CN116365339A - X-band broadband high-power microwave amplifier - Google Patents
X-band broadband high-power microwave amplifier Download PDFInfo
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- CN116365339A CN116365339A CN202310087830.1A CN202310087830A CN116365339A CN 116365339 A CN116365339 A CN 116365339A CN 202310087830 A CN202310087830 A CN 202310087830A CN 116365339 A CN116365339 A CN 116365339A
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Abstract
The invention discloses an X-band broadband high-power microwave amplifier, which comprises: an electron beam emitting structure for generating a high current relativistic electron beam IREB; the electron beam modulation structure is used for modulating and bunching the strong current relativity electron beams IREB and realizing the modulation depth of fundamental current not lower than 10%; the traveling wave extraction structure is used for realizing further clustering of the strong current relativistic electron beams IREB and converting the kinetic energy of the strong current relativistic electron beams IREB after the sufficient clustering into microwave energy for coupling out. The invention adopts the electric tuning mode to popularize the electric tuning broadband HPM source to the high frequency band, can realize HPM output of any frequency point in the working bandwidth of the device by changing the frequency of externally injected microwave signals, has no relation with the working mechanism and the size of the device, and solves the problems of high processing and assembly difficulty, complex experimental adjustment, discontinuous output microwave frequency point and the like of the traditional mechanical tuning broadband HPM oscillator.
Description
Technical Field
The invention relates to a broadband high-power microwave source device in the technical field of high-power microwaves, in particular to an X-band broadband high-power microwave amplifier.
Background
High power microwaves (High Power Microwave, HPM for short) generally refer to electromagnetic waves having peak powers greater than 100MW and frequencies between 1 and 300 GHz. The HPM source is a core component of a high-power microwave system, and converts the kinetic energy of a strong-current relativity electron beam (Intense Relativistic Electron Beams, IREB for short) into microwave energy through a high-frequency electromagnetic structure specially designed in the device, so that directional HPM radiation is generated through a transmitting antenna. According to the frequency bandwidth characteristics of the microwave output by the HPM source, the HPM source can be divided into three types of narrowband, wideband and ultra wideband, and the frequency bandwidth percentages of the three types of HPM sources are respectively <1%,1% -25% and >25%. HPM sources can be classified into two types, HPM oscillator and HPM amplifier, depending on whether there is an injected microwave signal. The focus is herein on broadband HPM sources, especially broadband HPM amplifiers.
At present, frequency tuning modes of broadband HPM sources at home and abroad are mainly divided into two types of electric tuning and mechanical tuning. The electric tuning is to realize the adjustment of the working frequency of the HPM source by changing the electric parameters such as the voltage of the electron beam, and can be specifically divided into an electric tuning electric vacuum HPM source and an electric tuning switch oscillator according to the device structure. The electric tuning electric vacuum HPM source realizes the change of the frequency of a device through the frequency selection characteristic of electron beam voltage, the voltage change of hundreds of kV level can only realize the frequency change of tens of MHz level, and the broadband HPM output is difficult to realize in a high frequency band (X band and above). The electric tuning switch oscillator directly feeds damping sine pulse signals into the broadband antenna to radiate to free space, and the working principle is that one end of a 1/4 wavelength low-resistance transmission line is connected with a short-circuit switch, and the other end is connected with a broadband radiation antenna with higher impedance; the electrical length of the 1/4 wavelength switching oscillator determines the center frequency of the broadband high-power microwave, and as the center frequency increases, the electrical length decreases, and the geometry of the 1/4 wavelength switching oscillator decreases, and the power capacity decreases. Therefore, it is difficult for an electrically tuned switching oscillator to achieve a broadband HPM output in the high frequency band. Although wideband HPM sources have achieved better results in the S-X band, the wideband HPM sources reported so far are limited to wideband HPM oscillators. Meanwhile, the existing broadband HPM oscillator also has certain limitations, and the specific limitations are as follows: (1) The electric tuning broadband HPM source is difficult to popularize to a high frequency band (X wave band and above) due to the working mechanism of the device; (2) The machining and assembling difficulties of the mechanically tuned broadband HPM source are high, the experimental operation is complex, and the frequency tuning is realized by repeatedly and manually adjusting the size of the mechanical structure; (3) Limited by the precision of the mechanical structure, mechanically tuning a wideband HPM oscillator makes it difficult to achieve HPM output at any frequency point within the operating bandwidth.
Disclosure of Invention
The invention aims to solve the technical problems: aiming at the problems in the prior art, the invention provides an X-band broadband high-power microwave amplifier, which realizes the X-band broadband HPM amplifier adopting an electric tuning mode, can popularize an electric tuning broadband HPM source to a high frequency band (X-band and above), can realize HPM output of any frequency point in the working bandwidth of a device by changing the frequency of an externally injected microwave signal, and overcomes the problems of high processing and assembling difficulty, complex experimental adjustment, discontinuous output microwave frequency point and the like of the traditional mechanical tuning broadband HPM oscillator.
In order to solve the technical problems, the invention adopts the following technical scheme:
the invention provides an X-band broadband high-power microwave amplifier, which comprises:
an electron beam emitting structure for generating a high current relativistic electron beam IREB;
the electron beam modulation structure is used for modulating and bunching the strong current relativity electron beams IREB and realizing the modulation depth of fundamental current not lower than 10%;
the traveling wave extraction structure is used for realizing further clustering of the strong current relativistic electron beams IREB and converting the kinetic energy of the strong current relativistic electron beams IREB after the sufficient clustering into microwave energy for coupling output;
the output end of the electron beam emission structure is connected with the input end of the electron beam modulation structure, and the output end of the electron beam modulation structure is connected with the input end of the traveling wave extraction structure.
Optionally, the electron beam emitting structure, the electron beam modulating structure and the traveling wave extracting structure are all rotationally symmetrical structures about the central axis OZ.
Optionally, the electron beam emission structure includes cathode seat, negative pole, positive pole inner tube and positive pole urceolus, the negative pole is located on the cathode seat, positive pole urceolus cover is located the outside of positive pole inner tube and both concentric arrangement, form the drift tube of one section inner radius for R1, the cavity structure that outer radius is R2 between positive pole inner tube and the positive pole urceolus, the negative pole is just to the entry side of drift tube, electron beam modulation structure and travelling wave extraction structure arrange in proper order on the drift tube between positive pole inner tube and the positive pole urceolus.
Optionally, the electron beam modulation structure comprises an extended interaction injection cavity and an extended interaction modulation cavity which are arranged along the length direction of the drift tube in a clearance way, wherein the extended interaction injection cavity is used for high-efficiency absorption of externally injected microwave power and primary modulation of the strong current relativity electron beam IREB; the expansion interaction modulation cavity is used for further increasing the fundamental current modulation depth of the strong current relativity electron beam IREB, and the modulation frequency of the expansion interaction injection cavity and the expansion interaction modulation cavity to the strong current relativity electron beam IREB is consistent with the external injection microwave frequency.
Optionally, the expansion interaction injection cavity is formed by two annular grooves respectively arranged on the anode inner cylinder and the anode outer cylinder, and a gap between the anode inner cylinder and the anode outer cylinder, and signal communication is performed between the two annular grooves through a coupling hole or a coupling ring to form an expansion interaction structure, and a microwave injection ring communicated with the annular grooves is arranged on the anode outer cylinder.
Optionally, the expanding interaction modulation cavity is formed by two annular grooves respectively arranged on the anode inner cylinder and the anode outer cylinder and a gap between the anode inner cylinder and the anode outer cylinder, and the two annular grooves are in signal communication through a coupling hole or a coupling ring to form an expanding interaction structure.
Optionally, signal communication is performed between the two annular grooves through a coupling ring to form an expanding interaction structure, and a metal disc used for separating the two annular grooves at the inner side of the coupling ring is connected with the anode outer cylinder through a supporting rod or a backflow rod.
Optionally, the traveling wave extraction structure includes reflector, slow wave structure and the output waveguide that the adjacent arrangement in proper order, the reflector comprises two annular grooves that locate positive pole inner tube and positive pole urceolus respectively to and be located the clearance between positive pole inner tube and the positive pole urceolus, the reflector is used for keeping apart electron beam modulation structure and traveling wave extraction structure in order to ensure mutual independence steady operation between electron beam modulation structure and the traveling wave extraction structure.
Optionally, the slow wave structure is a periodic wave structure arranged on at least one of the anode inner cylinder and the anode outer cylinder, and the wave shape in the periodic wave structure can be rectangular, trapezoidal or sine-shaped.
Optionally, the output waveguide is a section of annular cavity arranged between the anode inner cylinder and the anode outer cylinder.
Compared with the prior art, the invention has the following advantages:
1. the invention realizes an X-band wideband HPM amplifier adopting an electric tuning mode, the frequency of the output HPM of the device is adjusted by changing the frequency of an externally injected microwave signal, the frequency adjusting mode is irrelevant to the working mechanism and the size of the device, the electric tuning wideband HPM source can be popularized to a high frequency band (X-band and above), and the electric tuning wideband HPM source can be realized in the high frequency band (X-band and above).
2. The invention realizes the X-band broadband HPM amplifier adopting the electric tuning mode, can realize HPM output of any frequency point in the working bandwidth of the device by changing the frequency of externally injected microwave signals, and solves the problems of high processing and assembling difficulty, complex experimental adjustment, discontinuous output microwave frequency point and the like of the traditional mechanically tuned broadband HPM oscillator.
Drawings
Fig. 1 is a schematic structural diagram of an X-band broadband high-power microwave amplifier in this embodiment.
Fig. 2 is an enlarged schematic view of the structure of the extended interaction implantation chamber in this embodiment.
Fig. 3 is an enlarged schematic structure of the extended interaction modulation cavity in this embodiment.
Fig. 4 is an enlarged schematic view of the structure of the traveling wave extraction in this embodiment.
Fig. 5 is a graph of typical output power and frequency of an X-band wideband high-power microwave amplifier according to this embodiment.
Fig. 6 is a graph of output power of the X-band wideband high power microwave amplifier according to the present embodiment at different injection microwave frequencies.
Fig. 7 is a graph showing the output microwave phase change with time at different injection microwave frequencies of the X-band broadband high-power microwave amplifier according to the present embodiment.
Legend reference numerals illustrate: 1. a cathode base; 2. a cathode; 3. an anode inner cylinder; 4. an anode outer cylinder; 5. expanding the interaction injection cavity; 6. expanding the interaction modulation cavity; 7. a traveling wave extraction structure; 8. a reflector; 9. a slow wave structure; 10. and an output waveguide.
Detailed Description
As shown in fig. 1, this embodiment provides an X-band broadband high-power microwave amplifier, including:
an electron beam emitting structure (shown in fig. 1 a) for generating a strong current relativistic electron beam IREB (Intense Relativistic Electron Beam);
an electron beam modulation structure (shown as B in fig. 1) for realizing modulation and bunching of the intense current relativity electron beams IREB, realizing a fundamental current modulation depth of not less than 10%;
a traveling wave extraction structure (shown in fig. 1C) for further clustering the strong current relativistic electron beams IREB and converting the kinetic energy of the sufficiently clustered strong current relativistic electron beams IREB into microwave energy for coupling out;
the output end of the electron beam emission structure is connected with the input end of the electron beam modulation structure, and the output end of the electron beam modulation structure is connected with the input end of the traveling wave extraction structure.
Referring to fig. 1, in this embodiment, the electron beam emission structure, the electron beam modulation structure, and the traveling wave extraction structure are all rotationally symmetrical structures about a central axis OZ, where R in fig. 1 represents a radial direction, O represents an origin, and Z represents a microwave output direction of the X-band broadband high-power microwave amplifier.
The electron beam emission structure is a common structure in the HPM field of high-power microwave devices. Referring to fig. 1, the electron beam emission structure in this embodiment includes a cathode base 1, a cathode 2, an anode inner cylinder 3 and an anode outer cylinder 4, the cathode 2 is disposed on the cathode base 1, the anode outer cylinder 4 is sleeved outside the anode inner cylinder 3 and concentrically disposed with the anode inner cylinder 3, a section of drift tube with a cavity structure having an inner radius R1 and an outer radius R2 (see fig. 2) is formed between the anode inner cylinder 3 and the anode outer cylinder 4, the cathode 2 is opposite to an inlet side of the drift tube, and the electron beam modulation structure and the traveling wave extraction structure are sequentially disposed on the drift tube between the anode inner cylinder 3 and the anode outer cylinder 4. The dimensional parameters of the cathode seat 1, the cathode 2, the anode inner cylinder 3 and the anode outer cylinder 4 can be obtained by optimizing the working voltage and the working current of the device. In the embodiment, the anode inner cylinder 3 is cylindrical, and the anode outer cylinder 4 is of a tubular structure; the anode inner cylinder 3 and the anode outer cylinder 4 can be made of a conductor material such as stainless steel, oxygen-free copper, etc. as required. Referring to fig. 1, in this embodiment, the axial distance between the electron beam emitting structure and the electron beam modulating structure is L1, and the axial distance between the electron beam modulating structure and the traveling wave extracting structure is L3.
In this embodiment, the electron beam modulation structure includes an extended interaction injection cavity 5 and an extended interaction modulation cavity 6 which are arranged along the length direction of the drift tube in a gap manner, and the extended interaction injection cavity 5 is used for high-efficiency absorption of externally injected microwave power and realizes primary modulation of the strong current relativity electron beam IREB; the expansion interaction modulation cavity 6 is used for further increasing the fundamental current modulation depth of the strong current relativity electron beam IREB, and the modulation frequency of the expansion interaction injection cavity 5 and the expansion interaction modulation cavity 6 on the strong current relativity electron beam IREB is consistent with the frequency of external injection microwaves. Referring to fig. 1, in this embodiment, the axial distance between the extended interaction injection cavity 5 and the extended interaction modulation cavity 6 is L2. The extended interaction injection cavity 5 and the extended interaction modulation cavity 6 are of multi-gap extended interaction structures, coupling channels exist among gaps in the cavities, the frequency sensitivity is weak (compared with a multi-gap cavity structure without a coupling structure), and the absorption of injected microwave power and the pre-modulation of IREB can be realized in a wider frequency range; the expanding interaction injection cavity 5 and the expanding interaction modulation cavity 6 are formed by annular grooves formed on the inner anode outer cylinder and hollow cavity parts between the inner anode outer cylinder; the annular grooves on the inner (outer) conductors are not independent, and signal communication is carried out through the coupling holes or the coupling rings, so that an expanded interaction structure is formed.
As shown in fig. 2, in this embodiment, the expanding interaction injection cavity 5 is formed by two annular grooves respectively provided on the anode inner cylinder 3 and the anode outer cylinder 4, and a gap between the anode inner cylinder 3 and the anode outer cylinder 4, and signal communication is performed between the two annular grooves through a coupling hole or a coupling ring to form an expanding interaction structure, and a microwave injection ring communicated with the annular grooves is provided on the anode outer cylinder 4. The two annular grooves form a double-gap disc-shaped structure for expanding the interaction injection cavity 5, and referring to fig. 3, the outer radius of each annular groove is R3, the inner radius is R4 and R5 respectively, the gap width L5 of one annular groove, the gap width L7 of the other annular groove, and the thickness of the membrane between the two annular grooves is L6.
As shown in fig. 2, in this embodiment, signal communication is performed between the two annular grooves through a coupling ring to form an extended interaction structure, and a metal disc for separating the two annular grooves inside the coupling ring is connected with the anode outer cylinder 4 by a support rod or a reflow rod. Referring to fig. 2, the coupling ring has an outer radius R3, a thickness h1, and a width L6; the support bar or return bar may be configured as desired and will not be described in detail herein. The width of the microwave injection ring is l, and the microwave injection ring is used for introducing an externally injected microwave signal.
As shown in fig. 3, in this embodiment, the expanding interaction modulation cavity 6 is formed by two annular grooves (modulation grooves) respectively provided on the anode inner cylinder 3 and the anode outer cylinder 4, and a gap between the anode inner cylinder 3 and the anode outer cylinder 4, and signal communication is performed between the two annular grooves through a coupling hole or a coupling ring to form an expanding interaction structure. The two annular grooves form a double-gap disc-shaped structure for expanding the interaction modulation cavity 6, referring to fig. 3, the outer radius of each annular groove is R7, the inner radius is R6 and R8 respectively, the gap width L8 of one annular groove is wider than the gap width L10 of the other annular groove, and the thickness of a membrane between the two annular grooves is L9; similarly, in this embodiment, signal communication is performed between the two annular grooves of the extended interaction modulation cavity 6 through the coupling ring to form an extended interaction structure, and the metal disc inside the coupling ring for separating the two annular grooves is connected with the anode outer barrel 4 by adopting a support rod or a backflow rod. Referring to fig. 3, the coupling ring of the extended interaction modulation cavity 6 has an outer radius R7, a thickness h2 and a width L9; the support bar or return bar may be configured as desired and will not be described in detail herein.
As shown in fig. 1 and 4, the traveling wave extraction structure 7 in this embodiment includes a reflector 8, a slow wave structure 9 and an output waveguide 10 that are sequentially and adjacently arranged, where the reflector 8 is formed by two annular grooves respectively provided on the anode inner cylinder 3 and the anode outer cylinder 4, and a gap between the anode inner cylinder 3 and the anode outer cylinder 4, and the reflector 8 is used to isolate the electron beam modulation structure and the traveling wave extraction structure so as to ensure that the electron beam modulation structure and the traveling wave extraction structure work independently and stably. Referring to fig. 4, the reflector 8 has an outer radius R9, an inner radius R10, and a width L11.
In this embodiment, the slow wave structure 9 is a periodic wave structure provided on at least one of the anode inner tube 3 and the anode outer tube 4, and the wave shape in the periodic wave structure may be a rectangular, trapezoidal or sinusoidal structure. The slow wave structure 9 can be a single-side corrugated structure or a double-side corrugated structure, and if the slow wave structure is positioned on one side of the anode inner cylinder 3 and the anode outer cylinder 4, the slow wave structure is a single-side corrugated structure; if the two electrodes are positioned on the anode inner cylinder 3 and the anode outer cylinder 4 at the same time, the double-sided corrugated structure is formed. Referring to fig. 4, the corrugated shape in the periodic corrugated structure in the present embodiment selects a rectangular one-sided corrugated structure, the rectangular periodic structure is composed of a metal portion and a cavity portion, the inner radius is R11, the outer radius is R12, the period length is L13, and the period number is 8; the axial length of the metal part of the rectangular periodic structure is L14, and the axial length of the cavity part is L13-L14; the depth of the rectangular periodic structure is h3; the axial distance between the reflector 8 and the slow wave structure 9 is L12.
In this embodiment, the output waveguide 10 is a section of annular cavity disposed between the anode inner cylinder 3 and the anode outer cylinder 4. Referring to fig. 4, in this embodiment, the output waveguide 10 has an inner radius R11, an outer radius R12, and a length L4.
The working principle of the X-band broadband high-power microwave amplifier of the embodiment is as follows: when an external injection microwave signal is fed into the expansion interaction injection cavity 5, the coaxial working mode is excited at the gap of the expansion interaction injection cavity 5, and the axial electric field of the coaxial working mode can carry out preliminary speed modulation on the passing strong current relativity electron beam IREB; the speed modulation of the strong current relativity electron beam IREB is deepened by the expanding interaction modulation cavity 6, so that the electron beam modulation depth of not less than 10% is realized; when the strong current relativity electron beam IREB with a certain modulation depth passes through the traveling wave extraction structure 7, an alternating electric field with corresponding frequency is excited in the slow wave structure 9; during the first few periods of the slow wave structure 9 (the specific period number is obtained by simulation optimization), the electromagnetic wave can further modulate IREB, and the modulation depth of fundamental wave current of >100% is realized; in the latter few periods of the slow wave structure 9, the strongly-relativistic electron beams IREB of deep bunching are decelerated by the electromagnetic waves, so that the kinetic energy of the strongly-relativistic electron beams IREB is converted into high-power microwave HPM energy output; since the modulation frequency of the intense current relativistic electron beam IREB is identical to the external injection microwave frequency, the frequency of the output high-power microwave HPM is also identical to the external injection microwave frequency.
The related parameters of the structure of the X-band broadband high-power microwave amplifier in the embodiment are as follows: r1=35.0 mm, r2=45.0 mm, r3=52.2 mm, r4=29.5 mm, r5=29.5 mm, r6=30.0 mm, r7=51.0 mm, r8=30.5 mm, r9=25.0 mm, r10=55.0 mm, r11=32.0 mm, r12=48.2 mm, l2=52.0 mm, l3=38.1 mm, l5=7.0 mm, l6=3.0 mm, l7=7.0 mm, l8=6.5 mm, l9=3.0 mm, l10=6.5 mm, l11=12.0 mm, l12=5.0 mm, l13.5 mm, l14=13.5 mm7.0mm, h1=2.2 mm, h2=1.8 mm, h3=4.4 mm, l=2.0 mm, and L1 and L4 can be optimized according to the requirement. As shown in fig. 5, the typical output power and frequency diagram of the broadband high-power microwave amplifier with the X-band in this embodiment show that under the conditions of 400kV of electron beam voltage, 5A of current, 8.4GHz of injected microwave power, 50kW of injected microwave power, the device outputs about 467MW of microwave power, and 8.4GHz of output frequency. As shown in fig. 6, the output power diagram of the wideband high-power microwave amplifier with X-band in this embodiment is shown in fig. 7, where it is known that the center frequency point of the device is about 8.4GHz, the output power of the device is reduced to a frequency bandwidth below half the peak power of the device to be greater than 400MHz (8.2 GHz-8.6 GHz), that is, the 3dB bandwidth of the wideband high-power microwave amplifier with X-band in this embodiment is about 5%; as shown in FIG. 7, the phase of the output microwave of the broadband high-power microwave amplifier with the X-band of the embodiment changes with time under different injection microwave frequencies, and the phase of the output microwave of the device shakes within the range of 8.2 GHz-8.6 GHz<20 °; as can be seen from fig. 5 and fig. 7, the wideband high-power microwave amplifier with the X-band of the present embodiment can realize the HPM output of frequency and phase locking, and meet the requirement of HPM coherent power synthesis; according to the HPM coherent power synthesis principle, N HPM sources with N frequency and phase locking can realize N 2 The equivalent radiation power of the HPM output, i.e. the X-band broadband high-power microwave amplifier of the embodiment, can be further improved.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above examples, and all technical solutions belonging to the concept of the present invention belong to the protection scope of the present invention. It should be noted that modifications and adaptations to the present invention may occur to one skilled in the art without departing from the principles of the present invention and are intended to be within the scope of the present invention.
Claims (10)
1. An X-band broadband high-power microwave amplifier, comprising:
an electron beam emitting structure for generating a high current relativistic electron beam IREB;
the electron beam modulation structure is used for modulating and bunching the strong current relativity electron beams IREB and realizing the modulation depth of fundamental current not lower than 10%;
the traveling wave extraction structure is used for realizing further clustering of the strong current relativistic electron beams IREB and converting the kinetic energy of the strong current relativistic electron beams IREB after the sufficient clustering into microwave energy for coupling output;
the output end of the electron beam emission structure is connected with the input end of the electron beam modulation structure, and the output end of the electron beam modulation structure is connected with the input end of the traveling wave extraction structure.
2. The X-band broadband high-power microwave amplifier according to claim 1, wherein the electron beam emitting structure, the electron beam modulating structure, and the traveling wave extracting structure are all rotationally symmetrical structures about a central axis OZ.
3. The X-band broadband high-power microwave amplifier according to claim 1, wherein the electron beam emission structure comprises a cathode seat (1), a cathode (2), an anode inner cylinder (3) and an anode outer cylinder (4), the cathode (2) is arranged on the cathode seat (1), the anode outer cylinder (4) is sleeved outside the anode inner cylinder (3) and is concentrically arranged with the anode inner cylinder (3), a section of drift tube with a cavity structure with an inner radius of R1 and an outer radius of R2 is formed between the anode inner cylinder (3) and the anode outer cylinder (4), the cathode (2) is opposite to the inlet side of the drift tube, and the electron beam modulation structure and the traveling wave extraction structure are sequentially arranged on the drift tube between the anode inner cylinder (3) and the anode outer cylinder (4).
4. An X-band broadband high-power microwave amplifier according to claim 3, characterized in that the electron beam modulation structure comprises a expanding interaction injection cavity (5) and an expanding interaction modulation cavity (6) which are arranged along the length direction of the drift tube in a gap manner, wherein the expanding interaction injection cavity (5) is used for high-efficiency absorption of externally injected microwave power and primary modulation of a strong-current relativity electron beam IREB; the expansion interaction modulation cavity (6) is used for further increasing the fundamental current modulation depth of the strong current relativity electron beam IREB, and the modulation frequency of the strong current relativity electron beam IREB by the expansion interaction injection cavity (5) and the expansion interaction modulation cavity (6) is consistent with the external injection microwave frequency.
5. The X-band broadband high-power microwave amplifier according to claim 4, wherein the extended interaction injection cavity (5) is formed by two annular grooves respectively arranged on the anode inner cylinder (3) and the anode outer cylinder (4), and a gap between the anode inner cylinder (3) and the anode outer cylinder (4), and the two annular grooves are in signal communication through a coupling hole or a coupling ring to form an extended interaction structure, and the anode outer cylinder (4) is provided with a microwave injection ring communicated with the annular grooves.
6. The X-band broadband high-power microwave amplifier according to claim 5, wherein the extended interaction modulation cavity (6) is formed by two annular grooves respectively arranged on the anode inner cylinder (3) and the anode outer cylinder (4), and a gap between the anode inner cylinder (3) and the anode outer cylinder (4), and the two annular grooves are in signal communication through a coupling hole or a coupling ring to form an extended interaction structure.
7. The X-band broadband high-power microwave amplifier according to claim 6, wherein signal communication is performed between the two annular grooves through a coupling ring to form an extended interaction structure, and a metal disc for separating the two annular grooves inside the coupling ring is connected with the anode outer cylinder (4) by a support rod or a reflux rod.
8. The X-band broadband high-power microwave amplifier according to claim 7, wherein the traveling wave extraction structure comprises a reflector (8), a slow wave structure (9) and an output waveguide (10) which are sequentially and adjacently arranged, the reflector (8) is formed by two annular grooves respectively arranged on the anode inner cylinder (3) and the anode outer cylinder (4), and a gap between the anode inner cylinder (3) and the anode outer cylinder (4), and the reflector (8) is used for isolating the electron beam modulation structure and the traveling wave extraction structure so as to ensure that the electron beam modulation structure and the traveling wave extraction structure work independently and stably.
9. The X-band broadband high-power microwave amplifier according to claim 8, wherein the slow wave structure (9) is a periodic wave structure provided on at least one of the anode inner cylinder (3) and the anode outer cylinder (4), and the wave shape in the periodic wave structure is a rectangular, trapezoidal or sinusoidal structure.
10. The X-band broadband high-power microwave amplifier according to claim 9, characterized in that the output waveguide (10) is a section of annular cavity provided between the inner anode cylinder (3) and the outer anode cylinder (4).
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