CN116263477A - Superconducting quantum bit junction resistance measuring method and system - Google Patents

Superconducting quantum bit junction resistance measuring method and system Download PDF

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Publication number
CN116263477A
CN116263477A CN202210590067.XA CN202210590067A CN116263477A CN 116263477 A CN116263477 A CN 116263477A CN 202210590067 A CN202210590067 A CN 202210590067A CN 116263477 A CN116263477 A CN 116263477A
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probe
oxide layer
electrode
displacement
josephson junction
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张辉
张福
刘尧
金贤胜
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Origin Quantum Computing Technology Co Ltd
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Origin Quantum Computing Technology Co Ltd
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Priority to PCT/CN2022/138437 priority Critical patent/WO2023109771A1/en
Publication of CN116263477A publication Critical patent/CN116263477A/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/08—Measuring resistance by measuring both voltage and current
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
    • Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

The invention discloses a superconducting quantum bit junction resistance measuring method and a superconducting quantum bit junction resistance measuring system. Comprising contacting one of the first probe and the second probe with a first oxide layer on the surface of the first electrode, and inserting the other into the first oxide layer and into contact with the first electrode based on pressure monitoring; electrically breaking down the first oxide layer by the first probe and the second probe; contacting one of the third probe and the fourth probe with the second oxide layer on the surface of the second electrode, and monitoring that the other one just pierces the second oxide layer and contacts the second electrode based on pressure; electrically breaking down the second oxide layer by a third probe and a fourth probe; resistance is measured between the other of the first and second probes and the other of the third and fourth probes. By means of the mode, the probe is accurate in place, and the interference of the oxidation layer on the junction resistance can be reduced better by means of electric breakdown on the oxidation layer, so that the junction resistance is measured accurately.

Description

Superconducting quantum bit junction resistance measuring method and system
Technical Field
The invention belongs to the field of quantum information, in particular to the field of quantum chip detection, and particularly relates to a superconducting quantum bit junction resistance measurement method and system.
Background
The key structure on the superconducting quantum chip is a superconducting qubit, and the key structure of the superconducting qubit is a Josephson junction. Josephson junctions are special devices formed by isolating two electrodes with a thin insulator between them. In order to ensure the performance of the superconducting quantum chip, the frequency parameter of the superconducting quantum bit must be strictly controlled, the normal temperature resistance characterization of the superconducting quantum bit is important information of the reaction frequency parameter, and the resistance of the Josephson junction is the key of the normal temperature resistance characterization of the superconducting quantum bit, so that the resistance of the Josephson junction needs to be accurately measured.
At present, a resistance measurement scheme specially aiming at a superconducting quantum chip is not available, and at present, the resistance measurement of the superconducting quantum chip adopts a traditional resistance measurement scheme of a semiconductor chip, namely, a probe is adopted to be pricked into an internal structure of a device to form direct contact to measure the resistance, mainly because an oxide layer is formed on an electrode of a Josephson junction, and the oxide layer is not expected to be generated, but is difficult to remove, so that the resistance between the electrodes can be accurately obtained through the oxide layer, otherwise, the existence of the oxide layer can interfere with a measurement result. However, the electrode of the josephson junction is pricked by the probe, which causes the performance loss of superconducting qubits, but the resistance measurement scheme using the semiconductor chip inevitably leads to the probe pricking the electrode, and even the electrode is pricked by the serious probe, so that the josephson junction is directly damaged. The conventional resistance measurement scheme of the semiconductor chip is not suitable for the superconducting quantum chip.
Summary of the invention
It is an object of the present invention to provide at least one of a probe device, a superconducting qubit junction resistance measurement device, a measurement system, a circuit and a method to solve the problem in the prior art that a probe would stick into the electrode of a josephson junction, to avoid damaging the electrode by the probe, so that no loss of superconducting qubit performance is caused, and to enable accurate measurement of the josephson junction resistance.
It is still another object of the present invention to provide an electrical contact connection method and system to solve the problem of the prior art that the probe is not easily in precise contact with the target film.
It is yet another object of the present invention to provide a quantum chip non-destructive inspection probe device to solve the problem of the prior art that the probe cannot be precisely controlled.
It is yet another object of the present invention to provide a quantum chip nondestructive testing probe station to solve the problem of the prior art that it is not possible to accurately measure the resistance of superconducting qubit junctions.
To achieve the above and other related objects, the present invention provides the following examples:
18. example 1 provided by the present invention: a probe device is used for measuring a superconducting quantum chip and comprises at least one group of probe groups, a probe control mechanism and a power supply module;
The probe set comprises a first probe and a second probe which are mutually independent;
the probe control mechanism is used for controlling the first probe and the second probe to be needled down to one side of a Josephson junction on a superconducting quantum chip, so that the first probe and the second probe penetrate into but do not penetrate through an oxide layer on the electrode surface on one side of the Josephson junction;
the power supply module is used for applying an electric breakdown signal between the first probe and the second probe so as to break down an oxide layer below two penetration positions on one side of the Josephson junction, so that the first probe and the second probe form conductive connection with an electrode on one side of the Josephson junction.
19. Example 19 provided by the present invention: including example 18, wherein the probe manipulation mechanism includes at least one set of displacement adjustment assemblies, the displacement adjustment assemblies being the same number as the probe sets;
the displacement adjusting assembly is respectively connected with the first probe and the second probe and is respectively used for controlling the first probe and the second probe to displace in the multiple degree of freedom direction and lower the needle to one side of the Josephson junction.
20. Example 20 provided by the present invention: including example 19, wherein the displacement adjustment assembly includes a first displacement stage having a first displacement accuracy, the first displacement stage having one end fixed and the other end connected to the first probe and the second probe, respectively.
21. Example 21 provided by the present invention: including example 20, the displacement adjustment assembly further includes a second displacement stage having a second displacement accuracy, the first displacement stage having one end secured to one end of the second displacement stage and the second displacement stage having another end secured.
22. Example 22 provided by the present invention: example 21 is included, wherein the first displacement accuracy is higher than the second displacement accuracy.
23. Example 23 provided by the present invention: example 21 is included, wherein the displacement directions of the first displacement stage and the second displacement stage are both spatial three-dimensional degrees of freedom directions.
24. Example 24 provided by the present invention: including example 20, wherein the displacement adjustment assembly further includes a probe arm coupled to another end of the first displacement stage, the first displacement stage coupled to the first probe and the second probe, respectively, via the probe arm.
25. Example 25 provided by the present invention: example 18 is included, wherein the probe manipulation mechanism includes a micro force sensor for detecting a needle deployment force of the probe set.
26. Example 26 provided by the present invention: example 25 is included, wherein the micro force sensor is coupled to a probe of the probe set.
27. Example 27 provided by the present invention: example 18 is included, wherein all probes within the probe set have the same needle down force.
28. Example 28 provided by the present invention: example 18 includes wherein the first probe and the second probe have different needle placement forces and the third probe and the fourth probe have different needle placement forces.
29. Example 29 provided by the present invention: example 27 is included, wherein the needle setting force is 100 μn-1000 μn.
30. Example 30 provided by the present invention: example 18 is included, wherein tip diameters of the first probe and the second probe are 100nm-500nm.
31. Example 31 provided by the present invention: example 18 is included, wherein the voltage of the electrical breakdown signal is 0.5V to 5V and the current is not higher than 10 μa.
32. Example 32 provided by the present invention: including any one of examples 18 to 31, wherein the probe set is two sets including a first probe, a second probe, a third probe, and a fourth probe, the first probe and the second probe being one set, and the third probe and the fourth probe being one set.
33. Example 33 provided by the present invention: including example 32, wherein the probe manipulation mechanism is further for manipulating the third probe and the fourth probe down to the other side of the josephson junction such that the third probe and the fourth probe penetrate but do not penetrate the oxide layer of the other side electrode surface of the josephson junction;
The power supply module is further configured to apply an electrical breakdown signal between the third probe and the fourth probe to break down the oxide layer under two penetration sites on the other side of the josephson junction, such that the third probe and the fourth probe form an electrically conductive connection with an electrode on the other side of the josephson junction.
34. Example 34 provided by the present invention: a superconducting qubit junction resistance measurement device comprising the probe device of example 33, wherein the measurement device further comprises a support structure and a chip displacement stage; the probe control mechanism is fixed on the supporting structure; the chip displacement table is used for bearing the superconducting quantum chip to be detected, and the probe control mechanism operates the first probe and the second probe to be needled down to the superconducting quantum chip positioned on the surface of the chip displacement table.
35. Example 35 provided by the present invention: including example 34, wherein the support structure comprises a support platform, a support column, and a support plate;
the probe control mechanism is arranged on the supporting plate;
the support plate is fixed at one end of the support column, and the other end of the support column is fixed on the support platform.
36. Example 36 provided by the present invention: example 35 is included, wherein the probe manipulation mechanism includes a set of displacement adjustment assemblies including a first displacement stage having a first displacement accuracy, the first displacement stage being secured to the support plate.
37. Example 37 provided by the present invention: including example 35, wherein the chip displacement table is fixed on the supporting platform, is used for driving the superconductive quantum chip to rotate horizontally in a plane parallel to the supporting platform.
38. Example 38 provided by the present invention: including example 35, wherein the probe apparatus includes two sets of displacement adjustment assemblies and four probes respectively located on the two sets of displacement adjustment assemblies;
the two groups of displacement adjusting assemblies are respectively a first displacement adjusting assembly, a second displacement adjusting assembly, a third displacement adjusting assembly and a fourth displacement adjusting assembly; the four probes are respectively a first probe, a second probe, a third probe and a fourth probe;
the two support plates are respectively fixed on one of the support plates through the first displacement adjusting assembly and the second displacement adjusting assembly, and the third probe and the fourth probe are respectively fixed on the other support plate through the third displacement adjusting assembly and the fourth displacement adjusting assembly;
The chip displacement table is positioned between the two supporting plates.
39. Example 39 provided by the present invention: a superconducting qubit junction resistance measurement system comprising a junction resistance measurement module and the probe apparatus of example 38;
the junction resistance measurement module is to measure resistance between one of the first and second probes and one of the third and fourth probes.
40. Example 40 provided by the present invention: a superconducting qubit junction resistance measurement method, comprising:
setting a first probe, a second probe, a third probe and a fourth probe;
manipulating the first and second probes down to one side of a josephson junction on a superconducting quantum chip, and manipulating the third and fourth probes down to the other side of the josephson junction so that the first and second probes, the third and fourth probes respectively penetrate but do not penetrate oxide layers on electrode surfaces on both sides of the josephson junction;
applying an electrical breakdown signal between the first and second probes and between the third and fourth probes to break down the oxide layer under two penetration sites on each side of the josephson junction so that the first and second probes, the third and fourth probes form an electrically conductive connection with the electrodes on both sides of the josephson junction respectively;
Resistance is measured between one of the first probe and the second probe and one of the third probe and the fourth probe.
41. Example 41 provided by the present invention: a superconducting qubit junction resistance measurement method, wherein the qubit comprises a josephson junction comprising a first electrode and a second electrode, the measurement method comprising:
electrically breaking down a first oxide layer formed on the surface of the first electrode;
electrically breaking down a second oxide layer formed on the surface of the second electrode;
applying a test current through the broken down first oxide layer, the josephson junction and the broken down second oxide layer, measuring a voltage between the broken down first oxide layer and the broken down second oxide layer;
and determining the superconducting quantum bit junction resistance according to the voltage and the test current.
42. Example 42 provided by the present invention: including example 41, wherein the step of electrically breaking down the first oxide layer formed on the first electrode surface comprises:
contacting a first probe and a second probe with the first oxide layer;
a potential difference is formed between the first probe and the second probe to cause the first oxide layer to achieve electrical breakdown.
43. Example 43 provided by the present invention: including example 42, wherein forming a potential difference between the first probe and the second probe to cause the first oxide layer to achieve electrical breakdown, further includes:
a first protection voltage is applied to the second electrode.
44. Example 44 provided by the present invention: example 43 is included, wherein a potential difference between the first protection voltage and a breakdown voltage applied on the first oxide layer is less than a voltage of breakdown of a josephson junction barrier layer. The barrier layer of a josephson junction typically has a breakdown voltage of less than 3V-5V at 1-2nm, according to applicant's manufacturing process and design parameters. Therefore, the first protection voltage may be less than the breakdown voltage, for example, less than 3V.
45. Example 45 provided by the present invention: example 42 is included, wherein one of the first probe or the second probe penetrates the first oxide layer.
46. Example 46 provided by the present invention: example 45 is included, wherein a penetration depth of one of the first probe or the second probe is a thickness of the first oxide layer.
47. Example 47 provided by the present invention: example 45 includes, wherein the hardness of the probe material penetrating into the first oxide layer is greater than the hardness of the first oxide layer.
48. Example 48 provided by the present invention: example 45 is included, wherein the other of the first probe or the second probe is in contact with the first oxide layer upper surface.
49. Example 49 provided by the present invention: example 48 is included, wherein a hardness of a probe material in contact with the upper surface of the first oxide layer is less than a hardness of the first oxide layer.
50. Example 50 provided by the present invention: including example 41, wherein the step of electrically breaking down the second oxide layer formed on the surface of the second electrode includes:
contacting a third probe and a fourth probe with the second oxide layer;
a potential difference is formed between the third probe and the fourth probe to cause the second oxide layer to achieve electrical breakdown.
51. Example 51 provided by the present invention: including example 50, wherein forming a potential difference between the third probe and the fourth probe to cause the second oxide layer to achieve electrical breakdown, further includes:
a second protection voltage is applied to the first electrode.
52. Example 52 provided by the present invention: example 51 is included, wherein a potential difference between the second protection voltage and a breakdown voltage applied on the second oxide layer is less than a voltage of breakdown of a josephson junction barrier layer. The voltage application amount of the second protection voltage may be referred to as the application amount of the first protection voltage in example 44.
53. Example 53 provided by the present invention: example 50 is included, wherein one of the third probe or the fourth probe is inserted into the second oxide layer.
54. Example 54 provided by the present invention: example 53 is included, wherein a penetration depth of one of the third probe or the fourth probe is a thickness of the second oxide layer.
55. Example 55 provided by the present invention: example 53 is included, wherein a hardness of a probe material penetrating into the second oxide layer is greater than a hardness of the second oxide layer.
56. Example 56 provided by the present invention: example 53 is included, wherein the other of the third probe or the fourth probe is in contact with the second oxide layer upper surface.
57. Example 57 provided by the present invention: example 56 includes, wherein a hardness of a probe material in contact with an upper surface of the second oxide layer is less than a hardness of the second oxide layer.
58. Example 58 provided by the present invention: including example 42, wherein the step of electrically breaking down the second oxide layer formed on the second electrode surface comprises:
moving the first probe to contact the first probe and a third probe with the second oxide layer;
A potential difference is formed between the first probe and the third probe to cause the second oxide layer to achieve electrical breakdown.
59. Example 59 provided by the present invention: including any of examples 41 to 58, wherein the first electrode and the second electrode are one of:
capacitor plate, ground plate.
60. Example 60 provided by the present invention: a superconducting qubit junction resistance measurement system, wherein the qubit comprises a josephson junction comprising a first electrode and a second electrode, the measurement system comprising:
a first probe unit for contacting a first oxide layer formed on the surface of the first electrode;
a second probe unit for contacting a second oxide layer formed on the surface of the second electrode; and
a test meter unit connected with the first and second probe units to apply a voltage to achieve an electrical breakdown, and to apply a test current through the broken down first oxide layer, the josephson junction and the broken down second oxide layer and to measure the voltage between the broken down first oxide layer and the broken down second oxide layer.
61. Example 61 provided by the present invention: a method of electrical contact connection, comprising:
Moving the probe to the first film layer, and monitoring the pressure born by the probe in real time;
monitoring the first abrupt change in pressure and continuing to move the probe;
monitoring the second mutation in the pressure and stopping movement of the probe when the second mutation occurs, wherein the probe is in contact with the second membrane layer.
62. Example 62 provided by the present invention: example 61 is included, wherein the second film is an electrode of a josephson junction and the first film is an oxide layer of a surface of the electrode.
63. Example 63 provided by the present invention: example 61 is included, wherein the first abrupt change is a change in pressure from 0 to 0.1 to 10 μn.
64. Example 64 provided by the present invention: example 63 is included, wherein the second mutation is a first mutation where the pressure becomes 10-100 times.
65. Example 65 provided by the present invention: examples 63 and 64 are included, wherein the probe movement speed is 10nm/s to 1 μm/s.
66. Example 66 provided by the present invention: example 61 is included, wherein a thickness of the first film layer is between 0.1nm and 5 nm.
67. Example 67 provided by the present invention: an electrical contact connection system comprising:
the displacement adjusting assembly is arranged on the micro force sensor and the probe arranged on the micro force sensor;
And the probe can move relative to the chip displacement table under the drive of the displacement adjusting component.
68. Example 68 provided by the present invention: including example 67, further comprising: the processing module receives the pressure detected by the micro force sensor in real time and at least monitors the pressure value when the pressure is suddenly changed, and the processing module also controls the movement of the displacement adjusting assembly according to the pressure value when the pressure is suddenly changed.
69. Example 69 provided by the present invention: example 67 is included, wherein the probe is disposed on a head of a micro force sensor.
70. Example 70 provided by the present invention: example 67 is included, wherein the probe is a tungsten needle or tungsten alloy needle, the surface of the probe may be electroplated with a protective layer, and the tip diameter of the probe is between 0.1 and 50 μm.
71. Example 71 provided by the present invention: a probe device is used for measuring a superconducting quantum chip and comprises a first probe, a second probe, a probe control mechanism and a chip displacement table;
the probe control mechanism is used for controlling the first probe and the second probe to be needled down to the opposite side of the Josephson junction on the superconducting quantum chip, and enabling the first probe and the second probe to just puncture through an oxide layer on the surface of the Josephson junction electrode;
The chip displacement platform is used for bearing the superconducting quantum chip.
72. Example 72 provided by the present invention: including example 71, wherein the probe manipulation mechanism includes a displacement adjustment assembly, a micro force sensor fixed on the displacement adjustment assembly, the first probe and the second probe are respectively fixed on the corresponding micro force sensor.
73. Example 73 provided by the present invention: including example 72, further comprising: the processing module receives the pressure detected by the micro force sensor in real time and at least monitors the pressure value when the pressure is suddenly changed, and the processing module also controls the movement of the displacement platform according to the pressure value when the pressure is suddenly changed.
74. Example 74 provided by the present invention: a superconducting qubit junction resistance measurement system comprising:
the probe device of any one of examples 71-73, and
and the junction resistance measurement module is respectively connected to the first probe and the second probe.
75. Example 75 provided by the present invention: a superconducting qubit junction resistance measurement circuit, the josephson junction comprising a first electrode and a second electrode, the superconducting qubit junction resistance measurement circuit comprising:
The first probe is electrically connected with the first electrode, a first oxide layer is formed on the surface of the first electrode, and the first probe just penetrates through the first oxide layer to be in electrical contact with the first electrode;
the second probe is electrically connected with the second electrode, a second oxide layer is formed on the surface of the second electrode, and the second probe just penetrates through the second oxide layer to be in electrical contact with the second electrode;
and the junction resistance measurement module is electrically connected with the first probe and the second probe respectively and is used for applying electric signals to the first probe and the second probe so as to measure the resistance of the Josephson junction.
76. Example 76 provided by the present invention: a superconducting qubit junction resistance measurement method comprising:
respectively enabling a first probe and a second probe to be downwards needled to the opposite side of a Josephson junction on a superconducting quantum chip, enabling the first probe to just puncture a first oxide layer on the surface of a first electrode of the Josephson junction, and enabling the second probe to just puncture a second oxide layer on the surface of a second electrode of the Josephson junction;
applying an electrical signal to the first and second probes, and measuring the resistance of the josephson junction.
77. Example 77 provided by the present invention: including example 76, wherein the step of causing the first probe to drop onto the superconducting quantum chip and pierce just the first oxide layer of the josephson junction first electrode surface comprises:
moving the first probe to a first oxide layer on the surface of a first electrode of the Josephson junction, and monitoring the pressure born by the first probe in real time;
monitoring the first abrupt change in pressure and continuing to move the first probe;
monitoring a second abrupt change in the pressure and stopping movement of the first probe when the second abrupt change occurs, wherein the first probe is in contact with the first electrode.
78. Example 78 provided by the present invention: including example 76, wherein the step of causing the second probe to drop onto the superconducting quantum chip and pierce just the second oxide layer of the josephson junction second electrode surface comprises:
moving the second probe to a second oxide layer on the surface of a second electrode of the Josephson junction, and monitoring the pressure born by the second probe in real time;
monitoring the first abrupt change in pressure and continuing to move the second probe;
monitoring a second abrupt change in the pressure and stopping movement of a second probe when the second abrupt change occurs, wherein the second probe is in contact with the second electrode.
79. Example 79 provided by the present invention: examples 77 or 78 are included, wherein the first abrupt change is a change in pressure from 0 to 0.1 to 10 μn.
80. Example 80 provided by the present invention: example 79 is included, wherein the second mutation is a first mutation where the pressure becomes 10-100 times.
81. Example 81 provided by the present invention: examples 77 or 78 are included, wherein the first and second probes have a moving speed of 10nm/s to 1 μm/s.
82. Example 82 provided by the present invention: a superconducting qubit junction resistance measurement method comprising:
contacting one of the first probe and the second probe with a first oxide layer on the surface of a first electrode, and penetrating the other into the first oxide layer and contacting the first electrode based on pressure monitoring;
electrically breaking down the first oxide layer by the first probe and the second probe;
contacting one of the third probe and the fourth probe with a second oxide layer on the surface of a second electrode, and penetrating the other into the second oxide layer and contacting the second electrode based on pressure monitoring;
electrically breaking down the second oxide layer by the third probe and the fourth probe;
a resistance is measured between the other of the first probe and the second probe and the other of the third probe and the fourth probe.
83. Example 2 provided by the present invention: including example 82, wherein the inserting the other into the first oxide layer and into contact with the first electrode based on pressure monitoring includes:
moving the other of the first probe and the second probe towards the first oxide layer, and monitoring the pressure exerted by the other of the first probe and the second probe in real time;
monitoring a first abrupt change in the pressure and continuing to move the other of the first and second probes;
a second abrupt change in the pressure is monitored and movement of the other of the first and second probes is stopped when the second abrupt change occurs, while the other of the first and second probes is in contact with the first electrode.
84. Example 3 provided by the present invention: including example 82, wherein the inserting the other into the second oxide layer and into contact with the second electrode based on pressure monitoring includes:
moving the other of the third probe and the fourth probe towards the second oxide layer, and monitoring the pressure exerted by the other of the third probe and the fourth probe in real time;
monitoring the first abrupt change in pressure and continuing to move the other of the third probe and the fourth probe;
A second mutation in the pressure is monitored and movement of the other of the third and fourth probes is stopped when the second mutation occurs, while the other of the third and fourth probes is in contact with the second electrode.
85. Example 4 provided by the present invention: examples 2 or 3 are included, wherein the first mutation is a pressure change from 0 to 0.1 to 10 μN.
86. Example 5 provided by the present invention: example 3 is included, wherein the second mutation is a first mutation where the pressure becomes 10-100 times.
87. Example 6 provided by the present invention: examples 2 or 3 are included, wherein a moving speed of the other of the first probe and the second probe, and the other of the third probe and the fourth probe is 10nm/s to 1 μm/s.
88. Example 7 provided by the present invention: including example 82, wherein the step of electrically breaking down the first oxide layer by the first probe and the second probe comprises:
a potential difference is formed between the first probe and the second probe to cause the first oxide layer to achieve electrical breakdown.
89. Example 8 provided by the present invention: including example 7, wherein forming a potential difference between the first probe and the second probe to cause the first oxide layer to achieve electrical breakdown, further includes:
A first protection voltage is applied across the second electrode.
90. Example 9 provided by the present invention: including example 82, wherein the step of electrically breaking down the second oxide layer by the third probe and the fourth probe comprises:
a potential difference is formed between the third probe and the fourth probe to cause the second oxide layer to achieve electrical breakdown.
91. Example 10 provided by the present invention: including example 7, wherein forming a potential difference between the third probe and the fourth probe to cause the second oxide layer to achieve electrical breakdown, further includes:
a second protection voltage is applied across the first electrode.
92. Example 11 provided by the present invention: examples 7 or 9 are included, wherein a potential difference between the first protection voltage and a breakdown voltage applied on the first oxide layer is smaller than a voltage of breakdown of the josephson junction barrier layer. The voltage application amount of the second protection voltage may be referred to as the application amount of the first protection voltage in example 44.
93. Example 12 provided by the present invention: example 82 is included, wherein one of the first probe and the second probe is the same probe as one of the third probe and the fourth probe.
94. Example 13 provided by the present invention: a superconducting qubit junction resistance measurement system, comprising:
the electrical contact connection system comprises a first probe, a second probe and a third probe, wherein the first probe is used for being matched with the second probe and/or the third probe, the electrical contact connection system is used for enabling the second probe to penetrate into a first oxide layer, the penetration depth is the thickness of the first oxide layer, and the electrical contact connection system is also used for enabling the third probe to penetrate into a second oxide layer, and the penetration depth is the thickness of the second oxide layer; and
a test meter unit connected to the first, second and third probes for applying a voltage to achieve an electrical breakdown, and for applying a test current through the broken down first oxide layer, the josephson junction and the broken down second oxide layer and measuring a voltage between the broken down first oxide layer and the broken down second oxide layer.
95. Example 14 provided by the present invention: including example 13, wherein the electrical contact-connection system further comprises:
and the displacement adjusting assembly is arranged on the micro force sensor on the displacement adjusting assembly, and each probe is correspondingly arranged on one micro force sensor.
96. Example 15 provided by the present invention: including example 14, wherein the electrical connection system further comprises:
the first probe, the second probe and the third probe can move relative to the chip displacement table under the drive of the displacement adjusting assembly.
97. Example 16 provided by the present invention: including example 14, wherein the superconducting qubit junction resistance measurement system further comprises: the processing module is used for receiving the pressure detected by the micro force sensor in real time and at least monitoring the pressure value when the pressure is suddenly changed, and the processing module is also used for controlling the movement of the displacement adjusting assembly according to the pressure value when the pressure is suddenly changed.
98. Example 98 provided by the present invention: including example 13, wherein the electrical contact-connection system further comprises a fourth probe for mating with the third probe, the first probe for mating with the second probe.
99. Example 99 provided by the present invention: an electrical contact connection method, comprising:
contacting the first probe with the first membrane layer;
moving the second probe to the first film layer, and monitoring the resistance value between the first probe and the second probe in real time;
Monitoring the first abrupt change in the resistance value and continuing to move the second probe;
and monitoring the second mutation of the resistance value, and stopping the movement of the second probe when the second mutation occurs, wherein the second probe is in contact with the second film layer.
100. Example 100 provided by the present invention: example 99 is included, wherein the second film is an electrode of a josephson junction and the first film is an oxide layer of a surface of the electrode.
101. Example 101 provided by the present invention: example 100 is included, wherein the needle-punching position of the first probe is farther from the josephson junction than the needle-punching position of the second probe.
102. Example 102 provided by the present invention: example 99 is included, wherein the first probe is brought into contact with the first membrane layer by monitoring a pressure to which the first probe is subjected.
103. Example 103 provided by the present invention: example 99 is included, wherein the first abrupt change is a decrease in resistance from above 1mΩ to 1kΩ to 10kΩ.
104. Example 104 provided by the present invention: example 99 is included, wherein the second abrupt change is a change in resistance value from 100deg.OMEGA to 1000Ω.
105. Example 105 provided by the present invention: example 99 is included, wherein the first film layer has a thickness between 0.1nm and 5 nm.
106. Example 106 provided by the present invention: an electrical contact connection system, comprising:
the displacement adjusting assembly is arranged on the first probe and the second probe;
the first probe and the second probe are connected with the resistance monitoring module; and
and the first probe and the second probe can respectively and relatively move with the chip displacement table under the driving of the displacement adjusting assembly.
107. Example 107 provided by the present invention: example 106 is included, wherein the resistance monitoring module is to monitor the detected resistance value in real time and to control movement of the displacement adjustment assembly when an abrupt change in the resistance value occurs.
108. Example 108 provided by the present invention: example 106 is included, wherein further comprising a micro force sensor disposed on the displacement adjustment assembly, at least the first probe disposed on a head of the micro force sensor.
109. Example 109 provided by the present invention: example 106 is included, wherein the first and second probes are tungsten needles or tungsten alloy needles, the first and second probe surfaces may be electroplated with a protective layer, the first probe being thicker than the second probe.
110. Example 110 provided by the present invention: example 109 is included, wherein the first probe has a shank diameter of 10-500 μm and a tip diameter of 0.5-15 μm, and the second probe has a shank diameter of 5-50 μm and a tip diameter of 0.2-1 μm.
111. Example 111 provided by the present invention: the probe device is used for measuring a superconducting quantum chip and comprises a first probe, a second probe, a third probe, a probe control mechanism, a resistance monitoring module and a chip displacement table;
the probe control mechanism is used for controlling the first probe to be downwards needle to at least one side of a Josephson junction on the superconducting quantum chip and enabling the first probe to be in contact with an oxide layer on the electrode surface of the Josephson junction, and is also used for controlling the second probe and the third probe to be downwards needle to two sides of the Josephson junction on the superconducting quantum chip respectively and enabling the second probe and the third probe to just penetrate through the oxide layer on the electrode surface of the Josephson junction;
the first probe, the second probe and the third probe are all connected with the resistance monitoring module so as to obtain a resistance value between the first probe and the second probe and a resistance value between the first probe and the third probe;
The chip displacement platform is used for bearing the superconducting quantum chip.
112. Example 112 provided by the present invention: including example 111, wherein further comprising a fourth probe, the probe manipulation mechanism further configured to manipulate the fourth probe down to a side of the superconducting quantum chip on which the josephson junction is not down by the first probe, and to bring the fourth probe into contact with an oxide layer of an electrode surface of the josephson junction, the fourth probe being connected to the resistance monitoring module.
113. Example 113 provided by the present invention: example 112 is included, wherein the first and fourth probes have a shank diameter of 10-500 μm and a tip diameter of 0.5-15 μm, and the second and third probes have a shank diameter of 5-50 μm and a tip diameter of 0.2-1 μm.
114. Example 114 provided by the present invention: including example 112, wherein the probe manipulation mechanism includes a displacement adjustment assembly, a micro force sensor fixed on the displacement adjustment assembly, the first probe and the fourth probe are respectively fixed on the corresponding micro force sensor, and the second probe and the third probe are fixed on the displacement adjustment assembly.
115. Example 115 provided by the present invention: including example 112, further comprising: the processing module receives the pressure detected by the micro force sensor in real time and at least monitors the pressure value when the pressure is suddenly changed, and the processing module also controls the movement of the displacement platform according to the pressure value when the pressure is suddenly changed.
116. Example 116 provided by the present invention: a superconducting qubit junction resistance measurement system, comprising:
the probe device of any one of examples 111-115, and
and a junction resistance measurement module connected to the second probe and the third probe, respectively.
117. Example 117 provided by the present invention: a superconducting qubit junction resistance measurement method employing the probe apparatus of any one of examples 111-115, comprising:
respectively enabling a second probe and a third probe to be downwards needle to the opposite side of the Josephson junction on the superconducting quantum chip, and enabling the second probe and the third probe to just puncture through an oxide layer on the electrode surface of the Josephson junction;
applying an electrical signal to the second and third probes, and measuring the resistance of the josephson junction.
118. Example 118 provided by the present invention: including example 117, wherein the step of causing the second probe to drop onto the superconducting quantum chip and just puncture the oxide layer of the electrode surface of the josephson junction comprises:
contacting a first probe with a first oxide layer on one side of the josephson junction;
moving a second probe to a first oxide layer on one side of the Josephson junction, and monitoring the resistance value between the first probe and the second probe in real time;
monitoring the first abrupt change in the resistance value and continuing to move the second probe;
monitoring a second abrupt change in the resistance value and stopping movement of the second probe when the second abrupt change occurs, while the second probe is in contact with the first electrode of the josephson junction.
119. Example 119 provided by the present invention: including example 118, wherein the step of causing the third probe to drop onto the superconducting quantum chip and just puncture the oxide layer of the electrode surface of the josephson junction comprises:
contacting the first probe or the fourth probe with a second oxide layer on the other side of the josephson junction;
moving a third probe to a second oxide layer at the other side of the Josephson junction, and monitoring the resistance value between the first probe or the fourth probe and the third probe in real time;
Monitoring the first abrupt change in the resistance value and continuing to move the third probe;
monitoring the second abrupt change in the resistance value and stopping movement of the third probe when the second abrupt change occurs, while the third probe is in contact with the second electrode of the josephson junction.
120. Example 120 provided by the present invention: including any of examples 41 to 49, 60, 75-77, 82-2, 7-8, 11, 13, and 118, wherein the first oxide layer is a native oxide layer.
121. Example 121 provided by the present invention: including any of examples 41 to 49, 50-58, 60, 75-76, 78, 82, 3, 9-10, 13, and 119, wherein the second oxide layer is a native oxide layer.
122. Example 122 provided by the present invention: including example 119, wherein the needle-punching position of the first probe is farther from the josephson junction than the needle-punching position of the second probe, and the needle-punching position of the first probe or the fourth probe is farther from the josephson junction than the needle-punching position of the third probe.
123. Example 123 provided by the present invention: example 119 is included in which the pressure experienced by the first probe or the fourth probe is monitored such that the first probe or the fourth probe pierces the interface of the first film layer and the second film layer.
124. Example 124 provided by the present invention: examples 118 or 119 are included, wherein the first abrupt change is a decrease in resistance from above 10mΩ to between 10kΩ and 10mΩ.
125. Example 125 provided by the present invention: examples 118 or 119 are included, wherein the second abrupt change is a change in resistance value from 100deg.OMEGA to 1000Ω.
126. Example 126 provided by the present invention: the probe device for nondestructive testing of the quantum chip comprises a probe and a probe control mechanism;
the probe control mechanism comprises a displacement adjusting component;
the displacement adjusting assembly comprises a Z-axis displacement rough adjustment platform and a Z-axis displacement fine adjustment platform;
one end of the Z-axis displacement rough adjustment table is fixed with the Z-axis displacement fine adjustment table, and the Z-axis displacement fine adjustment table is pulled to be adjusted primarily along the Z-axis direction;
and one end of the Z-axis displacement fine adjustment table, which is far away from the Z-axis displacement coarse adjustment table, is connected with the probe, and the probe is pulled to be precisely adjusted along the Z-axis direction, so that the probe is needled down to the quantum chip to be detected.
127. Example 127 provided by the present invention: including example 126, wherein the probe manipulation mechanism further includes a support;
the Z-axis displacement rough adjustment table is slidably mounted on the support member along the Z axis.
128. Example 128 provided by the present invention: including example 127, wherein the Z-axis coarse stage comprises a micrometer shifter;
One side of the micrometer shifter is slidably arranged on the outer wall of the supporting piece along the Z axis, and the other side of the micrometer shifter is fixed with the Z axis displacement fine adjustment table.
129. Example 129 provided by the present invention: including example 128, wherein the Z-axis coarse stage further comprises an L-shaped adapter plate;
the L-shaped adapter plate is fixedly connected with the micrometer shifter;
the Z-axis displacement fine adjustment table is arranged on the upper surface of one side of the L-shaped adapter plate.
130. Example 130 provided by the present invention: example 129 is included, wherein a spacing chamber is formed between the L-shaped adapter plate and the micrometric displacer;
and the supporting piece is provided with a limit strip matched with the limit cavity.
131. Example 131 provided by the present invention: including example 129, wherein the Z-axis displacement fine tuning stage comprises a nano-displacer and a fixed end;
one end of the nano shifter is slidably arranged on the fixed end along the Z axis, and the other end of the nano shifter is connected with the probe;
the fixed end is fixedly arranged on the upper surface of the L-shaped adapter plate.
132. Example 132 provided by the present invention: including example 127, wherein the displacement adjustment assembly further comprises an XY displacement stage;
the bottom of the supporting piece is fixedly connected with the XY displacement table.
133. Example 133 provided by the present invention: example 132 is included, wherein a suction stage is provided at a bottom of the XY stage.
134. Example 134 provided by the present invention: including example 126, wherein the probe includes a grip, a needle, and a guidewire;
the clamping part is arranged on the Z-axis displacement fine adjustment table;
the needle head is inserted into the clamping part, one end of the needle head penetrates through the clamping part and extends to the upper part of the quantum chip to be detected, and the other end of the needle head is connected with the lead;
the lead is externally connected with a power module.
135. Example 135 provided by the present invention: including example 134, wherein the probe manipulation mechanism further includes a micro force sensor;
the micro force sensor is connected with the clamping part of the probe and is used for detecting the needle falling force of the probe.
136. Example 135 provided by the present invention: example 134 is included, wherein the needle forms an angle α with a plane in which the XY axis lies, and the angle α ranges from 70 ° to 85 °.
137. Example 137 provided by the present invention: a quantum chip nondestructive testing probe station, which comprises a plurality of probe devices, a supporting structure and a chip displacement station;
the support structure includes a support platform;
The chip displacement platform is arranged on the supporting platform and is used for bearing and driving the quantum chip to be detected to move;
the probe device comprises a probe and a probe control mechanism;
the probe control mechanism is arranged on the supporting structure;
the probe control mechanism comprises a Z-axis displacement fine adjustment table;
the probe is arranged on the Z-axis displacement fine adjustment table, and the Z-axis displacement fine adjustment table pulls the probe to be precisely adjusted along the Z-axis direction, and the probe is needled down to the quantum chip to be detected.
138. Example 138 provided by the present invention: including example 137, wherein the chip displacement stage comprises an XYZ three-axis displacement stage and a rotational placement stage;
the XYZ three-axis displacement platform is arranged on the supporting platform;
the rotary placement platform is arranged on the upper surface of the XYZ three-axis displacement platform and is used for bearing and driving the quantum chip to be detected to horizontally rotate in a plane parallel to the support platform.
139. Example 139 provided by the present invention: including example 137, wherein the support structure further comprises a support plate and a support column;
the supporting plate is fixedly connected with the supporting platform through the supporting column;
the probe manipulation mechanism is mounted on the support plate.
140. Example 140 provided by the present invention: example 139 is included in which two support plates are provided, and two support plates are located on both sides of the chip displacement stage.
141. Example 141 provided by the present invention: example 140 includes, wherein four of the probe devices are provided, two of the probe devices are provided on one of the support plates, and two other of the probe devices are provided on the other of the support plates.
142. Example 142 provided by the present invention: example 141 is included, wherein gaps for collision prevention are reserved between four of the probes.
143. Example 143 provided by the present invention: including example 137, wherein the probe comprises a grip, a needle, and a guidewire;
the clamping part is arranged on the Z-axis displacement fine adjustment table;
the needle head is inserted into the clamping part, one end of the needle head penetrates through the clamping part and extends to the upper part of the quantum chip to be detected, and the other end of the needle head is connected with the lead;
the lead is externally connected with a power module.
144. Example 144 provided by the present invention: including example 143, wherein, the top of syringe needle is provided with the microscope, the external intelligent terminal of microscope.
145. Example 145 provided by the present invention: example 144 is included in which the needle forms an angle α with a plane in which the XY axis lies, and the angle α ranges from 70 ° to 85 °, exposing the tip of the needle to the microscope.
146. Example 146 provided by the present invention: including example 137, wherein said probe manipulation mechanism further comprises a Z-axis displacement coarse adjustment stage;
one end of the Z-axis displacement rough adjustment table is fixed with the Z-axis displacement fine adjustment table, and the Z-axis displacement fine adjustment table is pulled to be adjusted preliminarily along the Z-axis direction.
147. Example 147 provided by the present invention: example 137 is included, wherein the probe manipulation mechanism further comprises an XY translation stage disposed at the bottom.
148. Example 148 provided by the present invention: including example 143, wherein the probe manipulation mechanism further comprises a micro force sensor;
the micro force sensor is connected with the clamping part of the probe and is used for detecting the needle falling force of the probe.
In the above example provided by the invention, the probe device applies an electric breakdown signal between two probes on the same side of the Josephson junction by manipulating the oxide layer on the electrode surface of the Josephson junction, and breaks down the oxide layer below the two probes, so that the broken oxide layer loses insulation performance, and the probes and the electrode of the Josephson junction form conductive connection.
In the above example provided by the invention, the probe device just pierces through the oxide layer on the electrode surface of the josephson junction by manipulating the probe, so that the probe and the electrode of the josephson junction form conductive connection.
In the above examples provided by the invention, the superconducting qubit junction resistance measuring device and the measuring system adopt the probe devices in some examples, so that the probes on two sides of the Josephson junction are in conductive connection with the electrodes, the resistance measurement can be realized by respectively connecting the probes on two sides of the Josephson junction by using the junction resistance measuring module, and the probe is not in direct contact with the electrodes, so that the resistance of the Josephson junction can be accurately measured while the performance loss of the superconducting qubit is avoided.
In the above examples provided in the present invention, in the superconducting qubit junction resistance measurement system, circuit and method, some probe devices in examples are adopted, so that the two side electrodes of the josephson junction are all provided with probes to form conductive connection with the probes, and the resistance measurement can be realized by respectively connecting the probes on two sides of the josephson junction with the junction resistance measurement module.
In the above example provided by the invention, the superconducting qubit junction resistance measurement method measures the voltage between the broken down oxide layers on both sides by electrically breaking down the oxide layers formed on the electrode surfaces on both sides of the josephson junction and then applying a test current through the broken down oxide layer, the josephson junction and the broken down oxide layer, and determines the junction resistance of the qubit based on the voltage and the test current. The method can avoid the influence of the oxide layer on the resistance measurement, thereby obtaining the resistance of the Josephson junction more accurately.
In the above example provided by the invention, the superconducting qubit junction resistance measurement method measures the voltage between the broken down first oxide layer and the broken down second oxide layer by first electrically breaking down the first oxide layer formed on the surface of the first electrode and electrically breaking down the second oxide layer formed on the surface of the second electrode, then applying a test current through the broken down first oxide layer, the josephson junction and the broken down second oxide layer, and determining the junction resistance of the qubit based on the voltage and the test current. The method can avoid the influence of the oxide layer on the resistance measurement, thereby obtaining the resistance of the Josephson junction more accurately.
In the above example provided by the invention, the probe can accurately needle down to the interface of the first film layer and the second film layer by monitoring the change condition of the pressure signal received by the probe in real time, so that the probe and the second film layer can be well electrically connected without damaging the second film layer.
In the above example provided by the invention, the probe can be precisely needled to the interface between the oxide layer of the electrode of the Josephson junction and the electrode, so that the probe can be well electrically connected with the electrode of the Josephson junction without damaging the electrode, and the performance of the Josephson junction is prevented from being influenced.
In the example provided by the invention, only two probes are needed, the structure is simple, the probes can be accurately needled to the interface between the oxide layers of the two electrodes of the Josephson junction and the electrodes respectively by monitoring the change condition of the pressure signals received by the probes in real time, the probes can be well electrically connected with the electrodes of the Josephson junction without damaging the electrodes, the measurement of the resistance of the Josephson junction is carried out on the basis, the operation process is simple, and the measurement accuracy can be effectively improved.
In the above example provided by the invention, the superconducting qubit junction resistance measurement method enables the probe to accurately reach the interface between the oxide layer and the electrode under the condition of pressure monitoring, then the oxide layers on two sides of the Josephson junction are electrically broken down, then test current passing through the broken down oxide layer, the Josephson junction and the broken down oxide layer is applied, voltage is measured, and the junction resistance of the qubit can be determined according to the voltage and the test current. The method can effectively improve the measurement accuracy, reduce the influence of an oxide layer and reduce the damage of the probe to the electrode as far as possible.
In the above example provided by the invention, the change condition of the resistance value between the first probe and the second probe is monitored in real time, so that the second probe can be precisely needled to the interface of the first film layer and the second film layer, and the second probe and the second film layer can be well electrically connected without damaging the second film layer.
In the above example provided by the invention, the second probe can be precisely needled to the interface between the oxide layer of the electrode of the Josephson junction and the electrode, so that the second probe can be well electrically connected with the electrode of the Josephson junction without damaging the electrode, and the performance of the Josephson junction is prevented from being influenced.
In the above example provided by the invention, in the superconducting quantum bit junction resistance measurement process, the change condition of the resistance between the probes is monitored in real time, so that the probes can be precisely needled to the interface between the oxide layer of the Josephson junction electrode and the electrode, the probes can be well electrically connected with the electrode of the Josephson junction without damaging the electrode, and the measurement of the Josephson junction resistance is carried out on the basis, so that the measurement accuracy can be effectively improved.
In the above example provided by the present invention, the number of probes used in the superconducting qubit junction resistance measurement process can be reduced.
In the example provided by the invention, the nondestructive testing probe device for the quantum chip can effectively improve the adjusting speed and the adjusting accuracy of an operator when the probe is adjusted in the Z-axis direction or other directions, so that the problem that the superconducting quantum chip cannot be detected or scrapped due to too deep or too shallow probe downward penetration can be avoided.
In the example provided by the invention, the quantum chip nondestructive testing probe station can ensure that the probe can be accurately positioned in the testing process by matching a plurality of probe devices, the supporting structure and the chip displacement station, so that the testing of the superconducting quantum bit junction resistor has higher testing precision.
Drawings
FIG. 1 is a schematic diagram of a qubit structure of a superconducting quantum chip;
FIG. 2 is a schematic diagram of another qubit structure of a superconducting quantum chip;
fig. 3 is a schematic structural diagram of a josephson junction;
FIG. 4 is a schematic diagram of a probe apparatus according to an embodiment of the present invention;
FIG. 5 is a schematic view of a needle insertion position provided in one embodiment of the present invention;
FIG. 6 is a schematic diagram II of a probe apparatus according to an embodiment of the present invention;
FIG. 7 is a schematic diagram III of a probe apparatus according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of a superconducting qubit junction resistance measurement system according to one embodiment of the present invention;
FIG. 9 is a flow chart of a method for measuring resistance of a superconducting qubit junction according to an embodiment of the present invention;
FIG. 10 is a second flow chart of a method for measuring resistance of a superconducting qubit junction according to an embodiment of the present invention;
FIG. 11 is a schematic diagram of an implementation of a superconducting qubit junction resistance measurement method provided in one embodiment of the present invention;
FIG. 12 is a schematic diagram of a superconducting qubit junction resistance measurement system according to one embodiment of the present invention;
FIG. 13 is a flow chart of a method for connecting electrical contacts according to one embodiment of the present invention;
FIG. 14 is a schematic view of an electrical contact-connection system according to an embodiment of the present invention;
FIG. 15 is a schematic diagram of a probe apparatus according to an embodiment of the present invention;
fig. 16 is a schematic diagram of two probes needle insertion on both sides of a josephson junction provided in one embodiment of the invention;
FIG. 17 is a schematic diagram III of a superconducting qubit junction resistance measurement system according to one embodiment of the present invention;
FIG. 18 is a schematic diagram of a superconducting qubit junction resistance measurement circuit provided in one embodiment of the present invention;
FIG. 19 is a flow chart of a method for measuring resistance of a superconducting qubit junction according to an embodiment of the present invention;
FIG. 20 is a flow chart of a method for measuring resistance of a superconducting qubit junction according to an embodiment of the present invention;
FIG. 21 is a schematic diagram of a superconducting qubit junction resistance measurement system according to one embodiment of the present invention;
FIG. 22 is a second flow chart of the electrical contact connection method according to one embodiment of the present invention;
FIG. 23 is a schematic view of a second needle insertion position provided in one embodiment of the present invention;
FIG. 24 is a schematic diagram III of an electrical contact-making system provided in one embodiment of the present invention;
FIG. 25 is a schematic diagram showing a probe apparatus according to an embodiment of the present invention;
FIG. 26 is a schematic diagram of a superconducting qubit junction resistance measurement system provided in one embodiment of the present invention;
FIG. 27 is a flow chart of a method for measuring resistance of a superconducting qubit junction according to an embodiment of the present invention;
FIG. 28 is a third schematic view of a needle insertion position provided in one embodiment of the present invention;
FIG. 29 is a schematic view of a needle insertion position fourth provided in one embodiment of the present invention;
FIG. 30 is a schematic diagram of the overall structure of a quantum chip nondestructive testing probe apparatus provided in one embodiment of the present invention;
FIG. 31 is a schematic diagram of a Z-axis displacement rough adjustment stage of a quantum chip nondestructive testing probe device according to an embodiment of the present invention;
FIG. 32 is a schematic diagram of a Z-axis displacement fine tuning stage of a quantum chip nondestructive testing probe device according to an embodiment of the present invention;
FIG. 33 is a front view of a quantum chip non-destructive inspection probe device provided in one embodiment of the present invention;
fig. 34 is an enlarged view at a in fig. 33;
FIG. 35 is a schematic diagram of the overall structure of a quantum chip nondestructive testing probe stage according to one embodiment of the present invention;
FIG. 36 is a front view of a quantum chip nondestructive testing probe station provided in one embodiment of the invention;
FIG. 37 is a schematic diagram of a frame structure of a quantum chip nondestructive testing probe stage according to an embodiment of the present invention;
fig. 38 is a schematic view of a partial structure of a probe in a quantum chip nondestructive testing probe stage according to an embodiment of the present invention.
Detailed Description
Specific embodiments of the present invention will be described in more detail below with reference to the drawings. Advantages and features of the invention will become more apparent from the following description and claims. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention.
In the description of the present invention, it should be understood that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", etc., are based on the directions or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
Depending on the different physical systems employed to construct the qubit, the qubit comprises superconducting quantum circuits, semiconductor quantum dots, ion traps, diamond vacancies, topological quanta, photons, etc. in physical implementation.
Superconducting quantum computing is the best solid quantum computing implementation method with the fastest development at present. For superconducting quantum chips, the structure of the qubit can adopt a single capacitor to ground, namely a superconducting quantum interference device with one end grounded and the other end connected with the capacitor, and the capacitor is usually a cross-shaped parallel plate capacitor, as shown in fig. 1, and the capacitor plate C q Surrounded by ground plane (GND), and capacitive plate C q A gap is arranged between the superconducting quantum interference device Squid and the ground plane (GND), one end of the superconducting quantum interference device Squid is connected to the capacitor plate C q The other end is connected to the ground plane (GND). Besides, the structure of the qubit can also adopt two capacitors to the ground and superconducting quantum interference devices respectively connected with the two capacitors to the ground, as shown in fig. 2, the first capacitor plate C q1 Second capacitor plate C q2 And the superconducting quantum interference device Squid is surrounded by the ground plane (GND), and the first capacitor plate C q1 Second capacitor plate C q2 A gap is arranged between the superconducting quantum interference device and the ground plane (GND), one end of the superconducting quantum interference device Squid is connected to the first capacitance polar plate C q1 The other end is connected to the second capacitance polar plate C q2 。
The key structure on the superconducting quantum chip is a superconducting quantum bit, the key structure of the superconducting quantum bit is a Josephson junction, and the performance quality of the Josephson junction directly influences the performance of the quantum bit. Josephson junction is a special device formed by isolating two electrodes with a thin layer of insulator, as in fig. 3, josephson junction 41 comprises a first electrode 4011 and a second electrode 4012, and an insulator between first electrode 4011 and second electrode 4012, wherein the first electrode 4011 may extend from the josephson junction 41 to one side and the second electrode 4012 may extend from the josephson junction 41 to the opposite side. In order to ensure the performance of the superconducting quantum chip, the frequency parameter of the superconducting quantum bit must be strictly controlled, the normal temperature resistance characterization of the superconducting quantum bit is important information of the reaction frequency parameter, and the resistance of the Josephson junction is the key of the normal temperature resistance characterization of the superconducting quantum bit, so that the resistance of the Josephson junction needs to be accurately measured to confirm whether the superconducting quantum chip is qualified or not, and no specific resistance measurement scheme for the superconducting quantum chip exists at present. Junction resistance measurements of the josephson junctions performed in the present invention, the main down needle position is the portion of the electrode extending from the josephson junction.
Example 1
Referring to fig. 4, a first embodiment of the present invention provides a probe apparatus for measuring a superconducting quantum chip, which includes a first probe 11, a second probe 12, a probe manipulation mechanism 2, and a power module 31. The broken line in fig. 4 represents the control connection, and the solid line in the figure represents the signal connection.
In this embodiment, the probe handling mechanism 2 is used to handle the first probe 11 and the second probe 12 down to the side of the josephson junction on the superconducting quantum chip 4, so that the first probe 11 and the second probe 12 penetrate but do not penetrate the oxide layer on the electrode surface on the side of the josephson junction.
The electrode of the Josephson junction in the superconducting quantum chip is usually made of materials such as aluminum, the activity of the aluminum is strong, a non-conductive oxide layer can be formed on the surface quickly after the electrode contacts air, and the existence of the oxide layer is inconvenient to the Josephson junction resistance test work for researching the performance of the finished Josephson junction despite protecting the Josephson junction.
In the present embodiment, the needle-down force of the first probe 11 and the second probe 12 is related to the penetration depth of the first probe 11 and the second probe 12, and the greater the needle-down force, the deeper the first probe 11 and the second probe 12 are penetrated. The needle-down force should be set so that the first and second probes 11, 12 do not contact the electrode or just contact the electrode, as shown in fig. 5, the first and second probes 11, 12 penetrate the oxide layer 402 on the surface of the electrode 401 of the josephson junction, but do not penetrate the oxide layer 402. In other embodiments than this embodiment, the needle-down force may be controlled as needed to control the penetration depth of the first probe 11 and the second probe 12, for example, to pierce the oxide layer but stop at the electrode interface.
In this embodiment the power supply module 31 is arranged to apply an electrical breakdown signal between the first probe 11 and the second probe 12 to break down the oxide layer under the two penetration sites on one side of the josephson junction so that the first probe 11 and the second probe 12 form an electrically conductive connection with the electrode on one side of the josephson junction. The power module 31 is connected to the first probe 11 and the second probe 12 respectively, and uses them as two output terminals respectively, so as to output an electric breakdown signal to act on the oxide layer between the first probe 11 and the second probe 12, and further break down the oxide layer under two penetration positions on one side of the josephson junction. After breakdown of the oxide layer, the insulating properties are lost, so that the first probe 11 and the second probe 12 form an electrically conductive connection with the electrode on one side of the josephson junction. As shown in fig. 5, the oxide layer 402 between the first probe 11 and the second probe 12, that is, the oxide layer 402 within the dashed line box in the figure is broken down.
In the probe device of this embodiment, by manipulating the first probe 11 and the second probe 12 to penetrate but not penetrate the oxide layer on the electrode surface of the josephson junction, an electrical breakdown signal is applied between the first probe 11 and the second probe 12 on the same side of the josephson junction, and the oxide layer between the first probe 11 and the second probe 12 breaks down, so that the broken oxide layer loses insulation performance, and thus the first probe 11 and the second probe 12 form conductive connection with the electrode of the josephson junction.
It should be noted that, since the structure of the josephson junction is an insulating layer between two electrodes, there are electrodes on both sides of the josephson junction, and the first probe 11 and the second probe 12 form an electrically conductive connection with only the electrode on one side of the josephson junction, the electrodes on the other side of the josephson junction can be electrically connected in the same manner.
In this embodiment, after the oxide layer on the surface of the electrode is broken down by the electrical breakdown signal, the dielectric with insulating properties such as the oxide near the tip of the electrode is used as a conductive medium, and the first probe 11 and the second probe 12 form good electrical contact with the surface of the electrode, so that the measurement of the superconducting quantum chip is convenient, for example, the measurement of the resistance or other electrical properties of the superconducting quantum chip can be performed, which is not described in detail in this embodiment.
Example two
The second embodiment of the present invention provides another probe apparatus including all the technical features of the first embodiment, that is, the specific structure of the probe manipulation mechanism is added to the first embodiment and the number of probe groups and the like are described. The whole structure of the probe apparatus is as described in the first embodiment, and for brevity, reference will be made to the first embodiment for details.
Referring to fig. 6, in the present embodiment, 2 probe sets are taken as an example, and include a first probe 11, a second probe 12, a third probe 13 and a fourth probe 14, where the first probe 11 and the second probe 12 are a set, and the third probe 13 and the fourth probe 14 are a set.
The probe handling mechanism 2 is further used for handling the third probe 13 and the fourth probe 14 down to the other side of the josephson junction, so that the third probe 13 and the fourth probe 14 penetrate but do not penetrate through the oxide layer on the electrode surface on the other side of the josephson junction.
The power supply module 31 is also used to apply an electrical breakdown signal between the third probe 13 and the fourth probe 14 to break down the oxide layer under the two penetration sites on the other side of the josephson junction so that the third probe 13 and the fourth probe 14 form an electrically conductive connection with the electrode on the other side of the josephson junction.
Because the structure of the josephson junction is an insulating layer between two electrodes, there are electrodes on both sides of the josephson junction, and the first probe 11 and the second probe 12 form conductive connection with the electrode on one side of the josephson junction only. The third probe 13 and the fourth probe 14 of the probe arrangement of the present embodiment are thus in electrically conductive connection with the electrode on the other side of the josephson junction in the same way as in the first embodiment.
In the present embodiment, the first probe 11, the second probe 12, the third probe 13, and the fourth probe 14 have the same needle setting force. The specific needle setting force, needle tip diameter, etc. are as described in example one, and are not described in detail herein. In addition, the needle setting force of each probe can be different, and proper needle setting force can be selected according to the actual needle setting position, the probe material and the like.
In order to obtain the needle setting forces of the first, second, third and fourth probes 11, 12, 13 and 14 in real time, in this embodiment, the probe manipulation mechanism 2 includes a micro sensor (not shown) for detecting the needle setting forces of the first, second, third and fourth probes 11, 12, 13 and 14. According to the needle setting force detected by the micro force sensor, the needle control mechanism 2 can accurately control the needle setting force of the first needle 11, the second needle 12, the third needle 13 and the fourth needle 14. Further, the number of the micro force sensors is four, and the micro force sensors are respectively connected with the first probe 11, the second probe 12, the third probe 13 and the fourth probe 14.
The electrical breakdown signal is set to ensure that the oxide layer can be broken down without affecting the electrode, for example, in an application scenario, the voltage of the electrical breakdown signal is 0.5V to 5V, preferably 1V, 2V, 3V or 4V; the current is not higher than 10. Mu.A, for example, 1. Mu.A, 3. Mu.A, 5. Mu.A, 7. Mu.A, 9. Mu.A, etc.
In addition, since the number of the displacement adjustment assemblies is the same as that of the probe groups, in the present embodiment, the probe manipulation mechanism includes at least 2 groups of displacement adjustment assemblies; and the displacement adjusting assemblies are respectively connected with the first probe and the second probe and are respectively used for controlling the first probe and the second probe to displace in the multiple degrees of freedom direction and lower the needle to one side of the Josephson junction. And the other group of displacement adjusting assemblies are respectively connected with a third probe and a fourth probe and are respectively used for controlling the third probe and the fourth probe to displace in the direction of multiple degrees of freedom and lower the needle to the other side of the Josephson junction.
In some specific application scenarios, each group of displacement adjustment assemblies comprises a first displacement table with first displacement precision, one end of the first displacement table is fixed, and the other end of the first displacement table is respectively connected with a first probe, a second probe, a third probe and a fourth probe. The displacement adjusting assembly further comprises a second displacement table with second displacement precision, one end of the first displacement table is fixed at one end of the second displacement table, and the other end of the second displacement table is fixed. The first displacement accuracy is higher than the second displacement accuracy. The displacement directions of the first displacement table and the second displacement table are all space three-dimensional freedom degree directions.
In some specific application scenarios, the displacement adjustment assembly further comprises a connecting arm, and the connecting arm is connected with the other end of the first displacement table and the micro force sensor, so that the first displacement table drives the first probe and the second probe to move.
In other embodiments than the present embodiment, the number of the probe manipulation mechanisms, the micro sensors, and the like, for example, the number of the displacement adjustment assemblies, the number of the probe arms, and the like, may be set by those skilled in the art according to the specific number of the probe groups.
Example III
Referring to fig. 7, a third embodiment of the present invention provides a probe apparatus based on the same inventive concept as the probe apparatus of the second embodiment. In fig. 7, the power module 31 is omitted.
The probe manipulation mechanism 2 comprises four displacement adjustment assemblies 21, and the four displacement adjustment assemblies 21 are respectively connected with the first probe 11, the second probe 12, the third probe 13 and the fourth probe 14 and are respectively used for manipulating the first probe 11, the second probe 12, the third probe 13 and the fourth probe 14 to displace in the multiple degree of freedom direction and respectively drop to two opposite sides of the Josephson junction. By means of the four displacement adjustment assemblies 21, each of the first probe 11, the second probe 12, the third probe 13 and the fourth probe 14 can be individually manipulated without affecting each other. The positions of the first probe 11, the second probe 12, the third probe 13 and the fourth probe 14 relative to the superconducting quantum chip 4 are not fixed, so that the first probe 11, the second probe 12, the third probe 13 and the fourth probe 14 need to be controlled to be displaced to the position of the josephson junction in the multiple degree of freedom, and then the first probe 11, the second probe 12, the third probe 13 and the fourth probe 14 need to be controlled to be needled down to the electrode of the josephson junction.
In the present embodiment, as shown in fig. 7, the multiple degrees of freedom refer to at least two degrees of freedom in the X-axis, Y-axis, Z-axis, and other directions in the drawing.
In order to make full use of space, in the present embodiment, two displacement adjustment assemblies 21 for connecting the first probe 11 and the second probe 12 are arranged on one side of the superconducting quantum chip 4, and two displacement adjustment assemblies 21 for connecting the third probe 13 and the fourth probe 14 are arranged on the other side of the superconducting quantum chip 4. That is, four displacement adjustment members 21 are distributed two by two on both sides of the superconducting quantum chip 4.
Specifically, the displacement adjustment assembly 21 includes a first displacement stage 211 and a second displacement stage 212.
The first displacement stage 211 is connected to the second displacement stage 212, and the second displacement stage 212 has the second displacement accuracy, so that the first displacement stage 211 can be displaced with the second displacement accuracy in the direction of the spatial three-dimensional degrees of freedom.
The first displacement stages 211 of the four displacement adjustment assemblies 21 are respectively connected to the first probe 11, the second probe 12, the third probe 13 and the fourth probe 14, and since the first displacement stages 211 have the first displacement accuracy, the first probe 11, the second probe 12, the third probe 13 and the fourth probe 14 can be displaced in the direction of the spatial three-dimensional degrees of freedom with the first displacement accuracy higher than the second displacement accuracy. The spatial three-dimensional freedom direction refers to the X, Y, Z axis direction in the figure, wherein the X, Y, Z axes are perpendicular to each other.
Wherein the second displacement accuracy is lower, and coarse displacement adjustment can be realized, so that the first probe 11, the second probe 12, the third probe 13 and the fourth probe 14 are displaced to the positions of the Josephson junctions more quickly. The first displacement accuracy is high, and fine displacement adjustment can be realized, so that the first probe 11 and the second probe 12 are accurately displaced to one side of the Josephson junction, and the third probe 13 and the fourth probe 14 are accurately displaced to the other side of the Josephson junction.
Further, the displacement adjustment assembly 21 further includes a probe arm 25, and the first displacement stages 211 of the four displacement adjustment assemblies 21 are respectively connected to the first probe 11, the second probe 12, the third probe 13, and the fourth probe 14 through the probe arm 25. The probe arm 25 can move the first displacement stage 211 and the second displacement stage 212 away from the superconducting quantum chip 4 as far as possible, thereby leaving enough operating space for the superconducting quantum chip 4.
To facilitate the installation of the displacement adjustment assembly 21, the probe manipulation mechanism is fixed to a support structure. The support structure includes two support plates 62, the two support plates 62 are respectively disposed at two sides of the superconducting quantum chip 4, and the second displacement stage 212 of the two displacement adjustment assemblies 21 is respectively fixed on each support plate 62. That is, the second displacement stage 212 of the two displacement adjustment assemblies 21 for connecting the first probe 11 and the second probe 12 is fixed to one support plate 62, and the first displacement stage 211 of the two displacement adjustment assemblies 21 for connecting the third probe 13 and the fourth probe 14 is fixed to the other support plate 62. The second displacement stage 212 may be magnetically secured to the support plate 62.
To secure the support plate 62, the support structure further includes a support platform 61 and a support column 24, the support column 24 being vertically connected to the support platform 61, the support plate 62 being secured to an end of the support column 24 remote from the support platform 61. The support column 24 can be more than one, and support column 24 and backup pad 62 can be through screw fixation, and support column 24 and supporting platform 61 can be through threaded connection, if adopt threaded connection to fix, need set up the screw hole on the supporting platform 25, then support column 24 needs to have the double-screw bolt with the screw hole adaptation.
In order to facilitate taking, placing and measuring the superconducting quantum chip 4, the supporting structure 2 further comprises a chip displacement platform 7 for carrying the superconducting quantum chip 4, wherein the chip displacement platform 7 is fixed on the supporting platform 61 and is positioned between two supporting plates 62 for driving the superconducting quantum chip 4 to displace in the direction of three-dimensional freedom of space and rotate in a plane parallel to the supporting platform 61. The superconducting quantum chip 4 can be adjusted to a position suitable for measurement by driving the superconducting quantum chip 4 to displace and/or rotate through the chip displacement table 7. The chip displacement table 7 may be fixed to the support platform 61 by magnetic attraction.
Example IV
Referring to fig. 8, a fourth embodiment of the present invention provides a superconducting qubit junction resistance measurement system comprising a junction resistance measurement module 32 and the probe apparatus of the second or third embodiment.
The junction resistance measurement module 32 is used to measure resistance between one of the first probe 11 and the second probe 12 and one of the third probe 13 and the fourth probe 14. Junction resistance measurement module 32 is in communication with the josephson junction via one of first probe 11 and second probe 12 and one of third probe 13 and fourth probe 14, so that the resistance of the josephson junction can be measured. For example, junction resistance measurement module 32 has a positive electrode connected to second probe 12 and a negative electrode connected to third probe 13, and performs a josephson junction resistance measurement.
The superconducting qubit junction resistance measurement system of the embodiment adopts the probe device of the second embodiment or the third embodiment, so that probes are respectively arranged on two side electrodes of the Josephson junction to form conductive connection with the probe device, resistance measurement can be realized by respectively connecting the probes on two sides of the Josephson junction by using the junction resistance measurement module, and the probe is not in direct contact with the electrode of the Josephson junction, so that physical damage to the electrode of the Josephson junction is avoided, and the resistance of the Josephson junction can be accurately measured while the loss of superconducting qubit performance is avoided; meanwhile, as the probe is pricked into the oxide layer on the electrode surface of the Josephson junction, the stability is ensured, and the reliability and the accuracy of the resistance measurement result of the Josephson junction are further ensured.
Example five
The present embodiment provides a method for measuring resistance of a superconducting qubit junction, where the qubit includes a josephson junction, the josephson junction includes a first electrode and a second electrode, and fig. 9 is a flowchart of steps of the method for measuring resistance of a superconducting qubit junction, where the method includes:
s501, electrically breaking down a first oxide layer formed on the surface of the first electrode;
s502, electrically breaking down a second oxide layer formed on the surface of the second electrode;
s503 applying a test current through the first electrically broken down oxide layer, the josephson junction and the second electrically broken down oxide layer and measuring a voltage between the first broken down oxide layer and the second broken down oxide layer; and
s504, determining the superconducting quantum bit junction resistance according to the voltage and the test current.
This embodiment is achieved by first electrically breaking down a first oxide layer formed on the surface of the first electrode and electrically breaking down a second oxide layer formed on the surface of the second electrode, then applying a test current through the broken down first oxide layer, the josephson junction and the broken down second oxide layer and measuring the voltage between the first oxide layer and the second oxide layer, and determining the superconducting qubit junction resistance based on the voltage and the test current. Compared with the prior art, the method can avoid the influence of the oxide layer on the resistance measurement, and thus the resistance of the Josephson junction can be obtained more accurately.
The implementation details of the superconducting qubit junction resistance measurement method provided in this embodiment are further described below with reference to the accompanying drawings.
In some implementations of this embodiment, the step of electrically breaking down the first oxide layer formed on the surface of the first electrode includes: firstly, contacting a first probe and a second probe with the first oxide layer; a potential difference is then developed between the first probe and the second probe, such as by applying a breakdown voltage, to cause the first oxide layer to achieve an electrical breakdown.
In some other implementations, forming a potential difference between the first probe and the second probe to cause the first oxide layer to achieve electrical breakdown, further includes: a first guard voltage is applied to the second electrode to reduce the potential difference between the two superconducting layers of the josephson junction, and the second electrode may be contacted with other probes to provide the first guard voltage to the second electrode, for better protection, the potential difference between the first guard voltage and the breakdown voltage applied to the first oxide layer being less than the voltage at which the barrier layer of the josephson junction breaks down. The barrier layer of a josephson junction typically has a breakdown voltage of less than 3V-5V at 1-2nm, according to applicant's manufacturing process and design parameters. Therefore, the first protection voltage may be less than the breakdown voltage, for example, less than 3V.
For example, when the first probe is connected to +3v and the second probe is Grounded (GND), the second electrode may be connected to a protection voltage of +1.5v, so that an excessive potential difference between the first electrode and the second electrode is avoided, thereby ensuring that the josephson junction is not broken down when the first oxide layer is electrically broken down.
In some implementations of this embodiment, the step of electrically breaking down the second oxide layer formed on the surface of the second electrode includes: firstly, contacting a third probe and a fourth probe with the second oxide layer; a potential difference is then formed between the third probe and the fourth probe, for example, a breakdown voltage is applied, so that the second oxide layer achieves an electrical breakdown.
In some other implementations, forming a potential difference between the third probe and the fourth probe to cause the second oxide layer to achieve electrical breakdown, further includes: a second guard voltage is applied across the first electrode to reduce the potential difference between the two superconducting layers of the josephson junction.
For example, since the positions of the first and second probes remain unchanged after the first oxide layer is electrically broken down by the first and second probes, the first probe or the second probe may be directly used to apply a protection voltage to avoid the josephson junction from being electrically broken down due to an excessive potential difference between the first and second electrodes, for example, when the third probe is connected to +3v and the fourth probe is Grounded (GND), the first electrode may be connected to a protection voltage of +1.5v. In addition, when the breakdown voltage is applied to the second oxide layer to perform electric breakdown, the first probe and the second probe are still in contact with the first electrode and the first oxide layer, and in this case, when the second oxide layer is electrically broken down by the third probe and the fourth probe, a part of the breakdown voltage may flow to the first probe and/or the second probe through the josephson junction, so that applying the protection voltage to the first electrode in this step becomes a viable option. Also, the potential difference between the breakdown voltage and the protection voltage is smaller than 3V, for example, to ensure the safety of the josephson junction.
The first oxide layer, the first electrode, the josephson junction, the second electrode, and the second oxide layer form a series circuit model, and if a test current is directly applied by using the contact of the probe with the surface of the first electrode and the surface of the second electrode without electric breakdown and the corresponding voltage is measured, the junction resistance obtained is easily affected by the resistances of the first oxide layer and the second oxide layer. The present embodiment can then determine the superconducting qubit junction resistance from the voltage and the constant current by bringing a first probe and a second probe into contact with a first oxide layer of the first electrode and electrically breaking down the first oxide layer located in the first probe contact region and the second probe contact region, and bringing a third probe and a fourth probe into contact with a second oxide layer of the second electrode and electrically breaking down the second oxide layer located in the third probe contact region and the fourth probe contact region, and then applying a constant current through the josephson junction with one of the first probe and the second probe and one of the third probe and the fourth probe and measuring the corresponding voltage.
Example six
Referring to fig. 10, a sixth embodiment of the present invention provides a superconducting qubit junction resistance measurement method, which may or may not be further optimized based on the fifth embodiment, and the method includes:
s601: setting a first probe, a second probe, a third probe and a fourth probe;
s602: controlling the first probe and the second probe to be downwards needle to one side of a Josephson junction on a superconducting quantum chip, and controlling the third probe and the fourth probe to be downwards needle to the other side of the Josephson junction, so that the first probe and the second probe, the third probe and the fourth probe respectively penetrate but do not penetrate through oxide layers on electrode surfaces on two sides of the Josephson junction;
s603: applying an electrical breakdown signal between the first and second probes and between the third and fourth probes to break down the oxide layer under the two penetration sites on each side of the josephson junction such that the first and second probes, the third and fourth probes form an electrically conductive connection with the electrodes on both sides of the josephson junction respectively;
s604: resistance is measured between one of the first and second probes and one of the third and fourth probes.
The electrode of the josephson junction is usually made of aluminum and the like, the aluminum has strong activity, and a non-conductive oxide layer can be formed on the surface quickly after the electrode contacts air. The needle setting forces of the first probe, the second probe, the third probe and the fourth probe are related to the penetration depths of the first probe, the second probe, the third probe and the fourth probe, and the greater the needle setting forces, the deeper the first probe, the second probe, the third probe and the fourth probe are penetrated. The needle-setting force should be set so that the first, second, third and fourth probes are not in contact with the electrode or are in contact with the electrode exactly. In this embodiment, the first, second, third and fourth probes have the same needle setting force.
The electrical breakdown signal acts on the oxide layer between the first and second probes and between the third and fourth probes, thereby breaking down the oxide layer under the two penetration sites on each side of the josephson junction. After breakdown of the oxide layer, the insulating properties are lost, so that the first and second probes form a conductive connection with the electrode on one side of the josephson junction, and the third and fourth probes form a conductive connection with the electrode on the other side of the josephson junction.
According to the superconducting qubit junction resistance measurement method, the probes are controlled to be pricked into the oxide layers on the surfaces of the two side electrodes of the Josephson junction but not pricked through the oxide layers, and the oxide layers between the two probes on each side of the Josephson junction are broken through in an electric breakdown mode, so that the two side electrodes of the Josephson junction are electrically connected with the probes, and resistance measurement can be achieved by respectively connecting the probes on the two sides of the Josephson junction. Because the probe is not in direct contact with the electrode of the Josephson junction, physical damage to the electrode of the Josephson junction is avoided, and the performance loss of superconducting qubits can be avoided while the resistance of the Josephson junction is accurately measured; meanwhile, as the probe is pricked into the oxide layer on the electrode surface of the Josephson junction, the stability is ensured, and the reliability and the accuracy of the resistance measurement result of the Josephson junction are further ensured.
Example seven
Referring to fig. 11 and 12, a seventh embodiment of the present invention provides a superconducting qubit junction resistance measurement method, which may or may not be further optimized based on the fifth embodiment, and the method includes:
s701, one of the first probe 11 and the second probe 12 is contacted with the first oxide layer 4021 on the surface of the first electrode 4011, and the other is penetrated into the first oxide layer 4021;
s702 electrically breakdown the first oxide layer 4021 by the first probe 11 and the second probe 12;
s703, bringing one of the third probe 13 and the fourth probe 14 into contact with the second oxide layer 4022 on the surface of the second electrode 4012, and inserting the other into the second oxide layer 4022;
s704, electrically breaking down the second oxide layer 4022 by the third probe 13 and the fourth probe 14;
s705, measuring the resistance between one of the first probe 11 and the second probe 12 and one of the third probe 13 and the fourth probe 13.
In some implementations of the present embodiment, the step of electrically breaking down the first oxide layer 4021 by the first probe 11 and the second probe 12 may be to form a potential difference between the first probe 11 and the second probe 12, such as applying a breakdown voltage, so that the first oxide layer 4021 achieves electrical breakdown.
Illustratively, the penetration depth of one of the first probe 11 or the second probe 12 is the thickness of the first oxide layer 4021; the penetration depth of one of the third probe 13 or the fourth probe 14 is the thickness of the second oxide layer 4022.
Illustratively, the first probe 11 and the second probe 12 may employ tungsten needles, and the degree of hardness of the first probe 11 and the second probe 12 may be adjusted by controlling the diameters of the tungsten needles.
Illustratively, when the first electrode 4011 is aluminum (Al) and the first oxide layer 4021 is alumina, by adjusting the diameter of the tungsten needle such that the hardness of the first probe 11 is less than the hardness of the first oxide layer 4021 and such that the hardness of the second probe 12 is greater than the hardness of the first oxide layer 4021 and less than the hardness of the first electrode 4011, it is ensured that the first probe 11 is only in contact with the surface of the first oxide layer 4021 without penetrating the first oxide layer 4021 and the second probe 12 is capable of penetrating the first oxide layer 4021 without penetrating the first electrode 4011, in such a manner that breakdown of the first oxide layer 4021 can be achieved with a lower voltage. Different needle insertion forces may be used to achieve this. Specifically, in this case, in the circuit model from the tip of the first probe 11 to the tip of the second probe 12, the oxide layer is mainly located under the first probe 11, and thus the required breakdown voltage can be reduced.
In some implementations of the present embodiment, the step of electrically breaking down the second oxide layer 4022 by the third probe 13 and the fourth probe 14 may be to form a potential difference between the third probe 13 and the fourth probe 14, for example, to apply a breakdown voltage so that the second oxide layer 4022 achieves electrical breakdown.
In some implementations, the third and fourth probes 13, 14 may employ tungsten needles, and the degree of hardness of the third and fourth probes 13, 14 may be adjusted by controlling the diameter of the tungsten needles.
Illustratively, when the second electrode 4012 is aluminum (Al) and the second oxide layer 4022 is alumina, by adjusting the diameter of the tungsten needle such that the hardness of the third probe 13 is smaller than the hardness of the second oxide layer 4022 and such that the hardness of the fourth probe 14 is greater than the hardness of the second oxide layer 4022 and less than the hardness of the second electrode 4012, it is ensured that the third probe 13 is only in contact with the surface of the second oxide layer 4022 without penetrating the second oxide layer 4022 and the fourth probe 14 is capable of penetrating the second oxide layer 4022 without penetrating the second electrode 4012, in such a manner that breakdown of the second oxide layer 4022 can be achieved with a lower voltage.
Note that, if the first oxide layer 4021, the first electrode 4011, the josephson junction 41, the second electrode 4012, and the second oxide layer 4022 form a series circuit model, a test current is directly applied to the surface of the first electrode 4011 and the surface of the second electrode 4012 by using a probe without electric breakdown, and a corresponding voltage is measured, the junction resistance may be affected by the resistances of the first oxide layer 4021 and the second oxide layer 4022. This embodiment is exemplified by bringing the first probe 11 and the second probe 12 into contact with the first oxide layer 4021 of the first electrode 4011 and electrically breaking down a part of the first oxide layer 4021 located under the first probe 11 and under the second probe 12 or at the tip of the needle, and by the second probe 12 penetrating to a depth of the thickness of the first oxide layer 4021, a small amount of oxide layer at the tip of the second probe 12 is broken down; and bringing the third probe 13 and the fourth probe 14 into contact with the second oxide layer 4022 of the second electrode 4012 and electrically breaking down a portion of the second oxide layer 4022 located under the third probe 13 and under the fourth probe 14 or at the tip, the fourth probe 14 having a depth of the thickness of the second oxide layer 4022, a small amount of oxide layer being broken down at the tip of the fourth probe 14, as an example; illustratively, a constant current through the josephson junction 41 may be applied with the second probe 12 and the fourth probe 14 and the corresponding voltages measured, i.e. the superconducting qubit junction resistance may be determined from the voltages and the constant current. In this embodiment, the probe just reaches the surfaces of the first electrode and the second electrode, and the oxide layer is electrically broken down to further reduce interference, so that the junction resistance detection result can be more accurate.
According to the superconducting qubit junction resistance measurement method provided by the embodiment, the oxide layer on the first electrode 4011, which is in contact with the first probe 11 and the second probe 12, can be subjected to electric breakdown, the oxide layer on the second electrode 4012, which is in contact with the third probe 13 and the fourth probe 14, can be subjected to electric breakdown, and then junction resistance measurement is performed.
Example eight
In this embodiment, in order to save the number of probes, one of the probes may be used as a common probe, and the purpose of saving the probes may be achieved by moving the common probe. This embodiment may be a further optimization improvement on the basis of the fifth to seventh embodiments.
Illustratively, in the step of electrically breakdown the second oxide layer 4022, the first probe 11 and the third probe 13 may be brought into contact with the second oxide layer 4022 by moving the first probe 11; a potential difference is then formed between the first probe 11 and the third probe 13 to cause the second oxide layer 4022 to achieve an electrical breakdown.
In this embodiment, the number of probes used can be reduced, and junction resistance measurement can be achieved by only the first probe 11, the second probe 12, and the third probe 13.
Preferably, when one probe is on the surface of the first oxide layer and the other probe is only inserted or just inserted through the oxide layer, the probes on the surface of the first oxide layer are used as the common probes.
The first electrode and the second electrode may be one of the following elements formed on a substrate of a superconducting quantum chip, for example: capacitor plate, ground plate.
Illustratively, the first oxide layer and the second oxide layer 4022 are native oxide layers, for example, when the first electrode 4011 and the second electrode 4012 are aluminum (Al), the oxide layers are oxides of aluminum (Al).
Example nine
In this embodiment, a superconducting qubit junction resistance measurement system is provided. Fig. 12 is a schematic structural diagram of a superconducting qubit junction resistance measurement system according to the present embodiment.
The implementation details of the superconducting qubit junction resistance measurement system provided in this embodiment are described below with reference to the accompanying drawings. Therein, referring to fig. 11, the qubit comprises a josephson junction 41, and a first electrode 4011 and a second electrode 4012 connected to the josephson junction 41, respectively.
As shown in fig. 12, the superconducting qubit junction resistance measurement system includes:
A first probe unit for contacting a first oxide layer 4021 formed on a surface of the first electrode 4011;
a second probe unit for contacting a second oxide layer 4022 formed on the surface of the second electrode 4012; and
a test meter unit 34, the test meter unit 34 being connected to the first and second probe units for applying a voltage to achieve an electrical breakdown, and applying a test current through the broken first oxide layer 4021, the josephson junction 41 and the broken second oxide layer 4022 and measuring the voltage between the broken first oxide layer 4021 and the broken second oxide layer 4022.
In one implementation, the test meter unit 34 may include a constant current source assembly that provides the test current and a meter assembly that takes current and voltage measurements.
In this embodiment, the first probe unit includes a first probe 11 and a second probe 12, and the first probe 11 or the second probe 12 is inserted into the first oxide layer 4021.
Further, the penetration depth is the thickness of the first oxide layer 4021.
In this embodiment, the second probe unit includes a third probe 13 and a fourth probe 14, and the third probe 13 or the fourth probe 14 is inserted into the second oxide layer 4022.
Further, the penetration depth is the thickness of the second oxide layer 4022.
In this embodiment, the first oxide layer 4021 is a native oxide layer formed on the surface of the first electrode 4011, and the second oxide layer 4022 is a native oxide layer formed on the surface of the second electrode 4012. In one implementation, the first probe 11 has a hardness less than the oxide layer, the second probe 12 has a hardness greater than the oxide layer and less than the first electrode 4011, the third probe 13 has a hardness less than the oxide layer, and the fourth probe 14 has a hardness greater than the oxide layer and less than the second electrode 4012. Wherein the first probe 11, the second probe 12, the third probe 13 and the fourth probe 14 are tungsten needles.
In this embodiment, the first electrode 4011 and the second electrode 4012 are one of the following elements formed on the substrate 1 of the superconducting quantum chip: capacitor plate, ground plate.
It should be noted here that: the superconducting qubit junction resistance measurement system has similar beneficial effects as those of the junction resistance measurement method embodiment, so that redundant description is omitted. For technical details not disclosed in the embodiment of the junction resistance measurement system of the present invention, those skilled in the art will understand with reference to the above description of the junction resistance measurement method, and the description is omitted herein for brevity.
In the superconducting qubit junction resistance measurement system provided in this embodiment, the oxide layer on the first electrode 4011, which is in contact with the first probe 11 and the second probe 12, may be first electrically broken down, and the oxide layer on the second electrode 4012, which is in contact with the third probe 13 and the fourth probe 14, may be electrically broken down, and then the junction resistance is measured.
Examples ten
In order to test the josephson junction, an electrical connection with the electrode of the josephson junction is required, an oxide layer is formed on the surface of the electrode of the josephson junction, and in order to form a good electrical connection with the electrode of the josephson junction, one possible solution is to contact the electrode by puncturing the oxide layer with a probe. However, it is a very important link how to make good electrical connection of the probe to the electrode of the josephson junction without damaging the josephson junction.
The tenth embodiment of the invention provides an electric contact connection method, by which the probe can be accurately realized to just reach the interface of two film layers, for example, the interface of an electrode and an oxide layer.
Referring to fig. 13, the present embodiment includes the following:
in an embodiment of the present invention, the electrical contact connection method includes:
s1001, moving the probe to the first film layer, and monitoring the pressure born by the probe in real time;
s1002, monitoring the first abrupt change of the pressure, and continuing to move the probe;
s1003, monitoring the second mutation of the pressure, and stopping the movement of the probe when the second mutation occurs, wherein the probe is in contact with the second membrane layer.
In a specific implementation manner, the second film layer is an electrode of a josephson junction, and the first film layer is an oxide layer on the surface of the electrode.
For example, the electrode may be made of aluminum, niobium, or the like, and other superconducting material layers may be used in the present invention.
The thickness of the first film layer may be between 0.1nm and 5nm, for example 0.3nm, 0.5nm, 0.8nm, 1nm, 1.2nm, 1.5nm, 1.7nm, 2nm, 2.3nm, 2.6nm, 2.9nm, 3nm, 3.1nm, 3.4nm, 3.6nm, 3.8nm, 4nm, 4.3nm, 4.5nm, 4.8nm, etc.
In order to reduce the influence of the external environment, the method can be carried out in a dust-free room with a vibration isolation platform and a sound insulation box.
In S1001, the probe is not initially in contact with other external objects, and thus is not subjected to pressure, and the monitoring result should be 0.
As an example, in S1002, the first mutation is a change in pressure from 0 to 0.1 to 10 μn, denoted as a μn. When the first mutation occurs, it means that the probe and the first membrane layer are changed from a non-contact state to a contact state.
The constraints of the first abrupt pressure change include probe shape, material, film thickness, etc., and in general, the softer the probe material, the duller the tip, the thicker the film and the greater the pressure. It is clearly understood that the hardness of the probe is at least greater than the hardness of the first film layer.
Upon the first mutation, the probe will continue to move, i.e. continue deeper into the first membrane layer, during which time the detected pressure will typically continue to increase.
As the probe goes deeper, it is believed that the probe passes just through the first membrane layer and contacts the second membrane layer when a second mutation in the pressure occurs.
As an example, in S1003, the second mutation is a first mutation in which the pressure becomes 10-100 times.
The multiple of the second abrupt pressure change may be different according to the actual material and the thickness of the oxide layer. For example, for aluminum films, one possible multiple is 10-12; but for niobium one possible multiple is 50-60.
For example, for an aluminum film, the first abrupt change is a change in pressure from 0 to 5 μN, and as the probe is continuously moved, for example, the pressure becomes 6 μN, the probe is considered to remain in the first film, and when the pressure becomes 50 μN (for example, an abrupt change occurs from 6.2 μN), the changed pressure is 10 times that of the first abrupt change, and the probe is considered to just pass through the first film and come into contact with the second film.
In the embodiment of the present invention, the multiple of the second pressure mutation may be obtained after multiple experiments and characterization, where the multiple is suitable for related hardware and the part to be tested.
In S1003, upon detecting a second abrupt change in the pressure, the probe is stopped to avoid continued penetration into the second membrane layer.
Experiments prove that the method of the embodiment of the invention can realize the electric connection of the probe and the electrode, and the probe only pierces through the oxide layer and does not damage the electrode, or the probe only leaves tiny pits on the surface of the electrode, so that the damage is tiny (generally acceptable at the moment) and the performance of the Josephson junction is hardly affected.
In addition, in the embodiment of the invention, the probe moves at a constant speed at a slow speed. On the one hand, the probe speed is not easily high due to the thin oxide layer, and on the other hand, the movement is stopped immediately when the target position is reached.
For example, the probe movement speed is 10nm/s to 1 μm/s.
The electrical contact connection method provided by the embodiment can enable the probe to just pierce through the oxide layer to be in contact with the electrode as much as possible, and reduce the damage to the electrode of the Josephson junction electrode as much as possible.
Example eleven
In order to test the josephson junction, an electrical connection with the electrode of the josephson junction is required, an oxide layer is formed on the surface of the electrode of the josephson junction, and in order to form a good electrical connection with the electrode of the josephson junction, one possible solution is to contact the electrode by puncturing the oxide layer with a probe. However, it is a very important link how to make good electrical connection of the probe to the electrode of the josephson junction without damaging the josephson junction.
An eleventh embodiment of the present invention provides an electrical contact connection system, by which the probe can be more accurately achieved to reach the interface of two film layers, for example, the interface of the electrode and the oxide layer. Accordingly, the invention can more conveniently realize the electric contact connection method in the invention by means of the system.
Referring to fig. 14, the electrical contact connection system includes:
A displacement adjustment assembly 21, a micro force sensor 23 provided on the displacement adjustment assembly 21, and a probe 1 provided on the micro force sensor 23;
a chip displacement table 7, and the probe 1 can relatively move with the chip displacement table 7 under the drive of the displacement adjusting component 21.
Further, the method further comprises the following steps: the processing module 331 receives the pressure detected by the micro force sensor 23 in real time, at least monitors the pressure value when the pressure is suddenly changed, and the processing module 331 controls the movement of the displacement adjusting assembly 21 according to the pressure value when the pressure is suddenly changed.
The processing module 331 is configured to continuously monitor the pressure to which the probe 1 is subjected during movement, and monitor a first abrupt change in the pressure, and monitor a second abrupt change in the pressure.
Wherein when the processing module 331 detects a first abrupt change in the pressure, continuing to cause the displacement adjustment assembly 21 to move the probe 1; when the processing module 331 detects a second abrupt change in the pressure, the displacement adjustment assembly 21 is immediately caused to stop moving the probe 1.
In order to make the method of the invention more accurate in pressure detection, in one embodiment, the probe 1 is placed on the head of the micro-sensor 23, and the probe 1 and the head of the micro-sensor 23 may be rigidly connected, thereby making the force transfer more direct.
The probe 1 is a tungsten needle or a tungsten alloy needle, a protective layer can be electroplated on the surface of the probe 1, and the diameter of the tip of the probe 1 is 0.1-50 mu m.
The chip displacement stage 7 is mainly used for carrying a part to be tested, such as a superconducting quantum chip with a josephson junction to be tested.
Example twelve
The twelfth embodiment of the invention provides a probe device, which can enable a probe to just pierce an oxide layer to be in contact with an electrode as much as possible, so that the damage to the electrode of the Josephson junction electrode is reduced as much as possible.
Referring to fig. 15, the present embodiment provides a probe apparatus for measuring a superconducting quantum chip, which includes a first probe 11, a second probe 12, a probe manipulation mechanism and a chip displacement table 7;
the probe control mechanism is used for controlling the first probe 11 and the second probe 12 to be needled down to the opposite side of the Josephson junction on the superconducting quantum chip 4, and enabling the first probe 11 and the second probe 12 to just puncture through an oxide layer on the electrode surface of the Josephson junction;
the chip displacement table 7 is used for bearing the superconducting quantum chip 4.
As an example, the probe manipulation mechanism includes a displacement adjustment assembly 21, and micro force sensors 23 fixed on the displacement adjustment assembly 21, the first probe 11 and the second probe 12 are respectively fixed on the corresponding micro force sensors 23, and each micro force sensor 23 is connected with the corresponding probe independently.
The present embodiment may be implemented on the basis of the eleventh embodiment, specifically, may be implemented by adding a set of displacement adjustment assembly 21, a micro force sensor 23 fixed on the displacement adjustment assembly 21, and a second probe 12 fixed on the example sensor 23 on the basis of the eleventh embodiment.
Thus, referring to fig. 16, the present embodiment can achieve the purpose of inserting needles on both sides of the josephson junction, and inserting needles on both sides to achieve the purpose of just inserting.
Example thirteen
The thirteenth embodiment of the invention provides a superconducting quantum bit junction resistance measurement system, which can enable a probe to just puncture an oxide layer to be contacted with an electrode as much as possible, thereby reducing the damage to the electrode of a Josephson junction electrode as much as possible and improving the accuracy of measurement.
Referring to fig. 17, the present embodiment provides a superconducting qubit junction resistance measurement system, including:
probe apparatus
A junction resistance measurement module 32, the junction resistance measurement module 32 being connected to the first probe 11 and the second probe 12, respectively.
The probe device may be a probe device provided in the twelfth embodiment of the present invention, which is not described herein repeatedly, and the corresponding technical effects are also applicable to the present embodiment.
The junction resistance measurement module 32 in the present invention may be a test meter unit (as described in example nine), or may be a module that performs only resistance measurement in the test meter unit.
According to the superconducting qubit junction resistance measurement system based on the embodiment, the probe can be accurate in place as far as possible, so that the measurement result of the Josephson junction resistance is high in accuracy.
Examples fourteen
The fourteen embodiment of the invention provides a superconducting quantum bit junction resistance measuring circuit, which can obtain higher measuring accuracy.
Referring to fig. 18, there is provided a superconducting qubit junction resistance measurement circuit, the josephson junction 41 comprising a first electrode and a second electrode, comprising:
a first probe 11 electrically connected to the first electrode, a first oxide layer 4021 is formed on the surface of the first electrode 4011, and the first probe 11 just pierces through the first oxide layer 4021 to form electrical contact with the first electrode 4011;
a second probe 12 electrically connected to the second electrode, a second oxide layer 4022 is formed on the surface of the second electrode 4012, and the second probe 12 just pierces through the second oxide layer 4022 to form electrical contact with the second electrode 4012;
A junction resistance measurement module 32 electrically connected to the first and second probes 11, 12 respectively, the junction resistance measurement module 32 being adapted to apply an electrical signal to the first and second probes 11, 12 to measure the resistance of the josephson junction.
In this embodiment, since the first probe 11 and the second probe are just penetrating through the oxide layer to be in electrical contact with the electrode, the detection accuracy can be effectively improved, and the interference of the oxide layer on the junction resistance can be reduced.
Example fifteen
The fifteenth embodiment of the invention provides a superconducting quantum bit junction resistance measuring method, which can obtain higher measuring accuracy.
Referring to fig. 19, the present embodiment provides a superconducting qubit junction resistance measurement method, including:
s1501, respectively enabling a first probe and a second probe to be downwards needled to the opposite side of a Josephson junction on a superconducting quantum chip, enabling the first probe to just puncture a first oxide layer on the surface of a first electrode of the Josephson junction, and enabling the second probe to just puncture a second oxide layer on the surface of a second electrode of the Josephson junction;
s1502, applying an electrical signal to the first and second probes, and measuring the resistance of the josephson junction.
Specifically, referring to fig. 17 and 18, in S1501, the step of making the first probe drop onto the superconducting quantum chip and just puncture the first oxide layer on the surface of the first electrode of the josephson junction includes:
s1501A1, moving the first probe 11 towards the first oxide layer 4021 on the surface of the first electrode of the josephson junction 41, and monitoring the pressure applied by the first probe 11 in real time;
s1501A2, monitoring the first abrupt change of the pressure, and continuing to move the first probe 11;
s1501A3, monitoring the second abrupt change of the pressure, and stopping the movement of the first probe 11 when the second abrupt change occurs, when the first probe 11 contacts the first electrode 4011.
In S1501, the step of bringing the second probe down onto the superconducting quantum chip and just penetrating the second oxide layer of the josephson junction second electrode surface comprises:
S1501B1, moving the second probe 12 towards the second oxide layer 4022 on the surface of the second electrode of the josephson junction 41, and monitoring the pressure applied by the second probe 12 in real time;
S1501B2, monitoring the first abrupt change in pressure and continuing to move the second probe 12;
S1501B3, monitoring the second abrupt change of the pressure, and stopping the movement of the second probe 12 when the second abrupt change occurs, when the second probe contacts the second electrode 4012.
The operation procedures of S1051A1 to S1051A3 and S1501B1 to S1501B3 are substantially the same, and may be performed as described in the above embodiment ten.
Examples sixteen
Referring to fig. 20, a sixteenth embodiment of the present invention provides a superconducting qubit junction resistance measurement method, which may be further optimized based on the seventh embodiment and the tenth embodiment, and the method includes:
s1601, bringing one of the first probe 11 and the second probe 12 into contact with the first oxide layer 4021 on the surface of the first electrode 4011, and inserting the other into contact with the first electrode 1011 while penetrating the first oxide layer 4021 based on pressure monitoring;
s1602, electrically breaking down the first oxide layer 4021 by the first probe 11 and the second probe 12;
s1603, bringing one of the third probe 13 and the fourth probe 14 into contact with the second oxide layer 4022 on the surface of the second electrode 4012, and monitoring that the other just pierces the second oxide layer 4022 and is in contact with the second electrode 4012 based on pressure;
s1604, electrically breaking down the second oxide layer 4022 by the third probe 13 and the fourth probe 14;
s1605, measuring resistance between the other of the first probe 11 and the second probe 12 and the other of the third probe 13 and the fourth probe 13.
In S1601, the pressure monitoring-based process may refer to the scheme described in embodiment ten, and the corresponding technical effects are also applicable to the present embodiment.
In S1603, the pressure monitoring-based process may refer to the scheme described in embodiment ten, and the corresponding technical effects are also applicable to the present embodiment.
In S1602, the process of performing the electrical breakdown may refer to the scheme described in embodiment seven, and the corresponding technical effects are also applicable to the present embodiment.
In S1604, the electrical breakdown may be performed by referring to the scheme described in embodiment seven, and the technical effects thereof are also applicable to the present embodiment.
According to the superconducting quantum bit junction resistance measuring method, on one hand, by means of pressure monitoring, probes are more accurate in place, and by means of electric breakdown on the oxide layer, interference of the oxide layer on junction resistance can be better reduced, and under the condition that the junction resistance is measured, the effect is more accurate; on the other hand, the pressure monitoring is used for realizing that the probe reaches the interface between the oxide layer and the electrode, so that the damage to the electrode can be reduced as much as possible.
Example seventeen
In this embodiment, in order to save the number of probes, one of the probes may be used as a common probe, and the purpose of saving the probes may be achieved by moving the common probe. This embodiment may be a further improvement of the sixteenth embodiment, and the probe sharing may be performed by referring to the scheme described in embodiment eight, which will not be described in detail here.
Example eighteen
In this embodiment, a superconducting qubit junction resistance measurement system is provided. Fig. 21 is a schematic structural diagram of a superconducting qubit junction resistance measurement system according to the present embodiment.
Referring to fig. 21, the qubit includes a josephson junction 41, the josephson junction 41 including a first electrode 4011 and a second electrode 4012, the first electrode 4011 having a first oxide layer 4021 formed thereon, and the second electrode 4012 having a second oxide layer 4022 formed thereon.
The superconducting qubit junction resistance measurement system includes:
an electrical contact connection system comprising a first probe 11, a second probe 12 and a third probe 13, said first probe 11 being adapted to cooperate with said second probe 12 and/or said third probe 13, said electrical contact connection system being adapted to cause said second probe 12 to penetrate said first oxide layer 4021 to a depth of thickness of said first oxide layer 4021 and to cause said third probe 13 to penetrate said second oxide layer 4022 to a depth of thickness of said second oxide layer 4022; and
A test meter unit 34, said test meter unit 34 being connected to said first probe 11, second probe 12 and said third probe 13 for applying a voltage to achieve an electrical breakdown, and for applying a test current through the broken down first oxide layer 4021, said josephson junction 41 and the broken down second oxide layer 4022 and measuring the voltage between the broken down first oxide layer 4021 and the broken down second oxide layer 4022.
In one implementation, the test meter unit 34 may include a constant current source assembly that provides the test current and a meter assembly that takes current and voltage measurements.
The electric contact connection system can accurately realize that the probe just reaches the interface of the electrode and the oxide layer.
Referring to fig. 21, the electrical contact connection system further includes:
a displacement adjustment assembly 21, a micro force sensor 23 provided on the displacement adjustment assembly 21, and a probe provided on the micro force sensor 23; wherein the displacement adjustment assembly 21 and the micro-sensor 23 are illustrated only on the third probe 13, it should be understood that each probe may be at least fixed to the displacement adjustment assembly 21, at least some of the probes may be fixed to the micro-sensor 23, some of the probes may be independent of each other, and the micro-sensors 23 to which the probes are fixed may be independent of each other.
The first probe 11, the second probe 12 and the third probe 13 can relatively move with the chip displacement table 7 under the driving of the displacement adjusting assembly 21.
Further, the method further comprises the following steps: the processing module 331 receives the pressure detected by the micro force sensor 23 in real time, at least monitors the pressure value when the pressure is suddenly changed, and the processing module 331 controls the movement of the displacement adjusting assembly 21 according to the pressure value when the pressure is suddenly changed.
The processing module 331 is configured to continuously monitor the pressure to which the probe is subjected during movement, and to monitor the first abrupt change in pressure and the second abrupt change in pressure.
The method of pressure monitoring and the operation process corresponding to the abrupt pressure change can refer to the scheme of embodiment ten, and the corresponding technical effects are also applicable to the embodiment.
To make the pressure detection more accurate, in one implementation, a probe is provided on the head of the micro-sensor 23, the probe and the head of said micro-sensor 23 may be rigidly connected, so that the transmission of the force is more direct.
The probe 1 is a tungsten needle or a tungsten alloy needle, a protective layer can be electroplated on the surface of the probe 1, and the diameter of the tip of the probe 1 is 0.1-50 mu m.
The chip displacement stage 7 is mainly used for carrying a part to be tested, such as a superconducting quantum chip with a josephson junction to be tested.
Wherein the first probe 11 can be moved on both sides of the josephson junction 41, for example to be able to perform both the breakdown of the first oxide layer 4021 on one side with the second probe 12 and the breakdown of the second oxide layer 4022 on the other side with the third pad 13. In this way, the number of probes can be reduced, and the complexity of the whole system can be reduced.
It will be appreciated that this embodiment may also include a fourth probe, such that, for example, the fourth probe is used to mate with the third probe 13 and the first probe 11 is used to mate with the second probe 12.
According to the superconducting quantum bit junction resistance measurement system provided by the embodiment, on one hand, by means of pressure monitoring, a probe is more accurate in place, and then by means of electric breakdown on an oxide layer, interference of the oxide layer on junction resistance can be better reduced, and under the condition, the junction resistance is measured, so that the effect is more accurate; on the other hand, the pressure monitoring is used for realizing that the probe reaches the interface between the oxide layer and the electrode, so that the damage to the electrode can be reduced as much as possible.
Examples nineteenth
In order to test the josephson junction, an electrical connection with the electrode of the josephson junction is required, an oxide layer is formed on the surface of the electrode of the josephson junction, and in order to form a good electrical connection with the electrode of the josephson junction, one possible solution is to contact the electrode by puncturing the oxide layer with a probe. However, it is a very important link how to make good electrical connection of the probe to the electrode of the josephson junction without damaging the josephson junction.
Based on this, in this embodiment, an electrical contact connection method is specifically proposed, and this method can make the probe just penetrate the oxide layer to contact with the electrode as much as possible, and reduce the damage to the electrode of the josephson junction electrode as much as possible.
In an embodiment of the present invention, please refer to fig. 22, the electrical contact connection method includes:
s1901, contacting a first probe with a first film layer;
s1902, moving the second probe towards the first film layer, and monitoring the resistance value between the first probe and the second probe in real time;
s1903, monitoring the first abrupt change of the resistance value, and continuing to move the second probe;
and S1904, monitoring the second mutation of the resistance value, and stopping the movement of the second probe when the second mutation occurs, wherein the second probe is in contact with the second film layer.
In S1901, the first probe is contacted with the first film layer, which may include contacting the surface of the first film layer, penetrating the first film layer, and penetrating the first film layer.
In a specific implementation, the second film layer is an electrode of the josephson junction electrode, and the first film layer is an oxide layer of the electrode.
For example, the electrode may be made of aluminum, niobium, or the like, and other superconducting material layers may be used in the present invention.
The thickness of the first film layer may be between 0.1nm and 5nm, for example 0.3nm, 0.5nm, 0.8nm, 1nm, 1.2nm, 1.5nm, 1.7nm, 2nm, 2.3nm, 2.6nm, 2.9nm, 3nm, 3.1nm, 3.4nm, 3.6nm, 3.8nm, 4nm, 4.3nm, 4.5nm, 4.8nm, etc.
In order to reduce the influence of the external environment, the method can be carried out in a dust-free room with a vibration isolation platform and a sound insulation box.
In a preferred option, the needle insertion position of the first probe is further away from the josephson junction than the needle insertion position of the second probe, as shown in fig. 23. For example, the needle-punching position of the first probe is 20 to 200 μm from the junction region, whereby the first probe is located away from the junction region with negligible effect on the junction.
In addition, the first probe can be a relatively thick probe, and can be easily penetrated or penetrated through an oxide layer on the surface of the electrode.
In one embodiment, in S1901, the first probe is brought into contact with a first membrane layer by monitoring the pressure to which the first probe is subjected.
For example, the first probe may be brought into contact with the first film layer in the manner described in embodiment ten.
In S1902, at the time of the first start-up of the second probe, since it has not been in contact with the first film layer yet, the resistance value between the first probe and the second probe tends to infinity (10 mΩ or more).
As an example, in S1903, the first mutation is a decrease in resistance value to 10kΩ to 10mΩ. When the first mutation occurs, it means that the second probe is changed from the non-contact state to the contact state with the first membrane layer.
The restriction factors for the first mutation include probe material, membrane material, etc.
The second probe will continue to move, i.e. continue deep into the first membrane layer, upon the first abrupt change, during which the resistance value typically continues to drop.
As the second probe goes deeper, it is considered that the second probe just passes through the first film layer and contacts the second film layer when the second mutation occurs in the resistance value.
As an example, in S1904, the second mutation is such that the resistance value becomes 100 Ω to 1000 Ω, for example, 40 to 150 Ω.
In S1904, upon detecting a second abrupt change in the resistance value, the second probe is stopped from moving to avoid continuing to stick into the second film layer.
Experiments prove that the method of the embodiment of the invention can realize the electric connection between the second probe and the electrode, and the second probe only pierces through the oxide layer and does not damage the electrode, or the probe only leaves a tiny pit on the surface of the electrode, so that the damage is tiny and the performance of the Josephson junction is hardly affected.
In addition, in the embodiment of the invention, the second probe moves at a constant speed at a slow speed. On the one hand, the probe speed is not easily high due to the thin oxide layer, and on the other hand, the movement is stopped immediately when the target position is reached.
For example, the second probe movement speed is 10nm/s to 1 μm/s.
The electrical contact connection method provided by the embodiment can enable the probe to just pierce through the oxide layer to be in contact with the electrode as much as possible, and reduce the damage to the electrode of the Josephson junction electrode as much as possible.
Example twenty
In order to test the josephson junction, an electrical connection with the electrode of the josephson junction is required, an oxide layer is formed on the surface of the electrode of the josephson junction, and in order to form a good electrical connection with the electrode of the josephson junction, one possible solution is to contact the electrode by puncturing the oxide layer with a probe. However, it is a very important link how to make good electrical connection of the probe to the electrode of the josephson junction without damaging the josephson junction.
According to the twenty-first embodiment of the invention, an electrical contact connection system is provided, and by using the electrical contact connection system, the probe can accurately reach the interface of two film layers, for example, the interface of an electrode and an oxide layer. Accordingly, with the aid of the system, the method of the invention can be implemented more precisely.
Referring to fig. 24, the electrical contact connection system includes:
a displacement adjustment assembly 21, a first probe 11 and a second probe 12 provided on the displacement adjustment assembly 21;
a resistance monitoring module 33, wherein the first probe 11 and the second probe 12 are connected with the resistance monitoring module 33; and
the first probe 11 and the second probe 12 can respectively move relative to the chip displacement table 7 under the drive of the displacement adjusting assembly 21.
Further, the resistance monitoring module 33 is configured to monitor the detected resistance value in real time, and control the movement of the displacement adjustment assembly 21 when the resistance value is suddenly changed.
Further, a micro force sensor 23 is also included, in order to make the method of the present invention more accurate in pressure detection, in one embodiment, the first probe 11 is disposed on the probe of the micro force sensor 23, and the first probe 11 and the probe of the micro force sensor 23 may be rigidly connected, so that force is transferred more directly.
Further still include: the processing module 331 receives the pressure detected by the micro force sensor 23 in real time, records at least the pressure value when the pressure is suddenly changed, and controls the movement of the displacement adjusting assembly 21 according to the pressure value when the pressure is suddenly changed.
The processing module 331 is configured to continuously monitor the pressure to which the first probe 11 is subjected while moving, and monitor a first abrupt change in the pressure, and monitor a second abrupt change in the pressure.
For example, when the processing module 331 detects a first abrupt change in the pressure, the displacement adjustment assembly 21 is immediately caused to stop moving the first probe 11, or the displacement adjustment assembly 21 is continuously caused to move the first probe 11, and the first probe 11 can be stopped at any time as needed; when the processing module 331 detects a second abrupt change in the pressure, the displacement adjustment assembly 21 is immediately caused to stop moving the first probe 11.
The processing module 331 may be integrated in the resistance monitoring module 33, i.e. the processing module 331 may control the movement of the displacement adjustment assembly 21 according to the pressure signal, or may control the movement of the displacement adjustment assembly 21 according to the resistance signal.
The first probes 11 and the second probes 12 are tungsten needles or tungsten alloy needles, the surfaces of the first probes 11 and the second probes 12 can be electroplated with a protective layer, and the first probes 11 are thicker than the second probes 12.
For example, the first probe 11 has a shank diameter of 10-500 μm and a tip diameter of 0.5-15 μm, and the second probe 12 has a shank diameter of 5-50 μm and a tip diameter of 0.2-1 μm.
The first probe 11 is relatively thick to facilitate easy penetration of the oxide layer of the electrode of the josephson junction. The second probe 12 is thinner to minimize damage to the electrode so that the impact on the structure is negligible.
The chip displacement stage 7 is mainly used for carrying a component to be tested, for example a superconducting quantum chip with a josephson junction.
Example twenty-one
According to the twenty-first embodiment of the invention, the probe device is provided, and the probe can just penetrate through the oxide layer to be in contact with the electrode as much as possible, so that the damage to the electrode of the Josephson junction electrode is reduced as much as possible.
In one embodiment, please refer to fig. 25, a probe apparatus is provided for measuring a superconducting quantum chip, which includes a first probe 11, a second probe 12, a third probe 13, a probe manipulation mechanism, a resistance monitoring module 33, and a chip displacement stage 7;
the probe manipulation mechanism is used for manipulating the first probe 11 to be needled to at least one side of a Josephson junction on the superconducting quantum chip 4 and enabling the first probe 11 to be in contact with an oxide layer on the electrode surface of the Josephson junction, and the probe manipulation mechanism is also used for manipulating the second probe 12 and the third probe 13 to be needled to two sides of the Josephson junction on the superconducting quantum chip respectively and enabling the second probe 12 and the third probe 13 to just puncture the oxide layer on the electrode surface of the Josephson junction;
the first probe 11, the second probe 12 and the third probe 13 are all connected with the resistance monitoring module 33 to obtain a resistance value between the first probe and the second probe and a resistance value between the first probe and the third probe;
the chip displacement table 7 is used for bearing the superconducting quantum chip 4.
Further, the probe manipulation mechanism is further used for manipulating the lower needle of the fourth probe 14 to the side of the superconducting quantum chip 4, which is not subjected to the lower needle of the first probe 11, and bringing the fourth probe 13 into contact with an oxide layer of an electrode surface of the josephson junction, and the fourth probe 14 is connected with the resistance monitoring module 33.
As an example, the first and fourth probes 11 and 14 have a shank diameter of 10-500 μm and a tip diameter of 0.5-15 μm, and the second and third probes 12 and 13 have a shank diameter of 5-50 μm and a tip diameter of 0.2-1 μm.
In one implementation, the probe manipulation mechanism includes a displacement adjustment assembly 21, a micro force sensor 23 fixed on the displacement adjustment assembly 21, the first probe 11 and the fourth probe 14 are respectively fixed on one micro force sensor 23, and the second probe 12 and the third probe 13 are fixed on the displacement adjustment assembly 21.
Further, the method further comprises the following steps: the processing module 331 receives the pressure detected by the micro force sensor 23 in real time, at least monitors the pressure value when the pressure is suddenly changed, and the processing module 331 controls the movement of the displacement platform according to the pressure value when the pressure is suddenly changed.
Examples twenty two
The twenty-second embodiment of the invention provides a superconducting quantum bit junction resistance measurement system, which can enable a probe to just puncture an oxide layer to be contacted with an electrode as much as possible, thereby reducing the damage to the electrode of a Josephson junction electrode as much as possible and improving the accuracy of measurement.
Referring to fig. 26, the present embodiment provides a superconducting qubit junction resistance measurement system, including:
probe apparatus
A junction resistance measurement module 32, the junction resistance measurement module 32 being connected to the second probe 12 and the third probe 13, respectively.
The probe apparatus may be a probe apparatus provided in twenty-first embodiment of the present invention, and the description thereof will not be repeated herein, and the corresponding technical effects are also applicable to the present embodiment.
Further, in the present embodiment, the junction resistance measurement module 32 may be replaced with the test meter unit 34, so that breakdown of the oxide layer may also be performed in the present embodiment.
According to the superconducting qubit junction resistance measurement system based on the embodiment, the probe can be accurate in place as far as possible, so that the measurement result of the Josephson junction resistance is high in accuracy.
Examples twenty-three
The twenty-third embodiment of the invention provides a superconducting quantum bit junction resistance measurement method, which can obtain higher measurement accuracy.
Referring to fig. 26-27, the present embodiment provides a superconducting qubit junction resistance measurement method, which includes:
s2601, respectively making the second probe 12 and the third probe 13 down to opposite sides of the josephson junction on the superconducting quantum chip 4, and making the second probe 12 and the third probe 13 just pierce through an oxide layer on the electrode surface of the josephson junction;
S2602, applying an electrical signal to the second probe 12 and the third probe 13, and measuring the resistance of the josephson junction.
Specifically, in S2601, the step of making the second probe 12 drop onto the superconducting quantum chip 4 and just puncture the oxide layer on the surface of the josephson junction electrode includes:
s2601A1 contacting a first probe 11 with a first oxide layer on one side of the josephson junction;
S2601A2, moving a second probe 12 to a first oxide layer on one side of the Josephson junction, and monitoring the resistance value between the first probe and the second probe 12 in real time;
s2601A3, monitoring the first abrupt change of the resistance value, and continuing to move the second probe 12;
s2601A4, monitoring a second abrupt change in said resistance value and stopping movement of said second probe 12 when said second abrupt change occurs, while said second probe 12 is in contact with the first electrode of said josephson junction.
Wherein the needle insertion position of the first probe 11 is far from the josephson junction than the needle insertion position of the second probe 12, as illustrated in fig. 23 by the relative positions of the needle insertion with the first and second probes.
Specifically, in S2601, the step of making the third probe 13 drop onto the superconducting quantum chip and just puncture the oxide layer on the surface of the josephson junction electrode includes:
S2601B1 contacting the first probe 11 or the fourth probe 14 with a second oxide layer on the other side of the josephson junction;
S2601B2 moving the third probe 13 towards the second oxide layer on the other side of the josephson junction and monitoring the resistance value between the first probe 11 or the fourth probe 14 and the third probe 13 in real time;
S2601B3, monitoring the first abrupt change of the resistance value, and continuing to move the third probe 13;
S2601B4, monitoring a second abrupt change of said resistance value and stopping movement of said third probe 13 when said second abrupt change occurs, while said third probe 13 is in contact with the second electrode of said josephson junction.
Wherein the needle insertion position of the first or fourth probe is further away from the josephson junction than the needle insertion position of the third probe, as illustrated in fig. 28, the relative positions when the first and third probes are used for needle insertion, as illustrated in fig. 29.
The operation procedures of S2601A1 to S2601A4 and S2601B1 to S2601B4 are substantially the same, and can be performed as described in the nineteenth embodiment.
In the measuring process, the change condition of the resistance between the probes is monitored in real time, so that the probes can be precisely needled to the interface between the oxide layer of the Josephson junction electrode and the electrode, the probes can be well electrically connected with the electrode of the Josephson junction without damaging the electrode, the Josephson junction resistance is measured on the basis, and the measuring accuracy can be effectively improved.
Examples twenty-four
The twenty-fourth embodiment of the present invention provides a superconducting quantum chip nondestructive testing probe device, please refer to fig. 30, including: the probe 1 and the probe manipulation mechanism 2.
The probe control mechanism 2 includes a displacement adjusting assembly 21, the displacement adjusting assembly 21 is used to pull the probe 1 down to the superconducting quantum chip to be detected, and then measurement of the superconducting quantum chip to be detected is completed through other auxiliary means, for example, measurement of parameters such as resistance of the superconducting quantum chip, and the specific measurement process is not described herein.
Wherein, in order to make things convenient for operating personnel to observe the needle dynamics of inserting into probe 1 to prevent to wait to detect superconductive quantum chip and cause wearing and tearing. The probe control mechanism 2 comprises a micro-force sensor 23, and the micro-force sensor 23 is connected with the probe 1 and is used for detecting the needle falling force of the probe 1.
In order to facilitate the probe 1 to be placed at the designated position of the superconducting quantum chip to be detected, the situation that the superconducting quantum chip to be detected is scrapped or the superconducting quantum chip cannot be detected due to too deep or too shallow penetration is prevented. The displacement adjusting assembly 21 comprises a Z-axis displacement rough adjustment table 212A and a Z-axis displacement fine adjustment table 211A, and the Z-axis direction of the probe 1 is primarily adjusted and precisely adjusted by setting the Z-axis displacement rough adjustment table 212A and the Z-axis displacement fine adjustment table 211A, so that the probe 1 is needled down to the designated position of the superconducting quantum chip to be detected, and the problem caused by the fact that the probe 1 is needled down too deeply or too shallowly can be correspondingly avoided.
Specifically, one end of the Z-axis displacement coarse adjustment stage 212A is fixed to the Z-axis displacement fine adjustment stage 211A, and the Z-axis displacement fine adjustment stage 211A is pulled to perform preliminary adjustment (i.e., coarse adjustment) along the Z-axis direction; one end of the Z-axis displacement fine adjustment table 211A, which is far away from the Z-axis displacement coarse adjustment table 212A, is connected with the probe 1, and the probe 1 is pulled to be precisely adjusted (i.e., finely adjusted) along the Z-axis direction, so that the probe 1 is needled down to the superconducting quantum chip to be detected.
In this embodiment, when the probe 1 is far away from the superconducting quantum chip, the Z-axis displacement rough adjustment stage 212A can be used to adjust the probe 1 to a position close to the superconducting quantum chip, and then the Z-axis displacement fine adjustment stage 211A is used to slowly pull the probe 1 to a designated position of the superconducting quantum chip.
The embodiment is based on the superconducting quantum chip nondestructive testing probe device, and can effectively improve the adjusting speed and the adjusting accuracy of an operator when the probe 1 is adjusted along the Z-axis direction or other directions, so that the problem that the superconducting quantum chip cannot be detected or scrapped due to too deep or too shallow downward penetration of the probe 1 can be avoided.
Examples twenty-five
With continued reference to fig. 30, in this embodiment, a support 22 may be added to the twenty-fourth embodiment to provide motion support for the Z-axis coarse stage 212 AA.
The probe manipulation mechanism 2 further comprises the support 22; the Z-axis displacement coarse adjustment stage 212A is slidably mounted on the support member 22 along the Z-axis, and provides a motion support for the Z-axis displacement coarse adjustment stage 212A, so that the Z-axis displacement coarse adjustment stage 212A can smoothly drive the Z-axis displacement fine adjustment stage 211A and the probe 1 to move along the Z-axis direction, that is, the purpose of primarily adjusting the probe 1 along the Z-axis direction is achieved.
In this embodiment, a specific Z-axis coarse adjustment stage 212A is provided to meet the requirement of coarse adjustment of the probe set 1. The coarse Z-axis displacement stage 212A includes a micrometer displacer 2121, one side of the micrometer displacer 2121 is slidably mounted on the outer wall of the support 22 along the Z-axis, and the other side is fixed to the fine Z-axis displacement stage 211A.
By sliding the micrometer shifter 2121, the Z-axis displacement fine adjustment stage 211A is pulled to move (since the probe 1 is arranged on the Z-axis displacement fine adjustment stage 211A), so that the purpose of roughly adjusting the probe 1 is achieved.
The micrometer displacer 2121 and the support 22 can be driven in the Z-axis direction by a motor and a screw in the prior art (or can be manually adjusted by a hand, such as by turning the screw by a handle).
In addition, in order to improve the stability of the connection between the Z-axis displacement fine adjustment stage 211A and the Z-axis displacement coarse adjustment stage 212A. The Z-axis coarse stage 212A also includes an L-shaped adapter plate 2122.
The L-shaped adapter plate 2122 is fixedly connected with the micrometer shifter 2121; the Z-axis displacement fine adjustment table 211A is disposed on the upper surface of one side of the L-shaped adapter plate 2122, that is, a supporting force opposite to the gravity force of the Z-axis displacement fine adjustment table 211A is provided by the bearing force of the upper surface of the L-shaped adapter plate 2122.
In addition, referring to fig. 30 and 31, a limiting chamber 9 is formed between the L-shaped adapter plate 2122 and the micrometer shifter 2121, a limiting bar 221 matching with the limiting chamber 9 is disposed on the supporting member 22, and the micrometer shifter 2121 is limited by the limiting bar 221 and the limiting chamber 9 (i.e. the micrometer shifter 2121 cannot slide along the Y-axis direction), so that the micrometer shifter 2121 can only slide along the Z-axis direction of the predetermined track (i.e. the limiting chamber 9).
In this embodiment, referring to fig. 32, a specific Z-axis displacement fine adjustment stage 211A is provided to meet the requirement of driving the probe set 1 for fine adjustment. The Z-axis displacement fine tuning stage 211A includes a nano-shifter 2111 and a fixed end 2112.
One end of the nano shifter 2111 is slidably mounted on the fixed end 2112 along the Z axis, the other end is connected with the probe 1, and the fixed end 2112 is fixedly mounted on the upper surface of the L-shaped adapter plate 2122.
Through the relative sliding between the nanometer shifter 2111 and the fixed end 2112 (that is, the position of the fixed end 2112 is unchanged, the nanometer shifter 2111 moves along the Z-axis direction), the probe 1 is finely adjusted in the Z-axis direction, so that the probe 1 is downwards pricked to a designated position, and further, the condition that the superconducting quantum chip is scrapped or cannot be detected due to too deep or too shallow downwards pricking of the probe 1 is avoided.
Specifically, the nano-shifter 2111 is in a "T" shape, the fixed end 2112 is in a "U" shape, the nano-shifter 2111 can move in the fixed end 2112, and the relative stroke range of the two is 10 μm-1 mm.
Furthermore, in order to facilitate the adjustment of the X-axis and Y-axis directions of the probe 1, the probe 1 is positioned above the superconducting quantum chip to be detected, so as to facilitate the detection. The displacement adjustment assembly 21 further includes an XY displacement table 213, and the bottom end of the support member 22 is fixedly connected with the XY displacement table 213.
That is, the support 22 is driven to slide along the X-axis and Y-axis directions by the XY displacement stage 213, and the support 22, the Z-axis displacement rough adjustment stage 212A, Z, the axis displacement fine adjustment stage 211A and the probe 1 are connected in pairs, so that the purpose of driving the probe 1 to slide along the X-axis and Y-axis directions can be achieved, and the probe 1 can be conveniently adjusted to the upper part of the superconducting quantum chip to be detected.
The XY displacement stage 213 may be a stage formed by components such as a micrometer head, a bracket, a locking screw, and two perpendicular and staggered cross rails, and the specific application method is to rotate the micrometer head to make the cross rails dislocate, so as to achieve the driving purpose. The specific connection and installation manner are not described here.
In addition, in order to improve stability when the XY shift stage 213 moves. The bottom of the XY displacement table 213 is provided with an adsorption platform 8, and the adsorption platform 8 is connected with other supporting members, so that the XY displacement table 213 can stably drive the supporting members 22 to slide along the X-axis and Y-axis directions.
In addition, a magnetic attraction platform can be arranged at the bottom of the probe control mechanism 2, so that detachable connection with other devices or modules can be realized. In addition, a mechanical fixing device may be provided.
Examples twenty-six
Referring to fig. 33 and 34, the present embodiment may further define the probe 1 on the basis of twenty-fifth embodiment, so as to apply a corresponding electrical breakdown signal to the probe 1, thereby meeting the requirements of detecting the superconducting quantum chip to be detected.
In this embodiment, the probe 1 includes a holding portion 1A, a needle 1B, and a lead 1C.
The clamping part 1A is disposed on the Z-axis displacement fine adjustment table 211A, and further, is disposed on the Z-axis displacement fine adjustment table 211A through a probe arm 25, for example, the clamping part 1A is clamped and fixed by the probe arm 25.
Further, the micro force sensor 23 is connected to the holding portion 1A of the probe via the probe arm 25.
The probe arm 25 may be an integral part of the micro-sensor 23.
The needle 1B is inserted into the clamping part 1A, one end of the needle penetrates through the clamping part 1A and extends to the upper part of the superconducting quantum chip to be detected, and the other end of the needle is connected with the lead 1C.
The wire 1C is externally connected with a power module, and the power module provides power for the wire 1C so as to apply an electrical breakdown signal to the needle 1B, so as to meet the detection requirement of the superconducting quantum chip to be detected, and the specific detection method is already mentioned above, and is not described herein.
In a further implementation manner, in order to facilitate the operator to observe the position of the needle 2, the probe 1 forms an included angle α with the plane of the XY axis, and the included angle α ranges from 70 ° to 85 °. Specifically, the included angle α may be set to 71 °, 73 °, 75 °, 77 °, 79 °, 81 °, 83 °, and the like. This can prevent that contained angle alpha from being 90 and operating personnel from being in the perpendicular top view of Z axle direction, the pointed end of syringe needle 1B is sheltered from, leads to operating personnel unable observation syringe needle 1B pointed end position (i.e. operating personnel unable judgement syringe needle 1B and the relative position of waiting to test superconducting quantum chip) to can cause the condition that the detection effect is poor.
Examples twenty-seven
As shown in fig. 35, the present embodiment proposes a nondestructive inspection probe stage based on a superconducting quantum chip, which includes a plurality of probe devices, a support structure 6, and a chip displacement stage 7.
The supporting structure 6 comprises a supporting platform 61, the chip displacement table 7 is arranged on the supporting platform 61 and is used for bearing and driving the superconducting quantum chip to be detected to move, the superconducting quantum chip to be detected is borne by the chip displacement table 7, and the superconducting quantum chip to be detected can be driven to the position right below the probe device, so that the situation that the superconducting quantum chip to be detected cannot be detected and the probe device cannot be detected due to dislocation is prevented.
The probe device comprises a probe 1 and a probe manipulation mechanism 2, the probe manipulation mechanism 2 being mounted on the support structure 6. For example, it may be fixed to the support platform 61 by magnetic attraction. A magnetic attraction platform can be arranged at the bottom of the probe control mechanism 2. In addition, other means, such as mechanical connection, are also possible.
The probe control mechanism 2 comprises a Z-axis displacement fine adjustment table 211A, the probe 1 is arranged on the Z-axis displacement fine adjustment table 211A, the Z-axis displacement fine adjustment table 211A pulls the probe 1 to be precisely adjusted along the Z-axis direction, the probe is driven to be delivered to the superconducting quantum chip to be detected, and the Z-axis displacement fine adjustment table 211A is utilized to drive the probe 1 to be precisely adjusted along the Z-axis direction, so that the situation that the superconducting quantum chip to be detected is scrapped or cannot be detected due to too deep or too shallow penetration of the probe 1 can be effectively avoided.
In this embodiment, by matching the plurality of probe devices, the support structure 6 and the chip displacement table 7, the probe 1 can be precisely positioned in the detection process, and the detection of the superconducting qubit junction resistance can be performed on the basis, and the probe table has higher detection precision.
Examples twenty-eight
Referring to fig. 35 and 36, the present embodiment specifically defines the structure of the chip displacement stage 7, and the chip displacement stage 7 enables the superconducting quantum chip to be detected to be located directly under the probe 1 during detection.
The chip displacement table 7 includes an XYZ three-axis displacement table 71 and a rotational placement table 72.
The XYZ three-axis displacement platform 71 is disposed on the support platform 61, and the rotary placement platform 72 is disposed on an upper surface of the XYZ three-axis displacement platform 71, and is used for carrying and driving the superconducting quantum chip to be detected to horizontally rotate in a plane parallel to the support platform 61.
So that the superconducting quantum chip to be tested can move along the X axis, the Y axis, the Z axis and the directions parallel to the supporting platform 61, and the superconducting quantum chip to be tested can be quickly adjusted to a proper position (namely, the superconducting quantum chip to be tested is positioned under the probe 1) for detection.
With continued reference to fig. 35 and 36, in this embodiment, a specific support structure 6 is further provided to meet the load bearing requirements of the probe apparatus.
The support structure 6 further comprises a support plate 62 and support columns (not shown in the figures).
The supporting plate 62 is fixedly connected with the supporting platform 61 through the supporting columns, and the probe control mechanism 2 is installed on the supporting plate 62.
Specifically, the probe manipulation mechanism 2 further includes a Z-axis displacement rough adjustment stage 212A, a support 22, and an XY-displacement stage 213.
One end of the Z-axis displacement rough adjustment stage 212A is fixed to the Z-axis displacement fine adjustment stage 211A, and the Z-axis displacement fine adjustment stage 211A is pulled to perform preliminary adjustment (i.e., rough adjustment) along the Z-axis direction.
The Z-axis coarse adjustment stage 212A is slidably mounted on the support member 22 along the Z-axis, and provides a motion support for the Z-axis coarse adjustment stage 212A, and since the Z-axis fine adjustment stage 211A is connected to the probe 1, the Z-axis coarse adjustment stage 212A can drive the probe 1 to perform coarse adjustment.
The bottom end of the supporting member 22 is fixed to the XY displacement table 213, the XY displacement table 213 drives the supporting member 22 to slide along the X-axis and the Y-axis, and the supporting member 22, the Z-axis displacement coarse adjustment table 212, the A, Z-axis displacement fine adjustment table 211A and the probe 1 are connected in pairs, so that the purpose of driving the probe 1 to slide along the X-axis and the Y-axis can be achieved, and the probe 1 can be conveniently adjusted to the upper portion of the superconducting quantum chip to be detected.
The XY displacement stage 213 may be a stage formed by components such as a micrometer head, a bracket, a locking screw, and two perpendicular and staggered cross rails, and the specific application method is to rotate the micrometer head to make the cross rails dislocate, so as to achieve the driving purpose. The specific connection and installation manner are not described here.
In addition, in order to improve stability when the XY shift stage 213 moves. The bottom of the XY displacement table 213 is provided with an adsorption platform 8, and the adsorption platform 8 is connected with other supporting members, so that the XY displacement table 213 can stably drive the supporting members 22 to slide along the X-axis and Y-axis directions.
Wherein, in order to make things convenient for operating personnel to observe the needle dynamics of inserting into probe 1 to prevent to wait to detect superconductive quantum chip and cause wearing and tearing. The probe control mechanism 2 comprises a micro-force sensor 23, wherein the micro-force sensor 23 is arranged at the tail end of the probe 1 and is used for detecting the needle falling force of the probe 1.
In this embodiment, a specific Z-axis coarse adjustment stage 212A is provided to meet the detection requirement. The coarse Z-axis displacement stage 212A includes a micrometer displacer 2121, one side of the micrometer displacer 2121 is slidably mounted on the outer wall of the support 22 along the Z-axis, and the other side is fixed to the fine Z-axis displacement stage 211A.
By sliding the micrometer shifter 2121, the Z-axis displacement fine adjustment stage 211A is pulled to move (since the probe 1 is arranged on the Z-axis displacement fine adjustment stage 211A), so that the purpose of roughly adjusting the probe 1 is achieved.
The micrometer displacer 2121 and the support 22 can be driven in the Z-axis direction by a motor and a screw in the prior art (or can be manually adjusted by a hand, such as by turning the screw by a handle).
In addition, in order to improve the stability of the connection between the Z-axis displacement fine adjustment stage 211A and the Z-axis displacement coarse adjustment stage 212A. The Z-axis coarse stage 212A also includes an L-shaped adapter plate 2122.
The L-shaped adapter plate 2122 is fixedly connected with the micrometer shifter 2121; the Z-axis displacement fine adjustment table 211A is disposed on the upper surface of the L-shaped adapter plate 2122, that is, a supporting force opposite to the gravity force of the Z-axis displacement fine adjustment table 211A is provided by the bearing force of the upper surface of the L-shaped adapter plate 2122.
In addition, as shown in fig. 30 and 31, a limiting chamber 9 is formed between the L-shaped adapter plate 2122 and the micrometer shifter 2121, a limiting bar 221 matched with the limiting chamber 9 is disposed on the supporting member 22, and the micrometer shifter 2121 is limited by the limiting bar 221 and the limiting chamber 9 (i.e. the micrometer shifter 2121 cannot slide along the Y-axis direction), so that the micrometer shifter 2121 can only slide along the Z-axis direction of the predetermined track (i.e. the limiting chamber).
In a further embodiment, referring to fig. 30 and 32, a specific Z-axis displacement fine adjustment stage 211A is provided to meet the requirement of fine adjustment of the probe set 1. The Z-axis displacement fine tuning stage 211A includes a nano-shifter 2111 and a fixed end 2112.
One end of the nano shifter 2111 is slidably mounted on the fixed end 2112 along the Z axis, the other end is connected with the probe 1, and the fixed end 2112 is fixedly mounted on the upper surface of the L-shaped adapter plate 2122.
Through the relative sliding between the nanometer shifter 2111 and the fixed end 2112 (that is, the position of the fixed end 2112 is unchanged, the nanometer shifter 2111 moves along the Z-axis direction), the probe 1 is finely adjusted in the Z-axis direction, so that the probe 1 is downwards pricked to a designated position, and further, the condition that the superconducting quantum chip is scrapped or cannot be detected due to too deep or too shallow downwards pricking of the probe 1 is avoided.
Specifically, the nano-shifter 2111 is in a "T" shape, the fixed end 2112 is in a "U" shape, the nano-shifter 2111 can move in the fixed end 2112, and the relative stroke range of the two is 10 μm-1 mm.
In a further implementation, the number of support plates 62 and probe devices is further defined to facilitate better inspection of the superconducting quantum chip to be inspected.
Specifically, referring to fig. 37 and 38, two support plates 62 may be provided, and the two support plates 62 are located at both sides of the chip displacement table 7.
Four probe devices are provided, two of which are provided on one support plate 62, and the other two of which are provided on the other support plate 62.
In this embodiment, an electrical breakdown signal is applied to two probes 1 located on the same side, so that electrodes on two sides of the superconducting quantum chip to be detected are electrically connected with the probes 1, then one probe 1 is arbitrarily taken from two sides of the superconducting quantum chip to be detected (for convenience of description, the two selected probes 1 are respectively marked as a first probe and a second probe), and a junction resistance measurement module is additionally arranged between the first probe and the second probe, so that measurement of the junction resistance of the superconducting quantum bit to be detected can be completed, and the purpose of conveniently detecting the resistance of the superconducting quantum chip to be detected is achieved.
The probe control mechanism 2 drives the probe 1 to displace and lower the probe to contact with the superconducting quantum chip to be detected on the upper surface of the chip displacement table 7.
In addition, gaps for preventing collision are reserved among the four probes 1, for example, the gaps can be between 0.5 mm and 1mm, so that the plurality of probe manipulation mechanisms 2 are prevented from being damaged due to collision (namely, the plurality of supporting pieces 22 are prevented from being collided when driven by the XY displacement table 213).
In the present embodiment, the probe 1 is further defined for the sake of convenience in applying an electrical breakdown signal to the probe 1. Specifically, referring to fig. 33 and 34, the probe 1 includes a clamping portion 1A, a needle 1B, and a conductive wire 1C.
The clamping part 1A is disposed on the Z-axis displacement fine adjustment table 211A, and further, is disposed on the Z-axis displacement fine adjustment table 211A through a probe arm 25, for example, the clamping part 1A is clamped and fixed by the probe arm 25.
Further, the micro force sensor 23 is connected to the holding portion 1A of the probe via the probe arm 25.
The probe arm 25 may be an integral part of the micro-sensor 23.
The needle 1B is inserted into the clamping portion 1A, one end of the needle penetrates through the clamping portion 1A and extends to the upper portion of the superconducting quantum chip to be detected, the other end of the needle is connected with the wire 1C, the wire 1C is externally connected with a power module, and the power module is used for providing power for the wire 1C so as to apply an electrical breakdown signal to the needle 1B, so that the detection requirement of the superconducting quantum chip to be detected can be met, and the specific detection method is repeated herein.
In this embodiment, a microscope 5 is also provided to allow the operator to observe the position of the needle 1B in real time, further preventing the needle 1B from penetrating too deeply or too shallowly. The microscope 5 is arranged above the needle head 1B, and the microscope 5 is externally connected with an intelligent terminal (such as a computer and the like), so that an operator can observe conveniently.
In order to make the microscope 5 always observe the tip of the needle 1B, i.e. to avoid that the needle 1B is inserted too deeply or too shallowly due to an improper observation position. The probe 1 and the plane of the XY axis form an included angle α, and the included angle α ranges from 70 ° to 85 °, specifically, the included angle α may be set to 71 °, 73 °, 75 °, 77 °, 79 °, 81 °, 83 °, and so on, so that the tip of the needle 1B is exposed below the microscope 5.
In the description of the present specification, a description of the terms "one embodiment," "some embodiments," "examples," or "particular examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments. Further, one skilled in the art can engage and combine the different embodiments or examples described in this specification.
The foregoing is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Any person skilled in the art will make any equivalent substitution or modification to the technical solution and technical content disclosed in the invention without departing from the scope of the technical solution of the invention, and the technical solution of the invention is not departing from the scope of the invention.

Claims (17)

1. A method for measuring resistance of a superconducting qubit junction, comprising:
contacting one of the first probe and the second probe with a first oxide layer on the surface of a first electrode, and penetrating the other into the first oxide layer and contacting the first electrode based on pressure monitoring;
electrically breaking down the first oxide layer by the first probe and the second probe;
contacting one of the third probe and the fourth probe with a second oxide layer on the surface of a second electrode, and penetrating the other into the second oxide layer and contacting the second electrode based on pressure monitoring;
electrically breaking down the second oxide layer by the third probe and the fourth probe;
a resistance is measured between the other of the first probe and the second probe and the other of the third probe and the fourth probe.
2. The method of superconducting qubit junction resistance measurement of claim 1 wherein the inserting the other into the first oxide layer and into contact with the first electrode based on pressure monitoring comprises:
moving the other of the first probe and the second probe towards the first oxide layer, and monitoring the pressure exerted by the other of the first probe and the second probe in real time;
Monitoring a first abrupt change in the pressure and continuing to move the other of the first and second probes;
a second abrupt change in the pressure is monitored and movement of the other of the first and second probes is stopped when the second abrupt change occurs, while the other of the first and second probes is in contact with the first electrode.
3. The method of superconducting qubit junction resistance measurement of claim 1 wherein the inserting the other into the second oxide layer and into contact with the second electrode based on pressure monitoring comprises:
moving the other of the third probe and the fourth probe towards the second oxide layer, and monitoring the pressure exerted by the other of the third probe and the fourth probe in real time;
monitoring the first abrupt change in pressure and continuing to move the other of the third probe and the fourth probe;
a second mutation in the pressure is monitored and movement of the other of the third and fourth probes is stopped when the second mutation occurs, while the other of the third and fourth probes is in contact with the second electrode.
4. A method of measuring the resistance of a superconducting qubit junction according to claim 2 or claim 3, wherein the first abrupt change is a change in pressure from 0 to 0.1 to 10 μn.
5. The method of measuring superconducting qubit junction resistance of claim 3 wherein the second abrupt change is a first abrupt change in which the pressure becomes 10-100 times.
6. The method of measuring superconducting qubit junction resistance according to claim 2 or 3, wherein a moving speed of the other of the first probe and the second probe and the other of the third probe and the fourth probe is 10nm/s to 1 μm/s.
7. The method of measuring superconducting qubit junction resistance of claim 1 wherein the step of electrically breaking down the first oxide layer by the first probe and the second probe comprises:
a potential difference is formed between the first probe and the second probe to cause the first oxide layer to achieve electrical breakdown.
8. The method of measuring superconducting qubit junction resistance of claim 7 further comprising, while forming a potential difference between the first probe and the second probe to cause the first oxide layer to achieve electrical breakdown:
a first protection voltage is applied across the second electrode.
9. The method of measuring superconducting qubit junction resistance of claim 1 wherein the step of electrically breaking down the second oxide layer by the third probe and the fourth probe comprises:
A potential difference is formed between the third probe and the fourth probe to cause the second oxide layer to achieve electrical breakdown.
10. The superconducting qubit junction resistance measurement method of claim 7 further comprising, while forming a potential difference between the third probe and the fourth probe to cause the second oxide layer to achieve electrical breakdown:
a second protection voltage is applied across the first electrode.
11. The superconducting qubit junction resistance measurement method of claim 7 or 9 wherein a potential difference between the first guard voltage and a breakdown voltage applied across the first oxide layer is less than a voltage of breakdown of a josephson junction barrier layer.
12. The superconducting qubit junction resistance measurement method of claim 1 wherein one of the first probe and the second probe is the same probe as one of the third probe and the fourth probe.
13. A superconducting qubit junction resistance measurement system, comprising:
the electrical contact connection system comprises a first probe, a second probe and a third probe, wherein the first probe is used for being matched with the second probe and/or the third probe, the electrical contact connection system is used for enabling the second probe to penetrate into a first oxide layer, the penetration depth is the thickness of the first oxide layer, and the electrical contact connection system is also used for enabling the third probe to penetrate into a second oxide layer, and the penetration depth is the thickness of the second oxide layer; and
A test meter unit connected to the first, second and third probes for applying a voltage to achieve an electrical breakdown, and for applying a test current through the broken down first oxide layer, the josephson junction and the broken down second oxide layer and measuring a voltage between the broken down first oxide layer and the broken down second oxide layer.
14. The superconducting qubit junction resistance measurement system of claim 13 wherein the electrical contact connection system further comprises:
and the displacement adjusting assembly is arranged on the micro force sensor on the displacement adjusting assembly, and each probe is correspondingly arranged on one micro force sensor.
15. The superconducting qubit junction resistance measurement system of claim 14 wherein the electrical connection system further comprises:
the first probe, the second probe and the third probe can move relative to the chip displacement table under the drive of the displacement adjusting assembly.
16. The superconducting qubit junction resistance measurement system of claim 14 wherein the superconducting qubit junction resistance measurement system further comprises: the processing module is used for receiving the pressure detected by the micro force sensor in real time and at least monitoring the pressure value when the pressure is suddenly changed, and the processing module is also used for controlling the movement of the displacement adjusting assembly according to the pressure value when the pressure is suddenly changed.
17. The superconducting qubit junction resistance measurement system of claim 13 wherein the electrical contact connection system further comprises a fourth probe for mating with a third probe, the first probe for mating with the second probe.
CN202210590067.XA 2021-12-13 2022-05-27 Superconducting quantum bit junction resistance measuring method and system Pending CN116263477A (en)

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