CN116134625B - 压力传感器构造、压力传感器装置及压力传感器构造的制造方法 - Google Patents

压力传感器构造、压力传感器装置及压力传感器构造的制造方法

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Publication number
CN116134625B
CN116134625B CN202180059986.8A CN202180059986A CN116134625B CN 116134625 B CN116134625 B CN 116134625B CN 202180059986 A CN202180059986 A CN 202180059986A CN 116134625 B CN116134625 B CN 116134625B
Authority
CN
China
Prior art keywords
protective
layer
pressure sensor
electrode
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202180059986.8A
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English (en)
Chinese (zh)
Other versions
CN116134625A (zh
Inventor
岸杭薫
吉田康一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of CN116134625A publication Critical patent/CN116134625A/zh
Application granted granted Critical
Publication of CN116134625B publication Critical patent/CN116134625B/zh
Active legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
    • B81B7/0029—Protection against environmental influences not provided for in groups B81B7/0012 - B81B7/0025
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
    • B81B7/0048—Packages or encapsulation for reducing stress inside of the package structure between the MEMS die and the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0058—Packages or encapsulation for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0064—Packages or encapsulation for protecting against electromagnetic or electrostatic interferences
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00333—Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
    • G01L19/0627—Protection against aggressive medium in general
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
    • G01L19/069—Protection against electromagnetic or electrostatic interferences
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
CN202180059986.8A 2020-07-21 2021-07-12 压力传感器构造、压力传感器装置及压力传感器构造的制造方法 Active CN116134625B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020124567 2020-07-21
JP2020-124567 2020-07-21
PCT/JP2021/026151 WO2022019167A1 (ja) 2020-07-21 2021-07-12 圧力センサ構造、圧力センサ装置および圧力センサ構造の製造方法

Publications (2)

Publication Number Publication Date
CN116134625A CN116134625A (zh) 2023-05-16
CN116134625B true CN116134625B (zh) 2026-03-06

Family

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Family Applications (1)

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CN202180059986.8A Active CN116134625B (zh) 2020-07-21 2021-07-12 压力传感器构造、压力传感器装置及压力传感器构造的制造方法

Country Status (4)

Country Link
US (1) US12345593B2 (https=)
JP (1) JP7485045B2 (https=)
CN (1) CN116134625B (https=)
WO (1) WO2022019167A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117836598A (zh) * 2021-08-31 2024-04-05 株式会社村田制作所 压力传感器元件及压力传感器
CN118056117A (zh) * 2021-10-05 2024-05-17 株式会社村田制作所 压力传感器构造和压力传感器装置
CN117129119A (zh) * 2023-10-26 2023-11-28 西安中星测控有限公司 一种基于玻璃熔合技术的mcs压力传感器及其制做方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6056244U (ja) * 1983-09-26 1985-04-19 住友電気工業株式会社 半導体圧力センサ
JP2010139495A (ja) * 2008-11-13 2010-06-24 Denso Corp 半導体装置およびその製造方法
CN105917205A (zh) * 2014-01-17 2016-08-31 株式会社村田制作所 改进的压力传感器结构
CN106716095A (zh) * 2014-09-19 2017-05-24 株式会社村田制作所 压力传感器模块
CN107110634A (zh) * 2014-10-22 2017-08-29 阪东化学株式会社 静电电容型传感器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6432U (https=) * 1987-06-19 1989-01-05
JPH0749278A (ja) * 1993-08-05 1995-02-21 Omron Corp 圧力センサ
SE506558C2 (sv) * 1994-04-14 1998-01-12 Cecap Ab Givarelement för tryckgivare
FI112644B (fi) * 2000-11-10 2003-12-31 Vaisala Oyj Pintamikromekaaninen absoluuttipaineanturi ja menetelmä sen valmistamiseksi
JP2005077134A (ja) * 2003-08-28 2005-03-24 Kyocera Corp 圧力検出装置用パッケージ
JP3930862B2 (ja) * 2004-02-13 2007-06-13 東京エレクトロン株式会社 容量型センサ
DE102004011144B4 (de) * 2004-03-08 2013-07-04 Infineon Technologies Ag Drucksensor und Verfahren zum Betreiben eines Drucksensors
US8569092B2 (en) 2009-12-28 2013-10-29 General Electric Company Method for fabricating a microelectromechanical sensor with a piezoresistive type readout
TWI439413B (zh) * 2011-03-30 2014-06-01 Pixart Imaging Inc 微機電感測裝置及其製作方法
WO2014085611A1 (en) * 2012-11-30 2014-06-05 Robert Bosch Gmbh Mems pressure sensor assembly with electromagnetic shield
JP2015059831A (ja) * 2013-09-19 2015-03-30 株式会社デンソー 電子装置
JP6476869B2 (ja) * 2015-01-06 2019-03-06 セイコーエプソン株式会社 電子デバイス、電子機器および移動体
JP6786469B2 (ja) * 2017-11-30 2020-11-18 株式会社鷺宮製作所 圧力センサのシールド構造、および、それを備える圧力センサ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6056244U (ja) * 1983-09-26 1985-04-19 住友電気工業株式会社 半導体圧力センサ
JP2010139495A (ja) * 2008-11-13 2010-06-24 Denso Corp 半導体装置およびその製造方法
CN105917205A (zh) * 2014-01-17 2016-08-31 株式会社村田制作所 改进的压力传感器结构
CN106716095A (zh) * 2014-09-19 2017-05-24 株式会社村田制作所 压力传感器模块
CN107110634A (zh) * 2014-10-22 2017-08-29 阪东化学株式会社 静电电容型传感器

Also Published As

Publication number Publication date
US12345593B2 (en) 2025-07-01
CN116134625A (zh) 2023-05-16
JP7485045B2 (ja) 2024-05-16
WO2022019167A1 (ja) 2022-01-27
US20230146158A1 (en) 2023-05-11
JPWO2022019167A1 (https=) 2022-01-27

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