CN115425380B - Broadband transition structure of dielectric integrated suspension parallel strip line-back ground coplanar waveguide - Google Patents
Broadband transition structure of dielectric integrated suspension parallel strip line-back ground coplanar waveguide Download PDFInfo
- Publication number
- CN115425380B CN115425380B CN202210953273.2A CN202210953273A CN115425380B CN 115425380 B CN115425380 B CN 115425380B CN 202210953273 A CN202210953273 A CN 202210953273A CN 115425380 B CN115425380 B CN 115425380B
- Authority
- CN
- China
- Prior art keywords
- section
- transmission line
- strip line
- line
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000007704 transition Effects 0.000 title claims abstract description 54
- 239000000725 suspension Substances 0.000 title claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 88
- 230000005540 biological transmission Effects 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 230000008859 change Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 5
- 238000012360 testing method Methods 0.000 abstract description 5
- 230000010354 integration Effects 0.000 abstract description 3
- 238000004806 packaging method and process Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 101150075118 sub1 gene Proteins 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Landscapes
- Waveguides (AREA)
Abstract
The invention discloses a broadband transition structure from a dielectric integrated suspension parallel strip line to a back-to-ground coplanar waveguide, which is divided into the dielectric integrated suspension parallel strip line, the strip line and the back-to-ground coplanar waveguide, wherein the dielectric integrated suspension parallel strip line is distributed on the upper side and the lower side of a dielectric substrate; in the transition process to the strip line, the line width of the G5 transmission line is kept unchanged or gradually reduced to be consistent with the line width of the G5 layer of the strip line, and the line width of the G6 transmission line is gradually increased; when passing through the section where the side boundary of the air cavity is positioned, the G5 transmission line is connected with the middle metal layer of the strip line; the G6 transmission line is connected with the lower metal layer of the strip line; when the coplanar waveguide is transited back to ground, the G5 transmission line is connected with the middle metal layer of the GCPW; the G6 transmission line is connected to the lower metal layer of the GCPW. The invention realizes the integration and interconnection of various transmission lines, can realize various circuit functions, provides guarantee for the circuit package test of SISPSL, and solves the problems of package and loss of a transition circuit.
Description
Technical Field
The invention relates to the technical field of radio frequency microwave circuits, in particular to a broadband transition structure from a dielectric integrated suspension parallel strip line to a back-to-ground coplanar waveguide.
Background
Wireless communication technology is rapidly evolving and multiple communication modes cause inter-system interference. Improving the anti-interference capability of the system and maintaining the signal to noise ratio become hot spot problems. The double-sided parallel strip line is a common balanced transmission line in radio frequency microwave circuits. The balance circuit has symmetry, can effectively restrain noise signal, reduces the mutual crosstalk of circuit subassembly. The structure of the double-sided parallel strip line comprises a dielectric substrate and metal strips with upper and lower surfaces being parallel and symmetrical. The double-sided parallel strip line is a microwave transmission line in a planar form, and the electromagnetic field distribution of the microwave transmission line is similar to that of a microstrip line. The double-sided parallel strip line is used as a transmission line exposed in the air, and needs to be packaged by a metal shell, so that the circuit of the radio frequency module formed by the double-sided parallel strip line is large in size, heavy in weight and high in cost. Meanwhile, radiation loss is a problem to be solved.
The dielectric integrated suspension wires (substrate integrated suspended line, SISL) are novel transmission line structures, and a multilayer board structure is usually obtained by using a printed circuit board (Printed Circuit Board, PCB) process, and cavities are hollowed out, so that dielectric loss is further reduced. And a metal through hole structure is adopted, so that the metal side wall effect is equivalently realized. The dielectric integrated suspension parallel strip line (substrate integrated suspended parallel strip line, SISPSL) is a method for embedding double-sided parallel strip lines in a multilayer SISL, so that the anti-interference capability of a system is improved, and simultaneously, the electromagnetic loss, especially the radiation loss, can be reduced, and the self-packaging characteristic is realized.
Because the SISPSL belongs to a balanced double-sided transmission line, in practical test, the SISPSL is difficult to directly connect with a common radio frequency coaxial connector, and is inconvenient to directly test the SISPSL. To test the sisbisl balanced transmission line and its circuit, a broadband transition structure needs to be designed. The back-to-ground coplanar waveguide (Grounded Coplanar Waveguide, GCPW) is a common transmission line structure, and is a single-ended circuit type compared to the balanced transmission line of SISPSL. GCPW is also compatible with commonly used rf coaxial connectors. Therefore, the realization of the transition from SISPSL to GCPW has important research significance and application value.
Disclosure of Invention
The invention aims at overcoming the technical defects in the prior art and provides a broadband transition structure of a dielectric integrated suspension parallel strip line-back coplanar waveguide.
The technical scheme adopted for realizing the purpose of the invention is as follows:
a broadband transition structure of a dielectric integrated suspended parallel strip to back-to-ground coplanar waveguide, comprising:
dielectric integrated suspended parallel striplines, striplines (SL) and back-to-ground coplanar waveguides; the broadband transition structure is a symmetrical back-to-back structure, two ports which are symmetrically arranged are respectively connected with symmetrically distributed back-to-ground coplanar waveguides, the back-to-ground coplanar waveguides are connected with symmetrically distributed strip lines, and the strip lines are connected with medium integrated suspension parallel strip lines in the middle part;
distributed in the area between the N-N ' section and the L-L ' section is a medium integrated suspension parallel strip line, a G5 transmission line and a G6 transmission line of the medium integrated suspension parallel strip line are arranged in parallel, the width of the G5 transmission line is unchanged or a narrowing gradual change structure is transited from the middle to two side strip line parts, the width of the G6 transmission line is increased, a widening gradual change structure is transited from the middle to two side strip line parts, and the widths of the G5 transmission line and the G6 transmission line are consistent at the section N-N '; the section M-M ' between the N-N ' section and the L-L ' section is provided with a G6 transmission line width ratio G5 transmission line width;
when passing through the section L-L ', the G5 transmission line is connected with the middle metal layer of the strip line at the section L-L'; g6 transmission line is widened and then connected with the lower metal layer of the strip line at section L-L';
when passing through the section L-L', the transmission line is transited from the medium integrated suspension parallel strip line to the strip line structure;
when the section K-K' is passed, the middle metal layer of the strip line is connected with the middle metal layer of the back-to-ground coplanar waveguide; the lower metal layer of the strip line is connected with the lower metal layer of the back-to-ground coplanar waveguide;
when the section K-K' is passed, the transmission line is transited from the strip line to the back ground coplanar waveguide structure;
the cross section N-N 'is a symmetry axis of the whole back-to-back transition structure, the parallel strip line of the medium integrated suspension is divided into two symmetrical parts, the cross section L-L' coincides with the boundary of an air cavity inside the parallel strip line of the medium integrated suspension, the cross section M-M 'is positioned between the cross section L-L' and the cross section N-N ', and the cross section K-K' is positioned at the junction of the strip line and the back-to-ground coplanar waveguide.
After the G6 transmission line extends from the symmetrical line N-N' to two sides for a certain distance, the medium substrate where the G6 transmission line is gradually and symmetrically widened from the middle to two sides in a triangular structure and gradually covered on the medium substrate is connected with the boundary of the air cavity to form a symmetrical hourglass-shaped structure.
After the G6 transmission line extends from the symmetrical line N-N' to two sides for a certain distance, the medium substrate where the G6 transmission line is gradually and symmetrically widened from the middle to two sides in a step-like transition mode and gradually covers the medium substrate is connected with the boundary of the air cavity to form a symmetrical step-like structure.
After the G6 transmission line extends from the symmetrical line N-N' to two sides for a certain distance, the medium substrate where the G6 transmission line is gradually and symmetrically widened from the middle to two sides in a chamfering mode and gradually covers the G6 transmission line is connected with the boundary of the air cavity to form a symmetrical chamfering structure.
The SISPSL of the invention realizes low loss and self-packaging by using the SISL, effectively reduces electromagnetic loss, reduces the overall size of the circuit, and is beneficial to miniaturization and high-integration circuit design.
The transition from SISPSL to GCPW provided by the invention realizes the integration and interconnection of various transmission lines on the same multilayer printed circuit board platform, can realize various circuit functions, and provides a guarantee for the circuit package test of SISPSL.
The transition structure provided by the invention can adjust the bandwidth and the working frequency band of the transition circuit and realize other functions by adjusting the transition form of the topology and packaging part of the topology, and has design flexibility.
Compared with a double-sided parallel strip line circuit needing to be packaged, the transition structure provided by the invention has smaller physical length, and can reduce the area and the size of a corresponding circuit module.
The prior art transition structures have large radiation losses because their transition structures are exposed to air. According to the invention, the problem of radiation loss is solved by introducing the self-packaging structure, and the self-packaging can avoid the influence of the late addition of the metal shell on the performance of the transition circuit.
Compared with a transition circuit needing to be packaged, the transition structure provided by the invention has the characteristic of self-packaging integration, and the effect of external metal shielding is not required to be introduced to reduce loss, so that the influence on the circuit performance after the metal shell is packaged can be effectively avoided.
Drawings
Fig. 1 is a top view of a metal layer G5 in a dielectric integrated suspended parallel strip (SISPSL) to back ground coplanar waveguide (GCPW) transition structure of the present invention.
Fig. 2 is a top view of a metal layer G6 in a dielectric integrated suspended parallel strip (SISPSL) to back ground coplanar waveguide (GCPW) transition structure of the present invention.
Fig. 3 is a three-part schematic (fully symmetrical) view of a metal layer G5 in a dielectric integrated suspended parallel strip (sissl) to back ground coplanar waveguide (GCPW) transition structure of the present invention.
Fig. 4 is a three-part schematic (fully symmetrical) view of a metal layer G6 in a dielectric integrated suspended parallel strip (sissl) to back ground coplanar waveguide (GCPW) transition structure of the present invention.
Fig. 5 is a schematic cross-sectional view of a dielectric integrated suspended parallel strip line (sissl) at the N-N' section in fig. 1 according to the present invention.
Fig. 6 is a schematic cross-sectional view of a dielectric integrated suspended parallel strip line (sissl) at section M-M' in fig. 1 according to the present invention.
Fig. 7 is a schematic cross-sectional view of a Strip Line (SL) at the L-L' section in fig. 1 according to the present invention.
FIG. 8 is a schematic cross-sectional view of a back ground coplanar waveguide (GCPW) at section K-K' in FIG. 1 in accordance with the present invention.
Fig. 9 is a plan view of a diagonal transition structure of the metal layer G6 of the present invention.
Fig. 10 is a top view of the stepped transition structure of the metal layer G6 of the present invention.
Fig. 11 is a top view of the circular arc transition structure of the metal layer G6 of the present invention.
Fig. 12 is a top view of metal layers G5, G6 in the transition structure of the dielectric integrated suspended parallel strip (SISPSL) to back ground coplanar waveguide (GCPW) of the present invention.
FIG. 13 is a schematic view of a simulation of scattering parameters of a back-to-back structure of a dielectric integrated suspended parallel strip line (SISPSL) to back-to-ground coplanar waveguide (GCPW) transition.
Detailed Description
The invention is described in further detail below with reference to the drawings and the specific examples. It should be understood that the detailed description is presented by way of example only and is not intended to limit the invention.
The transitional back-to-back structure of a dielectric integrated suspended parallel strip (SISPSL) to a back-to-ground coplanar waveguide (GCPW) of an embodiment of the present invention includes a dielectric integrated suspended parallel strip, a strip line, and a back-to-ground coplanar waveguide, as shown in fig. 3 and 4. For the self-packaging transmission line structure, parallel metal strips are printed on the upper and lower surfaces of a dielectric substrate, the double-sided parallel metal strips are packaged in an equivalent metal shielding shell by utilizing a multi-layer plate structure and a printed circuit board process, the equivalent metal shielding shell comprises 10 metal layers, namely a metal layer G1, a metal layer G2, a metal layer G3, a metal layer G4, a metal layer G5, a metal layer G6, a metal layer G7, a metal layer G8, a metal layer G9 and a metal layer G10, 5 layers of dielectric substrates (see network-shaped line coverage areas in fig. 5, 6, 7 and 8) are arranged, the dielectric substrates are respectively a dielectric substrate Sub1, a dielectric substrate Sub2, a dielectric substrate Sub3, a dielectric substrate Sub4, a dielectric substrate Sub5, the metal layer G1, the metal layer G2 is arranged on two sides of the dielectric substrate Sub1, the metal layer G3, the metal layer G4 is arranged on two sides of the dielectric substrate Sub2, the metal layer G6 is arranged on two sides of the dielectric substrate Sub3, the metal layer G7, the metal layer G8 is arranged on two sides of the dielectric substrate Sub4, the metal layer G9 is arranged on the two sides of the dielectric substrate Sub 9, the metal layer G10 is arranged on the two sides of the dielectric substrate Sub5, and the hollow medium substrate Sub5 is arranged on the two sides of the dielectric substrate Sub5, and the hollow medium substrate 5 is formed in the middle area shown in the middle between the two dielectric substrates 2 and the upper and lower side of the dielectric substrate Sub5 is shown in the figure.
Wherein, metal layer G2, metal layer G9 and metallization through-hole equivalently realize electromagnetic shielding effect. The structure topology is that a multi-layer plate structure is adopted, and the self-packaging effect is realized by utilizing different combination forms of metallized through holes. At present, the PCB technology has been widely applied, and has the unique advantages of high density, high reliability, designability and the like. Referring to fig. 1 to 4, the hatched area represents a metal layer, the unshaded circular holes arranged on the metal layer represent metallized through holes, the white area inside the metal layer represents a bare dielectric substrate, and the vertically arranged rectangular white areas in fig. 5, 6, 7, 8 represent metallized through holes.
The parallel strip lines of the medium integrated suspension are distributed in the area between the N-N 'section and the L-L' section (comprising an upper metal layer of the SISPSL and a lower metal layer of the SISPSL, namely a conduction band of the metal layer G5, a G5 transmission line, a conduction band of the metal layer G6 or a G6 transmission line, which are distributed on the upper side and the lower side of the medium substrate in parallel to form a structure of the medium integrated suspension parallel strip lines), the conduction band of the metal layer G5 and the conduction band of the metal layer G6 are parallel to each other, and in the transition process of the medium integrated suspension parallel strip lines to the strip lines, the width is unchanged or is gradually reduced from a structure of narrowing from width to width, and is consistent with the line width of the G5 layer to the strip lines, and the conduction band of the metal layer G6 is gradually increased from a structure of narrowing from width to width.
At the section N-N', the conduction band widths of the metal layer G5 and the metal layer G6 are consistent; at section M-M', the width of the conduction band of metal layer G6 is wider than metal layer G5, as shown in FIGS. 5 and 6.
The conduction band of the metal layer G5 is connected to the intermediate metal layer (metal layer G5) of the strip line at the section L-L ' while passing through the section L-L ', the conduction band of the metal layer G6 is widened, and then connected to the lower metal layer (metal layer G6) of the strip line at the section L-L '. The transmission line transitions from a dielectric integrated suspended parallel strip line to a strip line configuration when passing through section L-L', the strip line cross section being shown in fig. 7.
When passing through the section K-K', the metal layer G5 is connected with the middle metal layer and the two side metal layers (the metal layer G5) of the back-to-ground coplanar waveguide; i.e., the intermediate metal layer of the stripline is connected to the intermediate metal layer of the back-to-ground coplanar waveguide (GCPW); the metal layer G6 is connected to the lower metal layer of the back-to-ground coplanar waveguide (metal layer G6), i.e., the lower metal layer of the strip line is connected to the lower metal layer of the back-to-ground coplanar waveguide. Upon passing through section K-K', the transmission line transitions from a strip line to a structure of a back-to-ground coplanar waveguide, the cross-section of which is shown in fig. 8.
In the embodiment of the invention, the whole transition structure is a symmetrical back-to-back structure, the port 1 and the port 2 are connected with the back-to-ground coplanar waveguide, the back-to-ground coplanar waveguide is connected with the strip line, and the strip line is connected with the medium integrated suspension parallel strip line in the middle part.
In the embodiment of the invention, the N-N 'section is a section perpendicular to the SISPSL at the SISPSL symmetry axis, the M-M' section is a section in the gradual transition process from the SISPSL to the strip line, the M-M 'section is parallel to the N-N' section, the L-L 'section is a section of the SL structure, the L-L' section is parallel to the N-N 'section, the K-K' section is a section of the GCPW structure, and the M-M 'section is parallel to the N-N' section.
Fig. 1 and 2 show top views of wiring patterns of a G5 transmission line and a G6 transmission line of the transition structure, wherein a dielectric integrated suspension parallel strip line is arranged between an N-N ' section and an L-L ' section, a strip line is arranged between an L-L ' section and a K-K ' section, and a back-to-back coplanar waveguide is arranged between the K-K ' section and the boundary of the whole transition structure, as shown in fig. 3 and 4.
Fig. 5, 6, 7 and 8 show schematic cross-sectional views at sections N-N ', M-M', L-L ', K-K' in fig. 1, respectively. In which fig. 5 shows a cross-section at the symmetry axis of the sisbisl. Fig. 6 shows a cross-sectional view of a section of a SISPSL transition to a stripline, where the G6 transmission line is gradually increased in width until it is graded to cover the dielectric substrate. Fig. 7 shows a cross-sectional view of a strip line, and fig. 8 shows a cross-sectional view of a back-to-ground coplanar waveguide.
The transition structure of the embodiment of the invention provides three transition forms, and other transition forms are used as topologies. As shown in fig. 9, the diagonal transition, the G5 transmission line width is constant, and the G6 transmission line is connected to the boundary of the cavity by a triangular structure. As shown in fig. 10, the G5 transmission line width is unchanged at the step transition. The G6 transmission line is connected to the boundary of the cavity by a stepped structure. As shown in fig. 11, the width of the G5 transmission line is unchanged in the arc transition, and the G6 transmission line is connected with the boundary of the cavity through the arc chamfer structure.
Finally, a back-to-back single-ended transition based on a circular arc chamfer structure is simply designed, as shown in fig. 12, a scattering parameter simulation result is obtained by using electromagnetic simulation software, and a frequency bandwidth of more than 40GHz is realized, as shown in fig. 13.
The method for transferring the self-packaging double-sided parallel strip line structure to the GCPW structure by using the natural transition mode of the electromagnetic field is also an expanding method of the invention.
While the fundamental and principal features of the invention and advantages of the invention have been shown and described, it will be apparent to those skilled in the art that the invention is not limited to the details of the foregoing exemplary embodiments, but may be embodied in other specific forms without departing from the spirit or essential characteristics thereof;
the present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
Furthermore, it should be understood that although the present disclosure describes embodiments, not every embodiment is provided with a separate embodiment, and that this description is provided for clarity only, and that the disclosure is not limited to the embodiments described in detail below, and that the embodiments described in the examples may be combined as appropriate to form other embodiments that will be apparent to those skilled in the art.
Claims (4)
1. The broadband transition structure from the dielectric integrated suspension parallel strip line to the back-to-ground coplanar waveguide is characterized by comprising the dielectric integrated suspension parallel strip line, the strip line and the back-to-ground coplanar waveguide; the broadband transition structure is a symmetrical back-to-back structure, two ports which are symmetrically arranged are respectively connected with symmetrically distributed back-to-ground coplanar waveguides, the back-to-ground coplanar waveguides are connected with symmetrically distributed strip lines, and the strip lines are connected with medium integrated suspension parallel strip lines in the middle part;
distributed in the area between the N-N ' section and the L-L ' section is a medium integrated suspension parallel strip line, a G5 transmission line and a G6 transmission line of the medium integrated suspension parallel strip line are arranged in parallel, the width of the G5 transmission line is unchanged or a narrowing gradual change structure is transited from the middle to two side strip line parts, the width of the G6 transmission line is increased, a widening gradual change structure is transited from the middle to two side strip line parts, and the widths of the G5 transmission line and the G6 transmission line are consistent at the section N-N '; the section M-M ' between the N-N ' section and the L-L ' section is provided with a G6 transmission line width ratio G5 transmission line width;
when passing through the section L-L ', the G5 transmission line is connected with the middle metal layer of the strip line at the section L-L ', the G6 transmission line is widened, and then is connected with the lower metal layer of the strip line at the section L-L ';
when the cross section L-L 'is passed, the transmission line is transited to the structure of the strip line by the medium integrated suspension parallel strip line, and when the cross section K-K' is passed, the middle metal layer of the strip line is connected with the middle metal layer of the back-to-ground coplanar waveguide; the lower metal layer of the strip line is connected with the lower metal layer of the back-to-ground coplanar waveguide;
when the section K-K' is passed, the transmission line is transited from the strip line to the back ground coplanar waveguide structure;
the medium integrated suspension parallel strip line is divided into two symmetrical parts, the cross section N-N 'is a cross section vertical to the medium integrated suspension parallel strip line along the symmetry axis, the cross section L-L' coincides with the boundary of an air cavity inside the medium integrated suspension parallel strip line, the cross section M-M 'is positioned between the cross section L-L' and the cross section N-N ', and the cross section K-K' is positioned at the junction of the strip line and the back-to-ground coplanar waveguide.
2. The broadband transition structure from the dielectric integrated suspension parallel strip line to the back ground coplanar waveguide according to claim 1, wherein after the G6 transmission line extends from the symmetry axis N-N' to two sides for a certain distance, the dielectric substrate where the G6 transmission line is located is gradually and symmetrically widened from the middle to two sides in a triangular structure and gradually covered on the dielectric substrate, and is connected with the boundary of the air cavity to form a symmetrical hourglass structure.
3. The broadband transition structure from the dielectric integrated suspension parallel strip line to the back ground coplanar waveguide according to claim 1, wherein after the G6 transmission line extends from the symmetry axis N-N' to two sides for a certain distance, the dielectric substrate where the G6 transmission line is gradually and symmetrically widened from the middle to two sides in a step transition manner and gradually covers the dielectric substrate is connected with the boundary of the air cavity to form a symmetrical step-shaped structure.
4. The broadband transition structure from the dielectric integrated suspension parallel strip line to the back-to-ground coplanar waveguide according to claim 1, wherein after the G6 transmission line extends from the symmetry axis N-N' to two sides for a certain distance, the dielectric substrate where the G6 transmission line is gradually and symmetrically widened from the middle to two sides in a chamfering manner and gradually covers the G6 transmission line is connected with the boundary of the air cavity through an arc chamfer to form a symmetrical chamfer structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210953273.2A CN115425380B (en) | 2022-08-10 | 2022-08-10 | Broadband transition structure of dielectric integrated suspension parallel strip line-back ground coplanar waveguide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210953273.2A CN115425380B (en) | 2022-08-10 | 2022-08-10 | Broadband transition structure of dielectric integrated suspension parallel strip line-back ground coplanar waveguide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115425380A CN115425380A (en) | 2022-12-02 |
| CN115425380B true CN115425380B (en) | 2023-06-16 |
Family
ID=84196428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210953273.2A Active CN115425380B (en) | 2022-08-10 | 2022-08-10 | Broadband transition structure of dielectric integrated suspension parallel strip line-back ground coplanar waveguide |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115425380B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116190955A (en) * | 2022-12-06 | 2023-05-30 | 中国船舶集团有限公司第七二四研究所 | Novel air strip line |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106848520A (en) * | 2017-02-21 | 2017-06-13 | 电子科技大学 | A kind of waveguide cavity configuration based on the integrated suspended substrate stripline of medium |
| CN108987867A (en) * | 2018-08-03 | 2018-12-11 | 中天宽带技术有限公司 | A kind of ultra wide band coaxial line-equivalent strip line plane transition structure |
| CN109346808A (en) * | 2018-10-11 | 2019-02-15 | 西安电子科技大学 | The transmission line structure mixed from encapsulation suspended coplanar waveguide with micro-strip based on multilayer |
| CN110311196A (en) * | 2019-06-18 | 2019-10-08 | 天津大学 | The 5G double-passband filter of suspended substrate stripline is integrated based on medium |
-
2022
- 2022-08-10 CN CN202210953273.2A patent/CN115425380B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106848520A (en) * | 2017-02-21 | 2017-06-13 | 电子科技大学 | A kind of waveguide cavity configuration based on the integrated suspended substrate stripline of medium |
| CN108987867A (en) * | 2018-08-03 | 2018-12-11 | 中天宽带技术有限公司 | A kind of ultra wide band coaxial line-equivalent strip line plane transition structure |
| CN109346808A (en) * | 2018-10-11 | 2019-02-15 | 西安电子科技大学 | The transmission line structure mixed from encapsulation suspended coplanar waveguide with micro-strip based on multilayer |
| CN110311196A (en) * | 2019-06-18 | 2019-10-08 | 天津大学 | The 5G double-passband filter of suspended substrate stripline is integrated based on medium |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115425380A (en) | 2022-12-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20100182105A1 (en) | Impedance-controlled coplanar waveguide system for the three-dimensional distribution of high-bandwidth signals | |
| JP3241019B2 (en) | Coplanar railway track | |
| JP3241139B2 (en) | Film carrier signal transmission line | |
| US7884682B2 (en) | Waveguide to microstrip transducer having a ridge waveguide and an impedance matching box | |
| US5057798A (en) | Space-saving two-sided microwave circuitry for hybrid circuits | |
| US6023210A (en) | Interlayer stripline transition | |
| CN107154524B (en) | Transition structure from dielectric integrated suspension circuit to rectangular waveguide | |
| US7026884B2 (en) | High frequency component | |
| CN109346808B (en) | Transmission line structure based on multilayer self-packaging suspension coplanar waveguide and microstrip mixing | |
| CN106654497B (en) | Minimized wide-band slow wave half module substrate integrated wave guide coupler and its design method | |
| US20020139579A1 (en) | Electrical interconnect having a multi-layer circuit board structure and including a conductive spacer for impedance matching | |
| CN115425380B (en) | Broadband transition structure of dielectric integrated suspension parallel strip line-back ground coplanar waveguide | |
| CN109921164A (en) | The contactless microstrip coupled seam probe transitions circuit of ridge waveguide | |
| JP4671458B2 (en) | Signal line to wave guide transformer | |
| CN117748080A (en) | Circuit-to-waveguide conversion structure | |
| CN112186321A (en) | Ridge-added square coaxial substrate integrated waveguide interconnection device | |
| CN110994112B (en) | Orthogonal directional coupling cross structure and feed network | |
| CN114389002A (en) | SIW filtering power divider loaded with complementary step-folded split ring and design method | |
| Simon et al. | Design of passive components for K-band communication modules in LTCC environment | |
| US6700181B1 (en) | Method and system for broadband transition from IC package to motherboard | |
| CN115395195B (en) | Irregular broadband slot line structure | |
| CN116169451B (en) | Three-dimensional packaged miniaturized power divider | |
| CN115051131B (en) | Broadband transition of dielectric integrated suspension parallel strip line to shielded GCPW differential pair | |
| CN113258236B (en) | Mode composite transmission line based on SIW and FSIW | |
| CN217934179U (en) | Ultra-wideband directional coupler |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |