CN116246949A - 一种单面磷化铟晶片的制备方法 - Google Patents
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Abstract
本发明属于半导体材料技术领域,公开了一种单面磷化铟晶片的制备方法,包括以下步骤:(1)研磨;(2)一次腐蚀;(3)减薄;(4)二次腐蚀;(5)粗抛;(6)中抛;(7)精抛。该制备方法可有效提高InP晶圆的平整度、消除塌边、提升均匀性和利用率,对于InP晶圆表面4英寸单面的平整度参数为:TTV≤5μm、Warp≤5μm、Bow≤5μm;塌边≤1mm。
Description
技术领域
本发明属于半导体材料技术领域,尤其涉及一种单面磷化铟晶片的制备方法。
背景技术
磷化铟(InP)是第二代半导体材料,为闪锌矿型晶体结构,禁带宽度为1.34eV,其以高电子迁移速率、高禁带宽度、高热导率在光电芯片衬底材料应用中占据优势,并且是光模块半导体激光器和接收器的关键材料。上述器件的制备都需要以平坦、光滑、无损伤的InP晶圆(晶片)作为原料。
InP晶圆的制备从生长单晶锭开始,然后需要一系列步骤将单晶锭变成可接受的晶圆。通常包括切片、研磨、化学机械抛光和湿法化学清洗。因为磷化铟非常软且脆,化学性质较活泼,高平整度的磷化铟晶圆很难获得。通常采用切片后的双面研磨去除切片引起的平整度,获得可接受的平整度,然后再通过化学机械抛光去除研磨后损伤层,产生原子级的表面。这些步骤中,经历晶圆厚度的不断减少,直到表面粗糙度达到纳米级别或者更低。由于只有使用小到亚微米粒度的金刚石浆才能获得非常光滑的表面。为保证获得较小的晶圆表面损伤层,材料在机械加工中去除速率一般很低,机械加工时间加大,还会大大增加晶圆表面深和宽的划痕特征。这些缺陷在又需要在化学机械抛光中去除。化学机械抛光受到加工原理特性的影响,同片晶圆的边缘和中心所运行的轨迹以及实际中接触到化学反应的程度大大不同,导致了晶圆边缘塌边,大大降低晶片的利用率及器件良率。
因此,本发明需要开发一种制备高平整度且塌边小的磷化铟晶片的制备方法。
发明内容
本发明旨在至少解决上述现有技术中存在的技术问题之一。为此,本发明提出一种单面磷化铟晶片的制备方法,可有效提高InP晶圆的平整度、消除塌边、提升均匀性和利用率,对于InP晶圆表面4英寸单面的平整度参数为:TTV(总厚度偏差)≤5μm、Warp(翘曲度)≤5μm、Bow(弯曲度)≤5μm;塌边≤1mm。
本发明提供一种单面磷化铟晶片的制备方法,包括以下步骤:
(1)研磨:采用研磨液对InP晶片进行研磨;
(2)一次腐蚀:对InP晶片进行湿法化学腐蚀;
(3)减薄:采用砂轮磨削将InP晶片进行减薄;
(4)二次腐蚀:对InP晶片再次进行湿法化学腐蚀;
(5)粗抛:采用邵氏硬度范围在在60-90°的抛光垫和氯含量范围在7-10g/L的抛光液对InP晶片进行化学机械抛光;
(6)中抛:采用邵氏硬度范围在20-55°的抛光垫和氯含量范围在7-10g/L的抛光液对InP晶片进行化学机械抛光;
(7)精抛:采用邵氏硬度范围在20-55°的抛光垫和氯含量范围在4-6.5g/L的抛光液对InP晶片进行化学机械抛光。
一次腐蚀在去除黏附在磷化铟晶片表面的研磨磨料的同时,去除加工过程中释放应力;二次腐蚀可进一步去除晶片加工产生的应力。通过减薄步骤可进一步降低磷化铟的损伤层,消除塌边,改善InP晶片的平整度。通过粗抛、中抛和精抛的结合,能够在实现原子级平坦化的同时有效消除塌边。
优选地,步骤(1)中研磨所用研磨液包括以下组分:水、Al2O3、悬浮剂。
更优选地,所述Al2O3的粒径为400-600目。
更优选地,步骤(1)中研磨所用研磨液的流量为500-800mL/min。
优选地,步骤(1)中研磨的压力为3-5psi。
优选地,步骤(2)和步骤(4)中湿法化学腐蚀所用腐蚀剂均包括以下组分:盐酸、双氧水。
优选地,步骤(2)中湿法化学腐蚀的腐蚀时间为50-80s,步骤(4)中湿法化学腐蚀的腐蚀时间为20-40s。
优选地,步骤(5)-(7)中抛光剂均包括以下组分:三聚磷酸钠、硫代硫酸钠、碳酸氢钠,次氯酸钠、去离子水。
优选地,步骤(5)中化学机械抛光的抛光压力为2-4psi,抛光液的流量为700-900mL/min。
优选地,步骤(6)中化学机械抛光的抛光压力为1.5-2.5psi,抛光液的流量为700-900mL/min。
优选地,步骤(7)中化学机械抛光的抛光压力为1.5-2.5psi,抛光液的流量为300-500mL/min。
本发明还提供了一种单面磷化铟晶片,由上述制备方法所制得。
相对于现有技术,本发明的有益效果如下:
本发明通过两次湿法化学腐蚀,并通过粗抛、中抛和精抛的结合,有效提高InP晶圆的平整度、消除塌边、提升了均匀性和利用率,对于InP晶圆表面4英寸单面的平整度可达TTV(总厚度偏差)≤5μm、Warp(翘曲度)≤5μm、Bow(弯曲度)≤5μm;塌边≤1mm。
附图说明
图1为实施例1中单面磷化铟晶片的平整度测试图,其中5副子图分别表示晶片正面的mapping图、晶片的立体图、晶片的外观图、晶片背面的mapping图和平整度相关参数测试结果;其中,TTV为总厚度偏差、Warp为翘曲度、Bow为弯曲度、SFQR为局部平整度、THK为厚度。
图2为实施例2中单面磷化铟晶片的平整度测试图,其中5副子图分别表示晶片正面的mapping图、晶片的立体图、晶片的外观图、晶片背面的mapping图和平整度相关参数测试结果;其中,TTV为总厚度偏差、Warp为翘曲度、Bow为弯曲度、SFQR为局部平整度、THK为厚度。
图3为对比例1中单面磷化铟晶片的平整度测试图,其中5副子图分别表示晶片正面的mapping图、晶片的立体图、晶片的外观图、晶片背面的mapping图和平整度相关参数测试结果;其中,TTV为总厚度偏差、Warp为翘曲度、Bow为弯曲度、SFQR为局部平整度、THK为厚度。
具体实施方式
为了让本领域技术人员更加清楚明白本发明所述技术方案,现列举以下实施例进行说明。需要指出的是,以下实施例仅为本发明的优选实施例,对本发明要求的保护范围不构成限制作用,任何未违背本发明的精神实质和原理下所做出的修改、替代、组合,均包含在本发明的保护范围内。
以下实施例中所用的原料、试剂或装置如无特殊说明,均可从常规商业途径得到,或者可以通过现有已知方法得到。
实施例1
本实施例提供一种单面磷化铟晶片,其制备方法具体包括以下步骤:
(1)研磨:将10L去离子水、1Kg 500目的Al2O3、0.3Kg悬浮剂(GRISH,购自北京国瑞升的pc-6-w)混合,得到研磨液;采用玻璃研磨盘和上述研磨液对线锯切完的4英寸InP晶片进行研磨,研磨压力为4psi,研磨液流量为600mL/min。研磨后采用大量去离子水冲洗,后浸泡酒精,采用烘箱烘干晶片。
(2)一次腐蚀:将500mL盐酸与250mL双氧水混合,得到腐蚀剂;采用上述腐蚀剂对InP晶片进行湿法化学腐蚀,腐蚀时间60s。采用去离子水进行大量水冲洗,再采用甩干机甩干。
(3)减薄:采用酒精进行擦拭,擦拭后的晶片进入到高精度砂轮磨削。砂轮选用树脂砂轮,转速采用5000rad/min,将晶片进行减薄。
(4)二次腐蚀:将500mL盐酸与250mL双氧水混合,得到腐蚀剂;采用上述腐蚀剂对InP晶片进行湿法化学腐蚀,腐蚀时间30s。采用去离子水进行大量水冲洗,再采用甩干机甩干。
(5)粗抛:采用液体蜡,将InP晶片贴在陶瓷盘上。采用含有三聚磷酸钠,硫代硫酸钠,碳酸氢钠,次氯酸钠,去离子水的混合溶液作为抛光液(氯含量控制在7.8g/L,三聚磷酸钠的浓度为200g/40L,硫代硫酸钠的浓度为100g/40L,碳酸氢钠的的浓度为100g/40L),并采用硬度为70°的不织布作为抛光垫进行化学机械抛光的粗抛,抛光压力控制在3psi,抛光液流量800mL/min。
(6)中抛:采用液体蜡,将InP晶片贴在陶瓷盘上。采用含有三聚磷酸钠,硫代硫酸钠,碳酸氢钠,次氯酸钠,去离子水的混合溶液作为抛光液(氯含量控制在7.8g/L,三聚磷酸钠的浓度为200g/40L,硫代硫酸钠的浓度为100g/40L,碳酸氢钠的的浓度为100g/40L),采用硬度为40°的阻尼布作为抛光垫进行化学机械抛光的中抛,抛光压力控制在2psi,抛光液流量800mL/min。
(7)精抛:采用液体蜡,将InP晶片贴在陶瓷盘上。采用含有三聚磷酸钠,硫代硫酸钠,碳酸氢钠,次氯酸钠,去离子水的混合溶液作为抛光液(氯含量控制在3.9g/L,三聚磷酸钠的浓度为200g/40L,硫代硫酸钠的浓度为100g/40L,碳酸氢钠的的浓度为100g/40L),采用硬度为40°的阻尼布作为抛光垫进行化学机械抛光的中抛,抛光压力控制在2psi,抛光液流量400mL/min。
(8)清洗:精抛后晶片采用甩干桶进行甩干,后下盘;下盘后采用有机溶剂进行去蜡;去蜡后进行简单擦洗,甩干,完成单面磷化铟晶片的制作。
上述制备方法中各工序的掉量和加过过程中成品率如下表1所示。
表1各工序加工掉量和对应成品率
工序名称 | 加工掉量 | 成品率 |
研磨 | 双面研磨,掉量40μm | 100% |
一次腐蚀 | 湿法腐蚀,掉量10μm | 100% |
减薄 | 掉量30μm | 100% |
二次腐蚀 | 湿法腐蚀,掉量10μm | 100% |
粗抛 | 单面粗抛,掉量10μm | 99.0% |
中抛 | 单面中抛,掉量8μm | 99.0% |
精抛 | 单面精抛,掉量5μm | 98.0% |
将所制得的单面磷化铟晶片采用TROPEL设备进行平整度和塌边测试,测试结果如图1所示。由图1可知,本实施例所制得的单面磷化铟晶片的平整度参数为:TTV≤5μm、Warp≤5μm、Bow≤5μm;边缘塌陷降低到≤1mm。
实施例2
本实施例提供一种单面磷化铟晶片,其制备方法具体包括以下步骤:
(1)研磨:将12L去离子水、1.5Kg 500目的Al2O3、0.25Kg悬浮剂(GRISH,购自北京国瑞升的pc-6-w)混合,得到研磨液;采用玻璃研磨盘和上述研磨液对线锯切完的4英寸InP晶片进行研磨,研磨压力为4psi,研磨液流量为650mL/min。研磨后采用大量去离子水冲洗,后浸泡酒精,采用烘箱烘干晶片。
(2)一次腐蚀:将500mL盐酸与250mL双氧水混合,得到腐蚀剂;采用上述腐蚀剂对InP晶片进行湿法化学腐蚀,腐蚀时间60s。采用去离子水进行大量水冲洗,再采用甩干机甩干。
(3)减薄:采用酒精进行擦拭,擦拭后的晶片进入到高精度砂轮磨削。砂轮选用树脂砂轮,转速采用5000rad/min,将晶片进行减薄。
(4)二次腐蚀:将500mL盐酸与250mL双氧水混合,得到腐蚀剂;采用上述腐蚀剂对InP晶片进行湿法化学腐蚀,腐蚀时间30s。采用去离子水进行大量水冲洗,再采用甩干机甩干。
(5)粗抛:采用液体蜡,将InP晶片贴在陶瓷盘上。采用含有三聚磷酸钠,硫代硫酸钠,碳酸氢钠,次氯酸钠,去离子水的混合溶液作为抛光液(氯含量控制在8g/L,三聚磷酸钠的浓度为200g/40L,硫代硫酸钠的浓度为100g/40L,碳酸氢钠的的浓度为100g/40L),并采用硬度为80°的不织布作为抛光垫进行化学机械抛光的粗抛,抛光压力控制在3psi,抛光液流量800mL/min。
(6)中抛:采用液体蜡,将InP晶片贴在陶瓷盘上。采用含有三聚磷酸钠,硫代硫酸钠,碳酸氢钠,次氯酸钠,去离子水的混合溶液作为抛光液(氯含量控制在8g/L,三聚磷酸钠的浓度为200g/40L,硫代硫酸钠的浓度为100g/40L,碳酸氢钠的的浓度为100g/40L),采用硬度为45°的阻尼布作为抛光垫进行化学机械抛光的中抛,抛光压力控制在2psi,抛光液流量800mL/min。
(7)精抛:采用液体蜡,将InP晶片贴在陶瓷盘上。采用含有三聚磷酸钠,硫代硫酸钠,碳酸氢钠,次氯酸钠,去离子水的混合溶液作为抛光液(氯含量控制在4.5g/L,三聚磷酸钠的浓度为200g/40L,硫代硫酸钠的浓度为100g/40L,碳酸氢钠的的浓度为100g/40L),采用硬度为45°的阻尼布作为抛光垫进行化学机械抛光的中抛,抛光压力控制在2psi,抛光液流量400mL/min。
(8)清洗:精抛后晶片采用甩干桶进行甩干,后下盘;下盘后采用有机溶剂进行去蜡;去蜡后进行简单擦洗,甩干,完成单面磷化铟晶片的制作。
将所制得的单面磷化铟晶片采用TROPEL设备进行平整度和塌边测试,测试结果如图2所示。由图2可知,本实施例所制得的单面磷化铟晶片的平整度参数为:TTV≤5μm、Warp≤5μm、Bow≤5μm;边缘塌陷降低到≤1mm。
对比例1
本对比例提供一种单面磷化铟晶片,其制备方法与实施例1相比,区别之处仅在于:化学机械抛光只采用精抛处理,且化学机械抛光的总掉量与实施例1保持相同。
将所制得的单面磷化铟晶片采用TROPEL设备进行平整度和塌边测试,测试结果如图3所示。由图3可知,本对比例所制得的单面磷化铟晶片的平整度参数为:TTV>5μm、Warp>5μm、Bow≤5μm;边缘塌陷≤1mm。
以上结果表明,实施例1-2中单面磷化铟晶片的平整度要明显优于对比例1。
上面结合附图对本申请实施例作了详细说明,但是本申请不限于上述实施例,在所属技术领域普通技术人员所具备的知识范围内,还可以在不脱离本申请宗旨的前提下作出各种变化。此外,在不冲突的情况下,本申请的实施例及实施例中的特征可以相互组合。
Claims (10)
1.一种单面磷化铟晶片的制备方法,其特征在于,包括以下步骤:
(1)研磨:采用研磨液对InP晶片进行研磨;
(2)一次腐蚀:对InP晶片进行湿法化学腐蚀;
(3)减薄:采用砂轮磨削将InP晶片进行减薄;
(4)二次腐蚀:对InP晶片再次进行湿法化学腐蚀;
(5)粗抛:采用邵氏硬度范围在60-90°的抛光垫和氯含量范围在7-10g/L的抛光液对InP晶片进行化学机械抛光;
(6)中抛:采用邵氏硬度范围在20-55°的抛光垫和氯含量范围在7-10g/L的抛光液对InP晶片进行化学机械抛光;
(7)精抛:采用邵氏硬度范围在20-55°的抛光垫和氯含量范围在4-6.5g/L的抛光液对InP晶片进行化学机械抛光。
2.根据权利要求1的制备方法,其特征在于,步骤(1)中研磨所用研磨液包括以下组分:水、Al2O3、悬浮剂。
3.根据权利要求2的制备方法,其特征在于,所述Al2O3的粒径为400-600目。
4.根据权利要求2的制备方法,其特征在于,步骤(1)中研磨所用研磨液的流量为500-800mL/min。
5.根据权利要求1的制备方法,其特征在于,步骤(1)中研磨的压力为3-5psi。
6.根据权利要求1的制备方法,其特征在于,步骤(2)和步骤(4)中湿法化学腐蚀所用腐蚀剂均包括以下组分:盐酸、双氧水。
7.根据权利要求1的制备方法,其特征在于,步骤(2)中湿法化学腐蚀的腐蚀时间为50-80s,步骤(4)中湿法化学腐蚀的腐蚀时间为20-40s。
8.根据权利要求1的制备方法,其特征在于,步骤(5)-(7)中抛光剂均包括以下组分:三聚磷酸钠、硫代硫酸钠、碳酸氢钠,次氯酸钠、去离子水。
9.根据权利要求1的制备方法,其特征在于,步骤(5)中化学机械抛光的抛光压力为2-4psi,抛光液的流量为700-900mL/min;步骤(6)中化学机械抛光的抛光压力为1.5-2.5psi,抛光液的流量为700-900mL/min;步骤(7)中化学机械抛光的抛光压力为1.5-2.5psi,抛光液的流量为300-500mL/min。
10.一种单面磷化铟晶片,其特征在于,由权利要求1-9中任一项所述的制备方法所制得。
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