CN113097684A - Method for manufacturing microwave ferrite isolator substrate - Google Patents
Method for manufacturing microwave ferrite isolator substrate Download PDFInfo
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- CN113097684A CN113097684A CN202110288883.0A CN202110288883A CN113097684A CN 113097684 A CN113097684 A CN 113097684A CN 202110288883 A CN202110288883 A CN 202110288883A CN 113097684 A CN113097684 A CN 113097684A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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Abstract
The invention discloses a method for manufacturing a microwave ferrite isolator substrate, which comprises the following steps: depositing the magnetron sputtering nickel-chromium-iron alloy target on the surface of the ferrite substrate to form a bottom layer composite film. The invention completes the deposition of the nickel-chromium-iron composite film on the ferrite substrate in a magnetron sputtering mode by customizing the nickel-chromium-iron alloy target material with a specific proportion, the composite film can realize one-time mixed etching with a copper plating layer, and compared with the conventional chromium or nickel-chromium bottoming etching mode, the invention omits a plasma etching process, simplifies the production steps of the ferrite isolator substrate and improves the processing efficiency of the ferrite isolator substrate.
Description
Technical Field
The invention belongs to the technical field of microwave device manufacturing, and particularly relates to a manufacturing method of a microwave ferrite isolator substrate.
Background
The isolator is also called a isolator, and the design function of the isolator in a microwave circuit is to realize the unidirectional transmission of microwave power. An ideal isolator fully absorbs microwave power in one direction and transmits microwave power in the opposite direction without loss. By utilizing Faraday rotation effect of the rotation of the polarization plane when electromagnetic waves are transmitted in a gyromagnetic ferrite material with an external direct-current magnetic field, through proper design, the ferrite isolator can ensure that the attenuation of microwaves is very small during forward transmission and almost completely absorbed during reverse transmission.
Isolators have a number of primary applications: the application frequency range is wide, and the film microwave load can normally work under high-frequency signals; the resistance stability is good: in a longer working time, the resistance change of the film load is small; the chemical stability is good: can be normally used in various complex environments; the power density is high: a larger power can be absorbed. Tantalum nitride materials have become the most widely used power thin film materials due to their good properties. The thin film microwave load made based on the ferrite substrate is equivalent to sacrifice of the power density requirement of the microwave load, and the miniaturization and integration degree of the device are increased. The most important application of ferrite-based tantalum nitride film microwave loads is to connect a load in one port of a three-port circulator, thereby forming a two-port isolator. The isolator can realize the signal isolation function, and the tantalum nitride film microwave load plays a key role in the isolator. The isolator and the circulator solve a series of technical problems of interstage isolation, impedance, antenna sharing and the like of radar equipment, the tactical performance of a radar system is improved, the isolator and the circulator are indispensable key units in a TR component, and the preparation of a ferrite thin film circuit substrate is a very important link in the manufacturing of the isolator and the circulator.
However, in the prior art, chromium or nickel-chromium is used as a metallization priming layer, chromium removal is difficult in a post-process, for example, a wet process can cause severe line side etching, for example, dry etching can be used to etch both a gold-plated layer and tantalum nitride, and a dry etching process needs to be added after the wet etching process, so that the manufacturing process is lengthened, and the manufacturing cost is increased.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a method for manufacturing a microwave ferrite isolator substrate, so as to simplify the manufacturing process of the microwave ferrite isolator substrate and improve the production efficiency of the microwave ferrite isolator substrate.
In order to solve the above problems, the present invention provides a method for manufacturing a microwave ferrite isolator substrate, comprising:
depositing the magnetron sputtering nickel-chromium-iron alloy target on the surface of the ferrite substrate to form a bottom layer composite film.
Further, before the step of forming a bottom layer composite film on the surface of the ferrite substrate by depositing the magnetron sputtering nickel-chromium-iron alloy target material, the method comprises the following steps:
manufacturing a nickel-chromium-iron alloy target according to the mass ratio of Ni to Cr to Fe =67 to 21 to 12;
cutting the ferrite embryo into ferrite substrates with corresponding thicknesses in an inner circle cutting mode, then carrying out precision polishing processing on the ferrite substrates through diamond grinding materials, then carrying out water polishing by taking pure water as a medium and adopting sweep-frequency multi-frequency ultrasonic cleaning;
and depositing an isolation resistance tantalum nitride film on the surface of the ferrite substrate by magnetron sputtering of the tantalum nitride target to form the isolation resistance with the square resistance value of 48-50 omega/sq.
Further, when the magnetron sputtering tantalum nitride target deposits the isolation resistance tantalum nitride film on the surface of the ferrite substrate, the method comprises the following steps:
tantalum nitride circles Pad with the diameter of 0.5mm and the roundness of 100% are generated at four corners of the ferrite substrate to be used as positioning, and then laser repeated processing is carried out on the front surface of the ferrite substrate for multiple times to form through holes with the diameter of 0.2mm and the depth of 0.4 mm.
Further, the magnetron sputtering tantalum nitride target material is used for depositing a magnetron in the isolation resistance tantalum nitride film on the surface of the ferrite substrateThe parameters of the sputtering process are as follows: n is a radical of2Ar =2:50, sputtering power 300W, sputtering time 15min, and obtaining the isolation resistor with the square resistance value of 48-50 omega/sq.
Further, the magnetron sputtering technological parameters of forming the composite film by depositing the magnetron sputtering nickel-chromium-iron alloy target on the surface of the ferrite substrate are as follows: at 6.0X 10-4Under the Pa vacuum degree, the ferrite substrate is preheated to 180 ℃, the argon flow is controlled to be 35SCCM, and the sputtering power of the target material is controlled to be 300W.
Further, after the step of forming a bottom layer composite film on the surface of the ferrite substrate by depositing the magnetron sputtering nickel-chromium-iron alloy target material, the method comprises the following steps:
and magnetron sputtering the copper target material, forming a layer of copper film on the bottom layer composite film of the ferrite substrate, and then electroplating copper on the ferrite substrate to thicken the copper film to the thickness required by the isolator substrate.
Further, magnetron sputtering copper target material forms a layer of copper film on the bottom layer composite film of the ferrite substrate, then carries out electro-coppering on the ferrite substrate, so that after the copper film is thickened to the thickness required by the isolator substrate, the method comprises the following steps:
pattern transfer, acid etching, thick gold electroplating, and forming.
Further, the pattern transfer includes: and carrying out photoetching pattern transfer on the ferrite substrate with the copper film thickened to the required thickness, adjusting the glue dripping amount and the rotating speed of the photoresist in a static glue dripping and high-speed rotating dispersion mode, and carrying out dynamic etching compensation design on the pattern.
Further, the acid etching includes: and (3) performing vacuum etching on the area which is not protected by the photoresist by using a wet etching process in a chemical corrosion mode, and etching the copper layer and simultaneously etching the composite film of the bottom layer.
Further, the thick gold electroplating manufacturing comprises the following steps: after the circuit is etched, the lead wires are distributed among the circuits to manufacture a conductive grid, five surfaces of the circuits are covered with gold, and then the gold-plated lead wires are removed in a laser etching mode.
Compared with the prior art, the invention has the following beneficial effects:
1. according to the method, when the tantalum nitride isolation resistor is processed by a photoresist mask method and pattern sputtering, the tantalum nitride circles Pad are generated at four corners of the ferrite substrate for positioning, so that low-power laser is output, the front side of the ferrite substrate can be repeatedly processed for multiple times to form the through hole so as to replace the conventional one-time laser drilling, and the yield reduction and quality risk caused by slag at the hole opening of the through hole can be effectively avoided.
2. According to the invention, the bottom-layer composite film is formed on the ferrite substrate through magnetron sputtering deposition, because the iron element is added into the bottom-layer nickel-chromium alloy, the chemical corrosion resistance of the alloy is reduced, the composite film of the bottom layer can be corroded while the copper layer is etched, so that the copper-plated layer is subjected to one-step mixed etching, and the plasma etching is not needed after the acid etching like pure chromium or nickel-chromium etching, so that the production process of the ferrite isolator substrate is simplified, and the processing efficiency of the ferrite isolator substrate is improved.
3. The adhesion force of the nickel-chromium-iron is between that of chromium and nickel-chromium, and is superior to that of nickel-chromium and titanium-tungsten, and the adhesion force completely meets the requirements of the microstrip isolator.
Drawings
FIG. 1 is a flow chart of the manufacturing process of the microwave ferrite isolator substrate of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The embodiment of the invention provides a method for manufacturing a microwave ferrite isolator substrate, which comprises the following steps:
s1, preparing a nickel-chromium-iron alloy target, preparing a nickel, chromium and iron alloy target according to a specific mass ratio, and obtaining the target with the purity: 99.5 percent.
The nickel-chromium-iron alloy target is composed of Ni, Cr, Fe =67, 21 and 12 in mass ratio and is used for sputtering a nickel-chromium-iron composite film priming coat.
S2, cutting ferrite and performing surface treatment, namely cutting ferrite embryos into slices with corresponding thicknesses in an inner circle cutting mode to obtain ferrite substrates, performing precision polishing processing on the ferrite substrates by diamond grinding materials, adding a water polishing process taking pure water as a medium, and removing a polishing agent by adopting sweep-frequency multi-frequency ultrasonic cleaning.
S3, manufacturing tantalum nitride, wherein the isolation resistance tantalum nitride film is an isolation resistance with the square resistance value of 48-50 omega/sq obtained through magnetron sputtering.
The isolation resistance tantalum nitride film is manufactured by magnetron sputtering, and verified that the optimal technological parameter of tantalum nitride sputtering is N2Ar =2:50, sputtering power: 300W, sputtering time: and obtaining the isolation resistor with the square resistance value of 48-50 omega/sq after 15 min.
S4, ferrite punching, namely, manufacturing a positioning PAD when tantalum nitride is processed by a photoresist mask method and pattern sputtering, and repeatedly processing by laser from the front of the ferrite substrate for many times to form a through hole, wherein the through hole is specifically related to a through hole with the diameter of 0.2mm and the depth of 0.4 mm.
Ferrite punching manufacturing, when utilizing photoresist mask method figure sputtering to process tantalum nitride isolation resistor, generate the tantalum nitride circle Pad of diameter 0.5mm, true circularity reaches 100% simultaneously in four corners of ferrite substrate as the location, output low power laser, from the positive repeated machining many times of ferrite substrate, form the through-hole of diameter 0.2mm degree of depth 0.4mm specifically, present laser drilling can be replaced to this flow, yield and quality risk that can effectively avoid through-hole drill way cinder to bring.
S5, sputtering nickel-chromium-iron and copper, and preparing a nickel, chromium and iron alloy target material according to a specific proportion, wherein the adhesion force of the nickel-chromium-iron is between that of chromium and nickel-chromium and better than that of nickel-chromium and titanium-tungsten through measurement of a magnetron sputtering composite film on a ferrite substrate, the adhesion force completely meets the requirement of a microstrip isolator substrate, and then the copper is magnetron sputtered and plated to be thickened to the requirement of the isolator substrate.
The technological parameters of the magnetron sputtering composite film on the ferrite substrate are as follows: at 6.0X 10-4Preheating the ferrite substrate to 180 ℃ under the Pa vacuum degree, controlling the argon flow to 35SCCM (partial pressure of 0.21 Pa), controlling the sputtering power of the target to 300WAllochrome-copper, nickel-chrome-iron-copper, and titanium-tungsten-copper.
A copper bar with the diameter of 2mm is vertically welded on the sputtering surface of the ferrite, a clamp is designed and fixed on a tensile force testing machine, then the tensile force for separating the sputtering film layer and the ferrite substrate is measured, and the adhesive force of the film layer is calculated according to the welding area. The measurement shows that the adhesion force of the nickel-chromium-iron is between that of chromium and nickel-chromium, and is superior to that of nickel-chromium and titanium-tungsten, and the adhesion force completely meets the requirement of the microstrip isolator.
And S6, transferring the pattern, wherein the glue is applied in a static glue dripping and high-speed rotating dispersion mode, and the pattern is subjected to dynamic etching compensation design by adjusting the glue dripping amount and the rotating speed.
And pattern transfer, namely photoetching pattern transfer is carried out on the ferrite substrate with the copper film thickened to the required thickness, static glue dripping and high-speed rotation dispersion are adopted for gluing, dynamic etching compensation is carried out on the pattern by adjusting the glue dripping amount and the rotating speed, and by taking the copper thickness of 4-6um as an example, a positive design square frame (2 um x 2 um) and a negative design triangle (1.5 um x 1.5 um) are adopted in line compensation.
And S7, acid etching, namely performing vacuum etching on the area which is not protected by the photoresist by using a wet etching process and a chemical corrosion mode to realize high-precision line etching. Because the iron element is added into the nickel-chromium alloy of the bottom layer, the chemical corrosion resistance of the alloy is reduced, and the composite film of the bottom layer is corroded while the copper layer is etched.
And S8, thick gold electroplating, manufacturing a conductive grid by distributing leads (with the width of 0.1 mm) between the circuits after the circuits are etched, realizing a five-surface gold edge covering mode of the circuits, and removing the gold-plated leads in a laser etching mode.
And S9, molding and manufacturing, namely cutting the ferrite micro-strip isolator substrate finished product by adopting a high-speed resin cutter for scribing and cutting, and cutting the ferrite substrate by adopting a blade with the granularity of 0.15mm and the granularity of diamond of 400 meshes at the main shaft rotating speed of 26000 rpm.
The working principle of the invention is as follows: when the ferrite punching manufacture utilizes a photoresist mask method to process the tantalum nitride isolation resistor in a pattern sputtering mode, tantalum nitride circles Pad with the diameter of 0.5mm and the roundness of 100% are generated at four corners of the ferrite substrate to serve as positioning, low-power laser is output, the ferrite substrate is repeatedly processed for multiple times from the front side to form through holes with the diameter of 0.2mm and the depth of 0.4mm, the current laser drilling is replaced by the process, and yield reduction and quality risks caused by through hole opening slag can be effectively avoided.
The technological parameters of the magnetron sputtering composite film on the ferrite substrate are as follows: at 6.0X 10-4Under the Pa vacuum degree, the ferrite substrate is preheated to 180 ℃, the argon flow is controlled to 35SCCM (partial pressure is 0.21 Pa), the sputtering power of the target is controlled to 300W, and chromium-copper, nickel-chromium-iron-copper and titanium-tungsten-copper are respectively formed. A copper bar with the diameter of 2mm is vertically welded on the sputtering surface of the ferrite, a clamp is designed and fixed on a tensile force testing machine, then the tensile force for separating the sputtering film layer and the ferrite substrate is measured, and the adhesive force of the film layer is calculated according to the welding area. The measurement shows that the adhesion force of the nickel-chromium-iron is between that of chromium and nickel-chromium, and is superior to that of nickel-chromium and titanium-tungsten, and the adhesion force completely meets the requirement of the microstrip isolator.
The above detailed description of the embodiments of the present invention is provided as an example, and the present invention is not limited to the above described embodiments. It will be apparent to those skilled in the art that any equivalent modifications or substitutions can be made within the scope of the present invention, and thus, equivalent changes and modifications, improvements, etc. made without departing from the spirit and scope of the present invention should be included in the scope of the present invention.
Claims (10)
1. A method for manufacturing a microwave ferrite isolator substrate is characterized by comprising the following steps:
depositing the magnetron sputtering nickel-chromium-iron alloy target on the surface of the ferrite substrate to form a bottom layer composite film.
2. The method for manufacturing a microwave ferrite isolator substrate according to claim 1, wherein before the step of forming a primer composite film on the surface of the ferrite substrate by deposition of the magnetron sputtering nickel-chromium-iron alloy target material, the method comprises the following steps:
manufacturing a nickel-chromium-iron alloy target according to the mass ratio of Ni to Cr to Fe =67 to 21 to 12;
cutting the ferrite embryo into ferrite substrates with corresponding thicknesses in an inner circle cutting mode, then carrying out precision polishing processing on the ferrite substrates through diamond grinding materials, then carrying out water polishing by taking pure water as a medium and adopting sweep-frequency multi-frequency ultrasonic cleaning;
and depositing an isolation resistance tantalum nitride film on the surface of the ferrite substrate by magnetron sputtering of the tantalum nitride target to form the isolation resistance with the square resistance value of 48-50 omega/sq.
3. The method for manufacturing a microwave ferrite isolator substrate according to claim 2, wherein while the magnetron sputtering tantalum nitride target deposits an isolation resistance tantalum nitride film on the surface of the ferrite substrate, the method comprises the following steps:
tantalum nitride circles Pad with the diameter of 0.5mm and the roundness of 100% are generated at four corners of the ferrite substrate to be used as positioning, and then laser repeated processing is carried out on the front surface of the ferrite substrate for multiple times to form through holes with the diameter of 0.2mm and the depth of 0.4 mm.
4. The method for manufacturing the microwave ferrite isolator substrate according to claim 2, wherein the magnetron sputtering technological parameters of the magnetron sputtering tantalum nitride target material in the deposition of the isolation resistance tantalum nitride film on the surface of the ferrite substrate are as follows: n is a radical of2Ar =2:50, sputtering power 300W, sputtering time 15min, and obtaining the isolation resistor with the square resistance value of 48-50 omega/sq.
5. The method for manufacturing the microwave ferrite isolator substrate according to claim 1, wherein the magnetron sputtering technological parameters for forming the composite film by depositing the magnetron sputtering nickel-chromium-iron alloy target on the surface of the ferrite substrate are as follows: at 6.0X 10-4Under the Pa vacuum degree, the ferrite substrate is preheated to 180 ℃, the argon flow is controlled to be 35SCCM, and the sputtering power of the target material is controlled to be 300W.
6. The method for manufacturing a microwave ferrite isolator substrate according to claim 1, wherein after the step of forming a primer composite film on the surface of the ferrite substrate by deposition of the magnetron sputtering nickel-chromium-iron alloy target material, the method comprises the following steps:
and magnetron sputtering the copper target material, forming a layer of copper film on the bottom layer composite film of the ferrite substrate, and then electroplating copper on the ferrite substrate to thicken the copper film to the thickness required by the isolator substrate.
7. The method for manufacturing a microwave ferrite isolator substrate according to claim 6, wherein magnetron sputtering a copper target material to form a copper film on a composite film of a bottom layer of a ferrite substrate, and then performing copper electroplating on the ferrite substrate to thicken the copper film to a thickness required by the isolator substrate comprises:
pattern transfer, acid etching, thick gold electroplating, and forming.
8. The method of claim 7, wherein the step of forming the substrate comprises forming a first metal layer on the substrate,
the pattern transfer includes: and carrying out photoetching pattern transfer on the ferrite substrate with the copper film thickened to the required thickness, adjusting the glue dripping amount and the rotating speed of the photoresist in a static glue dripping and high-speed rotating dispersion mode, and carrying out dynamic etching compensation design on the pattern.
9. The method of claim 8, wherein the step of forming the substrate comprises forming a ferrite spacer having a first surface and a second surface,
the acid etching includes: and (3) performing vacuum etching on the area which is not protected by the photoresist by using a wet etching process in a chemical corrosion mode, and etching the copper layer and simultaneously etching the composite film of the bottom layer.
10. The method of claim 9, wherein the electroplating thick gold comprises: after the lines are etched, the conducting grids are manufactured by using the lead wires designed between the lines, five surfaces of the lines are covered with gold, and then the gold-plated lead wires are removed in a laser etching mode.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113904079A (en) * | 2021-10-09 | 2022-01-07 | 苏州市新诚氏通讯电子股份有限公司 | Film microwave coupling piece load based on ferrite |
| CN113930733A (en) * | 2021-09-14 | 2022-01-14 | 赛创电气（铜陵）有限公司 | Magnetron sputtering method for ferrite processing |
| CN116093573A (en) * | 2022-12-14 | 2023-05-09 | 北京航天微电科技有限公司 | Microstrip circuit preparation method and microstrip ring spacer |
| CN118073208A (en) * | 2024-04-16 | 2024-05-24 | 四川九洲电器集团有限责任公司 | Miniaturized preparation method of microwave power amplifier and microwave power amplifier |
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2021
- 2021-03-18 CN CN202110288883.0A patent/CN113097684A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113930733A (en) * | 2021-09-14 | 2022-01-14 | 赛创电气（铜陵）有限公司 | Magnetron sputtering method for ferrite processing |
| CN113930733B (en) * | 2021-09-14 | 2023-12-15 | 国瓷赛创电气(铜陵)有限公司 | Magnetron sputtering method for ferrite processing |
| CN113904079A (en) * | 2021-10-09 | 2022-01-07 | 苏州市新诚氏通讯电子股份有限公司 | Film microwave coupling piece load based on ferrite |
| CN116093573A (en) * | 2022-12-14 | 2023-05-09 | 北京航天微电科技有限公司 | Microstrip circuit preparation method and microstrip ring spacer |
| CN118073208A (en) * | 2024-04-16 | 2024-05-24 | 四川九洲电器集团有限责任公司 | Miniaturized preparation method of microwave power amplifier and microwave power amplifier |
| CN118073208B (en) * | 2024-04-16 | 2024-07-19 | 四川九洲电器集团有限责任公司 | Miniaturized preparation method of microwave power amplifier and microwave power amplifier |
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