CN115148565B - Triaxial relativity klystron amplifier adopting slow wave extraction device - Google Patents

Triaxial relativity klystron amplifier adopting slow wave extraction device Download PDF

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CN115148565B
CN115148565B CN202210720087.4A CN202210720087A CN115148565B CN 115148565 B CN115148565 B CN 115148565B CN 202210720087 A CN202210720087 A CN 202210720087A CN 115148565 B CN115148565 B CN 115148565B
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slow wave
extraction device
electron beam
wave extraction
cavity
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CN115148565A (en
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巨金川
周云霄
葛行军
张威
张军
陈英豪
李莹
邓如金
何昌杰
于状
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National University of Defense Technology
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J25/00Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
    • H01J25/02Tubes with electron stream modulated in velocity or density in a modulator zone and thereafter giving up energy in an inducing zone, the zones being associated with one or more resonators
    • H01J25/10Klystrons, i.e. tubes having two or more resonators, without reflection of the electron stream, and in which the stream is modulated mainly by velocity in the zone of the input resonator
    • H01J25/14Klystrons, i.e. tubes having two or more resonators, without reflection of the electron stream, and in which the stream is modulated mainly by velocity in the zone of the input resonator with tube-like electron stream coaxial with the axis of the resonators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J23/00Details of transit-time tubes of the types covered by group H01J25/00
    • H01J23/12Vessels; Containers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00Reducing energy consumption in communication networks
    • Y02D30/70Reducing energy consumption in communication networks in wireless communication networks

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Abstract

The invention discloses a triaxial relativity klystron amplifier adopting a slow wave extraction device, which comprises the following components: an electron beam emitting structure for the generation of a high current relativity electron beam (IREB); the electron beam modulation structure is used for modulating and bunching IREB and realizing the modulation depth of fundamental current not lower than 110%; the slow wave extraction device is used for converting the kinetic energy of the IREBs after the complete clustering into microwave energy and coupling out; the invention combines the electron beam modulation structure and the slow wave extraction device, on one hand, the problem that the frequency and the phase of the output microwave are difficult to lock caused by free competition of the eigenmodes of the slow wave structure can be overcome, and on the other hand, the effective improvement of the power capacity of the triaxial relativity klystron amplifier can be realized, thereby providing an optional high-frequency band high-power microwave (HPM) source device for a HPM coherent synthesis system.

Description

Triaxial relativity klystron amplifier adopting slow wave extraction device
Technical Field
The invention relates to a high-power microwave source device in the technical field of high-power microwaves, in particular to a triaxial relativity klystron amplifier adopting a slow wave extraction device.
Background
High power microwaves (High Power Microwave, HPM) generally refer to electromagnetic waves having peak powers greater than 100 MW and frequencies between 1 and 300 GHz. The high-power microwave source is a core component of a high-power microwave system, and converts the kinetic energy of a strong-current relativity electron beam into microwave energy through a high-frequency electromagnetic structure specially designed in the device, so that directional high-power microwave radiation is generated through a transmitting antenna. The pursuit of higher power, higher frequency, higher efficiency microwave output is an important development goal in the HPM technology field. Over fifty years of research and development, several typical HPM devices are capable of implementing GW-level HPM output. However, due to the physical mechanisms such as radio frequency breakdown, space charge effect and the like and the limitations of factors such as materials and processing technology, the output power of a single HPM generating device is difficult to further increase. Coherent synthesis technology can obtain in far field by coherent synthesis of microwaves generated by multiple HPM sourcesN 2 Double peak power density [ ]NThe number of high power microwave sources), is expected to achieve equivalent HPM radiation on the order of hundreds of GWs. In order to achieve higher synthesis efficiency, the coherent synthesis technology puts high requirements on the characteristics of frequency, phase and the like of microwave output by an HPM source, and a general relativistic oscillator is difficult to meet.
The triaxial relativity klystron amplifier (Triaxial Klystron Amplifier, TKA) is an HPM source based on an electron beam distribution modulation theory, realizes modulation, bunching and beam-wave energy conversion of electron beams by utilizing mutually independent beam-wave interaction resonant cavity structures, can realize HPM output with stable frequency and controllable phase, and is one of preferred devices for realizing high-frequency band HPM coherent synthesis. At present, TKA has realized GW-level frequency-locking and phase-locking HPM output in X-band and Ku-band. However, when TKA expands to higher frequency bands such as Ka, the power capacity of the device decreases due to the size co-transition effect (the size of the HPM source gradually decreases with the increase of the operating frequency), and it is difficult to realize the HPM microwave output of GW level. The radio frequency breakdown of the output cavity is one of the core problems for limiting the Ka-band TKA to realize higher-power microwave output.
Conventional TKA commonly employs single-gap or multi-gap standing wave output cavities. For example, the prior art1:ZHANG W, JU J, ZHANG J, et al. A high-gain and high-efficiency X-band triaxial klystron amplifier with two-stage cascaded bunching cavities [J]Physics of Plasmas, 2017, 24 (12). 123118 discloses an X-band TKA having a structure shown in fig. 1, which is composed of a cathode holder 101, an anode outer tube 102, a cathode 103, an inner conductor 104, an injection chamber 105, a first modulation chamber 106, a second modulation chamber 107, an extraction chamber 108, a first reflection chamber 109, a second reflection chamber 110, a third reflection chamber 111, an electron beam collector 112, an output port adjusting block 113, and an output waveguide 114. Specifically, the cathode holder 101, the anode outer can 102, and the cathode 103 constitute an electron beam emission structure of the device; the implantation chamber 105, the first modulation chamber 106 and the second modulation chamber 107 constitute an electron beam modulation structure of the device; the extraction cavity 108, electron beam collector 112, output port tuning block 113 and output waveguide 114 constitute the output cavity of the device. The electron beam emission structure is used for generating the electron beam of the strong current relativity theory, the electron beam modulation structure is used for fully modulating and clustered the electron beam of the strong current relativity theory, and the output cavity is used for converting and extracting beam-wave energy. The output chamber of prior art 1 has an operating mode of TM 012 The working principle of the die is as follows: the well-clustered electron beams drift through the output cavity gap to excite an operational mode in the output cavity, where the electromagnetic field decelerates the electron beam, converts the kinetic energy of the electrons to electromagnetic energy, and is coupled out via a slot between extraction cavity 108 and microwave output waveguide 114. As TKA expands toward the Ka band, extraction cavity 108 decreases dramatically in size due to the size co-transition effect, necessitating the use of more gap standing wave extraction cavities. For example, the Ka band TKA proposed by university of electronics technology employs a three gap standing wave extraction cavity, see prior art 2: LIS, DUAN Z, HUANG H, et al Extended interaction oversized coaxial relativistic klystron amplifier with gigawatt-level output at Ka band [ J]Physics of Plasmas, 2018, 25 (4): 983. However, even though the multi-gap standing wave extraction cavity is introduced, the Ka-band TKA of the prior art 2 still faces serious risk of radio frequency breakdown, and the maximum electric field of the surface of the output cavity is 2.33 MV/cm under the condition of output power of 1.17 and GW, and the maximum surface field strength of the device is 2.15 MV/cm under the condition of corresponding 1 GW.
The overmode slow wave structure (Slow Wave Structure, SWS) has the characteristics of high power capacity, high beam-wave energy conversion efficiency and the like, and is widely used for various Cerenkov oscillators, such as the prior art 3: BAI Z, ZHANG J, ZHANG H.A dual-mode operation overmoded coaxial millimeter-wave generator with high power capacity and pure transverse electric and magnetic mode output [ J]Physics of Plasmas, 2016, 23 (4) 225104 discloses a Cerenkov oscillator of the Ka band having an output cavity structure of eight cycles SWS, wherein the maximum electric field at the surface of the output cavity is 1.42 MV/cm under the condition of output power 611 MW, and the maximum surface field strength is 1.82 MV/cm under the condition of corresponding 1 GW. The SWS extraction structure power capacity in prior art 3 is significantly higher compared to the multi-gap standing wave extraction cavity in prior art 2. However, the Cerenkov oscillator often adopts one-stage or two-stage cascaded SWS, so as to realize self-oscillation of the SWS working mode and realize high-power microwave output, and the SWS working mode in the Cerenkov oscillatorQThe value is lower, the free competition process between different eigenmodes in the initial vibration starting stage is more complex, and although the SWS working mode is dominant in the competition process and successfully inhibits other modes, the growth process of the SWS working mode is not unique. In particular, when a Cerenkov oscillator is used for experiments, the output microwave frequency between different cannons has jitter of tens of MHz, and the output microwave frequency has poor color property. Therefore, it is difficult for the Cerenkov oscillator to achieve a frequency stable HPM output. Further, the phase of the microwave output by the Cerenkov oscillator is more difficult to control, and coherent synthesis is difficult to realize.
Disclosure of Invention
The invention aims to solve the technical problems: aiming at the problems in the prior art, the invention combines an electron beam modulation structure and a slow wave extraction device, provides the triaxial relativity klystron amplifier adopting the slow wave extraction device, can overcome the problem that the output microwave frequency and the phase are difficult to lock caused by free competition of the eigenmodes of the slow wave structure on one hand, can realize the effective improvement of the power capacity of the triaxial relativity klystron amplifier on the other hand, and provides an optional high-power microwave source device for a high-frequency-band high-power microwave coherent synthesis system.
In order to solve the technical problems, the invention adopts the following technical scheme:
a triaxial relativistic klystron amplifier employing a slow wave extraction device, comprising:
an electron beam emission structure for generating a strong current relativistic electron beam;
the electron beam modulation structure is used for modulating and bunching the electron beams in the strong current relativity theory and realizing the modulation depth of fundamental current not less than 110%;
the slow wave extraction device is used for converting the kinetic energy of the electron beams after the sufficient bunching into microwave energy and coupling out;
the output end of the electron beam emission structure is connected with the input end of the electron beam modulation structure, and the output end of the electron beam modulation structure is connected with the input end of the slow wave extraction device, so that the electron beam modulation structure and the slow wave extraction device (207) are combined to overcome the problem that the frequency and the phase of output microwaves are difficult to lock due to free competition of the eigenmodes of the slow wave structure, and the power capacity of the triaxial relativity klystron amplifier is improved.
Optionally, the slow wave extraction device includes inner conductor and the outer conductor of cover outside the inner conductor, form the ring shape cavity between inner conductor and the outer conductor, the ring shape cavity comprises drift connecting channel, reflection chamber and the output waveguide of intercommunication in proper order, the inner wall of output waveguide is smooth in order to form smooth waveguide structure, be equipped with slow wave structure on the outer wall of output waveguide, slow wave extraction device is with inner conductor central axis rotational symmetry.
Optionally, the reflecting cavity is formed by a circular groove arranged on the outer wall of the inner conductor, a circular groove arranged on the inner wall of the outer conductor and a circular cavity part positioned between the two circular grooves.
Optionally, the slow wave structure is a periodic corrugated structure arranged on the inner wall of the outer conductor, and a single periodic part of the periodic corrugated structure is one or a combination of more than two of rectangle, trapezoid, cosine curve and irregular shape.
Optionally, the inner conductor is cylindrical, and the outer conductor is a tubular structure.
Optionally, a radius difference R2-R1 between the inner radius R1 and the outer radius R2 of the drift connection channel is smaller than half a wavelength of the microwave signal of the external injection electron beam modulation structure.
Optionally, the inner radius R3 and the outer radius R4 of the reflective cavity satisfy R3< R1, R4> R2, where R1 is the inner radius of the drift connection channel and R2 is the outer radius of the drift connection channel.
Optionally, the inner radius R5 and the outer radius R6 of the output waveguide satisfy R3< R5, R4> R6, where R3 is the inner radius of the reflective cavity and R4 is the outer radius of the reflective cavity.
Optionally, the electron beam emitting structure includes: the cathode seat and the anode outer cylinder are sleeved on the outer side of the cathode seat and are coaxially arranged, a cathode for generating a strong current relativity electron beam (Intense Relativistic Electron Beam, IREB for short) is arranged at the edge of the cathode seat, and the cathode faces the input end of the electron beam modulation structure so as to send the generated strong current relativity electron beam into the input end of the electron beam modulation structure.
Optionally, the electron beam modulating structure includes: the injection cavity is used for realizing the absorption of externally injected microwave signals and the primary modulation of electron beams; a modulation reflection cavity for further modulating the electron beam to generate an electron beam having a fundamental current modulation depth of not less than 110%; the input ends of the injection cavity, the modulation reflection cavity and the slow wave extraction device are connected in sequence.
Optionally, the modulation reflection cavity includes the first modulation reflection cavity and the second modulation reflection cavity that communicate in proper order, the output of injection cavity links to each other with the input of first modulation reflection cavity, the output of second modulation reflection cavity links to each other with slow wave extraction element's input.
Compared with the prior art, the invention has the following advantages:
1. according to the invention, the external ripple slow wave structure is introduced into the triaxial relativity klystron amplifier, so that on one hand, the power capacity of the triaxial relativity klystron amplifier is increased, and on the other hand, the error tolerance of the triaxial relatcality klystron amplifier to the eccentricity and dislocation between the inner conductor and the outer conductor is improved, and the triaxial relatcality klystron amplifier is beneficial to realizing high-power microwave output in experiments.
2. The invention adopts a depth clustered electron beam excitation slow wave structure which is obtained by pre-modulating an electron beam modulating structure of a triaxial relativity klystron amplifier, the working frequency of the slow wave structure is similar to the pre-modulating frequency of the electron beam so as to directly increase and amplify, and free competition does not exist among intrinsic modes of the slow wave structure; therefore, the triaxial relativity klystron amplifier adopting the slow wave extraction device can realize HPM output with stable frequency and phase under the condition of ensuring the slow wave structure to realize high-efficiency beam-wave energy conversion, and solves the problem that the frequency and phase of the microwave output by the slow wave structure in the Cerenkov oscillator are difficult to control.
Drawings
Fig. 1 is a schematic diagram of an X-band TKA structure in prior art 1.
Fig. 2 is a schematic diagram of a Triaxial Klystron Amplifier (TKA) according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a slow wave extraction device according to an embodiment of the invention.
Fig. 4 is a graph of output microwave power and a microwave spectrum of the slow wave extraction device according to an embodiment of the invention.
Fig. 5 is a graph showing a phase time variation of an output microwave of the slow wave extraction device according to an embodiment of the present invention.
Fig. 6 is a fundamental current distribution curve of a slow wave extraction device according to an embodiment of the present invention.
Description of the background section: 101. a cathode base; 102. an anode outer cylinder; 103. a cathode; 104. an inner conductor; 105. an injection cavity; 106. a first modulation cavity; 107. a second modulation cavity; 108. an extraction chamber; 109. a first reflective cavity; 110. a second reflective cavity; 111. a third reflective cavity; 112. an electron beam collector; 113. an output port adjusting block; 114. an output waveguide;
illustrative examples of the invention: 201. a cathode base; 202. an anode outer cylinder; 203. a cathode; 204. an injection cavity; 205. a first modulating reflective cavity; 206. a second modulating reflective cavity; 207. a slow wave extraction device; 301. an inner conductor; 302. an outer conductor; 303. a drift connection channel; 304. a reflective cavity; 305. an output waveguide; 306. slow wave structure.
Detailed Description
As shown in fig. 2, the triaxial relativity klystron amplifier adopting the slow wave extraction device according to the present embodiment includes:
an electron beam emitting structure for generating a high current relativity electron beam (Intense Relativistic Electron Beam, abbreviated to IREB);
the electron beam modulation structure is used for modulating and bunching IREB and realizing the modulation depth of fundamental current not lower than 110%;
slow wave extraction means 207 for converting the kinetic energy of the fully clustered IREBs into microwave energy and coupling out;
the output end of the electron beam emitting structure is connected with the input end of the electron beam modulating structure, and the output end of the electron beam modulating structure is connected with the input end of the slow wave extracting device 207, so that the electron beam modulating structure and the slow wave extracting device 207 are combined to overcome the problem that the frequency and the phase of the output microwaves are difficult to lock due to free competition of the eigenmodes of the slow wave structure, and the power capacity of the triaxial relativity klystron amplifier is improved.
The slow wave extraction device 207 is used for converting the kinetic energy of the electron beam subjected to depth modulation into microwave energy and coupling the microwave energy out, and the output side of the slow wave extraction device is a radiation antenna (not belonging to a triaxial relativity klystron amplifier, which is omitted from the figure). As shown in fig. 3, the slow wave extraction device 207 in this embodiment includes an inner conductor 301 and an outer conductor 302 sleeved outside the inner conductor 301, a circular cavity is formed between the inner conductor 301 and the outer conductor 302, the circular cavity is composed of a drift connection channel 303, a reflection cavity 304 and an output waveguide 305 which are sequentially communicated, the inner wall of the output waveguide 305 is smooth to form a smooth waveguide structure, a slow wave structure 306 is provided on the outer wall of the output waveguide 305, and the slow wave extraction device 207 is arranged on the central axis of the inner conductor 301 (i.e. in fig. 3ozAn axis) is rotationally symmetric.
In this embodiment, the inner conductor 301 is cylindrical, and the outer conductor 302 is a tubular structure. The inner conductor 301 and the outer conductor 302 may be made of a desired conductor material, such as stainless steel, oxygen-free copper, or the like, as desired.
The purpose of the drift connection channel 303 is to connect the electron beam modulating structure and the annular cavity portion of the slow wave extraction device. As shown in fig. 3, the drift connection channel 303 has an inner radius R1, an outer radius R2, and an axial length L1. To achieve electromagnetic isolation between beam-wave interaction resonators of a triaxial relativity klystron amplifier (TKA), the radius difference R2-R1 between the inner radius R1 and the outer radius R2 of the drift connection channel 303 in this embodiment is smaller than half a wavelength of a microwave signal of an external injection electron beam modulation structure.
The reflecting cavity 304 is used for connecting the drift connecting channel 303 and the output waveguide 305, and meanwhile, the reflecting cavity 304 also plays a role in isolating an electron beam modulating structure from a slow wave extracting device and realizing electromagnetic isolation of a beam-wave interaction resonant cavity of the triaxial relativity klystron amplifier (TKA). The reflective cavity 304 is a circular cavity formed on the inner conductor 301 and the outer conductor 302. As shown in fig. 3, the reflective cavity 304 in this embodiment is formed by an annular groove formed on the outer wall of the inner conductor 301, an annular groove formed on the inner wall of the outer conductor 302, and an annular cavity portion between the two annular grooves. As shown in FIG. 3, the reflective cavity 304 has an inner radius R3, an outer radius R4, and an axial length L2. In this embodiment, the reflective cavity 304 is inzThe direction is asymmetric, for a smooth transition of the dimensions between the drift connection channel 303 and the output waveguide 305, the inner radius R3 and the outer radius R4 of the reflective cavity 304 satisfy R3<R1、R4>R2, where R1 is the inner radius of the drift connection channel 303 and R2 is the outer radius of the drift connection channel 303.
As shown in fig. 3, the output waveguide 305 has an inner radius R5, an outer radius R6, and an axial length L3. In this embodiment, the inner radius R5 and the outer radius R6 of the output waveguide 305 satisfy R3< R5, R4> R6, where R3 is the inner radius of the reflective cavity 304 and R4 is the outer radius of the reflective cavity 304.
The outer wall of the output waveguide 305 is provided with a slow wave structure 306, and the inner wall is a smooth waveguide structure, so that a single-side outer corrugated structure is formed. The reason why the inner wall adopts the smooth waveguide and the corrugated structure is not provided is as follows: the inner and outer double-ripple slow wave structure is sensitive to the size, and the eccentricity and dislocation of the inner and outer ripples in an experiment can cause the electromagnetic parameters of the slow wave structure to deviate from preset values seriously, so that the efficiency of a triaxial relativistic klystron amplifier (TKA) is reduced; the outer wall of the output waveguide 305 adopted in the embodiment is provided with the slow wave structure 306, the inner wall is a smooth waveguide structure to form a single-side outer corrugated structure, the problem of dislocation of inner and outer corrugations is avoided, and the eccentricity tolerance of the inner and outer conductors is higher; meanwhile, in order to effectively improve the power capacity of the triaxial relativity klystron amplifier (TKA), the difference between the inner and outer radii of the output waveguide 305 is not limited to be within a half wavelength, and an overmode structure may be adopted.
In this embodiment, the slow wave structure 306 is a periodic corrugated structure disposed on the inner wall of the outer conductor 302, and a single periodic portion of the periodic corrugated structure is one or more of rectangular, trapezoidal, cosine-curved, and irregular shapes. In this embodiment, a specific single periodic portion is rectangular, so as to form a periodic rectangular structure; in this embodiment, the inner radius of the slow wave extraction device 207 is R7, the outer radius is R6, the period length is L5, and the ripple length is L6, so as to satisfy L5> L6; the period number of the slow wave extraction device 207 can be optimized according to the actual design requirement; the axial length between the reflective cavity 304 and the slow wave structure 306 is L4. The number of periods (the number of repetitions of a single period portion) of the periodic corrugated structure can be selected as required, for example, a five-period rectangular corrugated structure in the present embodiment, to convert the kinetic energy of the deep-modulated intense-current relativity electron beam into electromagnetic energy and realize the coupling-out of the high-power microwave HPM.
As shown in fig. 2, the electron beam emitting structure in the present embodiment includes: the cathode seat 201 and the anode outer barrel 202 are sleeved outside the cathode seat 201, the cathode outer barrel 202 and the cathode outer barrel are coaxially arranged, a cathode 203 for generating a strong current relativity electron beam (Intense Relativistic Electron Beam, IREB for short) is arranged at the edge of the cathode seat 201, and the cathode 203 faces to the input end of the electron beam modulation structure so as to send the generated strong current relativity electron beam to the input end of the electron beam modulation structure.
As shown in fig. 2, the electron beam modulation structure in the present embodiment includes: an injection cavity 204 for implementing absorption of an externally injected microwave signal and preliminary modulation of an electron beam; a modulation reflection cavity for further modulating the electron beam to generate an electron beam having a fundamental current modulation depth of not less than 110%; the input ends of the injection cavity 204, the modulation reflection cavity and the slow wave extraction device are connected in sequence.
The injection cavity 204 is used for realizing the absorption of externally injected microwave signals and the primary modulation of electron beams, and can select a re-entry structure or an overmode rectangular structure according to the working frequency band of the device, wherein a general Ku and below frequency band select a re-entry structure and a frequency band above Ku select an overmode rectangular structure; the specific reason is that the size of the high-frequency band device is small, the adjustable range of the reentrant structure is limited greatly, and high-efficiency injection microwave power absorption is difficult to realize.
The modulating reflection cavity is used for further modulating the electron beam to generate the electron beam with the fundamental current modulation depth not less than 110% so as to excite the working mode of the slow wave extraction device, skip the free competition stage and finally realize HPM output of frequency locking and phase locking, thereby solving the problem that the frequency and phase of the output microwave are difficult to lock due to the free competition of the intrinsic mode of the slow wave structure. In this embodiment, the TKA modulation reflective cavity and the adjacent reflective cavities are collectively referred to as modulation reflective cavities, and are not separately described.
The number of the substructures of the modulation reflection cavity can be selected according to the requirement, and the substructures can be single-gap or multi-gap cavity structures. For example, in an alternative embodiment, as shown in fig. 2, the modulating and reflecting cavity in this embodiment includes a first modulating and reflecting cavity 205 and a second modulating and reflecting cavity 206 that are sequentially communicated, where an output end of the injection cavity 204 is connected to an input end of the first modulating and reflecting cavity 205, and an output end of the second modulating and reflecting cavity 206 is connected to an input end of the slow wave extracting device, so as to implement a modulating and reflecting cavity with a secondary substructure. Wherein, the first modulating reflective cavity 205 and the second modulating reflective cavity 206 may be selected from single-gap or multi-gap cavity structures as required. In this embodiment, both the injection cavity 204 and the modulation reflection cavity are collectively referred to as an electron beam modulation structure. Since the design method of the TKA electron beam modulating structure is mature, besides the above structural examples of the present embodiment, a designer in the art can also achieve a fundamental current modulation depth of not less than 110% by various structural combinations, which will not be described in detail here. In the embodiment, the slow wave extraction device is introduced into a triaxial relativity klystron amplifier (TKA) so as to realize the promotion of the power capacity of the TKA and the locking of the frequency and the phase of microwaves output by the slow wave extraction device.
The working principle of the triaxial relativity klystron amplifier adopting the slow wave extraction device in the embodiment is as follows: when an external injection microwave signal is fed into the injection cavity 204, a coaxial TM mode is excited at a gap of the injection cavity 204, and an axial electric field of the coaxial TM mode can perform primary speed modulation on a passing electron beam; the velocity modulation of the electron beam is deepened by the first modulating reflective cavity 205 and the second modulating reflective cavity 206, realizing an electron beam modulation depth of more than 110%; the fully pre-modulated electron beam passes through the slow wave extraction device 207 to excite an alternating electric field with corresponding frequency in the cavity, and the electric field decelerates the electron beam, converts kinetic energy of the electron beam into electromagnetic energy and couples out the electromagnetic energy; the reflection cavity is used for reflecting electromagnetic energy in the slow wave extraction device 207, inhibiting electromagnetic energy in the slow wave extraction device 207 from being coupled into the TKA electron beam modulation structure, ensuring that the TKA electron beam modulation structure works independently and stably, and further ensuring that electron beams entering the slow wave extraction device 207 have stable pre-modulation frequency and pre-modulation depth; the electron beam with stable pre-modulation state will stably excite the working mode of the slow wave extraction device 207, and there is no free competition between the eigenmodes of the slow wave extraction device 207, so the embodiment adopts the triaxial relativity klystron amplifier of the slow wave extraction device to realize the output of the high-power microwave HPM with frequency and phase locking. Note that, the slow wave extraction device 207 is only used for extracting energy of the electron beam, and the electron beam is not further modulated after entering the slow wave extraction device 207.
In this embodiment, the structure-related parameters of the triaxial relativity klystron amplifier adopting the slow wave extraction device in this embodiment are as follows: the center frequency of the microwave signal of the externally injected electron beam modulation structure is 29.0 GHz, corresponding to the wavelength of the microwaveλ=10.3 mm, the structural dimensions in fig. 3 are: r1=37.8 mm, r2=42.2 mm, r3=35.8 mm, r4=45.0 mm, r5=37.0 mm, r6=43.2 mm, r7=41.6 mm, l2=2.4 mm, l4=3 mm, l5=3.2 mm, l6=1.6 mm, L1 and L3 can be optimized according to the requirements.
Fig. 4 is a graph of output microwave power and microwave spectrum of a slow wave extraction device in a triaxial klystron amplifier according to the present embodiment. Referring to fig. 4, under the conditions of 320 kV, 4 kA, 5 kW injected microwave power and 0.7T guiding magnetic field intensity, the embodiment adopts a triaxial relativity klystron amplifier of the slow wave extraction device to obtain an HPM output of 530 MW, and the corresponding gain and efficiency are respectively 50 dB and 41.4%, and the output microwave power saturation time is about 30 ns; the output microwave frequency of the triaxial relativity klystron amplifier adopting the slow wave extraction device is stabilized at 29.0 GHz, which proves that the triaxial relativity klystron amplifier adopting the slow wave extraction device can realize the output of high-power microwave HPM with stable frequency.
Fig. 5 is a graph showing the phase time variation of the output microwave of the slow wave extraction device according to the present embodiment. Referring to fig. 5, after the output microwave power is saturated (after 30 ns), the phase of the output microwave of the triaxial relativity klystron amplifier adopting the slow wave extraction device in this embodiment is stable, which proves that the slow wave extraction device adopting the triaxial relativity klystron amplifier adopting the slow wave extraction device in this embodiment can realize the output of high-power microwave HPM with stable phase.
Referring to fig. 4 and 5, it can be seen that the triaxial relativity klystron amplifier of the slow wave extraction device can realize the output of the high-power microwave HPM with dual stable frequency and phase; the triaxial relativity klystron amplifier adopting the slow wave extraction device in the embodiment has the advantages that the deep clustered electron beam excitation slow wave structure obtained by adopting the triaxial relativity klystron amplifier electron beam modulation structure for pre-modulation can realize HPM output with stable frequency and phase under the condition that the slow wave structure is ensured to realize high-efficiency beam-wave energy conversion, and the problem that the microwave phase output by the slow wave structure in the HPM oscillator is difficult to control is solved.
Fig. 6 is a fundamental current distribution curve of a triaxial relativity klystron amplifier using a slow wave extraction device according to the present embodiment. As can be seen from fig. 6, in the present embodiment, the fundamental modulation current peak value of the triaxial relativity klystron amplifier using the slow wave extraction device is 4.6 kA, and the corresponding fundamental modulation depth is 115%; in the embodiment, the fundamental wave modulation current of the triaxial relativity klystron amplifier adopting the slow wave extraction device starts to fall when entering the first period of the slow wave extraction device 207 and slightly rises when leaving the last period of the slow wave structure 306, so that the slow wave extraction device 207 realizes higher beam-wave energy conversion efficiency; it is noted that the slow wave extraction device 207 is only used for extracting energy of the electron beam, the electron beam is not further modulated after entering the slow wave extraction device 207, and the fundamental modulation current is not further increased after entering the slow wave structure 306.
In summary, aiming at the problems that the power capacity of a standing wave extraction cavity of a triaxial relativity klystron amplifier (TKA device) is low and the output microwave frequency and phase of a slow wave extraction device in a Cerenkov oscillator are difficult to lock, the slow wave extraction device is introduced into the triaxial relativity klystron amplifier, so that the triaxial relativity klystron amplifier adopting the slow wave extraction device is realized, the power capacity of the triaxial relativity klystron amplifier is improved, the electron beam excitation slow wave extraction device which is fully clustered after being modulated by an electron beam modulation structure is adopted, the working mode of the electron beam excitation slow wave extraction device with fixed pre-modulation frequency (electron beam with the fundamental wave current modulation depth of not less than 110%) is adopted, the free competition stage is skipped, and finally the HPM output of frequency locking and phase locking is realized, thereby overcoming the problem that the output microwave frequency and phase of the slow wave structure eigenmode are difficult to lock caused by free competition, and providing an optional microwave source device for coherent synthesis of high-frequency high-power microwave HPM.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above examples, and all technical solutions belonging to the concept of the present invention belong to the protection scope of the present invention. It should be noted that modifications and adaptations to the present invention may occur to one skilled in the art without departing from the principles of the present invention and are intended to be within the scope of the present invention.

Claims (10)

1. A triaxial relativity klystron amplifier employing a slow wave extraction device, comprising:
an electron beam emission structure for generating a strong current relativistic electron beam;
the electron beam modulation structure is used for modulating and bunching the electron beams in the strong current relativity theory and realizing the modulation depth of fundamental current not less than 110%;
a slow wave extraction device (207) for converting the kinetic energy of the electron beams after sufficient bunching into microwave energy and coupling out;
the output end of the electron beam emission structure is connected with the input end of the electron beam modulation structure, and the output end of the electron beam modulation structure is connected with the input end of the slow wave extraction device (207), so that the electron beam modulation structure and the slow wave extraction device (207) are combined to overcome the problem that the output microwave frequency and the phase are difficult to lock due to free competition of the eigenmodes of the slow wave structure, and the power capacity of the triaxial relativity klystron amplifier is improved.
2. The triaxial relativity klystron amplifier adopting a slow wave extraction device according to claim 1, characterized in that the slow wave extraction device (207) comprises an inner conductor (301) and an outer conductor (302) sleeved outside the inner conductor (301), a circular cavity is formed between the inner conductor (301) and the outer conductor (302), the circular cavity is composed of a drift connection channel (303), a reflection cavity (304) and an output waveguide (305) which are sequentially communicated, the inner wall of the output waveguide (305) is smooth to form a smooth waveguide structure, a slow wave structure (306) is arranged on the outer wall of the output waveguide (305), and the slow wave extraction device (207) is rotationally symmetrical about the central axis of the inner conductor (301).
3. The triaxial klystron amplifier using slow wave extraction device according to claim 2, characterized in that the reflective cavity (304) is formed by a circular groove opening on the outer wall of the inner conductor (301), a circular groove opening on the inner wall of the outer conductor (302) and a circular cavity portion between the two circular grooves.
4. A triaxial relativity klystron amplifier using a slow wave extraction device according to claim 3, characterized in that the slow wave structure (306) is a periodic corrugated structure provided on the inner wall of the outer conductor (302), a single periodic part of the periodic corrugated structure being one or a combination of two or more of rectangular, trapezoidal, cosine curved, irregular shape.
5. A triaxial klystron amplifier using a slow wave extraction device according to claim 4, characterised in that the inner conductor (301) is cylindrical and the outer conductor (302) is of tubular construction.
6. Triaxial klystron amplifier with slow wave extraction device according to claim 2, characterized in that the radius difference R2-R1 between the inner radius R1, the outer radius R2 of the drift connection channel (303) is smaller than half wavelength of the microwave signal of the external injection electron beam modulation structure.
7. The triaxial klystron amplifier using slow wave extraction device according to claim 6, characterized in that the inner radius R3 and the outer radius R4 of the reflective cavity (304) satisfy R3< R1, R4> R2, where R1 is the inner radius of the drift connection channel (303) and R2 is the outer radius of the drift connection channel (303).
8. The triaxial klystron amplifier using slow wave extraction device according to claim 7, characterised in that the inner radius R5 and the outer radius R6 of the output waveguide (305) satisfy R3< R5, R4> R6, where R3 is the inner radius of the reflective cavity (304) and R4 is the outer radius of the reflective cavity (304).
9. The triaxial klystron amplifier using slow wave extraction device according to claim 1, wherein the electron beam modulating structure comprises: an injection cavity (204) for effecting absorption of an externally injected microwave signal and preliminary modulation of the electron beam; a modulation reflection cavity for further modulating the electron beam to generate an electron beam having a fundamental current modulation depth of not less than 110%; the input ends of the injection cavity (204), the modulation reflection cavity and the slow wave extraction device (207) are connected in sequence.
10. The triaxial relativity klystron amplifier using a slow wave extraction device according to claim 9, characterized in that the modulating and reflecting cavities comprise a first modulating and reflecting cavity (205) and a second modulating and reflecting cavity (206) which are communicated in sequence, the output end of the injecting cavity (204) is connected with the input end of the first modulating and reflecting cavity (205), and the output end of the second modulating and reflecting cavity (206) is connected with the input end of the slow wave extraction device (207).
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