CN116190458A - Schottky contact super barrier rectifier comprising Schottky diode - Google Patents

Schottky contact super barrier rectifier comprising Schottky diode Download PDF

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CN116190458A
CN116190458A CN202310177029.6A CN202310177029A CN116190458A CN 116190458 A CN116190458 A CN 116190458A CN 202310177029 A CN202310177029 A CN 202310177029A CN 116190458 A CN116190458 A CN 116190458A
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heavily doped
conductivity type
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anode
schottky
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陈文锁
张澳航
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Chongqing University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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  • Computer Hardware Design (AREA)
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Abstract

The invention discloses a Schottky contact super barrier rectifier comprising a Schottky diode, which comprises an anode metal layer (1), a heavily doped second conductive type polycrystalline silicon layer (2), a gate oxide layer (3), a heavily doped second conductive type anode region (4), a lightly doped first conductive type drift region (5) and a heavily doped first conductive type substrate layer (6); the invention improves on the basis of Schottky contact super barrier rectifier (SSBR), improves the forward characteristic of the device, and has lower forward threshold voltage compared with the SSBR rectifier.

Description

Schottky contact super barrier rectifier comprising Schottky diode
Technical Field
The invention relates to the technical field of power semiconductor power electronic devices, in particular to a Schottky contact super barrier rectifier comprising a Schottky diode.
Background
Super Barrier Rectifiers (SBR) were first proposed by APD company engineers in the united states in 2007. The SBR takes an upper metal (metal) as an anode, a lower substrate (N+ substrate) is connected with a cathode, and a PN junction diode (PIN) and a MOS transistor are integrated between the anode and the cathode in parallel to form a rectifying device; the forward starting voltage can be flexibly controlled by adjusting the threshold voltage of the MOS gate, and the reverse voltage withstanding and leakage level utilize the reverse bias characteristic of the PN junction. Thus, SBR can simultaneously obtain a low forward conduction voltage drop, a low reverse leakage level, a high temperature stability and a short recovery time of rectifier characteristics due to its use of an operating principle different from conventional PIN and schottky diode (SBD) devices.
The Schottky contact super barrier rectifier (SSBR) is improved on the basis of the Super Barrier Rectifier (SBR), the SSBR has the advantages of a conventional SBR, a rectifying device is formed by integrating a PIN diode and a MOS channel which are connected in parallel through Schottky contact between an anode and a cathode, forward starting voltage can be controlled more flexibly by adjusting threshold voltages of the Schottky contact and the MOS gate, reverse withstand voltage and electric leakage level utilize PN junction reverse bias characteristics, and barrier reduction effect caused by mirror charges in direct Schottky contact is suppressed. The novel SSBR can simultaneously obtain rectifier characteristics of low forward conduction voltage drop, low reverse leakage level, high temperature stability and shorter recovery time due to the fact that the novel SSBR utilizes the working principle different from the conventional PIN, SBD and SBR devices. Due to the adoption of the innovative device structure and working mechanism, compared with the Schottky rectifier diodes such as the conventional SBD, the trench MOS Schottky diode (TMBS) and the like, the Schottky contact super barrier rectifier SSBR has the advantages that the performances such as the withstand voltage range, the forward conduction characteristic, the reverse leakage characteristic and the like are obviously improved, the forward voltage drop at a small current at room temperature is obviously reduced, and the high-temperature leakage is obviously reduced.
However, the forward threshold voltage of schottky contact superbarrier rectifiers remains difficult to meet industry requirements.
Disclosure of Invention
The invention aims to provide a Schottky contact super barrier rectifier comprising a Schottky diode, which comprises an anode metal layer, a heavily doped second-conductivity-type polycrystalline silicon layer, a gate oxide layer, a heavily doped second-conductivity-type anode region, a lightly doped first-conductivity-type drift region and a heavily doped first-conductivity-type substrate layer.
The anode metal layer is positioned on the heavily doped second conductive type polycrystalline silicon layer.
The heavily doped second conductivity type polysilicon layer is located over the gate oxide layer.
The gate oxide layer is located over the heavily doped second conductivity type anode region.
The heavily doped second conductivity type anode region is located over the lightly doped first conductivity type drift region.
The lightly doped first conductivity type drift region is located over the heavily doped first conductivity type substrate layer.
Further, the anode metal layer is partially located on the heavily doped second conductivity type polysilicon layer, partially located on the heavily doped second conductivity type anode region, and partially located on the lightly doped first conductivity type drift region.
Further, the anode metal layer is respectively contacted with the heavily doped second conductive type anode region and the lightly doped first conductive type drift region, and forms a Schottky contact at the contact.
Further, the gate oxide layer is located over the heavily doped second conductivity type anode region and the lightly doped first conductivity type drift region.
Further, a first conductivity type enhancement layer is included. The first conductivity type enhancement layer is located over the lightly doped first conductivity type drift region.
Further, the anode metal layer is partially located over the heavily doped second conductivity type polysilicon layer, partially located over the heavily doped second conductivity type anode region, and partially located over the first conductivity type enhancement layer.
The anode metal layer is respectively contacted with the heavily doped second conductive type anode region and the first conductive type enhancement layer, and forms Schottky contact at the contact position.
Further, the gate oxide layer is also located over the first conductivity type enhancement layer.
Further, the anode metal layer, the heavily doped second conductive type polycrystalline silicon layer and the gate oxide layer form an anode structure of the Schottky contact super barrier rectifier.
The anode structure is located over a heavily doped second conductivity type anode region and a lightly doped first conductivity type drift region.
The anode structure includes a plurality of repeating units.
Further, a cathode structure of the schottky contact super barrier rectifier is also included.
The cathode structure is positioned below the heavily doped first conductive type substrate layer and is in contact with the heavily doped first conductive type substrate layer.
Further, the gate oxide layer is partially over the heavily doped second conductivity type anode region.
When the Schottky contact super barrier rectifier works in a forward conduction state, a current conduction channel is formed at the contact position of the gate oxide layer and the heavily doped second conduction type anode region.
The technical effect of the invention is undoubtedly that the invention is improved on the basis of a Schottky contact super barrier rectifier (SSBR), the forward characteristic of the device is improved, and compared with the SSBR rectifier, the forward threshold voltage of the device is lower.
Drawings
Fig. 1 is a schematic cross-sectional structure of a schottky contact super barrier rectifying device 1 in the prior art;
fig. 2 is a schematic cross-sectional structure of a schottky contact super barrier rectifying device 2 in the prior art;
FIG. 3 is a schematic cross-sectional view of a device according to embodiment 1 of the present invention;
FIG. 4 is a schematic cross-sectional view of a device according to embodiment 2 of the present invention;
FIG. 5 is a graph showing the forward conduction characteristics;
in the figure: the device comprises an anode metal layer 1, a heavily doped second-conductivity-type polycrystalline silicon layer 2, a gate oxide layer 3, a heavily doped second-conductivity-type anode region 4, a lightly doped first-conductivity-type drift region 5, a heavily doped first-conductivity-type substrate layer 6 and a first-conductivity-type enhancement layer 7.
Detailed Description
The present invention is further described below with reference to examples, but it should not be construed that the scope of the above subject matter of the present invention is limited to the following examples. Various substitutions and alterations are made according to the ordinary skill and familiar means of the art without departing from the technical spirit of the invention, and all such substitutions and alterations are intended to be included in the scope of the invention.
Example 1:
referring to fig. 3, a schottky contact super barrier rectifier including a schottky diode includes an anode metal layer 1, a heavily doped second conductivity type polysilicon layer 2, a gate oxide layer 3, a heavily doped second conductivity type anode region 4, a lightly doped first conductivity type drift region 5, and a heavily doped first conductivity type substrate layer 6.
The anode metal layer 1 is located over the heavily doped polysilicon layer 2 of the second conductivity type.
The heavily doped polysilicon layer 2 of the second conductivity type is located over the gate oxide layer 3.
The gate oxide layer 3 is located over the heavily doped anode region 4 of the second conductivity type.
The heavily doped second conductivity type anode region 4 is located above the lightly doped first conductivity type drift region 5.
The lightly doped first conductivity type drift region 5 is located above the heavily doped first conductivity type substrate layer 6.
The anode metal layer 1 is partially located on the heavily doped second conductivity type polysilicon layer 2, partially located on the heavily doped second conductivity type anode region 4, and partially located on the lightly doped first conductivity type drift region 5.
The anode metal layer 1 is in contact with the heavily doped second conductivity type anode region 4 and the lightly doped first conductivity type drift region 5, respectively, and forms a schottky contact at the contact.
The gate oxide layer 3 is located over the heavily doped second conductivity type anode region 4 and the lightly doped first conductivity type drift region 5.
The anode metal layer 1, the heavily doped second conductive type polycrystalline silicon layer 2 and the gate oxide layer 3 form an anode structure of the Schottky contact super barrier rectifier.
The anode structure is located over a heavily doped second conductivity type anode region 4 and a lightly doped first conductivity type drift region 5.
The anode structure includes a plurality of repeating units.
The rectifier also includes a cathode structure of the schottky contact super barrier rectifier.
The cathode structure is located below the heavily doped first conductivity type substrate layer 6 and is in contact with the heavily doped first conductivity type substrate layer 6.
The gate oxide layer 3 is partially located over the heavily doped anode region 4 of the second conductivity type.
When the schottky contact super barrier rectifier works in a forward conduction state, a current conduction channel is formed at the contact position of the gate oxide layer 3 and the heavily doped second conductive type anode region 4.
Example 2:
referring to fig. 4, a schottky contact super barrier rectifier including a schottky diode includes an anode metal layer 1, a heavily doped second conductivity type polysilicon layer 2, a gate oxide layer 3, a heavily doped second conductivity type anode region 4, a lightly doped first conductivity type drift region 5, and a heavily doped first conductivity type substrate layer 6.
The anode metal layer 1 is located over the heavily doped polysilicon layer 2 of the second conductivity type.
The heavily doped polysilicon layer 2 of the second conductivity type is located over the gate oxide layer 3.
The gate oxide layer 3 is located over the heavily doped anode region 4 of the second conductivity type.
The heavily doped second conductivity type anode region 4 is located above the lightly doped first conductivity type drift region 5.
The lightly doped first conductivity type drift region 5 is located above the heavily doped first conductivity type substrate layer 6.
The schottky contact super barrier rectifier further includes a first conductivity type enhancement layer 7. The first conductivity type enhancement layer 7 is located over the lightly doped first conductivity type drift region 5.
The anode metal layer 1 is partly located above the heavily doped second conductivity type polysilicon layer 2, partly located above the heavily doped second conductivity type anode region 4 and partly located above the first conductivity type enhancement layer 7.
The anode metal layer 1 is in contact with the heavily doped second conductivity type anode region 4 and the first conductivity type enhancement layer 7, respectively, and forms a schottky contact at the contact.
The gate oxide layer 3 is also located over the first conductivity type reinforcing layer 7.
The anode metal layer 1, the heavily doped second conductive type polycrystalline silicon layer 2 and the gate oxide layer 3 form an anode structure of the Schottky contact super barrier rectifier.
The anode structure is located over a heavily doped second conductivity type anode region 4 and a lightly doped first conductivity type drift region 5.
The anode structure includes a plurality of repeating units.
The rectifier also includes a cathode structure of the schottky contact super barrier rectifier.
The cathode structure is located below the heavily doped first conductivity type substrate layer 6 and is in contact with the heavily doped first conductivity type substrate layer 6.
The gate oxide layer 3 is partially located over the heavily doped anode region 4 of the second conductivity type.
When the schottky contact super barrier rectifier works in a forward conduction state, a current conduction channel is formed at the contact position of the gate oxide layer 3 and the heavily doped second conductive type anode region 4.
Example 3:
referring to fig. 3, a schottky contact super barrier rectifier including a schottky diode includes an anode metal layer 1, a heavily doped second conductivity type polysilicon layer 2, a gate oxide layer 3, a heavily doped second conductivity type anode region 4, a lightly doped first conductivity type drift region 5, and a heavily doped first conductivity type substrate layer 6.
The lightly doped first conductivity type drift region 5 is located above the heavily doped first conductivity type substrate layer 6;
the heavily doped second conductivity type anode region 4 is located above the lightly doped first conductivity type drift region 5;
the gate oxide layer 3 is positioned above the heavily doped second conductivity type anode region 4 and the lightly doped first conductivity type drift region 5;
the heavily doped second conductive type polysilicon layer 2 is positioned above the gate oxide layer 3;
the anode metal layer 1 is partly located above the heavily doped second conductivity type polysilicon layer 2, partly located above the heavily doped second conductivity type anode region 4 and partly located above the lightly doped first conductivity type drift region 5.
The anode metal layer 1 is respectively contacted with the heavily doped second conductivity type anode region 4 and the lightly doped first conductivity type drift region 5, and forms a Schottky contact at the contact
The anode metal layer 1, the heavily doped second conductive type polycrystalline silicon layer 2 and the gate oxide layer 3 form an anode structure of the rectifier;
the anode structure is located above the heavily doped second conductivity type anode region 4 and the lightly doped first conductivity type drift region 5; the anode structure is composed of a plurality of repeating units
The cathode of the Schottky contact super barrier rectifier comprising the Schottky diode is positioned below the heavily doped first conductive type substrate layer 6 and is in contact with the heavily doped first conductive type substrate layer 6.
The gate oxide layer 3 is partially located in the heavily doped second conductivity type anode region 4, and when the rectifier works in a forward conduction state, a current conduction channel is formed at the contact position of the gate oxide layer 3 and the heavily doped second conductivity type anode region 4.
Example 4:
referring to fig. 4, a schottky contact super barrier rectifier including a schottky diode includes an anode metal layer 1, a heavily doped second conductivity type polysilicon layer 2, a gate oxide layer 3, a heavily doped second conductivity type anode region 4, a lightly doped first conductivity type drift region 5, and a heavily doped first conductivity type substrate layer 6.
The lightly doped first conductivity type drift region 5 is located above the heavily doped first conductivity type substrate layer 6;
the heavily doped second conductivity type anode region 4 is located above the lightly doped first conductivity type drift region 5;
the heavily doped second conductive type polysilicon layer 2 is positioned above the gate oxide layer 3;
a first conductivity type enhancement layer 7 is also included, said first conductivity type enhancement layer 7 being located above the lightly doped first conductivity type drift region 5.
The gate oxide layer 3 is positioned above the heavily doped second conductivity type anode region 4 and the first conductivity type enhancement layer 7;
the anode metal layer 1 is partially positioned on the heavily doped second conductive type polycrystalline silicon layer 2, partially positioned on the heavily doped second conductive type anode region 4 and partially positioned on the first conductive type enhancement layer 7;
the anode metal layer 1 is respectively contacted with the heavily doped second conductivity type anode region 4 and the first conductivity type enhancement layer 7, and forms a Schottky contact at the contact
The anode metal layer 1, the heavily doped second conductive type polycrystalline silicon layer 2 and the gate oxide layer 3 form an anode structure of the rectifier;
the anode structure is located above the heavily doped second conductivity type anode region 4 and the lightly doped first conductivity type enhancement layer 7; the anode structure is composed of a plurality of repeating units
The cathode of the Schottky contact super barrier rectifier comprising the Schottky diode is positioned below the heavily doped first conductive type substrate layer 6 and is in contact with the heavily doped first conductive type substrate layer 6.
The gate oxide layer 3 is partially located in the heavily doped second conductivity type anode region 4, and when the rectifier works in a forward conduction state, a current conduction channel is formed at the contact position of the gate oxide layer 3 and the heavily doped second conductivity type anode region 4.
Example 5:
as shown in fig. 4, a schottky contact super barrier rectifier including a schottky diode includes an anode metal layer 1, a heavily doped second conductivity type polysilicon layer 2, a gate oxide layer 3, a heavily doped second conductivity type anode region 4, a lightly doped first conductivity type drift region 5, a heavily doped first conductivity type substrate layer 6, and a first conductivity type enhancement layer 7.
The main body material of the device is made of Si material; the dopant amount of the first conductivity type reinforcing layer 7 is 3.6x10 12 cm -2 。
Example 6:
as shown in fig. 3, a schottky contact super barrier rectifier including a schottky diode includes an anode metal layer 1, a heavily doped second conductivity type polysilicon layer 2, a gate oxide layer 3, a heavily doped second conductivity type anode region 4, a lightly doped first conductivity type drift region 5, and a heavily doped first conductivity type substrate layer 6.
The main body material of the device is made of Si material; the thickness of the gate oxide layer 3 is 9nm; the doping concentration of the lightly doped first conductivity type drift region 5 is 5×10 15 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The doping concentration of the heavily doped first conductive type substrate layer 6 is 5×10 19 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the Heavily doped second conductivity type anode region 4 dopant dose 3.7x10 13 cm -2 。
Fig. 5 shows a comparison of forward conduction characteristics of the device of example 3 and the prior art schottky contact super barrier rectifier device 1 of fig. 1;
compared with the prior Schottky contact super barrier rectifier device structure shown in fig. 1 and 2, the device structure disclosed by the invention has the advantages that the forward threshold voltage is reduced, and the forward conduction loss is reduced by combining the forward conduction characteristic comparison chart shown in fig. 5.
Example 7:
a schottky contact super barrier rectifier comprising a schottky diode comprises an anode metal layer 1, the heavily doped second conductivity type polysilicon layer 2, a gate oxide layer 3, a heavily doped second conductivity type anode region 4, a lightly doped first conductivity type drift region 5, and a heavily doped first conductivity type substrate layer 6.
The anode metal layer 1 is positioned on the heavily doped second conductive type polycrystalline silicon layer 2;
the heavily doped second conductive type polysilicon layer 2 is positioned above the gate oxide layer 3;
the gate oxide layer 3 is positioned on the heavily doped anode region 4 of the second conductivity type;
the heavily doped second conductivity type anode region 4 is located above the lightly doped first conductivity type drift region 5;
the lightly doped first conductivity type drift region 5 is located above the heavily doped first conductivity type substrate layer 6.
Example 8:
a schottky contact super barrier rectifier comprising a schottky diode is disclosed in embodiment 7, wherein the anode metal layer 1 is partially disposed on the heavily doped second conductivity type polysilicon layer 2, partially disposed on the heavily doped second conductivity type anode region 4, and partially disposed on the lightly doped first conductivity type drift region 5.
Example 9:
a schottky contact super barrier rectifier comprising a schottky diode is disclosed in embodiment 7, wherein the anode metal layer 1 is in contact with the heavily doped second conductivity type anode region 4 and the lightly doped first conductivity type drift region 5, respectively, and forms a schottky contact at the contact.
Example 10:
a schottky contact super barrier rectifier comprising a schottky diode is described in embodiment 7 wherein the gate oxide layer 3 is located over the heavily doped second conductivity type anode region 4 and the lightly doped first conductivity type drift region 5.
Example 11:
a schottky contact super barrier rectifier comprising a schottky diode is disclosed in example 7, which further comprises a first conductivity type enhancement layer 7; the first conductivity type enhancement layer 7 is located over the lightly doped first conductivity type drift region 5.
Example 12:
a schottky contact super barrier rectifier comprising a schottky diode is disclosed in embodiment 11, wherein the anode metal layer 1 is partially disposed over the heavily doped second conductivity type polysilicon layer 2, partially disposed over the heavily doped second conductivity type anode region 4, and partially disposed over the first conductivity type enhancement layer 7;
the anode metal layer 1 is in contact with the heavily doped second conductivity type anode region 4 and the first conductivity type enhancement layer 7, respectively, and forms a schottky contact at the contact.
Example 13:
a schottky contact super barrier rectifier comprising a schottky diode is described in embodiment 11 wherein the gate oxide layer 3 is further located on the first conductivity type enhancement layer 7.
Example 14:
a schottky contact super barrier rectifier including a schottky diode is disclosed in embodiment 7, wherein the anode metal layer 1, the heavily doped polysilicon layer 2 of the second conductivity type and the gate oxide layer 3 form an anode structure of the schottky contact super barrier rectifier;
the anode structure is located over a heavily doped second conductivity type anode region 4 and a lightly doped first conductivity type drift region 5.
The anode structure includes a plurality of repeating units.
Example 15:
a schottky contact super barrier rectifier comprising a schottky diode as described in example 7, further comprising a cathode structure of the schottky contact super barrier rectifier;
the cathode structure is located below the heavily doped first conductivity type substrate layer 6 and is in contact with the heavily doped first conductivity type substrate layer 6.
Example 16:
a schottky contact super barrier rectifier comprising a schottky diode is described in example 7, wherein the gate oxide layer 3 is partially over the heavily doped second conductivity type anode region 4;
when the schottky contact super barrier rectifier works in a forward conduction state, a current conduction channel is formed at the contact position of the gate oxide layer 3 and the heavily doped second conductive type anode region 4.

Claims (10)

1. A schottky contact super barrier rectifier comprising a schottky diode, characterized by: the high-voltage source device comprises an anode metal layer (1), the heavily doped second-conductivity-type polycrystalline silicon layer (2), a gate oxide layer (3), a heavily doped second-conductivity-type anode region (4), a lightly doped first-conductivity-type drift region (5) and a heavily doped first-conductivity-type substrate layer (6).
The anode metal layer (1) is positioned on the heavily doped second conductive type polycrystalline silicon layer (2);
the heavily doped second conductive type polycrystalline silicon layer (2) is positioned on the gate oxide layer (3);
the gate oxide layer (3) is positioned on the heavily doped anode region (4) of the second conductivity type;
the heavily doped second conductivity type anode region (4) is located above the lightly doped first conductivity type drift region (5);
the lightly doped first conductivity type drift region (5) is located above the heavily doped first conductivity type substrate layer (6).
2. A schottky contact super barrier rectifier comprising a schottky diode as defined in claim 1, wherein: the anode metal layer (1) is characterized in that a part of the anode metal layer (1) is positioned on the heavily doped second conductive type polycrystalline silicon layer (2), a part of the anode metal layer is positioned on the heavily doped second conductive type anode region (4), and a part of the anode metal layer is positioned on the lightly doped first conductive type drift region (5).
3. A schottky contact super barrier rectifier comprising a schottky diode as defined in claim 1, wherein: the anode metal layer (1) is respectively contacted with the heavily doped second conductive type anode region (4) and the lightly doped first conductive type drift region (5), and schottky contact is formed at the contact position.
4. A schottky contact super barrier rectifier comprising a schottky diode as defined in claim 1, wherein: the gate oxide layer (3) is located over the heavily doped second conductivity type anode region (4) and the lightly doped first conductivity type drift region (5).
5. A schottky contact super barrier rectifier comprising a schottky diode as defined in claim 1, wherein: further comprising a first conductivity type reinforcing layer (7); the first conductivity type enhancement layer (7) is located over the lightly doped first conductivity type drift region (5).
6. A schottky contact super barrier rectifier comprising a schottky diode as defined in claim 5, wherein: the anode metal layer (1) is partially positioned on the heavily doped second conductive type polycrystalline silicon layer (2), partially positioned on the heavily doped second conductive type anode region (4) and partially positioned on the first conductive type enhancement layer (7);
the anode metal layer (1) is respectively contacted with the heavily doped second conductive type anode region (4) and the first conductive type enhancement layer (7), and forms a Schottky contact at the contact position.
7. A schottky contact super barrier rectifier comprising a schottky diode as defined in claim 5, wherein: the gate oxide layer (3) is also located over the first conductivity type enhancement layer (7).
8. A schottky contact super barrier rectifier comprising a schottky diode as defined in claim 1, wherein: the anode metal layer (1), the heavily doped second conductive type polycrystalline silicon layer (2) and the gate oxide layer (3) form an anode structure of the Schottky contact super barrier rectifier;
the anode structure is located over a heavily doped second conductivity type anode region (4) and a lightly doped first conductivity type drift region (5).
The anode structure includes a plurality of repeating units.
9. A schottky contact super barrier rectifier comprising a schottky diode as defined in claim 1, wherein: the cathode structure also comprises a Schottky contact super barrier rectifier;
the cathode structure is positioned below the heavily doped first conductive type substrate layer (6) and is in contact with the heavily doped first conductive type substrate layer (6).
10. A schottky contact super barrier rectifier comprising a schottky diode as defined in claim 1, wherein: the gate oxide layer (3) is partially positioned on the heavily doped anode region (4) of the second conductivity type;
when the Schottky contact super barrier rectifier works in a forward conduction state, a current conduction channel is formed at the contact position of the gate oxide layer (3) and the heavily doped second conduction type anode region (4).
CN202310177029.6A 2023-02-28 2023-02-28 Schottky contact super barrier rectifier comprising Schottky diode Pending CN116190458A (en)

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Publication number Priority date Publication date Assignee Title
US20090078962A1 (en) * 2007-09-26 2009-03-26 Lakota Technologies, Inc. Adjustable Field Effect Rectifier
CN104183485A (en) * 2013-05-23 2014-12-03 上海宝芯源功率半导体有限公司 Super barrier rectifier structure and manufacturing method thereof
CN104518006A (en) * 2014-07-01 2015-04-15 重庆中科渝芯电子有限公司 Depletion channel super-barrier rectifier and manufacturing method thereof
CN107946371A (en) * 2017-01-24 2018-04-20 重庆中科渝芯电子有限公司 The super barrier rectifier and its manufacture method of a kind of Schottky Barrier Contact
CN114975594A (en) * 2022-05-12 2022-08-30 上海芯哲微电子科技股份有限公司 Insulated gate Schottky barrier diode IGSBD and preparation method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090078962A1 (en) * 2007-09-26 2009-03-26 Lakota Technologies, Inc. Adjustable Field Effect Rectifier
CN104183485A (en) * 2013-05-23 2014-12-03 上海宝芯源功率半导体有限公司 Super barrier rectifier structure and manufacturing method thereof
CN104518006A (en) * 2014-07-01 2015-04-15 重庆中科渝芯电子有限公司 Depletion channel super-barrier rectifier and manufacturing method thereof
CN107946371A (en) * 2017-01-24 2018-04-20 重庆中科渝芯电子有限公司 The super barrier rectifier and its manufacture method of a kind of Schottky Barrier Contact
CN114975594A (en) * 2022-05-12 2022-08-30 上海芯哲微电子科技股份有限公司 Insulated gate Schottky barrier diode IGSBD and preparation method thereof

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