CN106159404A - A kind of non-uniform microstrip line is to strip line transition structure - Google Patents
A kind of non-uniform microstrip line is to strip line transition structure Download PDFInfo
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- CN106159404A CN106159404A CN201610871225.3A CN201610871225A CN106159404A CN 106159404 A CN106159404 A CN 106159404A CN 201610871225 A CN201610871225 A CN 201610871225A CN 106159404 A CN106159404 A CN 106159404A
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- microstrip line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/18—Waveguides; Transmission lines of the waveguide type built-up from several layers to increase operating surface, i.e. alternately conductive and dielectric layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
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Abstract
The invention discloses a kind of non-uniform microstrip line to strip line transition structure, including: metal level and dielectric layer, the metal level number of plies is N, N >=4, and N shell metal level stacks gradually setting, and the number of plies of dielectric layer is N 1, and dielectric layer is arranged between every adjacent two layers metal level；Also include: non-homogeneous input microstrip line, non-homogeneous output microstrip line, strip line, circular trough and signal blind hole；Non-homogeneous input, output microstrip line are arranged on first layer metal layer；When metal level number of plies N=4, strip line is arranged on third layer metal level, and circular trough is arranged on second layer metal layer；When metal level number of plies N > 4, strip line is arranged on the 3rd to N any one layer of metal level between 1 layer, and circular trough is arranged on any one layer between the metal level at the second to strip line place；The upright projection of signal blind hole is positioned at the upright projection of circular trough；Signal blind hole is used for connecting strip line and non-homogeneous input, output micro-strip.The present invention can non-uniform microstrip line structure.
Description
Technical field
The present invention relates to the radiofrequency signal transition structure in a kind of microwave transceiver module, particularly to a kind of non-homogeneous micro-strip
Line is to strip line transition structure.
Background technology
The multifunction of electronic information, miniaturization, short construction cycle are that system user constantly proposes with low cost
Requirement, is also always its developing direction.As a example by PMC, the size of mobile phone narrows down to existing from " fragment of brick " of the nineties
Card holder size, function expands to present voice, data, multimedia, internet from simple call at that time, take pictures and
MP3 etc..The multifunction of military electronic information system (such as spaceborne sensing and processing system) and miniaturization are paid close attention to especially
Focus.
Microstrip line is the transmission line that a kind of inhomogeneous medium is filled, though it can not propagate real TEM mould, its transmission
Pattern is quite similar with TEM mould.In the most many microwave modules, active device is typically placed in circuit board surface metal
On, between device, many employing microstrip lines interconnect, and for the ease of installing and debugging, save the layout area of circuit, it is achieved
Miniaturization Design, is often embedded in the inside of multilager base plate by DC bias networks, passive circuit etc., and strip transmission line due to
The structure of himself and design feature, have preferable shielding character.How to realize surface radio frequency layer microstrip line and middle strip line
Between signal interconnection transmission, become one of key technology of designing for microwave module.
Find after existing micro-strip is retrieved to strip line exchanging structure, as information communication the 2nd phase in 2016 is sent out
Table (KU wave band ltcc substrate micro-strip is to the vertical Networking Design of strip line), IEEE TRANS.ON MICROWAVE AND THEORY
(the High Performances of Shielded LTCC Vertical delivered in TECHNOLOGY volume 53
Transitions From DC to 50GHz), the two all realizes uniform microstrip line to strip line by loading LTCC technique
Transition structure, but its structure cannot be applicable to non-uniform microstrip line structure.
Summary of the invention
The present invention is directed to above-mentioned problems of the prior art, propose a kind of non-uniform microstrip line and tie to strip line transition
Structure, in multilayer dielectricity Rotating fields, on different number of plies dielectric thicknesses, processing realizes different microstrip lines, blind by adjusting signal
Space around hole, thus the bandwidth of operation needed for realizing.
For solving above-mentioned technical problem, the present invention is achieved through the following technical solutions:
The present invention provide a kind of non-uniform microstrip line to strip line transition structure, comprising: metal level and dielectric layer, institute
The number of plies stating metal level is N, N >=4, and metal level described in N shell stacks gradually setting, and the number of plies of described dielectric layer is N-1, is given an account of
Matter layer is arranged at described in every adjacent two layers between metal level；
Also include: non-homogeneous input microstrip line, non-homogeneous output microstrip line, strip line, circular trough and signal blind hole；
Described non-homogeneous input microstrip line and described non-homogeneous output microstrip line are arranged on metal level described in ground floor；
When number of plies N=4 of described metal level, described strip line is arranged on metal level described in third layer, described circle
Groove is arranged on metal level described in the second layer；
Number of plies N when described metal level > 4 time, described strip line is arranged at metal level described in third layer to described in N-1 layer
On the described metal level of any one layer between metal level, described circular trough is arranged at second layer metal layer to described strip line place
Metal level between the described metal level of any one layer on；
Described signal blind hole is used for connecting described strip line and described non-homogeneous input microstrip line, and connects described micro-strip
Line and described non-homogeneous output microstrip line.
It is preferred that non-uniform microstrip line also includes to strip line transition structure: metallization via, described metallization via sets
It is placed in described non-homogeneous input microstrip line and/or the both sides of described non-homogeneous output microstrip line.
It is preferred that non-uniform microstrip line also includes to strip line transition structure: pad, described pad is mended for loading capacitance
Repaying, described capacitance compensation is connected with described signal blind hole.
It is preferred that described circular trough is that etching is formed on described metal level.
It is preferred that one end of described non-homogeneous input microstrip line and described non-homogeneous output microstrip line is unsettled, it is used for welding
Connect sub-miniature A connector to test.
It is preferred that the width of described circular trough is used for regulating stationary wave characteristic.
It is preferred that the width of described non-homogeneous input microstrip line, the width of described non-homogeneous output microstrip line and described
The width of strip line is used for regulating its respective characteristic impedance.
Compared to prior art, the invention have the advantages that
(1) non-uniform microstrip line that the present invention provides is to strip line transition structure, is provided with more metal layers and multilamellar is situated between
Matter Rotating fields, can process on the dielectric layer of different medium thickness and realize different microstrip lines, by adjusting around signal blind hole
Space, thus realize needed for bandwidth of operation；
(2) non-uniform microstrip line of the present invention is to strip line transition structure, uses non-uniform microstrip line method, its motility
By force, extensibility is strong, and application scenario is wide；
(3) non-uniform microstrip line of the present invention is to strip line excessive structural, can load pad, be used for adding in signal blind hole
Carry capacitance compensation, stationary wave characteristic can be improved.
Certainly, the arbitrary product implementing the present invention it is not absolutely required to reach all the above advantage simultaneously.
Accompanying drawing explanation
Below in conjunction with the accompanying drawings embodiments of the present invention are described further:
Fig. 1 is the non-uniform microstrip line structural representation to strip line transition structure of embodiments of the invention；
Fig. 2 is the non-uniform microstrip line birds-eye perspective to strip line transition structure of embodiments of the invention；
Fig. 3 is the non-uniform microstrip line size indication figure to strip line transition structure of embodiments of the invention；
When Fig. 4 is the r1 change in Fig. 3, transmission characteristic | S21 | curve of the input port of transition structure to output port
Situation of change；
When Fig. 5 is the r2 change in Fig. 3, transmission characteristic | S21 | curve of the input port of transition structure to output port
Situation of change；
Fig. 6 is the narrow band transmission structure chart of the transition structure test of embodiments of the invention；
Fig. 7 is the return loss result figure of the transition structure of embodiments of the invention.
Label declaration: 1-metal level, 2-dielectric layer, 3-non-homogeneous input microstrip line, 4-non-homogeneous output microstrip line, 5-carries
Shape line, 6-signal blind hole, 7-circular trough, 8-metallizes via, 9-pad.
Detailed description of the invention
Elaborating embodiments of the invention below, the present embodiment is carried out under premised on technical solution of the present invention
Implement, give detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following enforcement
Example.
In conjunction with Fig. 1-Fig. 7, the non-uniform microstrip line of the present invention is described in detail to strip line transition structure, its bag
Including: metal level and dielectric layer, the number of plies of metal level is N, N >=4, and N shell metal level stacks gradually setting, and the number of plies of dielectric layer is
N-1, dielectric layer is arranged between every adjacent two layers metal level；Also include: non-homogeneous input microstrip line, non-homogeneous output micro-strip
Line, strip line, circular trough and signal blind hole；Non-homogeneous input microstrip line and non-homogeneous output microstrip line are arranged at ground floor gold
Belong on layer；When number of plies N=4 of metal level, strip line is arranged on third layer metal level, and circular trough is arranged at second layer metal
On layer；Number of plies N when metal level > 4 time, strip line is arranged at any one between N-1 layer metal level of third layer metal level
On layer metal level, circular trough is arranged at second layer metal layer to any one layer of metal level between the metal level at strip line place
On；The upright projection of signal blind hole is positioned at the upright projection of circular trough, and it is defeated with non-homogeneous that signal blind hole is used for connecting strip line
Enter microstrip line, and connect microstrip line and non-homogeneous output microstrip line.
The present embodiment is as a example by six layers of metal level 1, and dielectric layer 2 is five layers, and its structural representation is as it is shown in figure 1, non-homogeneous
Input microstrip line 3 and non-homogeneous output microstrip line 4 are arranged on first layer metal layer 1, and strip line 5 is arranged on the 4th layer of metal
On layer, circular trough 7 is arranged on second layer metal layer 1, signal blind hole 6 connect non-homogeneous input microstrip line 3 and strip line 5 and
Connect non-homogeneous output microstrip line 4 and strip line 5.Being additionally provided with metallization via 8 in the present embodiment, metallization via 8 is arranged
In non-homogeneous input microstrip line 3 and non-homogeneous output microstrip line 4 around, for shielded signal, improve transmission characteristic.This enforcement
Being additionally provided with pad 9 in example, pad 9 is carried in signal blind hole 6, compensates for loading capacitance, is connected with signal blind hole 6, can
Improve standing wave.
In the present embodiment, one end of non-homogeneous input microstrip line 3 and non-homogeneous output microstrip line 4 is unsettled, is used for welding SMA
Joint is tested.
In different embodiments, when strip line 5 is arranged on the 4th layer of metal level, circular trough 7 may also be disposed on third layer
On metal level；Strip line 5 may also be arranged on layer 5 metal level, and when being arranged on layer 5, circular trough 7 may be provided at
Two layers, may also be arranged on third layer, can also be provided at the 4th layer.
As Fig. 3 gives the size indication figure of the transition structure of the present embodiment, including: the diameter r1 of circular trough, pad
Diameter r2, the diameter r3 of signal blind hole, the width w1 of strip line 5, the width w2 of non-homogeneous input microstrip line 3 and non-homogeneous defeated
Going out the width w3 for microstrip line 4, the characteristic of wave filter is all had a certain impact by these sizes, can carry out difference as required
Setting.
As illustrated in figures 4-5, sets forth along with r1, r2 change time, the transition structure of non-uniform microstrip line to strip line
Input port to transmission characteristic | S21 | curvilinear motion situation of output port, i.e. standing wave variation characteristic.When becoming big along with r1,
Signal is the biggest by the bandwidth of blind hole, and standing wave is the best；When becoming big along with r2, the electric capacity being carried on telltale hole strengthens, standing wave
The best.
Such as Fig. 6,7 narrow band transmission and the return loss results that sets forth test, in institute's frequency measurement section, Insertion Loss is less than
0.4dB, standing wave is more than 20dB, and result is excellent.
Disclosed herein is only the preferred embodiments of the present invention, and this specification is chosen and specifically described these embodiments, is
In order to preferably explain the principle of the present invention and actual application, it it is not limitation of the invention.Any those skilled in the art
The modifications and variations done in the range of description, all should fall in the range of the present invention is protected.
Claims (7)
1. a non-uniform microstrip line is to strip line transition structure, it is characterised in that including: metal level and dielectric layer, described
The number of plies of metal level is N, N >=4, and metal level described in N shell stacks gradually setting, and the number of plies of described dielectric layer is N-1, described medium
Layer is arranged at described in every adjacent two layers between metal level；
Also include: non-homogeneous input microstrip line, non-homogeneous output microstrip line, strip line, circular trough and signal blind hole；
Described non-homogeneous input microstrip line and described non-homogeneous output microstrip line are arranged on metal level described in ground floor；
When number of plies N=4 of described metal level, described strip line is arranged on metal level described in third layer, and described circular trough sets
It is placed on metal level described in the second layer；
Number of plies N when described metal level > 4 time, described strip line is arranged at metal level described in third layer to the described metal of N-1 layer
On the described metal level of any one layer between Ceng, described circular trough is arranged at the gold at second layer metal layer extremely described strip line place
Belong on the described metal level of any one layer between layer；
Described signal blind hole is used for connecting described strip line and described non-homogeneous input microstrip line, and connect described microstrip line with
Described non-homogeneous output microstrip line.
Non-uniform microstrip line the most according to claim 1 is to strip line transition structure, it is characterised in that also include: metal
Changing via, described metallization via is arranged at described non-homogeneous input microstrip line and/or the two of described non-homogeneous output microstrip line
Side.
Non-uniform microstrip line the most according to claim 1 is to strip line transition structure, it is characterised in that also include: pad,
Described pad compensates for loading capacitance, and described capacitance compensation is connected with described signal blind hole.
Non-uniform microstrip line the most according to claim 1 is to strip line transition structure, it is characterised in that described circular trough is
On described metal level, etching is formed.
Non-uniform microstrip line the most according to claim 1 is to strip line transition structure, it is characterised in that described non-homogeneous defeated
The one end entering microstrip line and described non-homogeneous output microstrip line is unsettled, is used for welding sub-miniature A connector and tests.
Non-uniform microstrip line the most according to claim 1 is to strip line transition structure, it is characterised in that described circular trough
Width is used for regulating stationary wave characteristic.
Non-uniform microstrip line the most according to claim 1 is to strip line transition structure, it is characterised in that described non-homogeneous defeated
The width entering the width of microstrip line, the width of described non-homogeneous output microstrip line and described strip line is respective for regulating it
Characteristic impedance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610871225.3A CN106159404B (en) | 2016-09-29 | 2016-09-29 | A kind of non-uniform microstrip line is to strip line transition structure |
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|---|---|---|---|
| CN201610871225.3A CN106159404B (en) | 2016-09-29 | 2016-09-29 | A kind of non-uniform microstrip line is to strip line transition structure |
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| CN106159404A true CN106159404A (en) | 2016-11-23 |
| CN106159404B CN106159404B (en) | 2019-10-11 |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106602195A (en) * | 2016-12-21 | 2017-04-26 | 中国航空工业集团公司雷华电子技术研究所 | Waveguide belt-shaped line transition structure |
| CN107634325A (en) * | 2017-08-23 | 2018-01-26 | 西安电子工程研究所 | A kind of new S/C two wavebands communication array antenna |
| CN109301654A (en) * | 2018-11-13 | 2019-02-01 | 昆山普尚电子科技有限公司 | Impedance regulator and adjusting method |
| CN109950673A (en) * | 2019-04-02 | 2019-06-28 | 中国电子科技集团公司第三十八研究所 | A kind of broadband strip-line debugging structure and its design method with slow wave characteristic |
| CN110265761A (en) * | 2019-06-30 | 2019-09-20 | 瑞声精密制造科技(常州)有限公司 | A kind of transmission line |
| CN111132458A (en) * | 2019-12-26 | 2020-05-08 | 航天科工微系统技术有限公司 | Microwave signal vertical interconnection structure and interconnection method between printed circuit boards |
| CN111540995A (en) * | 2019-12-20 | 2020-08-14 | 瑞声科技(新加坡)有限公司 | Transmission line, electronic device, and method for manufacturing transmission line |
| CN111769348A (en) * | 2020-06-12 | 2020-10-13 | 中国船舶重工集团公司第七二四研究所 | Transition structure of asymmetric strip line and microstrip line |
| CN112397863A (en) * | 2019-08-16 | 2021-02-23 | 稜研科技股份有限公司 | Switching structure for millimeter wave and multilayer switching structure |
| CN112510333A (en) * | 2020-11-25 | 2021-03-16 | 安徽四创电子股份有限公司 | Multilayer board cross wiring network |
| CN114126209A (en) * | 2021-11-05 | 2022-03-01 | 中国电子科技集团公司第二十九研究所 | LTCC microwave multilayer combiner network based on vertical via holes |
| WO2022141203A1 (en) * | 2020-12-30 | 2022-07-07 | 华为技术有限公司 | Signal transmission structure for connection of strip line and microstrip line, and antenna device |
| CN116169451A (en) * | 2023-04-03 | 2023-05-26 | 石家庄烽瓷电子技术有限公司 | Three-dimensional packaged miniaturized power divider |
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Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106602195A (en) * | 2016-12-21 | 2017-04-26 | 中国航空工业集团公司雷华电子技术研究所 | Waveguide belt-shaped line transition structure |
| CN107634325A (en) * | 2017-08-23 | 2018-01-26 | 西安电子工程研究所 | A kind of new S/C two wavebands communication array antenna |
| CN109301654A (en) * | 2018-11-13 | 2019-02-01 | 昆山普尚电子科技有限公司 | Impedance regulator and adjusting method |
| CN109950673A (en) * | 2019-04-02 | 2019-06-28 | 中国电子科技集团公司第三十八研究所 | A kind of broadband strip-line debugging structure and its design method with slow wave characteristic |
| CN110265761A (en) * | 2019-06-30 | 2019-09-20 | 瑞声精密制造科技(常州)有限公司 | A kind of transmission line |
| CN112397863A (en) * | 2019-08-16 | 2021-02-23 | 稜研科技股份有限公司 | Switching structure for millimeter wave and multilayer switching structure |
| US11316240B2 (en) | 2019-08-16 | 2022-04-26 | Tmy Technology Inc. | Transition structure for coupling first and second transmission lines through a multi-layer structure and including a cavity corresponding to the second transmission line |
| CN111540995A (en) * | 2019-12-20 | 2020-08-14 | 瑞声科技(新加坡)有限公司 | Transmission line, electronic device, and method for manufacturing transmission line |
| CN111540995B (en) * | 2019-12-20 | 2022-04-08 | 瑞声科技(新加坡)有限公司 | Transmission line, electronic device, and method for manufacturing transmission line |
| CN111132458A (en) * | 2019-12-26 | 2020-05-08 | 航天科工微系统技术有限公司 | Microwave signal vertical interconnection structure and interconnection method between printed circuit boards |
| CN111132458B (en) * | 2019-12-26 | 2021-06-01 | 航天科工微系统技术有限公司 | Microwave signal vertical interconnection structure and interconnection method between printed circuit boards |
| CN111769348A (en) * | 2020-06-12 | 2020-10-13 | 中国船舶重工集团公司第七二四研究所 | Transition structure of asymmetric strip line and microstrip line |
| CN112510333A (en) * | 2020-11-25 | 2021-03-16 | 安徽四创电子股份有限公司 | Multilayer board cross wiring network |
| WO2022141203A1 (en) * | 2020-12-30 | 2022-07-07 | 华为技术有限公司 | Signal transmission structure for connection of strip line and microstrip line, and antenna device |
| CN114126209A (en) * | 2021-11-05 | 2022-03-01 | 中国电子科技集团公司第二十九研究所 | LTCC microwave multilayer combiner network based on vertical via holes |
| CN114126209B (en) * | 2021-11-05 | 2023-12-01 | 中国电子科技集团公司第二十九研究所 | LTCC microwave multilayer road network based on vertical via holes |
| CN116169451A (en) * | 2023-04-03 | 2023-05-26 | 石家庄烽瓷电子技术有限公司 | Three-dimensional packaged miniaturized power divider |
| CN116169451B (en) * | 2023-04-03 | 2024-05-07 | 石家庄烽瓷电子技术有限公司 | Three-dimensional packaged miniaturized power divider |
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