CN220526685U - High-frequency high-power resistor based on CVD diamond - Google Patents
High-frequency high-power resistor based on CVD diamond Download PDFInfo
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- CN220526685U CN220526685U CN202321336351.0U CN202321336351U CN220526685U CN 220526685 U CN220526685 U CN 220526685U CN 202321336351 U CN202321336351 U CN 202321336351U CN 220526685 U CN220526685 U CN 220526685U
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- diamond
- film layer
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 49
- 239000010432 diamond Substances 0.000 title claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000012528 membrane Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 10
- 230000017525 heat dissipation Effects 0.000 abstract description 3
- 238000009434 installation Methods 0.000 abstract description 3
- 238000010923 batch production Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 50
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000003292 glue Substances 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
The utility model relates to the technical field of resistors, and discloses a high-frequency high-power resistor based on CVD diamond, which comprises a diamond substrate, wherein a resistor layer is arranged on the diamond substrate, a resistor film layer is arranged on the surface of the resistor layer, the resistor film layer is arranged in the middle of the diamond substrate, the resistor film layer is made of a TaN film, an electrode layer is arranged on the resistor layer, the electrode layer comprises a surface electrode, a side electrode and a back electrode, and an electrode film layer is arranged on the electrode layer. The utility model has the advantages of good heat dissipation, large power capacity, 200W power, small size, high precision, good consistency, high application frequency and good high-frequency characteristic (DC-14G, VSWR < 1.5), is a surface-mounted element, is convenient for installation, has simple process flow and is convenient for batch production.
Description
Technical Field
The utility model relates to the technical field of resistors, in particular to a high-frequency high-power resistor based on CVD diamond.
Background
The high-frequency power resistor is taken as an important basic electronic element, is widely applied to wireless electronic devices and systems in the fields of communication, radar signal transmitters, aviation, aerospace and the like, and plays roles of system impedance matching and power load. When the wireless system works normally, the ports of the circulator, the coupler and the mixed line are not powered, but when the system has faults such as mismatch, microwave power appears at the ports, and the microwave power is consumed in a high-frequency power resistor in a heating mode, so that other important elements or components at the back end are prevented from being burnt.
The development of wireless technology continuously requires components to have higher operating frequency, higher power, higher operating temperature and smaller size, and the performance requirements on resistors are also higher and higher.
At present, aluminum nitride and beryllium oxide are mainly used as matrix materials of the miniaturized chip type high-power high-frequency resistor, the thermal conductivities of the aluminum nitride and the beryllium oxide are 180W/m.K and 300W/m.K respectively, and the thermal conductivities can not meet the application requirements of the electronic element field on the resistors with smaller size, higher power and higher frequency.
The manufacturing process on aluminum nitride and beryllium oxide is mainly manufactured by using a thick film screen printing process, and the current application frequency of the power resistor cannot be higher because the high-frequency power resistor manufactured by the thick film technology has skin effect influence.
Disclosure of Invention
The present utility model is intended to provide a CVD diamond based high frequency high power resistor to solve the problems set forth in the background art above.
In order to achieve the above purpose, the present utility model provides the following technical solutions:
the utility model provides a high-frequency high-power resistor based on CVD diamond, includes the diamond base plate, is equipped with the resistive layer on the diamond base plate, and the resistive layer surface is equipped with the resistive film layer, and the resistive film layer is in the middle of diamond base plate, and the resistive film layer adopts the TaN membrane to make, is equipped with the electrode layer on the resistive layer, and the electrode layer includes surface electrode, side electrode and back electrode, is equipped with the electrode layer on the electrode layer.
Preferably, the resistive layer is located on the polished face of the diamond substrate.
Preferably, the surface electrode is located on top of the resistive layer, the side electrode is located on the side of the diamond substrate, and the back electrode is located on the non-polished side of the diamond substrate.
Preferably, two surface electrodes are arranged on the left side and the right side of the resistance layer respectively, and the left surface electrode and the right surface electrode are respectively a left side grounding end and a right side grounding end.
Preferably, the electrode film layer is attached to the resistor film layer, and the electrode film layer structure is composed of TiW-Au.
Working principle: the utility model provides a high-frequency high-power resistor based on CVD diamond, wherein a diamond substrate is polished on one side, the roughness requirement of a polished surface is less than or equal to 0.03 mu m, the roughness requirement of a non-polished surface is less than or equal to 2 mu m, the thickness is 0.38 mu m plus or minus 0.05 mu m, a resistance layer is prepared on the polished surface by adopting a sputtering process, the resistance layer is mainly prepared in the middle of the diamond substrate, the heat generated during working is ensured to be downwards and uniformly transmitted to a radiator, the special structure of an input end electrode enables the resistor to realize impedance matching with a micro-strip system on the upper stage, and a back electrode fully covers the back surface of the diamond as a grounding end for product installation welding.
Compared with the prior art, the utility model has the following beneficial effects:
1. good heat dissipation, large power capacity and 200W of power.
2. Small size, high precision and good consistency.
3. High frequency of application and good high frequency characteristics (DC-14G, VSWR < 1.5)
4. Is a surface-mounted element and is convenient to install.
5. The process flow is simple and is convenient for mass production.
Drawings
FIG. 1 is a schematic diagram of a high-frequency high-power resistor based on CVD diamond according to an embodiment of the present utility model;
FIG. 2 is a top view of a CVD diamond based high frequency high power resistor according to an embodiment of the present utility model;
FIG. 3 is a front view of a high frequency high power resistor based on CVD diamond according to an embodiment of the present utility model
Reference numerals in the drawings of the specification include: 1. a diamond substrate; 2. a resistive layer; 3. an electrode layer; 31. a surface electrode; 32. a side electrode; 33. and a back electrode.
Detailed Description
The utility model is described in further detail below with reference to the attached drawings and embodiments:
as shown in figures 1-3 of the drawings,
the specific implementation process is as follows: the utility model provides a high-frequency high-power resistor based on CVD diamond, including diamond substrate 1, be equipped with resistive layer 2 on the diamond substrate 1, resistive layer 2 is located diamond substrate 1's polished surface, resistive layer 2 surface is equipped with resistive film layer, resistive film layer is in diamond substrate 1's centre, in order to guarantee the even heat dissipation of resistor, resistive film layer adopts the TaN membrane to make, adopt magnetron sputtering technology to accomplish the preparation, be equipped with electrode layer 3 on the resistive layer 2, electrode layer 3 includes surface electrode 31, side electrode 32 and back electrode 33, be equipped with the electrode film layer on the electrode layer 3, electrode film layer adheres to on resistive film layer, electrode film layer structure is TiW-Au constitution, electrode film layer one end is irregular structure, be the matching electrode of resistor and microstrip line impedance match, the other end is connected with the full metal face ground in the back through the side metal, surface electrode 31 is located resistive layer 2's top, surface electrode 31 is equipped with two, two surface electrode 31 are located resistive layer 2 left and right sides respectively, be left side ground terminal and right side ground terminal respectively, side electrode 32 is located diamond substrate 1's side, back electrode 33 is located diamond substrate's non-polished surface.
The specific embodiment is as follows:
the diamond substrate 1 is polished on one side, the roughness requirement of the polished surface is less than or equal to 0.03 mu m, the roughness requirement of the non-polished surface is less than or equal to 2 mu m, the thickness is 0.38 mu m plus or minus 0.05 mu m, the resistance layer 2 is prepared on the polished surface by adopting a sputtering process, the resistance layer 2 is mainly prepared in the middle of the diamond substrate 1, the heat generated during working is ensured to be downwards and uniformly transmitted to a radiator, the special structure of an input end electrode enables the resistor and the upper-stage microstrip system to realize impedance matching, and the back electrode 33 fully covers the back surface of the diamond as a grounding end for product installation welding.
Specifically:
laser scribing: before the diamond is metallized, laser scribing is carried out according to the size of the outline dimension of the product and the part to be metallized on the side face;
laser drilling: using a laser drilling process to finish the processing of photoetching alignment through holes and metallized through holes on the surface of the diamond;
cleaning and sputtering: and cleaning the diamond substrate 1 with the marked lines and the marked holes for a plurality of times by using strong acid before sputtering to remove surface impurities and improve the adhesive force and the surface quality of a sputtered metal layer. Sputtering a metal layer by using magnetron sputtering, firstly sputtering a TaN resistance layer 2 with a certain sheet resistance according to the target resistance value of a resistor, and then sputtering TiW and Au on the resistance layer 2 to form an electrode layer 3;
photoetching: the method comprises the steps of manufacturing a functional layer graph by wet etching, performing glue spraying and exposure development twice in the etching process, spraying 7um thick photoresist on the front face of the sputtered metal layer by using a glue spraying machine, firstly exposing and developing to etch a gold layer and a titanium tungsten layer on the front face, then spraying glue, exposing and developing to etch a nitriding layer, and protecting the metal layer on the back face and the metal layer on the inner wall of a through hole by needing glue spraying and glue pasting on the back face before etching twice because the back face of the diamond substrate 1 is provided with a groove line and the side wall of the through hole, so that damage to a non-etching area by solution in the etching process is avoided;
and (3) heat treatment: according to the sputtered TaN square resistance and the actual resistance tested after photoetching, a high-temperature oven at 400 ℃ is used for constant-temperature heat treatment for 10-30 min, and the purpose of the heat treatment is to improve the resistance of the resistor to the target resistance and the stability of the resistor.
Splitting: and mechanically fracturing the diamond according to the grooved line.
The foregoing is merely exemplary of the present utility model, and specific technical solutions and/or features that are well known in the art have not been described in detail herein. It should be noted that, for those skilled in the art, several variations and modifications can be made without departing from the technical solution of the present utility model, and these should also be regarded as the protection scope of the present utility model, which does not affect the effect of the implementation of the present utility model and the practical applicability of the patent. The protection scope of the present application shall be subject to the content of the claims, and the description of the specific embodiments and the like in the specification can be used for explaining the content of the claims.
Claims (5)
1. A CVD diamond based high frequency high power resistor characterized by: including diamond base plate (1), be equipped with resistive layer (2) on diamond base plate (1), resistive layer (2) surface is equipped with resistive film layer, resistive film layer is in the middle of diamond base plate (1), resistive film layer adopts the TaN membrane to make, be equipped with electrode layer (3) on resistive layer (2), electrode layer (3) are including table electrode (31), side electrode (32) and back electrode (33), be equipped with the electrode layer on electrode layer (3).
2. A CVD diamond based high frequency high power resistor according to claim 1, wherein: the resistor layer (2) is positioned on the polished surface of the diamond substrate (1).
3. A CVD diamond based high frequency high power resistor according to claim 1, wherein: the surface electrode (31) is positioned on the top of the resistor layer (2), the side electrode (32) is positioned on the side surface of the diamond substrate (1), and the back electrode (33) is positioned on the non-polished surface of the diamond substrate (1).
4. A CVD diamond based high frequency high power resistor according to claim 3, wherein: the two surface electrodes (31) are arranged, the two surface electrodes (31) are respectively positioned at the left side and the right side of the resistor layer (2), and are respectively a left side grounding end and a right side grounding end.
5. A CVD diamond based high frequency high power resistor according to claim 1, wherein: the electrode film layer is attached to the resistor film layer, and the electrode film layer structure is composed of TiW-Au.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321336351.0U CN220526685U (en) | 2023-05-30 | 2023-05-30 | High-frequency high-power resistor based on CVD diamond |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321336351.0U CN220526685U (en) | 2023-05-30 | 2023-05-30 | High-frequency high-power resistor based on CVD diamond |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220526685U true CN220526685U (en) | 2024-02-23 |
Family
ID=89925661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321336351.0U Active CN220526685U (en) | 2023-05-30 | 2023-05-30 | High-frequency high-power resistor based on CVD diamond |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220526685U (en) |
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2023
- 2023-05-30 CN CN202321336351.0U patent/CN220526685U/en active Active
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