CN111916323B - Over-mode dual-band expansion interaction oscillator based on three-dimensional metal grid - Google Patents
Over-mode dual-band expansion interaction oscillator based on three-dimensional metal grid Download PDFInfo
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- CN111916323B CN111916323B CN202010849760.5A CN202010849760A CN111916323B CN 111916323 B CN111916323 B CN 111916323B CN 202010849760 A CN202010849760 A CN 202010849760A CN 111916323 B CN111916323 B CN 111916323B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/16—Circuit elements, having distributed capacitance and inductance, structurally associated with the tube and interacting with the discharge
- H01J23/18—Resonators
- H01J23/20—Cavity resonators; Adjustment or tuning thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
- H01J25/02—Tubes with electron stream modulated in velocity or density in a modulator zone and thereafter giving up energy in an inducing zone, the zones being associated with one or more resonators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2223/00—Details of transit-time tubes of the types covered by group H01J2225/00
- H01J2223/16—Circuit elements, having distributed capacitance and inductance, structurally associated with the tube and interacting with the discharge
- H01J2223/18—Resonators
- H01J2223/20—Cavity resonators; Adjustment or tuning thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2225/00—Transit-time tubes, e.g. Klystrons, travelling-wave tubes, magnetrons
- H01J2225/02—Tubes with electron stream modulated in velocity or density in a modulator zone and thereafter giving up energy in an inducing zone, the zones being associated with one or more resonators
Abstract
The invention provides an overmould dual-band expansion interaction oscillator based on a three-dimensional metal grid, and belongs to the field of vacuum electronic devices. The oscillator is based on the mode selection characteristic of a waveguide loaded three-dimensional metal grid, and the specific three-dimensional metal grid structure is designed, so that the expanded interaction oscillator can have the advantages of over-mode and dual-frequency operation at the same time, and the electrical large size is realized in a high-frequency band, so that the power capacity of a device is increased, and the processing and the assembly are easy; and because of the centralized interaction in the longitudinal direction, the longitudinal length of the magnetic field focusing device is shorter, which is beneficial to reducing the volume of a focusing magnetic field, thereby enabling the whole structure to be more compact.
Description
Technical Field
The invention belongs to the field of vacuum electronic devices, and particularly relates to an extended interaction oscillator with dual-frequency working and over-mode characteristics.
Background
With the continuous development and progress of society, the requirements of people on electronic information technology are continuously improved. In the field of electric vacuum devices, a new generation of microwave vacuum electronic devices is further developed toward high frequency, high power, high efficiency, multi-band, and compact type. Among the many vacuum electronic devices, oscillators are an important class of microwave source devices. The backward wave oscillator is a vacuum electronic device based on a Cerenkov radiation mechanism, and generates electromagnetic waves by utilizing the synchronization of backward waves and electron beams in a slow wave structure, wherein the backward waves are still traveling waves in nature; the high-frequency field generated by the resonant cavity structure of the extended interaction oscillator interacts with the electron beam under the excitation of the electron beam, so that the generation of signals, namely transit radiation, can be regarded as the perturbation of a standing wave field to the electron beam, and the essence of the standing wave is standing wave. Conventional klystrons and extended interaction oscillators are vacuum electronics based on a transit-time radiation mechanism. Based on the size sharing effect, the size of the microwave vacuum electronic device is remarkably increased along with the increase of the working wavelength (the transverse size of the traditional vacuum electronic device is about lambda/3-lambda, wherein lambda is the free space wavelength corresponding to the working frequency); and the standing wave device has stronger interaction electric field compared with the conventional traveling wave device, so that the vacuum electronic device with the cavity structure as a high-frequency structure has higher power capacity and shorter interaction length.
As the frequency increases, the size of conventional vacuum electronics decreases accordingly. In particular, the reduction of the electron beam channel results in a significant reduction in the electron beam current, which limits the power capability of high-band vacuum electronic devices. The power capacity of the device can be fundamentally improved by designing a new high-frequency structure, particularly a high-frequency structure capable of bearing high electron beam voltage and current. In addition, under the condition of a certain electron beam current and filling ratio, the emission current density of the cathode can be reduced by designing a large electron beam channel radius, so that the service life of the device is prolonged. Therefore, designing a high-frequency structure of an electrical large size at a high-frequency band is advantageous for increasing the power capacity of the device while also extending the lifetime of the device. Conventional over-mold structures provide a good idea in increasing the device interaction size to increase its power capability. For example, the coaxial structure-based over-mode oscillator increases the cross-sectional areas of the electron beam and the electron beam channel, can significantly increase the power capacity of the device, but has a complex structure and difficult processing and assembly, and the concentricity of the coaxial inner and outer conductor structures has a large influence on the device, so that the performance of the device is difficult to ensure.
In addition, the traditional oscillator is mainly focused on single frequency output as an important microwave source, and provides a local oscillator signal for the frequency mixer and a continuous signal source for the radar system in the field of modern wireless communication. Particularly, with the rapid development of science and technology, the performance requirements of communication systems, electronic warfare and the like on radar systems are continuously increasing. Compared with the traditional single-frequency signal source, the dual-frequency microwave source has the advantages of easiness in integration, low cost, easiness in operation and the like, and can meet wider application requirements. The dual-frequency microwave source can realize continuous and independent output of two signals and provide signal sources for the dual-frequency radar in different modes. Further, as communication and radar systems are gradually developed to higher frequencies, the size of the devices is significantly reduced, the fabrication and assembly are difficult, and the low power capacity is problematic, so that the structure of the microwave source system operating in dual frequency or multiple frequency bands is more complicated.
Disclosure of Invention
In view of the problems in the background art, the invention aims to provide an over-mode dual-band extension interaction oscillator based on a three-dimensional metal grid. Based on the overmoulding characteristic of the waveguide filled three-dimensional metal grid and the mode selection characteristic embodied by the specific boundary condition of the metal grid, the expansion interaction oscillator can have the advantages of overmoulding and double-frequency operation at the same time, the large electric size is realized in a high-frequency band, and the longitudinal length is shorter due to centralized interaction in the longitudinal direction, so that the volume of a focusing magnetic field is favorably reduced, and the integral structure is more compact.
In order to achieve the purpose, the technical scheme of the invention is as follows:
an overmould dual-band expansion interaction oscillator based on a three-dimensional metal grid comprises a rectangular resonant cavity, an electron beam channel, the three-dimensional metal grid and an output device, and is characterized in that the three-dimensional metal grid is arranged in the rectangular resonant cavity; defining the transmission direction of the electron beam as a z direction, wherein the three-dimensional metal grid is a three-dimensional stereo grating formed by periodically and parallelly arranging metal grids along the z direction, and the metal grid is formed by m multiplied by k square grids on a plane vertical to the z direction; the electron beam channel penetrates through the three-dimensional metal grid, and the grid with the hollow middle part is used for transmitting electron beams; the output device is arranged at the center of the side face of the rectangular resonant cavity parallel to the z direction and used for outputting electromagnetic wave signals generated after the interaction between the electron beams and the three-dimensional metal grid.
Furthermore, the number of the periods of the metal gates which are periodically and parallelly arranged along the z direction is n, wherein n is greater than 3, m is greater than or equal to 3, k is greater than or equal to 3, n is greater than m, and n is greater than k.
Furthermore, the side length of each square grid is called as the lattice length, and is a 0 The width and the thickness of the metal edge of each square grid are d, wherein d<0.2a 0 (ii) a Each square grid structure is regarded as a strongly coupled microwave cavity.
Further, the three-dimensional metal grid is linear, aerial ladder-shaped or grid-shaped on a yoz plane; the three-dimensional metal gates are linear on a yoz plane, namely the metal gates are parallel to each other and are arranged at equal intervals, and the interval is a period p; the three-dimensional metal grid is in an aerial ladder shape on a yoz plane, namely the metal grid has width in the z direction to form grids, adjacent grids are parallel to each other and are equidistant, and the grid width and the spacing are both in a period p; the three-dimensional metal grid is in a grid shape on a yoz plane, namely the metal grid has width in the z direction to form a plane grid, adjacent grids are connected with each other, the grid width is a period p, wherein p<a 0 。
Furthermore, the electron beam is generated by an electron gun and enters from one end of the rectangular resonant cavity, and a single electron beam or a plurality of electron beams penetrate through the three-dimensional metal grid through the electron beam channel and then penetrate out from the other end of the rectangular resonant cavity to enter the collector.
Furthermore, the electron beam channel is a circular electron beam channel, and the diameter of each electron beam is smaller than the lattice length a of the three-dimensional metal gate 0 ；
Furthermore, the output device comprises a gradual change coupling port on the rectangular resonant cavity and a standard rectangular waveguide connected with the gradual change coupling port, and the length of the gradual change coupling port along the propagation direction of the electron beam is an integral multiple of the period p of the metal grid.
Furthermore, the coupling structure of the output device is one, or two coupling structures are symmetrically arranged, or four coupling ports are symmetrically arranged on the side face of the rectangular resonant cavity under the high-power condition.
The working principle of the invention is as follows:
a three-dimensional metal grid is filled in the rectangular resonant cavity to serve as an extended interaction resonant cavity, when an electron beam passes through the three-dimensional metal grid in the cavity, induced high-frequency current can appear in a metal grid structure, and a high-frequency field meeting specific boundary conditions is established; while the metal gate structure enables only specific modes to exist. The fine structural design enables a plurality of TM modes to be arranged in the cavity, and a strong axial electric field is provided, so that interaction with electron beams can be achieved. Under the condition of selecting a proper electron beam voltage, the electron beam interacts with a standing wave field in the extended interaction resonant cavity, so that the electron beam has speed modulation and clustering in the metal gate structure; the high-frequency field excited by the clustered electrons in the metal grid modulates the electron beam, so that the energy of the electron beam is converted into microwave energy and then is output from a coupling port on the side surface of the cavity. Because the rectangular resonant cavity is filled with the over-mode characteristic of the three-dimensional metal grid and has a plurality of TM modes, the rectangular resonant cavity can interact with the electron beam to exchange energy, and therefore the expanded interaction oscillator can achieve over-mode double-frequency work.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. according to the invention, the three-dimensional metal grid is innovatively filled in the rectangular resonant cavity, and the extension interaction oscillator is constructed by designing three different three-dimensional metal grids to fill the resonant cavity, so that the oscillator has an over-mode characteristic, the over-mode characteristic increases the structural size in the cavity, and the problems of small structural size and low power capacity of a conventional device in a high-frequency section due to a size sharing effect can be well solved.
2. The oscillator provided by the invention can generate two output powers under different frequencies, for example, two microwave outputs with different power levels are generated near 12.7GHz and 13.7GHz, and the two microwave outputs are respectively 11.3kW and 3.6MW.
3. The three-dimensional metal grid is of an all-metal hollow structure, so that heat dissipation is facilitated; the three-dimensional metal grid and the oscillator have simple structures of all parts, compact integral structure and easy processing and assembly, and are the overmould dual-band microwave source with great application value.
Drawings
FIG. 1 is a schematic structural diagram of three types of three-dimensional metal gates;
wherein 1-1 is a schematic diagram of a square metal gate structure; 1-2 is a schematic diagram of a double-layer metal gate structure; 1-3 is a schematic diagram of a cubic metal gate structure.
FIG. 2 is a schematic diagram of an extended interaction oscillator for over-mode dual-frequency operation according to the present invention;
wherein, (a) is a schematic diagram of the oscillator, and (b) is a cross-sectional diagram; the front view of the output device is shown in (c) and the side view is shown in (d).
Fig. 3 is an electric field diagram (left) in the yoz plane and a magnetic field diagram (right) in the yox plane for different TM modes of the oscillator of the present invention;
wherein (a) the corresponding frequency is 12.3GHz; (b) the corresponding frequency is 12.7GHz; (c) corresponds to a frequency of 13.7GHz.
Fig. 4 is a graph of the average output power of mode 1 oscillator of the present invention.
Fig. 5 is a frequency spectrum diagram corresponding to the output signal of the oscillator in the working mode 1 according to the present invention.
Fig. 6 is a graph of average output power and frequency for different electron beam voltages for mode 1 oscillator of the present invention.
Fig. 7 is a graph of the average output power of mode 2 oscillator of the present invention.
Fig. 8 is a spectrum diagram of an output signal of the oscillator in the operating mode 2 according to the present invention.
Fig. 9 is a graph of the average output power and corresponding frequency for different electron beam voltages for mode 2 oscillator operation of the present invention.
The reference numbers illustrate:
1: electron beam, 2: x-band standard waveguide, 3: gradual change coupling port, 4: rectangular metal resonator, 5: electron beam channel, 6: gradual coupling port (same as 3), 7: x-band standard waveguide (same as 2), 8: and (3) a three-dimensional metal grid.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the embodiments and the accompanying drawings.
An over-mode dual-band expansion interaction oscillator based on a three-dimensional metal grid comprises a rectangular resonant cavity, an electron beam channel, a three-dimensional metal grid and a dual-port output device, and is characterized in that the three-dimensional metal grid is arranged in the rectangular resonant cavity, and the three-dimensional metal grid is a metal grid (in the embodiment, a 5 x 5 square grid is adopted) formed by m x k square grids on an xoy plane. Defining the transmission direction of the electron beam as the z direction, and the length a of the square grid in the metal grating 0 The thickness d =1mm, and the three-dimensional metal grating is periodically and parallelly arranged along the z direction to form a three-dimensional stereo grating; the electron beam adopts a single electron beam, and the channel is arranged at a hollow part in the middle of the three-dimensional metal grid and is used for transmitting the electron beam; the output device adopts a double-port coupling device, is symmetrically arranged at the center of the side surface of the rectangular resonant cavity parallel to the transmission direction of the electron beam, and is used for outputting electromagnetic wave signals generated after the interaction between the electron beam and the metal grid structure.
Fig. 1 is a schematic view of three types of three-dimensional metal gates designed by the present invention, wherein fig. 1-1 is a schematic view of a square metal gate structure, that is, the three-dimensional metal gates are linear in the yoz plane, the metal gates are arranged in parallel and at equal intervals, the interval is a period p =5.5mm, and the period number n is 8; fig. 1-2 is a schematic view of a double-layer metal gate structure, the three-dimensional metal gate is in a shape of an aerial ladder on a yoz plane, that is, the metal gate has a width in the z direction to form grids, adjacent grids are parallel and equidistant to each other, the grid width and the spacing are both in a period p =5.5mm, and the cycle number n is 7; fig. 1-3 are schematic diagrams of cubic metal gate structures, where the three-dimensional metal gate is in a grid shape on the yoz plane, that is, the metal gate has a width in the z direction to form a planar grid, and adjacent grids are connected to each other, where the grid width is p =5.5mm, and the cycle number n is 7.
In practical application, the number n of the periods of different types of metal gates can be adjusted according to different design targets.
FIG. 2 shows the present inventionThe schematic diagram of the extended interaction oscillator for over-mode dual-frequency operation is that a rectangular resonant cavity is filled with a three-dimensional metal grid as shown in fig. 1-3, wherein (a) is the schematic diagram of the oscillator, and (b) is the cross-sectional diagram of the oscillator. Radius r of electron beam in FIG. 2 (b) a =4mm, radius r of electron beam passage b =4.5mm; FIGS. 2 (c) and 2 (d) further show the parameters of the tapered coupling structure in the oscillator, where 2 is the standard waveguide in the X-band, 3 is the tapered coupling port, the rectangle between 3 and 4 is the transition section of the coupler connected with the rectangular resonant cavity, and the parameter is w a ＝19.05mm，w b ＝9.52mm，h 1 =6mm; the parameter of the gradual change coupling port is h 2 ＝5mm，c a ＝31mm，c b =19mm, t=3mm; wherein the width c of the coupling port in the x-direction a And a width c in the z direction b Should be greater than or equal to an integral multiple of the period p.
Under the structural parameters, the working dual-frequency bands of the extended interaction oscillator are respectively about 12.3GHz and 13.7GHz, and the dimension of the extended interaction oscillator on the xoy plane is 50mm multiplied by 50mm (the length and the width are both 5 multiplied by a) 0 ) I.e. a lateral dimension exceeding 2 times the operating wavelength (the lateral dimension of a conventional device is about 0.5 times the operating wavelength), i.e. the extended interaction oscillator has an over-mode characteristic; further, the ratio of the electron beam diameter to the free space wavelength corresponding to the operating frequency is 2r a The fact that the conventional vacuum electronic device is smaller than 1/10 substantially indicates that the extended interaction oscillator has a large cathode emission area, so that the cathode emission current density of the electron gun can be greatly reduced, thereby prolonging the service life of the device.
FIG. 3 is a graph of the electric and magnetic field distributions of several exemplary TM modes of the oscillator of the present invention; wherein FIG. 3 (a) corresponds to a frequency of 12.3GHz; FIG. 3 (b) corresponds to a frequency of 12.7GHz; the frequency of fig. 3 (c) is 13.7GHz, the left graph is the electric field graph of yoz plane, and the right graph is the magnetic field graph of yox plane. It can be seen from the figure that the cavity has a strong axial electric field in these modes, which is beneficial for the electron beam to exchange energy with the standing wave field.
Fig. 4 is a graph of the average output power of the oscillator of the present invention in mode 1, where the operating conditions of mode 1 are: the voltage and the current of the electron beam are respectively 70kV and 100A, the axial focusing magnetic field is 0.2T, the obtained output power is 11.3kW, the output power is stable around 80ns, and the output signals of the wave port 1 and the wave port 2 are completely consistent. Fig. 5 is a graph of a fourier transform spectrum corresponding to the output signal of operating mode 1, with a central operating frequency of about 12.3GHz. Fig. 6 shows the corresponding output power and frequency for different electron beam voltages in operating mode 1, where the frequency ranges from 12.314GHz to 12.356GHz and the corresponding output power ranges from 2.8kW to 11.3kW.
FIG. 7 is a graph of the average output power of mode 2 oscillator of the present invention; the operating conditions of mode 2 are: the electron beam voltage and current were 150kV and 160A, respectively, and the axial focusing magnetic field was 0.2T, and it was found that the output signal was stably output at 3.6MW after 70 ns. Fig. 8 is a diagram of a fourier transform spectrum corresponding to the output signal of the operating mode 2, and it can be seen that the central operating frequency is about 13.75GHz and there are no clutter signals in the spectrum. Fig. 9 shows the output power and frequency for different electron beam voltages in operating mode 2, where the tuning frequency is from 13.7GHz to 13.756GHz, and the corresponding output power is from 0.95MW to 3.6MW.
In summary, the invention provides an over-mode dual-band extension interaction oscillator based on a three-dimensional metal grid, and the high-frequency structure of the oscillator is that the three-dimensional metal grid is filled in a rectangular resonant cavity. According to the invention, through designing the scheme that the three-dimensional metal gate is filled in the resonant cavity, the oscillator has the over-mode characteristic in performance and can generate two output powers under different powers; the structure is compact, the structure size is increased due to the overmoulding characteristic, and the interior of the structure is of a hollow structure, so that the heat dissipation is facilitated; the three-dimensional metal grid and each part of the oscillator have simple structures and are easy to process, and the microwave source is an overmould double-frequency microwave source with great application value.
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.
Claims (6)
1. The over-mode dual-band expansion interaction oscillator based on the three-dimensional metal grid comprises a rectangular resonant cavity, an electron beam channel, the three-dimensional metal grid and an output device, and is characterized in that the three-dimensional metal grid is arranged in the rectangular resonant cavity, the three-dimensional metal grid is a three-dimensional stereo grating formed by periodically and parallelly arranging the metal grids along the z direction, the three-dimensional metal grid is formed by m multiplied by k square grids on a plane vertical to the z direction, and the side length of each square grid is a 0 The width and thickness of the grid are both d, wherein d<0.2a 0 (ii) a The electron beam channel penetrates through the three-dimensional metal grid and is used for transmitting electron beams; the output device is arranged at the center of the side face of the rectangular resonant cavity parallel to the z direction and used for outputting electromagnetic wave signals generated after the interaction between the electron beams and the three-dimensional metal grid; defining the transmission direction of the electron beam as a z direction; the metal grid has n periods which are periodically and parallelly arranged along the z direction, wherein n is>3. m is more than or equal to 3, k is more than or equal to 3 and n>m、n>k; the transverse dimension of the over-mode dual-band extended interaction oscillator exceeds 2 times the operating wavelength.
2. The overmoded dual band extended interaction oscillator of claim 1, wherein the three dimensional metal grid is linear, a cloud ladder, or a grid in the yoz plane; the three-dimensional metal grids are linear on the yoz plane, namely the metal grids are parallel to each other and are arranged at equal intervals, and the period of the intervals is p; the three-dimensional metal grid is in an aerial ladder shape on a yoz plane, namely the metal grid has a width in the z direction to form grids, adjacent grids are parallel to each other and are at equal intervals, and the grid width and the interval are both in a period p; the three-dimensional metal grid is in a grid shape on a yoz plane, namely the metal grid has width in the z direction to form a plane grid, adjacent grids are connected with each other, the grid width is p, wherein p<a 0 。
3. The multimode, dual band spreading interaction oscillator of claim 1 wherein the electron beam is generated by an electron gun and enters from one end of the rectangular cavity, and the single electron beam or multiple electron beams pass through the three-dimensional metal grid via the electron beam channel and exit from the other end of the rectangular cavity into the collector.
4. The overmoded dual band expansion interaction oscillator of claim 1, wherein the electron beam channels are circular electron beam channels, and each electron beam has a diameter less than the lattice length a of the three dimensional metal grid 0 。
5. The multimode, dual band expansion interaction oscillator of claim 1, wherein the output means comprises a tapered coupling port on the rectangular cavity and a standard rectangular waveguide connected to the tapered coupling port, and the length of the tapered coupling port along the propagation direction of the electron beam is an integer multiple of the period p.
6. The multimode, dual band spread interaction oscillator of claim 1, wherein the output means is one, or two, symmetrical or symmetrical with four coupled ports at high power.
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