror 27, and an eighth mirror 30; the fifth reflecting mirror 24, the sixth reflecting mirror 25, the seventh reflecting mirror 26 and the third half-mirror 27 are sequentially arranged on the same optical path; the eighth mirror 30 faces the third half mirror 27. The material testing module e further comprises: a continuous laser 28; the laser light emitted from the continuous laser 28 is irradiated to the third half mirror 27. Wherein the continuous laser 28 can employ 532nm continuous laser to test longer laser machining process measurement fittings, which are the preferred function of the present system.
The acquisition module f comprises: a sCMOS camera (scentific Complementary Metal Oxide Semiconductor) 35; the sCMOS camera 35 is used to collect test data.
The sCMOS camera 35 is mounted on a camera three-dimensional displacement table; as shown in fig. 2, the position of the sCMOS camera 35 can be adjusted by adjusting the knob of the camera three-dimensional displacement stage. The continuous zoom lens 34 is mounted on the sCMOS camera 35 through the reinforcing adapter 36, so that the sCMOS camera 35 and the continuous zoom lens 34 are ensured to keep a stable fixing device, and the continuous zoom lens 34 is prevented from being unstable due to the influence of gravity factors. The sccmos camera 35 may employ an ander sCMOS18-E3 camera that supports an externally triggered gating mode with a minimum gate width of 2ns and a minimum gating time shift of 10ps, and relies primarily on this function to perform plasma sputtering testing.
The data processing module g comprises an industrial personal computer and a counter and is used for controlling all the modules and displaying the collected test data. The industrial personal computer is mainly responsible for driving and controlling the logic work and data acquisition of the equipment such as a counter, an electric switch 2, an electric three-dimensional displacement table, an sCMOS camera and the like. The counter is one of the core components of the system, and the counter can be an NI-PCIe6612 counter. The main functions are that encoder positioning measurement, event counting, period measurement, pulse width measurement, pulse generation, pulse sequence generation, frequency measurement and the like can be performed.
An ultrafast time-resolved shadow imaging test method based on sCMOS comprises the following steps:
step 1, the sample is mounted on the sample electric three-dimensional displacement table 32.
And system debugging is performed to debug the focal length of the continuous zoom lens 34. The femtosecond laser 1, the counter, and the sCMOS camera 35 are connected through a bnc line as shown in fig. 4.
And 2, starting an ultrafast time-resolved shadow imaging system based on sCMOS, wherein the femtosecond laser 1 outputs a synchronous electric signal to be connected with a counter, and the counter generates a starting electric signal to be connected with the femtosecond laser 1 and the sCMOS camera 35.
Wherein the counter and the sCMOS camera 35 can be set separately.
As shown in fig. 5, when the pumping detection is performed, a time difference Δt1 and a detection light delay time Δt2 are set for the start-up electric signal to reach the sCMOS camera 35.
As shown in fig. 6, when the plasma test is performed, a time difference t1 between the synchronous electric signal and the start electric signal, a time difference Offset between the start electric signal recognized by the sCMOS camera 35 and the start exposure of the sCMOS camera 35, and a time difference Delay between the femtosecond laser 1 and the start electric signal recognized by the sCMOS camera 35 are set.
And step 3, performing pump detection or plasma testing.
When pumping detection is performed, the femtosecond laser 1 outputs a femtosecond pulse laser, and the femtosecond pulse laser is divided into two beams of light by the beam splitter 3, wherein one beam is used as pumping light, and the other beam is used as detection light (which is equivalent to an illumination light source during the acquisition of the sCMOS camera 35); the detection light path passes through the optical path delay module b, so that the detection light can reach the surface of the sample (can also reach in advance) according to the time difference between the detection light and the pump light; the sCMOS camera 35 receives the start-up electric signal to generate a camera exposure signal, and the sCMOS camera 35 performs exposure collection. As shown in fig. 7.
The arrival time of detection light is accurately controlled every time pumping detection, so that the state of a sample under the action of femtosecond laser at different moments and the state of the sample under the different moments are observed, the optical path delay module b can enable the time difference delta t2 of two beams of light to be 8ns at the maximum, the accuracy can reach 1ps, and the speed of a mechanical shutter can not be reached far, so that the system can observe the process of femtosecond laser processing in a mode of more exceeding the mode of independent acquisition of a traditional camera (the traditional camera shooting can only reach ms), and the system can be used for knowing the state change of the femtosecond laser processing on a sample material at different moments in a deeper mode, as shown in fig. 8.
When the plasma test is performed, the femtosecond laser 1 outputs a femtosecond pulse laser to the sample, the sCMOS camera 35 receives the starting electric signal to generate a camera exposure signal, and the sCMOS camera 35 performs exposure collection. As shown in fig. 9.
The femtosecond pulse laser 1 outputs a femtosecond pulse laser on the light path part, and the femtosecond pulse laser is very narrow and only 35fs wide and is focused by the pumping light focusing objective lens, so that the energy at the focusing position is very high, plasma can be generated when the laser is hit on the surface of a sample material, the plasma test does not need to detect light, and the plasma can emit light by only adding a filter to filter out the pumping light. The results of the plasma sputtering process test during the femtosecond process are shown in fig. 10.
And 4, obtaining data images under different delay time and displaying the data images through the industrial personal computer.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments is modified or some or all of the technical features are replaced equivalently, so that the essence of the corresponding technical scheme does not deviate from the scope of the technical scheme of the embodiments of the present invention.
Claims (9)
1. An sCMOS-based ultra-fast time-resolved shadow imaging system, comprising: the device comprises a femtosecond light source module (a), an optical path delay module (b), a sample position observation module (c), a first laser frequency doubling module (d 1), a second laser frequency doubling module (d 2), a material test module (e), an acquisition module (f) and a data processing module (g);
the femtosecond light source module (a) is used for outputting femtosecond pulse laser, forming pumping light and detection light through beam splitting, transmitting the pumping light to the second laser frequency doubling module (d 2) and transmitting the detection light to the optical path delay module (b);
the optical path delay module (b) is used for performing optical path adjustment on the detection light and then sending the detection light to the first laser frequency doubling module (d 1);
the sample position observation module (c) is used for collecting position imaging of a sample; the sample position observation module (c) includes: an LED light source (12), a third reflecting mirror (13), a first half-reflecting mirror (14), a fifth plano-convex lens (15) and an area array ccd camera (16); the LED light source (12) emits white light, and the white light irradiates the sample position of the material testing module (e) through the third reflecting mirror (13) and the first semi-transparent semi-reflecting mirror (14); the first half-mirror (14) receives reflected light of a sample position, and the reflected light passes through a fifth plano-convex lens (15) to be imaged by the area array ccd camera (16);
the first laser frequency doubling module (d 1) is used for doubling the frequency of the detection light from f to f/2 and collimating the detection light to output the detection light with the frequency of f/2;
the second laser frequency doubling module (d 2) is used for doubling the frequency of the pump light from f to f/2 and collimating the pump light to output the pump light with the frequency of f/2;
the material testing module (e) is used for moving the sample, enabling the pump light and the detection light to be beaten on the sample, and filtering out scattered pump light so as to conduct testing;
the acquisition module (f) comprises: -a sCMOS camera (35); -the sCMOS camera (35) is for acquiring test data;
the data processing module (g) comprises an industrial personal computer and a counter, and is used for controlling all the modules and displaying the collected test data.
2. The sCMOS-based ultra-fast time-resolved shadow imaging system of claim 1, wherein the femto-second light source module (a) comprises: the device comprises a femtosecond laser (1), an electric switch (2), a beam splitter (3) and a first reflector (4);
the femtosecond laser (1) outputs femtosecond pulse laser, one part of light is used as pump light through the beam splitter (3), and the other part of light is used as detection light and reflected to the optical path delay module (b) through the first reflector (4);
an electric switch (2) is arranged between the femtosecond laser (1) and the beam splitter (3).
3. The sCMOS-based ultra-fast time-resolved shadow imaging system of claim 1, wherein the optical path delay module (b) comprises: a displacement platform (6) and a plurality of second reflectors (5) mounted on the displacement platform (6);
the optical path delay module (b) delays the detection light by 0-8 ns in time; the moving range of the displacement platform (6) is 0-300mm.
4. The sCMOS-based ultra-fast time-resolved shadow imaging system according to claim 1, characterized in that the first laser doubling module (d 1) comprises: the first plano-convex lens (7), the first frequency doubling crystal (8), the second plano-convex lens (9), the first optical filter (10) and the first attenuation sheet (11) are sequentially arranged;
the first plano-convex lens (7) is used for focusing the detection light;
the first frequency doubling crystal (8) is used for doubling the frequency of the detection light from f to f/2;
the second plano-convex lens (9) is used for collimating the frequency-doubled detection light;
the first optical filter (10) is used for filtering the detection light with the frequency f;
the first attenuation sheet (11) is rotatable and is used for adjusting the power of the detection light.
5. The sCMOS-based ultra-fast time-resolved shadow imaging system according to claim 4, characterized in that the second laser doubling module (d 2) comprises: the fourth reflecting mirror (23), the fourth plano-convex lens (22), the second frequency doubling crystal (21), the third plano-convex lens (20), the second optical filter (19), the second attenuation sheet (18) and the second semi-transparent semi-reflecting mirror (17) are sequentially arranged;
-said fourth mirror (23) for receiving and reflecting pump light;
the fourth plano-convex lens (22) is used for focusing pump light;
the second frequency doubling crystal (21) is used for doubling the frequency of the pump light from f to f/2;
the third plano-convex lens (20) is used for collimating the pump light after frequency multiplication;
the second optical filter (19) is used for filtering the pump light with the frequency f;
the second attenuation sheet (18) is rotatable and is used for adjusting the power of the pump light;
the second half mirror (17) emits pump light into the material testing module (e).
6. The sCMOS-based ultra-fast time-resolved shadow imaging system of claim 1, wherein the material testing module (e) comprises: the device comprises a reflecting unit, a material clamping platform (29), a pump light focusing objective lens (31), a sample electric three-dimensional displacement table (32) and a third optical filter (33);
the sample is arranged on the sample electric three-dimensional displacement table (32) through a material clamping platform (29);
the reflecting unit is used for reflecting the detection light to the sample;
the pump light focusing objective lens (31) is used for irradiating pump light onto a sample;
the third filter (33) is used for filtering the scattered pump light.
7. The sCMOS-based ultra-fast time-resolved shadow imaging system of claim 6, wherein the reflection unit comprises: a fifth reflecting mirror (24), a sixth reflecting mirror (25), a seventh reflecting mirror (26), a third half-mirror (27), and an eighth reflecting mirror (30);
the fifth reflecting mirror (24), the sixth reflecting mirror (25), the seventh reflecting mirror (26) and the third semi-transparent semi-reflecting mirror (27) are sequentially arranged on the same light path;
the eighth reflecting mirror (30) faces the third semi-transparent semi-reflecting mirror (27);
the material testing module (e) further comprises: a continuous laser (28); the laser light emitted from the continuous laser (28) irradiates a third half mirror (27).
8. The sCMOS-based ultra-fast time-resolved shadow imaging system of claim 1, characterized in that the sCMOS camera (35) is mounted on a camera three-dimensional displacement stage;
a continuous zoom lens (34) is mounted on the sCMOS camera (35).
9. A method of testing an sCMOS-based ultra-fast time-resolved shadow imaging system according to any of claims 1 to 8, comprising the following steps:
step 1, mounting a sample on a sample electric three-dimensional displacement table (32);
step 2, starting an ultrafast time-resolved shadow imaging system based on sCMOS, wherein a femtosecond laser (1) outputs a synchronous electric signal to be connected with a counter, and the counter generates a starting electric signal to be connected with the femtosecond laser (1) and an sCMOS camera (35);
step 3, performing pump detection or plasma test;
when pumping detection is carried out, the femtosecond laser (1) outputs a femtosecond pulse laser, and the femtosecond pulse laser is divided into two beams of light by the beam splitter (3), wherein one beam is used as pumping light, and the other beam is used as detection light; the detection light path passes through the optical path delay module (b), so that the detection light can reach the surface of the sample according to the time difference between the detection light and the pump light; the sCMOS camera (35) receives the starting electric signal to generate a camera exposure signal, and the sCMOS camera (35) performs exposure acquisition;
when a plasma test is carried out, the femtosecond laser (1) outputs a femtosecond pulse laser to a sample, the sCMOS camera (35) receives a starting electric signal to generate a camera exposure signal, and the sCMOS camera (35) carries out exposure collection;
and 4, obtaining data images under different delay time and displaying the data images through the industrial personal computer.
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