CN116145092A - Micro-strip ring spacer solder mask layer and preparation method thereof - Google Patents

Micro-strip ring spacer solder mask layer and preparation method thereof Download PDF

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Publication number
CN116145092A
CN116145092A CN202211653275.6A CN202211653275A CN116145092A CN 116145092 A CN116145092 A CN 116145092A CN 202211653275 A CN202211653275 A CN 202211653275A CN 116145092 A CN116145092 A CN 116145092A
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China
Prior art keywords
solder mask
microstrip
layer
mask layer
ferrite
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Pending
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CN202211653275.6A
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Chinese (zh)
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唐冉
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Beijing Institute of Radio Measurement
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Beijing Institute of Radio Measurement
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Priority to CN202211653275.6A priority Critical patent/CN116145092A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/32—Non-reciprocal transmission devices
    • H01P1/36—Isolators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/32—Non-reciprocal transmission devices
    • H01P1/38—Circulators
    • H01P1/383—Junction circulators, e.g. Y-circulators
    • H01P1/387—Strip line circulators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Abstract

The embodiment of the invention discloses a solder mask layer of a microstrip ring spacer and a preparation method thereof, comprising the following steps of S10, coating photoresist with uniform thickness on the front surface of a ferrite microstrip sheet of the microstrip ring spacer, and forming a photoresist layer after thermal curing; s20, exposing and developing the photoresist layer to form a shielding layer in the non-solder mask area; s30, preparing a nickel layer film on the front surface of the ferrite micro-strip sheet obtained in the S20 through a magnetron sputtering process; s40, stripping the shielding layer; s50, oxidizing the nickel layer film to form a nickel oxide solder mask. The nickel oxide solder mask layer is prepared on the surface of the ferrite micro-strip, and the nickel oxide film has good thermal fatigue resistance, higher solder mask effect, high reliability, high shear strength and high corrosion resistance, so that the problems that the tin amount of a ferrite micro-strip surface circuit is difficult to control, and the device performance and the appearance are not satisfactory due to the influence of tin overflow of a through hole in subsequent assembly production are solved.

Description

Micro-strip ring spacer solder mask layer and preparation method thereof
Technical Field
The invention relates to the field of coating films for ferrite microstrip spacers. More particularly, to a solder mask layer of a microstrip spacer and a preparation method thereof.
Background
The ferrite ring separator is used as an important microwave ferrite device, is widely applied to the fields of radar, microwave communication, microwave measurement and the like at present, and plays a role in stabilizing and protecting a microwave transmitting circuit by isolating a reversely transmitted microwave signal while realizing microwave signal transmission and annular reception. Depending on the division of the transmission line form, currently common ring spacers are microstrip ring spacers, strip ring spacers and waveguide ring spacers. The microstrip ring separator is a planar structure device, is easy to integrate circuits, and is widely applied to microwave systems such as phased array radars and the like.
The common microstrip ring spacer adopts a form of a full ferrite substrate, a thin film circuit pattern is sputtered on the ferrite substrate, and the signal is transmitted in a ring mode under the action of an externally-added permanent magnet. Because ferrite material itself is ceramic class material, expansion coefficient is great with the assembly chamber phase difference, need to weld the metal soldering lug at the ring spacer back and improve reliability. In the preparation of a welded metal soldering lug of the ring spacer, a conventional product uses tin-silver-copper or tin-lead solder, a climbing effect is easy to generate when the product is welded, and bottom solder overflows on the surface through the through hole to easily cause bad states such as the surface of a device, so that the performance of the device is reduced, and the qualification rate of the product is greatly reduced. It is therefore necessary to prepare a solder resist layer at the surface via portion. The traditional PCB is completely inapplicable to the annular isolation device by using ink for resistance welding, has low resistance welding precision and poor effect, and is extremely easy to cause pollution and corrosion to a surface circuit, so that the device is scrapped.
Disclosure of Invention
In view of the foregoing, an object of the present invention is to provide a method for preparing a solder mask layer of a microstrip spacer.
The invention further aims to provide the micro-strip ring spacer solder mask layer manufactured by the manufacturing method of the micro-strip ring spacer solder mask layer, so that the problem of tin overflow of the micro-strip ring spacer in a non-welding area is solved.
In order to solve the technical problems, the invention adopts the following technical scheme:
one aspect of the invention provides a method for preparing a solder mask layer of a microstrip spacer, comprising the following steps:
s10, coating photoresist with uniform thickness on the front surface of a ferrite microstrip piece of the microstrip spacer, and forming a photoresist layer after thermal curing;
s20, exposing and developing the photoresist layer to form a shielding layer in the non-solder mask area;
s30, preparing a nickel layer film on the front surface of the ferrite micro-strip sheet obtained in the S20 through a magnetron sputtering process;
s40, stripping the shielding layer;
s50, oxidizing the nickel layer film to form a nickel oxide solder mask.
Furthermore, preferably, the method further comprises, before step S10:
s01, cleaning and removing dust and organic matters on the surface of the ferrite microstrip piece by using a gas ion source.
Furthermore, preferably, the process of S30 is:
s301, placing the ferrite micro-strip sheet obtained in the S20 into a coating workpiece disc of an ion coating machine;
s302, placing a workpiece disc into a sample injection chamber of a coating machine, and pre-vacuumizing;
s303, placing the workpiece disc into a vacuum chamber, opening a high vacuum valve, and pumping high vacuum;
s304, turning on a rotary switch of the workpiece disc, and simultaneously turning on a heating switch to heat the vacuum chamber;
s305, cleaning the rotating frame and the ferrite micro-strip sheet;
s306, preparing a nickel layer film.
Further, in the step S303, the vacuum degree of the vacuum chamber is preferably lower than 0.2Pa.
Further, in the step S304, the vacuum degree of the vacuum chamber is preferably 5X 10-4Pa.
Further, preferably, the step S305 is: and cleaning the rotating frame and the ferrite micro-strip by using a GIS gas ion source, and setting 150W by using a power supply for 10min.
Furthermore, preferably, the method further comprises:
s31, film adhesion detection and film thickness detection are carried out.
Furthermore, preferably, the process of S50 is: and (3) placing the ferrite micro-strip obtained in the step (S40) into a vacuum oven, and introducing oxygen into the vacuum oven to oxidize for 1 hour in the environment of 60 ℃.
In addition, the thickness of the nickel layer film is preferably 0.1-0.2um.
The invention also provides a micro-strip ring spacer solder mask layer, which is manufactured by adopting the manufacturing method of the micro-strip ring spacer solder mask layer, and comprises a nickel oxide film formed in a front solder mask area of a ferrite micro-strip sheet of the micro-strip ring spacer.
The beneficial effects of the invention are as follows:
aiming at the technical problems in the prior art, the embodiment of the application provides a micro-strip ring spacer solder mask layer and a preparation method thereof, and the nickel oxide solder mask layer is prepared on the surface of a ferrite micro-strip sheet, so that the nickel oxide film has good thermal fatigue resistance and higher solder mask effect, high reliability, shearing strength and corrosion resistance, and the problems that the tin amount of a ferrite micro-strip sheet surface circuit is difficult to control in subsequent assembly production, and the performance and appearance of a device are not in compliance due to tin overflow of a through hole are solved. Through a process test, a GIS gas ion source is selected for pre-plating cleaning, the problem that the ultrasonic cavitation effect in ultrasonic cleaning can cause damage to a film layer is solved, the bonding force between a sputtering solder resist film layer and an electroplating film layer is increased, an oven is used for oxidizing a prepared nickel layer film to form a nickel oxide solder resist layer, and the adhesive force of the obtained solder resist layer exceeds 0.5kg/mm 2 The non-uniformity of the film layer is lower than 15%, and the coating qualification rate reaches 99%.
Drawings
The following describes the embodiments of the present invention in further detail with reference to the drawings.
Fig. 1 shows a schematic structure of a microstrip spacer.
Fig. 2 shows a schematic flow chart of a method for preparing a solder mask layer of a microstrip spacer provided by the invention.
Fig. 3 shows an exemplary diagram of a preparation method S10 of a solder mask layer of a microstrip spacer provided by the present invention, in which a front surface of a ferrite microstrip sheet is coated with photoresist.
Fig. 4 is a diagram illustrating an example of forming a shielding layer by the method S20 for preparing a solder mask layer of a microstrip spacer according to the present invention.
Fig. 5 shows an exemplary diagram of a nickel layer film prepared by the preparation method S30 of the microstrip spacer solder mask layer provided by the invention.
Fig. 6 shows an exemplary diagram of the preparation method S40 of the microstrip spacer solder mask layer provided by the present invention after the shielding layer is peeled off.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless it is specifically stated otherwise.
The following description of at least one exemplary embodiment is merely exemplary in nature and is in no way intended to limit the invention, its application, or uses.
Techniques and equipment known to those of ordinary skill in the relevant art may not be discussed in detail, but should be considered part of the specification where appropriate.
In all examples shown and discussed herein, any specific values should be construed as merely illustrative, and not a limitation. Thus, other examples of exemplary embodiments may have different values.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further discussion thereof is necessary in subsequent figures.
As shown in fig. 1, the microstrip ring spacer is composed of magnetic steel 1, a dielectric sheet 2, a ferrite microstrip sheet 3, a solder sheet 4 and a metal carrier 5 from top to bottom, and because the ferrite material is a ceramic material, the expansion coefficient is relatively large compared with the assembly cavity, and the reliability is improved by welding a metal soldering lug on the back of the ring spacer. The ring separator with the via hole generally uses tin-silver-copper or tin-lead solder when welding a metal soldering lug, the climbing effect is easy to generate when welding a product, the bottom solder overflows on the surface through the via hole to easily cause bad states such as the surface of a device, the performance of the device is reduced, and the qualification rate of the product is greatly reduced.
In order to solve the defects in the prior art, the invention provides a preparation method of a solder mask layer of a microstrip ring spacer, which is shown in combination with figures 1-6, and specifically comprises the following steps:
s10, as shown in FIG. 3, coating photoresist with uniform thickness on the front surface of a ferrite microstrip piece 3 of the microstrip spacer by using a photoresist homogenizer, and forming a photoresist layer 6 after thermal curing;
s20, as shown in FIG. 4, exposing and developing the photoresist layer 6 by using a hot plate, an exposure machine and a developing machine to form a negative photoresist layer pattern, wherein the negative photoresist layer pattern shields all areas except the solder resist area, namely a shielding layer 7 is formed in the non-solder resist area;
s30, as shown in FIG. 5, preparing a nickel layer film 8 on the front surface of the ferrite micro-strip sheet obtained in the step S20 through a magnetron sputtering process, wherein the nickel layer film 8 covers a welding-resistant area and a shielding layer 7 of a non-welding-resistant area;
s40, photoresist stripping treatment is carried out on the shielding layer 7, the shielding layer 7 and the nickel layer film 8 covering the shielding layer 7 are stripped, and the preparation of the nickel layer film 8 in the solder mask area is completed, as shown in FIG. 6;
and S50, oxidizing the nickel layer film 8 in the solder mask area to form a nickel oxide solder mask layer.
In a specific embodiment, before step S10 is performed, the surface of the ferrite micro-strip needs to be cleaned to remove dust and organic matters on the surface of the ferrite micro-strip. In the embodiment, a GIS gas ion source in an ion plating machine is used for cleaning the rotating frame and the ferrite micro-strip, a power supply is used for setting 150W, the grounding is opened, and the cleaning time is 10min. After cleaning, a negative glue layer pattern is prepared on the sputtering film layer of the ferrite micro-strip by using a spin coater, a hot plate, an exposure machine and a developing machine, and the pattern shields all areas outside the solder resist area.
In one ofIn a specific embodiment, the process of step S30 is: and preparing the nickel layer film by using an ion plating machine. Firstly, loading the ferrite micro-strip with the shielding layer 7 obtained in the step S20 into a coated workpiece disc, and rotating the workpiece disc to check whether the workpiece disc rotates freely; and then placing the workpiece disc into a sample injection chamber, and pre-vacuumizing. And when the vacuum of the sample injection chamber is lower than 0.2Pa, feeding the workpiece disc into the main chamber. Opening a high vacuum valve (the pre-vacuum time of the cryopump is more than 180 minutes at the moment) to pump high vacuum; when the vacuum degree of the system reaches 5 multiplied by 10 -4 And when Pa, a workpiece disc rotating power switch is turned on, the workpiece rotates, and a heating switch is turned on to heat the vacuum chamber, wherein a step heating process is adopted for heating.
In the embodiment, before coating, a GIS gas ion source is used for cleaning the turret ferrite microstrip sheet, a power supply is used for setting 150w, the grounding is opened, and the cleaning time is 10min. And (5) preparing the nickel layer film after cleaning. And after the film coating is finished, cooling to room temperature by adopting a stepped cooling process.
In this embodiment, the thickness of the nickel layer film is 0.1-0.2um.
In one embodiment, the accompanying sheet is subjected to film adhesion detection and film thickness detection after being discharged from the furnace.
In a specific embodiment, the process of step S50 is: and (3) placing the ferrite micro-strip into a vacuum oven, introducing oxygen into the vacuum oven, heating at 60 ℃ for one hour, and performing oxidation treatment to finally form the nickel oxide solder mask with high consistency.
Another embodiment of the invention provides a micro-strip ring spacer solder mask layer, which is manufactured by adopting the manufacturing method of the micro-strip ring spacer solder mask layer, and a nickel oxide film is manufactured in a solder mask area of a ferrite micro-strip sheet, so that the nickel oxide film has good thermal fatigue resistance and higher solder mask effect, high reliability, high shearing strength and high corrosion resistance, and the problem of tin overflow of the micro-strip ring spacer in a non-welding area is solved.
The embodiment of the invention provides a micro-strip ring spacer solder mask layer and a preparation method thereof, wherein a nickel oxide solder mask layer is prepared on the surface of a ferrite micro-strip sheet, and a nickel oxide film has good thermal fatigue resistanceThe method has the advantages of high labor property, high solder resistance effect, high reliability, high shearing strength and high corrosion resistance, and solves the problems that the tin amount of the ferrite microstrip surface circuit is difficult to control, and the through hole tin overflow affects the performance and the appearance of the device and does not meet the requirements in the subsequent assembly production. Through a process test, a GIS gas ion source is selected for pre-plating cleaning, the problem that the ultrasonic cavitation effect in ultrasonic cleaning can cause damage to a film layer is solved, the bonding force between a sputtering solder resist film layer and an electroplating film layer is increased, an oven is used for oxidizing a prepared nickel layer film to form a nickel oxide solder resist layer, and the adhesive force of the obtained solder resist layer exceeds 0.5kg/mm 2 The non-uniformity of the film layer is lower than 15%, and the coating qualification rate reaches 99%.
It should be understood that the foregoing examples of the present invention are provided merely for clearly illustrating the present invention and are not intended to limit the embodiments of the present invention, and that various other changes and modifications may be made therein by one skilled in the art without departing from the spirit and scope of the present invention as defined by the appended claims.

Claims (10)

1. The preparation method of the solder mask layer of the microstrip ring spacer is characterized by comprising the following steps of:
s10, coating photoresist with uniform thickness on the front surface of a ferrite microstrip piece of the microstrip spacer, and forming a photoresist layer after thermal curing;
s20, exposing and developing the photoresist layer to form a shielding layer in the non-solder mask area;
s30, preparing a nickel layer film on the front surface of the ferrite micro-strip sheet obtained in the S20 through a magnetron sputtering process;
s40, stripping the shielding layer;
s50, oxidizing the nickel layer film to form a nickel oxide solder mask.
2. The method for preparing a solder mask layer of a microstrip spacer according to claim 1, further comprising, before step S10:
s01, cleaning and removing dust and organic matters on the surface of the ferrite microstrip piece by using a gas ion source.
3. The method for preparing a solder mask layer of a microstrip spacer according to claim 1, wherein the step S30 is as follows:
s301, placing the ferrite micro-strip sheet obtained in the S20 into a coating workpiece disc of an ion coating machine;
s302, placing a workpiece disc into a sample injection chamber of a coating machine, and pre-vacuumizing;
s303, placing the workpiece disc into a vacuum chamber, opening a high vacuum valve, and pumping high vacuum;
s304, turning on a rotary switch of the workpiece disc, and simultaneously turning on a heating switch to heat the vacuum chamber;
s305, cleaning the rotating frame and the ferrite micro-strip sheet;
s306, preparing a nickel layer film.
4. The method for preparing a solder mask layer for a microstrip spacer according to claim 3, wherein in S303, the vacuum degree of the vacuum chamber is lower than 0.2Pa.
5. The method for preparing a solder mask layer for a microstrip spacer according to claim 3, wherein in S304, the vacuum degree of the vacuum chamber is 5×10 -4 Pa。
6. The method for preparing a solder mask layer of a microstrip spacer according to claim 3, wherein the step S305 is as follows: and cleaning the rotating frame and the ferrite micro-strip by using a GIS gas ion source, and setting 150W by using a power supply for 10min.
7. The method for preparing a solder mask layer of a microstrip spacer according to claim 1, further comprising:
s31, film adhesion detection and film thickness detection are carried out.
8. The method for preparing a solder mask layer of a microstrip spacer according to claim 1, wherein the step S50 is as follows: and (3) placing the ferrite micro-strip obtained in the step (S40) into a vacuum oven, and introducing oxygen into the vacuum oven to oxidize for 1 hour in the environment of 60 ℃.
9. The method for preparing a solder mask layer of a microstrip spacer according to claim 1, wherein the thickness of the nickel layer film is 0.1-0.2um.
10. The microstrip ring spacer solder mask layer is characterized by being manufactured by adopting the preparation method of the microstrip ring spacer solder mask layer according to any one of claims 1-9, and comprises a nickel oxide film formed in a front solder mask area of a ferrite microstrip piece of the microstrip ring spacer.
CN202211653275.6A 2022-12-21 2022-12-21 Micro-strip ring spacer solder mask layer and preparation method thereof Pending CN116145092A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211653275.6A CN116145092A (en) 2022-12-21 2022-12-21 Micro-strip ring spacer solder mask layer and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211653275.6A CN116145092A (en) 2022-12-21 2022-12-21 Micro-strip ring spacer solder mask layer and preparation method thereof

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Publication Number Publication Date
CN116145092A true CN116145092A (en) 2023-05-23

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Country Status (1)

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