CN116864358A - Ka-band phase-locked speed-adjusting coaxial Cerenkov device - Google Patents
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- 230000005284 excitation Effects 0.000 claims 1
- 230000001629 suppression Effects 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 7
- 239000011358 absorbing material Substances 0.000 abstract description 4
- 230000003993 interaction Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 2
- 239000011797 cavity material Substances 0.000 description 81
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- 238000003786 synthesis reaction Methods 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 6
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- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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- 238000002474 experimental method Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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Abstract
The invention discloses a Ka-band phase-locked speed-adjusting coaxial Cerenkov device, which comprises: the pre-modulation area is used for pre-modulating and bunching the strong current relativistic electron beams to realize the depth of 30% of fundamental current pre-modulation; an energy extraction region for increasing the fundamental current modulation depth of the device and for achieving efficient beam-to-wave energy conversion; the invention adopts the reflecting cavity to isolate the beam interaction resonant cavity and inhibit mode competition, thereby overcoming the dependence of the hollow injection locking Cerenkov device on the wave absorbing material; the two groups of cascade modulation cavities are adopted to perform fundamental wave current pre-modulation, so that dependence of devices on injection microwave power is reduced, and the injection ratio of the devices is reduced; the energy extraction area with the electron beam modulation and energy extraction effects is adopted to shorten the device length, so that the narrow-channel long-distance electron beam transmission problem faced by the high-frequency band HPM amplifier is solved.
Description
Technical Field
The invention relates to the technical field of high-power microwaves, in particular to a Ka-band phase-locked speed-adjusting coaxial Cerenkov device.
Background
The Ka-band microwave has the frequency range of 26.5 GHz-40.0 GHz and the wavelength range of 7.5 mm-11.3 mm, and has the characteristics of wide frequency band, less interference, large data capacity and the like. Meanwhile, due to the fact that the Ka wave band is high in frequency and short in wavelength, the Ka wave band microwave device has the advantages of being small in size, high in antenna gain and the like. Therefore, ka-band microwaves are widely applied to the fields of high-speed satellite communication, high-definition television rebroadcasting, personal satellite communication and the like. The Ka-band high-power microwaves (HighPowerMicrowave, HPM) refer to Ka-band microwaves with peak power of more than 100 MW. Due to the physical mechanisms such as radio frequency breakdown, space charge effect and the like and the limitations of factors such as device materials, processing technology and the like, the output power of a single Ka-band HPM source is about 500MW, and higher-power microwave output is difficult to realize. Spatial coherent power synthesis technology, which can obtain N in far field by performing coherent power synthesis on microwaves generated by a plurality of HPM sources 2 A multiple of peak power density (N is the number of high power microwave sources) is expected to achieve equivalent HPM radiation on the order of hundreds of GWs. In order to achieve higher synthesis efficiency, spatial coherence synthesis puts high requirements on the characteristics of frequency, phase and the like of microwave output by an HPM source, and a general relativistic oscillator is difficult to meet.
The triaxial relativity klystron amplifier (TriaxialKlystronAmplifier, TKA) has the characteristics of stable output microwave frequency, controllable phase and the like, and is a preferable device for HPM spatial coherent synthesis. At present, TKA has realized GW-level frequency-locking and phase-locking HPM output in X-band and Ku-band. However, when the working frequency of TKA is extended to a higher frequency band, the device is difficult to realize high-power microwave output, for example, a Ka-band TKA proposed by a researcher has an analog output power of 1.17GW, only 776kW of microwave output is obtained in an experiment, and the experimental power is less than one thousandth of the analog power, see prior art 1: LIS, DUANZ, HUANGH, et al, extendedactionofacibenzoaxoxial, relativistion, upsilonfigure w igawatt-leveloutputkaband [ J ]. Physics soft plastics, 2018,25 (4): 983. The main problems faced by the Ka-band TKA are analyzed as follows:
(1) Narrow channel long distance electron beam transport problem: in order to realize the cut-off of the working mode, the width of the TKA drift tube needs to be controlled within 0.5λ (λ is the output microwave wavelength); meanwhile, the modulation and the clustering of the intense-current relativistic electron beams (Intergre-stationary ElectronBeam, IREB) in the TKA are separately carried out, and a longer drift section is needed to realize the deep clustering of IREBs. Thus, in the Ka band TKA, the IREB needs to be transmitted over a long distance in a narrow channel. IREB risks scraping the drift channel causing beam current loss even at a guiding magnetic field strength of 1.0T. Unstable insufficient transmission of IREB will result in reduced microwave power output by the device;
(2) Radio frequency breakdown problem: the high-frequency band TKA has small volume size and low power capacity, and under the high-power operation condition, the surface field intensity of the front cavity and the extraction cavity is extremely easy to exceed the breakdown threshold value of the cavity material, so that radio frequency breakdown occurs; the radio frequency breakdown can cause the formation of an anode plasma source, electrons and ions which are continuously emitted by the anode plasma source can diffuse along a magnetic induction line, collide with IREB and obstruct the transmission of the IREB, and finally cause the problems of reduced device efficiency, shortened pulse, mode jump and the like;
the Cherenkov device (Relativistic Cherenkov Generator, RCG) has the characteristics of high power capacity, low size sensitivity and the like, and is a preferable structure of a high-frequency band HPM source. However, the output microwave phase of the RCG has randomness, and the phase difference between different shots is very large, so that stable coherent synthesis is difficult to realize. To achieve coherent synthesis of RCG, researchers have proposed an injection locked hollow RCG that has experimentally obtained an HPM output of 9.3GHz, injection ratio-35.4 dB, see prior art 2: R.Xiao, Y.Deng, C.Chen, Y.Shi, and J.Sun, "Generation of powerful microwave pulses by channel power summation of two X-band phaselocked relativistic backward wave oscillators," Physics ofPlasmas,2018,25 (3): 033109, jan.,2018. However, this solution is difficult to expand to higher frequency bands for the following reasons:
(1) When the hollow RCG is expanded to a higher frequency band, a large overmode structure is required to be adopted to ensure the power capacity of the hollow RCG, and the mode components of the structure are complex, so that the mode control is difficult to realize;
(2) The scheme needs larger injection microwave power to realize the locking of the output microwave phase, and the injection ratio is larger;
(3) The scheme needs to adopt a wave-absorbing material to isolate the beam interaction resonant cavity so as to inhibit mode competition, and the wave-absorbing material faces the problems of radio frequency breakdown, gas release and the like.
In order to realize Ka-band coherent power synthesis, the national defense university giant Kingchuan researchers and the like combine the phase locking characteristic of TKA and the high power capacity characteristic of RCG, a triaxial relativity klystron amplifier adopting a slow wave extraction device is provided, the specific structure is shown in figure 1, and the triaxial relativity klystron amplifier adopting the slow wave extraction device is disclosed in the prior art 3 (patent application number: 202210720087.4). However, the coaxial slow wave extraction structure is only used for beam-wave energy exchange in this scheme, the typical TKA modulation structure is still adopted for IREB modulation and clustering, the fundamental wave current distribution of the device is shown in fig. 2, and the device still faces the narrow-channel long-distance electron beam transmission problem in the prior art 1.
Disclosure of Invention
The invention aims to provide a Ka-band phase-locked speed-adjusting coaxial Cerenkov device so as to overcome the defects in the prior art.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
a Ka band phase locked klystron coaxial coulomb device comprising:
the pre-modulation area is used for pre-modulating and bunching the strong current relativistic electron beams to realize the depth of 30% of fundamental current pre-modulation;
the energy extraction area is used for depth modulation and energy extraction of the electron beam of the strong current relativity theory;
for convenience of description, the left side of the structure is referred to as an input end, and the right side is referred to as an output end; the pre-modulation region output end is connected with the energy extraction region input end; the input end of the pre-modulation area is connected with a pulse power source, the energy extraction area is connected with an antenna, and the pulse power source and the antenna are of common structures in the HPM field and are not limited herein;
further, the coaxial cable comprises an inner conductor A and an outer conductor B which are rotationally symmetrical about a central axis, wherein an annular cavity between the inner conductor A and the outer conductor B is a drift tube, and the pre-modulation area and the energy extraction area are sequentially arranged between the inner conductor A and the outer conductor B in the drift tube.
Further, the inner conductor A is of a cylindrical structure, and the outer conductor B is of a tubular structure.
Further, the pre-modulation region comprises an injection cavity, a first modulator and a second modulator which are sequentially arranged;
the injection cavity is of a circular ring structure with an energy feed-in ring at one side, and the lower side of the energy feed-in ring is connected with the injection cavity in a mold rotating way;
the first modulator is used for first-stage amplification of fundamental wave modulation current, and comprises a first reflecting cavity and a first modulation cavity, wherein the first reflecting cavity and the first modulation cavity are of adjacent annular structures;
the second modulator is used for second-stage amplification of fundamental wave modulation current, and comprises a second reflecting cavity and a second modulation cavity, wherein the second reflecting cavity and the second modulation cavity are of adjacent annular structures.
Further, the energy extraction zone comprises a third reflecting cavity and a slow wave energy extraction structure which are arranged in sequence,
the third reflecting cavity is of a circular ring structure and is used for reflecting electromagnetic energy in the energy extraction area and inhibiting electromagnetic energy in the energy extraction area from being coupled into the pre-modulation area;
the slow wave energy extraction structure includes adjacent first and second slow wave structures.
Further, the first slow wave structure and the second slow wave structure are both periodic uniform slow wave structures.
Further, the first slow wave structure and the second slow wave structure both adopt an outer corrugated structure arranged on the outer conductor B, and the inner conductor A adopts a smooth waveguide structure, and the structure has the advantage that the sensitivity of the device parameters can be reduced on the premise of ensuring the high-power capacity characteristic of the high-frequency band HPM device.
Further, according to practical application requirements and device power capacity, the first slow wave structure 7 and the second slow wave structure 8 may be rectangular, trapezoidal or sinusoidal external ripple rectangular slow wave structures.
Further, the injection cavity, the first modulation cavity and the second modulation cavity all adopt a single-gap structure, and mode competition is restrained by utilizing the active restraining characteristic of the single-gap resonant cavity on non-rotationally symmetrical mode self-oscillation; the fundamental mode isolation of the first reflecting cavity, the second reflecting cavity and the third reflecting cavity is larger than 500MHz, so that mode competition caused by mutual coupling among reflectors can be effectively prevented; a rectangular structure with abrupt radius change is adopted between the third reflecting cavity and the first slow wave structure, and the structure is similar to a common cut-off neck structure of an HPM oscillator, and is matched with the third reflecting cavity for use, so that the pre-modulation area and the energy extraction area can be effectively isolated, and each part can be ensured to independently and stably work; the first slow wave structure and the second slow wave structure are designed by special structures and utilize a TEM mode and a TM mode 01 Mode coupling of the modes suppresses mode competition.
Further, the third reflecting cavity ensures that the pre-modulation region independently and stably works by inhibiting electromagnetic energy in the energy extraction region from being coupled into the pre-modulation region, so that the electron beam entering the energy extraction region is ensured to have stable pre-modulation frequency and pre-modulation depth; the electron beam with stable pre-modulation state can stably excite the working mode of the energy extraction region, and the intrinsic modes of the energy extraction region have no free competition, so that the Ka-band phase-locking speed-adjusting coaxial Cherenkov device provided by the invention can realize the high-power microwave HPM output of frequency locking and phase locking;
further, the working principle of the Ka-band phase-locked speed-adjusting coaxial Cerenkov device is as follows: when an externally injected microwave signal is fed into the injection cavity, the coaxial TM is excited at the gap of the injection cavity 012 A mode in which an axial electric field primarily modulates the velocity of the passing electron beam; the speed modulation of the electron beam is deepened by the first modulation cavity and the second modulation cavity, so that the modulation depth of the fundamental wave current of 30% is realized; when the electron beam enters the energy extraction area, an electromagnetic field with the same frequency as that of the injected microwave signal is excited at the two-section slow wave structure, and the electromagnetic field can further modulate the electron beam to realize the modulation depth of fundamental wave current not less than 110%; meanwhile, when the fully modulated electron beam passes through the second half section of the second slow wave structure, the electric field decelerates the electron beam, converts kinetic energy of the electron beam into electromagnetic energy and couples out; the energy extraction area is used for modulating and extracting the energy of the electron beam, and the electron beam is further modulated in the first half section of the first slow wave structure and the second slow wave structure.
Compared with the prior art, the invention has the advantages that: the invention belongs to an HPM oscillator, which can obviously accelerate the saturation of a device by introducing injected microwave power and pull the self-excitation frequency of the device to the frequency of the injected microwave; the invention can obviously reduce the dependence of the device on the injected microwave power, and is beneficial to improving the energy utilization rate of the HPM system; the invention can obviously shorten the axial length of the device and solve the problem of narrow-channel long-distance electron beam transmission faced by the high-frequency band HPM amplifier in the prior art.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a diagram of a triaxial relativity klystron amplifier using a slow wave extraction device as disclosed in prior art 3.
Fig. 2 is a graph of a fundamental modulated current distribution of prior art 3.
Fig. 3 is a block diagram of a Ka band phase-locked klystron type coaxial cerenkov device of the present invention.
Fig. 4 is a schematic representation of the pre-modulation zone structure of the present invention.
Fig. 5 is a schematic view of the structure of the energy extraction zone of the present invention.
Fig. 6 is a graph of the output power, time frequency and phase of the present invention.
Fig. 7 is a graph of the self-exciting power curve and self-exciting frequency of the present invention.
Fig. 8 is a fundamental modulated current profile of the present invention.
Fig. 9 is a phase lock bandwidth of the present invention.
Detailed Description
The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings so that the advantages and features of the present invention can be more easily understood by those skilled in the art, thereby making clear and defining the scope of the present invention.
Referring to fig. 3, this embodiment discloses a Ka band phase-locked klystron coaxial cerenkov device, which includes: the pre-modulation area is used for pre-modulating and bunching the strong current relativistic electron beams to realize the depth of 30% of fundamental current pre-modulation; and the energy extraction area is used for depth modulation and bunching of the strong current relativity electron beams, realizes the modulation depth of fundamental current not less than 110 percent, and simultaneously realizes high-efficiency conversion of beam-wave energy.
For convenience of description, the left side of the above structure is referred to as an input end, the right side is referred to as an output end, the output end of the pre-modulation region is connected to the input end of the energy extraction region, the input end of the pre-modulation region is connected to a pulse power source, the energy extraction region is connected to an antenna, and the pulse power source and the antenna are both common structures in the HPM field, which is not limited in this embodiment.
The Ka-band phase-locked speed-adjusting coaxial Cerenkov device of the embodiment comprises an inner conductor A and an outer conductor B which are rotationally symmetrical about a central axis, wherein a circular cavity between the inner conductor A and the outer conductor B is a drift tube, and the inner radius is R1 and the outer radius is R2; the inner conductor a and the outer conductor B may be made of a desired conductor material, such as aluminum, stainless steel, oxygen-free copper, etc., and the pre-modulation region and the energy extraction region are sequentially disposed between the inner conductor a and the outer conductor B.
The inner conductor A is of a cylindrical structure, and the outer conductor B is of a tubular structure.
Referring to fig. 4, the pre-modulation region includes an injection chamber 1, a first modulator, and a second modulator, which are sequentially disposed.
The injection cavity 1 is of a circular ring structure with an energy feed-in ring at one side, the inner radius is R4, the outer radius is R3, and the length is L3; the axial dimensions of the injection cavity 1 and the pulse power source may be optimized according to practical applications, which is not limited in this embodiment. The inner radius of the energy feed-in ring at the right side of the injection cavity 1 is R5, the outer radius is R6, and the length is L4; the lower side of the energy feed-in ring is connected with an injection cavity die, and the injection cavity die is converted into a common structure of the HPM amplifier, which is not described in detail in this embodiment.
The first modulator is used for first-stage amplification of fundamental wave modulation current, and comprises a first reflecting cavity 2 and a first modulating cavity 3, wherein the first reflecting cavity 2 and the first modulating cavity 3 are of adjacent annular structures, the inner radius of the first reflecting cavity 2 is R8, the outer radius of the first reflecting cavity is R7, and the length of the first reflecting cavity is L5; the inner radius of the first modulation cavity 3 is R9, the outer radius is R10, and the length is L6; the axial distance between the first reflecting cavity 2 and the first modulating cavity 3 is L7, and the axial distance between the first reflecting cavity 2 and the injection cavity 1 is L1.
The second modulator is used for second-stage amplification of fundamental wave modulation current, and comprises a second reflecting cavity 4 and a second modulating cavity 5, wherein the second reflecting cavity 4 and the second modulating cavity 5 are of adjacent annular structures, the inner radius of the second reflecting cavity 4 is R12, the outer radius of the second reflecting cavity is R11, and the length of the second reflecting cavity is L8; the inner radius of the second modulation cavity 5 is R13, the outer radius is R14, and the length is L9; the axial distance between the second reflecting cavity 4 and the second modulating cavity 5 is L10, and the axial distance between the second reflecting cavity 4 and the first modulating cavity 3 is L2.
In this embodiment, the first reflective cavity 2 and the second reflective cavity 4 are used to isolate adjacent beam-wave interaction resonant cavities, so as to ensure stable operation of the device and inhibit growth of parasitic modes.
The injection cavity 1, the first modulator and the second modulator 2 jointly form the pre-modulation area for pre-modulation and bunching of the strong current relativity electron beams to realize the pre-modulation depth of 30% of fundamental current.
Referring to fig. 5, the energy extraction region includes a third reflective cavity 6 and a slow wave energy extraction structure disposed in sequence.
The third reflecting cavity 6 is of a circular ring structure, the inner radius of the third reflecting cavity is R16, the outer radius of the third reflecting cavity is R15, and the length of the third reflecting cavity is L11; the axial distance between the third reflection cavity 6 and the second modulation cavity 5 is L3, and the third reflection cavity 6 is configured to reflect electromagnetic energy in the energy extraction area, inhibit electromagnetic energy in the energy extraction area from coupling into the pre-modulation area, ensure that the pre-modulation area works independently and stably, and further ensure that an electron beam entering the energy extraction area has stable pre-modulation frequency and pre-modulation depth.
The slow wave energy extraction structure comprises a first slow wave structure 7 and a second slow wave structure 8 which are adjacent, the first slow wave structure 7 and the second slow wave structure 8 are periodic uniform slow wave structures, and in order to improve the power capacity of the device, the first slow wave structure 7 and the second slow wave structure 8 are both external corrugated structures, and the inner conductors of the first slow wave structure and the second slow wave structure 8 are smooth waveguide structures; the first slow wave structure 7 and the second slow wave structure 8 together form a slow wave energy extraction structure; the inner radius of the slow wave energy extraction structure is R17, the outer radius is R18, and the axial length of the slow wave energy extraction structure can be obtained according to actual optimization; the third reflective cavity 6 and the slow wave energy extraction structure are axially spaced by L12.
In this embodiment, the first slow wave structure 7 is a five-period uniform outer corrugated rectangular slow wave structure, the inner radius of the outer corrugated rectangular slow wave structure is R19, the outer radius is R18, the period length is L15, and the thickness of the blade is L16; the distance between the first slow wave structure 7 and the left side of the slow wave energy extraction structure is L13; the second slow wave structure 8 is a seven-period uniform outer ripple rectangular slow wave structure, the inner radius of the outer ripple rectangular slow wave structure is R20, the outer radius is R18, the period length is L17, and the thickness of the blade is L18; the axial distance between the first slow wave structure 7 and the second slow wave structure 8 is L14.
The third reflection cavity 6 and the slow wave energy extraction structure jointly form the energy extraction area, and are used for deep modulation and energy extraction of the strong current relativity electron beam, so that the modulation depth of fundamental wave current is not lower than 110%, and high-efficiency conversion of beam-wave energy is realized.
Referring to fig. 6, an output power curve, a time-frequency curve and a time-phase curve of the present embodiment are shown; under the conditions of 440kV electron beam voltage, 5.35kA current, 4kW injected microwave power and 1.0T guiding magnetic field intensity, the triaxial relativity klystron amplifier of the embodiment obtains 550MW HPM output, the injection ratio is-51.4 dB, and the saturation time of the output microwave power is about 20ns; the triaxial relativity klystron amplifier of the embodiment outputs microwave with stable frequency at 29.0GHz and phase jitter less than +/-5 degrees, which proves that the embodiment can realize HPM output with frequency phase locking. Meanwhile, the injection ratio of the embodiment is obviously lower than the injection ratio (-35.4 dB) of an injection locking hollow RCG in the prior art 2, and the pre-modulation region and energy extraction region proposal provided by the embodiment can obviously reduce the dependence of devices on the injection microwave power and is beneficial to improving the energy utilization rate of an HPM system.
Referring to FIG. 7, the self-excitation power curve and self-excitation frequency of the present invention without microwave injection are shown; the self-excitation power of the device is 524MW, the self-excitation frequency is 29.007GHz, and the saturation time is 32ns; in one aspect, the invention is demonstrated to belong to an HPM oscillator, rather than the HPM amplifier of prior art 3 in the introduction; on the other hand, the introduction of the injected microwave power can obviously accelerate the saturation of the device and pull the self-excitation frequency of the device to the frequency of the injected microwave.
Referring to fig. 8, in the fundamental wave modulation current distribution curve of the present embodiment, the fundamental wave modulation current of the device gradually deepens at the injection cavity 1, the first modulator, and the second modulator, and reaches 1.63kA at the input end of the energy extraction region, corresponding to 30.5% of the fundamental wave current modulation depth; then, the fundamental wave modulation current of the device is further deepened at the first slow wave structure 7 and the second slow wave structure 8, the maximum value is reached at the third period of the second slow wave structure 8, the corresponding peak modulation current is 6.80kA, and the fundamental wave current modulation depth is 127.1%; as can be seen from comparing fig. 2, the present invention is significantly different from the prior art 3 described in the background section, that is, the triaxial klystron amplifier (fig. 2) using the slow wave extraction device, the slow wave extraction device 207 in fig. 2 is only used for extracting energy of the electron beam, the electron beam cannot be further modulated after entering the slow wave extraction device 207, and the slow wave energy extraction structure in the present invention is used for modulating and extracting energy of the electron beam at the same time; based on the above, the invention can obviously shorten the axial length of the device and solve the narrow-channel long-distance electron beam transmission problem faced by the high-frequency band HPM amplifier in the prior art 1.
Referring to fig. 9, a schematic diagram of the phase locking bandwidth of the present invention is shown, and when the frequency of the injected microwave changes in the range of 28.99GHz to 29.02GHz, the output microwave phase of the device can be well locked after 50ns, which indicates that the phase locking bandwidth of the present invention is 30MHz.
The invention is composed of a pre-modulation area and an energy extraction area, wherein the pre-modulation area is used for high-efficiency absorption of injected microwave power and realizing 30% of fundamental current pre-modulation depth, and the energy extraction area is used for improving the fundamental current modulation depth of a device and realizing high-efficiency beam-wave energy conversion; in the invention, the pre-modulation area adopts two groups of cascade modulation cavities to carry out current modulation, so that the injection ratio of devices can be reduced; the energy extraction area is used for modulating the electron beam and extracting the energy at the same time, so that the device length can be obviously shortened, and the narrow-channel long-distance electron beam transmission problems in the prior art 1 and the prior art 3 are solved; meanwhile, the invention adopts the reflecting cavity to isolate the beam interaction resonant cavity and inhibit mode competition, so that the dependence of the prior art 2 on the wave absorbing material can be solved.
Although the embodiments of the present invention have been described with reference to the accompanying drawings, the patentees may make various modifications or alterations within the scope of the appended claims, and are intended to be within the scope of the invention as described in the claims. In particular, the device pre-modulation area adopts a single-group or multi-group cascade current modulation structure, the modulation cavity adopts a single-gap or multi-gap structure, the energy extraction area adopts a single-section or multi-section slow wave structure, and all HPM devices adopting the ideas of fundamental current pre-modulation and slow wave structure current depth modulation and energy extraction are within the protection scope of the invention.
Claims (10)
1. A Ka-band phase-locked klystron-type coaxial coulomb device, comprising:
the pre-modulation area is used for pre-modulating and bunching the strong current relativistic electron beams to realize the depth of 30% of fundamental current pre-modulation;
the energy extraction area is used for depth modulation and energy extraction of the strong current relativity electron beam, realizes the modulation depth of fundamental current not less than 110 percent, and simultaneously realizes high-efficiency conversion of beam-wave energy;
the pre-modulation zone output is coupled to the energy extraction zone input, the pre-modulation zone input is coupled to a pulsed power source, and the energy extraction zone is coupled to an antenna.
2. The Ka-band phase-locked klystron coaxial coulomb device of claim 1, comprising an inner conductor a and an outer conductor B rotationally symmetric about a central axis, the annular cavity between the inner conductor a and the outer conductor B being a drift tube, the pre-modulation region and the energy extraction region being disposed in sequence between the inner conductor a and the outer conductor B.
3. The Ka-band phase-locked klystron coaxial coulomb device of claim 2, wherein the inner conductor a is a cylindrical structure and the outer conductor B is a tubular structure.
4. The Ka-band phase-locked klystron coaxial coulomb device of claim 2, wherein the pre-modulation region comprises an injection cavity, a first modulator, and a second modulator, disposed in sequence;
the injection cavity is of a circular ring structure with an energy feed-in ring at one side, and the lower side of the energy feed-in ring is connected with the injection cavity in a mold rotating way;
the first modulator is used for first-stage amplification of fundamental wave modulation current, and comprises a first reflecting cavity and a first modulation cavity, wherein the first reflecting cavity and the first modulation cavity are of adjacent annular structures;
the second modulator is used for second-stage amplification of fundamental wave modulation current, and comprises a second reflecting cavity and a second modulation cavity, wherein the second reflecting cavity and the second modulation cavity are of adjacent annular structures.
5. The Ka-band phase-locked klystron coaxial coulomb device of claim 4, wherein the energy extraction region comprises a third reflective cavity and a slow wave energy extraction structure, sequentially disposed;
the third reflecting cavity is of a circular ring structure and is used for reflecting electromagnetic energy in the energy extraction area and inhibiting electromagnetic energy in the energy extraction area from being coupled into the pre-modulation area.
6. The Ka-band phase-locked klystron coaxial coulomb device of claim 5, wherein the slow wave energy extraction structure comprises a first slow wave structure and a second slow wave structure which are sequentially arranged, the first slow wave structure and the second slow wave structure are both periodic uniform slow wave structures, and the first slow wave structure and the second slow wave structure can adopt rectangular, trapezoidal or sine-shaped external ripple rectangular slow wave structures.
7. The Ka-band phase-locked klystron coaxial coulomb device of claim 6, wherein the first slow wave structure and the second slow wave structure each adopt an outer corrugated structure disposed on the outer conductor B, and the inner conductor a adopts a smooth waveguide structure.
8. The Ka-band phase-locked klystron coaxial coulomb device of claim 5, wherein the injection cavity, the first modulation cavity and the second modulation cavity each adopt a single-gap structure, and mode competition is suppressed by utilizing the active suppression characteristic of the single-gap resonant cavity to non-rotationally symmetric mode self-oscillation; the fundamental mode isolation of the first reflecting cavity, the second reflecting cavity and the third reflecting cavity is larger than 500MHz, so that mode competition caused by mutual coupling among reflectors is prevented; a rectangular structure with a radius abrupt change is adopted between the third reflecting cavity and the first slow wave structure, and the structure is matched with the third reflecting cavity for use and is used for isolating the pre-modulation area and the energy extraction area; the first slow wave structure and the second slow wave structure are designed by special structures and utilize a TEM mode and a TM mode 01 Mode coupling of the modes suppresses mode competition.
9. The Ka-band phase-locked klystron coaxial coulomb device of claim 5, wherein the third reflective cavity ensures that the pre-modulation zone independently and stably operates by inhibiting electromagnetic energy within the energy extraction zone from coupling into the pre-modulation zone, thereby ensuring that the electron beam entering the energy extraction zone has a stable pre-modulation frequency and pre-modulation depth; an electron beam with a stable pre-modulation state will stably excite the modes of operation of the energy extraction region, with no free competition between the eigenmodes of the energy extraction region.
10. The Ka-band phase-locked klystron coaxial coulomb device of claim 1, wherein when an externally injected microwave signal is fed into the injection cavity, a coaxial TM is excited at the gap of the injection cavity 012 A mode in which an axial electric field primarily modulates the velocity of the passing electron beam; the speed modulation of the electron beam is deepened by the first modulation cavity and the second modulation cavity, so that the modulation depth of the fundamental wave current of 30% is realized; when the electron beam enters the energy extraction region, the excitation at the two-section slow wave structure is same as the injection of microwave signalsAn electromagnetic field of a frequency which further modulates the electron beam to achieve a fundamental current modulation depth of not less than 110%; meanwhile, when the fully modulated electron beam passes through the second half section of the second slow wave structure, the electric field decelerates the electron beam, converts kinetic energy of the electron beam into electromagnetic energy and couples out; the energy extraction area is used for modulating and extracting energy of the electron beam at the same time, and the electron beam is further modulated at the first half section of the first slow wave structure and the second slow wave structure.
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