CN106298407A - A kind of three controlled high-power pulsed ion beams of frequency - Google Patents
A kind of three controlled high-power pulsed ion beams of frequency Download PDFInfo
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- CN106298407A CN106298407A CN201610812971.5A CN201610812971A CN106298407A CN 106298407 A CN106298407 A CN 106298407A CN 201610812971 A CN201610812971 A CN 201610812971A CN 106298407 A CN106298407 A CN 106298407A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
- H01J25/34—Travelling-wave tubes; Tubes in which a travelling wave is simulated at spaced gaps
- H01J25/42—Tubes in which an electron stream interacts with a wave travelling along a delay line or equivalent sequence of impedance elements, and with a magnet system producing an H-field crossing the E-field
- H01J25/46—Tubes in which an electron stream interacts with a wave travelling along a delay line or equivalent sequence of impedance elements, and with a magnet system producing an H-field crossing the E-field the backward travelling wave being utilised
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Abstract
The invention discloses a kind of three controlled high-power pulsed ion beams of frequency, utilize the construction features of coaxial Relativistic backward-wave oscillator, using coaxial inner conductor in low frequency device as high band device, the most controlled three diameter electron beams are utilized to make Relativistic backward-wave oscillator can be sequentially generated low-frequency range as required, the single frequency high-power microwave of Mid Frequency and high band, controlled three diameter negative electrodes are by coaxial, in, outer annular cathode forms, and fixing with the motor controlling each negative electrode axial location be respectively connected, controllable adjustment by three motors, realize the strong current electron beam of the controlled generation different-diameter of three transmitting diameter negative electrodes；The microwave device of each frequency range in the present invention can design accordingly according to actual frequency demand, and flexible structure is changeable, can well realize the generation of the three controlled High-Power Microwaves of frequency in high-power pulsed ion beams.
Description
Technical field
The present invention relates to high-power pulsed ion beams technical field, be specifically related to a kind of three controlled high-power pulsed ion beams of frequency.
Background technology
In recent years, high-power microwave source pursue high power, high efficiency and realize that long pulse and Gao Zhongying run same
Time, also present other some development characteristic, there is as pursued the generation of single microwave source device the microwave of multiple frequency.Should
The device of type is capable of the multifrequency output of single agitator, is that the expansion research to single-frequency oscillator and integrated innovation should
With, there is certain learning value and potential application prospect.Relativistic backward-wave oscillator has high power, high efficiency, is suitable for
The work characteristics that repetition runs, is that current most potential High-Power Microwave produces one of device, at High-Power Microwave generator
Occupying an important position in part, the research of multifrequency Relativistic backward-wave oscillator is conducive to expanding its application further, has important
Realistic meaning.
Due to the application potential of High-Power Microwave, especially as making that complex electromagnetic environment structure and directional energy are equipped
With so that High-Power Microwave technology is the most tempting in the effect of hyundai electronics message context.If it has recently been demonstrated that with two
Individual or multiple frequency high power microwave beam attacks electronic system, and required destroying value can reduce, and uses this technology meeting
Power microwave technology is made to tend to practical quickly.But, generation its essence of double-frequency high-power microwave method of report is equal both at home and abroad
For overlapping single single-frequency microwave source with two, this method comes with some shortcomings: first two sets or the microwave source overlapping independent operating more
Certain difficulty will be there is in synchronism output；Secondly, the space radiation pattern of the microwave source of two sets or many set independent operatings is the most multiple
Miscellaneous, it is unfavorable for the actual application of High-Power Microwave；It addition, the microwave source of two set independent operatings also can increase research cost.Therefore,
Study a kind of energy controlled output difference single-frequency or simultaneously output two frequencies microwave source will have important learning value and should
By value, this is also another new research direction of High-Power Microwave technical research, will carry for high power microwave effects research
For excellent basis.
Summary of the invention
It is an object of the invention to utilize the construction features research of coaxial Relativistic backward-wave oscillator, by coaxial in low frequency device
Inner wire is as Mid Frequency device, and in intermediate frequency device, coaxial inner conductor is as high band device, utilizes controlled three diameter negative electrodes to make
Relativistic backward-wave oscillator can be sequentially generated low frequency, intermediate frequency and three single frequency high-power microwaves of high frequency as required.In the present invention
Low frequency and high-frequency element can design accordingly according to actual frequency demand, flexible structure is changeable, at High-Power Microwave device
Part can well realize the generation of the three controlled High-Power Microwaves of frequency.
For achieving the above object, the present invention adopts the following technical scheme that
A kind of three controlled high-power pulsed ion beams of frequency, including high-power pulsed ion beams, are arranged on high power by insulator support
Negative electrode in microwave device and active antenna,
Described negative electrode includes sequentially passing through cathode center axle and the low-frequency range negative electrode being coaxially disposed, Mid Frequency negative electrode, high band the moon
Pole and the motor each fixing to be connected with three negative electrodes, described Mid Frequency negative electrode is arranged in the open section of low-frequency range negative electrode,
High band negative electrode is arranged in the open section of Mid Frequency negative electrode；The outfan of one motor is connected to the blind end of low-frequency range negative electrode
On, the outfan of a motor is connected on the blind end of Mid Frequency negative electrode through the blind end of low-frequency range negative electrode, last
Motor is fixedly installed on cathode center shaft end and outfan is connected on the blind end of high band negative electrode, and described low-frequency range is cloudy
Pole, Mid Frequency negative electrode, high band negative electrode axially move horizontally along cathode center axle under the driving of respective motor；
Low-frequency range device that described high-power pulsed ion beams includes being coaxially disposed, Mid Frequency device, high band device, described high frequency
In section device is arranged on Mid Frequency device and being connected to one by connector between the two, described Mid Frequency device is arranged
In low-frequency range device, and be connected to one by connector between the two, described low-frequency range device, Mid Frequency device,
The afterbody correspondence of high band device connects low-frequency range device active antenna, Mid Frequency device active antenna, the radiation of high band device
Antenna；
The electron beam of the different-diameter that described low-frequency range negative electrode, Mid Frequency negative electrode, high band negative electrode produce is each and low-frequency range device
Part, Mid Frequency device, high band device are corresponding；
Described insulator, negative electrode, high-power pulsed ion beams, low-frequency range device active antenna constitute sealing vacuum cavity.
In technique scheme, described three separate settings of motor, low-frequency range negative electrode, Mid Frequency negative electrode, high frequency
Section negative electrode is to move phase along cathode center axle non-interference.
In technique scheme, described connector is the annular circular ring at two intervals.
In technique scheme, the junction point at said two annular circular ring two ends is in isoelectric level state.
In technique scheme, between said two annular circular ring, it is spaced 1/4th band wavelength.
In technique scheme, between two annular circular rings between Mid Frequency device and high band device, it is spaced four parts
One of intermediate frequency wavelength.
In technique scheme, between two annular circular rings between Mid Frequency device and low-frequency range device, it is spaced four parts
One of low frequency wavelength.
In technique scheme, described low frequency device use rearmounted power draw chamber and electron beam mutual with forward-wave
The structure of effect, uses preposition reflection cavity and many slow-wave structures in described intermediate frequency device, described high-frequency element uses preposition electronics
Bundle premodulated structure.
In technique scheme, the external dimensions structure of high-frequency element radiation tail end is intermediate frequency device TEM mode to TM01
The mode converter of pattern, its inside dimension structure is high-frequency element radiating horn antenna；The outside of intermediate frequency device radiation tail end
Dimensional structure is low frequency device TEM mode to TM01The mode converter of pattern, its inside dimension structure is that intermediate frequency device radiates loudspeaker
Antenna.
In sum, owing to have employed technique scheme, the invention has the beneficial effects as follows:
The present invention utilizes the construction features research of coaxial Relativistic backward-wave oscillator, using coaxial inner conductor in low frequency device as height
Frequency range device, utilizes controlled pair of diameter electron beam to make Relativistic backward-wave oscillator to be sequentially generated as required basic, normal, high three
The single frequency high-power microwave of frequency range.The microwave device of each frequency range in the present invention can set accordingly according to actual frequency demand
Meter, flexible structure is changeable, can well realize the generation of the three controlled High-Power Microwaves of frequency in high-power pulsed ion beams.
Accompanying drawing explanation
Examples of the present invention will be described by way of reference to the accompanying drawings, wherein:
Fig. 1 is the device architecture front section view of the present invention；
Fig. 2 is the controlled three diameter negative electrode front section views of the present invention；
Fig. 3, Fig. 4, Fig. 5 are the kinestate schematic diagrams of negative electrode；
Wherein, 1 is insulator, and material is nylon, and its effect is to be dielectrically separated from device anode and cathode；2 is controlled three diameters
Electron beam emitting cathode, has the motor that distribution is fixed to be connected with three different-diameter negative electrodes inside it, can be by wired
And wirelessly control each motor, and then control the axial location of different-diameter negative electrode；3 for controlling low-frequency range negative electrode
Motor；4 for controlling the motor of Mid Frequency negative electrode；5 for controlling the motor of high band negative electrode；6 is low-frequency range
Device cathodes；7 is Mid Frequency device cathodes；8 is high band device cathodes；9 is low-frequency range device；10 is Mid Frequency device；11
For high band device；12 is the strong current electron beam guided by axial magnetic field in low-frequency range device；In 13 are Mid Frequency device
The strong current electron beam guided by axial magnetic field；14 is the strong current electron beam guided by axial magnetic field in high band device；15 are
Low frequency device is connected the support annulus of fixing two interior axially spaced-apart 1/4th low frequency wavelength with intermediate frequency device, its effect
It is fixed intermediate frequency section device and makes the device of two wave bands be in isoelectric level state；16 is that intermediate frequency device is connected with high-frequency element admittedly
The support annulus of fixed interior two axially spaced-apart 1/4th intermediate frequency wavelength, its effect is fixing high band device and makes two
The device of wave band is in isoelectric level state；17 is low-frequency range device active antenna；18 is Mid Frequency Relativistic backward-wave oscillator spoke
Penetrating end, its external dimensions structure is low-frequency range TEM mode to TM01The mode converter of pattern, during its inside dimension structure is
Section device radiating horn antenna；19 is high band Relativistic backward-wave oscillator radiation tail end, and its external dimensions structure is Mid Frequency
TEM mode is to TM01The mode converter of pattern, its inside dimension structure is high section device radiating horn antenna；20 is three frequency ranges
Active antenna medium window, material is politef, and its thickness should meet the minimal reflection coefficient of three frequencies.Insulator, the moon
Pole, high-power pulsed ion beams and active antenna constitute vacuum chamber, and vacuum is generally millipascal.
Detailed description of the invention
All features disclosed in this specification, or disclosed all methods or during step, except mutually exclusive
Feature and/or step beyond, all can combine by any way.
As shown in Fig. 1, Fig. 2, the present invention utilizes the construction features research of coaxial Relativistic backward-wave oscillator, by low frequency device
In part, coaxial inner conductor is as Mid Frequency device, and in intermediate frequency device, coaxial inner conductor is as high band device.Utilize controlled coaxially
It is micro-that three diameter negative electrodes make Relativistic backward-wave oscillator can be sequentially generated the single frequency high-power of basic, normal, high three wave bands as required
Ripple.
Controlled three diameter negative electrodes by coaxial, in, outer annular cathode forms, and respectively at controlling the axial position of each negative electrode
The motor put is fixing to be connected.Controllable adjustment by three motors, it is achieved three launch the controlled generation of diameter negative electrode
The strong current electron beam of different-diameter.Three frequency controlled Relativistic backward-wave oscillator medium and low frequency devices in use rearmounted power draw chamber and
The method for designing that electron beam interacts with forward-wave, under ensureing bundle ripple conversion efficiency premise, decreases the slow-wave structure cycle,
Significantly reduce device axial dimension.Intermediate frequency device uses preposition reflection cavity and the method for designing of many slow-wave structures, fully profit
With the axial space of low frequency device, improve bundle ripple conversion efficiency.High-frequency element uses preposition electron beam premodulated method for designing, fills
Divide and utilize intermediate frequency device axial space, bundle ripple conversion efficiency is greatly improved.
At high-frequency element microwave outfan, by support annulus and the intermediate frequency of two axially spaced-apart 1/4th intermediate frequency wavelength
Device connects.High frequency is made to be in isoelectric level state with the device of two wave bands of intermediate frequency.At intermediate frequency device microwave outfan, pass through
The support annulus of two axially spaced-apart 1/4th low frequency wavelength is connected with low frequency device.Make intermediate frequency and two wave bands of low frequency
Device is in isoelectric level state.
As the high-frequency element radiation tail end of coaxial inner conductor, its external dimensions structure is intermediate frequency device TEM mode to TM01
The mode converter of pattern, its inside dimension structure is high-frequency element radiating horn antenna.Intermediate frequency device as coaxial inner conductor
Part radiation tail end, its external dimensions structure is low frequency device TEM mode to TM01The mode converter of pattern, its inside dimension is tied
Structure is intermediate frequency device radiating horn antenna.
At the three controlled Relativistic backward-wave oscillator medium and low frequency device active antenna medium windows of frequency, (material is generally polytetrafluoroethyl-ne
Alkene), simultaneously as the active antenna medium window of intermediate frequency device and high-frequency element.It is micro-that the thickness of medium window is both satisfied three frequency ranges
The optimal size of wave radiation.The optimal size computing formula of medium window thickness is:
WhereinFor microwave wavelength,Relative dielectric constant for medium window material.Three band microwave obtained according to formula
The most required medium window thickness and the relation curve of n, finally determine the optimum thickness of medium window.Now, medium window is to three
The reflection of band microwave all minimizes.
Three motors of the emitting cathode of three different-diameters and cathode internal are connected fixing.By the moon in implementation process
The extremely internal motor being connected with low-frequency range negative electrode work so that low-frequency range negative electrode reaches electron beam with the spacing of anode
Transmitting range；And the negative electrode of middle and high frequency range is by the control axially-movable of respective motor to cathode internal, negative and positive interpolar
Distance strengthens so that medium, high frequency negative electrode can not divergent bundle；High voltage, low-frequency range negative electrode is applied between negative electrode and device
Launch strong current electron beam and enter low-frequency range device, then produce low frequency high power microwave by aerial radiation.Its negative electrode state such as Fig. 3
Shown in.Worked by the motor being connected with Mid Frequency negative electrode of cathode internal so that Mid Frequency negative electrode and the spacing of anode
From reaching electron beam transmitting range；And the negative electrode of low, high band by the control axially-movable of respective motor to negative electrode
Inside, anode cathode separation strengthens so that low, high frequency negative electrode can not divergent bundle；High electricity is applied between negative electrode and device
Pressure, Mid Frequency emission of cathode strong current electron beam enters low-frequency range device, then produces Mid Frequency High-Power Microwave by aerial radiation.
Its negative electrode state is as shown in Figure 4.
Worked by the motor being connected with high band negative electrode of cathode internal so that between high band negative electrode and anode
Distance reaches electron beam transmitting range；And the control axially-movable Zhiyin that the negative electrode of low, Mid Frequency is by respective motor
Extremely internal, anode cathode separation strengthens so that low, Mid Frequency negative electrode can not divergent bundle；Apply between negative electrode and device
High voltage, high band emission of cathode strong current electron beam enters high band device, then produces high-frequency high-power by aerial radiation micro-
Ripple.Its negative electrode state is as shown in Figure 5.
The invention is not limited in aforesaid detailed description of the invention.The present invention expands to any disclose in this manual
New feature or any new combination, and the arbitrary new method that discloses or the step of process or any new combination.
Claims (9)
1. the three controlled high-power pulsed ion beams of frequency, including high-power pulsed ion beams, active antenna and is propped up by insulator
The negative electrode that support is arranged in high-power pulsed ion beams, it is characterised in that:
Described negative electrode includes sequentially passing through cathode center axle and the low-frequency range negative electrode being coaxially disposed, Mid Frequency negative electrode, high band the moon
Pole and the motor each fixing to be connected with three negative electrodes, described Mid Frequency negative electrode is arranged in the open section of low-frequency range negative electrode,
High band negative electrode is arranged in the open section of Mid Frequency negative electrode；The outfan of one motor is connected to the blind end of low-frequency range negative electrode
On, the outfan of a motor is connected on the blind end of Mid Frequency negative electrode through the blind end of low-frequency range negative electrode, last
Motor is fixedly installed on cathode center shaft end and outfan is connected on the blind end of high band negative electrode, and described low-frequency range is cloudy
Pole, Mid Frequency negative electrode, high band negative electrode axially move horizontally along cathode center axle under the driving of respective motor；
Low-frequency range device that described high-power pulsed ion beams includes being coaxially disposed, Mid Frequency device, high band device, described high frequency
In section device is arranged on Mid Frequency device and being connected to one by connector between the two, described Mid Frequency device is arranged
In low-frequency range device, and be connected to one by connector between the two, described low-frequency range device, Mid Frequency device,
The afterbody correspondence of high band device connects low-frequency range device active antenna, Mid Frequency device active antenna, the radiation of high band device
Antenna；
The electron beam of the different-diameter that described low-frequency range negative electrode, Mid Frequency negative electrode, high band negative electrode produce is each and low-frequency range device
Part, Mid Frequency device, high band device are corresponding；
Described insulator, negative electrode, high-power pulsed ion beams, low-frequency range device active antenna constitute sealing vacuum cavity.
A kind of three controlled high-power pulsed ion beams of frequency the most according to claim 1, it is characterised in that described three motor phases
Being independently arranged mutually, low-frequency range negative electrode, Mid Frequency negative electrode, high band negative electrode are to move phase along cathode center axle non-interference.
A kind of three controlled high-power pulsed ion beams of frequency the most according to claim 1, it is characterised in that described connector is two
The annular circular ring at individual interval.
A kind of three controlled high-power pulsed ion beams of frequency the most according to claim 3, it is characterised in that said two annular circle
The junction point at ring two ends is in isoelectric level state.
A kind of three controlled high-power pulsed ion beams of frequency the most according to claim 3, it is characterised in that said two annular circle
/ 4th band wavelength it are spaced between ring.
A kind of three controlled high-power pulsed ion beams of frequency the most according to claim 5, it is characterised in that Mid Frequency device is with high
One of four parts of interval intermediate frequency wavelength between two annular circular rings between frequency range device.
A kind of three controlled high-power pulsed ion beams of frequency the most according to claim 5, it is characterised in that Mid Frequency device is with low
One of four parts of interval low frequency wavelength between two annular circular rings between frequency range device.
A kind of three controlled high-power pulsed ion beams of frequency the most according to claim 1, it is characterised in that in described low frequency device
The structure using rearmounted power draw chamber and electron beam to interact with forward-wave, uses preposition reflection cavity in described intermediate frequency device
And many slow-wave structures, described high-frequency element uses preposition electron beam premodulated structure.
A kind of three controlled high-power pulsed ion beams of frequency the most according to claim 8, it is characterised in that high-frequency element radiation end
The external dimensions structure of end is intermediate frequency device TEM mode to TM01The mode converter of pattern, its inside dimension structure is high frequency device
Part radiating horn antenna；The external dimensions structure of intermediate frequency device radiation tail end is low frequency device TEM mode to TM01The pattern of pattern
Transducer, its inside dimension structure is intermediate frequency device radiating horn antenna.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106971929A (en) * | 2017-04-26 | 2017-07-21 | 中国工程物理研究院应用电子学研究所 | A kind of across wave band controllable Relativistic backward-wave oscillator of multifrequency |
| CN108807112A (en) * | 2018-06-13 | 2018-11-13 | 中国工程物理研究院应用电子学研究所 | A kind of interdigital arrangement high-power pulsed ion beams of coaxial double dielectrics |
| CN108807115A (en) * | 2018-06-13 | 2018-11-13 | 中国工程物理研究院应用电子学研究所 | A kind of end total reflection high-power pulsed ion beams |
| CN110718429A (en) * | 2019-09-27 | 2020-01-21 | 中国工程物理研究院应用电子学研究所 | Double-frequency three-cavity high-power microwave device |
| CN115036664A (en) * | 2022-06-14 | 2022-09-09 | 中国人民解放军国防科技大学 | Cross-three-band frequency hopping high-power microwave source based on electronic beam path electrical adjustment |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201629290U (en) * | 2009-12-22 | 2010-11-10 | 中国工程物理研究院应用电子学研究所 | Tunable backward wave tube |
| US8400225B1 (en) * | 2011-08-10 | 2013-03-19 | The United States Of America As Represented By The Secretary Of The Navy | Photocapacitively tunable electronic device utilizing electrical resonator with semiconductor junction |
| CN104465275A (en) * | 2014-12-04 | 2015-03-25 | 中国工程物理研究院应用电子学研究所 | Frequency-agility relativistic backward wave oscillator |
| CN105304434A (en) * | 2015-11-23 | 2016-02-03 | 中国工程物理研究院应用电子学研究所 | Adjustable dual-diameter device of intensive explosive emission cathode |
| CN105428191A (en) * | 2015-12-21 | 2016-03-23 | 电子科技大学 | Relativistic magnetron for realizing frequency hopping operation by utilizing transparent negative electrode |
| CN105470076A (en) * | 2015-11-23 | 2016-04-06 | 中国工程物理研究院应用电子学研究所 | Multi-frequency controllable high-power microwave device |
| CN105869972A (en) * | 2016-04-14 | 2016-08-17 | 中国工程物理研究院应用电子学研究所 | Large-span waveband dual-band controllable relativistic backward-wave oscillator |
| CN105869970A (en) * | 2016-04-18 | 2016-08-17 | 中国工程物理研究院应用电子学研究所 | Cross-band dual-frequency relativistic backward-wave oscillator |
| CN205488026U (en) * | 2016-01-29 | 2016-08-17 | 中国工程物理研究院应用电子学研究所 | Controllable no magnetic field high power microwave device of L wave band multifrequency |
| CN206003738U (en) * | 2016-09-09 | 2017-03-08 | 中国工程物理研究院应用电子学研究所 | A kind of Relativistic backward-wave oscillator producing three frequencies |
-
2016
- 2016-09-09 CN CN201610812971.5A patent/CN106298407A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201629290U (en) * | 2009-12-22 | 2010-11-10 | 中国工程物理研究院应用电子学研究所 | Tunable backward wave tube |
| US8400225B1 (en) * | 2011-08-10 | 2013-03-19 | The United States Of America As Represented By The Secretary Of The Navy | Photocapacitively tunable electronic device utilizing electrical resonator with semiconductor junction |
| CN104465275A (en) * | 2014-12-04 | 2015-03-25 | 中国工程物理研究院应用电子学研究所 | Frequency-agility relativistic backward wave oscillator |
| CN105304434A (en) * | 2015-11-23 | 2016-02-03 | 中国工程物理研究院应用电子学研究所 | Adjustable dual-diameter device of intensive explosive emission cathode |
| CN105470076A (en) * | 2015-11-23 | 2016-04-06 | 中国工程物理研究院应用电子学研究所 | Multi-frequency controllable high-power microwave device |
| CN105428191A (en) * | 2015-12-21 | 2016-03-23 | 电子科技大学 | Relativistic magnetron for realizing frequency hopping operation by utilizing transparent negative electrode |
| CN205488026U (en) * | 2016-01-29 | 2016-08-17 | 中国工程物理研究院应用电子学研究所 | Controllable no magnetic field high power microwave device of L wave band multifrequency |
| CN105869972A (en) * | 2016-04-14 | 2016-08-17 | 中国工程物理研究院应用电子学研究所 | Large-span waveband dual-band controllable relativistic backward-wave oscillator |
| CN105869970A (en) * | 2016-04-18 | 2016-08-17 | 中国工程物理研究院应用电子学研究所 | Cross-band dual-frequency relativistic backward-wave oscillator |
| CN206003738U (en) * | 2016-09-09 | 2017-03-08 | 中国工程物理研究院应用电子学研究所 | A kind of Relativistic backward-wave oscillator producing three frequencies |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106971929A (en) * | 2017-04-26 | 2017-07-21 | 中国工程物理研究院应用电子学研究所 | A kind of across wave band controllable Relativistic backward-wave oscillator of multifrequency |
| CN106971929B (en) * | 2017-04-26 | 2018-08-14 | 中国工程物理研究院应用电子学研究所 | The controllable Relativistic backward-wave oscillator of across the wave band multifrequency of one kind |
| CN108807112A (en) * | 2018-06-13 | 2018-11-13 | 中国工程物理研究院应用电子学研究所 | A kind of interdigital arrangement high-power pulsed ion beams of coaxial double dielectrics |
| CN108807115A (en) * | 2018-06-13 | 2018-11-13 | 中国工程物理研究院应用电子学研究所 | A kind of end total reflection high-power pulsed ion beams |
| CN110718429A (en) * | 2019-09-27 | 2020-01-21 | 中国工程物理研究院应用电子学研究所 | Double-frequency three-cavity high-power microwave device |
| CN110718429B (en) * | 2019-09-27 | 2021-10-26 | 中国工程物理研究院应用电子学研究所 | Double-frequency three-cavity high-power microwave device |
| CN115036664A (en) * | 2022-06-14 | 2022-09-09 | 中国人民解放军国防科技大学 | Cross-three-band frequency hopping high-power microwave source based on electronic beam path electrical adjustment |
| CN115036664B (en) * | 2022-06-14 | 2023-11-17 | 中国人民解放军国防科技大学 | Cross-three-band frequency hopping high-power microwave source based on electronic beam path electric adjustment |
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Application publication date: 20170104 |