CN116479529A - 一种利用三氯化磷合成磷化铟外延薄膜晶片的生产工艺 - Google Patents
一种利用三氯化磷合成磷化铟外延薄膜晶片的生产工艺 Download PDFInfo
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- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 title claims abstract description 35
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 230000002194 synthesizing effect Effects 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims abstract description 30
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 24
- 239000001257 hydrogen Substances 0.000 claims abstract description 24
- 239000010453 quartz Substances 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052738 indium Inorganic materials 0.000 claims abstract description 17
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 150000002431 hydrogen Chemical class 0.000 claims abstract description 9
- 230000005587 bubbling Effects 0.000 claims abstract description 4
- 238000007323 disproportionation reaction Methods 0.000 claims abstract description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 5
- 239000007789 gas Substances 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 13
- 239000002994 raw material Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000010494 dissociation reaction Methods 0.000 description 3
- 230000005593 dissociations Effects 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical group [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- H—ELECTRICITY
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Abstract
本发明公开了一种利用三氯化磷合成磷化铟外延薄膜晶片的生产工艺,一种利用三氯化磷合成磷化铟薄膜晶片的生产工艺,将石英反应管放在气相外延反应腔中,以盛装砷化镓晶圆衬底的石英舟放置于反应腔中源区,通入高纯氢气,缓慢加热三氯化磷储罐至100~110℃,使得储罐中的三氯化磷气化,联通三氯化磷储罐、氢气储罐、石英反应管,通过氢气鼓泡将三氯化磷引入到石英反应管中,持续通入过量氢气并缓慢加热到700~800℃,在上述温度和压力下,在铟源上方将持续发生歧化反应生成磷化铟薄膜晶片。本发明提供了一种磷化铟薄膜晶片的工艺路线,可以生成满足特定需求的晶片材料。
Description
技术领域
本发明涉及化合物半导体材料合成技术领域,尤其涉及一种利用三氯化磷合成磷化铟外延薄膜晶片的生产工艺。
背景技术
磷化铟是一种性能优良的具有闪锌矿结构的III-V族化合物半导体材料,其具有饱和电子漂移速度高、抗辐射能力强、导热性好、光电转换效率高、禁带宽度高等诸多优点,被广泛应用于光通信、高频毫米波器件、光电集成电路和外层空间用太阳电池等领域。
磷化铟的熔点为1070℃,在此温度下,磷化铟有很高的离解压,熔点下的离解压为2.75mpa,在此条件下,磷蒸汽压已超过10mpa,远大于磷化铟的离解压,所以将磷和铟直接在单晶炉内合成磷化铟单晶是非常困难的,一般是将高纯铟和高纯磷先合成磷化铟多晶料,然后再用磷化铟多晶料进行磷化铟单晶生长。但是,磷化铟晶片本身质地很脆,当需要使用微米级厚度的磷化铟薄片时,常见的磷化铟晶片切片无法满足需求。
由于磷和铟直接反应所需的温度、压力条件较为苛刻,导致反应过程非常敏感,易受外界干扰而失败,此外反应时间也较长。此外,传统工艺以高纯铟和高纯红磷为原料,但高纯红磷的生产工艺本身比较复杂,需要一套复杂的流程来实现,价格居高不下的高纯红磷也直接推高了磷化铟的产品成本。
发明内容
本发明的目的是为了解决现有技术中存在的缺点,而提出的一种利用三氯化磷合成磷化铟外延晶片的生产工艺。
为了实现上述目的,本发明采用了如下技术方案:
一种利用三氯化磷合成磷化铟外延晶片的生产工艺,将石英反应管放在气相外延反应腔中,利用高纯氢气携带气态三氯化磷,与砷化镓衬底上的薄层高纯铟反应,合成磷化铟外延薄膜制品,过程分为如下步骤:
步骤一:以盛装砷化镓晶圆衬底的石英舟放置于反应腔中源区,通入高纯氢气,将系统中的空气完全置换,然后在其上快速放置适量高纯铟源;缓慢加热系统达到250℃左右,使得高纯铟完全熔化,并附着于砷化镓衬底表面;
步骤二:缓慢加热三氯化磷储罐至100~110℃,使得储罐中的三氯化磷气化;
步骤三:联通三氯化磷储罐、氢气储罐、石英反应管,通过氢气鼓泡将三氯化磷引入到石英反应管中;
步骤四:持续通入过量氢气并缓慢加热到700~800℃,保持系统压力在1Mpa;
步骤五:在上述温度和压力下,在铟源上方将持续发生如下歧化化学反应:2PCl3+3H2+2In=2InP+6HCl;持续反应2.5hr;
步骤六:向系统中持续通入常温高纯氢气,将两个温区冷却到室温,取出产物,制得磷化铟外延片薄膜成品。
本发明的有益效果为:
本发明:采用三氯化磷混合氢气,与高纯铟合成磷化铟外延晶片外延的工艺,从工艺角度来说,大大缩短了反应时间、降低了反应温度、提高了反应效率,从全流程工艺角度,液态三氯化磷的纯化难度远小于红磷的提纯,其价格也远低于高纯红磷,使用三氯化磷为原料,不仅减少了对上游原材料高纯红磷的依赖,而且降低了生产成本。
实施方式
下面将对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。
需要说明的是,在不冲突的情况下,本申请中的实施例及实施例中的特征可以相互组合。
一种利用三氯化磷合成磷化铟外延薄膜晶片的生产工艺,将石英反应管放在气相外延反应腔中,利用高纯氢气携带气态三氯化磷,与砷化镓衬底上的薄层高纯铟反应,合成磷化铟外延薄膜制品,过程分为如下步骤:
步骤一:以盛装砷化镓晶圆衬底的石英舟放置于反应腔中源区,通入高纯氢气,将系统中的空气完全置换,然后在其上快速放置适量高纯铟源;缓慢加热系统达到250℃左右,使得高纯铟完全熔化,并附着于砷化镓衬底表面;
步骤二:缓慢加热三氯化磷储罐至100~110℃,使得储罐中的三氯化磷气化;
步骤三:联通三氯化磷储罐、氢气储罐、石英反应管,通过氢气鼓泡将三氯化磷引入到石英反应管中;
步骤四:持续通入过量氢气并缓慢加热到700~800℃,保持系统压力在1Mpa;
步骤五:在上述温度和压力下,在铟源上方将持续发生如下歧化化学反应:2PCl3+3H2+2In=2InP+6HCl;持续反应2.5hr;
步骤六:向系统中持续通入常温高纯氢气,将两个温区冷却到室温,取出产物,制得磷化铟外延晶片薄膜成品。
工作原理:采用三氯化磷混合氢气,与高纯铟合成磷化铟外延晶片外延的工艺,从工艺角度来说,大大缩短了反应时间、降低了反应温度、提高了反应效率,从全流程工艺角度,液态三氯化磷的提纯难度远小于红磷的提纯,其价格也远低于高纯红磷,使用三氯化磷为原料,不仅减少了对上游原材料高纯红磷的依赖,而且降低了产品成本。
需要注意的是,这里所使用的术语仅是为了描述具体实施方式,而非意图限制根据本申请的示例性实施方式。如在这里所使用的,除非上下文另外明确指出,否则单数形式也意图包括复数形式,此外,还应当理解的是,当在本说明书中使用术语“包含”和/或“包括”时,其指明存在特征、步骤、操作、器件、组件和/或它们的组合。
需要说明的是,本申请的说明书和权利要求书的术语“第一”、“第二”等是用于区别类似的对象,而不必用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换。此外,术语“包括”和“具有”以及他们的任何变形,意图在于覆盖不排他的包含,例如,包含了一系列步骤或单元的过程、方法、系统、产品或设备不必限于清楚地列出的那些步骤或单元,而是可包括没有清楚地列出的或对于这些过程、方法、产品或设备固有的其它步骤或单元。
以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (1)
1.一种利用三氯化磷合成磷化铟外延薄膜晶片的生产工艺,其特征在于,将石英反应管放在气相外延反应腔中,利用高纯氢气携带气态三氯化磷,与砷化镓衬底上的薄层高纯铟反应,合成磷化铟外延薄膜制品,过程分为如下步骤:
步骤一:以盛装砷化镓晶圆衬底的石英舟放置于反应腔中源区,通入高纯氢气,将系统中的空气完全置换,然后在其上快速放置适量高纯铟源;缓慢加热系统达到250℃左右,使得高纯铟完全熔化,并附着于砷化镓衬底表面;
步骤二:缓慢加热三氯化磷储罐至100~110℃,使得储罐中的三氯化磷气化;
步骤三:联通三氯化磷储罐、氢气储罐、石英反应管,通过氢气鼓泡将三氯化磷引入到石英反应管中;
步骤四:持续通入过量氢气并缓慢加热到700~800℃,保持系统压力在1Mpa;
步骤五:在上述温度和压力下,在铟源上方将持续发生如下歧化化学反应:2PCl3+3H2+2In=2InP+6HCl;持续反应2.5hr;
步骤六:向系统中持续通入常温高纯氢气,将两个温区冷却到室温,取出产物,制得磷化铟外延薄膜晶片成品。
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