CN110718429B - Double-frequency three-cavity high-power microwave device - Google Patents
Double-frequency three-cavity high-power microwave device Download PDFInfo
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- CN110718429B CN110718429B CN201910923610.1A CN201910923610A CN110718429B CN 110718429 B CN110718429 B CN 110718429B CN 201910923610 A CN201910923610 A CN 201910923610A CN 110718429 B CN110718429 B CN 110718429B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
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Abstract
The invention discloses a double-frequency three-cavity high-power microwave device, which comprises a circular waveguide sleeve and an inner conductor coaxial with the circular waveguide sleeve; a cathode coaxial with the circular waveguide sleeve is arranged at one end in the circular waveguide sleeve, the opening of the cathode is annular, the inner diameter of the cathode is 60mm, and the outer diameter of the cathode is 70 mm; the circular waveguide sleeve is sequentially provided with a reflection cavity, a resonant cavity and an extraction cavity which have the same inner diameter along the transmission direction of the electron beam, and the reflection cavity, the resonant cavity and the extraction cavity are annular grooves arranged on the wall of the circular waveguide sleeve; the axial length of the microwave device is 130mm, the maximum diameter is 150mm, and the diameter of the inner conductor is 40 mm; under the voltage of 400KV, the cathode emits an annular electron beam with the beam intensity of 7.0kA, the annular electron beam is transmitted in a microwave device under the guidance of a 0.4T axial magnetic field, and double-frequency high-power microwaves with the frequencies of 1.92GHz and 2.2GHz can be simultaneously radiated and generated within one pulse time. The dual-frequency three-cavity high-power microwave device has the advantages of miniaturization, light weight and easiness in adjustment.
Description
Technical Field
The invention relates to a double-frequency three-cavity high-power microwave device, and belongs to the technical field of high-power microwave devices.
Background
The high-power microwave generally refers to electromagnetic waves with peak power of more than 100MW and working frequency of 1-300 GHz. With the development of high-power microwave research, higher and higher requirements are put on the overall system efficiency of a high-power microwave source.
The axial O-shaped high-power microwave device is a high-power microwave device with wider application due to the easy guidance of electron beams and the changeable combination of the structure. At present, a longer slow wave structure is generally needed for the radiation generation of an axial O-shaped high-power microwave device to achieve the synchronization of the phase velocity of an electron beam and the microwave. In the existing high-power microwave source, the high-impedance device has high beam conversion efficiency, but generally needs a strong guiding magnetic field, and particularly needs a bulky and high-energy-consumption solenoid magnet system when the microwave source operates in a repeated frequency state. If the axial size of the device is shortened as much as possible, the volume and the weight of the magnet system can be reduced by several times, and the energy requirement of a magnetic field on a power supply can be greatly reduced. Therefore, how to design a compact high-power microwave source is one of the pursued targets.
Disclosure of Invention
The invention aims to: aiming at the problems, the invention provides a dual-frequency three-cavity high-power microwave device which has the advantages of miniaturization, light weight and easy adjustment.
The technical scheme adopted by the invention is as follows:
a dual-frequency three-cavity high-power microwave device comprises a circular waveguide sleeve and an inner conductor coaxial with the circular waveguide sleeve;
a cathode coaxial with the circular waveguide sleeve is arranged at one end in the circular waveguide sleeve, the opening of the cathode is annular, the inner diameter of the cathode is 60mm, and the outer diameter of the cathode is 70 mm;
the circular waveguide sleeve is sequentially provided with a reflection cavity, a resonant cavity and an extraction cavity which have the same inner diameter along the transmission direction of the electron beam, and the reflection cavity, the resonant cavity and the extraction cavity are annular grooves formed in the circular waveguide sleeve;
the axial length of the microwave device is 130mm, the maximum diameter of the microwave device is 150mm, and the diameter of the inner conductor is 40 mm;
under the voltage of 400KV, the cathode emits an annular electron beam with the beam intensity of 7.0kA, the annular electron beam is transmitted in a microwave device under the guidance of a 0.4T axial magnetic field, and double-frequency high-power microwaves with the frequencies of 1.92GHz and 2.2GHz can be simultaneously radiated and generated within one pulse time.
In the scheme, two ends of a circular waveguide sleeve are closed, the interior of the circular waveguide sleeve is vacuumized to millipascal level, an inner conductor is connected with the other end, opposite to a cathode, of the circular waveguide sleeve, and annular electron beams are transmitted in a microwave device; the reflection cavity can intercept the reverse energy in the transmission process of the electron beam, so that the energy of the electron beam entering the beam-wave conversion area is improved; the resonant cavity can lead the electron beam and the microwave with the same phase to generate energy conversion at the position; the extraction chamber is capable of separating microwaves from the electron beam.
Preferably, the reflection cavity, the resonant cavity and the extraction cavity are annular grooves which are rectangular in cross section and are connected with the circular waveguide sleeve.
Preferably, the reflection cavity, the resonant cavity and the extraction cavity are coaxial with the circular waveguide sleeve.
Preferably, the reflection cavity has an outer diameter of 150mm, an inner diameter of 88mm, and an axial length of 30 mm; the outer diameter of the resonant cavity is 130mm, the inner diameter is 88mm, and the axial length is 30 mm; the extraction chamber has an outer diameter of 150mm, an inner diameter of 88mm and an axial length of 30 mm.
Preferably, the axial distance between the reflecting cavity and the resonant cavity is 10 mm; the axial distance between the resonant cavity and the extraction cavity is 30 mm.
Preferably, the annular electron beam has an inner diameter of 60mm and an outer diameter of 70 mm.
Preferably, the maximum diameter of the microwave device coincides with the maximum outer diameter of the reflective cavity, the resonant cavity and the extraction cavity.
In the scheme, the outer diameters of the reflection cavity, the resonant cavity and the extraction cavity refer to the diameter of the bottom circle of the cavity; the inner diameters of the reflection cavity, the resonant cavity and the extraction cavity refer to the diameter of a circle at the opening of the cavity.
According to the double-frequency three-cavity high-power microwave device, the axial compact slow wave structure is adopted to generate double-frequency high-power microwaves, the double-frequency high-power microwave device is simple in structure, the axial size and the radial size are very compact, and compared with a device in the same frequency band, the double-frequency three-cavity high-power microwave device is simple in structure size, small in size, light in weight and easy to adjust; the size and the weight of a high-power microwave source system can be greatly reduced, and the energy requirement of a magnetic field on a power supply can be greatly reduced; is a miniaturized double-frequency high-power microwave device.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that: the structure is simple, the size is compact, and the device has the advantages of miniaturization, light weight and easy adjustment; the size and the weight of a high-power microwave source system can be greatly reduced, and the energy requirement of a magnetic field on a power supply can be greatly reduced.
Drawings
The invention will now be described, by way of example, with reference to the accompanying drawings, in which:
fig. 1 is a schematic cross-sectional structure diagram of a dual-frequency three-cavity high-power microwave device.
The labels in the figure are: 1-reflection cavity, 2-resonant cavity, 3-extraction cavity, 4-outer sleeve, 5-inner conductor, 6-cathode and 7-annular electron beam.
Detailed Description
All of the features disclosed in this specification, or all of the steps in any method or process so disclosed, may be combined in any combination, except combinations of features and/or steps that are mutually exclusive.
Any feature disclosed in this specification may be replaced by alternative features serving equivalent or similar purposes, unless expressly stated otherwise. That is, unless expressly stated otherwise, each feature is only an example of a generic series of equivalent or similar features.
As shown in fig. 1, the dual-frequency three-cavity high-power microwave device of this embodiment includes a circular waveguide sleeve and an inner conductor coaxial with the circular waveguide sleeve, both ends of the circular waveguide sleeve are closed, the inside is evacuated to a millipascal level, a cathode coaxial with the circular waveguide sleeve is arranged at one end in the circular waveguide sleeve, an opening of the cathode is annular, the inner diameter of the cathode is 60mm, and the outer diameter is 70 mm; the inner conductor is connected with the other end of the circular waveguide sleeve opposite to the cathode; the microwave device has a maximum diameter of 150mm and an inner conductor diameter of 40 mm.
The circular waveguide sleeve comprises a reflecting cavity, a resonant cavity and an extracting cavity which are coaxial with the circular waveguide sleeve and are sequentially arranged along the transmission direction of the electron beam, and the reflecting cavity, the resonant cavity and the extracting cavity are annular grooves with rectangular sections arranged on the circular waveguide sleeve; the outer diameter of the reflecting cavity is 150mm, the inner diameter is 88mm, and the axial length is 30 mm; the outer diameter of the resonant cavity is 130mm, the inner diameter is 88mm, and the axial length is 30 mm; the external diameter of the extraction cavity is 150mm, the internal diameter is 88mm, and the axial length is 30 mm; the axial distance between the reflecting cavity and the resonant cavity is 10mm, and the axial distance between the resonant cavity and the extracting cavity is 30 mm.
The voltage of 400kV is applied between the cathode and the anode, the cathode emits annular electron beams with the inner diameter of 60mm, the outer diameter of 70mm and the beam intensity of 7.0kA, the annular electron beams are transmitted in the microwave device under the guidance of a 0.4T axial magnetic field, the energy of the annular electron beams is transferred to a microwave field, and high-power microwaves with the frequency of 1.92GHz, the frequency of 2.2GHz and the power of 500MW are generated within one voltage pulse time.
In conclusion, the dual-frequency three-cavity high-power microwave device has the advantages of simple structure, compact size, miniaturization, light weight and easiness in adjustment; the size and the weight of a high-power microwave source system can be greatly reduced, and the energy requirement of a magnetic field on a power supply can be greatly reduced.
The invention is not limited to the foregoing embodiments. The invention extends to any novel feature or any novel combination of features disclosed in this specification and any novel method or process steps or any novel combination of features disclosed.
Claims (1)
1. A dual-frequency three-cavity high-power microwave device is characterized in that: comprises a circular waveguide sleeve and an inner conductor coaxial with the circular waveguide sleeve;
a cathode coaxial with the circular waveguide sleeve is arranged at one end in the circular waveguide sleeve, the opening of the cathode is annular, the inner diameter of the cathode is 60mm, and the outer diameter of the cathode is 70 mm; the inner conductor is connected with the other end of the circular waveguide sleeve opposite to the cathode;
the circular waveguide sleeve is sequentially provided with a reflection cavity, a resonant cavity and an extraction cavity which have the same inner diameter along the transmission direction of the electron beam, and the reflection cavity, the resonant cavity and the extraction cavity are annular grooves with rectangular sections and arranged on the circular waveguide sleeve; the outer diameter of the reflecting cavity is 150mm, the inner diameter is 88mm, and the axial length is 30 mm; the outer diameter of the resonant cavity is 130mm, the inner diameter is 88mm, and the axial length is 30 mm; the external diameter of the extraction cavity is 150mm, the internal diameter is 88mm, and the axial length is 30 mm; the axial distance between the reflecting cavity and the resonant cavity is 10mm, and the axial distance between the resonant cavity and the extracting cavity is 30 mm;
the axial length of the microwave device is 130mm, the maximum diameter of the microwave device is 150mm, and the diameter of the inner conductor is 40 mm;
the voltage of 400kV is applied between the cathode and the anode, the cathode emits annular electron beams with the inner diameter of 60mm, the outer diameter of 70mm and the beam intensity of 7.0kA, the annular electron beams are transmitted in the microwave device under the guidance of a 0.4T axial magnetic field, the energy of the annular electron beams is transferred to a microwave field, and high-power microwaves with the frequency of 1.92GHz, the frequency of 2.2GHz and the power of 500MW are generated within one voltage pulse time.
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| CN111540656B (en) * | 2020-04-02 | 2023-03-31 | 中国工程物理研究院应用电子学研究所 | S and C waveband double-frequency controllable high-power microwave device |
| CN111540660B (en) * | 2020-04-02 | 2023-03-28 | 中国工程物理研究院应用电子学研究所 | C, X wave band double-frequency compact high-power microwave device |
| CN112382551B (en) * | 2020-11-12 | 2022-03-11 | 中国人民解放军国防科技大学 | Ka frequency band high-power microwave coaxial transit time oscillator adopting internal extraction |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| UA14340U (en) * | 2005-11-07 | 2006-05-15 | Univ Vinnytsia Nat Tech | High-stable two-frequency microwave generator |
| CN105720922A (en) * | 2016-01-29 | 2016-06-29 | 中国工程物理研究院应用电子学研究所 | Cross-band double-frequency field-free high-power microwave device |
| CN105869972A (en) * | 2016-04-14 | 2016-08-17 | 中国工程物理研究院应用电子学研究所 | Large-span waveband dual-band controllable relativistic backward-wave oscillator |
| CN205488027U (en) * | 2016-01-29 | 2016-08-17 | 中国工程物理研究院应用电子学研究所 | Controllable no magnetic field high power microwave device of dual -frenquency |
| CN205488026U (en) * | 2016-01-29 | 2016-08-17 | 中国工程物理研究院应用电子学研究所 | Controllable no magnetic field high power microwave device of L wave band multifrequency |
| CN106298407A (en) * | 2016-09-09 | 2017-01-04 | 中国工程物理研究院应用电子学研究所 | A kind of three controlled high-power pulsed ion beams of frequency |
| CN109524283A (en) * | 2018-12-10 | 2019-03-26 | 中国工程物理研究院应用电子学研究所 | A kind of low guidance magnetic field compact high power microwave device of two waveband |
| CN109585242A (en) * | 2018-11-08 | 2019-04-05 | 西北核技术研究所 | A kind of double-frequency high-power microwave generator |
-
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- 2019-09-27 CN CN201910923610.1A patent/CN110718429B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| UA14340U (en) * | 2005-11-07 | 2006-05-15 | Univ Vinnytsia Nat Tech | High-stable two-frequency microwave generator |
| CN105720922A (en) * | 2016-01-29 | 2016-06-29 | 中国工程物理研究院应用电子学研究所 | Cross-band double-frequency field-free high-power microwave device |
| CN205488027U (en) * | 2016-01-29 | 2016-08-17 | 中国工程物理研究院应用电子学研究所 | Controllable no magnetic field high power microwave device of dual -frenquency |
| CN205488026U (en) * | 2016-01-29 | 2016-08-17 | 中国工程物理研究院应用电子学研究所 | Controllable no magnetic field high power microwave device of L wave band multifrequency |
| CN105869972A (en) * | 2016-04-14 | 2016-08-17 | 中国工程物理研究院应用电子学研究所 | Large-span waveband dual-band controllable relativistic backward-wave oscillator |
| CN106298407A (en) * | 2016-09-09 | 2017-01-04 | 中国工程物理研究院应用电子学研究所 | A kind of three controlled high-power pulsed ion beams of frequency |
| CN109585242A (en) * | 2018-11-08 | 2019-04-05 | 西北核技术研究所 | A kind of double-frequency high-power microwave generator |
| CN109524283A (en) * | 2018-12-10 | 2019-03-26 | 中国工程物理研究院应用电子学研究所 | A kind of low guidance magnetic field compact high power microwave device of two waveband |
Non-Patent Citations (1)
| Title |
|---|
| 新型径向三腔同轴虚阴极振荡器的模拟研究;罗雄，等.;《强激光与粒子束》;20070115;第19卷(第1期);第91-93页 * |
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