CN116093573A - Microstrip circuit preparation method and microstrip ring spacer - Google Patents
Microstrip circuit preparation method and microstrip ring spacer Download PDFInfo
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- CN116093573A CN116093573A CN202211608571.4A CN202211608571A CN116093573A CN 116093573 A CN116093573 A CN 116093573A CN 202211608571 A CN202211608571 A CN 202211608571A CN 116093573 A CN116093573 A CN 116093573A
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- microstrip circuit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/32—Non-reciprocal transmission devices
Abstract
The invention provides a microstrip circuit preparation method and a microstrip ring spacer. A method of manufacturing a microstrip circuit comprising: s1, preparing a titanium tungsten layer and a copper layer on ferrite through magnetron sputtering; s2, electroplating to thicken the copper layer, and preparing a bond alloy layer; and S3, preparing a pattern through a photoetching process to obtain the microstrip circuit. And preparing a seed layer film by using magnetron sputtering, then sputtering a low-cost conductive layer to replace a traditional gold layer, preparing an outermost gold layer by using an electroplating process, and finally preparing a microstrip circuit pattern by using a photoetching process. The method for preparing the copper layer by using the magnetron sputtering method replaces the process of sputtering gold on the surface of ferrite by optimizing the microstrip circuit film system and the plating process flow, solves the problem of high cost of sputtering gold targets in the mass production process, and reduces the cost.
Description
Technical Field
The invention relates to the technical field of ring spacers, in particular to a microstrip circuit preparation method and a microstrip ring spacer.
Background
The ferrite ring separator is used as an important microwave ferrite device, is widely applied to the fields of radar, microwave communication, microwave measurement and the like at present, and plays a role in stabilizing and protecting a microwave transmitting circuit by isolating a reversely transmitted microwave signal while realizing microwave signal transmission and annular reception. Depending on the division of the transmission line form, currently common ring spacers are microstrip ring spacers, strip ring spacers and waveguide ring spacers. The microstrip ring separator is a planar structure device, is easy to integrate circuits, and is widely applied to microwave systems such as phased array radars and the like.
The common microstrip ring spacer adopts a form of a full ferrite substrate, a thin film circuit pattern is sputtered on the ferrite substrate, and the signal is transmitted in a ring mode under the action of an externally-added permanent magnet. Aiming at the requirements and characteristics of a thin film circuit in a microstrip device, a magnetron sputtering system is used for plating a high-precision thin film in a magnetron sputtering mode. The realization of the high-reliability circuit adopts a thin film sputtering technology approach. The sputtering film is grown in three ways: 1. growing in an island shape; 2. growing in a layered manner; 3. layered growth is performed first and then island growth is performed. If the film grows in an island-like manner and the film thickness is too thin, the islands are not well connected to each other, thereby creating voids. The magnetron sputtering film growing mode belongs to the second layered growth mode. Magnetron sputtering can obtain a film with small roughness, but the growth and merging of crystal grains can occur after the surface is continuous. When the thickness is reached, the surface of the film layer has larger grains, so that the resistivity of the film layer is further reduced, and the surface roughness of the obtained film is large. So that the bonding force between the electroplated layer and the sputtered film layer can be improved, but the cost is higher.
Disclosure of Invention
The invention aims to solve the technical problem of providing a microstrip circuit preparation method and a microstrip ring isolator aiming at the defects of the prior art.
The technical scheme for solving the technical problems is as follows: a method of manufacturing a microstrip circuit comprising:
s1, preparing a titanium tungsten layer and a copper layer on ferrite through magnetron sputtering;
s2, electroplating to thicken the copper layer, and preparing a bond alloy layer;
and S3, preparing a pattern through a photoetching process to obtain the microstrip circuit.
The technical scheme of the invention has the beneficial effects that: and preparing a seed layer film by using magnetron sputtering, then sputtering a low-cost conductive layer to replace a traditional gold layer, preparing an outermost gold layer by using an electroplating process, and finally preparing a microstrip circuit pattern by using a photoetching process. The method for preparing the copper layer by using the magnetron sputtering method replaces the process of sputtering gold on the surface of ferrite by optimizing the microstrip circuit film system and the plating process flow, solves the problem of high cost of sputtering gold targets in the mass production process, and reduces the cost.
Further, the step S1 includes: the ferrite is cleaned by a gas ion source.
The beneficial effects of adopting the further technical scheme are as follows: before plating, gas ion source is used for cleaning and removing dust and organic matters on the surface of ferrite, so that the dust and the organic matters on the surface of ferrite are prevented from affecting the performance of the microstrip circuit, and the stability and the reliability of the microstrip circuit are improved.
Further, the gas ion source is the gas ion source of the ion plating machine, and the cleaning time is 10min.
The beneficial effects of adopting the further technical scheme are as follows: the cleanliness of ferrite is improved, and the stability and reliability of the microstrip circuit are improved.
Further, the thickness of the titanium tungsten layer prepared by magnetron sputtering ranges from 0.1 to 0.2um, and the thickness of the copper layer prepared by magnetron sputtering ranges from 1 to 1.5um.
The beneficial effects of adopting the further technical scheme are as follows: and a magnetron sputtering ion plating machine is used for sputtering a titanium tungsten layer film of 0.1-0.2um on the surface of ferrite, and then sputtering a low-cost conductive layer copper layer of 1-1.5um to replace the traditional gold layer, so that the performance and the qualification rate of the product are ensured, and the cost is reduced.
Further, the step S2 includes:
removing an oxide layer on the surface of the copper layer by using hydrochloric acid;
electroplating to thicken the copper layer;
and electroplating a gold layer on the copper layer.
The beneficial effects of adopting the further technical scheme are as follows: the oxidation layer is prevented from affecting the performance of the microstrip circuit, the stability and the reliability of the microstrip circuit are improved, the product performance and the qualification rate are ensured, and the cost is reduced.
Further, the step of electroplating the thickened copper layer is to electroplate the thickened copper layer to 3-4um, and the step of electroplating the gold layer on the copper layer is to electroplate the gold layer on the copper layer to 3-4um.
The beneficial effects of adopting the further technical scheme are as follows: ensuring the product performance and qualification rate and reducing the cost.
Further, the step S3 includes:
preparing a circuit pattern by using a spin coater, a hot plate, an exposure machine and a developing machine;
and (5) after wet etching, obtaining the microstrip circuit.
The beneficial effects of adopting the further technical scheme are as follows: ensuring the product performance and qualification rate and reducing the cost.
Further, after the step S1, before the step S2, the method includes:
adopting a step cooling and nitrogen filling process to cool to room temperature;
and (5) performing film adhesion detection and film thickness detection.
The beneficial effects of adopting the further technical scheme are as follows: ensuring the product performance and qualification rate and reducing the cost.
In addition, the invention also provides a microstrip ring spacer, which comprises a microstrip circuit prepared by the microstrip circuit preparation method, and further comprises the following steps: the magnetic iron comprises a metal carrier sheet, ferrite, a medium sheet and magnetic steel, wherein the ferrite is arranged on the metal carrier sheet, the medium sheet is arranged in the middle of the ferrite, the magnetic steel is arranged on the medium sheet, and the microstrip circuit is arranged on the ferrite.
The technical scheme of the invention has the beneficial effects that: and preparing a seed layer film by using magnetron sputtering, then sputtering a low-cost conductive layer to replace a traditional gold layer, preparing an outermost gold layer by using an electroplating process, and finally preparing a microstrip circuit pattern by using a photoetching process. The method for preparing the copper layer by using the magnetron sputtering method replaces the process of sputtering gold on the surface of ferrite by optimizing the microstrip circuit film system and the plating process flow, solves the problem of high cost of sputtering gold targets in the mass production process, and reduces the cost.
Additional aspects of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
Fig. 1 is a schematic flowchart of a microstrip circuit preparation method according to an embodiment of the present invention.
Fig. 2 is a second schematic flow chart of a microstrip circuit preparation method according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a microstrip spacer according to an embodiment of the present invention.
Reference numerals illustrate: 1. a metal carrier sheet; 2. a ferrite; 3. a media sheet; 4. magnetic steel; 5. a microstrip circuit.
Detailed Description
The principles and features of the present invention are described below with reference to the drawings, the examples are illustrated for the purpose of illustrating the invention and are not to be construed as limiting the scope of the invention.
As shown in fig. 1, an embodiment of the present invention provides a microstrip circuit preparation method, including:
s1, preparing a titanium tungsten layer and a copper layer on ferrite through magnetron sputtering;
s2, electroplating to thicken the copper layer, and preparing a bond alloy layer;
and S3, preparing a pattern through a photoetching process to obtain the microstrip circuit.
The technical scheme of the invention has the beneficial effects that: and preparing a seed layer film by using magnetron sputtering, then sputtering a low-cost conductive layer to replace a traditional gold layer, preparing an outermost gold layer by using an electroplating process, and finally preparing a microstrip circuit pattern by using a photoetching process. The method for preparing the copper layer by using the magnetron sputtering method replaces the process of sputtering gold on the surface of ferrite by optimizing the microstrip circuit film system and the plating process flow, solves the problem of high cost of sputtering gold targets in the mass production process, and reduces the cost.
As shown in fig. 2, a schematic flow of the preparation method of the microstrip circuit is shown in fig. 2, and the ferrite substrate (i.e. ferrite), cleaning, sputtering, electroplating and photoetching are performed to finally form the microstrip circuit.
The preparation method of the microstrip circuit provided by the invention can be a method for preparing a microstrip circuit film layer with low cost, and well solves the problem of high cost caused by the fact that a large number of gold targets are required to be used in magnetron sputtering in the production of a microstrip ring spacer circuit.
The technical scheme of the invention is that after the ion source is cleaned, a seed layer film is prepared by using magnetron sputtering, then a low-cost conductive layer is sputtered to replace a traditional gold layer, then an oxide layer of the conductive layer is removed by using a wet process, and an outermost gold layer is prepared by using an electroplating process. And finally, preparing the microstrip circuit pattern by using a photoetching process.
1. Cleaning
And cleaning and removing dust and organic matters on the surface of the microstrip by using a gas ion source before plating.
2. And preparing a seed layer film and a low-cost conductive layer by magnetron sputtering.
And sputtering a titanium tungsten layer film of 0.1-0.2um on the surface of the annular isolation microstrip piece by using a magnetron sputtering ion plating machine, and then sputtering a low-cost conductive layer copper layer of 1-1.5um to replace the traditional gold layer.
3. Electroplating to thicken the low-cost conductive layer, and then preparing the bond alloy layer.
And removing an oxide layer on the surface of the copper layer by using dilute hydrochloric acid, electroplating to thicken the copper layer to 3-4um, and finally electroplating a gold layer above the copper layer to 3-4um.
4. Patterning was performed using a photolithography process.
And preparing a circuit pattern on the electroplating film layer by using a spin coater, a hot plate, an exposure machine and a developing machine, and performing wet etching to obtain the microstrip circuit.
The method for preparing the copper layer by using the magnetron sputtering method in the low-cost manufacturing method (microstrip circuit preparation method) of the surface circuit provided by the invention replaces the process of sputtering gold on the surface of the ferrite substrate, and optimizes the microstrip circuit film system and the coating process flow. Solves the problem of high cost of sputtering gold targets in the mass production process. The ferrite spacer prepared by the method has the advantages of reducing the cost by more than 50 percent and achieving the coating qualification rate of more than 99 percent.
Further, the step S1 includes: the ferrite is cleaned by a gas ion source.
The beneficial effects of adopting the further technical scheme are as follows: before plating, gas ion source is used for cleaning and removing dust and organic matters on the surface of ferrite, so that the dust and the organic matters on the surface of ferrite are prevented from affecting the performance of the microstrip circuit, and the stability and the reliability of the microstrip circuit are improved.
Further, the gas ion source is the gas ion source of the ion plating machine, and the cleaning time is 10min.
The beneficial effects of adopting the further technical scheme are as follows: the cleanliness of ferrite is improved, and the stability and reliability of the microstrip circuit are improved.
Further, the thickness of the titanium tungsten layer prepared by magnetron sputtering ranges from 0.1 to 0.2um, and the thickness of the copper layer prepared by magnetron sputtering ranges from 1 to 1.5um.
The beneficial effects of adopting the further technical scheme are as follows: and a magnetron sputtering ion plating machine is used for sputtering a titanium tungsten layer film of 0.1-0.2um on the surface of ferrite, and then sputtering a low-cost conductive layer copper layer of 1-1.5um to replace the traditional gold layer, so that the performance and the qualification rate of the product are ensured, and the cost is reduced.
Further, the step S2 includes:
removing an oxide layer on the surface of the copper layer by using hydrochloric acid;
electroplating to thicken the copper layer;
and electroplating a gold layer on the copper layer.
The beneficial effects of adopting the further technical scheme are as follows: the oxidation layer is prevented from affecting the performance of the microstrip circuit, the stability and the reliability of the microstrip circuit are improved, the product performance and the qualification rate are ensured, and the cost is reduced.
Further, the step of electroplating the thickened copper layer is to electroplate the thickened copper layer to 3-4um, and the step of electroplating the gold layer on the copper layer is to electroplate the gold layer on the copper layer to 3-4um.
The beneficial effects of adopting the further technical scheme are as follows: ensuring the product performance and qualification rate and reducing the cost.
Further, the step S3 includes:
preparing a circuit pattern by using a spin coater, a hot plate, an exposure machine and a developing machine;
and (5) after wet etching, obtaining the microstrip circuit.
The beneficial effects of adopting the further technical scheme are as follows: ensuring the product performance and qualification rate and reducing the cost.
Further, after the step S1, before the step S2, the method includes:
adopting a step cooling and nitrogen filling process to cool to room temperature;
and (5) performing film adhesion detection and film thickness detection.
The beneficial effects of adopting the further technical scheme are as follows: ensuring the product performance and qualification rate and reducing the cost.
According to the embodiment of the invention, the noble metal gold layer prepared by magnetron sputtering in the common annular spacer is replaced by the low-cost metal copper layer, so that the subsequent process is optimized, and the product performance and the qualification rate are ensured.
Firstly, a GIS (GAS insulated SWITCHGEAR, gas insulated fully-closed combined electrical apparatus) gas ion source in an ion plating machine is used for cleaning a rotating frame, a workpiece and ferrite, a power supply is used for setting 150w, the grounding is opened, and the cleaning time is 10min.
Then preparing a titanium tungsten layer film by using an ion plating machine, loading the film into a plating workpiece disc, and rotating the workpiece disc to check whether the workpiece disc rotates freely; and then placing the workpiece disc into a sample injection chamber, and pre-vacuumizing. Ferrite may be provided on the workdisc.
And when the vacuum of the sample injection chamber is lower than 0.2Pa, feeding the workpiece disc into the main chamber. Opening a high vacuum valve (the pre-vacuum time of the cryopump is more than 180 minutes at the moment) to pump high vacuum; when the vacuum degree of the system reaches 5 multiplied by 10 -4 And when Pa, a workpiece disc rotating power switch is turned on, the workpiece rotates, and a heating switch is turned on to heat the vacuum chamber, wherein a step heating process is adopted for heating.
Before coating, cleaning the rotating frame and the workpiece by using a GIS gas ion source, setting 150w by using a power supply, opening the ground, and cleaning for 10min. And (5) cleaning and then preparing the titanium tungsten film layer. Sputtering titanium tungsten layer film 0.1-0.2um, and then sputtering low-cost conductive layer copper layer 1-1.5um.
After coating, cooling to room temperature by adopting a process of cooling step by step and filling nitrogen. And discharging the accompanying sheet to detect the film adhesion and the film thickness.
And removing an oxide layer on the surface of the copper layer by using dilute hydrochloric acid, electroplating to thicken the copper layer to 3-4um, and finally electroplating a gold layer above the copper layer to 3-4um.
Finally, after cleaning, a spin coater, a hot plate, an exposure machine and a developing machine are used for preparing a circuit pattern on the sputtered film layer, and after wet etching, a microstrip circuit pattern is formed.
As shown in fig. 3, the present invention further provides a microstrip spacer, which includes a microstrip circuit 6 prepared by the microstrip circuit preparation method described in any one of the above, and further includes: the magnetic iron comprises a metal carrier sheet 1, ferrite 2, a dielectric sheet 3 and magnetic steel 4, wherein the ferrite 2 is arranged on the metal carrier sheet 1, the dielectric sheet 3 is arranged in the middle of the ferrite 2, the magnetic steel 4 is arranged on the dielectric sheet 3, and a microstrip circuit 6 is arranged on the ferrite 2.
The technical scheme of the invention has the beneficial effects that: and preparing a seed layer film by using magnetron sputtering, then sputtering a low-cost conductive layer to replace a traditional gold layer, preparing an outermost gold layer by using an electroplating process, and finally preparing a microstrip circuit pattern by using a photoetching process. The method for preparing the copper layer by using the magnetron sputtering method replaces the process of sputtering gold on the surface of ferrite by optimizing the microstrip circuit film system and the plating process flow, solves the problem of high cost of sputtering gold targets in the mass production process, and reduces the cost.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (9)
1. A method of manufacturing a microstrip circuit, comprising:
s1, preparing a titanium tungsten layer and a copper layer on ferrite through magnetron sputtering;
s2, electroplating to thicken the copper layer, and preparing a bond alloy layer;
and S3, preparing a pattern through a photoetching process to obtain the microstrip circuit.
2. The method of manufacturing a microstrip circuit according to claim 1, wherein step S1 is preceded by: the ferrite is cleaned by a gas ion source.
3. The method of claim 2, wherein the gas ion source is a gas ion source of an ion plating machine, and the cleaning time is 10min.
4. The method of manufacturing a microstrip circuit according to claim 1, wherein the thickness of the titanium tungsten layer is in the range of 0.1 to 0.2um, and the thickness of the copper layer is in the range of 1 to 1.5um.
5. The method of manufacturing a microstrip circuit according to claim 1, wherein step S2 comprises:
removing an oxide layer on the surface of the copper layer by using hydrochloric acid;
electroplating to thicken the copper layer;
and electroplating a gold layer on the copper layer.
6. The method of claim 5, wherein the step of electroplating the thickened copper layer is electroplating the thickened copper layer to 3-4um, and the step of electroplating the gold layer on the copper layer is electroplating the gold layer on the copper layer to 3-4um.
7. The method of manufacturing a microstrip circuit according to claim 1, wherein step S3 comprises:
preparing a circuit pattern by using a spin coater, a hot plate, an exposure machine and a developing machine;
and (5) after wet etching, obtaining the microstrip circuit.
8. The method of manufacturing a microstrip circuit according to claim 1, wherein after step S1, before step S2, the method further comprises:
adopting a step cooling and nitrogen filling process to cool to room temperature;
and (5) performing film adhesion detection and film thickness detection.
9. Microstrip ring separator, characterized in that it comprises a microstrip circuit prepared by a microstrip circuit preparation method according to any of the preceding claims 1 to 8, further comprising: the magnetic iron comprises a metal carrier sheet, ferrite, a medium sheet and magnetic steel, wherein the ferrite is arranged on the metal carrier sheet, the medium sheet is arranged in the middle of the ferrite, the magnetic steel is arranged on the medium sheet, and the microstrip circuit is arranged on the ferrite.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211608571.4A CN116093573A (en) | 2022-12-14 | 2022-12-14 | Microstrip circuit preparation method and microstrip ring spacer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211608571.4A CN116093573A (en) | 2022-12-14 | 2022-12-14 | Microstrip circuit preparation method and microstrip ring spacer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116093573A true CN116093573A (en) | 2023-05-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211608571.4A Pending CN116093573A (en) | 2022-12-14 | 2022-12-14 | Microstrip circuit preparation method and microstrip ring spacer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116093573A (en) |
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2022
- 2022-12-14 CN CN202211608571.4A patent/CN116093573A/en active Pending
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