CN116169451A - Three-dimensional packaged miniaturized power divider - Google Patents
Three-dimensional packaged miniaturized power divider Download PDFInfo
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- CN116169451A CN116169451A CN202310345900.9A CN202310345900A CN116169451A CN 116169451 A CN116169451 A CN 116169451A CN 202310345900 A CN202310345900 A CN 202310345900A CN 116169451 A CN116169451 A CN 116169451A
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- 230000007704 transition Effects 0.000 claims abstract description 90
- 239000010410 layer Substances 0.000 claims abstract description 44
- 239000000919 ceramic Substances 0.000 claims abstract description 26
- 239000011229 interlayer Substances 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 238000002955 isolation Methods 0.000 claims description 10
- 238000001465 metallisation Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 description 6
- 230000006872 improvement Effects 0.000 description 3
- 230000008054 signal transmission Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention discloses a three-dimensional packaged miniaturized power divider, which comprises a plurality of ceramic layers, wherein an interlayer metal layer is formed between the ceramic layers, an input strip line is formed between the two ceramic layers, one end of the input strip line is a signal input end of the power divider, the other end of the input strip line extends to two sides of the power divider respectively to form a first transition strip line and a second transition strip line, the other end of the first transition strip line is connected with the lower end of a first coaxial through hole, the other end of the second transition strip line is connected with the lower end of a second coaxial through hole, the upper end of the coaxial through hole extends to the ceramic layer of the uppermost layer and is connected with one end of the first transition microstrip line and one end of the second transition microstrip line respectively, the first transition microstrip line and the second transition microstrip line are connected with an output line respectively, and the first transition microstrip line and the second transition microstrip line are connected through a patch resistor. The power divider has the advantages of simple structure, small volume, low cost and the like.
Description
Technical Field
The invention relates to the technical field of radio frequency packaging, in particular to a three-dimensional packaged miniaturized power divider.
Background
Along with the development and commercialization of microwave wireless technology in recent decades, microwave circuits are continuously pushed toward miniaturization and high integration, and the improvement of processing technology is continuously promoting the optimization of integrated circuit performance. However, when process development encounters bottlenecks, researchers have begun to seek other ways of packaging to increase the integration of the system. The three-dimensional packaging mode gradually replaces a part of plane packaging technology represented by PCB packaging in microwave circuit design due to the use characteristics of high density and small area. Compared with the traditional PCB, the ceramic has better heat conductivity coefficient, which has important significance for heat dissipation of large-scale integrated circuits, and stable working temperature greatly affects the circuits. And the electromagnetic performance of the ceramic in a high-frequency circuit is superior to that of a traditional PCB, and the ceramic has better adaptability in some circuits which need to transmit high-speed high-frequency signals. In the three-dimensional packaging process, HTCC (high temperature co-fired ceramic) has been widely used in microwave circuits due to the advantages of strong mechanical stress, stable shape, high strength, high thermal conductivity, high insulation, strong binding force, corrosion resistance and the like. In a microwave circuit, in order to divide power into two or more paths according to a certain proportion, a power divider is needed, but the power divider in the prior art is generally large in size, high in cost and inconvenient to use.
Disclosure of Invention
The technical problem to be solved by the invention is how to provide a three-dimensional packaged miniaturized power divider with simple structure, small volume and low cost.
In order to solve the technical problems, the invention adopts the following technical scheme: the utility model provides a miniaturized merit of three-dimensional encapsulation divides ware, includes a plurality of layers ceramic layer, be formed with the interlayer metal layer between the ceramic layer, be formed with the input stripline between two of them layers ceramic layer, the one end of input stripline is the signal input part of merit divide ware, the other end of input stripline extends respectively to the both sides of merit divide ware and forms first transition stripline and second transition stripline, the other end of first transition microstrip line is connected with the lower extreme of first class coaxial through-hole, the other end of second transition microstrip line is connected with the lower extreme of second class coaxial through-hole, the upper end of class coaxial through-hole extends to the ceramic layer department of uppermost layer and is connected with one end of first transition microstrip line and one end of second transition microstrip line respectively, the other end of first transition microstrip line is connected with the one end of paster resistance, the other end of second transition microstrip line is connected with the other end of paster resistance, the other end of first output microstrip line extends to the outside of first transition microstrip line is as the coaxial through-line of first class coaxial through-hole, the microstrip line, the other end of second output microstrip line is connected with the microstrip line, microstrip line is the other end of microstrip line, microstrip line is connected with the microstrip line of microstrip line, microstrip line is the other end of the microstrip line of the other end of the microstrip line is the microstrip line of the other end of the microstrip line of the output to the microstrip layer of the microstrip line of the output layer of the microstrip line of the output.
The further technical proposal is that: the inner side ends of the first transition microstrip line and the second transition microstrip line are oppositely arranged, and the inner side ends of the first transition microstrip line and the second transition microstrip line are connected through the chip resistor.
The further technical proposal is that: and the inner side end part of the first transition microstrip line and the inner side end part of the second transition microstrip line are respectively formed with patch resistor pads, and two ends of each patch resistor are respectively welded on the two patch resistor pads.
The further technical proposal is that: the first transition strip line and the second transition strip line are respectively perpendicular to the input strip line, the first transition microstrip line is perpendicular to the first output strip line, the second transition microstrip line is perpendicular to the second output strip line, and the extending direction of the first output strip line is opposite to the extending direction of the second output strip line.
The further technical proposal is that: the outer side end parts of the first transition strip line and the second transition strip line are respectively provided with an upper coaxial bonding pad, the outer side end parts of the first transition microstrip line and the second transition microstrip line are respectively provided with a lower coaxial bonding pad, the lower ends of the two coaxial through holes are respectively connected with the two lower coaxial bonding pads, and the upper ends of the two coaxial through holes are respectively connected with the two upper coaxial bonding pads.
The further technical proposal is that: the interlayer metal layer comprises two annular parts with openings, the two annular parts are connected through a connecting part, and the annular parts are arranged around the similar coaxial bonding pad.
The further technical proposal is that: the power divider further comprises a plurality of vertically arranged isolation metallization through holes which connect the interlayer metal layers together, and the isolation metallization through holes are positioned around the strip line and the coaxial-like through holes.
The beneficial effects of adopting above-mentioned technical scheme to produce lie in: the input strip line in the power divider is divided into two paths after extending into the module, is subjected to matching treatment at the transition part, is transmitted to the similar coaxial through hole for vertical transition, and is added with a matching branch joint and a patch resistor at the tail end of the similar coaxial through hole. The coaxial-like through hole part completes the quarter wavelength matching function of the first-order Wilkinson power divider, and the chip resistor balances the two output ports, plays an isolating role and can absorb the reflected power. Because the strip line and the quasi-coaxial are used for transmitting electromagnetic waves of the TEM mode, the influence of the structure on the field is small, and the discontinuity of signal transmission is effectively avoided.
The power divider design of the strip line is realized, the use cost of the power divider is reduced, the use area of the power divider is reduced based on the three-dimensional packaging mode of the HTCC, and the design of a later large-scale integrated circuit is facilitated. Meanwhile, the microwave three-dimensional circuit has the advantages of simple structure, easy processing, realization of miniaturization, reduction of assembly difficulty, improvement of assembly tolerance and good practical value in microwave three-dimensional circuit design. The connection mode of gold wire bonding is abandoned, and the design and the assembly are simpler; the periphery of the strip line is subjected to electromagnetic shielding through a grounding isolation hole (an isolation metallization through hole), and is well grounded.
Drawings
The invention will be described in further detail with reference to the drawings and the detailed description.
FIG. 1 is a schematic perspective view of a power divider according to an embodiment of the present invention;
FIG. 2 is a perspective view of a power divider according to an embodiment of the present invention
FIG. 3 is a schematic perspective view of a power divider according to an embodiment of the present invention;
FIG. 4 is a schematic top view of a power divider according to an embodiment of the present invention;
FIG. 5 is a diagram showing simulation results of a miniaturized strip-type power divider structure in this embodiment;
wherein: 1. a ceramic layer; 2. an interlayer metal layer; 3. an input strip line; 4. a first transition stripline; 5. a second transition strip line; 6. a first type of coaxial through-hole; 7. a second type of coaxial through hole; 8. a first transition microstrip line; 9. a second transition microstrip line; 10. a chip resistor; 11. a first output microstrip line; 12. a second output microstrip line; 13. a chip resistor bonding pad; 14. a similar coaxial pad; 15. a category of coaxial pads; 16. isolating the metallized via.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present invention is not limited to the specific embodiments disclosed below.
As shown in fig. 1-5, the embodiment of the invention discloses a three-dimensional packaged miniaturized power divider, which is generally applicable to an X-band and a Ku-band. The power divider comprises a plurality of ceramic layers 1, and the number of the ceramic layers can be set according to the performance, the size and the like of the device. An interlayer metal layer 2 is formed between the ceramic layers 1, and the interlayer metal layer 2 mainly plays roles of shielding and grounding. An input strip line 3 is formed between the two ceramic layers 1, one end of the input strip line 3 is a signal input end of a power divider, and a radio frequency signal is input to the power divider through the input strip line 3 and then is processed through a subsequent structure.
The other end of the input strip line 3 extends to two sides (left and right sides of fig. 1) of the power divider to form a first transition strip line 4 and a second transition strip line 5, as can be seen from fig. 3, the width of the input strip line 3 in the application is larger than the width of the first transition strip line 4 and the width of the second transition strip line 5, as can also be seen from fig. 3, the inner end part of the input strip line 3 in the application extends to the middle part of the power divider, and then extends to the left and right sides of the power divider.
As shown in fig. 3, the other end of the first transition strip line 4 is connected to the lower end of the first type coaxial via 6, the other end of the second transition strip line 5 is connected to the lower end of the second type coaxial via 7, and the lower ends of the first type coaxial via 6 and the second type coaxial via 7 extend upward from the plane where the input strip line 3 is located to the upper surface of the power divider. Further, the upper ends of the coaxial-like through holes (the first coaxial through hole 6 and the second coaxial through hole 7) extend to the ceramic layer of the uppermost layer and are respectively connected with one end of the first transition microstrip line 8 and one end of the second transition microstrip line 9 on the upper surface of the ceramic layer of the uppermost layer.
Further, as shown in fig. 3, the outer ends of the first transition strip line 4 and the second transition strip line 5 are respectively formed with an upper coaxial-like pad 14, the outer ends of the first transition microstrip line 8 and the second transition microstrip line 9 are respectively formed with a lower coaxial-like pad 15, the lower ends of two coaxial-like through holes are respectively connected with two lower coaxial-like pads 15, and the upper ends of two coaxial-like through holes are respectively connected with two upper coaxial-like pads 14.
Further, the other end of the first transition microstrip line 8 is connected with one end of the chip resistor 10, the other end of the second transition microstrip line 9 is connected with the other end of the chip resistor 10, and one end of the first output microstrip line 11 is connected with the first transition microstrip line 8. As shown in fig. 1 and fig. 3, the inner end of the first transition microstrip line 8 and the inner end of the second transition microstrip line 9 are respectively formed with chip resistor pads 13, two ends of the chip resistor 10 are respectively welded on the two chip resistor pads 13, and the stability of connection can be effectively improved by arranging the pads at corresponding positions.
The other end of the first output microstrip line 11 extends to the outer side of the power divider to serve as one signal output end of the power divider, one end of the second output microstrip line 12 is connected with the second transition microstrip line 9, and the other end of the second output microstrip line 12 extends to the outer side of the power divider to serve as the other signal output end of the power divider. Further, the first transition strip line 4 and the second transition strip line 5 are perpendicular to the input strip line 3, the first transition microstrip line 8 is perpendicular to the first output strip line 11, the second transition microstrip line 9 is perpendicular to the second output strip line 12, and the extending direction of the first output strip line 11 is opposite to the extending direction of the second output strip line 12 (one output end extends forward, and the other output end extends outward), so that the power divider is convenient to be connected with other components. The coaxial-like through holes, the input strip line 3, the first transition strip line 4 and the second transition strip line 5 are not in contact with the interlayer metal layer 2, so that effective transmission of signals is prevented from being influenced.
As shown in fig. 3, the interlayer metal layer 2 in the present application includes two annular portions having openings, the two annular portions are connected by a connection portion, and the annular portions are disposed around the coaxial-like through hole. The power divider further comprises a plurality of vertical isolation metallization through holes 16, wherein the isolation metallization through holes 16 connect the interlayer metal layers 2 together, and the isolation metallization through holes 16 are positioned around the strip line and the coaxial-like through holes.
The power divider of the present application adds a coaxial-like vertical transition relative to a planar power divider, which is a block of ceramic layers with isolated metallized vias, transition striplines and coaxial-like vias for signal transmission, and with coaxial-like matching pads attached. The isolated metallized vias may, in addition to being structurally configured as an outer conductor of a coaxial-like structure, also serve to secure the transition module. Adopt 0201 specification's chip resistor in the structure, the effect of resistance: two output ports are balanced to play an isolating role; absorbs the reflected power. The top view of the power divider structure is shown in fig. 4, fig. 5 shows the simulation result of S parameters of the miniaturized power divider structure, and as can be seen from fig. 5: the S parameter of the power divider adopting the miniaturized three-dimensional packaging structure meets the basic requirement of the power divider, namely, the miniaturized power divider structure has good radio frequency performance.
In addition, the invention is simultaneously applied to different impedance designs, such as 30 omega transmission structures, and the miniaturized strip-shaped power divider structure can also be applied.
The design of the strip line power divider is realized, the use cost of the power divider is reduced, and the three-dimensional packaging technology reduces the use area of the power divider. Meanwhile, the microwave three-dimensional circuit has the advantages of simple structure, easy processing, realization of miniaturization, reduction of assembly difficulty, improvement of assembly tolerance and good practical value in microwave three-dimensional circuit design.
Claims (9)
1. A three-dimensional packaged miniaturized power divider is characterized in that: the microstrip patch comprises a plurality of ceramic layers (1), wherein an interlayer metal layer (2) is formed between the ceramic layers (1), an input strip line (3) is formed between the two ceramic layers (1), one end of the input strip line (3) is a signal input end of a power divider, the other end of the input strip line (3) extends towards two sides of the power divider respectively to form a first transition strip line (4) and a second transition strip line (5), the other end of the first transition strip line (4) is connected with the lower end of a first coaxial through hole (6), the other end of the second transition strip line (5) is connected with the lower end of a second coaxial through hole (7), the upper end of the coaxial through hole extends to the ceramic layer of the uppermost layer and is respectively connected with one end of a first transition microstrip line (8) and one end of a second transition microstrip line (9), the other end of the first transition line (8) is connected with one end of a patch resistor (10), the other end of the second transition line (9) is connected with the other end of the microstrip (10), the other end of the microstrip patch (8) extends to the other end of the microstrip patch (11), the microstrip patch (11) is connected with the other end of the microstrip patch (11), the other end of the second output microstrip line (12) extends to the outer side of the power divider to serve as another signal output end of the power divider, and the coaxial-like through hole, the input strip line (3), the first transition strip line (4) and the second transition strip line (5) are not in contact with the interlayer metal layer (2).
2. The three-dimensional packaged miniaturized power divider of claim 1, wherein: the inner side ends of the first transition microstrip line (8) and the second transition microstrip line (9) are oppositely arranged, and the inner side ends of the first transition microstrip line and the second transition microstrip line are connected through the chip resistor (10).
3. The three-dimensional packaged miniaturized power divider of claim 2, wherein: the inner side end part of the first transition microstrip line (8) and the inner side end part of the second transition microstrip line (9) are respectively provided with a chip resistor bonding pad (13), and two ends of the chip resistor (10) are respectively welded on the two chip resistor bonding pads (13).
4. The three-dimensional packaged miniaturized power divider of claim 1, wherein: the first transition strip line (4) and the second transition strip line (5) are respectively perpendicular to the input strip line (3), the first transition microstrip line (8) is perpendicular to the first output strip line (11), the second transition microstrip line (9) is perpendicular to the second output strip line (12), and the extending direction of the first output strip line (11) is opposite to the extending direction of the second output strip line (12).
5. The three-dimensional packaged miniaturized power divider of claim 1, wherein: the outer side end parts of the first transition strip line (4) and the second transition strip line (5) are respectively provided with an upper coaxial-like bonding pad (14), the outer side end parts of the first transition microstrip line (8) and the second transition microstrip line (9) are respectively provided with a lower coaxial-like bonding pad (15), the lower ends of the two coaxial-like through holes are respectively connected with the two lower coaxial-like bonding pads (15), and the upper ends of the two coaxial-like through holes are respectively connected with the two upper coaxial-like bonding pads (14).
6. The three-dimensional packaged miniaturized power divider of claim 1, wherein: the interlayer metal layer (2) comprises two annular parts with openings, the two annular parts are connected through a connecting part, and the annular parts are arranged around the coaxial-like through holes.
7. The three-dimensional packaged miniaturized power divider of claim 1, wherein: the power divider further comprises a plurality of vertically arranged isolation metallization through holes (16), the isolation metallization through holes (16) connect the interlayer metal layers (2) together, and the isolation metallization through holes (16) are positioned around the strip line and the coaxial-like through holes.
8. The three-dimensional packaged miniaturized power divider of claim 1, wherein: the power divider is suitable for the X wave band and the Ku wave band.
9. The three-dimensional packaged miniaturized power divider of claim 1, wherein: the ceramic layer uses a ceramic substrate KCH 90.
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| CN202310345900.9A CN116169451B (en) | 2023-04-03 | 2023-04-03 | Three-dimensional packaged miniaturized power divider |
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