CN114367735A - Method for measuring ultrafast laser micromachining transient temperature - Google Patents
Method for measuring ultrafast laser micromachining transient temperature Download PDFInfo
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- CN114367735A CN114367735A CN202210161506.5A CN202210161506A CN114367735A CN 114367735 A CN114367735 A CN 114367735A CN 202210161506 A CN202210161506 A CN 202210161506A CN 114367735 A CN114367735 A CN 114367735A
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- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000005459 micromachining Methods 0.000 title claims abstract description 17
- 230000001052 transient effect Effects 0.000 title claims abstract description 13
- 238000001228 spectrum Methods 0.000 claims abstract description 31
- 230000005457 Black-body radiation Effects 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 27
- 238000003754 machining Methods 0.000 claims abstract description 4
- 101000694017 Homo sapiens Sodium channel protein type 5 subunit alpha Proteins 0.000 claims description 14
- 238000005070 sampling Methods 0.000 claims description 6
- 238000005286 illumination Methods 0.000 claims description 4
- 108091006146 Channels Proteins 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims description 3
- 238000007514 turning Methods 0.000 claims description 2
- 239000000523 sample Substances 0.000 description 12
- 238000005259 measurement Methods 0.000 description 5
- 238000009529 body temperature measurement Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000001637 plasma atomic emission spectroscopy Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000002860 competitive effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- GNSKLFRGEWLPPA-ZSJDYOACSA-M potassium;dideuterio phosphate Chemical compound [K+].[2H]OP([O-])(=O)O[2H] GNSKLFRGEWLPPA-ZSJDYOACSA-M 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Spectrometry And Color Measurement (AREA)
Abstract
A method for measuring the transient temperature of ultrafast laser micromachining includes such steps as providing a ultrafast laser micromachining unit, high-precision machining and collecting synchronization system, spectrum collecting system and specimen shape observing system. The processing and collecting high-precision synchronization system enables the time zero point of the material processing start to be accurately calibrated, the ultrafast laser micromachining device is utilized to carry out laser ultrafast pulse processing on the interior of the material, then the blackbody radiation spectrum at any time (nanosecond magnitude) after the processing start is collected by the spectrum collection system, and the temperature at the time is calculated by drawing. In the research process, the morphology of the processed part can be observed by using a morphology observation system, so that the research work of measuring the temperature of the material after the ultrafast laser processing is completed.
Description
Technical Field
The invention relates to a method for measuring the temperature of a processing material processed by ultrafast laser by using a spectral measurement technology.
Background
Because the quality of the laser processing workpiece is controlled by the requirements of more and more accuracy and rapidness in recent years, more and more technical innovations emerge in the aspects of methods and precision in laser processing temperature measurement. These include, for example: langmuir probe method, laser induced plasma emission spectroscopy, time resolved projection method, pump detection method, blackbody radiation method, and the like. The most mature methods at present are mainly the Langmuir probe method by vacuum electrode bias measurement and the laser induced plasma emission spectroscopy using the Boltzmann profile. The temperature measuring methods have very important significance for monitoring the quality of laser processing. Technical parameters such as pulse power, repetition rate, pulse width, and wavelength of the laser can all affect the calculation of the material temperature.
The blackbody radiation spectrum is a distribution law function of photon energy distribution formed after a substance radiates photons, and the distribution law function is also called as Planckian formula. Since the distribution law function has an exponential term corresponding to the characteristic temperature, the temperature can be measured by capturing the blackbody radiation spectrum. The temperature measurement by the blackbody radiation method has been applied to the fields of medical temperature measurement, equipment temperature monitoring, aviation, automobiles, navigation and the like for a long time.
In 2004, c.w.carr et al first observed black body radiation spectra in laser induced processing of materials DKDP (potassium dideuterium phosphate), sapphire, fused silica, etc., using nanosecond laser pulses. Further, in the following work, the femtosecond laser-induced DKDP crystal was also tried, and a spectrogram mainly including nonlinear second harmonic was observed.
The blackbody radiation spectrum method is later discovered by various methods, mainly the blackbody radiation spectrum has no competitive advantage compared with the energy level spectrum, but the blackbody radiation spectrum is an emission spectrum which does not need energy level information and exists for various materials and environments, and has remarkable significance for rapid temperature measurement of various materials and environments. In order to measure the blackbody radiation spectrum of the ultrafast laser processing, a device which can detect the blackbody radiation spectrum of the ultrafast laser processing inside the material is needed, so that the temperature is calculated by utilizing the Planck formula. In order to measure the nanosecond-level temperature change of the processing part, the measurement of the black body radiation line with the corresponding precision is required to be measured. The nanosecond scale is already very limiting for ICCD operation, since there is an unavoidable delay of the photocathode switch opening for ICCD operation, e.g. we use ultrafast laser pulses acting inside a dielectric fused silica of 1cm x 1mm, the ICCD does not yet open the photocathode when the blackbody radiation spectrum reaches the inside of the spectrometer, and the time zero for ICCD measurement is actually the material blackbody radiation spectrum at 20 nanoseconds until the ICCD opens the photocathode. Therefore, a device for calibrating the processing time zero point needs to be designed, so that the photocathode can be ensured to be just opened when the laser processing action reaches the material and correspond to the time zero point. From the foregoing, it would be desirable to provide a method for measuring ultrafast laser micro-machining transient temperature using blackbody radiation.
Disclosure of Invention
The invention aims to solve the problem of measuring the transient temperature of a material after ultrafast laser micromachining, and provides a processing device for measuring the temperature of the material after ultrafast laser micromachining by using a blackbody radiation method, wherein the physical phenomenon of generating a blackbody radiation spectrum by inducing the material by ultrafast laser is utilized. The method has the advantages of simple structure, easy construction and safe and reliable operation process, can finish the collection work of black body radiation spectrums of a series of nanosecond-scale moments in various materials processed by single-pulse ultrafast laser, carries out nonlinear fitting by using a Planck formula through drawing software, calculates the temperature of the corresponding moment, and can finish a temperature change curve chart at any time if time domain evolution requirements exist.
The technical solution of the invention is as follows:
a method for measuring the transient temperature of ultrafast laser micro machining, which comprises an ultrafast laser micro machining device, and is characterized in that the system also comprises: a high-precision processing and collecting synchronization system, a spectrum collecting system and a sample appearance observing system;
the ultrafast laser micromachining device comprises an ultrafast laser, a dichroic mirror for reflecting the ultrafast laser, a microscope objective for focusing the ultrafast laser to a material processing area, a three-dimensional mechanical motion objective table and a sample placed on the objective table. Ultrafast laser from ultrafast laser outgoing reflects to the microscope objective through the dichroic mirror, focuses on the inside of the sample through the microscope objective, realizes the single pulse processing.
The processing and collecting high-precision synchronization system comprises a photodiode for collecting part of reflected laser, an oscilloscope comprising at least two channels and a signal delay generator. The pulse of a part of laser reflected by the surface of the material is received by the photodiode and transmitted to the oscilloscope through a lead, and simultaneously the ultrafast laser is turned on and simultaneously the ICCD is guided to turn on the photocathode for spectrum sampling through the trigger signal of the switch. The ICCD photocathode switch signal is connected with the signal delay generator through a lead and then is connected with the oscilloscope, the waveforms of the two signals have time delay, and the rising edges of the waveforms of the two signals are overlapped by adjusting the delay amount of the signal demonstration generator, so that the time zero point is calibrated.
The spectrum acquisition system comprises a semi-transparent semi-reflecting mirror, a lens, a spectrometer and an ICCD sampling device, wherein the semi-transparent semi-reflecting mirror is used for reflecting the blackbody radiation spectrum and ensuring imaging. The semi-transparent and semi-reflective part reflects signals into a lens, then focuses the signals to the aperture of the spectrometer, and then black body radiation signals can be collected once every n (n can be set randomly) nanoseconds. And then the black body radiation spectrum signal at each moment is fitted by using a Planck formula by using graph software, and the fitting parameters can calculate the temperature at each acquisition moment.
The sample appearance observation system comprises an illumination system and a CCD image acquisition device. And (3) turning on the lighting system, and acquiring the appearance of the processed part of the material through the CCD, so that the processing effect can be further known.
Compared with the prior art, the invention has the following technical effects:
the invention utilizes the relation between the blackbody radiation and the temperature of the material after the ultrafast laser processing, is different from other spectral line measuring methods, the blackbody radiation spectrum is a continuous radiation spectrum which can be established by any substance heat radiation, and is established for different materials, so the method can measure the processing transient temperature of the material with various attributes.
The invention has stable performance and provides a reliable and efficient way for nanosecond-level accurate measurement of the temperature of the material after ultrafast laser processing.
Drawings
FIG. 1 is a schematic diagram of a method for measuring transient temperature of ultrafast laser micro-machining
Detailed Description
The invention is further illustrated with reference to the following figures and examples, which should not be construed as limiting the scope of the invention.
Referring to fig. 1, fig. 1 is a schematic diagram of a method for measuring transient temperature of ultrafast laser micromachining, and as shown in the figure, the present invention provides an apparatus for measuring ultrafast laser micromachining, including: a processing and collecting high-precision synchronization system, a spectrum collecting system and a sample appearance observing system.
The ultrafast laser micromachining device comprises an ultrafast laser 1, a dichroic mirror 3 for reflecting the ultrafast laser, a microscope objective 4 for focusing the ultrafast laser to a material processing area, a three-dimensional mechanical motion objective table 6 and a sample 5 placed on the objective table.
The processing and collecting high-precision synchronization system comprises a photodiode 15 for collecting part of reflected laser, an oscilloscope 12 comprising at least two channels and a signal delay generator 11.
The spectrum acquisition system comprises a half-transmitting and half-reflecting mirror 7 for reflecting the blackbody radiation spectrum and ensuring imaging, a lens 9, a spectrometer 10 and an ICCD sampling device 16.
The sample appearance observation system comprises an illumination system 14 and a CCD image acquisition device 13.
The measuring method comprises the following specific steps:
in the first step, the time zero of the acquired signal is calibrated. Ultrafast laser 2 from ultrafast laser 1 outgoing reflects to microscope objective 4 through dichroic mirror 3, focuses on the inside of sample 5 through microscope objective 4, and the instant of single pulse processing can reflect out the pulse of a part of laser through the material surface and be received by photodiode 15 and pass through the wire and transmit oscilloscope, and the trigger signal through the switch when ultrafast laser opens simultaneously, instructs ICCD collection system 16 to open the photocathode and carry out the spectrum sampling. An ICCD acquisition system 16 is characterized in that a photocathode switch signal is connected with a signal delay generator 11 through a lead and then connected to an oscilloscope 12, the waveforms of the two signals have time delay, and the rising edges of the waveforms of the two signals are overlapped by adjusting the delay amount of the signal delay generator 11, so that the time zero point is calibrated.
And secondly, the ultrafast laser 2 is reflected to a microscope objective 4 through a dichroic mirror 3 and is focused to the inside of a sample 6 through the microscope objective, the sample is fixed on an objective table 5, and the three-dimensional objective table 5 can move to realize single-pulse precision machining. After the processing is finished, the black body radiation light 8 is collected by the microscope objective 4, penetrates through the dichroic mirror 3, is reflected by the semi-transmitting semi-reflecting mirror 7 to enter the lens 9, and then is focused to the aperture of the spectrometer 10, and then the black body radiation signal can be collected once every n (n can be set randomly) nanoseconds. And then the black body radiation spectrum signal at each moment is fitted by using a Planck formula by using graph software, and the fitting parameters can calculate the temperature at each acquisition moment.
And thirdly, after the processing is finished, the lighting system 14 can be turned on, and the CCD image acquisition equipment 13 is used for acquiring the appearance of the processed part of the material, so that the processing effect can be further known.
Claims (4)
1. A method for measuring ultrafast laser micro-processing transient temperature comprises an ultrafast laser micro-processing device, a processing and collecting high-precision synchronization system, a spectrum collecting system and a sample morphology observation system; the processing and collecting high-precision synchronization system comprises a photodiode (15) for collecting part of reflected laser, an oscilloscope (12) comprising at least two channels and a signal delay generator (11); the spectrum acquisition system comprises a half-transmitting and half-reflecting mirror (7), a lens (9), a spectrometer (10) and an ICCD sampling device (16); the sample appearance observation system comprises an illumination system (14) and a CCD image acquisition device (13); the ultrafast laser micromachining device comprises an ultrafast laser (1), a dichroic mirror (3) for reflecting the ultrafast laser, a microscope objective (4) for focusing the ultrafast laser to a material processing area, a three-dimensional mechanical motion objective table (6) and a sample (5) placed on the objective table; the method is characterized by comprising the following specific steps:
calibrating the time zero point of the collected signal: ultrafast laser (2) emitted from an ultrafast laser (1) is reflected into a microscope objective (4) through a dichroic mirror (3) and is focused into a sample (5) through the microscope objective (4), at the moment of single-pulse processing, a pulse of a part of laser is reflected through the surface of the sample (5) and is received by a photodiode (15) and transmitted to an oscilloscope (12) through a lead, and simultaneously when the ultrafast laser is turned on, an ICCD acquisition system (16) is guided to turn on a photocathode to perform spectrum sampling through a trigger signal of a switch; an ICCD acquisition system (16) is connected with a signal delay generator (11) through a lead and then is connected with an oscilloscope (12), so that a time zero point is calibrated by means of signal representation;
processing: ultrafast laser (2) is reflected to a microscope objective (4) through a dichroic mirror (3) and is focused into a sample (6) through the microscope objective, the sample is fixed on an objective table (5), and the three-dimensional objective table (5) moves to realize single-pulse precision machining;
and thirdly, after the processing is finished, black body radiation light (8) reflected by the sample (6) is collected by the microscope objective (4), penetrates through the dichroic mirror (3), is reflected by the semi-transparent semi-reflecting mirror (7) to enter the lens (9), and then is focused to a diaphragm opening of the spectrometer (10), and then black body radiation signals are collected once every n nanoseconds, and a Planck formula is utilized for fitting to obtain the temperature at each collection time.
2. The method for measuring the ultrafast laser micro machining transient temperature according to claim 1, further comprising turning on an illumination system (14) to collect the morphology of the machining site of the material through a CCD image collecting device (13).
3. The method of measuring ultrafast laser micro process transient temperature of claim 1, wherein: the semi-transparent and semi-reflective mirror (7) is parallelly arranged on the dichroic mirror (3), and the light outlet of the semi-transparent and semi-reflective mirror (7) is connected with the lens (9) through a cage structure to ensure collimation.
4. The method of measuring ultrafast laser micro process transient temperature of claim 1, wherein: in the step I, the rising edges of the waveforms of the two signals are overlapped by adjusting the delay amount of the signal delay generator (11), so that the time zero point is calibrated.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115971641A (en) * | 2022-12-21 | 2023-04-18 | 中国科学院上海光学精密机械研究所 | Non-contact type repair equipment and method for micro-nano-scale optical chip |
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| CN115971641B (en) * | 2022-12-21 | 2024-04-12 | 中国科学院上海光学精密机械研究所 | Non-contact repair equipment and method for micro-nano level optical chip |
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