CN116298525A - Electrical contact connection method and system - Google Patents
Electrical contact connection method and system Download PDFInfo
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- CN116298525A CN116298525A CN202210587177.0A CN202210587177A CN116298525A CN 116298525 A CN116298525 A CN 116298525A CN 202210587177 A CN202210587177 A CN 202210587177A CN 116298525 A CN116298525 A CN 116298525A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/08—Measuring resistance by measuring both voltage and current
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
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Abstract
The invention discloses an electric contact connection method and system. The electrical contact connection method comprises the following steps: contacting the first probe with the first membrane layer; moving the second probe to the first film layer, and monitoring the resistance value between the first probe and the second probe in real time; monitoring the first abrupt change in the resistance value and continuing to move the second probe; and monitoring the second mutation of the resistance value, and stopping the movement of the second probe when the second mutation occurs, wherein the second probe is in contact with the second film layer. According to the electric contact connection method and system provided by the invention, the change condition of the resistance value between the first probe and the second probe is monitored in real time, so that the second probe can accurately descend to the interface of the first film layer and the second film layer, and the second probe and the second film layer can be well electrically connected without damaging the second film layer.
Description
Technical Field
The invention belongs to the field of quantum information, in particular to the field of quantum chip detection, and particularly relates to an electric contact connection method and system.
Background
The key structure on the superconducting quantum chip is a superconducting qubit, and the key structure of the superconducting qubit is a Josephson junction. Josephson junctions are special devices formed by isolating two electrodes with a thin insulator between them. In order to ensure the performance of the superconducting quantum chip, the frequency parameter of the superconducting quantum bit must be strictly controlled, the normal temperature resistance characterization of the superconducting quantum bit is important information of the reaction frequency parameter, and the resistance of the Josephson junction is the key of the normal temperature resistance characterization of the superconducting quantum bit, so that the resistance of the Josephson junction needs to be accurately measured.
At present, a specific resistance measurement scheme for a superconducting quantum chip is not available, and at present, the resistance measurement of the superconducting quantum chip adopts a traditional resistance measurement scheme for a semiconductor chip, namely, a probe is adopted to be inserted into an internal structure of a device to form direct contact to measure the resistance, mainly because an oxide layer is formed on an electrode of a Josephson junction, and the oxide layer is not expected to be generated but is difficult to remove, so that the resistance between the electrodes can be accurately obtained through the oxide layer, otherwise, the existence of the oxide layer can interfere with a measurement result. However, the electrode of the josephson junction is pricked by the probe, which causes the performance loss of superconducting qubits, but the resistance measurement scheme using the semiconductor chip inevitably causes the probe to prick the electrode, and even the probe to prick the electrode seriously, so that the josephson junction is directly damaged. The conventional resistance measurement scheme of the semiconductor chip is not suitable for the superconducting quantum chip.
Summary of the invention
The invention aims to provide an electric contact connection method and system, which are used for solving the problem that a probe is not easy to accurately contact with a target film in the prior art.
To achieve the above and other related objects, the present invention provides the following examples:
1. example 1 provided by the present invention: an electrical contact connection method, comprising:
contacting the first probe with the first membrane layer;
moving the second probe to the first film layer, and monitoring the resistance value between the first probe and the second probe in real time;
monitoring the first abrupt change in the resistance value and continuing to move the second probe;
and monitoring the second mutation of the resistance value, and stopping the movement of the second probe when the second mutation occurs, wherein the second probe is in contact with the second film layer.
2. Example 2 provided by the present invention: including example 1, wherein the second film layer is an electrode of a josephson junction and the first film layer is an oxide layer of a surface of the electrode.
3. Example 3 provided by the present invention: including example 2, wherein the needle-punching position of the first probe is farther from the josephson junction than the needle-punching position of the second probe.
4. Example 4 provided by the present invention: example 1 is included in which the first probe is brought into contact with the first membrane layer by monitoring the pressure to which the first probe is subjected.
5. Example 5 provided by the present invention: example 1 is included, wherein the first abrupt change is a decrease in resistance value from 1mΩ or more to 1kΩ to 10kΩ.
6. Example 6 provided by the present invention: example 1 is included, wherein the second abrupt change is a change in resistance value from 10Ω to 1000Ω.
7. Example 7 provided by the present invention: including example 1, wherein the thickness of the first film layer is between 0.1nm and 5 nm.
8. Example 8 provided by the present invention: an electrical contact connection system, comprising:
the displacement adjusting assembly is arranged on the first probe and the second probe;
the first probe and the second probe are connected with the resistance monitoring module; and
And the first probe and the second probe can respectively and relatively move with the chip displacement table under the driving of the displacement adjusting assembly.
9. Example 9 provided by the present invention: example 8 is included, wherein the resistance monitoring module is to monitor the detected resistance value in real time and to control movement of the displacement adjustment assembly when an abrupt change in the resistance value occurs.
10. Example 10 provided by the present invention: including example 8, wherein further comprising a micro force sensor disposed on the displacement adjustment assembly, at least the first probe disposed on a head of the micro force sensor.
11. Example 11 provided by the present invention: including example 8, wherein the first and second probes are tungsten needles or tungsten alloy needles, the first and second probe surfaces may be electroplated with a protective layer, the first probe being thicker than the second probe.
12. Example 12 provided by the present invention: example 11 is included, wherein the first probe has a shank diameter of 10-500 μm and a tip diameter of 0.5-15 μm, and the second probe has a shank diameter of 5-50 μm and a tip diameter of 0.2-1 μm.
In the above example provided by the invention, the change condition of the resistance value between the first probe and the second probe is monitored in real time, so that the second probe can be precisely needled to the interface of the first film layer and the second film layer, and the second probe and the second film layer can be well electrically connected without damaging the second film layer.
In the above example provided by the invention, the second probe can be precisely needled to the interface between the oxide layer of the electrode of the Josephson junction and the electrode, so that the second probe can realize good electrical connection with the electrode of the Josephson junction without damaging the electrode, and the performance of the Josephson junction is prevented from being influenced.
Drawings
FIG. 1 is a schematic diagram of a qubit structure of a superconducting quantum chip;
FIG. 2 is a schematic diagram of another qubit structure of a superconducting quantum chip;
fig. 3 is a schematic structural diagram of a josephson junction;
FIG. 4 is a flow chart of a method for connecting electrical contacts according to an embodiment of the present invention;
FIG. 5 is a second flow chart of the electrical contact connection method according to one embodiment of the present invention;
FIG. 6 is a schematic view of a needle insertion position provided in one embodiment of the present invention;
fig. 7 is a schematic structural view of an electrical contact-connection system provided in an embodiment of the present invention.
Detailed Description
Specific embodiments of the present invention will be described in more detail below with reference to the drawings. Advantages and features of the invention will become more apparent from the following description and claims. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention.
In the description of the present invention, it should be understood that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", etc., are based on the directions or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
Depending on the different physical systems employed to construct the qubit, the qubit comprises superconducting quantum circuits, semiconductor quantum dots, ion traps, diamond vacancies, topological quanta, photons, etc. in physical implementation.
Superconducting quantum computing is the best solid quantum computing implementation method with the fastest development at present. For superconducting quantum chips, the structure of the qubit can adopt a single capacitor to ground, namely a superconducting quantum interference device with one end grounded and the other end connected with the capacitor, and the capacitor is usually a cross-shaped parallel plate capacitor, as shown in fig. 1, and the capacitor plate C q Surrounded by ground plane (GND), and capacitive plate C q A gap is arranged between the superconducting quantum interference device Squid and the ground plane (GND), one end of the superconducting quantum interference device Squid is connected to the capacitor plate C q The other end is connected to the ground plane (GND). Besides, the structure of the qubit can also adopt two capacitors to the ground and superconducting quantum interference devices respectively connected with the two capacitors to the ground, as shown in fig. 2, the first capacitor plate C q1 Second capacitor plate C q2 And the superconducting quantum interference device Squid is surrounded by the ground plane (GND), and the first capacitor plate C q1 Second capacitor plate C q2 A gap is arranged between the superconducting quantum interference device and the ground plane (GND), one end of the superconducting quantum interference device Squid is connected to the first capacitance polar plate C q1 The other end is connected to the second capacitance polar plate C q2 。
The key structure on the superconducting quantum chip is a superconducting quantum bit, the key structure of the superconducting quantum bit is a Josephson junction, and the performance quality of the Josephson junction directly influences the performance of the quantum bit. Josephson junction is a special device formed by isolating two electrodes with a thin layer of insulator, as in fig. 3, josephson junction 41 comprises a first electrode 4011 and a second electrode 4012, and an insulator between first electrode 4011 and second electrode 4012, wherein the first electrode 4011 may extend from the josephson junction 41 to one side and the second electrode 4012 may extend from the josephson junction 41 to the opposite side. In order to ensure the performance of the superconducting quantum chip, the frequency parameter of the superconducting quantum bit must be strictly controlled, the normal temperature resistance characterization of the superconducting quantum bit is important information of the reaction frequency parameter, and the resistance of the Josephson junction is the key of the normal temperature resistance characterization of the superconducting quantum bit, so that accurate measurement is required for determining whether the resistance of the Josephson junction is qualified or not, and no specific resistance measurement scheme for the superconducting quantum chip is available at present. The invention is mainly directed to how accurate needle placement is performed when the needle is placed at the portion of the electrode extending from the josephson junction.
Example 1
In order to test the josephson junction, an electrical connection with the electrode of the josephson junction is required, an oxide layer is formed on the surface of the electrode of the josephson junction, and in order to form a good electrical connection with the electrode of the josephson junction, one possible solution is to contact the electrode by piercing the oxide layer with a probe. However, it is an important link how to make good electrical connection of the probe to the electrode of the josephson junction without damaging the josephson junction.
The first embodiment of the invention provides an electric contact connection method, by which a probe can be accurately realized to just reach the interface of two film layers, for example, the interface of an electrode and an oxide layer.
Referring to fig. 4, the present embodiment includes the following:
in an embodiment of the present invention, the electrical contact connection method includes:
s1001, moving the probe to the first film layer, and monitoring the pressure born by the probe in real time;
s1002, monitoring the first abrupt change of the pressure, and continuing to move the probe;
s1003, monitoring the second mutation of the pressure, and stopping the movement of the probe when the second mutation occurs, wherein the probe is in contact with the second membrane layer.
In a specific implementation manner, the second film layer is an electrode of a josephson junction, and the first film layer is an oxide layer on the surface of the electrode.
For example, the electrode may be made of aluminum, niobium, or the like, and other superconducting material layers may be used in the present invention.
The thickness of the first film layer may be between 0.1nm and 5nm, for example 0.3nm, 0.5nm, 0.8nm, 1nm, 1.2nm, 1.5nm, 1.7nm, 2nm, 2.3nm, 2.6nm, 2.9nm, 3nm, 3.1nm, 3.4nm, 3.6nm, 3.8nm, 4nm, 4.3nm, 4.5nm, 4.8nm, etc.
In order to reduce the influence of the external environment, the method can be carried out in a dust-free room with a vibration isolation platform and a sound insulation box.
In S1001, the probe is not initially in contact with other external objects, and thus is not subjected to pressure, and the monitoring result should be 0.
As an example, in S1002, the first mutation is a change in pressure from 0 to 0.1 to 10 μn, denoted as a μn. When the first mutation occurs, it means that the probe and the first membrane layer are changed from a non-contact state to a contact state.
The constraints of the first abrupt pressure change include probe shape, material, film thickness, etc., and in general, the softer the probe material, the duller the tip, the thicker the film and the greater the pressure. It is clearly understood that the hardness of the probe is at least greater than the hardness of the first film layer.
Upon the first mutation, the probe will continue to move, i.e. continue deeper into the first membrane layer, during which time the detected pressure will typically continue to increase.
As the probe goes deeper, it is believed that the probe passes just through the first membrane layer and contacts the second membrane layer when a second mutation in the pressure occurs.
As an example, in S1003, the second mutation is a first mutation in which the pressure becomes 10-100 times.
The multiple of the second abrupt pressure change may be different according to the actual material and the thickness of the oxide layer. For example, for aluminum films, one possible multiple is 10-12; but for niobium one possible multiple is 50-60.
For example, for an aluminum film, the first abrupt change is a change in pressure from 0 to 5 μN, and as the probe is continuously moved, for example, the pressure becomes 6 μN, the probe is considered to remain in the first film, and when the pressure becomes 50 μN (for example, an abrupt change occurs from 6.2 μN), the changed pressure is 10 times that of the first abrupt change, and the probe is considered to just pass through the first film and come into contact with the second film.
In the embodiment of the present invention, the multiple of the second pressure mutation may be obtained after multiple experiments and characterization, where the multiple is suitable for related hardware and the part to be tested.
In S1003, upon detecting a second abrupt change in the pressure, the probe is stopped to avoid continued penetration into the second membrane layer.
Experiments prove that the method of the embodiment of the invention can realize the electric connection of the probe and the electrode, and the probe only pierces through the oxide layer and does not damage the electrode, or the probe only leaves tiny pits on the surface of the electrode, so that the damage is tiny (generally acceptable at the moment) and the performance of the Josephson junction is hardly affected.
In addition, in the embodiment of the invention, the probe moves at a constant speed at a slow speed. On the one hand, the probe speed is not easily high due to the thin oxide layer, and on the other hand, the movement is stopped immediately when the target position is reached.
For example, the probe movement speed is 10nm/s to 1 μm/s.
The electrical contact connection method provided by the embodiment can enable the probe to just pierce through the oxide layer to be in contact with the electrode as much as possible, and reduce the damage to the electrode of the Josephson junction electrode as much as possible.
Example two
In order to test the josephson junction, an electrical connection with the electrode of the josephson junction is required, an oxide layer is formed on the surface of the electrode of the josephson junction, and in order to form a good electrical connection with the electrode of the josephson junction, one possible solution is to contact the electrode by puncturing the oxide layer with a probe. However, it is a very important link how to make good electrical connection of the probe to the electrode of the josephson junction without damaging the josephson junction.
Based on this, in this embodiment, an electrical contact connection method is specifically proposed, and this method can make the probe just pierce the oxide layer to contact with the electrode as much as possible, and reduce the damage to the electrode of the josephson junction electrode as much as possible.
In an embodiment of the present invention, referring to fig. 5, the electrical contact connection method includes:
s1901, contacting a first probe with a first film layer;
s1902, moving the second probe towards the first film layer, and monitoring the resistance value between the first probe and the second probe in real time;
s1903, monitoring the first abrupt change of the resistance value, and continuing to move the second probe;
and S1904, monitoring the second mutation of the resistance value, and stopping the movement of the second probe when the second mutation occurs, wherein the second probe is in contact with the second film layer.
In S1901, the first probe is contacted with the first film layer, which may include contacting the surface of the first film layer, penetrating the first film layer, and penetrating the first film layer.
In a specific implementation, the second film layer is an electrode of the josephson junction electrode, and the first film layer is an oxide layer of the electrode.
For example, the electrode may be made of aluminum, niobium, or the like, and other superconducting material layers may be used in the present invention.
The thickness of the first film layer may be between 0.1nm and 5nm, for example 0.3nm, 0.5nm, 0.8nm, 1nm, 1.2nm, 1.5nm, 1.7nm, 2nm, 2.3nm, 2.6nm, 2.9nm, 3nm, 3.1nm, 3.4nm, 3.6nm, 3.8nm, 4nm, 4.3nm, 4.5nm, 4.8nm, etc.
In order to reduce the influence of the external environment, the method can be carried out in a dust-free room with a vibration isolation platform and a sound insulation box.
In a preferred option, the needle insertion position of the first probe is further away from the josephson junction than the needle insertion position of the second probe, as shown in fig. 6. For example, the needle-punching position of the first probe is 20 to 200 μm from the junction region, whereby the first probe is located away from the junction region with negligible effect on the junction.
In addition, the first probe can be a relatively thick probe, and can be easily penetrated or penetrated through an oxide layer on the surface of the electrode.
In one embodiment, in S1901, the first probe is brought into contact with a first membrane layer by monitoring the pressure to which the first probe is subjected.
For example, the first probe may be brought into contact with the first film layer in the manner described in embodiment one.
In S1902, at the time of the first start-up of the second probe, since it has not been in contact with the first film layer yet, the resistance value between the first probe and the second probe tends to infinity (10 mΩ or more).
As an example, in S1903, the first mutation is a decrease in resistance value to 10kΩ to 10mΩ. When the first mutation occurs, it means that the second probe is changed from the non-contact state to the contact state with the first membrane layer.
The restriction factors for the first mutation include probe material, membrane material, etc.
In the first abrupt change, the second probe will continue to move, i.e. continue to penetrate into the first membrane layer, during which the resistance value will normally continue to drop.
As the second probe goes deeper, it is considered that the second probe just passes through the first film layer and contacts the second film layer when the second mutation occurs in the resistance value.
As an example, in S1904, the second mutation is such that the resistance value becomes 10Ω to 1000Ω, for example, 40 to 150Ω.
In S1904, upon detecting a second abrupt change in the resistance value, the second probe is stopped from moving to avoid continuing to stick into the second film layer.
Experiments prove that the method of the embodiment of the invention can realize the electric connection between the second probe and the electrode, and the second probe only pierces through the oxide layer and does not damage the electrode, or the probe only leaves tiny pits on the surface of the electrode, so that the damage is tiny and the performance of the Josephson junction is hardly affected.
In addition, in the embodiment of the invention, the second probe moves at a constant speed at a slow speed. On the one hand, the probe speed is not easily high due to the thin oxide layer, and on the other hand, the movement is stopped immediately when the target position is reached.
For example, the second probe movement speed is 10nm/s to 1 μm/s.
The electrical contact connection method provided by the embodiment can enable the probe to just pierce through the oxide layer to be in contact with the electrode as much as possible, and reduce the damage to the electrode of the Josephson junction electrode as much as possible.
Example III
In order to test the josephson junction, an electrical connection with the electrode of the josephson junction is required, an oxide layer is formed on the surface of the electrode of the josephson junction, and in order to form a good electrical connection with the electrode of the josephson junction, one possible solution is to contact the electrode by puncturing the oxide layer with a probe. However, it is a very important link how to make good electrical connection of the probe to the electrode of the josephson junction without damaging the josephson junction.
The third embodiment of the invention provides an electrical contact connection system, by which a probe can be accurately realized to just reach the interface of two film layers, for example, the interface of an electrode and an oxide layer. Correspondingly, with the aid of the system, the method of the invention can be realized more precisely.
Referring to fig. 7, the electrical contact connection system includes:
a displacement adjustment assembly 21, a first probe 11 and a second probe 12 provided on the displacement adjustment assembly 21;
a resistance monitoring module 33, wherein the first probe 11 and the second probe 12 are connected with the resistance monitoring module 33; and
the first probe 11 and the second probe 12 can respectively move relative to the chip displacement table 7 under the drive of the displacement adjusting assembly 21.
Further, the resistance monitoring module 33 is configured to monitor the detected resistance value in real time, and control the movement of the displacement adjustment assembly 21 when the resistance value is suddenly changed.
Further, a micro force sensor 23 is also included, in order to make the method of the present invention more accurate in pressure detection, in one embodiment, the first probe 11 is disposed on the probe of the micro force sensor 23, and the first probe 11 and the probe of the micro force sensor 23 may be rigidly connected, so that force is transferred more directly.
Further still include: the processing module 331 receives the pressure detected by the micro force sensor 23 in real time, and records at least a pressure value when the pressure is suddenly changed, and the processing module 331 further controls the movement of the displacement adjusting assembly 21 according to the pressure value when the pressure is suddenly changed.
The processing module 331 is configured to continuously monitor the pressure applied by the first probe 11 during movement, and monitor a first abrupt change in the pressure, and monitor a second abrupt change in the pressure.
For example, when the processing module 331 detects a first abrupt change in the pressure, the displacement adjustment assembly 21 is immediately caused to stop moving the first probe 11, or the displacement adjustment assembly 21 is continuously caused to move the first probe 11, and the first probe 11 can be stopped at any time as needed; when the processing module 331 detects a second abrupt change in the pressure, the displacement adjustment assembly 21 is immediately caused to stop moving the first probe 11.
The processing module 331 may be integrated in the resistance monitoring module 33, i.e. the processing module 331 may control the movement of the displacement adjustment assembly 21 according to the pressure signal, or may control the movement of the displacement adjustment assembly 21 according to the resistance signal.
The first probes 11 and the second probes 12 are tungsten needles or tungsten alloy needles, a protective layer can be electroplated on the surfaces of the first probes 11 and the second probes 12, and the first probes 11 are thicker than the second probes 12.
For example, the first probe 11 has a shank diameter of 10-500 μm and a tip diameter of 0.5-15 μm, and the second probe 12 has a shank diameter of 5-50 μm and a tip diameter of 0.2-1 μm.
The first probe 11 is relatively thick to facilitate easy penetration of the oxide layer of the electrode of the josephson junction. The second probe 12 is thinner to minimize damage to the electrode so that the impact on the structure is negligible.
The chip displacement stage 7 is mainly used for carrying a component to be tested, for example a superconducting quantum chip with a josephson junction.
In the description of the present specification, a description of the terms "one embodiment," "some embodiments," "examples," or "particular examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments. Further, one skilled in the art can engage and combine the different embodiments or examples described in this specification.
The foregoing is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Any person skilled in the art may make any equivalent substitution or modification to the technical solution and technical content disclosed in the invention within the scope of the technical solution without departing from the invention, and the technical solution is not departing from the scope of the invention.
Claims (12)
1. A method of electrical contact connection, comprising:
contacting the first probe with the first membrane layer;
moving the second probe to the first film layer, and monitoring the resistance value between the first probe and the second probe in real time;
monitoring the first abrupt change in the resistance value and continuing to move the second probe;
and monitoring the second mutation of the resistance value, and stopping the movement of the second probe when the second mutation occurs, wherein the second probe is in contact with the second film layer.
2. The electrical contact connection method of claim 1, wherein the second film is an electrode of a josephson junction and the first film is an oxide layer of a surface of the electrode.
3. The electrical contact connection method of claim 2, wherein the needle-punching position of the first probe is further away from the josephson junction than the needle-punching position of the second probe.
4. The electrical contact connection method of claim 1, wherein the first probe is brought into contact with the first membrane layer by monitoring the pressure to which the first probe is subjected.
5. The electrical contact connection method according to claim 1, wherein the first abrupt change is a decrease in resistance value from 1mΩ or more to 1kΩ to 10kΩ.
6. The method of claim 3, wherein the second abrupt change is a change in resistance between 100 Ω and 1000 Ω.
7. The electrical contact connection method of claim 1, wherein the thickness of the first film layer is between 0.1nm and 5 nm.
8. An electrical contact-making system, comprising:
the displacement adjusting assembly is arranged on the first probe and the second probe;
the first probe and the second probe are connected with the resistance monitoring module; and
and the first probe and the second probe can respectively and relatively move with the chip displacement table under the driving of the displacement adjusting assembly.
9. The electrical contact-connection system of claim 8, wherein the resistance-monitoring module is configured to monitor the detected resistance value in real-time and to control movement of the displacement-adjustment assembly when an abrupt change in the resistance value occurs.
10. The electrical contact-connection system of claim 8, further comprising a micro force sensor disposed on the displacement adjustment assembly, at least the first probe disposed on a head of the micro force sensor.
11. The electrical contact-connection system of claim 8, wherein the first and second probes are tungsten or gold needles, the first and second probe surfaces may be plated with a protective layer, the first probe being thicker than the second probe.
12. The electrical contact-connection system of claim 11, wherein the first probe has a shank diameter of 10-500 μιη, a tip diameter of 0.5-15 μιη, and the second probe has a shank diameter of 5-50 μιη, a tip diameter of 0.2-1 μιη.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2022/138437 WO2023109771A1 (en) | 2021-12-13 | 2022-12-12 | Probe apparatus, and superconducting qubit junction resistance measurement method and system |
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| CN2021115192381 | 2021-12-13 | ||
| CN202111519238 | 2021-12-13 | ||
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| CN2022101134544 | 2022-01-29 |
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| CN202210587191.0A Pending CN116263475A (en) | 2021-12-13 | 2022-05-27 | Superconducting quantum bit junction resistance measuring method and measuring system |
| CN202210590067.XA Pending CN116263477A (en) | 2021-12-13 | 2022-05-27 | Superconducting quantum bit junction resistance measuring method and system |
| CN202210587157.3A Pending CN116263474A (en) | 2021-12-13 | 2022-05-27 | Probe device, superconducting qubit junction resistance measurement system and method |
| CN202210587177.0A Pending CN116298525A (en) | 2021-12-13 | 2022-05-27 | Electrical contact connection method and system |
| CN202210587143.1A Pending CN116263473A (en) | 2021-12-13 | 2022-05-27 | Probe device, superconducting qubit junction resistance measuring device, system and method |
| CN202210590023.7A Pending CN116263476A (en) | 2021-12-13 | 2022-05-27 | Electrical contact connection method and system |
| CN202210587141.2A Pending CN116263472A (en) | 2021-12-13 | 2022-05-27 | Probe device, superconducting qubit junction resistance measurement system, circuit and method |
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| CN202210587191.0A Pending CN116263475A (en) | 2021-12-13 | 2022-05-27 | Superconducting quantum bit junction resistance measuring method and measuring system |
| CN202210590067.XA Pending CN116263477A (en) | 2021-12-13 | 2022-05-27 | Superconducting quantum bit junction resistance measuring method and system |
| CN202210587157.3A Pending CN116263474A (en) | 2021-12-13 | 2022-05-27 | Probe device, superconducting qubit junction resistance measurement system and method |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210587143.1A Pending CN116263473A (en) | 2021-12-13 | 2022-05-27 | Probe device, superconducting qubit junction resistance measuring device, system and method |
| CN202210590023.7A Pending CN116263476A (en) | 2021-12-13 | 2022-05-27 | Electrical contact connection method and system |
| CN202210587141.2A Pending CN116263472A (en) | 2021-12-13 | 2022-05-27 | Probe device, superconducting qubit junction resistance measurement system, circuit and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (7) | CN116263475A (en) |
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2022
- 2022-05-27 CN CN202210587191.0A patent/CN116263475A/en active Pending
- 2022-05-27 CN CN202210590067.XA patent/CN116263477A/en active Pending
- 2022-05-27 CN CN202210587157.3A patent/CN116263474A/en active Pending
- 2022-05-27 CN CN202210587177.0A patent/CN116298525A/en active Pending
- 2022-05-27 CN CN202210587143.1A patent/CN116263473A/en active Pending
- 2022-05-27 CN CN202210590023.7A patent/CN116263476A/en active Pending
- 2022-05-27 CN CN202210587141.2A patent/CN116263472A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN116263475A (en) | 2023-06-16 |
| CN116263477A (en) | 2023-06-16 |
| CN116263476A (en) | 2023-06-16 |
| CN116263473A (en) | 2023-06-16 |
| CN116263474A (en) | 2023-06-16 |
| CN116263472A (en) | 2023-06-16 |
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