CN110718426A - High-frequency high-power microwave device - Google Patents
High-frequency high-power microwave device Download PDFInfo
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- CN110718426A CN110718426A CN201910923406.XA CN201910923406A CN110718426A CN 110718426 A CN110718426 A CN 110718426A CN 201910923406 A CN201910923406 A CN 201910923406A CN 110718426 A CN110718426 A CN 110718426A
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Abstract
The invention discloses a high-frequency high-power microwave device, which comprises a circular waveguide sleeve and an inner conductor coaxial with the circular waveguide sleeve, wherein an electron beam transmission channel with the inner diameter of 8mm and the outer diameter of 14.6mm is formed between the inner conductor and the circular waveguide sleeve; the high-frequency structure is sequentially provided with a coaxial reflecting area, a beam pre-modulation area, a phase modulation area and a beam wave conversion area along the transmission direction of an electron beam; a collector which is radially inwards protruded and annular is arranged behind the beam wave conversion area; the circular waveguide sleeve is provided with a reflection cavity in the shape of a ring groove, a beam pre-modulation cavity, a phase modulation cavity and a beam conversion cavity; the annular electron beam with the inner diameter of 12mm, the outer diameter of 12.6mm, the voltage of 400kV and the beam intensity of 7.3kA is transmitted in a high-frequency structure under the guidance of an axial magnetic field with the magnetic field intensity of 1.5T to generate high-frequency high-power microwaves with the frequency of 67.4 GHz. The high-frequency high-power microwave device has the advantages of simple structure size, miniaturization, light weight and easiness in assembly.
Description
Technical Field
The invention relates to a high-frequency high-power microwave device, and belongs to the technical field of high-power microwave devices.
Background
The high-power microwave generally refers to electromagnetic waves with peak power of more than 100MW and working frequency of 1-300 GHz. With the research and application requirements of high-power microwave technology, high-power microwave sources gradually develop to high-frequency structures.
The axial O-shaped high-power microwave device is a high-power microwave device with wider application due to the easy guidance of electron beams and the changeable combination of the structure. The increase in device frequency dramatically reduces the radial size of the device, causing a reduction in power capability. This physical mechanism is a key issue that must be addressed for high frequency, high power microwave devices. In a high-frequency range, the radial size of the device is enlarged by adopting a coaxial structure, so that the power capacity of the device is improved.
Disclosure of Invention
The invention aims to: in view of the above problems, the present invention provides a high frequency high power microwave device capable of generating high frequency high power microwave.
The technical scheme adopted by the invention is as follows:
a high-frequency high-power microwave device comprises a circular waveguide sleeve and an inner conductor coaxial with the circular waveguide sleeve, wherein a high-frequency structure is arranged in the circular waveguide sleeve;
an electron beam transmission channel with the inner diameter of 8mm and the outer diameter of 14.6mm is formed between the inner conductor and the circular waveguide sleeve;
the high-frequency structure is sequentially provided with a coaxial reflecting area, a beam pre-modulation area, a phase modulation area and a beam wave conversion area along the transmission direction of the electron beam;
a collector which is radially inwards protruded and annular is arranged behind the beam wave conversion area;
the reflection area, the beam pre-modulation area, the phase modulation area and the beam conversion area are respectively provided with a reflection cavity, a beam pre-modulation cavity, a phase modulation cavity and a beam conversion cavity in the shape of a ring groove on the circular waveguide sleeve;
the annular electron beam with the inner diameter of 12mm, the outer diameter of 12.6mm, the voltage of 400kV and the beam intensity of 7.3kA is transmitted in a high-frequency structure under the guidance of an axial magnetic field with the magnetic field intensity of 1.5T to generate high-frequency high-power microwaves with the frequency of 67.4 GHz.
In the scheme, two ends of a circular waveguide sleeve are closed, the interior of the circular waveguide sleeve is vacuumized to a millipascal level, a cathode for emitting annular electron beams is arranged at one end in the circular waveguide sleeve, an inner conductor is connected with the other end, opposite to the circular waveguide sleeve, of the circular waveguide sleeve, the annular electron beams are transmitted in a transmission channel and hit a collecting electrode after passing through a high-frequency structure.
The reflecting area can intercept the reverse energy in the transmission process of the electron beam, so that the energy of the electron beam entering the beam-wave conversion area is improved; the beam current and the modulation area can modulate the phase and the phase speed of the electron beam in advance to enable the phase speed of the electron beam to be close to that of the microwave; the phase modulation area can further modulate the phases of the electron beams and the microwaves, so that the phases of the electron beams and the microwaves are consistent; the electron beams and the microwaves with the same phases can generate energy conversion in a beam-wave conversion area, so that high-frequency and high-power microwaves are generated; the collector can directly absorb the residual energy of the electron beam, and prevent the electron beam from bombarding to generate secondary electron emission and plasma, thereby influencing microwave output.
Preferably, the reflection cavity, the beam premodulation cavity, the phase modulation cavity and the beam conversion cavity are all annular cavities with rectangular sections.
Preferably, the reflective cavity has an outer diameter of 17.6mm and an axial length of 1 mm.
Preferably, the beam pre-modulation area comprises a first beam pre-modulation cavity and a second beam pre-modulation cavity which are the same in size, the outer diameter of the first beam pre-modulation cavity and the outer diameter of the second beam pre-modulation cavity are 16.6mm, the axial length of the first beam pre-modulation cavity and the axial length of the second beam pre-modulation cavity are 0.9mm, and the interval between the two beam pre-modulation cavities is 0.8 mm.
Preferably, the outer diameter of the phase modulation cavity is 19.6mm, the axial length is 0.9mm, and the space between the phase modulation cavity and the second beam premodulation cavity is 0.8 mm.
Preferably, the beam wave conversion area comprises a first beam wave conversion cavity, a second beam wave conversion cavity and a third beam wave conversion cavity which are the same in size, the outer diameters of the first beam wave conversion cavity, the second beam wave conversion cavity and the third beam wave conversion cavity are all 16.6mm, the axial lengths of the first beam wave conversion cavity, the second beam wave conversion cavity and the third beam wave conversion cavity are all 0.9mm, and the interval between two adjacent beam wave conversion cavities is all 0.8 mm.
In the above scheme, the outer diameters of the reflection cavity, the beam premodulation cavity, the phase modulation cavity and the beam conversion cavity refer to the diameter of the bottom circle of the cavity.
The high-frequency high-power microwave device can improve the energy of an electron beam entering a beam-wave conversion region, and modulate the phase and the phase speed of the annular electron beam to enable the phase speed of the annular electron beam to be consistent with that of the microwave, so that high-frequency high-power microwave is generated; and can also prevent electron secondary emission and plasma generated by electron beam bombardment, thereby influencing microwave output.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that: the coaxial structure design is adopted, the axial size and the radial size are very compact, and compared with a device in the same frequency band, the coaxial structure design has the advantages of concise structure size, miniaturization, light weight and easiness in assembly.
Drawings
The invention will now be described, by way of example, with reference to the accompanying drawings, in which:
fig. 1 is a schematic cross-sectional structure of a microwave device.
The labels in the figure are: the device comprises a 1-reflection region, a 2-beam pre-modulation region, a 3-phase modulation region, a 4-beam conversion region, a 5-collector, a 6-annular electron beam, a 7-electron beam transmission channel, an 8-circular waveguide sleeve, a 9-inner conduit, a 11-reflection cavity, a 21-first beam pre-modulation cavity, a 22-second beam pre-modulation cavity, a 31-phase modulation cavity, a 41-first beam conversion cavity, a 42-second beam conversion cavity and a 43-third beam conversion cavity.
Detailed Description
All of the features disclosed in this specification, or all of the steps in any method or process so disclosed, may be combined in any combination, except combinations of features and/or steps that are mutually exclusive.
Any feature disclosed in this specification may be replaced by alternative features serving equivalent or similar purposes, unless expressly stated otherwise. That is, unless expressly stated otherwise, each feature is only an example of a generic series of equivalent or similar features.
Example 1
As shown in fig. 1, the high-frequency high-power microwave device of this embodiment includes a circular waveguide sleeve and an inner conductor coaxial with the circular waveguide sleeve, both ends of the circular waveguide sleeve are closed, the inside is evacuated to millipascal level, a cathode for emitting an annular electron beam is disposed at one end of the circular waveguide sleeve, the inner diameter of the circular waveguide sleeve is 14.6mm, and the diameter of the inner conductor is 8 mm.
A coaxial reflecting area, a beam pre-modulation area, a phase modulation area and a beam wave conversion area are sequentially arranged along the transmission direction of the electron beam; the reflection area, the beam pre-modulation area, the phase modulation area and the beam conversion area are respectively provided with an annular groove-shaped reflection cavity, a beam pre-modulation cavity, a phase modulation cavity and a beam conversion cavity, wherein the sections of the annular groove-shaped reflection cavity, the beam pre-modulation cavity, the phase modulation cavity and the beam conversion cavity are rectangular.
The outer diameter of a reflecting cavity of the reflecting area is 17.6mm, and the axial length is 1 mm; the beam pre-modulation area comprises a first beam pre-modulation cavity and a second beam pre-modulation cavity which are the same in size, the outer diameter of the first beam pre-modulation cavity and the outer diameter of the second beam pre-modulation cavity are 16.6mm, the axial length of the first beam pre-modulation cavity and the axial length of the second beam pre-modulation cavity are 0.9mm, and the interval between the two beam pre-modulation cavities is 0.8 mm; the outer diameter of the phase modulation cavity is 19.6mm, the axial length of the phase modulation cavity is 0.9mm, and the interval between the phase modulation cavity and the second beam premodulation cavity is 0.8 mm; the beam wave conversion area comprises a first beam wave conversion cavity, a second beam wave conversion cavity and a third beam wave conversion cavity which are the same in size, the outer diameters of the first beam wave conversion cavity, the second beam wave conversion cavity and the third beam wave conversion cavity are 16.6mm, the axial lengths of the first beam wave conversion cavity, the second beam wave conversion cavity and the third beam wave conversion cavity are 0.9mm, and the interval between every two adjacent beam wave conversion cavities is 0.8 mm.
And a collector which is radially inwards protruded to form a ring shape is arranged behind the beam wave conversion area, and the inner diameter of the collector is smaller than that of the ring-shaped electron beam.
The voltage of 400kV is applied between the cathode and the anode, the cathode emits annular electron beams with the inner diameter of 12mm, the outer diameter of 12.6mm and the beam intensity of 7.3kA, the annular electron beams are transmitted in a high-frequency structure under the guidance of an axial magnetic field with the magnetic field intensity of 1.5T, and the energy of the annular electron beams is transferred to a microwave field to generate high-power microwaves with the frequency of 67.4 GHz.
In conclusion, the high-frequency high-power microwave device adopts a coaxial structure design, has very compact axial and radial dimensions, and has the advantages of compact structural dimension, miniaturization, light weight and easy assembly compared with a device in the same frequency band; high-power microwave generation with the frequency of 67.4GHz is realized, and the microwave device is a feasible high-frequency high-power microwave device.
The invention is not limited to the foregoing embodiments. The invention extends to any novel feature or any novel combination of features disclosed in this specification and any novel method or process steps or any novel combination of features disclosed.
Claims (6)
1. A high-frequency high-power microwave device is characterized in that: the coaxial waveguide fiber comprises a circular waveguide sleeve and an inner conductor which is coaxial with the circular waveguide sleeve, wherein a high-frequency structure is arranged in the circular waveguide sleeve;
an electron beam transmission channel with the inner diameter of 8mm and the outer diameter of 14.6mm is formed between the inner conductor and the circular waveguide sleeve;
the high-frequency structure is sequentially provided with a coaxial reflecting area, a beam pre-modulation area, a phase modulation area and a beam wave conversion area along the transmission direction of the electron beam;
a collector which is radially inwards protruded and annular is arranged behind the beam wave conversion area;
the reflection area, the beam pre-modulation area, the phase modulation area and the beam conversion area are respectively provided with a reflection cavity, a beam pre-modulation cavity, a phase modulation cavity and a beam conversion cavity in the shape of a ring groove on the circular waveguide sleeve;
the annular electron beam with the inner diameter of 12mm, the outer diameter of 12.6mm, the voltage of 400kV and the beam intensity of 7.3kA is transmitted in a high-frequency structure under the guidance of an axial magnetic field with the magnetic field intensity of 1.5T to generate high-frequency high-power microwaves with the frequency of 67.4 GHz.
2. The high frequency high power microwave device of claim 1 wherein: the reflection cavity, the beam premodulation cavity, the phase modulation cavity and the beam conversion cavity are all annular cavities with rectangular sections.
3. The high frequency high power microwave device of claim 1 wherein: the external diameter of the reflection cavity is 17.6mm, and the axial length is 1 mm.
4. The high frequency high power microwave device of claim 1 wherein: the beam pre-modulation area comprises a first beam pre-modulation cavity and a second beam pre-modulation cavity which are the same in size, the outer diameter of the first beam pre-modulation cavity and the outer diameter of the second beam pre-modulation cavity are 16.6mm, the axial length of the first beam pre-modulation cavity and the axial length of the second beam pre-modulation cavity are 0.9mm, and the interval between the two beam pre-modulation cavities is 0.8 mm.
5. The high frequency high power microwave device of claim 1 wherein: the outer diameter of the phase modulation cavity is 19.6mm, the axial length of the phase modulation cavity is 0.9mm, and the interval between the phase modulation cavity and the second beam premodulation cavity is 0.8 mm.
6. The high frequency high power microwave device of claim 1 wherein: the wave conversion zone comprises a first wave conversion cavity, a second wave conversion cavity and a third wave conversion cavity which are the same in size, the outer diameters of the first wave conversion cavity, the second wave conversion cavity and the third wave conversion cavity are 16.6mm, the axial lengths of the first wave conversion cavity, the second wave conversion cavity and the third wave conversion cavity are 0.9mm, and the interval between every two adjacent wave conversion cavities is 0.8 mm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111540659A (en) * | 2020-04-02 | 2020-08-14 | 中国工程物理研究院应用电子学研究所 | 4GHz high power microwave device |
| CN113764242A (en) * | 2021-07-30 | 2021-12-07 | 中国工程物理研究院应用电子学研究所 | Conformal input coupling miniaturized relativistic klystron amplifier |
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Cited By (4)
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| CN111540659A (en) * | 2020-04-02 | 2020-08-14 | 中国工程物理研究院应用电子学研究所 | 4GHz high power microwave device |
| CN111540659B (en) * | 2020-04-02 | 2022-03-29 | 中国工程物理研究院应用电子学研究所 | 4GHz high power microwave device |
| CN113764242A (en) * | 2021-07-30 | 2021-12-07 | 中国工程物理研究院应用电子学研究所 | Conformal input coupling miniaturized relativistic klystron amplifier |
| CN113764242B (en) * | 2021-07-30 | 2023-06-20 | 中国工程物理研究院应用电子学研究所 | Conformal input coupling miniaturized relativistic klystron amplifier |
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