CN114899630A - SSMP transition structure and assembly based on HTCC - Google Patents

SSMP transition structure and assembly based on HTCC Download PDF

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Publication number
CN114899630A
CN114899630A CN202210499413.3A CN202210499413A CN114899630A CN 114899630 A CN114899630 A CN 114899630A CN 202210499413 A CN202210499413 A CN 202210499413A CN 114899630 A CN114899630 A CN 114899630A
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layer
ceramic
ssmp
ladder
signal pin
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Inventor
疏世玮
李潇洒
曾欣
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Shijiazhuang Fengci Electronic Technology Co ltd
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Shijiazhuang Fengci Electronic Technology Co ltd
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Priority to CN202210499413.3A priority Critical patent/CN114899630A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/70—Coupling devices
    • H01R12/71—Coupling devices for rigid printing circuits or like structures
    • H01R12/712—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit
    • H01R12/716—Coupling device provided on the PCB
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/648—Protective earth or shield arrangements on coupling devices, e.g. anti-static shielding  
    • H01R13/658—High frequency shielding arrangements, e.g. against EMI [Electro-Magnetic Interference] or EMP [Electro-Magnetic Pulse]
    • H01R13/6581—Shield structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/66—Structural association with built-in electrical component
    • H01R13/665—Structural association with built-in electrical component with built-in electronic circuit
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/115—Via connections; Lands around holes or via connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)

Abstract

The invention discloses an SSMP joint transition structure and an assembly based on HTCC, and relates to the technical field of microwave devices. The transition structure comprises a ceramic substrate, and the Kovar frame is sleeved on the ceramic substrate for welding; the radio frequency signal pin bonding pad changes from wide to narrow in a step shape from the SSMP connector pin to the outside width and is folded and extended to the right center of the chip interface; the grounding pin pad is positioned on the front surface of the first layer of ceramic ladder; the chip mounting area is positioned on the front surface of the third layer of ceramic ladder; the top cover plate is placed on the first layer of ceramic step, and the area of the top cover plate is larger than the area of the defect of the first layer of ceramic step; the vertical grounding hole group vertically penetrates through the ceramic substrate; the bottom layer supporting plate is positioned below the ceramic substrate and welded; the SSMP connector is welded in the through hole of the bottom supporting plate, and the signal pin passes through the through holes on the bottom supporting plate and the ceramic substrate. The invention has small volume and small parasitic inductance, and can improve the transmission performance of radio frequency signals at high frequency.

Description

SSMP transition structure and assembly based on HTCC
Technical Field
The invention relates to the technical field of microwave devices, in particular to an SSMP transition structure and an SSMP transition assembly based on HTCC.
Background
Ceramic packages are widely used in radio frequency structures due to their high mechanical strength and excellent microwave performance. The high temperature co-fired ceramic (HTCC) also has high heat dissipation capacity, good air tightness and relatively mature process, and is commonly used in aerospace, military equipment and various electronic consumer markets. The HTCC structure is mainly used for chip bonding and radio frequency wiring, the input and output problems of radio frequency signals need to be considered in the design, a common solution is to select an interconnection interface on the market to weld the interconnection interface on an HTCC substrate, wherein an SSMP connector is widely applied to high-density high-frequency circuit connection due to small volume capacity and high working bandwidth. A transition structure needs to be designed in the process of welding the SSMP to the HTCC board, and impedance matching is guaranteed so as to achieve a good signal transmission effect. Because the dielectric constant of the medium in the SSMP joint is far from the dielectric constant of the HTCC, the direct insertion for transition matching results in an excessively large occupied area, difficult process realization, and unfavorable for high-density integration of the system; compared with the method that the electric wall is formed only by the vertical metal through hole, the electromagnetic shielding effect is better, the parasitic inductance is smaller, and the transmission of radio frequency signals can be better realized.
Disclosure of Invention
The invention aims to solve the technical problem of how to provide an SSMP transition structure based on HTCC, which is easier to realize high-frequency high-density integration and has smaller parasitic inductance.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: an SSMP transition structure based on HTCC, characterized in that: the ceramic substrate is in a step shape and comprises a first ceramic step, a second ceramic step and a third ceramic step which are sequentially connected from top to bottom, metal layers are formed in the first ceramic step, the second ceramic step and the third ceramic step, and the metal layers are formed on the upper surface of the third ceramic step and used for placing a chip; a bottom supporting plate is fixed on the lower surface of the ceramic substrate, a stepped hole matched with the SSMP connector is formed in the bottom supporting plate, and a through hole penetrating through the second layer of ceramic step and the third layer of ceramic step is formed in the ceramic substrate corresponding to the SSMP connector; the radio frequency signal pin bonding pad is positioned on the front surface of the second layer of ceramic ladder, one end of the radio frequency signal pin bonding pad is arranged close to the through hole, the other end of the radio frequency signal pin bonding pad is arranged close to the metal layer on the upper surface of the third layer of ceramic ladder, and the radio frequency signal pin bonding pad is used for connecting the SSMP connector signal pin and the pin of the chip together; the grounding pin pads are respectively positioned on the front surface of the first layer of ceramic ladder, the front surface of the second layer of ceramic ladder and two sides of the radio-frequency signal pin pad; a plurality of vertical grounding holes are formed in the ceramic substrate and are vertically connected with a metal layer contained in the ceramic substrate, a grounding pin pad and a metal layer on the surface of a third ceramic step; kovar encloses the frame cover on ceramic substrate's first layer ceramic ladder, and the opening on the Kovar encloses the frame and seals through top layer apron, and the top layer apron of metal contacts with the ground connection pad on the first layer ceramic ladder.
The further technical scheme is as follows: the bottom layer supporting plate is welded below the ceramic substrate, and the axle center of the stepped hole in the bottom layer supporting plate is overlapped with the axle centers of the through holes in the second layer ceramic step and the third layer ceramic step.
The further technical scheme is as follows: and a metallization layer is formed on the inner wall of the through hole, and when the SSMP connector signal pin is inserted into the metallized through hole, the SSMP connector signal pin does not contact with the through hole of the metallization layer.
The further technical scheme is as follows: the radio frequency signal pin bonding pad changes from wide to narrow in width from the SSMP connector pin and extends to the right center position of the chip interface.
The further technical scheme is as follows: the vertical grounding hole comprises a first grounding hole which runs through a first layer of ceramic ladder, a second layer of ceramic ladder and a third layer of ceramic ladder, a second grounding hole which runs through the second layer of ceramic ladder and the third layer of ceramic ladder, and a third grounding hole which runs through the third layer of ceramic ladder.
The invention also discloses an assembly, which is characterized in that: include SSMP transition structure, still include chip and SSMP joint, the chip welding on the metal level of third layer ceramic ladder upper surface, the SSMP joint welding is in the shoulder hole of bottom backup pad, and the SSMP connects in the through hole that the signal pin stretched into top ceramic substrate through the through hole of bottom backup pad, the chip passes through the gold wire bonding and is connected with the one end of radio frequency signal pin pad, and the SSMP connects the signal pin and passes through the gold wire bonding with the other end of radio frequency signal pad.
Adopt the produced beneficial effect of above-mentioned technical scheme to lie in: the SSMP joint transition structure based on the HTCC adopts a transition air coaxial structure, occupies a smaller area, is easier to realize high-frequency high-density integration, has better electromagnetic shielding effect and smaller parasitic inductance, better realizes the transmission of radio-frequency signals, is suitable for the HTCC process, and meets the requirement of high-frequency ceramic packaging.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
FIG. 1 is a perspective schematic view of a transition structure according to an embodiment of the present invention;
FIG. 2 is a schematic top view of a transition structure according to an embodiment of the present invention;
FIG. 3 is a schematic perspective view of a transition structure according to an embodiment of the present invention
FIG. 4 is a schematic perspective view of a transition structure according to an embodiment of the present invention
FIG. 5 is an enlarged view of a portion of a transition structure according to an embodiment of the present invention;
FIG. 6 is a schematic illustration in partial cross-sectional view of a transition structure according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of a transition structure modeling according to an embodiment of the present invention;
FIG. 8 is a diagram of S parameter simulation results according to an embodiment of the present invention;
fig. 9 is a diagram of simulation results of S parameters according to an embodiment of the present invention.
Wherein: 1. a top cover plate; 2. an SSMP linker; 3. a kovar frame; 4. a ceramic substrate; 5. a bottom support plate; 6. a radio frequency signal pin pad; 7. a chip; 9. an SSMP connector signal pin; 10. a first layer of ceramic steps; 11. a second layer of ceramic steps; 12. a third layer of ceramic steps; 13. a metallization layer; 14. a vertical ground via; 15. a metal layer.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As shown in fig. 1 to 6, an embodiment of the present invention discloses an HTCC-based SSMP transition structure, which includes a ceramic substrate 4, wherein the ceramic substrate 4 is stepped, and includes a first ceramic step 10, a second ceramic step 11, and a third ceramic step 12, which are sequentially connected from top to bottom, such that the kovar frame 3 with an upward opening of the ceramic substrate 4 is sleeved on the ceramic substrate 4 and welded together by a silver-copper welding process; a through hole penetrating through the second layer of ceramic step 11 and the third layer of ceramic step 12 is formed at the lower part of the ceramic substrate 4 and is used for inserting the SSMP connector signal pin 9, and side wall metallization 13 is performed inside the through hole; the radio frequency signal pin bonding pad 6 is arranged on the second layer of ceramic ladder 11, and the outward width of the SSMP joint pin 9 changes from wide to narrow in a ladder shape and is folded and extended to the right center of the interface of the chip 7; a ground pin pad disposed on the second-layer ceramic substrate 11 and vertically interconnected with the vertical ground via group 14;
the grounding pin pads are respectively positioned on the front surface of the first layer of ceramic ladder 10, the front surface of the second layer of ceramic ladder 11 and two sides of the radio-frequency signal pin pad 6; a plurality of vertical grounding holes 14 are formed in the ceramic substrate 4, and the vertical grounding holes 14 are vertically connected with a metal layer 15 in the ceramic substrate 4 and are vertically connected with a grounding pin pad and a metal layer on the surface of the third layer of ceramic ladder 12; kovar surrounding frame 3 is sleeved on first layer ceramic ladder 10 of ceramic substrate 4, and the opening on Kovar surrounding frame 3 is sealed through top cover plate 1, and top cover plate 1 contacts with the grounding pad on first layer ceramic ladder 10.
The top cover plate 1 is positioned on the first layer of ceramic step 10, has an area larger than the defect area of the first layer of ceramic step 10 and smaller than the minimum area of the opening of the kovar frame 3, and is used for packaging the whole structure to ensure the air tightness; the bottom supporting plate 5 is placed below the kovar surrounding frame 3 and the ceramic substrate 4 and connected through welding, a step-shaped through hole is formed in the bottom supporting plate and corresponds to the shape of the SSMP connector, a section of through hole is reserved for the ceramic substrate 4 with a signal pin inserted into the upper portion, and the axis of the through hole in the bottom supporting plate 5 is overlapped with the axis of the through hole in the upper ceramic substrate 4, which penetrates through the second ceramic step and the third ceramic step.
Compared with the prior art, the SSMP joint transition structure based on HTCC provided by the invention adopts the mode that the through holes are arranged in the ceramic substrate and the metal bottom layer supporting plate, the through holes on the ceramic substrate are subjected to side wall metallization treatment, the SSMP joint is arranged on the metal substrate, and the SSMP joint signal pins are inserted into the through holes of the ceramic substrate and the bottom layer supporting plate to be in signal interconnection with the chip, so that the high-frequency HTCC packaging interface is convenient to design, the parasitic inductance is smaller, the electromagnetic shielding capability is stronger, the occupied area is smaller, the high-frequency signal transmission is easier to realize, the high-frequency signal transmission performance is improved.
As a specific implementation manner of the embodiment of the present invention, referring to fig. 1 to 6, the ceramic substrate is provided with a through hole penetrating through the second layer of ceramic step 11 and the third layer of ceramic step 12, a metallization layer 13 is formed on a sidewall of the through hole, and the through hole overlaps with an axis of the step-shaped through hole of the bottom support plate 5, and the SSMP contact signal pin 9 does not contact with the metallization layer 13. Preferably, as shown in fig. 5, the rf signal pin pad 6 has a step-like change in width, and gradually increases in width from the SSMP signal pin 9 to the outside, and is folded and extended to the center of the interface of the chip 7. In addition, the chip 7 mounting region is located on the third layer of ceramic step, between the second layer of ceramic step and the third layer of ceramic step (i.e. the height of the chip is not higher than the height of the second layer of ceramic step). In addition, for assembly, the SSMP contact 2 is inserted into the stepped through hole of the bottom support plate 5 for soldering, and the SSMP signal pin 9 is inserted into the through hole of the top ceramic substrate 4 overlapping with the axis thereof through the through hole of the bottom support plate 5. Further, in this embodiment, the top cover plate 1, the rf signal pin pad 6, and the ground pin pad 8 are all made of metal materials, and the specific form of the materials is not described herein.
Correspondingly, the invention also discloses an assembly which comprises the SSMP transition structure, a chip 7 and an SSMP joint 2. The chip 7 is welded on the metal layer on the upper surface of the third layer of ceramic ladder through conductive adhesive, and the SSMP joint 2 is welded in the ladder hole of the bottom layer support plate 5; the SSMP connector signal pin 9 extends into a through hole of the upper ceramic substrate 4 through a through hole of the bottom layer support plate 5, the chip 7 is connected with one end of the radio frequency signal pin bonding pad 6 through gold wire bonding, and the SSMP connector signal pin 9 is bonded with the other end of the radio frequency signal bonding pad 6 through gold wire.
The design principle of the invention is as follows:
1) material selection
HTCC is a mature packaging process, which is generally formed by sintering about 90% of alumina or aluminum nitride and a sintering aid at 1600 ℃, and the internal conductive metal is generally high-melting-point metal such as tungsten. The HTCC has good air tightness and welding capacity, high thermal conductivity and bending strength and strong advantage in high-frequency packaging.
2) Design of transmission structure
In a general usage scenario, the possible paths for transmitting signals are: radio frequency signal pin pad- > signal transmission coplanar waveguide- > SSMP connects pin. The signal transmission coplanar waveguide takes an HTCC ceramic substrate inner layer printed line as a radio frequency signal conduction band, takes a grounding pin pad as a grounding surface, and has the following characteristic impedance calculation formula:
Figure BDA0003634767040000061
Figure BDA0003634767040000062
Figure BDA0003634767040000063
wherein Z is the characteristic impedance, ∈ eff Is the effective dielectric constant, K (K), of the coplanar waveguide transmission medium 1 ) And K (K' 1 ) Is the mode of the complete elliptic integral, S is the width of the middle conduction band, W is the distance between the middle conduction band and the ground planes at both sides, h 1 Is the thickness of the coplanar waveguide transmission medium.
The SSMP connector pin is inserted into a through hole of the ceramic substrate, which penetrates through the second layer of ceramic ladder and the third layer of ceramic ladder, and is equivalent to a coaxial line, and the calculation formula of the characteristic impedance of the coaxial line is as follows;
Figure BDA0003634767040000064
wherein Z is the characteristic impedance, ∈ r The relative dielectric constant of the medium filled between the inner conductor and the outer conductor, D is the inner diameter of the outer conductor, and D is the outer diameter of the inner conductor.
3) Impedance matching
In order to ensure stable transmission of radio frequency signals, a transmission path needs to meet the requirement of impedance matching, particularly, the outer diameters of through holes penetrating through the second layer of ceramic step and the third layer of ceramic step of the ceramic substrate, into which the SSMP pins are inserted, and the coaxial outer diameter of transition air in the bottom layer support plate need to be designed, and the final size of the through holes can be determined by calculating and then determining the final size by electromagnetic simulation software.
4) Assembly method
The structure has simple and convenient assembly process, and the radio frequency pin bonding pad of the ceramic substrate is bonded to the chip and the SSMP signal pin by gold wires for connection. The ceramic substrate is welded on the bottom supporting plate, and the SSMP connector is aligned to the stepped through hole in the bottom supporting plate for welding.
The detailed data for each parameter are as follows:
the thickness of the first layer of ceramic step of the ceramic substrate is 0.7mm, the thickness of the second layer of ceramic step is 0.1mm, and the thickness of the third layer of ceramic step is 1.2 mm. The radio frequency signal pin bonding pad is transited to the middle width 0.1mm by broadside width 0.15mm and is transited to the narrow limit 0.05mm at last, and is turned at the position where the length is 1.365mm, and the total length of the radio frequency signal pin bonding pad is 1.875 mm. The metal layers in the ceramic substrate are 21 layers in total, the interval between every two layers is 0.1mm, and the thickness of every layer is 0.01 mm. The outer diameter of the through hole penetrating through the second layer of ceramic step and the third layer of ceramic step is 0.4mm, and the metallization thickness is 0.025 mm. The aperture of the grounding hole in the middle of the ceramic substrate is 0.1 mm. The thickness of the bottom layer supporting plate is 4.5mm, the stepped through holes are gradually reduced from the lower part to the upper part of the ceramic substrate, the width is transited from 3.45mm to 3.05mm, then transited to 2.25mm, and finally transited to the width of 0.6mm only used for the penetration of the signal pins. The model number of the SSMP joint is SSMP-M-J. The thickness of the kovar frame at the top layer of the ceramic substrate is 1.05 mm. The distance between the four sides of the top layer cover plate and the surrounding frame is 0.1 mm.
It should be noted that the above data parameters are provided only for illustrating the present invention, and the specific size of the SSMP transition structure provided by the present invention is not limited to the above description.
Electromagnetic simulation is performed on the HTCC-based SSMP joint transition structure provided by the invention, the transition structure is modeled in an electromagnetic simulation software HFSS, the model is shown in fig. 7, and the simulation result is shown in fig. 8 and 9. According to simulation results, return loss and insertion loss of the SSMP joint transition structure based on the HTCC meet the requirements of high-frequency TR component packaging in 22-23 GHz.
According to the transition structure provided by the invention, the scheme that the SSMP connector is placed in the through hole formed in the bottom layer supporting plate on the ceramic substrate and the signal pin penetrates through the through holes to be bonded to the radio frequency signal pin through the gold wire is adopted, so that the signal pin and the through holes form a coaxial structure which can be used for transmitting radio frequency signals, and as the coaxial medium is air, the dielectric constant is low, the requirement on the outer diameter of the coaxial outer conductor is smaller and the occupied area is smaller under the condition that the impedance is equal to 50 ohms and the outer diameter of the fixed coaxial inner conductor is smaller; the side wall of the through hole of the ceramic substrate is subjected to metallization treatment, parasitic inductance is smaller, the electromagnetic shielding effect is better, the performance of high-frequency transmission can be improved, and the requirement of a high-frequency TR component is met.

Claims (10)

1. An SSMP transition structure based on HTCC, characterized in that: the ceramic substrate (4) is in a step shape and comprises a first ceramic step (1), a second ceramic step (11) and a third ceramic step (12) which are sequentially connected from top to bottom, a metal layer (15) is formed in the first ceramic step (10), the second ceramic step (11) and the third ceramic step (12), and a metal layer is formed on the upper surface of the third ceramic step (12) and used for placing a chip (7); a bottom layer supporting plate (5) is fixed on the lower surface of the ceramic substrate (4), a stepped hole matched with the SSMP connector (2) is formed in the bottom layer supporting plate (5), and a through hole penetrating through the second layer of ceramic step and the third layer of ceramic step is formed in the ceramic substrate (4) corresponding to the SSMP connector (2); the radio frequency signal pin bonding pad (6) is positioned on the front surface of the second layer of ceramic ladder (11), one end of the radio frequency signal pin bonding pad is arranged close to the through hole, the other end of the radio frequency signal pin bonding pad is arranged close to the metal layer on the upper surface of the third layer of ceramic ladder (12), and the radio frequency signal pin bonding pad (6) is used for connecting the SSMP connector signal pin (9) and a pin of the chip (7) together; the grounding pin pads are respectively positioned on the front surface of the first layer of ceramic ladder (10), the front surface of the second layer of ceramic ladder (11) and two sides of the radio-frequency signal pin pad (6); a plurality of vertical grounding holes (14) are formed in the ceramic substrate (4), and the vertical grounding holes (14) are vertically connected with a metal layer (15) in the ceramic substrate (4) and are vertically connected with a grounding pin pad and a metal layer on the surface of a third-layer ceramic ladder (12); kovar surrounding frame (3) is sleeved on a first layer of ceramic ladder (10) of ceramic substrate (4), an opening in Kovar surrounding frame (3) is sealed through top cover plate (1), and top cover plate (1) is in contact with a grounding pad on first layer of ceramic ladder (10).
2. The HTCC-based SSMP transition structure of claim 1, wherein: the bottom layer supporting plate (5) is welded below the ceramic substrate (4), and the axle center of the stepped hole in the bottom layer supporting plate (5) is overlapped with the axle centers of the through holes in the second layer ceramic step (11) and the third layer ceramic step (12).
3. The HTCC-based SSMP transition structure of claim 1, wherein: and a metallization layer (13) is formed on the inner wall of the through hole, and when the SSMP connector signal pin is inserted into the metallized through hole, the SSMP connector signal pin (9) is not in contact with the through hole of the metallization layer.
4. The HTCC-based SSMP transition structure of claim 1, wherein: the radio frequency signal pin bonding pad (6) changes from wide to narrow in width from the SSMP connector signal pin (9) to the outside and bends and extends to the right center position of the chip interface.
5. The HTCC-based SSMP transition structure of claim 1, wherein: perpendicular ground connection hole (14) are including the first ground connection hole that runs through first layer pottery ladder (10), second floor pottery ladder (11) and third layer pottery ladder (12), run through the second ground connection hole of second floor pottery (11) and third layer pottery ladder (12), and run through the third ground connection hole of third layer pottery ladder (12).
6. The HTCC-based SSMP transition structure of claim 1, wherein: the metal layers (15) in the ceramic substrate (4) are uniformly distributed in the ceramic substrate at intervals.
7. The HTCC-based SSMP transition structure of claim 1, wherein: the top cover plate (1), the radio frequency signal pin bonding pad (6) and the grounding pin bonding pad are made of metal.
8. An assembly, characterized by: the SSMP transition structure comprises the SSMP transition structure as claimed in any one of claims 1 to 7, and further comprises a chip (7) and an SSMP connector (2), wherein the chip (7) is welded on the metal layer on the upper surface of the third layer of ceramic step, the SSMP connector (2) is welded in a stepped hole of the bottom support plate (5), an SSMP connector signal pin (9) extends into a through hole of the upper ceramic substrate (4) through the through hole of the bottom support plate (5), the chip (7) is connected with one end of the radio frequency signal pin bonding pad (6) through gold wire bonding, and the SSMP connector signal pin (9) is connected with the other end of the radio frequency signal bonding pad (6) through gold wire bonding.
9. The assembly of claim 8, wherein: and the chip (7) is welded on the metal layer on the upper surface of the third layer of ceramic step through conductive adhesive.
10. The assembly of claim 8, wherein: the SSMP joint (2) adopts an SSMP-M-J model.
CN202210499413.3A 2022-05-09 2022-05-09 SSMP transition structure and assembly based on HTCC Pending CN114899630A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117374575A (en) * 2023-12-08 2024-01-09 石家庄军特电子科技有限公司 Radio frequency signal transmitting module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117374575A (en) * 2023-12-08 2024-01-09 石家庄军特电子科技有限公司 Radio frequency signal transmitting module
CN117374575B (en) * 2023-12-08 2024-02-09 石家庄军特电子科技有限公司 Radio frequency signal transmitting module

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