CN105869970B - A kind of across waveband double-frequency Relativistic backward-wave oscillator - Google Patents
A kind of across waveband double-frequency Relativistic backward-wave oscillator Download PDFInfo
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- CN105869970B CN105869970B CN201610241084.7A CN201610241084A CN105869970B CN 105869970 B CN105869970 B CN 105869970B CN 201610241084 A CN201610241084 A CN 201610241084A CN 105869970 B CN105869970 B CN 105869970B
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- 230000003993 interaction Effects 0.000 claims abstract description 30
- 238000010894 electron beam technology Methods 0.000 claims abstract description 28
- 238000009826 distribution Methods 0.000 claims abstract description 6
- 230000007704 transition Effects 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- 238000005304 joining Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims 2
- 238000011160 research Methods 0.000 description 7
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 5
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- 238000010884 ion-beam technique Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
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- 238000013461 design Methods 0.000 description 1
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- 230000005611 electricity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/16—Circuit elements, having distributed capacitance and inductance, structurally associated with the tube and interacting with the discharge
- H01J23/18—Resonators
- H01J23/20—Cavity resonators; Adjustment or tuning thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/16—Circuit elements, having distributed capacitance and inductance, structurally associated with the tube and interacting with the discharge
- H01J23/24—Slow-wave structures, e.g. delay systems
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Abstract
The invention discloses across the waveband double-frequency Relativistic backward-wave oscillator of one kind, including the high-frequency microwave device and low frequency microwave device sequentially coaxially set；High-frequency microwave device includes：High frequency Relativistic backward-wave oscillator, negative electrode and high band device beam ripple interaction region are sequentially coaxially provided with it；The outside of high frequency Relativistic backward-wave oscillator is provided with the first guiding magnet；Low frequency microwave device includes：Low frequency Relativistic backward-wave oscillator, low-frequency range device beam ripple interaction region is provided with it；Low frequency Relativistic backward-wave oscillator is coaxially connected in the end of high frequency Relativistic backward-wave oscillator；The outside of low frequency Relativistic backward-wave oscillator is provided with the second guiding magnet.The present invention utilizes circular waveguide critical wavelength principle in Relativistic backward-wave oscillator, the introduction by magnetic field system for passing through different magnetic field intensity distribution using same intense relative annular electron beam, strong current electron beam successively by the high-frequency microwave device and low frequency microwave device of tandem, produces high band and the High-Power Microwave of low-frequency range respectively.
Description
Technical field
The present invention relates to high-power pulsed ion beams technical field, and in particular to a kind of across waveband double-frequency the theory of relativity backward wave oscillation
Device.
Background technology
In recent years, high-power microwave source pursue high power, high efficiency and realize long pulse and Gao Zhongying operation it is same
When, some other development characteristic are also presented, single microwave source device is such as pursued and produces the microwave with multiple frequencies.Should
The device of type can realize the multifrequency output of single oscillator, be that expansion research to single-frequency oscillator and integrated innovation should
With having certain learning value and potential application prospect.Relativistic backward-wave oscillator has high power, high efficiency, is adapted to
The work characteristics of repetition operation, it is that most potential High-Power Microwave produces one of device at present, in High-Power Microwave generator
Occupied an important position in part, the research of multifrequency Relativistic backward-wave oscillator is advantageous to further expand its application, has important
Realistic meaning.
Research shows, if with the high power microwave beam irradiated electrons system of two or more frequencies, required destruction
Threshold values can reduce, and using this technology power microwave technology can be made quickly to tend to be practical.However, the generation reported both at home and abroad is double
Its essence of frequency High-Power Microwave method is to be come with some shortcomings with two sets of single single-frequency microwave sources, this method：First two
There will be certain difficulty for the microwave source synchronism output of set or more set independent operatings；Secondly, two sets or the microwave for covering independent operating more
The space radiation pattern in source is complex, is unfavorable for the practical application of High-Power Microwave；In addition, the microwave of two sets of independent operatings
Source can also increase research cost.Therefore, study a kind of microwave source that can export two frequencies by with important learning value and
Application value, this is also another new research direction of High-Power Microwave technical research, will be that high power microwave effectses are studied
Excellent basis is provided.
The present invention utilizes circular waveguide critical wavelength principle in Relativistic backward-wave oscillator, is passed through using same strong current electron beam
The introduction by magnetic field system of different magnetic field intensity distribution, strong current electron beam successively pass through the minor diameter high-frequency element and major diameter of tandem
Low frequency device, high band and the High-Power Microwave of low-frequency range are produced respectively.Low frequency and high-frequency element in the present invention can be according to realities
Border frequency needs are designed accordingly, and flexible structure is changeable, can be very good to realize in high-power pulsed ion beams greatly across ripple
The generation of section double-frequency high-power microwave.
The content of the invention
It is an object of the invention to solve at least the above and/or defect, and provide at least will be described later it is excellent
Point.
In order to realize according to object of the present invention and further advantage, there is provided a kind of across waveband double-frequency the theory of relativity backward wave
Oscillator, including the high-frequency microwave device and low frequency microwave device sequentially coaxially set.
Preferably, the wavelength of High-Power Microwave caused by the low frequency microwave device is more than the straight of high-frequency microwave device
Footpath.
Preferably, the high-frequency microwave device includes：
High frequency Relativistic backward-wave oscillator, negative electrode and high band device beam ripple interaction region are sequentially coaxially provided with it；
The outside of the high frequency Relativistic backward-wave oscillator is provided with the first guiding magnet；
The low frequency microwave device includes：
Low frequency Relativistic backward-wave oscillator, low-frequency range device beam ripple interaction region is provided with it；Described low frequency the theory of relativity
Backward wave oscillator is coaxially connected in the end of high frequency Relativistic backward-wave oscillator；The outside of the low frequency Relativistic backward-wave oscillator
It is provided with the second guiding magnet.
Preferably, the high band device beam ripple interaction region is made up of multiple first slow-wave structures；The multiple
One slow-wave structure is made up of the multiple spaced first annular blades being sequentially distributed since emission of cathode end；
The low-frequency range device beam ripple interaction region is made up of multiple second slow-wave structures；The multiple second slow-wave structure
It is made up of multiple spaced second annular blades being sequentially distributed.
Preferably, the diameter of first slow-wave structure is less than the diameter of the second slow-wave structure.
Preferably, the high band device beam ripple interaction region is made up of 14 the first slow-wave structures, the first slow wave knot
The Cycle Length of structure is 3.3mm, a diameter of 7mm, chamber depth are 0.75mm.
Preferably, the low-frequency range device beam ripple interaction region is made up of 8 the second slow-wave structures, the second slow-wave structure
Cycle Length be 20mm, a diameter of 22mm, chamber depth be 1.4mm.
Preferably, the first guiding magnet and the second guiding magnet produce 1T axially directed magnetic field.
Preferably, the negative electrode is graphite cathode, and field emission graphite cathode produces under negative and positive pole tension 300kV drivings
Raw current strength is 1.5kA intense relative annular electron beam, and intense relative annular electron beam inner and outer diameter is respectively 5.2mm and 5.6mm；
Enter high band device beam ripple interaction region under the guiding of the first guiding magnet, and it is 38GHz to radiate generation Ka audio range frequencies
High-Power Microwave, first guiding magnet with second guiding magnet joining place generation one step transitions formula axial magnetic field,
In the presence of this magnetic field, intense relative annular electron beam inner and outer diameter expands as 16mm and 18mm, and it is mutual to enter low-frequency range device beam ripple
Active region, and radiate the High-Power Microwave for producing that C-band frequency is 4.8GHz.
Preferably, it is vacuum chamber in the high-frequency microwave device and low frequency microwave device.
The present invention comprises at least following beneficial effect：The present invention utilizes circular waveguide critical wavelength in Relativistic backward-wave oscillator
Principle, the introduction by magnetic field system using same intense relative annular electron beam by different magnetic field intensity distribution, strong current electron beam is successively
By the minor diameter high-frequency element (high-frequency microwave device) and major diameter low frequency device (low frequency microwave device) of tandem, produce respectively
The High-Power Microwave of high band and low-frequency range.Low frequency and high-frequency element in the present invention can carry out corresponding according to actual frequency demand
Design, flexible structure is changeable, can be very good in high-power pulsed ion beams realize greatly across waveband double-frequency High-Power Microwave
Produce.
Further advantage, target and the feature of the present invention embodies part by following explanation, and part will also be by this
The research and practice of invention and be understood by the person skilled in the art.
Brief description of the drawings：
Fig. 1 is across the front section view of waveband double-frequency Relativistic backward-wave oscillator described in one embodiment of the invention；
Fig. 2 is across the front section view of waveband double-frequency Relativistic backward-wave oscillator described in another embodiment of the present invention.
Embodiment：
The present invention is described in further detail below in conjunction with the accompanying drawings, to make those skilled in the art with reference to specification text
Word can be implemented according to this.
It should be appreciated that such as " having ", "comprising" and " comprising " term used herein do not allot one or more
The presence or addition of individual other elements or its combination.
Across the waveband double-frequency Relativistic backward-wave oscillator of one kind of the present invention, including the high-frequency microwave device sequentially coaxially set
With low frequency microwave device；Using circular waveguide critical wavelength principle, pass through different magnetic field intensity using same intense relative annular electron beam
The introduction by magnetic field system of distribution, intense relative annular electron beam successively by the high-frequency microwave device (minor diameter high-frequency element) of tandem and
Low frequency microwave device (major diameter low frequency device), high band and the High-Power Microwave of low-frequency range is produced respectively, in this technical side
In case, the critical wavelength for the high-frequency microwave device that intense relative annular electron beam first passes through thereafter passes through less than intense relative annular electron beam
Low frequency microwave device caused by low frequency high power microwave wavelength.
In the above-mentioned technical solutions, it is vacuum chamber in the high-frequency microwave device and low frequency microwave device, vacuum is general
For millipascal.
In the above-mentioned technical solutions, the wavelength of High-Power Microwave caused by the low frequency microwave device is more than high-frequency microwave devices
The diameter of part, therefore low frequency microwave can not have interference effect to the generation of high-frequency microwave, it is ensured that the independence of two band microwaves
Produce.
In the above-mentioned technical solutions, as shown in Fig. 1~2, the high-frequency microwave device includes：
High frequency Relativistic backward-wave oscillator 2, negative electrode 1 and high band device beam ripple interaction region are sequentially coaxially provided with it
8；The outside of the high frequency Relativistic backward-wave oscillator 2 is provided with the first guiding magnet 4；First guiding magnet 4 has cylinder
Cavity, the effect of the first guiding magnet 4 is to enter high frequency by negative electrode according to introduction by magnetic field intense relative annular electron beam caused by magnet
Relativistic backward-wave oscillator interaction chamber, produce high-frequency high-power microwave；
The low frequency microwave device includes：
Low frequency Relativistic backward-wave oscillator 5, low-frequency range device beam ripple interaction region 9 is provided with it；The low-frequency phase pair
It is coaxially connected in the end of high frequency Relativistic backward-wave oscillator 2 by backward wave oscillator 5；The low frequency Relativistic backward-wave oscillator 5
Outside be provided with the second guiding magnet 7；Second guiding magnet 7 has a cylindrical cavity, second guide magnet 7 effect be by
Shaken according to introduction by magnetic field intense relative annular electron beam caused by magnet by high frequency Relativistic backward-wave oscillator into low frequency the theory of relativity backward wave
Device interaction chamber is swung, produces low frequency high power microwave；
In this technical scheme, intense relative annular electron beam caused by negative electrode 1 enters under the guiding of the first guiding magnet 4
High band device beam ripple interaction region 8, the radiation production of intense relative annular electron beam 3 transmitted in high frequency Relativistic backward-wave oscillator 2
The High-Power Microwave of raw a certain wave band；First guiding magnet 4 of high frequency Relativistic backward-wave oscillator 2 shakes with low frequency the theory of relativity backward wave
The the second guiding magnet for swinging device 5 produces a step transitions formula axial magnetic field in joining place, under this introduction by magnetic field, annular high current electricity
The inner and outer diameter of beamlet expands, and enters the low-frequency range device beam ripple interaction region 9 of low-frequency range Relativistic backward-wave oscillator 2,
The radiation of intense relative annular electron beam 6 transmitted in low frequency Relativistic backward-wave oscillator 5 produces the High-Power Microwave of another wave band.Annular
The critical wavelength for the high frequency Relativistic backward-wave oscillator that strong current electron beam first passes through thereafter passes through less than intense relative annular electron beam
Low frequency Relativistic backward-wave oscillator caused by low frequency high power microwave wavelength, it is high caused by low frequency Relativistic backward-wave oscillator
Power microwave wavelength is more than the diameter of high frequency Relativistic backward-wave oscillator, therefore the generation tool that low frequency microwave can not be to high-frequency microwave
There is interference effect, it is ensured that the independent generation of two band microwaves.
In the above-mentioned technical solutions, the high band device beam ripple interaction region 8 is made up of multiple first slow-wave structures；Institute
Multiple first slow-wave structures are stated by multiple spaced first annular 10 groups of blades for being sequentially distributed since emission of cathode end
Into；
The low-frequency range device beam ripple interaction region 9 is made up of multiple second slow-wave structures；The multiple second slow wave knot
Structure is made up of multiple spaced second annular blades 11 being sequentially distributed.
In the above-mentioned technical solutions, the diameter of first slow-wave structure is less than the diameter of the second slow-wave structure.
In another embodiment, the high band device beam ripple interaction region is made up of 14 the first slow-wave structures, the
The Cycle Length A of one slow-wave structure is 3.3mm, diameter B is 7mm, chamber depth C is 0.75mm；The low-frequency range device beam ripple interaction
It is made up of with area 8 the second slow-wave structures, the Cycle Length D of the second slow-wave structure is 20mm, diameter E is 22mm, chamber depth F is
1.4mm；The first guiding magnet and the second guiding magnet produce 1T axially directed magnetic field；The negative electrode is that graphite is cloudy
Pole, the annular high current electronics that current strength caused by field emission graphite cathode is 1.5kA under negative and positive pole tension 300kV drivings
Beam, intense relative annular electron beam inner and outer diameter are respectively 5.2mm and 5.6mm；Enter high band under the guiding of the first guiding magnet
Device beam ripple interaction region, and the High-Power Microwave for producing that Ka audio range frequencies are 38GHz is radiated, guide magnet and second first
The joining place of magnet is guided to produce a step transitions formula axial magnetic field, it is assumed that the position at intense relative annular electron beam transmitting is 0, rank
Terraced transition formula axis magnetic field is as shown in table 1.Under this introduction by magnetic field, intense relative annular electron beam inner and outer diameter expands as 16mm
And 18mm, and enter low-frequency range Relativistic backward-wave oscillator interaction region 9, in voltage 300kV, current strength is 1.5kA ring
Shape strong current electron beam radiates the Gao Gong for producing that C-band frequency is 4.8GHz in low-frequency range device beam ripple interaction region transmitting procedure
Rate microwave.
1 across waveband double-frequency Relativistic backward-wave oscillator of table guides Distribution of Magnetic Field
| Axial distance (cm) | 0 | 8 | 9 | 10 | 12 | 15 | 20 | 23 | 27 |
| Axial magnetic field strength (T) | 1 | 1 | 0.3 | 0.5 | 0.8 | 1 | 1 | 1 | 1 |
| Radial magnetic field intensity (T) | 0 | 0.15 | 0.2 | 0.15 | 0.1 | 0 | 0 | 0.5 | 0.9 |
The critical wavelength that TM01 modes microwaves are transmitted in Ka wave band Relativistic backward-wave oscillators is 9.13mm, low-frequency range device
The wavelength that radiation produces the High-Power Microwave that C-band frequency is 4.8GHz in beam ripple interaction region transmitting procedure is 6.25cm, because
This C-band frequency is that 4.8GHz High-Power Microwave cannot be introduced into high frequency Relativistic backward-wave oscillator, it is impossible to is formed to Ka wave bands
Disturbed caused by High-Power Microwave.Therefore Ka wave bands and C-band High-Power Microwave can be produced independently.
By the axially directed magnetic field of step transitions formula in across the waveband double-frequency Relativistic backward-wave oscillator of the present invention, make annular
Electron beam can realize the axial direction transmission of two kinds of diameters.In high-frequency microwave device and low frequency microwave device transition portion, pass through increasing
Radial magnetic field field strength is added to realize the axial direction transmission of circulating electron beam diameter from small to large.High-frequency microwave device and low frequency microwave device
Guiding magnetic field is produced by each bootstrap magnet respectively, a ladder is produced in high-frequency microwave device and low frequency microwave device transition portion
The axially directed magnetic field of transition formula, realize the generation across waveband double-frequency High-Power Microwave.
Although embodiment of the present invention is disclosed as above, it is not restricted in specification and embodiment listed
With it can be applied to various suitable the field of the invention completely, can be easily for those skilled in the art
Other modification is realized, therefore under the universal limited without departing substantially from claim and equivalency range, it is of the invention and unlimited
In specific details and shown here as the legend with description.
Claims (5)
1. a kind of across waveband double-frequency Relativistic backward-wave oscillator, it is characterised in that including the high-frequency microwave devices sequentially coaxially set
Part and low frequency microwave device；
The wavelength of High-Power Microwave caused by the low frequency microwave device is more than the diameter of high-frequency microwave device；
The high-frequency microwave device includes：
High frequency Relativistic backward-wave oscillator, negative electrode and high band device beam ripple interaction region are sequentially coaxially provided with it；It is described
The outside of high frequency Relativistic backward-wave oscillator is provided with the first guiding magnet；
The low frequency microwave device includes：
Low frequency Relativistic backward-wave oscillator, low-frequency range device beam ripple interaction region is provided with it；Low frequency the theory of relativity backward wave
Oscillator is coaxially connected in the end of high frequency Relativistic backward-wave oscillator；The outside setting of the low frequency Relativistic backward-wave oscillator
There is the second guiding magnet；
The high band device beam ripple interaction region is made up of multiple first slow-wave structures；The multiple first slow-wave structure by from
Emission of cathode end starts the multiple spaced first annular blade compositions being sequentially distributed；
The low-frequency range device beam ripple interaction region is made up of multiple second slow-wave structures；The multiple second slow-wave structure by according to
Multiple spaced second annular blade compositions of secondary distribution；
The diameter of first slow-wave structure is less than the diameter of the second slow-wave structure；
It is vacuum chamber in the high-frequency microwave device and low frequency microwave device.
2. across waveband double-frequency Relativistic backward-wave oscillator as claimed in claim 1, it is characterised in that the high band device beam
Ripple interaction region is made up of 14 the first slow-wave structures, and the Cycle Length of the first slow-wave structure is 3.3mm, a diameter of 7mm, chamber are deep
For 0.75mm.
3. across waveband double-frequency Relativistic backward-wave oscillator as claimed in claim 2, it is characterised in that the low-frequency range device beam
Ripple interaction region is made up of 8 the second slow-wave structures, and the Cycle Length of the second slow-wave structure is 20mm, a diameter of 22mm, chamber are deep
For 1.4mm.
4. across waveband double-frequency Relativistic backward-wave oscillator as claimed in claim 3, it is characterised in that the first guiding magnet
1T axially directed magnetic field is produced with the second guiding magnet.
5. across waveband double-frequency Relativistic backward-wave oscillator as claimed in claim 4, it is characterised in that the negative electrode is that graphite is cloudy
Pole, the annular high current electronics that current strength caused by field emission graphite cathode is 1.5kA under negative and positive pole tension 300kV drivings
Beam, intense relative annular electron beam inner and outer diameter are respectively 5.2mm and 5.6mm；Enter high band under the guiding of the first guiding magnet
Device beam ripple interaction region, and the High-Power Microwave for producing that Ka audio range frequencies are 38GHz is radiated, guide magnet and second first
The joining place of magnet is guided to produce a step transitions formula axial magnetic field, in the presence of this magnetic field, inside and outside intense relative annular electron beam
Enlarged-diameter is 16mm and 18mm, and enters low-frequency range device beam ripple interaction region, and it is 4.8GHz to radiate generation C-band frequency
High-Power Microwave.
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| CN106298407A (en) * | 2016-09-09 | 2017-01-04 | 中国工程物理研究院应用电子学研究所 | A kind of three controlled high-power pulsed ion beams of frequency |
| CN106971929B (en) * | 2017-04-26 | 2018-08-14 | 中国工程物理研究院应用电子学研究所 | The controllable Relativistic backward-wave oscillator of across the wave band multifrequency of one kind |
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| CN111540656B (en) * | 2020-04-02 | 2023-03-31 | 中国工程物理研究院应用电子学研究所 | S and C waveband double-frequency controllable high-power microwave device |
| CN111540657B (en) * | 2020-04-02 | 2022-03-29 | 中国工程物理研究院应用电子学研究所 | 8GHz high power microwave device |
| CN111540660B (en) * | 2020-04-02 | 2023-03-28 | 中国工程物理研究院应用电子学研究所 | C, X wave band double-frequency compact high-power microwave device |
| CN113053707B (en) * | 2021-03-18 | 2022-07-22 | 电子科技大学 | Double-frequency relativistic backward wave tube using plasma cathode electron gun |
| CN115241719B (en) * | 2022-07-21 | 2023-07-21 | 中国人民解放军国防科技大学 | Cross-four-band relativistic Cerenkov oscillator based on magnetic field tuning |
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