CN115148565A - Three-axis relativistic klystron amplifier adopting slow wave extraction device - Google Patents
Three-axis relativistic klystron amplifier adopting slow wave extraction device Download PDFInfo
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- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
- H01J25/02—Tubes with electron stream modulated in velocity or density in a modulator zone and thereafter giving up energy in an inducing zone, the zones being associated with one or more resonators
- H01J25/10—Klystrons, i.e. tubes having two or more resonators, without reflection of the electron stream, and in which the stream is modulated mainly by velocity in the zone of the input resonator
- H01J25/14—Klystrons, i.e. tubes having two or more resonators, without reflection of the electron stream, and in which the stream is modulated mainly by velocity in the zone of the input resonator with tube-like electron stream coaxial with the axis of the resonators
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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Abstract
The invention discloses a triaxial relativistic klystron amplifier adopting a slow wave extraction device, which comprises: an electron beam emitting structure for generation of a high current relativistic electron beam (IREB); the electron beam modulation structure is used for modulating and clustering IREB (infrared-responsive element beam), and the modulation depth of the fundamental current is not less than 110%; the slow wave extraction device is used for converting the kinetic energy of the IREB after full clustering into microwave energy and coupling and outputting the microwave energy; the invention combines the electron beam modulation structure and the slow wave extraction device, on one hand, the problem that the frequency and the phase of output microwaves are difficult to lock caused by free competition of eigen modes of the slow wave structure can be solved, on the other hand, the power capacity of the triaxial relativistic klystron amplifier can be effectively improved, and an optional high-frequency-band high-power microwave (HPM) source device is provided for a high-frequency-band high-power microwave coherent synthesis system.
Description
Technical Field
The invention relates to a high-power microwave source device in the technical field of high-power microwaves, in particular to a triaxial relativistic klystron amplifier adopting a slow wave extraction device.
Background
High Power microwaves (High Power Microwave, HPM) generally refers to electromagnetic waves with peak Power greater than 100MW and frequencies between 1 and 300 GHz. The high-power microwave source is a core component of a high-power microwave system, converts the kinetic energy of a high-current relativistic electron beam into microwave energy through a high-frequency electromagnetic structure specially designed in a device, and then generates directional high-power microwave radiation through a transmitting antenna. The pursuit of higher power, higher frequency, higher efficiency microwave output is an important development goal in the field of HPM technology. After more than fifty years of research development, several typical HPM devices can achieve GW-level HPM output. However, due to the limitations of physical mechanisms such as radio frequency breakdown and space charge effect, and factors such as materials and processing techniques, the output power of a single HPM generation device is difficult to further increase. Coherent combining technique by coherent combining microwaves generated by multiple HPM sources, N can be obtained in the far field 2 The peak power density (N is the number of high power microwave sources) is multiple, and equivalent HPM radiation in the order of hundreds of GW is expected. In order to achieve higher synthesis efficiency, coherent synthesis technology puts high requirements on the frequency, phase and other characteristics of the microwave output by the HPM source, and a general relativistic oscillator is difficult to meet.
The tri-axial Klystron Amplifier (TKA) is an HPM source based on the electron beam distribution modulation theory, and realizes modulation, clustering and beam-wave energy conversion of electron beams by using mutually independent beam-wave interaction resonant cavity structures, can realize frequency-stable phase-controllable HPM output, and is one of preferable devices for realizing high-frequency band HPM coherent synthesis. Currently, TKA has implemented GW-level frequency-locked phase-locked HPM output in the X-band and Ku-band. However, when TKA is extended to Ka and so on, the power capacity of the device is reduced due to the size sharing effect (the size of the HPM source is gradually reduced with the increase of the operating frequency), and it is difficult to realize the output of the HPM microwave in GW level. The output cavity radio frequency breakdown is one of the core problems limiting the Ka-band TKA to achieve higher power microwave output.
Conventional TKA's commonly employ single or multiple gap standing wave output cavities. For example, prior art 1: ZHANG W, JU J, ZHANG J, et al.A high-gain and high-efficiency X-band tertiary klystron amplitude with two-stage cassette blocked compartments [ J]Physics of plasma, 2017,24 (12), 123118 discloses an X-band TKA, which has a structure as shown in FIG. 1, and is composed of a cathode base 101, an anode outer cylinder 102, a cathode 103, an inner conductor 104, an injection cavity 105, a first modulation cavity 106, a second modulation cavity 107, an extraction cavity 108, a first reflection cavity 109, a second reflection cavity 110, a third reflection cavity 111, an electron beam collector 112, an output port adjusting block 113 and an output waveguide 114. Specifically, the cathode holder 101, the anode outer cylinder 102 and the cathode 103 constitute an electron beam emitting structure of the device; the implantation chamber 105, the first modulation chamber 106 and the second modulation chamber 107 constitute an electron beam modulation structure of the device; the extraction chamber 108, the electron beam collector 112, the output port adjusting block 113 and the output waveguide 114 constitute an output chamber of the device. The electron beam emitting structure is used for generating a high-current relativistic electron beam, the electron beam modulating structure is used for fully modulating and clustering the high-current relativistic electron beam, and the output cavity is used for converting and extracting beam-wave energy. The working mode of the output cavity in prior art 1 is TM 012 The working principle of the die is as follows: drifting of the substantially clustered electron beam through the output cavity gap excites a mode of operation in the output cavity, the electromagnetic field of which decelerates the electron beam, converts the kinetic energy of the electron into electromagnetic energy, and couples it out through the slot between the extraction cavity 108 and the microwave output waveguide 114. When the TKA is extended to the Ka band,the extraction cavity 108 is drastically reduced in size due to the size-sharing effect, and a standing wave extraction cavity with more gaps must be employed. For example, ka-band TKA proposed by the university of electronic technology employs a three-gap standing wave extraction chamber, see prior art 2: LI S, DUAN Z, HUANG H, et al]Physics of Plasmas,2018,25 (4): 983. However, even though a multi-gap standing wave extraction cavity is introduced, the Ka-band TKA of the prior art 2 still faces a serious radio frequency breakdown risk, and the maximum electric field of the surface of the output cavity of the device is 2.33MV/cm under the condition of 1.17GW output power, and the maximum surface field intensity is 2.15MV/cm under the condition of 1GW corresponding to the device.
The Slow Wave Structure (SWS) has the characteristics of high power capacity, high beam-Wave energy conversion efficiency, and the like, and is widely used in various Cerenkov oscillators, for example, prior art 3: BAI Z, ZHANG J, ZHONG H.A. dual-mode operation overregulated coaxial millimetre-wave generator with high power capacity and pull transverse electric and magnetic mode output [ J ]. Physics of plasma, 2016,23 (4). 225104 discloses a Ka-band Cerenkov oscillator whose output cavity structure is an eight-cycle SWS, whose output cavity surface maximum electric field is 1.42MV/cm under the condition of output power 611MW and maximum surface field strength is 1.82MV/cm under the condition of corresponding 1 GW. Compared to the multiple gap standing wave extraction cavity in prior art 2, the power capacity of the SWS extraction structure in prior art 3 is significantly higher. However, since the Cerenkov oscillator usually uses the SWS cascaded in one or two stages, in order to implement self-oscillation of the SWS working mode and implement high-power microwave output, the Cerenkov oscillator has a low Q value of the SWS working mode, and the free competition process between different eigenmodes at the initial oscillation starting stage is complicated. Specifically, when a Cerenkov oscillator is used for an experiment, the output microwave frequency between different cannons has jitter of tens of MHz magnitude, and the color of the output microwave frequency \21336ispoor. Therefore, it is difficult for the Cerenkov oscillator to realize an HPM output with stable frequency. Furthermore, the phase of the microwave output by the Cerenkov oscillator is more difficult to control, and coherent combination is difficult to realize.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: aiming at the problems in the prior art, the invention combines an electron beam modulation structure and a slow wave extraction device, and provides a triaxial relativistic klystron amplifier adopting the slow wave extraction device, so that the problem that the frequency and the phase of output microwaves are difficult to lock due to free competition of eigenmodes of the slow wave structure can be solved, the power capacity of the triaxial relativistic klystron amplifier can be effectively improved, and a selectable high-power microwave source device is provided for a high-frequency band high-power microwave coherent synthesis system.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
a three-axis relativistic klystron amplifier employing a slow wave extraction device, comprising:
an electron beam emitting structure for generating a high current relativistic electron beam;
the electron beam modulation structure is used for modulating and clustering strong current relativistic electron beams and realizing the modulation depth of the fundamental current of not less than 110 percent;
the slow wave extraction device is used for converting the kinetic energy of the electron beams after sufficient clustering into microwave energy and coupling and outputting the microwave energy;
the output end of the electron beam emission structure is connected with the input end of the electron beam modulation structure, and the output end of the electron beam modulation structure is connected with the input end of the slow wave extraction device, so that the electron beam modulation structure and the slow wave extraction device (207) are combined to overcome the problem that the frequency and the phase of output microwaves are difficult to lock due to free competition of eigenmodes of the slow wave structure, and the power capacity of the triaxial relativistic klystron amplifier is improved.
Optionally, slow wave extraction element includes that inner conductor and cover establish the outer conductor in the inner conductor outside, form ring shape cavity between inner conductor and the outer conductor, ring shape cavity comprises drift connecting channel, reflection chamber and the output waveguide who communicates in proper order, output waveguide's inner wall is smooth in order to form smooth waveguide structure, be equipped with the slow wave structure on output waveguide's the outer wall, slow wave extraction element is about inner conductor central axis rotational symmetry.
Optionally, the reflective cavity is formed by a circular groove formed in an outer wall of the inner conductor, a circular groove formed in an inner wall of the outer conductor, and a circular cavity portion located between the two circular grooves.
Optionally, the slow-wave structure is a periodic ripple structure disposed on an inner wall of the outer conductor, and a single periodic portion of the periodic ripple structure is one or a combination of two or more of a rectangle shape, a trapezoid shape, a cosine curve shape, and an irregular shape.
Optionally, the inner conductor is cylindrical and the outer conductor is tubular.
Optionally, a radius difference R2-R1 between the inner radius R1 and the outer radius R2 of the drift connection channel is smaller than a half wavelength of a microwave signal externally injected into the electron beam modulation structure.
Optionally, the inner radius of the reflective cavity is R3 and the outer radius of the reflective cavity is R4, and R3< R1, R4> R2 is satisfied, where R1 is the inner radius of the drift connection channel and R2 is the outer radius of the drift connection channel.
Optionally, the inner radius R5 and the outer radius R6 of the output waveguide satisfy R3< R5, R4> R6, where R3 is the inner radius of the reflective cavity and R4 is the outer radius of the reflective cavity.
Optionally, the electron beam emitting structure comprises: the cathode seat and the anode outer cylinder are sleeved on the outer side of the cathode seat and are coaxially arranged, a cathode for generating an Intense current Relativistic Electron Beam (IREB for short) is arranged at the edge of the cathode seat, and the cathode faces towards the input end of the Electron Beam modulation structure so as to send the generated Intense current Relativistic Electron Beam into the input end of the Electron Beam modulation structure.
Optionally, the electron beam modulating structure comprises: the injection cavity is used for realizing the absorption of an externally injected microwave signal and the primary modulation of an electron beam; a modulation reflection cavity for further modulating the electron beam to generate an electron beam having a fundamental current modulation depth of not less than 110%; and the input ends of the injection cavity, the modulation reflection cavity and the slow wave extraction device are sequentially connected.
Optionally, the modulation reflection cavity includes a first modulation reflection cavity and a second modulation reflection cavity which are sequentially communicated, an output end of the injection cavity is connected with an input end of the first modulation reflection cavity, and an output end of the second modulation reflection cavity is connected with an input end of the slow wave extraction device.
Compared with the prior art, the invention mainly has the following advantages:
1. the invention introduces the external wave slow-wave structure into the triaxial relativistic klystron amplifier, on one hand, the power capacity of the triaxial relativistic klystron amplifier is increased, on the other hand, the error tolerance of the triaxial relativistic klystron amplifier on the eccentricity and dislocation between the inner conductor and the outer conductor is improved, and the triaxial relativistic klystron amplifier is beneficial to realizing high-power microwave output experimentally.
2. According to the invention, a deep cluster electron beam excitation slow wave structure is obtained by pre-modulating an electron beam modulation structure of a triaxial relativistic klystron amplifier, the working frequency of the slow wave structure is approximate to the pre-modulated frequency of the electron beam and is directly increased and amplified, and free competition does not exist among eigenmodes of the slow wave structure; therefore, the invention adopts the triaxial relativistic klystron amplifier of the slow wave extraction device to realize the HPM output with stable frequency and phase under the condition of ensuring that the slow wave structure realizes high-efficiency beam-wave energy conversion, and solves the problem that the frequency and the phase of the microwave output by the slow wave structure in the Cerenkov oscillator are difficult to control.
Drawings
Fig. 1 is a schematic structural diagram of an X-band TKA in prior art 1.
Fig. 2 is a schematic structural diagram of a three-axis relativistic klystron amplifier (TKA) in an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a slow wave extraction device in an embodiment of the invention.
FIG. 4 is a microwave power curve and a microwave spectrum of the output microwave of the slow wave extracting device according to the embodiment of the present invention.
FIG. 5 is a phase-time variation curve of the output microwave of the slow wave extraction device in the embodiment of the present invention.
FIG. 6 is a fundamental current distribution curve of the slow-wave extraction device according to the embodiment of the present invention.
Description of the background art section: 101. a cathode base; 102. an anode outer cylinder; 103. a cathode; 104. an inner conductor; 105. an implantation chamber 105; 106. first of all a modulation chamber; 107. a second modulation cavity; 108. an extraction chamber; 109. a first reflective cavity; 110. a second reflective cavity; 111. a third reflective cavity; 112. an electron beam collector; 113. an output port adjusting block; 114. an output waveguide;
illustration in the examples of the invention: 201. a cathode base; 202. an anode outer cylinder; 203. a cathode; 204. an injection chamber; 205. a first modulating reflective cavity; 206. a second modulating reflective cavity; 207. a slow wave extraction device; 301. an inner conductor; 302. an outer conductor; 303. a drift connection channel; 304. a reflective cavity; 305. an output waveguide; 306. a slow wave structure.
Detailed Description
As shown in fig. 2, the three-axis relativistic klystron amplifier adopting the slow wave extraction device of the present embodiment includes:
an Electron Beam emission structure for generating a high current Relativistic Electron Beam (IREB);
the electron beam modulation structure is used for modulating and clustering IREB (infrared-responsive element beam), and the modulation depth of the fundamental current is not less than 110%;
a slow wave extraction device 207, configured to convert the kinetic energy of the fully clustered IREB into microwave energy and couple the microwave energy out;
the output end of the electron beam emission structure is connected with the input end of the electron beam modulation structure, and the output end of the electron beam modulation structure is connected with the input end of the slow wave extraction device 207, so that the electron beam modulation structure and the slow wave extraction device (207) are combined to overcome the problem that the frequency and the phase of output microwaves are difficult to lock due to free competition of eigenmodes of the slow wave structure, and the power capacity of the triaxial relativistic klystron amplifier is improved.
The slow wave extraction device 207 is used for converting the electron beam kinetic energy subjected to depth modulation into microwave energy and coupling out the microwave energy, and the output side of the slow wave extraction device is a radiation antenna (not belonging to a three-axis relativistic klystron amplifier, which is omitted in the figure). As shown in fig. 3, the slow wave extraction device 207 in this embodiment includes an inner conductor 301 and an outer conductor 302 sleeved outside the inner conductor 301, an annular cavity is formed between the inner conductor 301 and the outer conductor 302, the annular cavity is composed of a drift connection channel 303, a reflection cavity 304 and an output waveguide 305, which are sequentially communicated, an inner wall of the output waveguide 305 is smooth to form a smooth waveguide structure, a slow wave structure 306 is disposed on an outer wall of the output waveguide 305, and the slow wave extraction device 207 is rotationally symmetric with respect to a central axis (i.e., an oz axis in fig. 3) of the inner conductor 301.
In this embodiment, the inner conductor 301 is cylindrical and the outer conductor 302 is tubular. The inner conductor 301 and the outer conductor 302 may be selected as desired from a desired conductor material, such as stainless steel, oxygen free copper, etc.
The purpose of the drift connecting channel 303 is to connect the electron beam modulating structure and the annular cavity part of the slow wave extraction device 204. As shown in fig. 3, the drift connecting channel 303 has an inner radius R1, an outer radius R2 and an axial length L1. In order to realize the electromagnetic isolation between the beam-wave interaction resonant cavities of the triaxial relativistic klystron amplifier (TKA), the radius difference R2-R1 between the inner radius R1 and the outer radius R2 of the drift connecting channel 303 in the embodiment is smaller than the half wavelength of the microwave signal externally injected into the electron beam modulation structure.
The reflective cavity 304 is used to connect the drift connecting channel 303 and the output waveguide 305, and meanwhile, the reflective cavity 304 also plays a role in isolating the electron beam modulating structure and the slow wave extracting device 204, so as to realize the electromagnetic isolation of the three-axis relativistic klystron amplifier (TKA) beam-wave interaction resonant cavity. The reflective cavity 304 is a circular cavity formed on the inner conductor 301 and the outer conductor 302. As shown in fig. 3, the reflective cavity 304 in this embodiment is composed of a circular groove formed on the outer wall of the inner conductor 301, a circular groove formed on the inner wall of the outer conductor 302, and a circular cavity portion located between the two circular grooves. As shown in FIG. 3, the reflective cavity 304 has an inner radius R3, an outer radius R4, and an axial length L2. In this embodiment, the reflective cavity 304 is asymmetric in the z-direction for smooth transition of the dimension between the drift connecting channel 303 and the output waveguide 305, and the inner radius R3 and the outer radius R4 of the reflective cavity 304 satisfy R3< R1, R4> R2, where R1 is the inner radius of the drift connecting channel 303 and R2 is the outer radius of the drift connecting channel 303.
As shown in fig. 3, the output waveguide 305 has an inner radius R5, an outer radius R6, and an axial length L3. In this embodiment, the inner radius R5 and the outer radius R6 of the output waveguide 305 satisfy R3< R5, R4> R6, where R3 is the inner radius of the reflective cavity 304 and R4 is the outer radius of the reflective cavity 304.
The outer wall of the output waveguide 305 is provided with a slow wave structure 306, and the inner wall of the output waveguide is a smooth waveguide structure to form a single-side outer corrugated structure. The reason why the inner wall adopts the smooth waveguide and the corrugated structure is not provided is as follows: the inner and outer dual-ripple slow wave structure is sensitive to the size, and eccentricity and dislocation of inner and outer ripples in an experiment can cause electromagnetic parameters of the slow wave structure to deviate from a preset value seriously, so that the efficiency of a three-axis relativistic klystron amplifier (TKA) is reduced; in the embodiment, the slow wave structure 306 is arranged on the outer wall of the output waveguide 305, and the smooth waveguide structure is selected for the inner wall to form a single-side outer corrugated structure, so that the problem of inner and outer corrugated dislocation is avoided, and the eccentricity tolerance of the inner and outer conductors is high; meanwhile, in order to effectively improve the power capacity of the three-axis relativistic klystron amplifier (TKA), the difference between the inner and outer radii of the output waveguide 305 is not limited to a half wavelength, and an over-mode structure may be adopted.
In this embodiment, the slow-wave structure 306 is a periodic corrugated structure disposed on the inner wall of the outer conductor 302, and a single periodic portion of the periodic corrugated structure is one or a combination of more than two of a rectangle, a trapezoid, a cosine curve, and an irregular shape. In the embodiment, a specific single periodic part is rectangular to form a periodic rectangular structure; in this embodiment, the slow wave extraction device 207 has an inner radius of R7, an outer radius of R6, a period length of L5, and a ripple length of L6, and satisfies L5> L6; the cycle number of the slow wave extraction device 207 can be obtained by optimization according to the actual design requirement; the axial length between the reflective cavity 304 and the slow wave structure 306 is L4. The number of periods (the number of repetitions of a single period part) of the periodic corrugated structure can be selected as required, for example, a five-period rectangular corrugated structure in this embodiment, and is used to convert the kinetic energy of the deeply modulated high-current relativistic electron beam into electromagnetic energy and realize the coupling output of the high-power microwave HPM.
As shown in fig. 2, the electron beam emitting structure in the present embodiment includes: the cathode base 201 and the anode outer cylinder 202, the anode outer cylinder 202 is sleeved outside the cathode base 201 and the anode outer cylinder 202 are coaxially arranged, the edge of the cathode base 201 is provided with a cathode 203 for generating an Intense current Relativistic Electron Beam (IREB for short), and the cathode 203 faces the input end of the Electron Beam modulation structure so as to send the generated Intense current Relativistic Electron Beam into the input end of the Electron Beam modulation structure.
As shown in fig. 2, the electron beam modulating structure in the present embodiment includes: the injection cavity 204 is used for realizing the absorption of an externally injected microwave signal and the primary modulation of an electron beam; a modulation reflection cavity for further modulating the electron beam to generate an electron beam having a fundamental current modulation depth of not less than 110%; the injection cavity 204, the modulation reflection cavity and the input end of the slow wave extraction device are connected in sequence.
The injection cavity 204 is used for absorbing externally injected microwave signals and primarily modulating electron beams, and can adopt a re-entrant structure or an overmoded rectangular structure according to the working frequency band of the device, a re-entrant structure is adopted in general Ku and below frequency bands, and an overmoded rectangular structure is adopted in a frequency band above Ku; the specific reasons are that the size of a high-frequency device is small, the adjustable range of a reentrant structure is greatly limited, and the injected microwave power absorption with high efficiency is difficult to realize.
And the modulation reflection cavity is used for further modulating the electron beams to generate the electron beams with the modulation depth of the fundamental wave current not less than 110% so as to excite the working mode of the slow wave extraction device, skipping the free competition stage and finally realizing the HPM output of frequency locking and phase locking, so that the problem that the frequency and the phase of output microwaves are difficult to lock due to free competition of eigenmodes of a slow wave structure can be solved. In this embodiment, the TKA modulating reflective cavity and its neighboring reflective cavities are collectively referred to as a modulating reflective cavity, and are not separately described.
The number of the substructures of the modulation reflection cavity can be selected according to requirements, and the substructures can be single-gap or multi-gap cavity structures. For example, in an alternative implementation manner, as shown in fig. 2, the modulation reflection cavity in this embodiment includes a first modulation reflection cavity 205 and a second modulation reflection cavity 206 that are sequentially connected, an output end of the injection cavity 204 is connected to an input end of the first modulation reflection cavity 205, and an output end of the second modulation reflection cavity 206 is connected to an input end of the slow wave extraction device 204, so that a modulation reflection cavity of a secondary substructure is implemented. The first modulating reflective cavity 205 and the second modulating reflective cavity 206 may be of single-gap or multi-gap cavity structure as required. Both the implantation cavity 204 and the modulating reflective cavity are collectively referred to as an electron beam modulating structure in this embodiment. Since the design method of the TKA electron beam modulation structure is mature, besides the above structural example of the present embodiment, a designer in the art can also achieve the modulation depth of the fundamental current of not less than 110% through various structural combinations, and we will not describe here in detail. The embodiment introduces the slow wave extraction device into a three-axis relativistic klystron amplifier (TKA) to realize the improvement of the TKA power capacity and the locking of the frequency and the phase of the microwave output by the slow wave extraction device.
The working principle of the three-axis relativistic klystron amplifier adopting the slow wave extraction device in the embodiment is as follows: when an external injection microwave signal is fed into the injection cavity 204, a coaxial TM mode is excited at a gap of the injection cavity 204, and an axial electric field of the coaxial TM mode primarily modulates the velocity of a passing electron beam; the velocity modulation of the electron beam is deepened by the first modulating reflective cavity 205 and the second modulating reflective cavity 206, and the modulation depth of the electron beam is larger than 110%; when the fully pre-modulated electron beams pass through the slow wave extraction device 207, an alternating electric field with corresponding frequency is excited in the cavity, the electric field decelerates the electron beams, and the kinetic energy of the electron beams is converted into electromagnetic energy and coupled out; the reflective cavity 204 is used for reflecting electromagnetic energy in the slow wave extraction device 207, inhibiting the electromagnetic energy in the slow wave extraction device 207 from being coupled into the TKA electron beam modulation structure, and ensuring that the TKA electron beam modulation structure works independently and stably, thereby ensuring that an electron beam entering the slow wave extraction device 207 has stable premodulation frequency and premodulation depth; the electron beam with stable pre-modulation state will stably excite the working mode of the slow wave extraction device 207, and there is no free competition between the eigenmodes of the slow wave extraction device 207, so the three-axis relativistic klystron amplifier adopting the slow wave extraction device in this embodiment can realize frequency-locked and phase-locked high-power microwave HPM output. It should be noted that the slow wave extraction device 207 is only used for extracting the energy of the electron beam, and the electron beam is not further modulated after entering the slow wave extraction device 207.
In this embodiment, the three-axis relativistic klystron amplifier using the slow wave extraction device has the following structural relevant parameters: the central frequency of the microwave signal of the externally injected electron beam modulation structure is 29.0GHz, corresponding to a microwave wavelength λ =10.3mm, and the structure dimensions in fig. 3 are: r1=37.8mm, R2=42.2mm, R3=35.8mm, R4=45.0mm, R5=37.0mm, R6=43.2mm, R7=41.6mm, L2=2.4mm, L4=3mm, L5=3.2mm, L6=1.6mm, and L1 and L3 can be optimized according to requirements.
Fig. 4 is a power curve and a microwave spectrum of output microwaves of the slow-wave extracting device in the three-axis relativistic klystron amplifier according to the present embodiment. Referring to fig. 4, under the conditions of 320kV of electron beam voltage, 4kA of current, 5kW of injected microwave power, and 0.7T of guided magnetic field strength, the present embodiment adopts the triaxial relativistic klystron amplifier of the slow-wave extraction device to obtain 530MW of HPM output, corresponding to 50dB and 41.4% of gain and efficiency, respectively, and the saturation time of the output microwave power is about 30ns; in this embodiment, the frequency of the microwave output by the triaxial relativistic klystron amplifier using the slow wave extraction device is stabilized at 29.0GHz, which proves that the triaxial relativistic klystron amplifier using the slow wave extraction device in this embodiment can realize the high-power microwave HPM output with stable frequency.
Fig. 5 is a phase-time variation curve of the output microwave of the slow wave extraction device in this embodiment. Referring to fig. 5, after the output microwave power is saturated (after 30 ns), the phase of the microwave output by the triaxial relativistic klystron amplifier using the slow-wave extraction device is stable in this embodiment, which proves that the slow-wave extraction device using the triaxial relativistic klystron amplifier using the slow-wave extraction device in this embodiment can realize high-power microwave HPM output with stable phase.
As can be seen from fig. 4 and fig. 5, the triaxial relativistic klystron amplifier adopting the slow-wave extraction device of the present embodiment can realize high-power microwave HPM output with stable frequency and phase; it is demonstrated that the three-axis relativistic klystron amplifier adopting the slow-wave extraction device in the embodiment can realize the output of the HPM with stable frequency and phase under the condition of ensuring the slow-wave structure to realize high-efficiency beam-wave energy conversion by adopting the deep clustered electron beam excitation slow-wave structure obtained by pre-modulating the electron beam modulation structure of the three-axis relativistic klystron amplifier, and solve the problem that the phase of the microwave output by the slow-wave structure in the HPM oscillator is difficult to control.
Fig. 6 is a fundamental current distribution curve of the three-axis relativistic klystron amplifier using the slow wave extraction device according to the present embodiment. As can be seen from fig. 6, in this embodiment, the peak value of the fundamental modulation current of the triaxial relativistic klystron amplifier using the slow wave extraction device is 4.6kA, and the corresponding modulation depth of the fundamental current is 115%; in the embodiment, the fundamental wave modulation current of the triaxial relativistic klystron amplifier adopting the slow wave extraction device starts to fall when entering the first period of the slow wave extraction device 207 and slightly rises when leaving the last period of the slow wave structure 306, so that the slow wave extraction device 207 realizes higher beam-wave energy conversion efficiency; it should be noted that the slow wave extraction device 207 is only used for extracting the energy of the electron beam, the electron beam is not further modulated after entering the slow wave extraction device 207, and the fundamental wave modulation current does not further rise after entering the slow wave structure 306.
In summary, aiming at the problems of low power capacity of the standing wave extraction cavity of the triaxial relativistic klystron amplifier (TKA device) and difficult locking of the output microwave frequency and phase of the slow wave extraction device in the Cerenkov oscillator, the invention introduces the slow wave extraction device into the triaxial relativistic klystron amplifier to realize a triaxial relativistic klystron amplifier adopting the slow wave extraction device in the embodiment, so as to improve the power capacity of the triaxial relativistic klystron amplifier, adopt the electron beam excitation slow wave extraction device which is modulated by the electron beam modulation structure and is fully clustered, adopt the working mode of the electron beam excitation slow wave extraction device with fixed premodulation frequency (the electron beam with the fundamental current modulation depth not less than 110%), skip the free competition stage, and finally realize the frequency locking and phase locking of the slow HPM output, thereby overcoming the problems of difficult locking of the output microwave frequency and phase caused by free competition of the eigenmode of the high power structure, and providing a selectable microwave source device for coherent synthesis of the microwave HPM in the high-power band.
The above description is only a preferred embodiment of the present invention, and the scope of the present invention is not limited to the above embodiments, and all technical solutions that belong to the idea of the present invention belong to the scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may occur to those skilled in the art without departing from the principle of the invention, and are considered to be within the scope of the invention.
Claims (10)
1. A three-axis relativistic klystron amplifier using a slow wave extraction device, comprising:
an electron beam emitting structure for generating a high current relativistic electron beam;
the electron beam modulation structure is used for modulating and clustering strong current relativistic electron beams and realizing the modulation depth of the fundamental current of not less than 110 percent;
the slow wave extraction device (207) is used for converting the kinetic energy of the electron beams after being sufficiently clustered into microwave energy and coupling the microwave energy out;
the output end of the electron beam emission structure is connected with the input end of the electron beam modulation structure, and the output end of the electron beam modulation structure is connected with the input end of the slow wave extraction device (207), so that the electron beam modulation structure and the slow wave extraction device (207) are combined to overcome the problem that the frequency and the phase of output microwaves are difficult to lock due to free competition of eigenmodes of the slow wave structure, and the power capacity of the triaxial relativistic klystron amplifier is improved.
2. The triaxial relativistic klystron amplifier adopting the slow wave extraction device according to claim 1, wherein the slow wave extraction device (207) comprises an inner conductor (301) and an outer conductor (302) sleeved outside the inner conductor (301), a circular cavity is formed between the inner conductor (301) and the outer conductor (302), the circular cavity is composed of a drift connecting channel (303), a reflecting cavity (304) and an output waveguide (305) which are sequentially communicated, the inner wall of the output waveguide (305) is smooth to form a smooth waveguide structure, a slow wave structure (306) is arranged on the outer wall of the output waveguide (305), and the slow wave extraction device (207) is rotationally symmetrical about the central axis of the inner conductor (301).
3. The triaxial klystron amplifier using a slow wave extraction device as claimed in claim 2, wherein the reflection cavity (304) is formed by a circular ring groove formed on an outer wall of the inner conductor (301), a circular ring groove formed on an inner wall of the outer conductor (302), and a circular ring cavity portion located between the two circular ring grooves.
4. The triaxial relativistic klystron amplifier employing a slow wave extraction device according to claim 3, wherein the slow wave structure (306) is a periodic corrugated structure disposed on the inner wall of the outer conductor (302), and a single periodic portion of the periodic corrugated structure is one or a combination of two or more of a rectangle, a trapezoid, a cosine curve and an irregular shape.
5. The triaxial klystron amplifier using a slow wave extraction device according to claim 4, wherein the inner conductor (301) is cylindrical and the outer conductor (302) is a tubular structure.
6. The triaxial relativistic klystron amplifier using slow wave extraction device as claimed in claim 2, wherein the radius difference R2-R1 between the inner radius R1 and the outer radius R2 of the drift connect channel (303) is smaller than half wavelength of the microwave signal externally injected into the electron beam modulating structure.
7. The triaxial relativistic klystron amplifier using slow wave extraction means as set forth in claim 6, wherein an inner radius R3 and an outer radius R4 of said reflective cavity (304) satisfy R3< R1, R4> R2, where R1 is an inner radius of the drift link channel (303) and R2 is an outer radius of the drift link channel (303).
8. The three-axis relativistic klystron amplifier employing slow wave extraction means of claim 7, wherein an inner radius R5 and an outer radius R6 of said output waveguide (305) satisfy R3< R5, R4> R6, where R3 is the inner radius of the reflective cavity (304) and R4 is the outer radius of the reflective cavity (304).
9. The three-axis relativistic klystron amplifier employing a slow wave extraction device of claim 1, wherein the electron beam modulating structure comprises: an injection cavity (204) for realizing the absorption of an externally injected microwave signal and the primary modulation of an electron beam; a modulation reflection cavity for further modulating the electron beam to generate an electron beam having a fundamental current modulation depth of not less than 110%; and the input ends of the injection cavity (204), the modulation reflection cavity and the slow wave extraction device (207) are sequentially connected.
10. The triaxial klystron amplifier using slow wave extraction device according to claim 9, wherein the modulation reflection cavity comprises a first modulation reflection cavity (205) and a second modulation reflection cavity (206) sequentially connected, an output end of the injection cavity (204) is connected to an input end of the first modulation cavity (205), and an output end of the second modulation cavity (206) is connected to an input end of the slow wave extraction device (207).
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| CN116864358B (en) * | 2023-07-31 | 2023-12-05 | 中国人民解放军国防科技大学 | Ka-band phase-locked speed-adjusting coaxial Cerenkov device |
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