CN218412704U - Nondestructive testing probe station for quantum chip - Google Patents

Nondestructive testing probe station for quantum chip Download PDF

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Publication number
CN218412704U
CN218412704U CN202221294529.5U CN202221294529U CN218412704U CN 218412704 U CN218412704 U CN 218412704U CN 202221294529 U CN202221294529 U CN 202221294529U CN 218412704 U CN218412704 U CN 218412704U
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probe
displacement
chip
quantum chip
station
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赵勇杰
金贤胜
张福
刘尧
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Origin Quantum Computing Technology Co Ltd
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Origin Quantum Computing Technology Co Ltd
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/073Multiple probes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)
  • Tests Of Electronic Circuits (AREA)

Abstract

The utility model discloses a quantum chip nondestructive test probe station, which comprises a plurality of probe devices, a supporting structure and a chip displacement station; the support structure comprises a support platform; the chip displacement table is arranged on the supporting platform and used for bearing and driving the quantum chip to be detected to move; the probe device comprises a probe and a probe control mechanism; the probe manipulation mechanism is mounted on the support structure; the probe control mechanism comprises a Z-axis displacement fine adjustment table; the probe is arranged on the Z-axis displacement fine adjustment table, and the Z-axis displacement fine adjustment table pulls the probe to perform fine adjustment along the Z-axis direction and then moves down to the quantum chip to be detected. The utility model discloses an above-mentioned device's cooperation is used, can make the probe accurate with the contact of quantum chip, realize accurate measurement.

Description

Nondestructive testing probe station for quantum chip
Technical Field
The utility model belongs to the quantum information field, especially quantum chip detection area especially relates to a quantum chip nondestructive test probe platform.
Background
The key structure on the superconducting quantum chip is a superconducting qubit, and the key structure of the superconducting qubit is a josephson junction. Josephson junctions are special devices formed by two electrodes separated by a thin layer of insulator. In order to ensure the performance of the superconducting quantum chip, the frequency parameters of the superconducting qubits must be strictly controlled, the representation of the room temperature resistance of the superconducting qubits is important information for reflecting the frequency parameters, and the resistance of the josephson junction is the key for the representation of the room temperature resistance of the superconducting qubits, so that the resistance of the josephson junction needs to be accurately measured.
At present, a resistance measurement scheme specially aiming at a superconducting quantum chip does not exist, and at the present stage, the resistance measurement of the superconducting quantum chip adopts a traditional resistance measurement scheme of a semiconductor chip, namely, a probe is inserted into an internal structure of a device to form a direct contact mode to measure resistance, mainly because an oxide layer is formed on an electrode of a Josephson junction, the oxide layer is not expected to be generated but is difficult to remove, so that the resistance between the electrodes can be accurately obtained by penetrating through the oxide layer, otherwise, the existence of the oxide layer can interfere with a measurement result. However, the probe prick of the josephson junction electrode can cause the loss of superconducting quantum bit performance, but the resistance measurement scheme using the semiconductor chip can cause the probe to prick into the electrode, and even the probe pricks through the electrode seriously, and directly damages the josephson junction. Conventional resistance measurement schemes for semiconductor chips are not suitable for superconducting quantum chips.
Creation contents of utility model
The utility model aims at providing a quantum chip nondestructive test probe station to solve and lack the problem of carrying out the device of precision measurement to superconductive quantum bit junction resistance among the prior art.
To achieve the above and other related objects, the present invention provides the following examples:
1. the utility model provides an example 1: a quantum chip nondestructive detection probe station comprises a plurality of probe devices, a supporting structure and a chip displacement station;
the support structure comprises a support platform;
the chip displacement table is arranged on the supporting platform and used for bearing and driving the quantum chip to be detected to move;
the probe device comprises a probe and a probe control mechanism;
the probe control mechanism is arranged on the supporting structure;
the probe control mechanism comprises a Z-axis displacement fine adjustment table;
the probe is arranged on the Z-axis displacement fine adjustment table, and the Z-axis displacement fine adjustment table pulls the probe to perform fine adjustment along the Z-axis direction and then moves down to the quantum chip to be detected.
2. The utility model provides an example 2: the chip displacement platform comprises an example 1, wherein the chip displacement platform comprises an XYZ three-axis displacement platform and a rotary placing platform;
the XYZ three-axis displacement platform is arranged on the supporting platform;
the rotary placing platform is arranged on the upper surface of the XYZ three-axis displacement platform and used for bearing and driving the quantum chip to be detected to horizontally rotate in a plane parallel to the supporting platform.
3. The utility model provides an example 3: including example 1, wherein the support structure further comprises a support plate and a support column;
the supporting plate is fixedly connected with the supporting platform through the supporting column;
the probe manipulation mechanism is mounted on the support plate.
4. Example 4 provided by the present invention: example 3 is included, in which the support plates are provided in two, and the two support plates are located on both sides of the chip displacement stage.
5. The utility model provides an example 5: example 4 is included, in which the number of the probe devices is four, two of the probe devices are provided on one of the support plates, and the other two of the probe devices are provided on the other support plate.
6. The utility model provides an example 6: example 5 is included, in which a gap for preventing collision is reserved between four of the probes.
7. The utility model provides an example 7: including example 1, wherein the probe comprises a grip, a tip, and a wire;
the clamping part is arranged on the Z-axis displacement fine adjustment table;
the needle head is inserted into the clamping part, one end of the needle head penetrates through the clamping part and extends to the upper part of the quantum chip to be detected, and the other end of the needle head is connected with the lead;
the wire is externally connected with a power module.
8. The utility model provides an example 8: including example 7, wherein, the top of syringe needle is provided with the microscope, an external intelligent terminal of microscope.
9. The utility model provides an example 9: including example 8, wherein the needle forms an angle α with the plane of the XY axes, and the angle α ranges from 70 ° to 85 °, exposing the tip of the needle to the underside of the microscope.
10. Example 10 provided by the present invention: the system comprises an example 1, wherein the probe control mechanism further comprises a Z-axis displacement coarse adjustment table;
and one end of the Z-axis displacement coarse adjustment table is fixed with the Z-axis displacement fine adjustment table, and the Z-axis displacement fine adjustment table is pulled to perform primary adjustment along the Z-axis direction.
11. The utility model provides an example 11: including example 1, wherein the probe manipulation mechanism further comprises an XY stage disposed at the bottom.
12. Example 12 provided by the present invention: including example 7, wherein the probe manipulation mechanism further comprises a micro force sensor;
the micro-force sensor is connected with the clamping part of the probe and used for detecting the needle-inserting force of the probe.
The utility model provides an in the above-mentioned example, quantum chip nondestructive test probe platform can make in the testing process, and the probe can accurately target in place through the cooperation of a plurality of probe devices, bearing structure and chip displacement platform, borrows this and carries out the detection of superconductive quantum bit junction resistance and will have higher detection precision.
Drawings
Fig. 1 is a schematic diagram of an overall structure of a nondestructive testing probe station for quantum chips provided in an embodiment of the present invention;
fig. 2 is a front view of a quantum chip nondestructive testing probe station provided in an embodiment of the present invention;
fig. 3 is a schematic view of an overall structure of a probe device in a nondestructive testing probe station for a quantum chip according to an embodiment of the present invention;
fig. 4 is a schematic structural view of a Z-axis displacement coarse adjustment stage of a probe device in a quantum chip nondestructive testing probe stage provided in an embodiment of the present invention;
fig. 5 is a schematic structural view of a Z-axis displacement fine adjustment stage in a quantum chip nondestructive testing probe stage provided in an embodiment of the present invention;
fig. 6 is a schematic diagram of a frame structure of a nondestructive testing probe station for quantum chips provided in an embodiment of the present invention;
fig. 7 is a schematic view of a partial structure at a probe position in a nondestructive testing probe station for a quantum chip according to an embodiment of the present invention;
fig. 8 is a front view of a probe device in a nondestructive testing probe station for a quantum chip provided in an embodiment of the present invention;
fig. 9 is an enlarged view of a portion a of fig. 8 according to the present invention.
Detailed Description
The following description of the embodiments of the present invention will be described in more detail with reference to the drawings. Advantages and features of the present invention will become apparent from the following description and claims. It should be noted that the drawings are in simplified form and are not to precise scale, and are provided for convenience and clarity in order to facilitate the description of the embodiments of the present invention.
In the description of the present invention, it should be understood that the terms "center", "upper", "lower", "left", "right", and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
Example one
As shown in fig. 1, the present embodiment provides a nondestructive testing probe station based on a superconducting quantum chip, which includes a plurality of probe devices, a supporting structure 6 and a chip displacement station 7.
The supporting structure 6 comprises a supporting platform 61, the chip displacement table 7 is arranged on the supporting platform 61 and used for bearing and driving the superconducting quantum chip to be detected to move, the superconducting quantum chip to be detected is borne by the chip displacement table 7, and the superconducting quantum chip to be detected can be driven to be under the probe device, so that the situation that the superconducting quantum chip to be detected and the probe device cannot be detected due to dislocation is prevented.
The probe device comprises a probe 1 and a probe control mechanism 2, wherein the probe control mechanism 2 is arranged on the supporting structure 6. For example, it may be magnetically fixed to the support platform 61. The probe control mechanism 2 can be implemented by arranging a magnetic attraction platform at the bottom. Other methods, such as mechanical connection, are also possible.
The probe control mechanism 2 comprises a Z-axis displacement fine adjustment table 211A, the probe 1 is arranged on the Z-axis displacement fine adjustment table 211A, the Z-axis displacement fine adjustment table 211A pulls the probe 1 to perform fine adjustment along the Z-axis direction, the probe is inserted to the superconducting quantum chip to be detected, and the Z-axis displacement fine adjustment table 211A is used for driving the probe 1 to perform fine adjustment along the Z-axis direction, so that the situation that the superconducting quantum chip to be detected is scrapped or cannot be detected due to over-deep or over-shallow insertion of the probe 1 can be effectively avoided.
In this embodiment, through the cooperation of the plurality of probe devices, the supporting structure 6 and the chip displacement stage 7, the probe 1 can be accurately positioned in the detection process, and the detection of the superconducting qubit junction resistance can be performed on the basis, and the probe stage has high detection accuracy.
Example two
Referring to fig. 1 and fig. 2, the present embodiment specifically defines a structure of a chip displacement table 7, and the chip displacement table 7 enables the superconducting quantum chip to be detected to be located right below the probe 1 during detection.
The chip displacement stage 7 includes an XYZ three-axis displacement stage 71 and a spin placement stage 72.
The XYZ three-axis displacement platform 71 is arranged on the supporting platform 61, and the rotary placing platform 72 is arranged on the upper surface of the XYZ three-axis displacement platform 71 and is used for bearing and driving the superconducting quantum chip to be detected to horizontally rotate in a plane parallel to the supporting platform 61.
The superconducting quantum chip to be tested can move in four axes along the X axis, the Y axis, the Z axis and the direction parallel to the supporting platform 61, so that the superconducting quantum chip to be tested can be quickly adjusted to a proper position (namely, the superconducting quantum chip to be tested is positioned right below the probe 1) for detection.
A specific support structure 6 is also provided in this embodiment to meet the load bearing requirements of the probe apparatus.
The support structure 6 further comprises a support plate 62 and support posts (not shown).
The supporting plate 62 is fixedly connected with the supporting platform 61 through the supporting column, and the probe control mechanism 2 is installed on the supporting plate 62.
Specifically, the probe manipulation mechanism 2 further includes a Z-axis displacement coarse adjustment stage 212A, a support 22, and an XY displacement stage 213.
One end of the Z-axis coarse adjustment stage 212A is fixed to the Z-axis fine adjustment stage 211A, and the Z-axis fine adjustment stage 211A is pulled to perform a primary adjustment (i.e., a coarse adjustment) along the Z-axis direction.
The Z-axis coarse displacement adjustment stage 212A is slidably mounted on the support 22 along the Z-axis to provide a motion support for the Z-axis coarse displacement adjustment stage 212A, and since the Z-axis fine displacement adjustment stage 211A is connected to the probe 1, the Z-axis coarse displacement adjustment stage 212A can drive the probe 1 to perform coarse adjustment.
The bottom end of the supporting part 22 is fixed with the XY displacement table 213, the XY displacement table 213 drives the supporting part 22 to slide randomly along the X-axis direction and the Y-axis direction, and the supporting part 22, the Z-axis displacement coarse adjustment table 212A, Z axis displacement fine adjustment table 211A and the probe 1 are connected in pairs, so that the purpose of driving the probe 1 to slide along the X-axis direction and the Y-axis direction can be achieved, and the probe 1 can be conveniently adjusted to be above the superconducting quantum chip to be detected.
The XY stage 213 may be a stage of the prior art, such as a stage formed by a micrometer head, a bracket, a locking screw, two perpendicular and staggered cross rails, and the like, and the specific application method is to rotate the micrometer head to make the cross rails dislocate, so as to achieve the purpose of driving. The specific connection relationship and installation method are not described herein.
Further, in order to improve the stability of the XY stage 213 when moving. The bottom of the XY-displacement stage 213 is provided with an adsorption platform 8, and the XY-displacement stage 213 is connected to other supports by using the adsorption platform 8, so that the XY-displacement stage 213 can stably drive the supports 22 to slide along the X-axis and Y-axis directions.
The probe 1 is convenient for operators to observe the needle-inserting force, so that abrasion of the superconducting quantum chip to be detected is prevented. The probe control mechanism 2 comprises a micro force sensor 23, and the micro force sensor 23 is arranged at the tail end of the probe 1 and used for detecting the needle-inserting force of the probe 1.
In the present embodiment, a specific Z-axis displacement coarse adjustment stage 212A is provided to meet the detection requirement. The Z-axis coarse displacement stage 212A includes a micrometer displacement device 2121, one side of the micrometer displacement device 2121 is slidably mounted on the outer wall of the support 22 along the Z-axis, and the other side is fixed to the Z-axis fine displacement stage 211A.
The micrometer shifter 2121 slides to pull the Z-axis fine displacement adjustment table 211A to move (since the probe 1 is arranged on the Z-axis fine displacement adjustment table 211A), so that the purpose of coarsely adjusting the probe 1 is achieved.
The micrometer shifter 2121 and the support 22 can be driven along the Z-axis direction by a motor and a lead screw in the prior art (or manually adjusted, for example, by turning the lead screw by a handle).
In addition, to improve the stability of the connection between the Z-axis displacement fine adjustment stage 211A and the Z-axis displacement coarse adjustment stage 212A. The Z-axis coarse displacement stage 212A further includes an L-shaped interposer 2122.
The L-shaped adapter plate 2122 is fixedly connected with the micrometer shifter 2121; the Z-axis fine adjustment stage 211A is disposed on the upper surface of the L-shaped adapter plate 2122, that is, a supporting force in a direction opposite to the gravity of the Z-axis fine adjustment stage 211A is provided by the bearing acting force of the upper surface of the L-shaped adapter plate 2122.
In addition, as shown in fig. 3 and 4, a limit chamber 9 is formed between the L-shaped adapter plate 2122 and the micrometer shifter 2121, the support 22 is provided with a limit strip 221 matching with the limit chamber 9, and the micrometer shifter 2121 is limited by the limit strip 221 and the limit chamber 9 (i.e. the micrometer shifter 2121 cannot slide along the Y-axis direction), so that the micrometer shifter 2121 can only slide along the Z-axis direction of a predetermined track (i.e. the limit chamber).
In a further embodiment, referring to fig. 3 and 5, a specific Z-axis displacement fine adjustment stage 211A is provided to meet the requirement of fine adjustment of the probe set 1. The Z-axis fine adjustment stage 211A includes a nano-shifter 2111 and a fixed end 2112.
One end of the nanometer shifter 2111 is slidably mounted on the fixed end 2112 along the Z axis, the other end is connected to the probe 1, and the fixed end 2112 is fixedly mounted on the upper surface of the L-shaped adapter plate 2122.
Through relative sliding between the nanometer shifter 2111 and the fixed end 2112 (namely, the position of the fixed end 2112 is unchanged, and the nanometer shifter 2111 moves along the Z-axis direction), the probe 1 is finely adjusted in the Z-axis direction, so that the probe 1 is downwards pricked to a specified position, and further, the situation that the superconducting quantum chip is scrapped or cannot be detected due to too deep or too shallow pricking of the probe 1 is avoided.
Specifically, the nano-shifter 2111 is "T" shaped, the fixed end 2112 is "U" shaped, the nano-shifter 2111 can move in the fixed end 2112, and the relative stroke range of the two is 10 μm to 1mm.
In a further implementation manner, the number of the supporting plates 62 and the number of the probe devices are further limited, so that the superconducting quantum chips to be detected can be better detected.
Specifically, referring to fig. 6 and 7, two support plates 62 may be disposed, and the two support plates 62 are located at two sides of the chip displacement table 7.
The number of the probe devices is four, two of the probe devices are disposed on one of the support plates 62, and the other two of the probe devices are disposed on the other support plate 62.
In this embodiment, an electrical breakdown signal can be applied to two probes 1 located on the same side respectively by the passing method, so that electrodes on two sides of the superconducting quantum chip to be detected are in conductive connection with the probes 1, and then one probe 1 is taken from two sides of the superconducting quantum chip to be detected (for convenient expression, the two selected probes 1 are respectively recorded as a first probe and a second probe), and a junction resistance measuring module is further added between the first probe and the second probe, so that the measurement of the junction resistance of the superconducting quantum bit to be detected can be completed, and the purpose of conveniently detecting the resistance of the superconducting quantum chip to be detected is achieved.
The probe control mechanism 2 drives the probe 1 to displace and needle down to contact with the superconducting quantum chip to be detected on the upper surface of the chip displacement table 7.
In addition, a gap for preventing collision is reserved among the four probes 1, and for example, the gap can be between 0.5 and 1mm, so that the plurality of probe control mechanisms 2 are prevented from being damaged due to collision (i.e., the plurality of supporting members 22 are prevented from colliding when being driven by the XY displacement table 213).
In this embodiment, the probe 1 is further defined in order to facilitate application of an electrical breakdown signal to the probe 1. Specifically, referring to fig. 8 and 9, the probe 1 includes a clamping portion 1A, a needle 1B and a wire 1C.
The holding portion 1A is provided on the Z-axis displacement fine adjustment stage 211A, and further, a probe arm 25 is provided on the Z-axis displacement fine adjustment stage 211A, and for example, the holding portion 1A is held and fixed by the probe arm 25.
Further, the micro force sensor 23 is connected to the clamping portion 1A of the probe via the probe arm 25.
The probe arm 25 may be an integral part of the micro force sensor 23.
The needle head 1B is inserted into the clamping portion 1A, one end of the needle head 1B penetrates through the clamping portion 1A and extends to the upper side of the superconducting quantum chip to be detected, the other end of the needle head is connected with the lead 1C, the lead 1C is externally connected with a power supply module, and the power supply module supplies power to the lead 1C, so that an electrical breakdown signal is applied to the needle head 1B to meet the detection requirement of the superconducting quantum chip to be detected, and the specific detection method is described in detail herein.
In this embodiment, a microscope 5 is further provided to enable the operator to observe the position of the needle 1B in real time, thereby further preventing the needle 1B from penetrating too deeply or too shallowly. The top of syringe needle 1B is provided with microscope 5, an external intelligent terminal (like the computer etc.) of microscope 5 makes things convenient for operating personnel to observe.
In order to enable the microscope 5 to observe the tip of the needle 1B all the time, the situation that the needle 1B penetrates too deeply or too shallowly due to poor observation position is avoided. The probe 1 and a plane where the XY axes are located form an included angle alpha, the included angle alpha ranges from 70 degrees to 85 degrees, specifically, the included angle alpha can be set to 71 degrees, 73 degrees, 75 degrees, 77 degrees, 79 degrees, 81 degrees, 83 degrees and the like, and the tip of the needle head 1B is exposed below the microscope 5.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example" or "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. And the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
The above description is only for the preferred embodiment of the present invention, and does not limit the present invention. Any technical personnel who belongs to the technical field, in the scope that does not deviate from the technical scheme of the utility model, to the technical scheme and the technical content that the utility model discloses expose do the change such as the equivalent replacement of any form or modification, all belong to the content that does not break away from the technical scheme of the utility model, still belong to within the scope of protection of the utility model.

Claims (10)

1. A quantum chip nondestructive detection probe station is characterized by comprising a plurality of probe devices, a supporting structure and a chip displacement station;
the support structure comprises a support platform;
the chip displacement table is arranged on the supporting platform and used for bearing and driving the quantum chip to be detected to move;
the probe device comprises a probe and a probe control mechanism;
the probe manipulation mechanism is mounted on the support structure;
the probe control mechanism comprises a Z-axis displacement fine adjustment table;
the probe is arranged on the Z-axis displacement fine adjustment table, and the Z-axis displacement fine adjustment table pulls the probe to perform fine adjustment along the Z-axis direction and then moves down to the quantum chip to be detected.
2. The quantum chip nondestructive testing probe station of claim 1, wherein the chip displacement station comprises an XYZ tri-axial displacement platform and a rotational placement platform;
the XYZ three-axis displacement platform is arranged on the supporting platform;
the rotary placing platform is arranged on the upper surface of the XYZ three-axis displacement platform and used for bearing and driving the quantum chip to be detected to horizontally rotate in a plane parallel to the supporting platform.
3. The quantum chip nondestructive testing probe station of claim 1, wherein the support structure further comprises a support plate and a support post;
the supporting plate is fixedly connected with the supporting platform through the supporting column;
the probe control mechanism is mounted on the support plate.
4. The nondestructive testing probe station of claim 3, wherein there are two support plates and two support plates are located on either side of the chip displacement station.
5. The quantum chip nondestructive inspection probe station of claim 4, wherein said probe means are four, two of said probe means are disposed on one of said support plates, and the other two of said probe means are disposed on the other of said support plates.
6. The quantum chip nondestructive inspection probe station of claim 5, wherein a gap for preventing collision is reserved between four of the probes.
7. The quantum chip nondestructive testing probe station of claim 1, wherein the probe comprises a clamping portion, a needle, and a wire;
the clamping part is arranged on the Z-axis displacement fine adjustment table;
the needle head is inserted into the clamping part, one end of the needle head penetrates through the clamping part and extends to the upper part of the quantum chip to be detected, and the other end of the needle head is connected with the lead;
the wire is externally connected with a power module.
8. The nondestructive testing probe station for the quantum chip as claimed in claim 7, wherein a microscope is disposed above the needle, and the microscope is externally connected with an intelligent terminal.
9. The nondestructive testing probe station of claim 8, wherein the tip of the needle forms an angle α with a plane containing the XY axes, and the angle α ranges from 70 ° to 85 ° such that the tip of the needle is exposed under the microscope.
10. The quantum chip non-destructive testing probe station of claim 7, wherein said probe manipulation mechanism further comprises a micro force sensor;
the micro-force sensor is connected with the clamping part of the probe and is used for detecting the needle-inserting force of the probe;
the probe control mechanism also comprises a Z-axis displacement coarse adjustment table;
one end of the Z-axis displacement coarse adjustment table is fixed with the Z-axis displacement fine adjustment table, and the Z-axis displacement fine adjustment table is pulled to perform preliminary adjustment along the Z-axis direction;
the probe control mechanism further comprises an XY displacement table arranged at the bottom.
CN202221294529.5U 2021-12-13 2022-05-27 Nondestructive testing probe station for quantum chip Active CN218412704U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023109771A1 (en) * 2021-12-13 2023-06-22 本源量子计算科技(合肥)股份有限公司 Probe apparatus, and superconducting qubit junction resistance measurement method and system
WO2023109772A1 (en) * 2021-12-13 2023-06-22 本源量子计算科技(合肥)股份有限公司 Quantum chip nondestructive testing probe device and probe station

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023109771A1 (en) * 2021-12-13 2023-06-22 本源量子计算科技(合肥)股份有限公司 Probe apparatus, and superconducting qubit junction resistance measurement method and system
WO2023109772A1 (en) * 2021-12-13 2023-06-22 本源量子计算科技(合肥)股份有限公司 Quantum chip nondestructive testing probe device and probe station

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