CN116263472A - Probe device, superconducting qubit junction resistance measurement system, circuit and method - Google Patents
Probe device, superconducting qubit junction resistance measurement system, circuit and method Download PDFInfo
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- CN116263472A CN116263472A CN202210587141.2A CN202210587141A CN116263472A CN 116263472 A CN116263472 A CN 116263472A CN 202210587141 A CN202210587141 A CN 202210587141A CN 116263472 A CN116263472 A CN 116263472A
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- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/08—Measuring resistance by measuring both voltage and current
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
The invention discloses a probe device, a superconducting quantum bit junction resistance measurement system, a circuit and a method. The probe device is used for measuring the superconducting quantum chip and comprises a first probe, a second probe and a probe control mechanism; the probe control mechanism is used for controlling the first probe and the second probe to be downwards needled to the opposite side of the Josephson junction on the superconducting quantum chip, and enabling the first probe and the second probe to just puncture through an oxide layer on the surface of the Josephson junction electrode. The change condition of the pressure signal received by the probe is monitored in real time, so that the probe can accurately descend to the interface between the oxide layer of the Josephson junction electrode and the electrode, the probe can be well electrically connected with the electrode of the Josephson junction without damaging the electrode, and the measurement of the Josephson junction resistance is carried out on the basis, so that the measurement accuracy can be effectively improved.
Description
Technical Field
The invention belongs to the field of quantum information, in particular to the field of quantum chip detection, and particularly relates to a probe device, a superconducting quantum bit junction resistance measurement system, a circuit and a method.
Background
The key structure on the superconducting quantum chip is a superconducting qubit, and the key structure of the superconducting qubit is a Josephson junction. Josephson junctions are special devices formed by isolating two electrodes with a thin insulator between them. In order to ensure the performance of the superconducting quantum chip, the frequency parameter of the superconducting quantum bit must be strictly controlled, the normal temperature resistance characterization of the superconducting quantum bit is important information of the reaction frequency parameter, and the resistance of the Josephson junction is the key of the normal temperature resistance characterization of the superconducting quantum bit, so that the resistance of the Josephson junction needs to be accurately measured.
At present, a resistance measurement scheme specially aiming at a superconducting quantum chip is not available, and at present, the resistance measurement of the superconducting quantum chip adopts a traditional resistance measurement scheme of a semiconductor chip, namely, a probe is adopted to be pricked into an internal structure of a device to form direct contact to measure the resistance, mainly because an oxide layer is formed on an electrode of a Josephson junction, and the oxide layer is not expected to be generated, but is difficult to remove, so that the resistance between the electrodes can be accurately obtained through the oxide layer, otherwise, the existence of the oxide layer can interfere with a measurement result. However, the electrode of the josephson junction is pricked by the probe, which causes the performance loss of superconducting qubits, but the resistance measurement scheme using the semiconductor chip inevitably leads to the probe pricking the electrode, and even the electrode is pricked by the serious probe, so that the josephson junction is directly damaged. The conventional resistance measurement scheme of the semiconductor chip is not suitable for the superconducting quantum chip.
Summary of the invention
The invention aims to provide a probe device, a superconducting qubit junction resistance measurement system, a circuit and a method, so as to solve the problem that a probe can be pricked into an electrode of a Josephson junction in the prior art, avoid the probe from damaging the electrode, avoid the performance loss of the superconducting qubit, and realize the accurate measurement of the Josephson junction resistance.
To achieve the above and other related objects, the present invention provides the following examples:
1. example 1 provided by the present invention: a probe device is used for measuring a superconducting quantum chip and comprises a first probe, a second probe, a probe control mechanism and a chip displacement table;
the probe control mechanism is used for controlling the first probe and the second probe to be needled down to the opposite side of the Josephson junction on the superconducting quantum chip, and enabling the first probe and the second probe to just puncture through an oxide layer on the surface of the Josephson junction electrode;
the chip displacement platform is used for bearing the superconducting quantum chip.
2. Example 2 provided by the present invention: including example 1, wherein the probe manipulation mechanism includes a displacement adjustment assembly, a micro force sensor fixed on the displacement adjustment assembly, the first probe and the second probe are respectively fixed on the corresponding micro force sensor.
3. Example 3 provided by the present invention: including example 2, further comprising: the processing module receives the pressure detected by the micro force sensor in real time and at least monitors the pressure value when the pressure is suddenly changed, and the processing module also controls the movement of the displacement platform according to the pressure value when the pressure is suddenly changed.
4. Example 4 provided by the present invention: a superconducting qubit junction resistance measurement system comprising:
the probe apparatus of any one of examples 1-3, and
and the junction resistance measurement module is respectively connected to the first probe and the second probe.
5. Example 5 provided by the present invention: a superconducting qubit junction resistance measurement circuit, the josephson junction comprising a first electrode and a second electrode, the superconducting qubit junction resistance measurement circuit comprising:
the first probe is electrically connected with the first electrode, a first oxide layer is formed on the surface of the first electrode, and the first probe just penetrates through the first oxide layer to be in electrical contact with the first electrode;
the second probe is electrically connected with the second electrode, a second oxide layer is formed on the surface of the second electrode, and the second probe just penetrates through the second oxide layer to be in electrical contact with the second electrode;
and the junction resistance measurement module is electrically connected with the first probe and the second probe respectively and is used for applying electric signals to the first probe and the second probe so as to measure the resistance of the Josephson junction.
6. Example 6 provided by the present invention: a superconducting qubit junction resistance measurement method comprising:
respectively enabling a first probe and a second probe to be downwards needled to the opposite side of a Josephson junction on a superconducting quantum chip, enabling the first probe to just puncture a first oxide layer on the surface of a first electrode of the Josephson junction, and enabling the second probe to just puncture a second oxide layer on the surface of a second electrode of the Josephson junction;
applying an electrical signal to the first and second probes, and measuring the resistance of the josephson junction.
7. Example 7 provided by the present invention: including example 6, wherein the step of causing the first probe to drop onto the superconducting quantum chip and pierce just the first oxide layer of the josephson junction first electrode surface comprises:
moving the first probe to a first oxide layer on the surface of a first electrode of the Josephson junction, and monitoring the pressure born by the first probe in real time;
monitoring the first abrupt change in pressure and continuing to move the first probe;
monitoring a second abrupt change in the pressure and stopping movement of the first probe when the second abrupt change occurs, wherein the first probe is in contact with the first electrode.
8. Example 8 provided by the present invention: including example 6, wherein the step of causing the second probe to drop onto the superconducting quantum chip and just puncture the second oxide layer of the josephson junction second electrode surface comprises:
moving the second probe to a second oxide layer on the surface of a second electrode of the Josephson junction, and monitoring the pressure born by the second probe in real time;
monitoring the first abrupt change in pressure and continuing to move the second probe;
monitoring a second abrupt change in the pressure and stopping movement of a second probe when the second abrupt change occurs, wherein the second probe is in contact with the second electrode.
9. Example 9 provided by the present invention: examples 7 or 8 are included, wherein the first mutation is a pressure change from 0 to 0.1 to 10 μN.
10. Example 10 provided by the present invention: example 9 is included, wherein the second mutation is a first mutation where the pressure becomes 10-100 times.
11. Example 11 provided by the present invention: examples 7 and 8 are included, wherein the first probe and the second probe are moved at a speed of 10nm/s to 1 μm/s.
12. Example 12 provided by the present invention: including any of examples 5 to 7, wherein the first oxide layer is a native oxide layer.
13. Example 13 provided by the present invention: including any of examples 5 to 6, 8, wherein the second oxide layer is a native oxide layer.
In the above example provided by the invention, the probe device just pierces through the oxide layer on the electrode surface of the josephson junction by manipulating the probe, so that the probe and the electrode of the josephson junction form conductive connection.
In the above examples provided in the present invention, in the superconducting qubit junction resistance measurement system, circuit and method, some probe devices in examples are adopted, so that the two side electrodes of the josephson junction are all provided with probes to form conductive connection with the probes, and the resistance measurement can be realized by respectively connecting the probes on two sides of the josephson junction with the junction resistance measurement module.
In the example provided by the invention, only two probes are needed, the structure is simple, the probes can be accurately needled to the interface between the oxide layers of the two electrodes of the Josephson junction and the electrodes respectively by monitoring the change condition of the pressure signals received by the probes in real time, the probes can be well electrically connected with the electrodes of the Josephson junction without damaging the electrodes, the measurement of the resistance of the Josephson junction is carried out on the basis, the operation process is simple, and the measurement accuracy can be effectively improved.
Drawings
FIG. 1 is a schematic diagram of a qubit structure of a superconducting quantum chip;
FIG. 2 is a schematic diagram of another qubit structure of a superconducting quantum chip;
fig. 3 is a schematic structural diagram of a josephson junction;
FIG. 4 is a flow chart of an electrical contact connection method according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of an electrical contact-connection system provided in one embodiment of the present invention;
FIG. 6 is a schematic diagram of a probe apparatus according to an embodiment of the present invention;
fig. 7 is a schematic diagram of two probes needle insertion on both sides of a josephson junction provided in one embodiment of the invention;
FIG. 8 is a schematic diagram of a superconducting qubit junction resistance measurement system provided in one embodiment of the present invention;
FIG. 9 is a schematic diagram of a superconducting qubit junction resistance measurement circuit provided in one embodiment of the invention;
fig. 10 is a flow chart of a superconducting qubit junction resistance measurement method according to an embodiment of the present invention.
Detailed Description
Specific embodiments of the present invention will be described in more detail below with reference to the drawings. Advantages and features of the invention will become more apparent from the following description and claims. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention.
In the description of the present invention, it should be understood that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", etc., are based on the directions or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
Depending on the different physical systems employed to construct the qubit, the qubit comprises superconducting quantum circuits, semiconductor quantum dots, ion traps, diamond vacancies, topological quanta, photons, etc. in physical implementation.
Superconducting quantum computation is the fastest and best-developed solid quantity at presentThe sub-calculation implementation method. For superconducting quantum chips, the structure of the qubit can adopt a single capacitor to ground, namely a superconducting quantum interference device with one end grounded and the other end connected with the capacitor, and the capacitor is usually a cross-shaped parallel plate capacitor, as shown in fig. 1, and the capacitor plate C q Surrounded by ground plane (GND), and capacitive plate C q A gap is arranged between the superconducting quantum interference device Squid and the ground plane (GND), one end of the superconducting quantum interference device Squid is connected to the capacitor plate C q The other end is connected to the ground plane (GND). Besides, the structure of the qubit can also adopt two capacitors to the ground and superconducting quantum interference devices respectively connected with the two capacitors to the ground, as shown in fig. 2, the first capacitor plate C q1 Second capacitor plate C q2 And the superconducting quantum interference device Squid is surrounded by the ground plane (GND), and the first capacitor plate C q1 Second capacitor plate C q2 A gap is arranged between the superconducting quantum interference device and the ground plane (GND), one end of the superconducting quantum interference device Squid is connected to the first capacitance polar plate C q1 The other end is connected to the second capacitance polar plate C q2 。
The key structure on the superconducting quantum chip is a superconducting quantum bit, the key structure of the superconducting quantum bit is a Josephson junction, and the performance quality of the Josephson junction directly influences the performance of the quantum bit. Josephson junction is a special device formed by isolating two electrodes with a thin layer of insulator, as in fig. 3, josephson junction 41 comprises a first electrode 4011 and a second electrode 4012, and an insulator between first electrode 4011 and second electrode 4012, wherein the first electrode 4011 may extend from the josephson junction 41 to one side and the second electrode 4012 may extend from the josephson junction 41 to the opposite side. In order to ensure the performance of the superconducting quantum chip, the frequency parameter of the superconducting quantum bit must be strictly controlled, the normal temperature resistance characterization of the superconducting quantum bit is important information of the reaction frequency parameter, and the resistance of the Josephson junction is the key of the normal temperature resistance characterization of the superconducting quantum bit, so that the resistance of the Josephson junction needs to be accurately measured to confirm whether the superconducting quantum chip is qualified or not, and no specific resistance measurement scheme for the superconducting quantum chip exists at present. Junction resistance measurements of the josephson junctions performed in the present invention, the main down needle position is the portion of the electrode extending from the josephson junction.
Example 1
In order to test the josephson junction, an electrical connection with the electrode of the josephson junction is required, an oxide layer is formed on the surface of the electrode of the josephson junction, and in order to form a good electrical connection with the electrode of the josephson junction, one possible solution is to contact the electrode by puncturing the oxide layer with a probe. However, it is a very important link how to make good electrical connection of the probe to the electrode of the josephson junction without damaging the josephson junction.
The first embodiment of the invention provides an electric contact connection method, by which a probe can be accurately realized to just reach the interface of two film layers, for example, the interface of an electrode and an oxide layer.
Referring to fig. 4, the present embodiment includes the following:
in an embodiment of the present invention, the electrical contact connection method includes:
s1001, moving the probe to the first film layer, and monitoring the pressure born by the probe in real time;
s1002, monitoring the first abrupt change of the pressure, and continuing to move the probe;
s1003, monitoring the second mutation of the pressure, and stopping the movement of the probe when the second mutation occurs, wherein the probe is in contact with the second membrane layer.
In a specific implementation manner, the second film layer is an electrode of a josephson junction, and the first film layer is an oxide layer on the surface of the electrode.
For example, the electrode may be made of aluminum, niobium, or the like, and other superconducting material layers may be used in the present invention.
The thickness of the first film layer may be between 0.1nm and 5nm, for example 0.3nm, 0.5nm, 0.8nm, 1nm, 1.2nm, 1.5nm, 1.7nm, 2nm, 2.3nm, 2.6nm, 2.9nm, 3nm, 3.1nm, 3.4nm, 3.6nm, 3.8nm, 4nm, 4.3nm, 4.5nm, 4.8nm, etc.
In order to reduce the influence of the external environment, the method can be carried out in a dust-free room with a vibration isolation platform and a sound insulation box.
In S1001, the probe is not initially in contact with other external objects, and thus is not subjected to pressure, and the monitoring result should be 0.
As an example, in S1002, the first mutation is a change in pressure from 0 to 0.1 to 10 μn, denoted as a μn. When the first mutation occurs, it means that the probe and the first membrane layer are changed from a non-contact state to a contact state.
The constraints of the first abrupt pressure change include probe shape, material, film thickness, etc., and in general, the softer the probe material, the duller the tip, the thicker the film and the greater the pressure. It is clearly understood that the hardness of the probe is at least greater than the hardness of the first film layer.
Upon the first mutation, the probe will continue to move, i.e. continue deeper into the first membrane layer, during which time the detected pressure will typically continue to increase.
As the probe goes deeper, it is believed that the probe passes just through the first membrane layer and contacts the second membrane layer when a second mutation in the pressure occurs.
As an example, in S1003, the second mutation is a first mutation in which the pressure becomes 10-100 times.
The multiple of the second abrupt pressure change may be different according to the actual material and the thickness of the oxide layer. For example, for aluminum films, one possible multiple is 10-12; but for niobium one possible multiple is 50-60.
For example, for an aluminum film, the first abrupt change is a change in pressure from 0 to 5 μN, and as the probe is continuously moved, for example, the pressure becomes 6 μN, the probe is considered to remain in the first film, and when the pressure becomes 50 μN (for example, an abrupt change occurs from 6.2 μN), the changed pressure is 10 times that of the first abrupt change, and the probe is considered to just pass through the first film and come into contact with the second film.
In the embodiment of the present invention, the multiple of the second pressure mutation may be obtained after multiple experiments and characterization, where the multiple is suitable for related hardware and the part to be tested.
In S1003, upon detecting a second abrupt change in the pressure, the probe is stopped to avoid continued penetration into the second membrane layer.
Experiments prove that the method of the embodiment of the invention can realize the electric connection of the probe and the electrode, and the probe only pierces through the oxide layer and does not damage the electrode, or the probe only leaves tiny pits on the surface of the electrode, so that the damage is tiny (generally acceptable at the moment) and the performance of the Josephson junction is hardly affected.
In addition, in the embodiment of the invention, the probe moves at a constant speed at a slow speed. On the one hand, the probe speed is not easily high due to the thin oxide layer, and on the other hand, the movement is stopped immediately when the target position is reached.
For example, the probe movement speed is 10nm/s to 1 μm/s.
The electrical contact connection method provided by the embodiment can enable the probe to just pierce through the oxide layer to be in contact with the electrode as much as possible, and reduce the damage to the electrode of the Josephson junction electrode as much as possible.
Example two
In order to test the josephson junction, an electrical connection with the electrode of the josephson junction is required, an oxide layer is formed on the surface of the electrode of the josephson junction, and in order to form a good electrical connection with the electrode of the josephson junction, one possible solution is to contact the electrode by puncturing the oxide layer with a probe. However, it is a very important link how to make good electrical connection of the probe to the electrode of the josephson junction without damaging the josephson junction.
The second embodiment of the invention provides an electrical contact connection system, by which a probe can be accurately realized to just reach the interface of two film layers, for example, the interface of an electrode and an oxide layer. Accordingly, the invention can more conveniently realize the electric contact connection method in the invention by means of the system.
Referring to fig. 5, the electrical contact connection system includes:
a displacement adjustment assembly 21, a micro force sensor 23 provided on the displacement adjustment assembly 21, and a probe 1 provided on the micro force sensor 23;
a chip displacement table 7, and the probe 1 can relatively move with the chip displacement table 7 under the drive of the displacement adjusting component 21.
Further, the method further comprises the following steps: the processing module 331 receives the pressure detected by the micro force sensor 23 in real time, at least monitors the pressure value when the pressure is suddenly changed, and the processing module 331 controls the movement of the displacement adjusting assembly 21 according to the pressure value when the pressure is suddenly changed.
The processing module 331 is configured to continuously monitor the pressure to which the probe 1 is subjected during movement, and monitor a first abrupt change in the pressure, and monitor a second abrupt change in the pressure.
Wherein when the processing module 331 detects a first abrupt change in the pressure, continuing to cause the displacement adjustment assembly 21 to move the probe 1; when the processing module 331 detects a second abrupt change in the pressure, the displacement adjustment assembly 21 is immediately caused to stop moving the probe 1.
In order to make the method of the invention more accurate in pressure detection, in one embodiment, the probe 1 is placed on the head of the micro-sensor 23, and the probe 1 and the head of the micro-sensor 23 may be rigidly connected, thereby making the force transfer more direct.
The probe 1 is a tungsten needle or a tungsten alloy needle, a protective layer can be electroplated on the surface of the probe 1, and the diameter of the tip of the probe 1 is 0.1-50 mu m.
The chip displacement stage 7 is mainly used for carrying a part to be tested, such as a superconducting quantum chip with a josephson junction to be tested.
Example III
The third embodiment of the invention provides a probe device, which can enable a probe to just pierce an oxide layer to be in contact with an electrode as far as possible, so that the damage to the electrode of the Josephson junction electrode is reduced as far as possible.
Referring to fig. 6, the present embodiment provides a probe apparatus for measuring a superconducting quantum chip, which includes a first probe 11, a second probe 12, a probe manipulation mechanism and a chip displacement table 7;
the probe control mechanism is used for controlling the first probe 11 and the second probe 12 to be needled down to the opposite side of the Josephson junction on the superconducting quantum chip 4, and enabling the first probe 11 and the second probe 12 to just puncture through an oxide layer on the electrode surface of the Josephson junction;
the chip displacement table 7 is used for bearing the superconducting quantum chip 4.
As an example, the probe manipulation mechanism includes a displacement adjustment assembly 21, and micro force sensors 23 fixed on the displacement adjustment assembly 21, the first probe 11 and the second probe 12 are respectively fixed on the corresponding micro force sensors 23, and each micro force sensor 23 is connected with the corresponding probe independently.
The present embodiment may be implemented on the basis of the second embodiment, specifically, a set of displacement adjustment assembly 21, a micro force sensor 23 fixed on the displacement adjustment assembly 21, and a second probe 12 fixed on the example sensor 23 may be added on the basis of the second embodiment.
Thus, referring to fig. 7, the present embodiment can achieve the purpose of inserting needles on both sides of the josephson junction, and inserting needles on both sides to achieve the purpose of just inserting.
Example IV
The fourth embodiment of the invention provides a superconducting quantum bit junction resistance measurement system, which can enable a probe to just puncture an oxide layer to be contacted with an electrode as much as possible, thereby reducing the damage to the electrode of a Josephson junction electrode as much as possible and improving the accuracy of measurement.
Referring to fig. 8, the present embodiment provides a superconducting qubit junction resistance measurement system, including:
probe apparatus
A junction resistance measurement module 32, the junction resistance measurement module 32 being connected to the first probe 11 and the second probe 12, respectively.
The probe device may be a probe device provided in the third embodiment of the present invention, which is not described herein repeatedly, and the corresponding technical effects are also applicable to the present embodiment.
The junction resistance measurement module 32 in the present invention may be a test meter unit, or may be a module that performs only resistance measurement in the test meter unit.
The test meter unit is connected to the first and second probes to apply a voltage to achieve an electrical breakdown, and to apply a test current through the broken down first oxide layer 4021, the josephson junction 41 and the broken down second oxide layer 4022 and to measure the voltage between the broken down first oxide layer 4021 and the broken down second oxide layer 4022.
In one implementation, the test meter unit 34 may include a constant current source assembly that provides the test current and a meter assembly that takes current and voltage measurements.
According to the superconducting qubit junction resistance measurement system based on the embodiment, the probe can be accurate in place as far as possible, so that the measurement result of the Josephson junction resistance is high in accuracy.
Example five
The fifth embodiment of the invention provides a superconducting quantum bit junction resistance measuring circuit which can obtain higher measuring accuracy.
Referring to fig. 9, there is provided a superconducting qubit junction resistance measurement circuit, the josephson junction 41 including a first electrode 4011 and a second electrode 4012, comprising:
a first probe 11 electrically connected to the first electrode 4011, wherein a first oxide layer 4021 is formed on the surface of the first electrode 4011, and the first probe 11 just pierces through the first oxide layer 4021 to be in electrical contact with the first electrode 4011;
a second probe 12 electrically connected to the second electrode 4012, a second oxide layer 4022 is formed on the surface of the second electrode 4012, and the second probe 12 just pierces through the second oxide layer 4022 to be in electrical contact with the second electrode 4012;
a junction resistance measurement module 32 electrically connected to the first and second probes 11, 12 respectively, the junction resistance measurement module 32 being adapted to apply an electrical signal to the first and second probes 11, 12 to measure the resistance of the josephson junction.
In this embodiment, since the first probe 11 and the second probe are just penetrating through the oxide layer to be in electrical contact with the electrode, the detection accuracy can be effectively improved, and the interference of the oxide layer on the junction resistance can be reduced.
Example six
The sixth embodiment of the invention provides a superconducting quantum bit junction resistance measurement method, which can obtain higher measurement accuracy.
Referring to fig. 10, the present embodiment provides a superconducting qubit junction resistance measurement method, including:
s1501, respectively enabling a first probe and a second probe to be downwards needled to the opposite side of a Josephson junction on a superconducting quantum chip, enabling the first probe to just puncture a first oxide layer on the surface of a first electrode of the Josephson junction, and enabling the second probe to just puncture a second oxide layer on the surface of a second electrode of the Josephson junction;
s1502, applying an electrical signal to the first and second probes, and measuring the resistance of the josephson junction.
Specifically, referring to fig. 8 and 9, in S1501, the step of making the first probe drop onto the superconducting quantum chip and just puncture the first oxide layer on the surface of the first electrode of the josephson junction includes:
s1501A1, moving the first probe 11 towards the first oxide layer 4021 on the surface of the first electrode 4011 of the josephson junction 41, and monitoring the pressure applied by the first probe 11 in real time;
s1501A2, monitoring the first abrupt change of the pressure, and continuing to move the first probe 11;
s1501A3, monitoring the second abrupt change of the pressure, and stopping the movement of the first probe 11 when the second abrupt change occurs, when the first probe 11 contacts the first electrode 4011.
In S1501, the step of bringing the second probe down onto the superconducting quantum chip and just penetrating the second oxide layer of the josephson junction second electrode surface comprises:
S1501B1, moving the second probe 12 towards the second oxide layer 4022 on the surface of the second electrode 4012 of the josephson junction 41, and monitoring the pressure applied by the second probe 12 in real time;
S1501B2, monitoring the first abrupt change in pressure and continuing to move the second probe 12;
S1501B3, monitoring the second abrupt change of the pressure, and stopping the movement of the second probe 12 when the second abrupt change occurs, when the second probe contacts the second electrode 4012.
The operation procedures of S1051A1 to S1051A3 and S1501B1 to S1501B3 are substantially the same, and may be performed as described in the first embodiment.
In the description of the present specification, a description of the terms "one embodiment," "some embodiments," "examples," or "particular examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments. Further, one skilled in the art can engage and combine the different embodiments or examples described in this specification.
The foregoing is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Any person skilled in the art will make any equivalent substitution or modification to the technical solution and technical content disclosed in the invention without departing from the scope of the technical solution of the invention, and the technical solution of the invention is not departing from the scope of the invention.
Claims (11)
1. The probe device is used for measuring a superconducting quantum chip and is characterized by comprising a first probe, a second probe, a probe control mechanism and a chip displacement table;
the probe control mechanism is used for controlling the first probe and the second probe to be needled down to the opposite side of the Josephson junction on the superconducting quantum chip, and enabling the first probe and the second probe to just puncture through an oxide layer on the surface of the Josephson junction electrode;
the chip displacement platform is used for bearing the superconducting quantum chip.
2. The probe apparatus of claim 1, wherein the probe manipulation mechanism comprises a displacement adjustment assembly, a micro force sensor fixed to the displacement adjustment assembly, the first probe and the second probe being respectively fixed to the corresponding micro force sensor.
3. The electrical contact-connection system of claim 2, further comprising: the processing module receives the pressure detected by the micro force sensor in real time and at least monitors the pressure value when the pressure is suddenly changed, and the processing module also controls the movement of the displacement platform according to the pressure value when the pressure is suddenly changed.
4. A superconducting qubit junction resistance measurement system, comprising:
a probe device according to any one of claims 1 to 3, and
and the junction resistance measurement module is respectively connected to the first probe and the second probe.
5. A superconducting qubit junction resistance measurement circuit, the josephson junction comprising a first electrode and a second electrode, the superconducting qubit junction resistance measurement circuit comprising:
the first probe is electrically connected with the first electrode, a first oxide layer is formed on the surface of the first electrode, and the first probe just penetrates through the first oxide layer to be in electrical contact with the first electrode;
the second probe is electrically connected with the second electrode, a second oxide layer is formed on the surface of the second electrode, and the second probe just penetrates through the second oxide layer to be in electrical contact with the second electrode;
and the junction resistance measurement module is electrically connected with the first probe and the second probe respectively and is used for applying electric signals to the first probe and the second probe so as to measure the resistance of the Josephson junction.
6. A method for measuring resistance of a superconducting qubit junction, comprising:
respectively enabling a first probe and a second probe to be downwards needled to the opposite side of a Josephson junction on a superconducting quantum chip, enabling the first probe to just puncture a first oxide layer on the surface of a first electrode of the Josephson junction, and enabling the second probe to just puncture a second oxide layer on the surface of a second electrode of the Josephson junction;
applying an electrical signal to the first and second probes, and measuring the resistance of the josephson junction.
7. The method of claim 6, wherein the step of bringing the first probe down onto the superconducting quantum chip and just penetrating the first oxide layer of the josephson junction first electrode surface comprises:
moving the first probe to a first oxide layer on the surface of a first electrode of the Josephson junction, and monitoring the pressure born by the first probe in real time;
monitoring the first abrupt change in pressure and continuing to move the first probe;
monitoring a second abrupt change in the pressure and stopping movement of the first probe when the second abrupt change occurs, wherein the first probe is in contact with the first electrode.
8. The method of claim 6, wherein the step of bringing the second probe down onto the superconducting quantum chip and just penetrating the second oxide layer of the josephson junction second electrode surface comprises:
moving the second probe to a second oxide layer on the surface of a second electrode of the Josephson junction, and monitoring the pressure born by the second probe in real time;
monitoring the first abrupt change in pressure and continuing to move the second probe;
monitoring a second abrupt change in the pressure and stopping movement of a second probe when the second abrupt change occurs, wherein the second probe is in contact with the second electrode.
9. The method of claim 7 or 8, wherein the first abrupt change is a pressure change from 0 to 0.1 to 10 μn.
10. The method of claim 9, wherein the second abrupt change is a first abrupt change in which the pressure becomes 10-100 times.
11. The method of claim 7 or 8, wherein the first and second probes move at a speed of 10nm/s to 1 μm/s.
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| CN202210587157.3A Pending CN116263474A (en) | 2021-12-13 | 2022-05-27 | Probe device, superconducting qubit junction resistance measurement system and method |
| CN202210587177.0A Pending CN116298525A (en) | 2021-12-13 | 2022-05-27 | Electrical contact connection method and system |
| CN202210587143.1A Pending CN116263473A (en) | 2021-12-13 | 2022-05-27 | Probe device, superconducting qubit junction resistance measuring device, system and method |
| CN202210590023.7A Pending CN116263476A (en) | 2021-12-13 | 2022-05-27 | Electrical contact connection method and system |
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| CN202210587157.3A Pending CN116263474A (en) | 2021-12-13 | 2022-05-27 | Probe device, superconducting qubit junction resistance measurement system and method |
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